JP2007280983A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2007280983A JP2007280983A JP2006101527A JP2006101527A JP2007280983A JP 2007280983 A JP2007280983 A JP 2007280983A JP 2006101527 A JP2006101527 A JP 2006101527A JP 2006101527 A JP2006101527 A JP 2006101527A JP 2007280983 A JP2007280983 A JP 2007280983A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- package
- light
- emitting element
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006101527A JP2007280983A (ja) | 2006-04-03 | 2006-04-03 | 発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006101527A JP2007280983A (ja) | 2006-04-03 | 2006-04-03 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007280983A true JP2007280983A (ja) | 2007-10-25 |
JP2007280983A5 JP2007280983A5 (enrdf_load_stackoverflow) | 2009-04-30 |
Family
ID=38682166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006101527A Pending JP2007280983A (ja) | 2006-04-03 | 2006-04-03 | 発光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2007280983A (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010129883A (ja) * | 2008-11-28 | 2010-06-10 | Sharp Corp | 発光装置 |
WO2011136250A1 (ja) * | 2010-04-27 | 2011-11-03 | ローム株式会社 | Ledモジュール |
WO2012169717A1 (en) * | 2011-06-08 | 2012-12-13 | Seoul Semiconductor Co., Ltd. | Light emitting diode package |
US8399902B2 (en) | 2009-08-05 | 2013-03-19 | Sharp Kabushiki Kaisha | Light emitting device and method of manufacturing light emitting device |
US8431952B2 (en) | 2010-08-27 | 2013-04-30 | Sharp Kabushiki Kaisha | Light emitting device |
US8803182B2 (en) | 2009-02-24 | 2014-08-12 | Nichia Corporation | Light emitting device comprising protective element and base |
KR101861230B1 (ko) | 2011-08-05 | 2018-05-28 | 서울반도체 주식회사 | 발광 다이오드 패키지 및 이를 포함하는 백라이트 유닛 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0259399A (ja) * | 1988-08-25 | 1990-02-28 | Hitachi Maxell Ltd | Icカード用の半導体装置 |
JPH10144965A (ja) * | 1996-11-11 | 1998-05-29 | Hamamatsu Photonics Kk | 光半導体装置及びその製造方法 |
JPH11298041A (ja) * | 1998-04-15 | 1999-10-29 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子及び光源装置 |
JP2001223305A (ja) * | 2000-02-10 | 2001-08-17 | Matsushita Electric Ind Co Ltd | 樹脂封止半導体装置 |
JP2002314146A (ja) * | 2001-04-12 | 2002-10-25 | Toyoda Gosei Co Ltd | Ledランプ |
JP2005183882A (ja) * | 2003-12-24 | 2005-07-07 | Sharp Corp | 光結合器およびそれを用いた電子機器 |
JP2005294736A (ja) * | 2004-04-05 | 2005-10-20 | Stanley Electric Co Ltd | 半導体発光装置の製造方法 |
JP2006332618A (ja) * | 2005-04-25 | 2006-12-07 | Naoya Yanase | 電子部品実装基板、及びその電子部品実装基板の製造方法 |
-
2006
- 2006-04-03 JP JP2006101527A patent/JP2007280983A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0259399A (ja) * | 1988-08-25 | 1990-02-28 | Hitachi Maxell Ltd | Icカード用の半導体装置 |
JPH10144965A (ja) * | 1996-11-11 | 1998-05-29 | Hamamatsu Photonics Kk | 光半導体装置及びその製造方法 |
JPH11298041A (ja) * | 1998-04-15 | 1999-10-29 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子及び光源装置 |
JP2001223305A (ja) * | 2000-02-10 | 2001-08-17 | Matsushita Electric Ind Co Ltd | 樹脂封止半導体装置 |
JP2002314146A (ja) * | 2001-04-12 | 2002-10-25 | Toyoda Gosei Co Ltd | Ledランプ |
JP2005183882A (ja) * | 2003-12-24 | 2005-07-07 | Sharp Corp | 光結合器およびそれを用いた電子機器 |
JP2005294736A (ja) * | 2004-04-05 | 2005-10-20 | Stanley Electric Co Ltd | 半導体発光装置の製造方法 |
JP2006332618A (ja) * | 2005-04-25 | 2006-12-07 | Naoya Yanase | 電子部品実装基板、及びその電子部品実装基板の製造方法 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010129883A (ja) * | 2008-11-28 | 2010-06-10 | Sharp Corp | 発光装置 |
US8476657B2 (en) | 2008-11-28 | 2013-07-02 | Sharp Kabushiki Kaisha | Light-emitting device |
US8803182B2 (en) | 2009-02-24 | 2014-08-12 | Nichia Corporation | Light emitting device comprising protective element and base |
US8399902B2 (en) | 2009-08-05 | 2013-03-19 | Sharp Kabushiki Kaisha | Light emitting device and method of manufacturing light emitting device |
US9613937B2 (en) | 2010-04-27 | 2017-04-04 | Rohm Co., Ltd. | LED module |
WO2011136250A1 (ja) * | 2010-04-27 | 2011-11-03 | ローム株式会社 | Ledモジュール |
JP2011233671A (ja) * | 2010-04-27 | 2011-11-17 | Rohm Co Ltd | Ledモジュール |
US10586906B2 (en) | 2010-04-27 | 2020-03-10 | Rohm Co., Ltd. | LED module |
CN102859730A (zh) * | 2010-04-27 | 2013-01-02 | 罗姆股份有限公司 | Led模块 |
US9093294B2 (en) | 2010-04-27 | 2015-07-28 | Rohm Co., Ltd. | LED module |
US10333040B2 (en) | 2010-04-27 | 2019-06-25 | Rohm Co., Ltd. | LED module |
US8431952B2 (en) | 2010-08-27 | 2013-04-30 | Sharp Kabushiki Kaisha | Light emitting device |
US9287477B2 (en) | 2011-06-08 | 2016-03-15 | Seoul Semiconductor Co., Ltd. | Light emitting diode package |
WO2012169717A1 (en) * | 2011-06-08 | 2012-12-13 | Seoul Semiconductor Co., Ltd. | Light emitting diode package |
KR101861230B1 (ko) | 2011-08-05 | 2018-05-28 | 서울반도체 주식회사 | 발광 다이오드 패키지 및 이를 포함하는 백라이트 유닛 |
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