JP2007317936A - Method and device for washing, and computer-readable storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an immersion-type washing device which can obtain a satisfactory filter life, and to provide a washing method using it. <P>SOLUTION: The washing device for removing a resist film or the like formed in a wafer W has a washing bath 101 which stores a washing solution for performing peeling treatment for the resist film or the like and performs washing treatment for the wafer W immersed in the inside, a circulation line 104 with filters 114, 115 interposed which circulates washing solution inside the washing bath 101, and a rinse bath 121 as a removal treatment bath for carrying out removal treatment for removing the resist film or the like left in the wafer W after washing treatment in the washing bath 101 by a rinse solution as a removal liquid. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a cleaning apparatus and a cleaning method for performing a cleaning process such as delamination of resist and etching by immersing the object to be processed in a chemical tank in which a chemical liquid for cleaning is stored. The present invention relates to a computer-readable storage medium for execution.

  For example, in a semiconductor device manufacturing process, an element such as a transistor is formed by various processes, and a cleaning process for removing particles, organic contaminants, metal impurities, and the like attached to the surface at that time is indispensable. As such a cleaning process, a dipping type cleaning apparatus for storing a predetermined cleaning liquid in a cleaning tank and dipping a semiconductor wafer (hereinafter simply referred to as a wafer) therein is frequently used. In the cleaning device, the cleaning liquid is circulated through a filter (for example, Patent Document 1).

  On the other hand, in the resist stripping process, particularly the BEOL resist stripping process, the resist and the deposit generated in the etching process (hereinafter referred to as etching deposit) are stripped by the above-described immersion type cleaning apparatus by cleaning with an organic stripping solution. ing.

  When such a stripping process is performed with an immersion type cleaning apparatus, the resist stripped from the wafer is present in the organic stripping liquid in the cleaning tank, and therefore, when the organic stripping liquid that is the cleaning liquid is circulated, it exists in the circulation path. Filters tend to clog and have a short life. This is particularly remarkable in the non-ashing process in which the resist is removed without ashing. This is because the resist and the deposit residue hardened in the process such as dry etching are not easily dissolved, and the amount captured by the filter increases. When the exfoliated material is trapped in the filter in this way, the effective filtration area of the filter is reduced and the flow rate is reduced. Therefore, when the effective filtration area of the filter reaches a certain value, it is determined that the filter life is reached and the filter is replaced. .

  Since the filter is expensive, it has been studied to extend the filter life as much as possible. For example, Patent Document 2 discloses a technique for extending the filter life by back-cleaning the filter. In addition, increasing the filtration area of the filter and arranging the filters in series in two stages have been studied.

However, even if the above measures are taken, the peeled resist film and etching deposit are always trapped in the filter once, so the filter life cannot be extended sufficiently, and a fundamental solution is required. Yes.
Japanese Patent Laid-Open No. 2001-7074 International Publication No. 03/037477 pamphlet

  The present invention has been made in view of such circumstances, and is an immersion type cleaning apparatus capable of obtaining a sufficient filter life, a cleaning method using the same, and a computer read for executing such a cleaning method. An object is to provide a possible storage medium.

  In order to solve the above problems, according to a first aspect of the present invention, there is provided a cleaning apparatus for removing a substance formed on an object to be processed, wherein a cleaning liquid for performing a peeling process of the substance is stored and stored therein. A cleaning tank that immerses the object to be processed and performs a cleaning process, a circulation line through which a filter is interposed to circulate the cleaning liquid in the cleaning tank, and the object that has been cleaned in the cleaning tank remain in the object to be processed Provided is a cleaning apparatus comprising: a removal treatment tank that performs a removal treatment for removing a substance with a removal liquid; and a transfer device that conveys an object to be processed between the washing tank and the removal treatment tank. .

  According to a second aspect of the present invention, there is provided a cleaning apparatus for removing a substance formed on an object to be processed, wherein a cleaning liquid for performing a peeling process of the substance is stored, and the object to be processed is immersed therein. A cleaning tank for performing a cleaning process, a circulation line through which a filter is interposed to circulate the cleaning liquid in the cleaning tank, and a removal liquid that removes substances remaining in the target object that has been cleaned in the cleaning tank The removal treatment tank for performing the treatment, the transfer device for carrying the treatment object between the cleaning tank and the removal treatment tank, and the separation of the substance formed on the treatment object by the treatment in the washing tank proceeds. However, when the substance remains in a predetermined state remaining in the object to be processed, a control unit that issues a command to transfer the object to be processed from the cleaning tank to the removal processing tank to the transfer device. Provided is a cleaning apparatus.

  In the second aspect, the control unit stores in advance a time until the substance formed on the object to be processed is in the predetermined state, and when the time has elapsed, the transfer device Can be configured to issue the command. Further, the apparatus further includes a particle sensor that detects particles in the cleaning liquid, and the control unit receives the detection value of the particle sensor, and when the detection value becomes a value corresponding to the predetermined state, It can comprise so that the said instruction | command may be issued with respect to a conveying apparatus.

