JP2007290078A - Grinding method of substrate - Google Patents

Grinding method of substrate Download PDF

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JP2007290078A
JP2007290078A JP2006121112A JP2006121112A JP2007290078A JP 2007290078 A JP2007290078 A JP 2007290078A JP 2006121112 A JP2006121112 A JP 2006121112A JP 2006121112 A JP2006121112 A JP 2006121112A JP 2007290078 A JP2007290078 A JP 2007290078A
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substrate
grinding
dummy material
grindstone
glass substrate
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JP5003015B2 (en
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Takashi Taniguchi
隆 谷口
Shuji Takato
修二 高東
Mutsumi Asano
睦己 浅野
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Tosoh Corp
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Tosoh Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for grinding the surface of a non-circular shaped substrate with excellent flatness. <P>SOLUTION: In the grinding method for the substrate, the grinding wheel is contacted with the surface of the substrate while rotating the substrate 3 and the grinding wheel 2. The non-circular shaped substrate 3 is used as the substrate, a dummy material 4 is disposed on the peripheral edge part of the non-circular shaped substrate, and the dummy material is disposed so that the grinding wheel always maintains a constant contact area with a surface formed by the non-circular shaped substrate and the dummy material. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

本発明は、基板の研削方法、特にガラス基板等の基板表面の研削方法に関する。   The present invention relates to a method for grinding a substrate, particularly a method for grinding a surface of a substrate such as a glass substrate.

円形ガラス基板の表面研削加工には、一般に回転テーブル型の立軸平面研削装置が用いられている。回転テーブル型の立軸平面研削装置の一例につき、研削にかかる部分を側面から見たときの模式図を図1に、上面から見たときの模式図を図2に示す。このような研削装置は、回転テーブル1とカップ型の研削砥石2を有しており、研削対象である円形ガラス基板3は回転テーブル1上の中央部に固定される。   A rotary table type vertical shaft surface grinding apparatus is generally used for surface grinding of a circular glass substrate. FIG. 1 shows a schematic diagram of a rotary table type vertical shaft surface grinding apparatus as seen from the side, and FIG. 2 shows a schematic diagram of the rotary table type as viewed from the top. Such a grinding apparatus has a rotary table 1 and a cup-type grinding wheel 2, and a circular glass substrate 3 to be ground is fixed to a central portion on the rotary table 1.

研削を行うカップ型研削砥石2は通常、カップ型砥石の円周状の砥石部分が、回転テーブルの中心を通るように位置合わせされる。円形ガラス基板を固定した後、回転テーブル1を回転させながら、回転テーブル1の上方に位置するカップ型の研削砥石2を、回転テーブルの回転方向とは逆方向に回転させながら下降させ、研削砥石2をガラス基板3表面に接触させることで、ガラス基板表面の研削加工を行う。   The cup-type grinding wheel 2 that performs grinding is usually aligned so that the circumferential grinding wheel portion of the cup-type grinding wheel passes through the center of the rotary table. After fixing the circular glass substrate, while rotating the rotary table 1, the cup-type grinding wheel 2 positioned above the rotary table 1 is lowered while being rotated in the direction opposite to the rotation direction of the rotary table 1. The glass substrate surface is ground by bringing 2 into contact with the glass substrate 3 surface.

研削対象であるガラス基板が円形形状の場合は、図3に示すように、研削時におけるガラス基板と砥石との接触部分5の面積は、ガラス基板の回転状態にかかわらず、常に一定であり、研削抵抗の変化がないため、図4に示すように、研削後のガラス基板の表面形状には、回転テーブルの中心を中心とした周方向の形状分布がなく、平坦に研削加工がなされる。   When the glass substrate to be ground is circular, as shown in FIG. 3, the area of the contact portion 5 between the glass substrate and the grindstone at the time of grinding is always constant regardless of the rotation state of the glass substrate, Since there is no change in grinding resistance, as shown in FIG. 4, the surface shape of the glass substrate after grinding does not have a shape distribution in the circumferential direction around the center of the rotary table, and is ground flat.

