JP2007294852A - Electrostatic chuck - Google Patents

Electrostatic chuck Download PDF

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JP2007294852A
JP2007294852A JP2006341355A JP2006341355A JP2007294852A JP 2007294852 A JP2007294852 A JP 2007294852A JP 2006341355 A JP2006341355 A JP 2006341355A JP 2006341355 A JP2006341355 A JP 2006341355A JP 2007294852 A JP2007294852 A JP 2007294852A
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electrostatic chuck
dielectric layer
elastic layer
adsorption
glass substrate
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JP2007294852A5 (en
JP4808149B2 (en
Inventor
Tadayoshi Yoshikawa
忠義 吉川
Naoto Hayashi
直人 林
Hiroshi Yonekura
寛 米倉
Yoshiki Saito
美喜 齋藤
Teruki Tamagawa
晃樹 玉川
Hitoshi Kaneko
等 金子
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2006341355A priority Critical patent/JP4808149B2/en
Priority to KR1020070029275A priority patent/KR20070098566A/en
Priority to TW096110483A priority patent/TW200800478A/en
Publication of JP2007294852A publication Critical patent/JP2007294852A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrostatic chuck which permits the vacuum holding of an object to be absorbed, which is poor in the flatness of surface such as a glass substrate having variability in thickness, and which is capable of developing a given absorption power in spite of the individual difference of objects to be absorbed. <P>SOLUTION: The electrostatic chuck comprises: a dielectric layer 12 which absorbs an object to be absorbed; an elastic layer 16 which permits the deformation of the dielectric layer; and electrodes 14a, 14b, positioned between the absorbing surface 22 of the dielectric layer 12 and the elastic layer 16 to generate electrostatic charge necessary for the absorption. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、ガラス基板などの吸着保持に用いられる静電チャックに関する。   The present invention relates to an electrostatic chuck used for suction holding of a glass substrate or the like.

フラットパネルディスプレイ（ＦＰＤ）の製造では、ガラス基板の吸着保持に静電チャックが用いられている。例えば、液晶パネル製造の液晶注入工程では、真空中でのガラス基板保持用に、吸着面がセラミック焼結体製、セラミック溶射製、アルマイト製、又はポリイミド製の静電チャックを使用している。   In the manufacture of a flat panel display (FPD), an electrostatic chuck is used for attracting and holding a glass substrate. For example, in a liquid crystal injection process for manufacturing a liquid crystal panel, an electrostatic chuck having a suction surface made of a ceramic sintered body, ceramic sprayed, anodized, or polyimide is used for holding a glass substrate in a vacuum.

図５に、従来の静電チャックを模式的に示す。この図の静電チャックは双極タイプであり、ガラス板などの被吸着物（図示せず）を吸着する誘電層１０２に、２つの電極１０４ａ、１０４ｂが埋め込まれている。電極１０４ａ、１０４ｂに電圧を印加することにより誘電層１０２と被吸着物に反対の電荷を生じさせ、静電力（クーロン力）で被吸着物を吸着面１１０に吸着保持する。誘電層１０２は、被吸着物を吸着する吸着面１１０の平坦度を高い精度で維持するため、変形しない材料（セラミックなど）や構造で製作され、電極１０４はニッケル、銅板などで製作される。誘電層１０２は、アルミニウム合金等で製作された架台１０６の上に配置される。電極１０４は給電部１０８に接続される。双極タイプのほかに、電極が１つだけの単極タイプの静電チャックも使用されている。   FIG. 5 schematically shows a conventional electrostatic chuck. The electrostatic chuck in this figure is of a bipolar type, and two electrodes 104a and 104b are embedded in a dielectric layer 102 that adsorbs an object to be adsorbed (not shown) such as a glass plate. By applying a voltage to the electrodes 104a and 104b, opposite charges are generated in the dielectric layer 102 and the object to be adsorbed, and the object to be adsorbed is adsorbed and held on the adsorption surface 110 by electrostatic force (Coulomb force). The dielectric layer 102 is made of a material (such as ceramic) or a structure that does not deform in order to maintain the flatness of the attracting surface 110 that attracts the object to be adsorbed with high accuracy, and the electrode 104 is made of nickel, a copper plate, or the like. The dielectric layer 102 is disposed on a gantry 106 made of an aluminum alloy or the like. The electrode 104 is connected to the power supply unit 108. In addition to the bipolar type, a single-pole type electrostatic chuck having only one electrode is also used.

