JP2007324494A - 高周波回路コンポーネント - Google Patents
高周波回路コンポーネント Download PDFInfo
- Publication number
- JP2007324494A JP2007324494A JP2006155497A JP2006155497A JP2007324494A JP 2007324494 A JP2007324494 A JP 2007324494A JP 2006155497 A JP2006155497 A JP 2006155497A JP 2006155497 A JP2006155497 A JP 2006155497A JP 2007324494 A JP2007324494 A JP 2007324494A
- Authority
- JP
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- Prior art keywords
- frequency circuit
- substrate
- mounting plate
- circuit component
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 238000007667 floating Methods 0.000 claims abstract description 12
- 239000003990 capacitor Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 19
- 239000010408 film Substances 0.000 description 97
- 239000010410 layer Substances 0.000 description 46
- 229910052581 Si3N4 Inorganic materials 0.000 description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 22
- 229910052782 aluminium Inorganic materials 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0003—MEMS mechanisms for assembling automatically hinged components, self-assembly devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/06—Mounting, supporting or suspending transformers, reactors or choke coils not being of the signal type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
- H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
- H05K1/147—Structural association of two or more printed circuits at least one of the printed circuits being bent or folded, e.g. by using a flexible printed circuit
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/014—Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/165—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed inductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4688—Composite multilayer circuits, i.e. comprising insulating layers having different properties
- H05K3/4691—Rigid-flexible multilayer circuits comprising rigid and flexible layers, e.g. having in the bending regions only flexible layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Coils Or Transformers For Communication (AREA)
Abstract
【解決手段】導電性を有する基板1と、高周波回路素子としてのコイル2と、誘電体からなる薄膜で構成されコイル2を搭載した搭載板3と、基板1と搭載板3との間を機械的に接続して搭載板3を基板1から浮いた状態に支持する支持板4と、を備える。
【選択図】図1
Description
2,93,94 コイル
3,43 搭載板
4 支持板
31 コンデンサ
42,91,92 メカニカルスイッチ
95 可変コンデンサ
Claims (8)
- 基板と、1つ以上の高周波回路素子と、誘電体からなる薄膜で構成され前記1つ以上の高周波回路素子を搭載した搭載板と、前記基板と前記搭載板との間を機械的に接続して前記搭載板を前記基板から浮いた状態に支持する支持部と、を備えたことを特徴とする高周波回路コンポーネント。
- 前記基板が導電性を有することを特徴とする請求項1記載の高周波回路コンポーネント。
- 前記1つ以上の高周波回路素子及び前記支持部が薄膜で構成されたことを特徴とする請求項1又は2記載の高周波回路コンポーネント。
- 前記搭載板の周縁部の全体又は一部に沿って段差が形成されたことを特徴とする請求項1乃至3のいずれかに記載の高周波回路コンポーネント。
- 前記1つ以上の高周波回路素子の数が2つ以上であり、前記1つ以上の高周波回路素子のうちの少なくとも2つの高周波回路素子の間が、前記搭載板上において電気的に接続されたことを特徴とする請求項1乃至4のいずれかに記載の高周波回路コンポーネント。
- 前記1つ以上の高周波回路素子のうちの少なくとも1つの高周波回路素子は、コイルであることを特徴とする請求項1乃至5のいずれかに記載の高周波回路コンポーネント。
- 前記1つ以上の高周波回路素子のうちの少なくとも1つの高周波回路素子は、固定又は可変のコンデンサであることを特徴とする請求項1乃至6のいずれかに記載の高周波回路コンポーネント。
- 前記1つ以上の高周波回路素子のうちの少なくとも1つの高周波回路素子は、メカニカルスイッチであることを特徴とする請求項1乃至7のいずれかに記載の高周波回路コンポーネント。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006155497A JP4893112B2 (ja) | 2006-06-03 | 2006-06-03 | 高周波回路コンポーネント |
