JP2007160499A - Electronic part sealing board, electronic part sealing board in multiple part form, electronic device using electronic part sealing board, and electronic device fabricating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic part sealing board to realize constitution of an electronic device, in which electromagnetic coupling between an electric connection path and a micro electromechanical system is achieved, and effects of high frequency are restricted. <P>SOLUTION: The electronic part sealing board 4 is for gas-tightly sealing a micro electromechanical system 3 of an electronic part 2 comprising a semiconductor substrate 5, the micro electromechanical system 3 formed on a main surface of the semiconductor substrate 5, and an electrode 6 electrically connected to the micro electromechanical system 3. It is also provided with an insulating board 7 provided with a first major surface to be jointed to the main surface of the semiconductor substrate 5 to gas-tightly seal the micro electromechanical system 3, and a wiring conductor 8, of which one end is introduced to the first major surface of the insulating board 7, with another end electrically connected to the electrode 6 of the electronic part 2. One end of the wiring conductor 8 is positioned outside of a jointed part of the main surface of the semiconductor substrate 5 with the first major surface of the insulating board 7. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an electronic component sealing substrate for sealing a microelectromechanical mechanism of an electronic component, a plurality of electronic component sealing substrates, and an electronic component sealing substrate using the electronic component sealing substrate. The present invention relates to an electronic device formed by sealing an electronic mechanical mechanism and a method for manufacturing the electronic device.

  In recent years, a very small electromechanical mechanism, a so-called MEMS (Micro Mechanical Mechanical System), has been formed by applying a processing technique for forming fine wiring such as a semiconductor integrated circuit element on the main surface of a semiconductor substrate such as a silicon wafer. Electronic components are attracting attention, and development is progressing toward practical application.

  Such micro-electromechanical mechanisms have been prototyped and developed in a wide range of fields such as sensors such as accelerometers, pressure sensors, and actuators, and micromirror devices and optical devices that have fine mirrors movably formed. Has been.

  FIG. 9 is a cross-sectional view showing a configuration example of an electronic component in which such a micro-electromechanical mechanism is formed and a conventional electronic device configured by hermetically sealing the electronic component. As shown in FIG. 9, power is supplied to the main surface of the semiconductor substrate 121 on which the micro electro mechanical mechanism 122 is formed, or an electric signal is transmitted from the micro electro mechanical mechanism 122 to an external electric circuit. Are formed so as to be electrically connected to the micro electro mechanical mechanism 122. The semiconductor substrate 121, the microelectromechanical mechanism 122, and the electrode 123 constitute one electronic component 124.

  The electronic component 124 is housed in a recess A of an electronic component housing package (hereinafter also simply referred to as a “package”) 131 having a recess A for housing electronic components, and the electrode 123 of the electronic component 124 is disposed. After connecting to the electrode pad 132 of the package 131 via a conductive connecting material such as a bonding wire 133, the concave portion A of the package 131 is covered with a lid 134, and the electronic component 124 is hermetically sealed in the concave portion A. Form an electronic device. In this case, the electronic component 124 needs to be hermetically sealed in a hollow state so as not to hinder the operation of the micro electro mechanical mechanism 122.

  With respect to this electronic device, a micro electro mechanical mechanism 122 hermetically sealed is formed by connecting a wiring conductor 135 previously formed so as to be led out from the electrode pad 132 of the package 131 to an external electric circuit. The electrode 123, the bonding wire 133, the electrode pad 132, and the wiring conductor 135 are electrically connected to an external electric circuit.

  Such an electronic component 124 is manufactured by arranging a plurality of micro-electromechanical mechanisms 122 vertically and horizontally on the main surface of a large-area semiconductor mother board and dividing the semiconductor mother board into individual pieces. However, in this method, when the microelectromechanical mechanism 122 is divided by dicing or the like, each of the microelectromechanical mechanisms 122 is prevented from being damaged by the cutting powder of the semiconductor mother substrate such as silicon adhering to the microelectromechanical mechanisms 122. When the electronic device 124 is formed, it is necessary to perform a cutting process after protecting the electronic component 124, and the individual electronic components 124 must be individually hermetically sealed in the package 131. Productivity was poor and practical application was difficult.

