JP2007318106A5 - - Google Patents
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- Publication number
- JP2007318106A5 JP2007318106A5 JP2007113979A JP2007113979A JP2007318106A5 JP 2007318106 A5 JP2007318106 A5 JP 2007318106A5 JP 2007113979 A JP2007113979 A JP 2007113979A JP 2007113979 A JP2007113979 A JP 2007113979A JP 2007318106 A5 JP2007318106 A5 JP 2007318106A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- opening
- element formation
- formation layer
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 230000015572 biosynthetic process Effects 0.000 claims 31
- 239000004065 semiconductor Substances 0.000 claims 30
- 239000000758 substrate Substances 0.000 claims 19
- 229910052721 tungsten Inorganic materials 0.000 claims 19
- 238000004519 manufacturing process Methods 0.000 claims 18
- 239000010937 tungsten Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 13
- 229910052750 molybdenum Inorganic materials 0.000 claims 13
- 239000011733 molybdenum Substances 0.000 claims 13
- 239000000203 mixture Substances 0.000 claims 10
- -1 tungsten nitride Chemical class 0.000 claims 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 5
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 3
- 229910052741 iridium Inorganic materials 0.000 claims 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052763 palladium Inorganic materials 0.000 claims 3
- 229910052703 rhodium Inorganic materials 0.000 claims 3
- 239000010948 rhodium Substances 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- 229910052725 zinc Inorganic materials 0.000 claims 3
- 239000011701 zinc Substances 0.000 claims 3
- 229910052726 zirconium Inorganic materials 0.000 claims 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- 239000006229 carbon black Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007113979A JP5227536B2 (ja) | 2006-04-28 | 2007-04-24 | 半導体集積回路の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006126329 | 2006-04-28 | ||
| JP2006126329 | 2006-04-28 | ||
| JP2007113979A JP5227536B2 (ja) | 2006-04-28 | 2007-04-24 | 半導体集積回路の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007318106A JP2007318106A (ja) | 2007-12-06 |
| JP2007318106A5 true JP2007318106A5 (https=) | 2010-04-02 |
| JP5227536B2 JP5227536B2 (ja) | 2013-07-03 |
Family
ID=38851654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007113979A Expired - Fee Related JP5227536B2 (ja) | 2006-04-28 | 2007-04-24 | 半導体集積回路の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5227536B2 (https=) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010041045A (ja) * | 2008-07-09 | 2010-02-18 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP2010027818A (ja) * | 2008-07-18 | 2010-02-04 | Semiconductor Energy Lab Co Ltd | 配線基板及びその作製方法、並びに、半導体装置及びその作製方法 |
| JP5216716B2 (ja) * | 2008-08-20 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| CN103700704B (zh) | 2008-11-07 | 2017-07-11 | 株式会社半导体能源研究所 | 半导体器件 |
| JP5583951B2 (ja) * | 2008-11-11 | 2014-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8054673B2 (en) * | 2009-04-16 | 2011-11-08 | Seagate Technology Llc | Three dimensionally stacked non volatile memory units |
| JP5581106B2 (ja) * | 2009-04-27 | 2014-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN102612714B (zh) * | 2009-11-13 | 2016-06-29 | 株式会社半导体能源研究所 | 半导体器件及其驱动方法 |
| WO2012002186A1 (en) * | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| FR2977069B1 (fr) * | 2011-06-23 | 2014-02-07 | Soitec Silicon On Insulator | Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire |
| JP2013161878A (ja) * | 2012-02-02 | 2013-08-19 | Renesas Electronics Corp | 半導体装置、および半導体装置の製造方法 |
| JP6452413B2 (ja) * | 2014-06-09 | 2019-01-16 | 日本放送協会 | 追記型固体メモリ |
| KR101855846B1 (ko) * | 2015-12-29 | 2018-05-09 | 포항공과대학교 산학협력단 | 수직적층구조의 3차원 정적램 코어 셀 및 그를 포함하는 정적램 코어 셀 어셈블리 |
| JP6916794B2 (ja) * | 2016-08-17 | 2021-08-11 | 株式会社半導体エネルギー研究所 | 表示装置 |
| KR102104981B1 (ko) | 2017-12-19 | 2020-05-29 | 엘지디스플레이 주식회사 | 표시 장치 |
| KR102185116B1 (ko) | 2017-12-19 | 2020-12-01 | 엘지디스플레이 주식회사 | 표시 장치 |
| WO2020211272A1 (en) | 2019-04-15 | 2020-10-22 | Yangtze Memory Technologies Co., Ltd. | Unified semiconductor devices having processor and heterogeneous memories and methods for forming the same |
| KR102824680B1 (ko) | 2019-04-15 | 2025-06-24 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 프로세서 및 동적 랜덤 액세스 메모리를 갖는 본디드 반도체 장치 및 이를 형성하는 방법 |
| CN110731012B (zh) | 2019-04-15 | 2021-01-29 | 长江存储科技有限责任公司 | 具有处理器和异构存储器的一体化半导体器件及其形成方法 |
| CN112510031B (zh) * | 2019-04-30 | 2024-10-25 | 长江存储科技有限责任公司 | 具有处理器和nand闪存的键合半导体器件及其形成方法 |
| KR20210114016A (ko) | 2019-04-30 | 2021-09-17 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 프로세서 및 낸드 플래시 메모리를 갖는 접합된 반도체 소자 및 이를 형성하는 방법 |
| KR102308784B1 (ko) * | 2020-02-28 | 2021-10-01 | 한양대학교 산학협력단 | 텔루륨 산화물 및 이를 채널층으로 구비하는 박막트랜지스터 |
| WO2022123387A1 (ja) * | 2020-12-11 | 2022-06-16 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器 |
| CN116613136A (zh) * | 2022-02-09 | 2023-08-18 | 群创光电股份有限公司 | 电子装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0661418A (ja) * | 1992-08-07 | 1994-03-04 | Sharp Corp | 積層型半導体集積回路 |
| JP3809733B2 (ja) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜トランジスタの剥離方法 |
| JP4137328B2 (ja) * | 1999-12-28 | 2008-08-20 | 光正 小柳 | ３次元半導体集積回路装置の製造方法 |
| JP4554152B2 (ja) * | 2002-12-19 | 2010-09-29 | 株式会社半導体エネルギー研究所 | 半導体チップの作製方法 |
| JP4408042B2 (ja) * | 2002-12-27 | 2010-02-03 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
-
2007
- 2007-04-24 JP JP2007113979A patent/JP5227536B2/ja not_active Expired - Fee Related
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