しかし、研削対象である基板が非円形形状の場合、たとえば正方形の場合は、図5に示すように、研削時における基板と砥石との接触面積が、ガラス基板の回転に伴い変化するため、これによる研削抵抗の変化により、図6に示すように、研削後の基板の表面形状には、回転テーブルの中心を基点とした周方向の形状分布が発生してしまう。   However, when the substrate to be ground has a non-circular shape, for example, when it is square, the contact area between the substrate and the grindstone during grinding changes as the glass substrate rotates as shown in FIG. Due to the change in the grinding resistance due to, as shown in FIG. 6, the surface shape of the substrate after grinding generates a circumferential shape distribution starting from the center of the rotary table.

さらに、研削対象である基板が長方形の場合、図7に示すように、研削時における基板と砥石の接触面積が、基板の回転に伴い正方形の場合よりもさらに大きく変化するため、図8に示すように、研削後のガラス基板の表面形状には、回転テーブルの中心を基点とした周方向の形状分布が、正方形の場合よりもさらに大きく発生する。   Furthermore, when the substrate to be ground is rectangular, as shown in FIG. 7, the contact area between the substrate and the grindstone at the time of grinding changes more greatly than in the case of a square as the substrate rotates. Thus, in the surface shape of the glass substrate after grinding, the shape distribution in the circumferential direction with the center of the rotary table as a base point is generated more greatly than in the case of a square shape.

このように研削対象である基板が非円形形状の場合、その表面を平坦に研削加工ができないという問題があった。   As described above, when the substrate to be ground has a non-circular shape, there is a problem that the surface cannot be ground flat.

このような問題に対し、研削時におけるガラス基板と砥石との接触面積の変化に応じて、砥石の単位時間あたりの下降量である切込量を制御することにより、平坦にガラス基板を研削する方法および装置が提案されている。(例えば、特許文献1参照)
しかしながら、当該方法を実施するためには、研削制御機構の導入や研削装置の改造が必要であり、また、少量のガラス基板を研削する場合や、サイズの異なる多種のガラス基板を研削するため、回転テーブルのサイズが異なる複数の研削装置を使用している場合には、装置が複雑化するなど、更なる改良が望まれていた。
For such problems, the glass substrate is ground flat by controlling the cutting amount, which is the amount of descent of the grindstone per unit time, according to the change in the contact area between the glass substrate and the grindstone during grinding. Methods and apparatus have been proposed. (For example, see Patent Document 1)
However, in order to carry out the method, it is necessary to introduce a grinding control mechanism or to modify the grinding apparatus, and when grinding a small amount of glass substrate or grinding various types of glass substrates of different sizes, When a plurality of grinding apparatuses having different rotary table sizes are used, further improvements have been desired, for example, the apparatus becomes complicated.

本発明の目的は、非円形形状の基板の表面を、簡便に、平坦に研削する方法を提供することにある。   An object of the present invention is to provide a method for simply and flatly grinding a surface of a non-circular substrate.

特開平9−290366号公報Japanese Patent Laid-Open No. 9-290366

本発明者等は上述のような現状に鑑み、鋭意検討を重ねた結果、基板と砥石とを回転させながら、基板表面に砥石を接触させ、基板の表面を研削する基板の研削方法において、回転時に砥石が基板またはダミー材に接触する面積が一定になるよう、非円形である基板の周囲にダミー材を配置し、ダミー材の表面と一緒に基板の表面を研削することにより、平坦性よく非円形基板の表面を研削加工できることを見出し、本発明を完成するに至った。   As a result of intensive studies in view of the above situation, the present inventors have rotated the substrate and grinding wheel while rotating the substrate and bringing the grinding wheel into contact with the substrate surface and grinding the substrate surface. Place a dummy material around a non-circular substrate and grind the surface of the substrate together with the surface of the dummy material so that the area where the grindstone contacts the substrate or the dummy material is constant. The present inventors have found that the surface of a non-circular substrate can be ground and completed the present invention.