On the other hand, a method of manufacturing a MEMS-mounted electronic device using a wafer level package process has been disclosed (for example, see Patent Document 1). In an electronic device manufactured by this method, an electrode connected to the MEMS at a joint portion between the substrate on which the MEMS is formed on one main surface and the lid body that covers the microelectromechanical mechanism and is joined to the substrate. Are electrically connected to the wiring conductor of the lid. If this manufacturing method is used, an electronic device equipped with MEMS can be manufactured efficiently and at low cost.
JP 2004-209585 A

  However, in recent years, in order to use a microelectromechanical mechanism in, for example, a high-frequency radio (RF) technology, an electronic component having a microelectromechanical mechanism and an electronic component sealing substrate that seals the microelectromechanical mechanism are provided. There is a demand for further downsizing of electronic devices.

  On the other hand, when the distance between the electrical connection path for leading the electrode electrically connected to the microelectromechanical mechanism to the external electric circuit and the microelectromechanical mechanism is reduced along with the miniaturization, those Electromagnetic interference is likely to be induced between them, and due to this, for example, the mechanical and electrical operation of the micro electromechanical mechanism becomes unstable in the electronic device, and the reliability is likely to decrease. There was a problem.

  Moreover, on / off of an electric field for generating an electrostatic force for driving a microelectromechanical mechanism or on / off of a magnetic field for generating a magnetic force becomes noise, and this noise conducts the electrical connection path. There is a problem in that it may act on a high frequency signal to deteriorate the signal transmission characteristics.

  The present invention has been devised in order to solve the above-mentioned problems, and its purpose is to suppress the influence of electromagnetic coupling and high-frequency noise between the electrical connection path and the microelectromechanical mechanism. Electronic component sealing substrate that makes it possible to configure an electronic device, a plurality of electronic component sealing substrates, an electronic device including such an electronic component sealing substrate, and such An object of the present invention is to provide an electronic device manufacturing method for manufacturing an electronic device with high productivity.

  An electronic component sealing substrate according to the present invention is the electronic component having the semiconductor substrate, the microelectromechanical mechanism formed on the main surface of the semiconductor substrate, and the electrode electrically connected to the microelectromechanical mechanism. An electronic component sealing substrate for hermetically sealing a microelectromechanical mechanism, wherein the first main surface is joined to the main surface of the semiconductor substrate so as to hermetically seal the micromechanical mechanism. An insulating substrate provided with a wiring conductor connected at one end to the first main surface of the insulating substrate and electrically connected to the electrode of the electronic component. The one end of the conductor is located outside a bonding portion between the main surface of the semiconductor substrate and the first main surface of the insulating substrate. This electronic component sealing substrate is referred to as a “first electronic component sealing substrate”.

  Preferably, the first electronic component sealing substrate includes a conductor layer to which a reference potential is supplied inside the insulating substrate. This electronic component sealing substrate is referred to as a “second electronic component sealing substrate”.

  Preferably, the first electronic component sealing substrate is formed inside the insulating substrate and is electrically connected to the wiring conductor, and the insulating substrate. And a resistor electrically connected to the capacitance forming electrode. This electronic component sealing substrate is referred to as a “third electronic component sealing substrate”.

  Preferably, in the third electronic component sealing substrate, the insulating substrate has a higher relative dielectric constant in a region between the capacitance forming electrodes than in other regions. This electronic component sealing substrate is referred to as a “fourth electronic component sealing substrate”.

  Preferably, the third or fourth electronic component sealing substrate includes a connection pad formed on the first main surface of the insulating substrate and electrically connected to the one end of the wiring conductor, The resistor is disposed inside the insulating substrate immediately below the connection pad, and a distance between the capacitance forming electrode and the connection pad is determined by the connection between the resistor and the connection. Longer than the distance between the pads. This electronic component sealing substrate is referred to as a “fifth electronic component sealing substrate”.

  Preferably, in the fifth electronic component sealing substrate, the resistor includes the connection pad or a part of the wiring conductor adjacent to the connection pad. This electronic component sealing substrate is referred to as a “sixth electronic component sealing substrate”.