  Moreover, the said 1st or 2nd viewpoint WHEREIN: The said removal processing tank can have the function to perform the rinse process after washing | cleaning. Further, the removal treatment tank may have means for physically removing a substance formed on the object to be treated, and as such means for physically removing, the object to be treated in the cleaning tank. It may have a shower head for supplying a shower of the removal liquid to the tank, or it may have an ultrasonic vibrator that applies an ultrasonic wave to the removal liquid in a state where the removal liquid is stored in the removal treatment tank. There may be included stirring means for stirring the removal liquid in a state where the removal liquid is stored in the removal treatment tank. Further, the cleaning tank has an inner tank in which the cleaning liquid is stored and an outer tank that receives the cleaning liquid overflowed from the inner tank, and the circulation line supplies the cleaning liquid discharged from the outer tank to the inner tank. Can be used. Furthermore, pure water can be used as the removal liquid, and examples of the substance formed on the object to be processed include a resist film or a deposit generated in an etching process.

  According to a third aspect of the present invention, there is provided a cleaning method for removing a substance formed on an object to be processed, wherein a cleaning liquid for performing a peeling process of the substance is stored in a cleaning tank, and a circulation line in which a filter is interposed A process of immersing the object to be processed in the cleaning liquid in the cleaning tank while circulating the cleaning liquid, and a process of removing the object to be processed when the substance remains in the predetermined state. There is provided a cleaning method comprising a step of transporting to a tank and a step of removing a substance remaining in a target object in the removal processing tank with a removing liquid.

  According to a fourth aspect of the present invention, there is provided a cleaning method for removing a substance formed on an object to be processed, in which a cleaning liquid for performing a peeling process of the substance is stored in a cleaning tank, and a circulation line in which a filter is interposed The process of immersing the object to be processed in the cleaning liquid in the cleaning tank while circulating the cleaning liquid by the cleaning process, and the peeling of the substance formed on the target object by the process in the cleaning tank are in progress. A step of grasping that the substance is in a predetermined state remaining in the object to be processed; a step of conveying the object to be processed to a removal treatment tank when the predetermined state is reached; and the removal process And a step of removing a substance remaining in the object to be processed in a tank with a removing liquid.

  In the fourth aspect, as the step of grasping that the predetermined state has been reached, the time until the substance formed on the object to be processed becomes the predetermined state is grasped in advance, and the time It can be mentioned that the predetermined state is reached when the time has elapsed. Further, the step of grasping that the predetermined state has been reached includes detecting the particles of the cleaning liquid and assuming that the predetermined state is reached when the detected value reaches a predetermined value. it can.

  In the third or fourth aspect, the removal treatment tank may remove a substance remaining on the object to be treated and perform a rinse treatment. Further, the step of removing the substance remaining on the object to be processed with the removing liquid can be removed using a means for physically removing the substance formed on the object to be processed. As such a means for physically removing, a shower of the removal liquid may be supplied to the target object in the cleaning tank, or the removal liquid is stored in the removal treatment tank. An ultrasonic wave may be applied to the removal liquid, or the removal liquid may be stirred while the removal liquid is stored in the removal treatment tank. Further, pure water can be used as the removal liquid, and examples of the substance formed on the object to be processed include a resist film or a deposit generated in an etching process.

  According to a fifth aspect of the present invention, there is provided a computer-readable storage medium in which a control program that operates on a computer is stored. The software may be the cleaning method according to the third or fourth aspect when the program is executed. A computer readable storage medium is provided that causes a computer to control a cleaning device as implemented.

  According to the present invention, a cleaning liquid circulation line in which a filter is interposed in the cleaning liquid is attached to the cleaning tank, and a cleaning process is performed halfway in the cleaning tank to perform the separation process of the substance formed on the object to be processed. Since the object to be processed is transported to the removal treatment tank and the removal treatment with the removal liquid is performed while the substance remains in the object to be treated, the amount of the substance taken into the washing liquid in the washing tank can be reduced. This can extend the life of the circulation line filter. In this case, the substance formed on the object to be processed has been peeled off by the treatment in the cleaning tank, but it has been grasped that the substance remains in the predetermined state remaining on the object to be processed. If the treatment object is transferred to the removal treatment tank, the removal amount of the substance in the washing tank is reduced as much as possible, and the treatment object is removed from the washing tank at a timing at which the substance can be sufficiently removed in the removal treatment tank. Can be transported to the tank.

Hereinafter, embodiments of the present invention will be specifically described.
Here, a description will be given of a cleaning system including a cleaning device that performs a process of removing a resist film or the like on a wafer as a substrate. FIG. 1 is a perspective view showing a cleaning system provided with a cleaning apparatus according to the present embodiment, and FIG. 2 is a plan view showing the inside thereof.

  The cleaning system 10 carries in and out the carrier C in which the wafer W is stored in a horizontal state, carries out and stores the carrier C, performs a cleaning process using a predetermined chemical on the wafer W, and performs a drying process and the like. The processing unit 32 and the interface unit 33 that transports the wafer W between the loading / unloading unit 31 and the processing unit 32 are mainly configured.

  The loading / unloading unit 31 can store a plurality of carriers C and a carrier loading / unloading unit 34 on which a stage 41 for mounting a carrier C capable of accommodating a predetermined number, for example, 25 wafers W, is formed. And a carrier stock section 35. The carrier C has a structure in which the wafers W are accommodated substantially horizontally at predetermined intervals, and one side surface thereof serves as a loading / unloading port for the wafers W, and the loading / unloading port can be opened and closed by a lid. The carrier stock portion 35 is provided with a plurality of carrier holding members 43, and the carrier C is held by these carrier holding members 43. The carrier C storing the unprocessed wafer W placed on the stage 41 is loaded into the carrier stock unit 35 by the carrier transfer device 42, while the carrier C storing the processed wafer W is stored in the carrier stock. It is carried out from the unit 35 to the stage 41 using the carrier conveying device 42.