すなわち本発明は、基板と砥石とを回転させながら、基板表面に砥石を接触させてなる基板の研削方法において、基板として非円形基板を用い、非円形基板の周縁部にはダミー材を配置し、このダミー材は、砥石が非円形基板およびダミー材から形成される面と常に一定の接触面積を維持するよう配置されていることを特徴とする基板の研削方法に関する。   That is, the present invention uses a non-circular substrate as a substrate in a substrate grinding method in which a grindstone is brought into contact with the substrate surface while rotating the substrate and the grindstone, and a dummy material is disposed on the peripheral portion of the non-circular substrate. The dummy material relates to a method for grinding a substrate, wherein the grindstone is arranged so as to always maintain a constant contact area with a surface formed from the non-circular substrate and the dummy material.

以下、本発明を詳細に説明する。   Hereinafter, the present invention will be described in detail.

本発明の研削方法には、前記したような回転テーブル型の立軸平面研削装置が使用できる。但し、図9に示すように、回転テーブル1上には研削対象である非円形状基板3およびダミー材4が固定され、研削を行うカップ型砥石2は通常、カップ型砥石の円周状の砥石部分が、回転テーブル1の中心を通るように位置合わせされる。   In the grinding method of the present invention, a rotary table type vertical axis surface grinding apparatus as described above can be used. However, as shown in FIG. 9, the non-circular substrate 3 and the dummy material 4 to be ground are fixed on the rotary table 1, and the cup-type grindstone 2 for grinding is usually a circumferential shape of a cup-type grindstone. The grinding wheel portion is aligned so as to pass through the center of the rotary table 1.

基板の材質としては、一般に基板材料として用いられているものであれば特に制限なく使用可能であり、例えば、石英ガラス等のガラスやセラミックス、シリコン等を例示することができる。研削対象として、基板が石英ガラス等の材質である場合、砥石には、メタルボンドダイヤモンド砥石、レジンボンドダイヤモンド砥石などが一般に使用され、砥石の番手は要求される基板の表面粗さに応じて適宜決定することができる。   As a material of the substrate, any material that is generally used as a substrate material can be used without particular limitation. Examples thereof include glass such as quartz glass, ceramics, silicon, and the like. When the substrate is made of a material such as quartz glass as a grinding object, a metal bond diamond grindstone, a resin bond diamond grindstone or the like is generally used as the grindstone, and the grindstone count is appropriately determined according to the required surface roughness of the substrate. Can be determined.

研削対象として非円形形状の基板を回転テーブルの中央部に固定した場合、研削時に砥石が基板に接触する面積は、基板の回転に伴い変化し、一定にならないのは前記したとおりである。このため、研削対象が非円形基板である場合には、基板の周縁部にダミー材を、基板とダミー材とが、回転テーブルの中心を基点とした円形形状を形成するように配置すれば、研削時に砥石が基板およびダミー材に接触する面積は、基板の回転状態にかかわらず、常に一定になり、研削抵抗の変化が発生しなくなり、基板を平坦に研削加工できる。   As described above, when a non-circular substrate is fixed to the center of the turntable as an object to be ground, the area where the grindstone contacts the substrate during grinding changes with the rotation of the substrate and is not constant. For this reason, if the object to be ground is a non-circular substrate, a dummy material is disposed on the peripheral edge of the substrate, and the substrate and the dummy material are arranged so as to form a circular shape based on the center of the rotary table. The area where the grindstone contacts the substrate and the dummy material at the time of grinding is always constant regardless of the rotation state of the substrate, so that the grinding resistance does not change and the substrate can be ground flat.

