JP2007234918A - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP2007234918A JP2007234918A JP2006055786A JP2006055786A JP2007234918A JP 2007234918 A JP2007234918 A JP 2007234918A JP 2006055786 A JP2006055786 A JP 2006055786A JP 2006055786 A JP2006055786 A JP 2006055786A JP 2007234918 A JP2007234918 A JP 2007234918A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- substrate
- layer
- region light
- blue region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 claims description 59
- 239000012535 impurity Substances 0.000 claims description 41
- -1 nitride compound Chemical class 0.000 claims description 28
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000000843 powder Substances 0.000 abstract description 7
- 229910052725 zinc Inorganic materials 0.000 abstract description 6
- 239000003973 paint Substances 0.000 abstract description 5
- 238000003475 lamination Methods 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 description 16
- 239000011701 zinc Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052749 magnesium Inorganic materials 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000007716 flux method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- ORFSSYGWXNGVFB-UHFFFAOYSA-N sodium 4-amino-6-[[4-[4-[(8-amino-1-hydroxy-5,7-disulfonaphthalen-2-yl)diazenyl]-3-methoxyphenyl]-2-methoxyphenyl]diazenyl]-5-hydroxynaphthalene-1,3-disulfonic acid Chemical compound COC1=C(C=CC(=C1)C2=CC(=C(C=C2)N=NC3=C(C4=C(C=C3)C(=CC(=C4N)S(=O)(=O)O)S(=O)(=O)O)O)OC)N=NC5=C(C6=C(C=C5)C(=CC(=C6N)S(=O)(=O)O)S(=O)(=O)O)O.[Na+] ORFSSYGWXNGVFB-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006055786A JP2007234918A (ja) | 2006-03-02 | 2006-03-02 | 半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006055786A JP2007234918A (ja) | 2006-03-02 | 2006-03-02 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007234918A true JP2007234918A (ja) | 2007-09-13 |
| JP2007234918A5 JP2007234918A5 (enExample) | 2008-06-26 |
Family
ID=38555186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006055786A Withdrawn JP2007234918A (ja) | 2006-03-02 | 2006-03-02 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007234918A (enExample) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008075581A1 (ja) * | 2006-12-20 | 2008-06-26 | Rohm Co., Ltd. | 窒化物半導体発光素子およびその製造方法 |
| WO2010041657A1 (ja) * | 2008-10-07 | 2010-04-15 | 住友電気工業株式会社 | 窒化ガリウム系半導体発光素子、窒化ガリウム系半導体発光素子を作製する方法、窒化ガリウム系発光ダイオード、エピタキシャルウエハ、及び窒化ガリウム系発光ダイオードを作製する方法 |
| JP2010098194A (ja) * | 2008-10-17 | 2010-04-30 | Meijo Univ | 蛍光体、発光素子、発光装置及び蛍光体の製造方法 |
| JP2011155241A (ja) * | 2010-01-25 | 2011-08-11 | Invenlux Corp | 歪平衡発光デバイス及びその製造方法 |
| JP2012015566A (ja) * | 2008-10-07 | 2012-01-19 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体発光素子、窒化ガリウム系半導体発光素子を作製する方法、窒化ガリウム系発光ダイオード、エピタキシャルウエハ、及び窒化ガリウム系発光ダイオードを作製する方法 |
| WO2014003346A1 (en) * | 2012-06-28 | 2014-01-03 | Seoul Opto Device Co., Ltd. | Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module |