  A shutter 44 is provided between the carrier loading / unloading section 34 and the carrier stock section 35, and the shutter 44 is opened when the carrier C is transferred between the carrier loading / unloading section 34 and the carrier stock section 35. At other times, the shutter 44 is closed, and the atmosphere separation between the carrier carry-in / out section 34 and the carrier stock section 35 is performed.

  The carrier transport device 42 includes an arm 42a that grips the carrier C and transports the carrier C. The arm 42a is driven so that, for example, at least the carrier C can be moved in the X direction. The Further, the carrier conveying device 42 can also move in the Y direction and the Z direction (height direction), so that the carrier C can be placed on the carrier holding member 43 disposed at a predetermined position. It has become.

  The carrier holding member 43 is provided in the vicinity of the wall surface that forms the carrier stock portion 35, and is provided in a plurality of stages, for example, four stages in the height direction at each location. The carrier stock unit 35 temporarily stores the carrier C in which the unprocessed wafer W is stored, and also stores the carrier C in which the inside from which the wafer W is taken out is empty.

  A window portion 46 is formed at the boundary between the carrier stock portion 35 and the interface portion 33, and on the carrier stock portion 35 side of the window portion 46, the carrier C so that the lid of the carrier C faces the window portion 46. An inspection / carrying in / out stage 45 having the same structure as the carrier holding member 43 is provided so that C can be placed. A lid opening / closing mechanism 47 that opens and closes the lid of the carrier C placed on the inspection / loading / unloading stage 45 is provided on the carrier stock 35 side of the window 46. By opening the lid, the wafer W in the carrier C can be carried out to the interface unit 33 side, and the wafer W can be carried into the empty carrier C from the interface unit 33 side.

  A wafer inspection device 48 for measuring the number of wafers W in the carrier C is provided on the interface unit 33 side of the window unit 46. For example, the wafer inspection apparatus 48 inspects the number of wafers W while scanning an infrared sensor head having a transmission unit and a reception unit in the Z direction.

  The interface unit 33 is provided with a wafer carry-in / out device 49, a wafer transfer device 51, and a wafer transfer device 52. The wafer transfer device 51 transfers the wafer W to and from the wafer carry-in / out device 49 and converts the posture of the wafer W, and between the posture changing mechanism 51 a and the wafer transfer device 52. And a wafer vertical holding mechanism 51b for delivering the wafer W.

  The wafer loading / unloading device 49 unloads the wafer W in the carrier C through the window 46 and delivers it to the posture changing mechanism 51a, and receives the wafer W after liquid processing from the posture changing mechanism 51a and loads it into the carrier C. . This wafer carry-in / out device 49 has two systems of arms 49a, an arm 49a for carrying an unprocessed wafer W and an arm 49b for carrying a processed wafer W. The arms 49a and 49b can collectively hold a plurality of wafers W stored in the carrier C. Further, in the state shown in FIG. 2, the arms 49a and 49b are movable in the direction of arrow A and can be moved up and down, and are further rotatable in the θ direction. As a result, the arms 49a and 49b can access both the carrier C mounted on the inspection / carrying-in / out stage 45 and the posture changing mechanism 51a.

  In the wafer loading / unloading device 49, for example, in a state where the arm 49a is on the wafer transfer device 51 side, the arm 49a is inserted below the wafer W and then lifted to hold the wafer W on the arm 49a. 49a is moved in the reverse direction, and the wafer W in the carrier C is unloaded. Next, after the wafer carry-in / out device 49 is rotated by 90 °, the arm 49a is moved to transfer the wafer W held on the arm 49a to the posture changing mechanism 51a. On the other hand, in a state where the arm 49b is on the processing unit 32 side, the arm 49b is moved to take out the wafer W after the liquid processing from the posture changing mechanism 51a, and then the wafer carry-in / out device 49 is rotated by 90 ° to move the arm 49b. The wafer W held on the arm 49b is carried into an empty carrier C by moving the arm 49b in a state of being on the wafer transfer device 51 side.

  In the posture changing mechanism 51a of the wafer transfer device 51, a plurality of wafers W in the horizontal direction are received from the wafer carry-in / out device 49 by the guide member, and the guide member is rotated in this state to convert the posture of the wafer to the vertical state. .

  The wafer vertical holding mechanism 51b can store 50 wafers W for two carriers whose posture has been changed to the vertical state by the posture changing mechanism 51a at an arrangement pitch that is half the wafer arrangement pitch in the carrier C. The wafers W for the two carriers are transferred to the wafer transfer device 52.

  The wafer transfer device 52 transfers the wafer W in the vertical state to the wafer vertical holding mechanism 51b, loads the unprocessed wafer W into the processing unit 32, and conversely transfers the wafer W that has undergone liquid processing or the like. It is unloaded from the processing unit 32 and transferred to the wafer vertical holding mechanism 51b. In the wafer transfer device 52, the wafer W is held by three chucks 58a to 58c. The wafer transfer device 52 is moved along the guide rail 53 so that the wafer transfer device 52 can transfer the wafer W to and from the wafer vertical holding mechanism 51 b and transfer the wafer W to the processing unit 32. It moves in the X direction and can enter / exit the processing unit 32.

  A wafer detection sensor 57 that inspects the arrangement state of the wafers W is provided at a position where the wafers W are transferred between the wafer vertical holding mechanism 51b and the wafer transfer device 52.