本発明に用いることができる基板の形状としては、正方形、長方形、多角形等のほか、どのような形状のものにも適用できる。   The substrate that can be used in the present invention can be applied to any shape other than a square, a rectangle, a polygon, and the like.

本発明における基板の周縁部に配置するダミー材の配置位置については、回転時に砥石が基板およびダミー材と接触する面積が一定になるようであれば、特に制約はなく、図10に示すように、正方形の基板3であれば、基板を取り囲むようにダミー材4を配置しても構わないし、図11に示すように、半円形の基板3であれば、基板に対し、ある方向の側のみにダミー材4を配置しても構わない。   There are no particular restrictions on the position of the dummy material disposed on the peripheral edge of the substrate in the present invention, as long as the area where the grindstone contacts the substrate and the dummy material during rotation is constant, as shown in FIG. In the case of the square substrate 3, the dummy material 4 may be disposed so as to surround the substrate. As shown in FIG. 11, in the case of the semicircular substrate 3, only a certain direction side with respect to the substrate is provided. The dummy material 4 may be disposed on the surface.

また、本発明における研削対象である基板の設置枚数は、1枚でも複数枚としても構わない。複数枚の場合には図12に示すように、複数枚の基板3の周囲にダミー材4を、回転時に砥石が基板およびダミー材に接触する面積が一定になるように配置、固定すればよい。なお、複数枚の基板を設置する場合、基板どおしの接触により基板の側面に傷が入らないよう、基板と基板との間は完全に接しないないよう、間隔をもって配置した方が好ましく、基板のサイズによって異なるが、具体的には、1〜10mmが好ましい。   Further, the number of substrates to be ground in the present invention may be one or a plurality. In the case of a plurality of sheets, as shown in FIG. 12, the dummy material 4 may be arranged and fixed around the plurality of substrates 3 so that the area where the grindstone contacts the substrate and the dummy material during rotation is constant. . In addition, when installing a plurality of substrates, it is preferable to arrange them at intervals so that the side surfaces of the substrates are not damaged by contact between the substrates, so that the substrates are not completely in contact with each other, Although it differs depending on the size of the substrate, specifically, 1 to 10 mm is preferable.

更に、本発明における基板の周縁部に配置するダミー材の個数については、回転時に砥石が基板およびダミー材に接触する面積が一定になるようであれば、特に制約はなく、図13に示すように、研削する基板3に合わせた形状としたダミー材4を最小数、配置しても構わないし、各種形状の複数のダミー材を、研削する基板の形状に合わせ、組み合わせて配置しても構わない。   Furthermore, the number of dummy materials arranged on the peripheral edge of the substrate in the present invention is not particularly limited as long as the area where the grindstone contacts the substrate and the dummy material during rotation is constant, as shown in FIG. In addition, a minimum number of dummy materials 4 having a shape suitable for the substrate 3 to be ground may be disposed, or a plurality of dummy materials having various shapes may be disposed in combination according to the shape of the substrate to be ground. Absent.

本発明において、回転時に砥石が基板およびダミー材と接触する面積を一定とすることが、基板を最も平坦性よく研削加工できるが、平坦性に関し許容しうる加工精度の範囲内に応じて、回転時に砥石が基板およびダミー材と接触する面積を実質上一定とすればよい。   In the present invention, the constant contact area of the grindstone with the substrate and the dummy material during the rotation can grind the substrate with the most flatness, but the rotation can be performed within the allowable processing accuracy range for the flatness. Sometimes, the area where the grindstone contacts the substrate and the dummy material may be made substantially constant.

本発明における研削装置の回転テーブル上における、テーブル面からのダミー材表面の高さ(厚さ)は、基板表面の高さと同一または基板表面の高さより高いことが好ましい。   The height (thickness) of the dummy material surface from the table surface on the rotary table of the grinding apparatus according to the present invention is preferably the same as the substrate surface height or higher than the substrate surface height.