  Preferably, in any of the third to sixth electronic component sealing substrates, a reference potential is supplied between the first main surface of the insulating substrate and the capacitance forming electrode. A conductor layer is provided. This electronic component sealing substrate is referred to as a “seventh electronic component sealing substrate”.

  Preferably, any of the first to seventh electronic component sealing substrates includes a plurality of mounting pads formed on a second main surface of the insulating substrate facing the first main surface. The mounting pad is disposed in a mounting region on the second main surface, and the mounting region is located inside a bonding portion between the semiconductor substrate and the insulating substrate on the first main surface. The region is opposed to three or less of the four divided regions of the first main surface divided by a straight line that divides the region into four equal parts through the center of the region. This electronic component sealing substrate is referred to as an “eighth electronic component sealing substrate”.

  Preferably, any of the first to seventh electronic component sealing substrates includes a plurality of mounting pads formed on a second main surface of the insulating substrate facing the first main surface. The mounting pad is disposed along a mounting straight line on the second main surface, and the mounting straight line is a joint portion between the semiconductor substrate and the insulating substrate on the first main surface. This is a line that divides the inner region into four equal parts, and that is opposed to three or less of the four segment half-lines extending from the center of the region toward the outer periphery. This electronic component sealing substrate is referred to as a “ninth electronic component sealing substrate”.

  The electronic component sealing substrate according to the present invention has a plurality of regions constituting one of the first to ninth electronic component sealing substrates.

  An electronic device according to the present invention includes a first electronic component sealing substrate, a semiconductor substrate, a microelectromechanical mechanism formed on a main surface of the semiconductor substrate, and an electrical connection to the microelectromechanical mechanism. And an electronic component having an electrode connected to the electrode. This electronic component is referred to as a “first electronic device”.

  Preferably, in the first electronic device, the electronic component sealing substrate includes a conductor layer to which a reference potential is supplied inside the insulating substrate, and the main surface of the semiconductor substrate. And the first main surface of the insulating substrate are joined by a sealing material made of a conductive material that hermetically seals the microelectromechanical mechanism, and the sealing material is electrically connected to the conductor layer. Connected. This electronic component is referred to as a “second electronic component”.

  Preferably, the first or second electronic component is formed on the first main surface of the insulating substrate and electrically connected to the one end of the wiring conductor; And a conductive connection material formed on the connection pad and electrically connected to the electrode of the electronic component. This electronic component is referred to as a “third electronic component”.

  Preferably, the third electronic component covers the conductive bonding material outside the sealing material between the main surface of the semiconductor substrate and the first main surface of the insulating substrate. Thus, the resin material filled is provided.

  A method of manufacturing an electronic device according to the present invention includes a plurality of electronic component regions in which a plurality of electronic component regions in which a microelectromechanical mechanism and electrodes electrically connected to the microelectromechanical mechanism are formed are formed on a semiconductor substrate. Corresponding to the step of preparing the electronic component substrate of the multi-cavity form, the step of preparing the electronic component sealing substrate of the multi-cavity form, and the electrodes of the electronic component substrate of the multi-cavity form Electrically connecting the one end of each of the wiring conductors and joining the main surface of the semiconductor substrate and the one main surface of the insulating substrate; And a step of dividing a joined body of the electronic component substrate having the plurality of molds and the electronic component sealing substrate having the plurality of molds for each electronic component region. .

  According to the electronic component sealing substrate of the present invention, an electronic component having a semiconductor substrate, a microelectromechanical mechanism formed on a main surface of the semiconductor substrate, and an electrode electrically connected to the microelectromechanical mechanism. An electronic component sealing substrate for hermetically sealing a microelectromechanical mechanism, the insulating substrate having a first main surface joined to the main surface of the semiconductor substrate so as to hermetically seal the micromechanical mechanism; And one end of the wiring conductor electrically connected to the electrode of the electronic component, the one end of the wiring conductor being connected to the main surface of the semiconductor substrate and the first surface of the insulating substrate. Since it is located on the outer side of the joining portion with one main surface, it is possible to suppress the electromagnetic coupling between the electrical connection path and the microelectromechanical mechanism and the influence of high frequency noise.

  According to the electronic component sealing substrate of the multi-cavity form according to the present invention, since there are a plurality of regions constituting the electronic component sealing substrate, the electrical connection path and the microelectromechanical mechanism It is possible to manufacture with high productivity an electronic device in which the effects of electromagnetic interference and high frequency noise are suppressed.

