JP2007173782A - レーザ照射装置 - Google Patents

レーザ照射装置 Download PDF

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Publication number
JP2007173782A
JP2007173782A JP2006299715A JP2006299715A JP2007173782A JP 2007173782 A JP2007173782 A JP 2007173782A JP 2006299715 A JP2006299715 A JP 2006299715A JP 2006299715 A JP2006299715 A JP 2006299715A JP 2007173782 A JP2007173782 A JP 2007173782A
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JP
Japan
Prior art keywords
layer
laser
plate
substrate
optical system
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Withdrawn
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JP2006299715A
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English (en)
Japanese (ja)
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JP2007173782A5 (enExample
Inventor
Hidekazu Miyairi
秀和 宮入
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006299715A priority Critical patent/JP2007173782A/ja
Publication of JP2007173782A publication Critical patent/JP2007173782A/ja
Publication of JP2007173782A5 publication Critical patent/JP2007173782A5/ja
Withdrawn legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2006299715A 2005-11-23 2006-11-03 レーザ照射装置 Withdrawn JP2007173782A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006299715A JP2007173782A (ja) 2005-11-23 2006-11-03 レーザ照射装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005337901 2005-11-23
JP2006299715A JP2007173782A (ja) 2005-11-23 2006-11-03 レーザ照射装置

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JP2007173782A true JP2007173782A (ja) 2007-07-05
JP2007173782A5 JP2007173782A5 (enExample) 2009-12-17

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JP2006299715A Withdrawn JP2007173782A (ja) 2005-11-23 2006-11-03 レーザ照射装置

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009031482A1 (en) * 2007-09-07 2009-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2009252796A (ja) * 2008-04-01 2009-10-29 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
WO2012098455A1 (en) * 2011-01-20 2012-07-26 Visiometric Oü Arrangement and method in measuring system
KR101521104B1 (ko) * 2009-05-15 2015-05-20 주식회사 디엠에스 선택적 에미터 형성용 확산장치

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02220438A (ja) * 1989-02-22 1990-09-03 Hitachi Ltd レーザ処理方法およびその装置
JPH0847790A (ja) * 1994-06-02 1996-02-20 Mitsubishi Electric Corp 光加工装置及び方法
JP2000031056A (ja) * 1998-07-13 2000-01-28 Fujitsu Ltd 多結晶薄膜の形成方法及び形成装置
JP2001077046A (ja) * 1999-08-31 2001-03-23 Sumitomo Heavy Ind Ltd レーザ加工装置
JP2002075904A (ja) * 2000-09-04 2002-03-15 Toshiba Corp レーザアニール装置および多結晶シリコンの製造方法
JP2002176008A (ja) * 2000-12-08 2002-06-21 Mitsubishi Electric Corp 照射レーザビームの測定方法とその測定装置
JP2003017411A (ja) * 2001-04-20 2003-01-17 Semiconductor Energy Lab Co Ltd レーザ照射装置、並びに半導体装置の作製方法
JP2004119617A (ja) * 2002-09-25 2004-04-15 Advanced Lcd Technologies Development Center Co Ltd 半導体装置とその製造方法および製造装置
JP2005072334A (ja) * 2003-08-26 2005-03-17 Sumitomo Heavy Ind Ltd レーザアニール装置
JP2005074466A (ja) * 2003-08-29 2005-03-24 Sumitomo Heavy Ind Ltd レーザ加工用ノズル及びレーザ加工機
JP2005116729A (ja) * 2003-10-07 2005-04-28 Sharp Corp レーザ加工装置およびレーザ加工方法
JP2005219077A (ja) * 2004-02-04 2005-08-18 Sumitomo Heavy Ind Ltd レーザエネルギ調整装置、及びレーザエネルギ調整方法、及びレーザ加工機

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02220438A (ja) * 1989-02-22 1990-09-03 Hitachi Ltd レーザ処理方法およびその装置
JPH0847790A (ja) * 1994-06-02 1996-02-20 Mitsubishi Electric Corp 光加工装置及び方法
JP2000031056A (ja) * 1998-07-13 2000-01-28 Fujitsu Ltd 多結晶薄膜の形成方法及び形成装置
JP2001077046A (ja) * 1999-08-31 2001-03-23 Sumitomo Heavy Ind Ltd レーザ加工装置
JP2002075904A (ja) * 2000-09-04 2002-03-15 Toshiba Corp レーザアニール装置および多結晶シリコンの製造方法
JP2002176008A (ja) * 2000-12-08 2002-06-21 Mitsubishi Electric Corp 照射レーザビームの測定方法とその測定装置
JP2003017411A (ja) * 2001-04-20 2003-01-17 Semiconductor Energy Lab Co Ltd レーザ照射装置、並びに半導体装置の作製方法
JP2004119617A (ja) * 2002-09-25 2004-04-15 Advanced Lcd Technologies Development Center Co Ltd 半導体装置とその製造方法および製造装置
JP2005072334A (ja) * 2003-08-26 2005-03-17 Sumitomo Heavy Ind Ltd レーザアニール装置
JP2005074466A (ja) * 2003-08-29 2005-03-24 Sumitomo Heavy Ind Ltd レーザ加工用ノズル及びレーザ加工機
JP2005116729A (ja) * 2003-10-07 2005-04-28 Sharp Corp レーザ加工装置およびレーザ加工方法
JP2005219077A (ja) * 2004-02-04 2005-08-18 Sumitomo Heavy Ind Ltd レーザエネルギ調整装置、及びレーザエネルギ調整方法、及びレーザ加工機

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009031482A1 (en) * 2007-09-07 2009-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2009081426A (ja) * 2007-09-07 2009-04-16 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US8459561B2 (en) 2007-09-07 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9508619B2 (en) 2007-09-07 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2009252796A (ja) * 2008-04-01 2009-10-29 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
KR101521104B1 (ko) * 2009-05-15 2015-05-20 주식회사 디엠에스 선택적 에미터 형성용 확산장치
WO2012098455A1 (en) * 2011-01-20 2012-07-26 Visiometric Oü Arrangement and method in measuring system

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