ダミー材表面の高さが基板表面より低い場合には、研削砥石が基板には接触するが、ダミー材には接触せず、基板表面の高さが、ダミー材表面の高さと同じになるまで、基板のみが研削されてしまう。研削後の基板の板厚に特に制限がない場合には構わないが、制限がある場合には、テーブル面からのダミー材表面の高さは、基板表面の高さと同一または基板表面の高さより高くすることが好ましい。   If the dummy material surface is lower than the substrate surface, the grinding wheel will contact the substrate, but will not contact the dummy material until the substrate surface height is the same as the dummy material surface height. Only the substrate will be ground. If there is no particular limitation on the thickness of the substrate after grinding, if there is a limitation, the height of the dummy material surface from the table surface is the same as the height of the substrate surface or the height of the substrate surface. Higher is preferred.

本発明における基板の周囲に配置するダミー材の材質は、研削対象である基板と同一のものであることが好ましいが、研削対象である基板と同等の研削抵抗、研削特性を持つ材質のものであれば、別の材質のものを用いても特に構わない。   The material of the dummy material arranged around the substrate in the present invention is preferably the same as that of the substrate to be ground, but the material having the same grinding resistance and grinding characteristics as the substrate to be ground. As long as there is a different material, it may be used.

本発明における回転テーブルへの基板およびダミー材の固定方法としては、真空吸着あるいはワックス、石膏などを使用し、直接、回転テーブルの表面に固定しても構わないし、平坦性の高い台座や基板の上に一度、基板とダミー材をワックス、石膏などを使用し固定した後、その台座または基板を回転テーブル上に真空吸着等により固定しても構わない。   As a method of fixing the substrate and the dummy material to the turntable in the present invention, vacuum adsorption or wax, gypsum, etc. may be used, and it may be fixed directly to the surface of the turntable. Once the substrate and the dummy material are fixed using wax, gypsum, etc., the pedestal or the substrate may be fixed on the rotary table by vacuum suction or the like.

本発明において、基板の周縁部にダミー材を配置する際、ダミー材の側面は基板の側面に接触しても良いが、ダミー材との接触により、基板の側面に傷が入らないよう、ダミー材と基板は接触しない程度に離すことが好ましい。   In the present invention, when the dummy material is disposed on the peripheral edge of the substrate, the side surface of the dummy material may contact the side surface of the substrate, but the dummy material is not damaged by contact with the dummy material. The material and the substrate are preferably separated so as not to contact each other.

基板とダミー材との間隔は、基板のサイズによって異なるが、1〜10mmが好ましい。   Although the space | interval of a board | substrate and a dummy material changes with sizes of a board | substrate, 1-10 mm is preferable.

本発明においては、回転時に砥石が基板およびダミー材に接触する面積が一定になるよう、非円形である基板の周縁部にダミー材を配置し、ダミー材の表面と一緒に基板の表面を研削するようにしたことにより、基板を平坦性よく研削加工することができ、円形以外の形状を有する基板を平坦性よく研削することができる。   In the present invention, a dummy material is disposed on the periphery of the non-circular substrate so that the area where the grindstone contacts the substrate and the dummy material during rotation is constant, and the surface of the substrate is ground together with the surface of the dummy material. By doing so, the substrate can be ground with good flatness, and a substrate having a shape other than a circle can be ground with good flatness.

以下に本発明の実施例について説明するが、本発明はこれら実施例に限定されるものではない。   Examples of the present invention will be described below, but the present invention is not limited to these examples.