  The interface unit 33 is provided with a parking area 40a capable of waiting for an unprocessed wafer W on the side of the position where the wafer W is transferred between the wafer vertical holding mechanism 51b and the wafer transfer device 52. It has been. For example, when liquid processing or drying processing is performed on a lot of wafers W, the wafer W to be started next is parked using a time during which it is not necessary to operate the wafer transfer device 52. It is conveyed to the area 40a. Thereby, for example, as compared with the case where the wafer W is transferred from the carrier stock unit 35, it is possible to shorten the movement time of the wafer W to the processing unit 32 and to improve the throughput.

  The processing unit 32 includes a cleaning processing unit 38, a drying unit 39, and a parking area 40b. The drying unit 39, the cleaning processing unit 38, and the parking area 40b are arranged in this order from the interface unit 33 side. Yes. The wafer transfer device 52 can move in the processing section 32 along a guide rail 53 extending in the X direction.

  Similar to the parking area 40a, the parking area 40b is a place where an unprocessed wafer W is waited. The wafer W in the lot where the liquid processing or the drying processing is performed is performed, and the wafer W to be subjected to the next liquid processing is transferred to the parking area 40b using the time when the wafer transfer device 52 is not required to be operated. The Thereby, the moving time of the wafer W during the cleaning process can be shortened and the throughput can be improved.

  The cleaning unit 38 includes a first cleaning unit 61 that performs a stripping process of the resist film and the like on the wafer W, a first rinse unit 62 that performs a rinsing process and functions as a removal tank for the resist film and the like, and a first cleaning unit that performs final cleaning. 2 cleaning sections 63 and a second rinse section 64 for rinsing after finishing cleaning, which are arranged in this order from the parking area 40b side toward the drying unit 39 side. The cleaning unit 38 includes a transfer device 67 for transferring the wafer W between the first cleaning unit 61 and the first rinse unit 62, a second cleaning unit 63, and a second rinse unit 64. And a transfer device 68 for transferring the wafer W between them. The first cleaning unit 61, the first rinsing unit 62, the transport device 67, and the control system thereof constitute the cleaning device 80 of this embodiment. The cleaning device 80 will be described in detail later.

  The transfer device 67 lowers the wafer W transferred from the wafer transfer device 52, immerses it in the cleaning liquid stored in the first cleaning unit 61, pulls it up after a predetermined time, and then translates the wafer W in the X direction. Then, the wafer W is positioned immediately above the first rinse section 62, and then the wafer is lowered, immersed in the rinse liquid stored in the first rinse section 62, held for a predetermined time, and then lifted. The wafer W that has been processed in the first rinsing unit 62 is once returned to the chucks 58 a to 58 c of the wafer transfer device 52 and then transferred from the wafer transfer device 52 to the transfer device 68. The transport device 68 has the same configuration as the transport device 67 and operates in the same manner.

  The drying unit 39 is provided with a chuck cleaning mechanism 56 that cleans the water washing tank 54 and the chucks 58a to 58c of the wafer transfer device 52. The upper part of the water washing tank 54 is supplied with, for example, isopropyl alcohol (IPA) vapor. A drying chamber (not shown) for drying the wafer W is provided. Further, a transfer device 55 for transferring the wafer W between the washing tank 54 and the drying chamber is provided, and the wafer W washed with water in the washing bath 54 is pulled up by the transfer device 55 and is IPA dried in the drying chamber. It is like that. The transfer device 55 is configured in the same manner as the transfer device 67 and the like described above except that it cannot move in the X direction, and the wafer W can be transferred to and from the wafer transfer device 52.

  As shown in FIG. 1, a central control unit 70 that controls each component of the cleaning system 10 is provided on the side of the carry-in / out unit 31. As shown in FIG. 3, the central control unit 70 includes a process controller 71 including a microprocessor (computer) that controls each component of the cleaning system 10, and a process manager that controls each component of the cleaning system 10. A process for performing various processes executed by the cleaning system 10 and a user interface 72 including a keyboard that performs command input operations for management, a display that visualizes and displays the operating status of each component of the cleaning system 10, and the like. And a storage unit 73 storing a recipe in which a control program to be realized by the control of the controller 71 and processing condition data are stored. The user interface 72 and the storage unit 73 are connected to the process controller 71. Yes.

  If necessary, the cleaning system 10 receives various instructions from the user interface 72, calls an arbitrary recipe from the storage unit 73, and causes the process controller 71 to execute various recipes in the cleaning system 10 under the control of the process controller 71. Processing is performed. For example, the recipe may be stored in a readable storage medium such as a CD-ROM, a hard disk, a flexible disk, or a nonvolatile memory. It can also be transmitted and used online. Each component unit is provided with a lower-level controller, and these controllers control the operation of each component unit based on a command from the process controller 71.

  Next, the cleaning device 80 of the present embodiment including the first cleaning unit 61, the first rinse unit 62, and the transport device 67 will be described. FIG. 4 is a schematic configuration diagram showing such a cleaning device 80 of the present embodiment.

  The cleaning device 80 includes a controller 100 that controls the first cleaning unit 61, the first rinse unit 62, and the transport device 67 described above. The controller 100 exchanges signals with the process controller 71 that controls the process of the entire apparatus, and controls each component of the cleaning apparatus 80 based on a command from the process controller 71.