  According to the electronic device of the present invention, since the electronic component sealing substrate and the electronic component are provided, electromagnetic interference between the conductive bonding material and the microelectromechanical mechanism and the influence of high frequency noise are suppressed. An electronic device can be provided.

  According to the method for manufacturing an electronic device according to the present invention, a plurality of electronic component regions in which a microelectromechanical mechanism and electrodes electrically connected to the microelectromechanical mechanism are formed are formed on a semiconductor substrate. A step of preparing an electronic component substrate having a plurality of forms, a step of preparing a substrate for sealing an electronic component of a plurality of forms, each electrode of the electronic component substrate having a plurality of forms, and corresponding wiring conductors Electrically connecting one end of the semiconductor substrate, joining the main surface of the semiconductor substrate and one main surface of the insulating substrate, hermetically sealing the microelectromechanical mechanism, And a step of dividing the joined body with the electronic component sealing substrate in a multi-cavity form for each electronic component region, so that electromagnetic interference between the electrical connection path and the microelectromechanical mechanism, and The influence of high frequency noise was suppressed It is possible to manufacture the child device with a high productivity.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

(First embodiment)
FIG. 1A is a plan view showing a configuration example of an electronic device provided with an electronic component sealing substrate according to the first embodiment of the present invention, and FIG. 1B is a plan view of FIG. It is sectional drawing in the cut surface line II of the electronic device shown by FIG. As shown in FIGS. 1A and 1B, an electronic device 1 according to the present embodiment includes an electronic component sealing for sealing an electronic component 2 and a microelectromechanical mechanism 3 included in the electronic component 2. And a substrate 4 for use. The electronic component 2 includes a semiconductor substrate 5, a microelectromechanical mechanism 3 formed on the main surface of the semiconductor substrate 5, and an electrode 6 electrically connected to the microelectromechanical mechanism 3. The electronic component sealing substrate 4 is formed on the insulating substrate 7, the wiring conductor 8 formed on the insulating substrate 7, the connection pad 9 and the annular conductor pattern 10 formed on one main surface of the insulating substrate 7, and the connection pad 9. The conductive bonding material 11 and the sealing material 12 formed on the annular conductor pattern 10 are provided.

  The connection pad 9 on the insulating substrate 7 is electrically connected to the electrode 6 of the electronic component 2 through the conductive bonding material 11. The insulating substrate 7 is bonded to the main surface of the semiconductor substrate 5 via the annular conductor pattern 10 and the sealing material 12, and the micro electro mechanical mechanism 3 is hermetically sealed.

  By using the electronic component sealing substrate 4 to seal the micro electronic mechanical mechanism 3 of the electronic component 2, the electronic device 1 is formed in which the micro electronic mechanical mechanism 3 is sealed in an externally connectable state. Is done.

  The micro electromechanical mechanism 3 in the present invention includes, for example, an electric switch, an inductor, a capacitor, a resonator, an antenna, a micro relay, an optical switch, a magnetic head for a hard disk, a microphone, a biosensor, a DNA chip, a microreactor, a print head, an acceleration sensor, and the like. It is an electronic element having functions of various sensors such as a pressure sensor and a display device. This is a component made by a so-called micromachining method based on a semiconductor microfabrication technique, and has a size of about 10 μm to several hundred μm per element.

  The insulating substrate 7 functions as a lid for sealing the microelectromechanical mechanism 3 and also functions as a base for forming the connection pads 9 and the annular conductor pattern 10.

  The insulating substrate 7 is made of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, or a glass ceramic sintered body. It is formed.

  If the insulating substrate 7 is made of, for example, an aluminum oxide sintered body, the insulating substrate 7 is formed by laminating and firing a green sheet formed by forming a raw material powder such as aluminum oxide and glass powder on the sheet. . The insulating substrate 7 is not limited to being formed of an aluminum oxide sintered body, and it is preferable to select a substrate that is suitable for the application and the characteristics of the microelectromechanical mechanism 3 to be hermetically sealed.

