JP2007268569A - 粉末はんだ材料および接合材料 - Google Patents
粉末はんだ材料および接合材料 Download PDFInfo
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- JP2007268569A JP2007268569A JP2006098061A JP2006098061A JP2007268569A JP 2007268569 A JP2007268569 A JP 2007268569A JP 2006098061 A JP2006098061 A JP 2006098061A JP 2006098061 A JP2006098061 A JP 2006098061A JP 2007268569 A JP2007268569 A JP 2007268569A
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 121
- 239000000463 material Substances 0.000 title claims abstract description 113
- 239000000843 powder Substances 0.000 title claims abstract description 50
- 230000004907 flux Effects 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 239000000654 additive Substances 0.000 claims abstract description 4
- 230000000996 additive effect Effects 0.000 claims abstract description 4
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 4
- 229910052738 indium Inorganic materials 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims description 26
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 2
- 239000006071 cream Substances 0.000 abstract description 26
- 238000002844 melting Methods 0.000 abstract description 14
- 230000008018 melting Effects 0.000 abstract description 14
- 229910007637 SnAg Inorganic materials 0.000 abstract description 12
- 229910052802 copper Inorganic materials 0.000 abstract description 8
- 229910052709 silver Inorganic materials 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 38
- 239000010949 copper Substances 0.000 description 30
- 239000004020 conductor Substances 0.000 description 29
- 239000000758 substrate Substances 0.000 description 15
- 239000000203 mixture Substances 0.000 description 13
- 230000005496 eutectics Effects 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 238000005304 joining Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 229910017750 AgSn Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002244 precipitate Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910016347 CuSn Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910020658 PbSn Inorganic materials 0.000 description 1
- 101150071746 Pbsn gene Proteins 0.000 description 1
- 229910008433 SnCU Inorganic materials 0.000 description 1
- 229910006913 SnSb Inorganic materials 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Images
Abstract
【解決手段】Agを10〜25質量%、Cuを5〜10質量%、残部はSnおよび不可避的不純物からなる粉末はんだ材料とする。さらに、Ni、Co、Sb、Fe、Ge、BiおよびInのうち、少なくとも1種類の添加元素を合計で2.0質量%以下(但し、下限値の零を含まず)の割合で含む。また、添加元素としてNiを含む場合には、1.0質量%以下(但し、下限値の零を含まず)の割合で含むことを特徴とする。なお、粒径を50μm以下とする。そして、これらのはんだ材料の粉末とフラックスとを混合してクリームはんだとする。
【選択図】図2
Description
ォトンエネルギー、縦軸はX線の検出強度を示している。
5Cu粉末(固相線の温度:220℃付近、液相線の温度:345℃付近)とフラックスを混合したクリームはんだを塗布する。半導体素子14の表面電極の表面には、はんだ接合を可能とするために、Niめっきが施されている。その後、塗布したクリームはんだに配線用導体16の被接合面が接触するように、半導体素子14の上に配線用導体16を置く。
14 半導体素子
15 第1のはんだ材料の粉末よりなる接合材料
17 第2のはんだ材料の粉末よりなる接合材料
Claims (5)
- Agを10〜25質量%、Cuを5〜10質量%、残部はSn及び不可避的不純物からなることを特徴とする粉末はんだ材料。
- 前記粉末はんだ材料は、さらに、Ni、Co、Sb、Fe、Ge、BiおよびInのうち、少なくとも1種類の添加元素を合計で2.0質量%以下(但し、下限値の零を含まず)の割合で含むことを特徴とする請求項1に記載の粉末はんだ材料。
- 前記粉末はんだ材料は、さらにNiを1.0質量%以下(但し、下限値の零を含まず)の割合で含むことを特徴とする請求項1に記載の粉末はんだ材料。
- 前記粉末はんだ材料は、粒径が50μm以下であることを特徴とする請求項1〜3のいずれか一つに記載の粉末はんだ材料。
- 請求項1〜4のいずれか一つに記載の粉末はんだ材料とフラックスとを混合したことを特徴とする接合材料。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2006098061A JP4722751B2 (ja) | 2006-03-31 | 2006-03-31 | 粉末はんだ材料および接合材料 |
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JP2006098061A JP4722751B2 (ja) | 2006-03-31 | 2006-03-31 | 粉末はんだ材料および接合材料 |
Publications (2)
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JP2007268569A true JP2007268569A (ja) | 2007-10-18 |
JP4722751B2 JP4722751B2 (ja) | 2011-07-13 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008004531A3 (fr) * | 2006-07-05 | 2008-03-27 | Fuji Electric Holdings | Crème à braser et procédé de brasage d'un élément électronique |
WO2010074956A2 (en) * | 2008-12-23 | 2010-07-01 | Intel Corporation | Doping of lead-free solder alloys and structures formed thereby |
US9198302B2 (en) | 2012-07-18 | 2015-11-24 | Koninklijke Philips N.V. | Method of soldering an electronic component with a high lateral accuracy |
EP3225348A1 (en) | 2015-07-08 | 2017-10-04 | Napra Co., Ltd. | Metal particles having intermetallic compound nano-composite structure crystal |