以前のパネルは比較的小さかったために、ガラス基板の場合には、安定して吸着するのに必要な静電荷を蓄えることができず、吸着に静電チャックを使用するのは実用的でなかった。そのため、例えば特許文献１では、静電チャックによって吸着される吸着膜をガラス基板に設けることにより、静電チャックを使ってガラス基板を吸着保持する方法が提案されている。   Since the previous panel was relatively small, in the case of a glass substrate, the electrostatic charge necessary for stable adsorption could not be stored, and it was not practical to use an electrostatic chuck for adsorption. . For this reason, for example, Patent Document 1 proposes a method of attracting and holding a glass substrate using an electrostatic chuck by providing an adsorption film that is attracted by the electrostatic chuck on the glass substrate.

近年、パネルの大型化が進み、一例として第７世代を越えるガラス基板（２０００ｍｍ四方程度、例えば２２００×１９００ｍｍの大きさを有する）は、表面積が大きく、十分な静電荷を蓄えることができることから、静電チャックでの直接の吸着保持が可能になっている。ところが、第７世代を越えるガラス基板は、その厚さが±１５％程度ばらつく（一般的な０．７ｍｍ厚の基板で±０．１ｍｍ）ことから、図６に模式的に示したように従来の静電チャック１２０では吸着面に対してガラス基板１２２の表面が接触しない部分１２４が存在し、そのため吸着力が不足して（吸着力は接触面積に比例する）、最悪の場合にはガラス基板の落下を招くことがある。また、そのようなガラス基板を静電チャックで吸着保持して液晶注入・パネル貼り合わせ装置で処理する場合には、均一な液晶の注入が行われず、液晶パネルの特性に悪影響を及ぼしかねない。   In recent years, the size of the panel has increased, and as an example, a glass substrate exceeding the seventh generation (having a size of about 2000 mm square, for example, 2200 × 1900 mm) has a large surface area and can store a sufficient electrostatic charge. Direct suction holding with an electrostatic chuck is possible. However, the glass substrate exceeding the seventh generation has a thickness variation of about ± 15% (± 0.1 mm for a general 0.7 mm thick substrate), and as shown schematically in FIG. In the electrostatic chuck 120, there is a portion 124 where the surface of the glass substrate 122 does not come into contact with the attracting surface. Therefore, the attracting force is insufficient (the attracting force is proportional to the contact area). May cause a fall. Further, when such a glass substrate is sucked and held by an electrostatic chuck and processed by a liquid crystal injection / panel bonding apparatus, uniform liquid crystal injection is not performed, which may adversely affect the characteristics of the liquid crystal panel.

特開２０００−２０８５９４号公報JP 2000-208594 A

本発明は、厚さにばらつきのあるガラス基板のような、表面の平坦性が乏しい被吸着物の吸着保持を可能にし、被吸着物の個体差によらず一定の吸着力を発現することができる静電チャックの提供を目的とする。   The present invention makes it possible to adsorb and hold objects to be adsorbed with poor surface flatness, such as glass substrates with variations in thickness, and to express a certain adsorbing power regardless of individual differences in objects to be adsorbed. An object of the present invention is to provide an electrostatic chuck.

本発明の静電チャックは、被吸着物を吸着する吸着面を有する誘電層、誘電層の変形を可能にする弾性層、及び誘電層の吸着面と弾性層との間に位置する、吸着に必要な静電荷を発生させるための電極を含むことを特徴とする。   The electrostatic chuck of the present invention is a dielectric layer having an adsorption surface that adsorbs an object to be adsorbed, an elastic layer that enables deformation of the dielectric layer, and an adsorption layer that is located between the adsorption surface of the dielectric layer and the elastic layer. It includes an electrode for generating a necessary electrostatic charge.

本発明の静電チャックにおいて、誘電層は有機樹脂材料で製作することができる。有機樹脂材料は２以上の比誘電率を有することが好ましく、好適なものとしてポリエステルを挙げることができる。   In the electrostatic chuck of the present invention, the dielectric layer can be made of an organic resin material. The organic resin material preferably has a relative dielectric constant of 2 or more, and polyester can be mentioned as a preferable material.