実施例1
研削対象として、1辺の長さが200mmの正方形で、厚さ1mmの石英ガラス製の基板を用意した。このガラス基板をφ300のシリコンウエハの中心部に、ワックスを用いて固定した。次に図10に示すように、4枚の石英ガラス製の厚さ1mmのダミー材を、ガラス基板の周縁部に、シリコンウエハ全面をちょうど覆うように配置し、同様にワックスで固定した。ガラス基板とダミー材の間は1mm程度の隙間をあけた。
Example 1
As a grinding object, a quartz glass substrate having a side length of 200 mm and a thickness of 1 mm was prepared. This glass substrate was fixed to the center of a φ300 silicon wafer using wax. Next, as shown in FIG. 10, four 1 mm-thick dummy materials made of quartz glass were arranged on the periphery of the glass substrate so as to cover the entire surface of the silicon wafer, and similarly fixed with wax. A gap of about 1 mm was left between the glass substrate and the dummy material.

次にこのガラス基板とダミー材とを固定したシリコンウエハを、回転テーブル型の立軸平面研削装置のφ300の回転テーブルに、真空吸着により固定した。研削砥石としてはφ450、砥石幅5mmのカップ型のメタルボンドダイヤモンド砥石を使用し、カップ型砥石の円周状の砥石部分が、回転テーブルの中心を通るように位置合わせした。   Next, the silicon wafer on which the glass substrate and the dummy material were fixed was fixed by vacuum suction to a φ300 rotary table of a rotary table type vertical axis surface grinding apparatus. A cup-type metal bond diamond grindstone having a diameter of 450 mm and a grindstone width of 5 mm was used as the grinding wheel, and the circumferential grindstone portion of the cup-type grindstone was aligned so as to pass through the center of the rotary table.

次に研削装置の回転テーブルを120rpm、カップ型砥石を回転テーブルとは反対方向に700rpmで回転させ、カップ型砥石を下降させ、砥石がガラス基板とダミー材の表面に接触した後、研削面に研削液として水をかけながら、砥石を下降速度6μm/分で60μm下降させ、ガラス基板およびダミー材の表面を研削した。   Next, the rotary table of the grinding device is rotated at 120 rpm, the cup-type grindstone is rotated at 700 rpm in the opposite direction to the rotary table, the cup-type grindstone is lowered, and the grindstone comes into contact with the glass substrate and the surface of the dummy material. While applying water as a grinding liquid, the grindstone was lowered by 60 μm at a descending speed of 6 μm / min, and the surfaces of the glass substrate and the dummy material were ground.

研削が終了した後のガラス基板の表面形状を、触針式の表面形状測定器により測定したところ、図14に示すように、基板の中央を中心とした周方向の形状分布は0.5μm程度であり、図4に示した、φ300の円形形状のガラス基板を同様に研削した場合の、基板の表面形状の形状分布と同様、非常に良好であった。   When the surface shape of the glass substrate after grinding was measured with a stylus type surface shape measuring instrument, as shown in FIG. 14, the shape distribution in the circumferential direction centered on the center of the substrate was about 0.5 μm. As shown in FIG. 4, when the circular glass substrate of φ300 shown in FIG. 4 was ground in the same manner, the shape distribution of the surface shape of the substrate was very good.

実施例2
研削対象として、辺の長さが260mm×150mmの長方形で、厚さ1mmの石英ガラス製の基板を用意した。このガラス基板をφ300のシリコンウエハの中央に、ワックスを用いて固定した。次に図15に示すように、4枚の石英ガラス製の厚さ1mmのダミー材を、ガラス基板の周囲に、シリコンウエハ全面をちょうど覆うように配置し、同様にワックスで固定した。ガラス基板とダミー材の間は5mmの隙間をあけた。
Example 2
As a grinding object, a quartz glass substrate having a side length of 260 mm × 150 mm and a thickness of 1 mm was prepared. This glass substrate was fixed to the center of a φ300 silicon wafer using wax. Next, as shown in FIG. 15, four 1 mm-thick dummy materials made of quartz glass were placed around the glass substrate so as to cover the entire surface of the silicon wafer, and similarly fixed with wax. A gap of 5 mm was left between the glass substrate and the dummy material.