  For example, since the insulating substrate 7 is mechanically bonded to the semiconductor substrate 5 via the sealing material 12, the reliability of bonding with the semiconductor substrate 5, that is, the hermeticity of sealing of the microelectromechanical mechanism 3 is increased. In order to achieve this, it is preferable to use a material having a small difference in thermal expansion coefficient from that of the semiconductor substrate 7. An example of such a material is a mullite sintered body. As another example, for example, a glass ceramic sintered body such as an aluminum oxide-borosilicate glass system in which the thermal expansion coefficient is approximated to the semiconductor substrate 5 by adjusting the kind and addition amount of the glass component, etc. It is done.

  Moreover, the glass ceramic sintered body obtained by sintering a glass containing a borosilicate glass system in an aluminum oxide filler can form a wiring conductor on the wiring conductor 8 with copper or silver having a low electric resistance, and has a low relative dielectric constant and electric power. Since the delay of a signal can be prevented, it is preferable as a material for the insulating substrate 7 that handles a high-frequency signal.

  The insulating substrate 7 has a shape as long as it has a function as a lid for sealing the micro electro mechanical mechanism 3 and a function as a base for forming the connection pads 9 and the annular conductor pattern 10. Is not particularly limited.

  In addition, a concave portion for accommodating the microelectromechanical mechanism 3 of the electronic component 2 on the upper surface of the insulating substrate 7 shown in FIG. 1, that is, the main surface of the insulating substrate 7 on the side where the microelectromechanical mechanism 3 is sealed. 13 may be formed. If a part of the micro electro mechanical mechanism 3 is accommodated in the recess 13, the height of the sealing material 12 for surrounding the micro electro mechanical mechanism 3 can be kept low, and the electronic device 1 can be reduced in height. It will be advantageous to. Further, the outer dimension of the insulating substrate 7 in plan view is preferably, for example, a quadrangular shape and the length of one side of the quadrilateral is about several mm in order to reduce the size of the electronic device 1.

  The annular conductor pattern 10 has a shape capable of accommodating the microelectromechanical mechanism 3 inside on the upper surface of the insulating substrate 7. The annular conductor pattern 10 functions as a brazing metal layer for joining the sealing material 12 that forms the sealing space of the micro electro mechanical mechanism 3.

  The annular conductor pattern 10 is formed of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, and manganese.

  For example, when the annular conductor pattern 10 is made of copper, an electrode paste in which an appropriate organic binder and a solvent are added to and mixed with copper powder and glass powder is printed on a green sheet to be the insulating substrate 7 by screen printing or the like. It is formed by firing together with a green sheet.

  The sealing material 12 is formed on the annular conductor pattern 10 so as to accommodate the micro electromechanical mechanism 3 inside thereof, and is interposed between the semiconductor substrate 5 and the insulating substrate 7.

  The sealing material 12 functions as a side wall for hermetically sealing the micro electro mechanical mechanism 3 of the electronic component 2 inside. Here, when the upper surface of the electronic component sealing substrate 4 is planar, the thickness of the sealing material 12 corresponds to the thickness of the sealing space of the micro electro mechanical mechanism 3, and therefore the micro electro mechanical mechanism has a simple structure. The sealing space can be formed.

  The sealing material 12 is, for example, a joining member such as a solder such as tin-silver and tin-silver-copper, a low melting point brazing material such as gold-tin brazing, and a high melting point brazing material such as silver-germanium. It is formed with a metal material known as a conductive adhesive such as an epoxy resin containing metal powder, or a resin material such as an epoxy resin adhesive.

  In addition, as the sealing material 12, an iron-nickel alloy such as an iron-nickel-cobalt alloy or an iron-nickel alloy, a metal material such as oxygen-free copper, aluminum, stainless steel, a copper-tungsten alloy, a copper-molybdenum alloy, Alternatively, an inorganic material such as an aluminum oxide sintered body and a glass ceramic sintered body is formed by forming a conductive film or the like using a metal layer such as Au, Ag, Cu, Al, Pt, or Pd using a plating method or the like. , Tin-silver-based, tin-silver-copper-based solder and the like can be used. Note that the sealing material 12 may be made of a conductive material or an insulating material.

  For example, if the sealing material 12 is made of solder, a solder paste is applied onto the annular conductor pattern 10 and heated to be bonded to each other, thereby sealing the annular conductor pattern 10 with solder. 12 can be formed.