弾性層は、例えばシリコーンゴムで製作することができ、シリコーンゴムは５５以上のショアーＡ硬度を示すことが好ましい。
また、弾性層の比抵抗は１０13Ω・ｃｍ以下が好ましく、それにより被吸着物の電荷を容易に放出可能として、速やかな離脱性と、電荷の蓄積によるセルやデバイスの破壊防止を実現することができる。 The elastic layer can be made of, for example, silicone rubber, and the silicone rubber preferably exhibits a Shore A hardness of 55 or more.
Further, the specific resistance of the elastic layer is preferably 10 13 Ω · cm or less, so that the charge of the object to be adsorbed can be easily released, thereby realizing quick release and prevention of cell or device destruction due to charge accumulation. be able to.

本発明によれば、静電チャックの吸着面が変形して被吸着物の厚さを吸収することで、被吸着物の全面が静電チャックの吸着面に接触し、被吸着物の個体差によらない一定の吸着力を発生することができる。また、誘電層を特にポリエステルで製作した場合、ポリイミド等を使用した静電チャックと比較して強い吸着力を発生することができ、静電チャックの動作電圧を低下させることが可能であり、これにより静電チャックの放電を予防することができる。   According to the present invention, the adsorption surface of the electrostatic chuck is deformed to absorb the thickness of the object to be adsorbed, so that the entire surface of the object to be adsorbed contacts the adsorption surface of the electrostatic chuck, and the individual difference of the object to be adsorbed It is possible to generate a constant adsorption force that does not depend on the condition. In addition, when the dielectric layer is made of polyester in particular, it can generate a stronger attracting force than an electrostatic chuck using polyimide or the like, and can reduce the operating voltage of the electrostatic chuck. Thus, discharge of the electrostatic chuck can be prevented.

図１に、本発明による静電チャック１０を模式的に示す。この静電チャック１０は双極タイプであり、誘電層１２、２つの電極１４ａ、１４ｂ、弾性層１６を含む。誘電層１２の吸着面２２と弾性層１６との間に電極１４ａ、１４ｂが位置する。   FIG. 1 schematically shows an electrostatic chuck 10 according to the present invention. The electrostatic chuck 10 is of a bipolar type and includes a dielectric layer 12, two electrodes 14 a and 14 b, and an elastic layer 16. Electrodes 14 a and 14 b are located between the adsorption surface 22 of the dielectric layer 12 and the elastic layer 16.

誘電層１２は、変形可能な誘電材料、例えばポリエステル、ポリイミドなどの有機樹脂材料などで製作することができる。吸着に寄与するクーロン力は誘電層の比誘電率に比例するので、誘電層の比誘電率が大きければ大きいほど静電チャックの吸着力が増大し、より低電圧の印加で大きな吸着力を得ることができる。印加電圧の低下は、静電チャックの放電の予防と、デバイスやセルの高電界や静電気などによる破壊防止の観点からも有利である。一般的には、誘電層材料の比誘電率は２以上が好ましく、このような材料の例としてはポリエステルを挙げることができる。   The dielectric layer 12 can be made of a deformable dielectric material, for example, an organic resin material such as polyester or polyimide. Since the Coulomb force that contributes to adsorption is proportional to the relative dielectric constant of the dielectric layer, the larger the relative dielectric constant of the dielectric layer, the greater the adsorption force of the electrostatic chuck. be able to. The decrease in the applied voltage is advantageous from the viewpoint of preventing discharge of the electrostatic chuck and preventing breakdown of the device or cell due to a high electric field or static electricity. In general, the relative dielectric constant of the dielectric layer material is preferably 2 or more, and examples of such a material include polyester.

誘電層１２は、厚さのばらつきにより表面に凹凸のあるガラス基板などの被吸着物（図示せず）を吸着するために、被吸着物の表面凹凸に追随して変形することが必要である。従って、誘電層１２は、この変形を可能にする程度の厚さであるべきである。一般的には、使用する材料に依存するとは言え、誘電層の厚みは２０〜２５０μｍ程度でよく、より好ましくは５０〜１００μｍ、特に好ましくは７５μｍ程度である。   The dielectric layer 12 needs to be deformed following the surface irregularities of the object to be adsorbed in order to adsorb an object to be adsorbed (not shown) such as a glass substrate having an uneven surface due to thickness variations. . Therefore, the dielectric layer 12 should be thick enough to allow this deformation. In general, the thickness of the dielectric layer may be about 20 to 250 μm, more preferably about 50 to 100 μm, and particularly preferably about 75 μm, although it depends on the material used.