PCT/JP2007/059860 WO2007141997A1 (ja) | 2006-06-03 | 2007-05-14 | 高周波回路コンポーネント |
US12/326,793 US7924574B2 (en) | 2006-06-03 | 2008-12-02 | High-frequency circuit components |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006155497A JP4893112B2 (ja) | 2006-06-03 | 2006-06-03 | 高周波回路コンポーネント |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007324494A true JP2007324494A (ja) | 2007-12-13 |
JP4893112B2 JP4893112B2 (ja) | 2012-03-07 |
Family
ID=38801262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006155497A Expired - Fee Related JP4893112B2 (ja) | 2006-06-03 | 2006-06-03 | 高周波回路コンポーネント |
Country Status (3)
Country | Link |
---|---|
US (1) | US7924574B2 (ja) |
JP (1) | JP4893112B2 (ja) |
WO (1) | WO2007141997A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2157480B1 (en) | 2003-04-09 | 2015-05-27 | Nikon Corporation | Exposure method and apparatus, and device manufacturing method |
TWI474132B (zh) | 2003-10-28 | 2015-02-21 | 尼康股份有限公司 | 照明光學裝置、投影曝光裝置、曝光方法以及元件製造方法 |
TWI519819B (zh) | 2003-11-20 | 2016-02-01 | 尼康股份有限公司 | 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法 |
TWI505329B (zh) | 2004-02-06 | 2015-10-21 | 尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法以及元件製造方法 |
EP2660854B1 (en) | 2005-05-12 | 2017-06-21 | Nikon Corporation | Projection optical system, exposure apparatus and exposure method |
US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
KR101546987B1 (ko) | 2007-10-16 | 2015-08-24 | 가부시키가이샤 니콘 | 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법 |
KR101562073B1 (ko) | 2007-10-16 | 2015-10-21 | 가부시키가이샤 니콘 | 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법 |
US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
WO2009145048A1 (ja) | 2008-05-28 | 2009-12-03 | 株式会社ニコン | 空間光変調器の検査装置および検査方法、照明光学系、照明光学系の調整方法、露光装置、およびデバイス製造方法 |
TW201340067A (zh) | 2012-01-06 | 2013-10-01 | Access Business Group Int Llc | 具感應次級線圈之印刷媒體 |
FR3061901B1 (fr) * | 2017-01-19 | 2021-07-30 | Tronics Microsystems | Structure d'au moins un element microfabrique et procede de montage associe |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08222694A (ja) * | 1995-02-13 | 1996-08-30 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP2000150251A (ja) * | 1998-09-12 | 2000-05-30 | Lucent Technol Inc | 受動自己組立てインダクタを有する物品 |
JP2001076935A (ja) * | 1999-07-16 | 2001-03-23 | Lucent Technol Inc | 可変インダクタを備える物品 |
JP2003503816A (ja) * | 1999-06-30 | 2003-01-28 | エムシーエヌシー | 高圧用マイクロ機械加工された静電スイッチ |
JP2003209027A (ja) * | 2001-10-31 | 2003-07-25 | Agilent Technol Inc | 微細加工バラクター |
JP2003218213A (ja) * | 2002-01-16 | 2003-07-31 | Ind Technol Res Inst | 三次元ソレノイドの製造方法および同方法によるデバイス |
JP2003245898A (ja) * | 2002-01-04 | 2003-09-02 | Samsung Electronics Co Ltd | ステップアップ構造を有する片持ちばり及びその製造方法 |
JP2004056133A (ja) * | 2002-07-22 | 2004-02-19 | Xerox Corp | グランドプレーン構造をもつ平面外マイクロコイル |
JP2004221285A (ja) * | 2003-01-14 | 2004-08-05 | Canon Inc | デバイス |
WO2005022575A1 (en) * | 2003-08-30 | 2005-03-10 | Qinetiq Limited | Micro electromechanical system switch. |
JP2005251549A (ja) * | 2004-03-04 | 2005-09-15 | Nikon Corp | マイクロスイッチ及びマイクロスイッチの駆動方法 |