次にこのガラス基板とダミー材を固定したシリコンウエハを、実施例1と同じ装置に同様に固定し、実施例1と同様の条件でガラス基板およびダミー材の表面を研削した。   Next, the silicon wafer on which the glass substrate and the dummy material were fixed was similarly fixed to the same apparatus as in Example 1, and the surfaces of the glass substrate and the dummy material were ground under the same conditions as in Example 1.

研削が終了した後のガラス基板の表面形状を、触針式の表面形状測定器により測定したところ、図16に示すように、基板の中央を中心とした周方向の形状分布は0.5μm程度であり、非常に良好であった。   When the surface shape of the glass substrate after grinding was measured by a stylus type surface shape measuring instrument, as shown in FIG. 16, the shape distribution in the circumferential direction centered on the center of the substrate was about 0.5 μm. It was very good.

比較例1
研削対象として、1辺の長さが200mmの正方形で、厚さ1mmの石英ガラス製の基板を用意した。このガラス基板をφ300のシリコンウエハの中央に、ワックスを用いて固定した。
Comparative Example 1
As a grinding object, a quartz glass substrate having a side length of 200 mm and a thickness of 1 mm was prepared. This glass substrate was fixed to the center of a φ300 silicon wafer using wax.

次にこのガラス基板を固定したシリコンウエハを、実施例1と同じ装置に同様に固定し、実施例1と同様の条件でガラス基板の表面を研削した。
研削が終了した後のガラス基板の表面形状を、触針式の表面形状測定器により測定したところ、図6に示すように、基板の中央を中心とした周方向の形状分布は1.2μm程であった。
Next, the silicon wafer on which the glass substrate was fixed was similarly fixed to the same apparatus as in Example 1, and the surface of the glass substrate was ground under the same conditions as in Example 1.
When the surface shape of the glass substrate after grinding was measured with a stylus type surface shape measuring instrument, as shown in FIG. 6, the shape distribution in the circumferential direction centered on the center of the substrate was about 1.2 μm. Met.

比較例2
研削対象として、辺の長さが260mm×150mmの長方形で、厚さ1mmの石英ガラス製の基板を用意した。このガラス基板をφ300のシリコンウエハの中央に、ワックスを用いて固定した。
Comparative Example 2
As a grinding object, a quartz glass substrate having a side length of 260 mm × 150 mm and a thickness of 1 mm was prepared. This glass substrate was fixed to the center of a φ300 silicon wafer using wax.

次にこのガラス基板を固定したシリコンウエハを、実施例1と同じ装置に同様に固定し、実施例1と同様の条件でガラス基板の表面を研削した。
研削が終了した後のガラス基板の表面形状を、触針式の表面形状測定器により測定したところ、図8に示すように、基板の中央を中心とした周方向の形状分布は3μm程であった。
Next, the silicon wafer on which the glass substrate was fixed was similarly fixed to the same apparatus as in Example 1, and the surface of the glass substrate was ground under the same conditions as in Example 1.
When the surface shape of the glass substrate after grinding was measured with a stylus type surface shape measuring instrument, as shown in FIG. 8, the shape distribution in the circumferential direction centered on the center of the substrate was about 3 μm. It was.