電極１４ａ、１４ｂは、薄い導体材料、例えば銅箔などで製作することができる。電極１４ａ、１４ｂの厚さは５μｍ程度でよい。電極１４ａ、１４ｂはまた、通常の静電チャックで用いられるのと同様の給電部２０ａ、２０ｂに接続することができる。   The electrodes 14a and 14b can be made of a thin conductive material such as copper foil. The thickness of the electrodes 14a and 14b may be about 5 μm. The electrodes 14a and 14b can also be connected to power supply units 20a and 20b similar to those used in ordinary electrostatic chucks.

弾性層１６は、シリコーンゴムなどの一般的な弾性材料で製作することができ、それ自身が弾性変形することにより、誘電層１２が被吸着物の凹凸のある表面形状に追随して変形するのを可能にするためのものである。この目的のために、弾性層１６は、ショアーＡ硬度が５５以上の弾性材料で製作するのが好ましく、例えば、上に挙げたシリコーンゴムを始めとして、天然ゴム、合成ゴム、ウレタン等の材料を用いることができる。また、その厚さは２〜１０ｍｍ程度が好ましく、より好ましい厚さは３〜５ｍｍである。場合によっては、例えばスプリングで形成した弾性層を用いてもよい。   The elastic layer 16 can be made of a general elastic material such as silicone rubber. When the elastic layer 16 itself elastically deforms, the dielectric layer 12 deforms following the uneven surface shape of the object to be adsorbed. It is for making possible. For this purpose, the elastic layer 16 is preferably made of an elastic material having a Shore A hardness of 55 or more. For example, materials such as the above-mentioned silicone rubber, natural rubber, synthetic rubber, and urethane can be used. Can be used. The thickness is preferably about 2 to 10 mm, and more preferably 3 to 5 mm. In some cases, for example, an elastic layer formed of a spring may be used.

弾性層１６の背後（誘電層１２から遠い側）に、架台１８を設けることができる。架台１８は、通常の静電チャックで用いられるのと同様でよい。例えば、アルミニウム合金製の架台を使用することができる。   A gantry 18 can be provided behind the elastic layer 16 (on the side far from the dielectric layer 12). The gantry 18 may be the same as that used in a normal electrostatic chuck. For example, an aluminum alloy mount can be used.

図１に示した本発明の静電チャック１０は、例えば次のようにして製造することができる。架台１８の上に厚さ５ｍｍのシリコーンゴムシートで弾性層１６を形成し、その上にシリコーン接着剤で厚さ５μｍの銅箔（給電部２０への接続配線付き）を貼付して電極１４ａ、１４ｂを作製する。次いで、電極１４ａ、１４ｂの上に厚さ７５μｍのポリエステルフィルムを接着剤（シリコン系、アクリル系など）で固定して誘電層１２を形成し、静電チャック１０を完成する。誘電層１２の下の電極１４ａ、１４ｂは誘電層１２に比べて薄いので、形成した誘電層１２の吸着面２２は均さなくてもよい。   The electrostatic chuck 10 of the present invention shown in FIG. 1 can be manufactured, for example, as follows. The elastic layer 16 is formed of a 5 mm thick silicone rubber sheet on the gantry 18, and a 5 μm thick copper foil (with connection wiring to the power feeding unit 20) is pasted thereon with a silicone adhesive, and the electrodes 14 a, 14b is produced. Next, a 75 μm thick polyester film is fixed on the electrodes 14 a and 14 b with an adhesive (silicon-based, acrylic-based, etc.) to form the dielectric layer 12, thereby completing the electrostatic chuck 10. Since the electrodes 14a and 14b under the dielectric layer 12 are thinner than the dielectric layer 12, the adsorption surface 22 of the formed dielectric layer 12 may not be uniform.

本発明の静電チャックは、任意の大きさで製造することができる。とは言え、一般的には、製作上やメンテナンスの容易さなどの理由から、吸着面が２５０×２５０ｍｍ程度となるようなものが好ましい。このような小型の静電チャックをユニットとして組み合わせることにより、１台の大型静電チャック装置を構成することができる。この場合、ガラス基板等の被吸着物の更なる大型化に対しても、組み合わせの変更等により容易に対応できる。また、それぞれの静電チャックユニットは独立しているため、故障時にもユニットの交換で対処できる。   The electrostatic chuck of the present invention can be manufactured in any size. However, in general, it is preferable that the suction surface is about 250 × 250 mm for reasons such as manufacturing and ease of maintenance. By combining such a small electrostatic chuck as a unit, one large electrostatic chuck device can be configured. In this case, it is possible to easily cope with a further increase in the size of an object to be adsorbed such as a glass substrate by changing the combination. In addition, since each electrostatic chuck unit is independent, it is possible to cope with a failure by replacing the unit.

