JP2007287939A - 研磨方法、及び研磨装置 - Google Patents
研磨方法、及び研磨装置 Download PDFInfo
- Publication number
- JP2007287939A JP2007287939A JP2006113813A JP2006113813A JP2007287939A JP 2007287939 A JP2007287939 A JP 2007287939A JP 2006113813 A JP2006113813 A JP 2006113813A JP 2006113813 A JP2006113813 A JP 2006113813A JP 2007287939 A JP2007287939 A JP 2007287939A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- gas
- polished
- substrate
- gas suction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 262
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000001514 detection method Methods 0.000 claims abstract description 60
- 238000012544 monitoring process Methods 0.000 claims abstract description 7
- 230000008034 disappearance Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 abstract description 218
- 239000000758 substrate Substances 0.000 abstract description 63
- 239000000126 substance Substances 0.000 abstract description 12
- 239000002341 toxic gas Substances 0.000 abstract description 6
- 238000007517 polishing process Methods 0.000 abstract description 4
- 230000000994 depressogenic effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 42
- 238000004140 cleaning Methods 0.000 description 25
- 239000002002 slurry Substances 0.000 description 25
- 230000035945 sensitivity Effects 0.000 description 23
- 238000012546 transfer Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 7
- 239000011630 iodine Substances 0.000 description 7
- 229910052740 iodine Inorganic materials 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 239000003595 mist Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000007726 management method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- -1 ammonium ions Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
- B24B49/045—Specially adapted gauging instruments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006113813A JP2007287939A (ja) | 2006-04-17 | 2006-04-17 | 研磨方法、及び研磨装置 |
| US11/785,190 US20070243797A1 (en) | 2006-04-17 | 2007-04-16 | Polishing method and polishing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006113813A JP2007287939A (ja) | 2006-04-17 | 2006-04-17 | 研磨方法、及び研磨装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007287939A true JP2007287939A (ja) | 2007-11-01 |
| JP2007287939A5 JP2007287939A5 (enExample) | 2009-03-19 |
Family
ID=38605383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006113813A Withdrawn JP2007287939A (ja) | 2006-04-17 | 2006-04-17 | 研磨方法、及び研磨装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20070243797A1 (enExample) |
| JP (1) | JP2007287939A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105643464A (zh) * | 2015-12-25 | 2016-06-08 | 深圳市财富之舟科技有限公司 | 一种移动终端壳体的加工方法及壳体模具 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101523565B (zh) * | 2006-10-06 | 2012-02-29 | 株式会社荏原制作所 | 加工终点检测方法、研磨方法及研磨装置 |
| CN117817135B (zh) * | 2024-03-05 | 2024-05-31 | 鑫业诚智能装备(无锡)有限公司 | 一种激光自动标刻装置及标刻方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6096267A (en) * | 1997-02-28 | 2000-08-01 | Extraction Systems, Inc. | System for detecting base contaminants in air |
| US6077350A (en) * | 1998-03-10 | 2000-06-20 | Sony Corporation | System and method for curing polymeric/photoresist coatings |
| US6180422B1 (en) * | 1998-05-06 | 2001-01-30 | International Business Machines Corporation | Endpoint detection by chemical reaction |
| US6066564A (en) * | 1998-05-06 | 2000-05-23 | International Business Machines Corporation | Indirect endpoint detection by chemical reaction |
| US6021679A (en) * | 1998-08-04 | 2000-02-08 | International Business Machines Corporation | Probe for slurry gas sampling |
| US6254453B1 (en) * | 1999-09-30 | 2001-07-03 | International Business Machines Corporation | Optimization of chemical mechanical process by detection of oxide/nitride interface using CLD system |
| US6291351B1 (en) * | 2000-06-28 | 2001-09-18 | International Business Machines Corporation | Endpoint detection in chemical-mechanical polishing of cloisonne structures |
| JP2003338499A (ja) * | 2002-05-20 | 2003-11-28 | Tokyo Electron Ltd | 膜形成方法及び膜形成装置 |
| US6878629B1 (en) * | 2002-06-27 | 2005-04-12 | International Business Machines Corporation | Method for detecting CMP endpoint in acidic slurries |
| US6899784B1 (en) * | 2002-06-27 | 2005-05-31 | International Business Machines Corporation | Apparatus for detecting CMP endpoint in acidic slurries |
| US7189146B2 (en) * | 2003-03-27 | 2007-03-13 | Asm Nutool, Inc. | Method for reduction of defects in wet processed layers |
| KR100583105B1 (ko) * | 2003-12-24 | 2006-05-23 | 주식회사 하이닉스반도체 | 반도체 소자의 화학적 기계적 연마 공정의 종말점 검출 방법 |
-
2006
- 2006-04-17 JP JP2006113813A patent/JP2007287939A/ja not_active Withdrawn
-
2007
- 2007-04-16 US US11/785,190 patent/US20070243797A1/en not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105643464A (zh) * | 2015-12-25 | 2016-06-08 | 深圳市财富之舟科技有限公司 | 一种移动终端壳体的加工方法及壳体模具 |
| CN105643464B (zh) * | 2015-12-25 | 2019-06-07 | 深圳市沃特沃德股份有限公司 | 一种移动终端壳体的加工方法及壳体模具 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20070243797A1 (en) | 2007-10-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
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| A621 | Written request for application examination |
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| A521 | Request for written amendment filed |
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| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20090811 |
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| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20091007 |