| JP2014199953A (ja) * | 2014-07-28 | 2014-10-23 | 日本碍子株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| CN104900771A (zh) * | 2015-06-24 | 2015-09-09 | 山东浪潮华光光电子股份有限公司 | 一种无荧光粉的高效白光led外延结构及其生长方法 |
-
2006
- 2006-03-02 JP JP2006055786A patent/JP2007234918A/ja not_active Withdrawn
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008075581A1 (ja) * | 2006-12-20 | 2008-06-26 | Rohm Co., Ltd. | 窒化物半導体発光素子およびその製造方法 |
| WO2010041657A1 (ja) * | 2008-10-07 | 2010-04-15 | 住友電気工業株式会社 | 窒化ガリウム系半導体発光素子、窒化ガリウム系半導体発光素子を作製する方法、窒化ガリウム系発光ダイオード、エピタキシャルウエハ、及び窒化ガリウム系発光ダイオードを作製する方法 |
| JP2010114418A (ja) * | 2008-10-07 | 2010-05-20 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体発光素子、窒化ガリウム系半導体発光素子を作製する方法、窒化ガリウム系発光ダイオード、エピタキシャルウエハ、及び窒化ガリウム系発光ダイオードを作製する方法 |
| CN102177593A (zh) * | 2008-10-07 | 2011-09-07 | 住友电气工业株式会社 | 氮化镓系半导体发光元件、制作氮化镓系半导体发光元件的方法、氮化镓系发光二极管、外延晶片及制作氮化镓系发光二极管的方法 |
| JP2012015566A (ja) * | 2008-10-07 | 2012-01-19 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体発光素子、窒化ガリウム系半導体発光素子を作製する方法、窒化ガリウム系発光ダイオード、エピタキシャルウエハ、及び窒化ガリウム系発光ダイオードを作製する方法 |
| KR101267702B1 (ko) | 2008-10-07 | 2013-05-24 | 스미토모덴키고교가부시키가이샤 | 질화갈륨계 반도체 발광 소자, 질화갈륨계 반도체 발광 소자를 제작하는 방법, 질화갈륨계 발광 다이오드, 에피택셜 웨이퍼 및 질화갈륨계 발광 다이오드를 제작하는 방법 |
| US8488642B2 (en) | 2008-10-07 | 2013-07-16 | Sumitomo Electric Industries, Ltd. | Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diode |
| JP2010098194A (ja) * | 2008-10-17 | 2010-04-30 | Meijo Univ | 蛍光体、発光素子、発光装置及び蛍光体の製造方法 |
| JP2011155241A (ja) * | 2010-01-25 | 2011-08-11 | Invenlux Corp | 歪平衡発光デバイス及びその製造方法 |
| CN107134518A (zh) * | 2012-06-28 | 2017-09-05 | 首尔伟傲世有限公司 | 发光二极管及其制造方法以及制造发光二极管模块的方法 |
| US9293660B2 (en) | 2012-06-28 | 2016-03-22 | Seoul Viosys Co., Ltd. | Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module |
| US9397269B2 (en) | 2012-06-28 | 2016-07-19 | Seoul Viosys Co., Ltd. | Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module |
| US9530939B2 (en) | 2012-06-28 | 2016-12-27 | Seoul Viosys Co., Ltd. | Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module |
| WO2014003346A1 (en) * | 2012-06-28 | 2014-01-03 | Seoul Opto Device Co., Ltd. | Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module |
| US9859469B2 (en) | 2012-06-28 | 2018-01-02 | Seoul Viosys Co., Ltd. | Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module |
| US9997673B2 (en) | 2012-06-28 | 2018-06-12 | Seoul Viosys Co., Ltd. | Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module |
| US10355171B2 (en) | 2012-06-28 | 2019-07-16 | Seoul Viosys Co., Ltd. | Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module |
| US10672952B2 (en) | 2012-06-28 | 2020-06-02 | Seoul Viosys Co., Ltd. | Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module |
| US10991851B2 (en) | 2012-06-28 | 2021-04-27 | Seoul Viosys Co., Ltd. | Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module |
| JP2014199953A (ja) * | 2014-07-28 | 2014-10-23 | 日本碍子株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| CN104900771A (zh) * | 2015-06-24 | 2015-09-09 | 山东浪潮华光光电子股份有限公司 | 一种无荧光粉的高效白光led外延结构及其生长方法 |
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