  The first cleaning unit 61 includes a cleaning tank 101 having a box-shaped inner tank 101 a and an outer tank 101 b that are large enough to accommodate the wafer W. The upper surface of the inner tank 101a is open, and the wafer W is taken in and out of the inner tank 101a through the opening on the upper surface. Further, a nozzle 103 for supplying a cleaning liquid into the inner tank 101a is provided at the lower part of the inner tank 101a. The cleaning liquid supplied from the nozzle 103 into the inner tank 101a fills the inner tank 101a and overflows. The outer tub 101b is mounted so as to surround the opening of the inner tub 101a so as to receive the cleaning liquid overflowed from the upper end of the inner tub 101a.

  The inner tank 101a and the outer tank 101b are connected by a circulation line 104 that circulates and supplies a cleaning liquid during the wafer W cleaning process. One of the circulation lines 104 is connected to the bottom surface of the outer tub 101b, and the other is connected to the nozzle 103. The cleaning liquid flowing out from the bottom surface of the outer tub 101b is introduced into the inner tub 101a via the nozzle 103. In the middle of the circulation line 104, a particle sensor 111, a heater 112, a pump 113, a first filter 114, a second filter 115, and a flow rate adjustment valve 116 are sequentially provided in the circulation line 104. . The first filter 114 has coarse eyes and traps, for example, a substance having a size of 10 μm or more, and the second filter 115 has fine eyes, for example, traps a substance having a size of 0.1 μm or more. Therefore, the cleaning liquid overflowed from the inner tank 101a to the outer tank 101b flows into the circulation line 104, and the cleaning liquid heated by the heater 112 by the operation of the pump 113 is filtered by the first and second filters 114 and 115 at a predetermined flow rate. It is introduced from the nozzle 103 into the inner tank 101a. In this manner, the filter life can be somewhat extended by providing the filter in two stages. In addition, an ultrasonic vibrator 117 is provided outside the bottom of the inner tank 101a, whereby the cleaning liquid in the inner tank 101a can be vibrated with ultrasonic waves to further increase the cleaning power. A cleaning liquid discharge pipe 118 is connected to the bottom of the inner tank 101a, and a cleaning liquid supply pipe 119 is connected to the circulation line 104 so that the cleaning liquid can be replaced or replenished.

  The cleaning liquid introduced into the cleaning tank 101 is for stripping a resist film formed on the wafer W, a deposit in the etching process, and the like, and an organic stripping liquid is exemplified. The resist film or the like is lifted from the wafer W by such an organic stripping solution.

  As described above, the first rinsing section 62 functions as a rinsing process and a removal processing tank for resist films and the like. Specifically, the first rinsing section 61 uses the organic stripping solution to remove the resist. After performing the peeling process, etc., the wafer W with the resist film remaining on the wafer W is loaded, and the resist film etc. is peeled off from the wafer W almost completely and removed from the wafer W. .

  The first rinse section 62 has a box-shaped rinse tank 121 having a size sufficient to accommodate the wafer W. The upper surface of the rinsing tank 121 is open, and the wafer W is inserted into and removed from the rinsing tank 121 through the opening on the upper surface. A lower part of the rinsing tank 121 has a nozzle 123 for supplying a rinsing liquid functioning as a removing liquid into the rinsing tank 121. A rinsing liquid supply pipe 124 is connected to the nozzle 123, and the rinsing liquid is supplied from the rinsing liquid supply pipe 124 through the nozzle 123 into the rinsing tank 121, and the wafer W is rinsed into the rinsing liquid in the rinsing tank 121. It can be in an immersed state. An opening / closing valve 125 and a flow rate adjusting valve 126 are interposed in the rinse liquid supply pipe 124. A rinse liquid discharge pipe 127 is connected to the bottom of the rinse tank 121 so that the rinse liquid can be discharged from the rinse tank 121. As the rinse liquid used in the first rinse section 62, pure water is preferable.

  A shower head 131 is provided above the rinse tank 121. A rinsing liquid supply pipe 132 is connected to the shower head 131, and the rinsing liquid can be supplied from the rinsing liquid supply pipe 132 through the shower head 131 to the wafer W in the rinsing tank 121 in a shower shape. . The rinsing liquid supply pipe 132 is provided with an opening / closing valve 133 and a flow rate adjusting valve 134. Further, an ultrasonic transducer 135 is provided outside the bottom of the rinse tank 121. The shower head 131 and the ultrasonic transducer 135 function as a physical removing unit. That is, by applying a rinsing liquid shower to the wafer W on which the resist film or the like that has been peeled is present, or by applying ultrasonic vibration to the rinsing liquid in which the wafer W is immersed, a physical force acts on the resist film to remove it. Can be increased. When the rinsing liquid is supplied from the shower head 131 to the wafer W, a large physical force can be applied by performing the rinsing liquid in the rinsing tank 121 while the wafer W is exposed from the rinsing liquid. As such a physical peeling means, a means for stirring the rinse liquid stored in the rinse tank 121 can also be used. For example, stirring can be performed by moving the holding member 141 holding the wafer W up and down by the drive mechanism 142 while the wafer W is immersed in the rinse liquid.

  The transfer device 67 includes a wafer holding member 141 that holds a plurality of, for example, 50 wafers W, and a drive mechanism 142 that drives the wafer holding member 141 in the vertical direction (Z direction) and the horizontal direction (X direction). Have. With this transfer device 67, the wafer W can be received from the wafer transfer device 52, transferred to the first cleaning unit 61, and further transferred from the first cleaning unit 61 to the first rinse unit 62. Specifically, the wafer holding member 141 holding the wafer W delivered from the wafer transfer device 52 is moved above the first cleaning unit 61, and the driving mechanism 142 moves the holding member 141 up and down there. Thus, the wafer W can be taken in and out of the inner tank 101a of the first cleaning unit 61, and the holding member 141 is moved upward in the X direction to be positioned above the first rinse unit 62. Therefore, by moving the holding member 141 up and down by the drive mechanism 142, the wafer W can be taken in and out of the rinse tank 121 of the first rinse section 62.

