JP2007273883A - 光半導体素子および光半導体装置 - Google Patents
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Abstract
【解決手段】 光半導体素子(100)は、第1の光導波路領域(B)と、第1の光導波路領域と光結合され屈折率を変化させるためのヒータ(9)を備える第2の光導波路領域(A)と、を備えた光半導体素子(40)と、温度制御装置(20)と熱的に接続されるべき領域(30)に設けられた金属パターン(31)と、光半導体素子における第1の光導波路領域の上面であって第1の光導波路領域とは電気的に分離された領域と金属パターンとの間を接続する1つまたは複数の熱伝導部材(32)とを有することを特徴とする。
【選択図】 図1
Description
8,31 電極
9 ヒータ
20 温度制御装置
30 マウントキャリア
32 ワイヤ
33 熱伝導部材
40 波長可変半導体レーザチップ
100 レーザモジュール
Claims (13)
- 第1の光導波路領域と、前記第1の光導波路領域と光結合され、屈折率を変化させるためのヒータを備える第2の光導波路領域と、を備えた光半導体素子と、
温度制御装置と熱的に接続されるべき領域に設けられた金属パターンと、
前記光半導体素子における前記第1の光導波路領域の上面であって、前記第1の光導波路領域とは電気的に分離された領域と前記金属パターンとの間を接続する1つまたは複数の熱伝導部材とを有することを特徴とする光半導体装置。 - 第1の光導波路領域と、前記第1の光導波路領域と光結合され、屈折率を変化させるためのヒータを備える第2の光導波路領域と、を備えた光半導体素子と、
温度制御装置と熱的に接続されるべき領域に設けられ、電気的に浮遊状態である金属パターンと、
前記光半導体素子における前記第1の光導波路領域の上面であって、前記第1の光導波路領域と電気的に接続された領域と前記金属パターンとの間を接続する1つまたは複数の熱伝導部材とを有することを特徴とする光半導体装置。 - 第1の光導波路領域と、前記第1の光導波路領域と光結合され、屈折率を変化させるためのヒータを備える第2の光導波路領域と、を備えた光半導体素子と、
温度制御装置と熱的に接続されるべき領域に設けられた金属パターンと、
前記光半導体素子における前記第1の光導波路領域の上面であって、前記第1の光導波路領域と電気的に接続された領域と前記金属パターンとの間を接続する複数の熱伝導部材とを有することを特徴とする光半導体装置。 - 第1の光導波路領域と、前記第1の光導波路領域と光結合され、屈折率を変化させるためのヒータを備える第2の光導波路領域と、を備えた光半導体素子と、
温度制御装置と熱的に接続されるべき領域に設けられた金属パターンと、
前記光半導体素子における前記第1の光導波路領域の上面であって、前記第1の光導波路領域の中央より前記第2の光導波路領域に近い領域と前記金属パターンとの間を接続する1つまたは複数の熱伝導部材とを有することを特徴とする光半導体装置。 - 前記熱伝導部材のうち少なくとも1つは、前記第1の光導波路領域の中央より前記第2の光導波路領域に近い領域に接続されていることを特徴とする請求項1〜3のいずれかに記載の光半導体装置。
- 前記温度制御装置と熱的に接続されるべき領域に設けられた、外部と電気的に接続されるべき第2の金属パターンをさらに備え、
前記第1の光導波路領域の上面であって、前記第1の光半導体領域と電気的に接続された領域と前記第2の金属パターンとの間が熱伝導部材を介して電気的に接続されていることを特徴とする請求項1記載の光半導体装置。 - 前記第1の光導波路領域は、利得領域または変調領域であることを特徴とする請求項1〜4のいずれかに記載の光半導体装置。
- 前記第1の光導波路領域および前記第2の光導波路領域は、回折格子を有する第1の領域と、前記第1の領域に連結されかつスペース部となる第2の領域とを備えるセグメントを複数備えることを特徴とする請求項1〜4のいずれかに記載の光半導体装置。
- 第1の光導波路領域と、
前記第1の光導波路領域と光結合され、屈折率を変化させるためのヒータを備える第2の光導波路領域と、
前記第1の光導波路領域の上面であって、前記第1の光導波路領域の光軸方向に対する長さの2分の1よりも大きい延在距離をもって設けられた金属パッドとを有することを特徴とする光半導体素子。 - 第1の光導波路領域と、
前記第1の光導波路領域と光結合され、屈折率を変化させるためのヒータを備える第2の光導波路領域と、
前記第1の光導波路領域の上面であって、前記第1の光導波路領域の中央より前記第2の光導波路領域に近い領域に設けられた金属パッドとを有することを特徴とする光半導体素子。 - 前記金属パターンは、複数に分割されていることを特徴とする請求項9または10記載の光半導体素子。
- 前記金属パターンは、前記第1の光導波路領域と電気的に接続されていることを特徴とする請求項9または10記載の光半導体素子。
- 前記金属パターンは、前記第1の光導波路領域と電気的に分離されていることを特徴とする請求項9または10記載の光半導体素子。
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JP2006100351A JP4772564B2 (ja) | 2006-03-31 | 2006-03-31 | 光半導体素子および光半導体装置 |
US11/730,260 US7474684B2 (en) | 2006-03-31 | 2007-03-30 | Optical semiconductor element and optical semiconductor device |
US12/314,350 US7656927B2 (en) | 2006-03-31 | 2008-12-09 | Optical semiconductor element and optical semiconductor device |
US12/640,897 US20100091805A1 (en) | 2006-03-31 | 2009-12-17 | Optical semiconductor element and optical semiconductor device |
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JP2006100351A JP4772564B2 (ja) | 2006-03-31 | 2006-03-31 | 光半導体素子および光半導体装置 |
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US8902938B2 (en) | 2012-07-04 | 2014-12-02 | Sumitomo Electric Industries, Ltd. | Method to tune emission wavelength of wavelength tunable laser diode |