本発明の静電チャックは、図２に示したように単一の電極１４’を含む単極タイプでもよい。この図の静電チャック１０’は、単一の電極１４’を用いることと、正の電圧を印加する給電部２０’のみに接続されること以外は、図１を参照して説明した静電チャック１０と同様の構成でよい。この単極タイプの静電チャックにより吸着を行う際には、被吸着物（図示せず）に負の電圧が印加される。   The electrostatic chuck of the present invention may be of a unipolar type including a single electrode 14 'as shown in FIG. The electrostatic chuck 10 ′ in this figure is the same as the electrostatic chuck described with reference to FIG. 1 except that it uses a single electrode 14 ′ and is connected only to a power supply unit 20 ′ that applies a positive voltage. A configuration similar to that of the chuck 10 may be used. When suction is performed by this single-pole type electrostatic chuck, a negative voltage is applied to an object to be attracted (not shown).

図３に、図１の双極タイプの本発明の静電チャック１０が表面の凹凸の度合が大きいガラス基板３０を吸着保持したところを模式的に示す。誘電層１２は、背後の弾性層１６の弾性変形により、ガラス基板３０の表面の凹凸に追随して変形し、ガラス基板３０の表面全体と接触することができ、それによりガラス基板を確実に吸着保持することができる。   FIG. 3 schematically shows that the bipolar type electrostatic chuck 10 of the present invention shown in FIG. 1 sucks and holds the glass substrate 30 having a large degree of surface irregularities. The dielectric layer 12 can be deformed following the irregularities on the surface of the glass substrate 30 due to the elastic deformation of the elastic layer 16 behind, and can contact the entire surface of the glass substrate 30, thereby reliably adsorbing the glass substrate. Can be held.

誘電層の材料としてポリエステル、ポリイミド、塩化ビニル、ポリエチレン及びフッ素ゴムフィルム（７５μｍ厚）のうちの１つを使用する、吸着面が２５０×２５０ｍｍの双極タイプの５種類の静電チャックを作製した。いずれの静電チャックでも、電極は２４０×２４０ｍｍ、厚さ５μｍの銅箔で作製し、弾性層は厚さ５ｍｍ、ショアーＡ硬度９０のシリコーンゴムシートで作製した。これらの静電チャックのそれぞれに印加する電圧を変化させて、静電チャックが示す吸着力を測定した結果を図４に示す。ポリエステルの誘電層を有する静電チャックが、印加電圧にほぼ比例して増加する吸着力を示すこと、特に３０００Ｖを超える印加電圧で２ｇｆ／ｃｍ2（約０．０２Ｎ／ｃｍ2）以上の大きな吸着力を示すことが分かる。 Five types of electrostatic chucks of a bipolar type with an adsorption surface of 250 × 250 mm were prepared using one of polyester, polyimide, vinyl chloride, polyethylene, and fluororubber film (75 μm thick) as the material of the dielectric layer. In any electrostatic chuck, the electrode was made of 240 × 240 mm and a copper foil having a thickness of 5 μm, and the elastic layer was made of a silicone rubber sheet having a thickness of 5 mm and a Shore A hardness of 90. FIG. 4 shows the result of measuring the attractive force exhibited by the electrostatic chuck while changing the voltage applied to each of these electrostatic chucks. The electrostatic chuck having a dielectric layer of polyester exhibits an adsorption force that increases almost in proportion to the applied voltage, in particular, a large adsorption of 2 gf / cm 2 (about 0.02 N / cm 2 ) or more at an applied voltage exceeding 3000 V. You can see that it shows power.

ここでは被吸着物をガラス基板として説明してはいるが、本発明の静電チャックを使用することができる被吸着物はそれには限定されない。例えば、本発明の静電チャックはシリコン基板などの吸着保持に利用することも可能である。   Although the object to be adsorbed is described as a glass substrate here, the object to be adsorbed that can use the electrostatic chuck of the present invention is not limited thereto. For example, the electrostatic chuck of the present invention can also be used for attracting and holding a silicon substrate or the like.