  Control of the timing at which the wafer W is transferred from the first cleaning unit 61 to the first rinsing unit 62 is performed by, for example, immersing the wafer W in a cleaning liquid in the inner tank 101a of the first cleaning unit 61, for example, an organic stripping solution. After that, the time until the peeling state of the resist film or the like becomes an appropriate state is grasped in advance, and the time is stored in the storage unit of the controller 100, and when the time elapses, the controller 100 drives the driving mechanism 142. It is possible to transfer the wafer W by issuing a transfer command. An example of the appropriate state is a state in which the resist film or the like is almost peeled off, but the most part still remains on the wafer W. In addition, the controller 100 can issue a conveyance command to the drive mechanism 142 when the detection value of the particle sensor 111 becomes a predetermined value or more. When the resist film is about to peel off, it is thought that fine particles such as the resist film have already detached from the wafer. By grasping the amount of particles in the cleaning solution, the state of the resist film etc. is about to be peeled off. can do.

Next, the cleaning process by the cleaning system 10 configured as described above will be described.
First, the carrier C storing, for example, 25 unprocessed wafers W is placed on the carrier loading / unloading section 34 of the loading / unloading section 31. In this state, the shutter 44 is opened, and the carrier C placed on the carrier carry-in / out unit 34 is carried into the carrier stock unit 35 by the carrier carrying device 42. In the carrier stock unit 35, the carrier C is placed on the inspection / loading / unloading stage 45 so as to face the window 46. Then, the window 46 is opened by the lid opening / closing mechanism 47, the number of wafers W in the carrier C is measured by the wafer inspection device 48, and whether or not the wafers W are arranged in parallel at a predetermined pitch is appropriately detected. Thereafter, the wafer loading / unloading device 49 unloads 25 wafers W stored in one carrier C through the window 46, and the posture changing mechanism 51a moves the 25 wafers W from the horizontal state to the vertical state. Convert. Then, the wafer is transferred to the wafer vertical holding mechanism 51b. Subsequently, 25 wafers W from the second carrier C are transferred to the attitude changing mechanism 51a by the wafer carry-in / out device 49, and transferred to the wafer vertical holding mechanism 51b. The wafer vertical holding mechanism 51b halves the arrangement pitch of the wafers W, and a total of 50 wafers W stored in the two carriers C are stored. In this state, the wafer transfer device 52 receives the wafer W from the wafer vertical holding mechanism 51b and appropriately waits in the parking areas 40a and 40b. Then, the cleaning device 80 in the processing section 32 uses the wafer W resist film, etching deposit, etc. Perform removal processing.

This removal process will be described with reference to FIGS. FIG. 5 is a flowchart showing the flow of the removal process, and FIG. 6 is a schematic diagram showing each step of the removal process.
First, a plurality of, for example, 50 wafers W are transferred from the wafer transfer device 52 to the wafer holding member 141 of the transfer device 67 (step 1). Subsequently, by moving the holding member 141 of the transfer device 67 directly above the first cleaning unit 61 and further lowering the holding member 141, the wafer W is stored in the inner tank 101a of the first cleaning unit 61, for example, organic The resist film and the etching deposit formed on the wafer W are stripped while being immersed in a stripping solution and circulating the cleaning solution (step 2, FIG. 6A).

  When the peeling process proceeds and the resist film or the like on the wafer W is about to be peeled off, but a large part still remains, and the resist film or the like is easily peeled off at the first rinse portion 62. Then, the wafer W is rinsed from the inner tank 101a of the first cleaning unit 61 by the transfer device 67 and transferred to the rinse tank 121 of the first rinse unit 62 that functions as a removal tank for the resist film or the like (step 3). FIG. 6 (b)). The transfer timing at this time is preferably a state in which the resist film or the like is in an appropriate peeled state, for example, a state in which the resist film or the like is about to peel off, but most of the resist film still remains on the wafer W. In order to transfer the wafer W to the first rinsing unit 62 at the timing, as described above, the time for such a state is grasped in advance and the time is managed by the controller 100, or the particle sensor It is preferable to carry out control so that the detected value is conveyed when it becomes a value corresponding to such a state.

  In the rinsing tank of the first rinsing section 62, rinsing is performed using a rinsing liquid, for example, pure water, and the resist film or the like that has been peeled off from the wafer W is removed by the rinsing liquid (step 4, FIG. 6C). ). At this time, the resist film or the like can be removed simply by overflowing the rinsing liquid from the rinsing tank 121, but the removal power can be further increased by using some physical means. For example, as described above, the rinsing liquid can be supplied from the shower head 131 to the wafer W (see FIG. 6C), or the ultrasonic vibrator 135 can be used for some kind of stirring. A stirring force can be applied to the rinsing liquid by means.

  In this way, after removing the resist film and the like by the first rinsing unit 62, the wafer W is returned to the first cleaning unit 61 and the residue is removed (step 5, FIG. 6 (d)). Thereby, the resist film and the etching deposit are almost completely removed.