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JP2007273644A (ja) * | 2006-03-30 | 2007-10-18 | Eudyna Devices Inc | 光半導体装置、レーザチップおよびレーザモジュール |
US20130070795A1 (en) * | 2011-09-16 | 2013-03-21 | Sumitomo Electric Industries, Ltd. | Method to switch emission wavelength of tunable laser diode |
US10074959B2 (en) * | 2016-08-03 | 2018-09-11 | Emcore Corporation | Modulated laser source and methods of its fabrication and operation |
US11479849B2 (en) * | 2019-06-03 | 2022-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Physical vapor deposition chamber with target surface morphology monitor |
Citations (7)
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JPH05291693A (ja) * | 1992-04-06 | 1993-11-05 | Mitsubishi Electric Corp | 半導体レーザ素子の放熱方法 |
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JP2000312049A (ja) * | 1999-04-27 | 2000-11-07 | Fuji Photo Film Co Ltd | 半導体光機能装置 |
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US5841799A (en) * | 1994-12-17 | 1998-11-24 | Canon Kabushiki Kaisha | Semiconductor laser, modulation method therefor and optical communication system using the same |
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JP2001094200A (ja) * | 1999-09-21 | 2001-04-06 | Hitachi Ltd | 半導体レーザモジュール |
AU2002245062A1 (en) * | 2000-10-30 | 2002-07-30 | Santur Corporation | Laser thermal tuning |
WO2002093090A1 (en) * | 2001-05-14 | 2002-11-21 | University Of Maryland, Baltimore County | Improved thermally tunable system |
US7224708B2 (en) * | 2004-08-30 | 2007-05-29 | The Aerospace Corporation | Focused ion beam heater thermally tunable laser |
-
2006
- 2006-03-31 JP JP2006100351A patent/JP4772564B2/ja active Active
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2007
- 2007-03-30 US US11/730,260 patent/US7474684B2/en active Active
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- 2008-12-09 US US12/314,350 patent/US7656927B2/en not_active Expired - Fee Related
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- 2009-12-17 US US12/640,897 patent/US20100091805A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05291693A (ja) * | 1992-04-06 | 1993-11-05 | Mitsubishi Electric Corp | 半導体レーザ素子の放熱方法 |
JPH08172243A (ja) * | 1994-12-17 | 1996-07-02 | Canon Inc | 光伝送装置及びその変調方式 |
JPH0992934A (ja) * | 1995-09-23 | 1997-04-04 | Nec Corp | 波長可変半導体レーザ素子 |
JPH10282373A (ja) * | 1997-04-07 | 1998-10-23 | Oki Electric Ind Co Ltd | 光モジュールおよび光モジュールの形成方法 |
JPH11150324A (ja) * | 1997-11-18 | 1999-06-02 | Nec Corp | 半導体レーザ |
JPH11186662A (ja) * | 1997-12-24 | 1999-07-09 | Toshiba Corp | 半導体レーザ装置 |
JP2000312049A (ja) * | 1999-04-27 | 2000-11-07 | Fuji Photo Film Co Ltd | 半導体光機能装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8902938B2 (en) | 2012-07-04 | 2014-12-02 | Sumitomo Electric Industries, Ltd. | Method to tune emission wavelength of wavelength tunable laser diode |
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US7474684B2 (en) | 2009-01-06 |
JP4772564B2 (ja) | 2011-09-14 |
US20090103585A1 (en) | 2009-04-23 |
US20100091805A1 (en) | 2010-04-15 |
US7656927B2 (en) | 2010-02-02 |
US20070228551A1 (en) | 2007-10-04 |
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