本発明による双極タイプの静電チャックを説明する模式図である。It is a schematic diagram explaining the bipolar type electrostatic chuck by this invention. 本発明による単極タイプの静電チャックを説明する模式図である。It is a schematic diagram explaining the single pole type electrostatic chuck by this invention. 本発明の静電チャックによる表面の凹凸の度合が大きいガラス基板の吸着保持を説明する模式図である。It is a schematic diagram explaining the adsorption | suction holding | maintenance of the glass substrate with the large degree of the unevenness | corrugation of the surface by the electrostatic chuck of this invention. 本発明による種々の静電チャックの吸着力を示すグラフである。It is a graph which shows the attractive_force | adsorptive_power of the various electrostatic chucks by this invention. 従来の静電チャックを説明する模式図である。It is a schematic diagram explaining the conventional electrostatic chuck. 従来の静電チャックによる表面の凹凸の度合が大きいガラス基板の吸着保持を説明する模式図である。It is a schematic diagram explaining the adsorption | suction holding | maintenance of the glass substrate with the large degree of the unevenness | corrugation of the surface by the conventional electrostatic chuck.

符号の説明Explanation of symbols

１０、１０’ 静電チャック
１２ 誘電層
１４ａ、１４ｂ、１４’ 電極
１６ 弾性層
１８ 架台
２０ａ、２０ｂ、２０’ 給電部
２２ 吸着面 10, 10 'Electrostatic chuck 12 Dielectric layer 14a, 14b, 14' Electrode 16 Elastic layer 18 Base 20a, 20b, 20 'Feeding part 22 Adsorption surface

Claims (7)

被吸着物を吸着する吸着面を有する誘電層、誘電層の変形を可能にする弾性層、及び誘電層の吸着面と弾性層との間に位置する、吸着に必要な静電荷を発生させるための電極を含むことを特徴とする静電チャック。   To generate a dielectric layer having an adsorption surface that adsorbs an object to be adsorbed, an elastic layer that enables deformation of the dielectric layer, and an electrostatic charge that is located between the adsorption surface of the dielectric layer and the elastic layer and that is necessary for adsorption An electrostatic chuck comprising: an electrode. 誘電層が有機樹脂材料製である、請求項１記載の静電チャック。   The electrostatic chuck according to claim 1, wherein the dielectric layer is made of an organic resin material. 有機樹脂材料の比誘電率が２以上である、請求項２記載の静電チャック。   The electrostatic chuck according to claim 2, wherein the organic resin material has a relative dielectric constant of 2 or more. 有機樹脂材料がポリエステルである、請求項３記載の静電チャック。   The electrostatic chuck according to claim 3, wherein the organic resin material is polyester. 弾性層の材料がシリコーンゴム、天然ゴム、合成ゴム、又はウレタンである、請求項１から４までのいずれか１つに記載の静電チャック。   The electrostatic chuck according to any one of claims 1 to 4, wherein the material of the elastic layer is silicone rubber, natural rubber, synthetic rubber, or urethane. 弾性層材料のショアーＡ硬度が５５以上である、請求項５記載の静電チャック。   The electrostatic chuck according to claim 5, wherein the elastic layer material has a Shore A hardness of 55 or more. 弾性層の比抵抗が１０13Ω・ｃｍ以下である、請求項１から６までのいずれか１つに記載の静電チャック。 The electrostatic chuck according to claim 1, wherein the elastic layer has a specific resistance of 10 13 Ω · cm or less.
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Publication number Priority date Publication date Assignee Title
JP2010182866A (en) * 2009-02-05 2010-08-19 Nikon Corp Electrostatic attraction holding device, aligner, exposure method, and method of manufacturing device
JP2016058748A (en) * 2010-01-29 2016-04-21 住友大阪セメント株式会社 Electrostatic chuck device
JP2018518844A (en) * 2015-06-11 2018-07-12 フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー．ファオ Apparatus having a film for electrostatically coupling a substrate to a substrate carrier
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JP2017174938A (en) * 2016-03-23 2017-09-28 住友大阪セメント株式会社 Electrostatic chuck device and manufacturing method thereof
JP2017215867A (en) * 2016-06-01 2017-12-07 株式会社リコー Input element and input device
KR20200092241A (en) * 2019-01-24 2020-08-03 김순훈 Electrostatic chuck
KR102292501B1 (en) * 2019-01-24 2021-08-23 김순훈 Electrostatic chuck

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