従来の回転テーブル型の立軸平面研削装置を側面から見た模式図である。It is the schematic diagram which looked at the conventional rotary table type vertical axis surface grinding apparatus from the side. 従来の回転テーブル型の立軸平面研削装置を上面から見た模式図である。It is the schematic diagram which looked at the conventional rotary table type vertical axis surface grinding apparatus from the upper surface. 従来法における、円形形状の基板を研削した場合の、テーブル回転時の砥石と基板の接触面積を示す図である。It is a figure which shows the contact area of a grindstone and a board | substrate at the time of table rotation at the time of grinding the circular shaped board | substrate in the conventional method. 従来法における、円形形状の基板の研削面の形状を示す図である。It is a figure which shows the shape of the grinding surface of a circular-shaped board | substrate in the conventional method. 従来法における、正方形形状の基板を研削した場合の、テーブル回転時の砥石と基板との接触面積を示す図である。It is a figure which shows the contact area of the grindstone and a board | substrate at the time of table rotation at the time of grinding a square-shaped board | substrate in the conventional method. 従来法における、正方形形状の基板の研削面の形状を示す図である。It is a figure which shows the shape of the grinding surface of a square-shaped board | substrate in the conventional method. 従来法における、長方形形状の基板を研削した場合の、テーブル回転時の砥石と基板との接触面積を示す図である。It is a figure which shows the contact area of the grindstone and a board | substrate at the time of table rotation at the time of grinding the rectangular-shaped board | substrate in the conventional method. 従来法における、長方形形状の基板の研削面の形状を示す図である。It is a figure which shows the shape of the grinding surface of a rectangular-shaped board | substrate in the conventional method. 本発明の方法を実施可能な回転テーブル型の立軸平面研削装置を上面から見た模式図である。It is the schematic diagram which looked at the rotary table type | formula vertical surface grinding apparatus which can implement the method of this invention from the upper surface. 正方形形状の基板の周囲にダミー材を配置した例を示す図である。It is a figure which shows the example which has arrange | positioned the dummy material around the square-shaped board | substrate. 半円形形状のガラス基板の片側にダミー材を配置した例を示す図である。It is a figure which shows the example which has arrange | positioned the dummy material to the one side of the glass substrate of a semicircle shape. 複数のガラス基板の周囲にダミー材を配置した例を示す図である。It is a figure which shows the example which has arrange | positioned the dummy material around the some glass substrate. ガラス基板の周囲に1個のダミー材を配置した例を示す図である。It is a figure which shows the example which has arrange | positioned one dummy material around the glass substrate. 本発明の方法における、正方形形状のガラス基板の研削面の形状を示す図である。It is a figure which shows the shape of the grinding surface of a square-shaped glass substrate in the method of this invention. 長方形形状のガラス基板の周囲にダミー材を配置した例を示す図である。It is a figure which shows the example which has arrange | positioned the dummy material around the rectangular-shaped glass substrate. 本発明の方法における、長方形形状のガラス基板の研削面の形状を示す図である。It is a figure which shows the shape of the grinding surface of a rectangular-shaped glass substrate in the method of this invention.

符号の説明Explanation of symbols

1 回転テーブル
2 カップ型砥石
3 基板
4 ダミー材
5 基板と砥石との接触部分
DESCRIPTION OF SYMBOLS 1 Rotary table 2 Cup type grindstone 3 Substrate 4 Dummy material 5 Contact part of a substrate and a grindstone

Claims (4)

基板と砥石とを回転させながら、基板表面に砥石を接触させてなる基板の研削方法において、基板として非円形基板を用い、非円形基板の周縁部にはダミー材を配置し、このダミー材は、砥石が非円形基板およびダミー材から形成される面と常に一定の接触面積を維持するよう配置されていることを特徴とする基板の研削方法。 In a method for grinding a substrate in which a grindstone is brought into contact with the substrate surface while rotating the substrate and the grindstone, a non-circular substrate is used as the substrate, and a dummy material is disposed on the peripheral portion of the non-circular substrate. A grinding method for a substrate, wherein the grinding stone is arranged so as to always maintain a constant contact area with a surface formed from a non-circular substrate and a dummy material. ダミー材の材質が、基板と同じ材質であることを特徴とする請求項1記載の基板の研削方法。 2. The substrate grinding method according to claim 1, wherein the dummy material is the same material as the substrate. 基板の材質が石英ガラスであることを特徴とする請求項1記載の基板の研削方法。 2. The substrate grinding method according to claim 1, wherein the material of the substrate is quartz glass. ダミー材の材質が石英ガラスであることを特徴とする請求項2または3記載の基板の研削方法。
4. The substrate grinding method according to claim 2, wherein the dummy material is quartz glass.
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