  The wafer W cleaned in the first cleaning unit 61 in this way is transferred to the transfer device 67 via the wafer transfer device 52, transferred to the second cleaning unit 63 by the transfer device 67, and finished for cleaning. Is performed (step 6). The second cleaning unit 63 has the same structure as the first cleaning unit 61, and particles and the like attached to the surface of the wafer W are removed by performing chemical cleaning there. As the cleaning liquid at this time, an organic stripping liquid can be used as in the first cleaning unit 61. Thereafter, the wafer W is transferred to the second rinse section 64 by the transfer device 68 and rinse treatment is performed (step 7). Thus, the resist peeling process is completed.

  Conventionally, when removing the resist film or the like, the cleaning liquid is circulated and the cleaning unit provided with a filter in the circulation circuit also removes the resist film and the like. Although there was a problem of clogging, as described above, in the first cleaning unit 61 provided with the filter, the resist film or the like is being removed, but the resist film or the like remains. In the first cleaning section 61, the components trapped in the filter can be remarkably reduced because the removal of the resist film and the like is performed by the first rinse section 62 as a removal tank. The filter life can be greatly extended.

  In order to sufficiently exhibit such an effect and to obtain a high removal effect, the transfer timing from the first cleaning unit 61 to the first rinsing unit 62 is important as described above. That is, when the removal process of the resist film or the like in the first cleaning part 61 is insufficient, the resist film or the like cannot be sufficiently removed by the removal process of the first rinse part 62, and the first If the stripping process of the resist film or the like in the cleaning unit 61 proceeds excessively, the effect of extending the filter life becomes insufficient. Therefore, it is necessary to determine the transfer timing of the wafer W in consideration of such points.

  As described above, the physical removal means such as the shower head 131 and the ultrasonic vibrator 135 is provided in the rinse tank 121 of the first rinse section 62, and thereby the resist film removal effect is enhanced, thereby The removal process of the resist film or the like in the cleaning unit 61 can be reduced, and the remaining amount of the resist film or the like when the wafer W is transferred to the first rinse unit 62 can be increased. The effect to extend can be made higher.

  From the viewpoint of placing importance on the removal effect at the first rinsing section 62, even if the stripping process at the first cleaning section 61 is sufficiently performed and the removal of the resist film or the like proceeds, the resist film remains to some extent. If the wafer W can be transferred to the first rinse section 62 in the state, the effect of extending the filter life can be obtained.

  The wafer W that has been processed in the cleaning processing unit 38 in this way is transferred from the transfer device 38 to the transfer device 55 of the drying unit 39 via the wafer transfer device 52 and washed in the water washing tank 54. The IPA is dried in the drying chamber above it.

  The wafer W after the drying process is returned to the interface unit 33 by the wafer transfer device 52, and appropriately waits in the parking area 40a. After that, the wafer W is subjected to pitch conversion and posture conversion in the reverse order of the above-mentioned procedure at the interface section 33 and is stored in the carrier C at the load-in / out section 31. The carrier C storing the processed wafer W is placed on the carrier carry-in / out section 34 and carried out of the cleaning system 10.

  In addition, this invention is not limited to the said embodiment, A various deformation | transformation is possible within the range of the thought of this invention. For example, in the above-described embodiment, a batch type immersion type cleaning apparatus is shown as an example, but a single wafer type apparatus may be used as long as it is an immersion type cleaning apparatus. Moreover, in the said embodiment, although the rinse tank was used as a tank which removes a resist film etc., it is not restricted to this, You may use a tank only for removal. Further, the removal liquid used in such a removal tank is not limited to a rinse liquid such as pure water, and an appropriate chemical liquid may be used. Furthermore, in the above-described embodiment, an example in which the present invention is applied to the resist film or etching deposit peeling process has been described. However, the present invention is not limited thereto, and is effective for peeling other deposits and the like. In the above-described embodiment, a case where a semiconductor wafer is applied as the object to be processed has been described. However, other objects to be processed such as a flat panel display (FPD) substrate represented by a glass substrate for a liquid crystal display (LCD) are cleaned. It can also be applied to processing.

  The present invention is suitable for removing substances formed on an object to be processed such as a semiconductor wafer, particularly organic substances such as a resist film and an etching deposit.

The perspective view which shows the washing | cleaning system provided with the washing | cleaning apparatus which concerns on one Embodiment of this invention. The top view which shows the inside of the washing | cleaning system provided with the washing | cleaning apparatus which concerns on one embodiment of this invention. The block diagram which shows the control system of the washing | cleaning system of FIG. The schematic block diagram which shows the washing | cleaning apparatus which concerns on one Embodiment of this invention. The flowchart which shows the flow of removal processing, such as a resist film and an etching deposit. Schematic which shows each process of the removal process shown to the flowchart of FIG.

Explanation of symbols

61; 1st cleaning part 62; 1st rinse part 67; Conveying device 70; Central control part 71; Process controller 72; User interface 73; Storage part 100; Controller 101; Cleaning tank 101a; Inner tank 101b; 103; Nozzle 104; Circulation line 111; Particle sensor 114, 115; Filter 121; Rinse tank (removal processing tank)
123; Nozzles 124 and 132; Rinsing liquid supply piping 131; Shower head 135; Ultrasonic vibrator 141; Wafer holding member 142; Drive mechanism W; Semiconductor wafer

Claims (24)

