JP2007284259A - シリコンの製造方法及び製造装置 - Google Patents
シリコンの製造方法及び製造装置 Download PDFInfo
- Publication number
- JP2007284259A JP2007284259A JP2006109598A JP2006109598A JP2007284259A JP 2007284259 A JP2007284259 A JP 2007284259A JP 2006109598 A JP2006109598 A JP 2006109598A JP 2006109598 A JP2006109598 A JP 2006109598A JP 2007284259 A JP2007284259 A JP 2007284259A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- metal
- particles
- chlorine compound
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 340
- 239000010703 silicon Substances 0.000 title claims abstract description 340
- 238000000034 method Methods 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 338
- 229910052751 metal Inorganic materials 0.000 claims abstract description 167
- 239000002184 metal Substances 0.000 claims abstract description 167
- 239000002245 particle Substances 0.000 claims abstract description 155
- 238000004519 manufacturing process Methods 0.000 claims abstract description 138
- 239000002923 metal particle Substances 0.000 claims abstract description 107
- 150000001805 chlorine compounds Chemical class 0.000 claims abstract description 84
- 239000007788 liquid Substances 0.000 claims abstract description 80
- 239000012530 fluid Substances 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims description 229
- 238000010438 heat treatment Methods 0.000 claims description 75
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 51
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 45
- 239000005049 silicon tetrachloride Substances 0.000 claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 43
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 37
- 239000010453 quartz Substances 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 239000006227 byproduct Substances 0.000 claims description 20
- 238000009826 distribution Methods 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 20
- 230000002829 reductive effect Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 230000006698 induction Effects 0.000 claims description 14
- POFAUXBEMGMSAV-UHFFFAOYSA-N [Si].[Cl] Chemical class [Si].[Cl] POFAUXBEMGMSAV-UHFFFAOYSA-N 0.000 claims description 12
- 229910052801 chlorine Inorganic materials 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 229910001510 metal chloride Inorganic materials 0.000 claims description 7
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000007789 gas Substances 0.000 description 35
- 238000006722 reduction reaction Methods 0.000 description 35
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 22
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 16
- 239000005052 trichlorosilane Substances 0.000 description 16
- 230000009467 reduction Effects 0.000 description 10
- 238000011109 contamination Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 7
- 239000007921 spray Substances 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 238000005979 thermal decomposition reaction Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000011362 coarse particle Substances 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 238000004821 distillation Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000011856 silicon-based particle Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000012798 spherical particle Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012611 container material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006109598A JP2007284259A (ja) | 2006-04-12 | 2006-04-12 | シリコンの製造方法及び製造装置 |
| PCT/JP2007/057044 WO2007119605A1 (fr) | 2006-04-12 | 2007-03-30 | Procédé et appareil de fabrication de silicium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006109598A JP2007284259A (ja) | 2006-04-12 | 2006-04-12 | シリコンの製造方法及び製造装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2007284259A true JP2007284259A (ja) | 2007-11-01 |
Family
ID=38609373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006109598A Withdrawn JP2007284259A (ja) | 2006-04-12 | 2006-04-12 | シリコンの製造方法及び製造装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2007284259A (fr) |
| WO (1) | WO2007119605A1 (fr) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009110474A1 (fr) * | 2008-03-04 | 2009-09-11 | 住友化学株式会社 | Procédé de production de silicium et appareil de production de silicium |
| WO2012064046A2 (fr) * | 2010-11-11 | 2012-05-18 | 타운마이닝 컴퍼니., 리미티드 | Appareil pour la fabrication de poudre fine de silicium de pureté élevée |
| WO2012064047A2 (fr) * | 2010-11-11 | 2012-05-18 | 타운마이닝 컴퍼니., 리미티드 | Appareil pour la fabrication de poudre fine de silicium de pureté élevée |
| DE112009003720T5 (de) | 2008-12-10 | 2012-06-14 | National Institute For Materials Science | Verfahren zur Herstellung von Silicium |
| WO2013013857A1 (fr) * | 2011-07-25 | 2013-01-31 | Evonik Degussa Gmbh | Utilisation de sous-produits de type tétrachlorure de silicium pour produire du silicium au moyen d'une réaction faisant intervenir des agents réducteurs métalliques |
| KR20130077492A (ko) * | 2011-12-29 | 2013-07-09 | 엘지이노텍 주식회사 | 탄화 규소 제조장치 및 제조방법 |
| JP2014148455A (ja) * | 2013-01-30 | 2014-08-21 | Yutaka Kamaike | シリコン結晶の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3310828A1 (de) * | 1983-03-24 | 1984-09-27 | Bayer Ag, 5090 Leverkusen | Verfahren zur herstellung von silicium |
| DE3824065A1 (de) * | 1988-07-15 | 1990-01-18 | Bayer Ag | Verfahren zur herstellung von solarsilicium |
| JP3844856B2 (ja) * | 1997-09-11 | 2006-11-15 | 住友チタニウム株式会社 | 高純度シリコンの製造方法 |
| JP4038110B2 (ja) * | 2001-10-19 | 2008-01-23 | 株式会社トクヤマ | シリコンの製造方法 |
-
2006
- 2006-04-12 JP JP2006109598A patent/JP2007284259A/ja not_active Withdrawn
-
2007
- 2007-03-30 WO PCT/JP2007/057044 patent/WO2007119605A1/fr active Application Filing
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009110474A1 (fr) * | 2008-03-04 | 2009-09-11 | 住友化学株式会社 | Procédé de production de silicium et appareil de production de silicium |
| DE112009003720T5 (de) | 2008-12-10 | 2012-06-14 | National Institute For Materials Science | Verfahren zur Herstellung von Silicium |
| WO2012064046A2 (fr) * | 2010-11-11 | 2012-05-18 | 타운마이닝 컴퍼니., 리미티드 | Appareil pour la fabrication de poudre fine de silicium de pureté élevée |
| WO2012064047A2 (fr) * | 2010-11-11 | 2012-05-18 | 타운마이닝 컴퍼니., 리미티드 | Appareil pour la fabrication de poudre fine de silicium de pureté élevée |
| WO2012064046A3 (fr) * | 2010-11-11 | 2012-07-19 | 타운마이닝 컴퍼니., 리미티드 | Appareil pour la fabrication de poudre fine de silicium de pureté élevée |
| WO2012064047A3 (fr) * | 2010-11-11 | 2012-07-19 | 타운마이닝 컴퍼니., 리미티드 | Appareil pour la fabrication de poudre fine de silicium de pureté élevée |
| WO2013013857A1 (fr) * | 2011-07-25 | 2013-01-31 | Evonik Degussa Gmbh | Utilisation de sous-produits de type tétrachlorure de silicium pour produire du silicium au moyen d'une réaction faisant intervenir des agents réducteurs métalliques |
| KR20130077492A (ko) * | 2011-12-29 | 2013-07-09 | 엘지이노텍 주식회사 | 탄화 규소 제조장치 및 제조방법 |
| KR101931163B1 (ko) * | 2011-12-29 | 2018-12-21 | 엘지이노텍 주식회사 | 탄화 규소 제조장치 및 제조방법 |
| JP2014148455A (ja) * | 2013-01-30 | 2014-08-21 | Yutaka Kamaike | シリコン結晶の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007119605A1 (fr) | 2007-10-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071012 |
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| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20090130 |