JP2006346830A (ja) * | 2005-06-17 | 2006-12-28 | Toshiba Corp | マイクロメカニカルデバイス、マイクロスイッチ、容量可変キャパシタ、高周波回路及び光学スイッチ |
JP2007324495A (ja) * | 2006-06-03 | 2007-12-13 | Nikon Corp | 高周波回路用容量素子 |
JP2008159661A (ja) * | 2006-12-21 | 2008-07-10 | Nikon Corp | 可変キャパシタ、可変キャパシタ装置、高周波回路用フィルタ及び高周波回路 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US6067183A (en) * | 1998-12-09 | 2000-05-23 | Eastman Kodak Company | Light modulator with specific electrode configurations |
US7446261B2 (en) * | 2001-09-06 | 2008-11-04 | Finisar Corporation | Flexible circuit boards with tooling cutouts for optoelectronic modules |
AU2002354246A1 (en) | 2002-01-09 | 2003-07-30 | Nikon Corporation | Optical element, thin-film structural body, optical switch, and optical element manufacturing method |
US7177065B2 (en) * | 2002-01-09 | 2007-02-13 | Nikon Corporation | Optical element, thin film structure, optical switch, and method of manufacturing optical element |
US20040152276A1 (en) * | 2003-01-14 | 2004-08-05 | Naoki Nishimura | Device, and substrate on which circuit and antenna are formed |
JP2005057270A (ja) * | 2003-08-01 | 2005-03-03 | Stmicroelectronics Sa | 切換え可能なインダクタンス |
JP4037394B2 (ja) * | 2004-09-16 | 2008-01-23 | 株式会社東芝 | マイクロメカニカルデバイス |
-
2006
- 2006-06-03 JP JP2006155497A patent/JP4893112B2/ja not_active Expired - Fee Related
-
2007
- 2007-05-14 WO PCT/JP2007/059860 patent/WO2007141997A1/ja active Application Filing
-
2008
- 2008-12-02 US US12/326,793 patent/US7924574B2/en not_active Expired - Fee Related
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08222694A (ja) * | 1995-02-13 | 1996-08-30 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP2000150251A (ja) * | 1998-09-12 | 2000-05-30 | Lucent Technol Inc | 受動自己組立てインダクタを有する物品 |
JP2003503816A (ja) * | 1999-06-30 | 2003-01-28 | エムシーエヌシー | 高圧用マイクロ機械加工された静電スイッチ |
JP2001076935A (ja) * | 1999-07-16 | 2001-03-23 | Lucent Technol Inc | 可変インダクタを備える物品 |
JP2003209027A (ja) * | 2001-10-31 | 2003-07-25 | Agilent Technol Inc | 微細加工バラクター |
JP2003245898A (ja) * | 2002-01-04 | 2003-09-02 | Samsung Electronics Co Ltd | ステップアップ構造を有する片持ちばり及びその製造方法 |
JP2003218213A (ja) * | 2002-01-16 | 2003-07-31 | Ind Technol Res Inst | 三次元ソレノイドの製造方法および同方法によるデバイス |
JP2004056133A (ja) * | 2002-07-22 | 2004-02-19 | Xerox Corp | グランドプレーン構造をもつ平面外マイクロコイル |
JP2004221285A (ja) * | 2003-01-14 | 2004-08-05 | Canon Inc | デバイス |
WO2005022575A1 (en) * | 2003-08-30 | 2005-03-10 | Qinetiq Limited | Micro electromechanical system switch. |
JP2005251549A (ja) * | 2004-03-04 | 2005-09-15 | Nikon Corp | マイクロスイッチ及びマイクロスイッチの駆動方法 |
JP2006346830A (ja) * | 2005-06-17 | 2006-12-28 | Toshiba Corp | マイクロメカニカルデバイス、マイクロスイッチ、容量可変キャパシタ、高周波回路及び光学スイッチ |
JP2007324495A (ja) * | 2006-06-03 | 2007-12-13 | Nikon Corp | 高周波回路用容量素子 |
JP2008159661A (ja) * | 2006-12-21 | 2008-07-10 | Nikon Corp | 可変キャパシタ、可変キャパシタ装置、高周波回路用フィルタ及び高周波回路 |
Also Published As
Publication number | Publication date |
---|---|
WO2007141997A1 (ja) | 2007-12-13 |
JP4893112B2 (ja) | 2012-03-07 |
US20090084593A1 (en) | 2009-04-02 |
US7924574B2 (en) | 2011-04-12 |
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