A cleaning device that removes a substance formed on an object to be processed,
A cleaning tank for storing a cleaning liquid for performing a peeling process of the substance, and a cleaning tank for performing a cleaning process by immersing an object to be processed therein,
A circulation line through which a filter is interposed to circulate the cleaning liquid in the cleaning tank;
A removal treatment tank for performing a removal treatment for removing the substance remaining in the object to be treated, which has been washed in the washing tank, with a removal liquid;
A cleaning apparatus comprising: a transfer device that transfers an object to be processed between the cleaning tank and the removal processing tank. A cleaning device that removes a substance formed on an object to be processed,
A cleaning tank for storing a cleaning liquid for performing a peeling process of the substance, and a cleaning tank for performing a cleaning process by immersing an object to be processed therein,
A circulation line through which a filter is interposed to circulate the cleaning liquid in the cleaning tank;
A removal treatment tank for performing a removal treatment for removing a substance remaining in the object to be treated, which has been washed in the washing tank, with a removal liquid;
A transfer device for transferring an object to be processed between the cleaning tank and the removal processing tank;
When the substance formed on the object to be processed has been peeled off by the treatment in the cleaning tank, but the substance remains in the object to be processed, the transport apparatus is processed. And a controller that issues a command to convey the body from the cleaning tank to the removal processing tank.   The control unit stores a time obtained until the substance formed on the object to be processed is in the predetermined state, and issues the command to the transfer device when the time has elapsed. The cleaning apparatus according to claim 2.   The conveyance device further includes a particle sensor that detects particles in the cleaning liquid, and the control unit receives a detection value of the particle sensor and the detection value becomes a value corresponding to the predetermined state. The cleaning apparatus according to claim 2, wherein the command is issued to the apparatus.   The said removal processing tank has a function which performs the rinse process after washing | cleaning, The cleaning apparatus of any one of Claims 1-4 characterized by the above-mentioned.   The cleaning apparatus according to any one of claims 1 to 5, wherein the removal treatment tank has means for physically removing a substance formed on the object to be treated.   The cleaning apparatus according to claim 6, wherein the means for physically removing includes a shower head that supplies a shower of the removal liquid to the target object in the cleaning tank.   The cleaning apparatus according to claim 6, wherein the means for physically removing includes an ultrasonic vibrator that applies ultrasonic waves to the removal liquid in a state where the removal liquid is stored in the removal treatment tank.   The cleaning apparatus according to claim 6, wherein the means for physically removing includes stirring means for stirring the removal liquid in a state where the removal liquid is stored in the removal treatment tank.   The cleaning tank has an inner tank in which the cleaning liquid is stored and an outer tank that receives the cleaning liquid overflowed from the inner tank, and the circulation line supplies the cleaning liquid discharged from the outer tank to the inner tank. The cleaning apparatus according to any one of claims 1 to 9, wherein the cleaning apparatus is characterized in that:   The cleaning apparatus according to claim 1, wherein the removing liquid is pure water.   12. The cleaning apparatus according to claim 1, wherein the substance formed on the object to be processed is a resist film or a deposit generated in an etching process. A cleaning method for removing a substance formed on an object to be processed,
A step of storing a cleaning liquid for performing the separation treatment of the substance in a cleaning tank, and immersing the object to be processed in the cleaning liquid in the cleaning tank while circulating the cleaning liquid through a circulation line in which a filter is interposed; ,
A step of conveying the object to be processed to a removal treatment tank when the substance remains in the object to be processed;
And a step of removing a substance remaining on the object to be processed in the removal treatment tank with a removal liquid. A cleaning method for removing a substance formed on an object to be processed,
Storing a cleaning liquid for performing the separation treatment of the substance in a cleaning tank, and performing a cleaning process by immersing the target object in the cleaning liquid in the cleaning tank while circulating the cleaning liquid through a circulation line in which a filter is interposed; and ,
A step of grasping that the substance formed in the object to be processed by the treatment in the cleaning tank is in a predetermined state in which the substance remains in the object to be processed;
When the predetermined state is reached, the process of transporting the object to be removed to the removal treatment tank;
And a step of removing a substance remaining on the object to be processed in the removal treatment tank with a removal liquid.   In the step of grasping that the predetermined state has been reached, the time required for the substance formed on the object to be processed to be in the predetermined state is grasped in advance, and when the time has elapsed, the predetermined state is reached. The cleaning method according to claim 14, wherein:   15. The step of grasping that the predetermined state is attained is that particles of the cleaning liquid are detected, and the predetermined state is reached when the detected value reaches a predetermined value. The cleaning method according to 1.   The cleaning method according to any one of claims 13 to 16, wherein the removal treatment tank removes a substance remaining in the object to be treated and performs a rinsing treatment.   18. The step of removing the substance remaining on the object to be processed with the removing liquid is performed using a means for physically removing the substance formed on the object to be processed. The cleaning method according to any one of the above.   The cleaning method according to claim 18, wherein the means for physically removing supplies a shower of a removal liquid to an object to be processed in the cleaning tank.   The cleaning method according to claim 18, wherein the means for physically removing causes an ultrasonic wave to act on the removal liquid while the removal liquid is stored in the removal treatment tank.   19. The cleaning method according to claim 18, wherein the means for physically removing stirs the removal liquid in a state where the removal liquid is stored in the removal treatment tank.   The cleaning method according to any one of claims 13 to 21, wherein the removing liquid is pure water.   23. The cleaning method according to claim 13, wherein the substance formed on the object to be processed is a resist film or a deposit generated in an etching process. A computer-readable storage medium storing a control program that runs on a computer,
24. A computer-readable storage medium, wherein the software causes a computer to control a cleaning device so that the cleaning method according to any one of claims 13 to 23 is performed when the program is executed.

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