EP3266558A1 (en) | 2016-07-05 | 2018-01-10 | Napra Co., Ltd. | Multi-layer preform sheet |
US10253395B2 (en) | 2015-10-27 | 2019-04-09 | Tdk Corporation | Electronic circuit module component |
US10906136B1 (en) | 2019-10-04 | 2021-02-02 | Napra Co., Ltd. | Joint structure |
US11364575B2 (en) | 2020-03-12 | 2022-06-21 | Napra Co., Ltd. | Metal particle |
US11453089B2 (en) | 2019-09-18 | 2022-09-27 | Napra Co., Ltd. | Bonding structure |
US11534870B2 (en) | 2021-01-11 | 2022-12-27 | Napra Co., Ltd. | Metal particle |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS526468A (en) * | 1975-07-04 | 1977-01-18 | Sumitomo Metal Mining Co Ltd | Brazing material |
JPH06269982A (ja) * | 1993-03-18 | 1994-09-27 | Tokuriki Honten Co Ltd | Ag系はんだ |
JPH06269981A (ja) * | 1993-03-18 | 1994-09-27 | Tokuriki Honten Co Ltd | Ag系はんだ |
JP2003290976A (ja) * | 2002-04-05 | 2003-10-14 | Yamaha Corp | はんだ合金及びその製造方法、並びにはんだ合金ペースト |
JP2005125360A (ja) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 高温はんだ材料,高温はんだ材料評価方法および電気/電子機器ならびにはんだ接合構造体 |
JP2005138152A (ja) * | 2003-11-07 | 2005-06-02 | Tanaka Kikinzoku Kogyo Kk | 低融点ろう材 |
-
2006
- 2006-03-31 JP JP2006098061A patent/JP4722751B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS526468A (en) * | 1975-07-04 | 1977-01-18 | Sumitomo Metal Mining Co Ltd | Brazing material |
JPH06269982A (ja) * | 1993-03-18 | 1994-09-27 | Tokuriki Honten Co Ltd | Ag系はんだ |
JPH06269981A (ja) * | 1993-03-18 | 1994-09-27 | Tokuriki Honten Co Ltd | Ag系はんだ |
JP2003290976A (ja) * | 2002-04-05 | 2003-10-14 | Yamaha Corp | はんだ合金及びその製造方法、並びにはんだ合金ペースト |
JP2005125360A (ja) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 高温はんだ材料,高温はんだ材料評価方法および電気/電子機器ならびにはんだ接合構造体 |
JP2005138152A (ja) * | 2003-11-07 | 2005-06-02 | Tanaka Kikinzoku Kogyo Kk | 低融点ろう材 |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008004531A3 (fr) * | 2006-07-05 | 2008-03-27 | Fuji Electric Holdings | Crème à braser et procédé de brasage d'un élément électronique |
JP5142999B2 (ja) * | 2006-07-05 | 2013-02-13 | 富士電機株式会社 | クリームはんだ及び電子部品のはんだ付け方法 |
US8968488B2 (en) | 2006-07-05 | 2015-03-03 | Fuji Electric Co., Ltd. | Cream solder and method of soldering electronic part |
US9301403B2 (en) | 2006-07-05 | 2016-03-29 | Fuji Electric Co., Ltd. | Method of soldering electronic part |
WO2010074956A2 (en) * | 2008-12-23 | 2010-07-01 | Intel Corporation | Doping of lead-free solder alloys and structures formed thereby |
WO2010074956A3 (en) * | 2008-12-23 | 2010-08-26 | Intel Corporation | Doping of lead-free solder alloys and structures formed thereby |
GB2478892A (en) * | 2008-12-23 | 2011-09-21 | Intel Corp | Doping of lead-free solder alloys and structures formed thereby |
US8395051B2 (en) | 2008-12-23 | 2013-03-12 | Intel Corporation | Doping of lead-free solder alloys and structures formed thereby |
GB2478892B (en) * | 2008-12-23 | 2013-07-31 | Intel Corp | Doping of lead-free solder alloys and structures formed thereby |
US9198302B2 (en) | 2012-07-18 | 2015-11-24 | Koninklijke Philips N.V. | Method of soldering an electronic component with a high lateral accuracy |
EP3225348A1 (en) | 2015-07-08 | 2017-10-04 | Napra Co., Ltd. | Metal particles having intermetallic compound nano-composite structure crystal |
US10016848B2 (en) | 2015-07-08 | 2018-07-10 | Napra Co., Ltd. | Metal particles having intermetallic compound nano-composite structure crystal |
US10478924B2 (en) | 2015-07-08 | 2019-11-19 | Napra Co., Ltd. | Metal particle and electroconductive paste formed therefrom |
US10507551B2 (en) | 2015-07-08 | 2019-12-17 | Napra Co., Ltd. | Metal particle and articles formed therefrom |
US10253395B2 (en) | 2015-10-27 | 2019-04-09 | Tdk Corporation | Electronic circuit module component |
EP3266558A1 (en) | 2016-07-05 | 2018-01-10 | Napra Co., Ltd. | Multi-layer preform sheet |
US9950496B2 (en) | 2016-07-05 | 2018-04-24 | Napra Co., Ltd. | Multi-layer preform sheet |
US11453089B2 (en) | 2019-09-18 | 2022-09-27 | Napra Co., Ltd. | Bonding structure |
US10906136B1 (en) | 2019-10-04 | 2021-02-02 | Napra Co., Ltd. | Joint structure |
US11364575B2 (en) | 2020-03-12 | 2022-06-21 | Napra Co., Ltd. | Metal particle |
US11534870B2 (en) | 2021-01-11 | 2022-12-27 | Napra Co., Ltd. | Metal particle |
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