  In the electronic device 1 shown in FIG. 1, the micro electro mechanical mechanism 3 is hermetically sealed inside the sealing material 12 by bonding the sealing material 12 to the lower surface of the semiconductor substrate 5.

  As a method for joining the sealing material 12 to the main surface of the semiconductor substrate 5, for example, a solder such as tin-silver solder, a low melting solder such as gold-tin solder, or a high melting solder such as silver-germanium, etc. It is possible to use a method of bonding via the bonding material.

  If the sealing material 12 is to be formed with solder applied on the annular conductor pattern 10, the annular conductor pattern 10 of the insulating substrate 7 and the semiconductor substrate 5 are aligned with each other via a solder paste, and this solder The insulating substrate 7 is mechanically bonded to the semiconductor substrate 5 through the sealing material 12 by melting the paste using means such as reflow. Inside the sealing material 12, a sealing space for hermetically sealing the micro electro mechanical mechanism 3 is formed.

  On the upper surface of the insulating substrate 7, connection pads 9 that are electrically connected to the electrodes 6 of the electronic component 2 are formed. In the electronic device 1 according to the present embodiment, the connection pad 9 is connected to a wiring conductor 8 formed inside the insulating substrate 7. The wiring conductor 8 is, for example, a through conductor formed so as to penetrate the insulating substrate 7 in the thickness direction, and the lower surface of the insulating substrate 7, that is, the main electromechanical mechanism 3 in the insulating substrate 7 is sealed. The main surface is opposed to the surface. The wiring conductor 8 may be led out to the side surface of the insulating substrate 7. Here, the wiring conductor 8 may be constituted by a via provided in the green sheet layer constituting the insulating substrate 7 after firing and an internal conductor formed between the layers of the green sheet layer.

  A mounting pad (not shown) is formed on the end portion of the wiring conductor 2 led out to the lower surface or side surface of the insulating substrate 7, and the mounting pad is used as an external electric circuit, for example, a solder bump made of tin-lead solder or the like. The electrode 6 of the electronic component 2 is electrically connected to the external electric circuit by bonding through the external terminal 17 such as.

  The wiring conductor 8 and the connection pad 9 are electrically connected to the electrode 6 of the electronic component 2 through a conductive bonding material 11 formed on the connection pad 9. The wiring conductor 8 and the connection pad 9 have a function of leading the electrode 6 to the lower surface or side surface of the insulating substrate 7 so that it can be electrically connected to an external electric circuit.

  The conductive bonding material 11 is a metal material such as a solder such as tin-silver, tin-silver-copper, a low-melting-point brazing material such as gold-tin brazing, and a high-melting-point brazing material such as silver-germanium. In addition, it is formed of a conductive adhesive such as an epoxy resin containing metal powder.

  In the conductive bonding material 11, the sealing material 12 is made of solder such as tin-silver, tin-silver-copper, low melting point solder such as gold-tin solder, and high melting point solder such as silver-germanium. When formed of such a metal material or the like, it can be formed together with the sealing material 12 by vacuum deposition or plating, or by applying and melting a brazing material paste. Thereby, the productivity of the electronic device 1 can be made higher.

  By bonding the conductive bonding material 11 to the electrode 6 of the electronic component 2, the electrode 6 of the electronic component 2 is connected to the lower surface or side surface of the insulating substrate 7 via the conductive bonding material 11, the connection pad 9 and the wiring conductor 8. To be derived. Then, the end of the wiring conductor 8 led to the lower surface or side surface of the insulating substrate 7 is joined to the external electric circuit via tin-lead solder or the like, whereby the electrode 6 of the electronic component 2 and the external electric circuit are electrically connected. Connected.

  These wiring conductors 8 and connection pads 9 are formed of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, and manganese.

  For example, when the wiring conductor 8 is made of copper, a copper paste obtained by adding and mixing copper powder and glass powder with an appropriate organic binder and solvent is printed on the green sheet to be the insulating substrate 7 by screen printing or the like, and then the green sheet is printed. It is formed by baking together.

  As described above, the upper surface of the insulating substrate 7 that constitutes the electronic component sealing substrate 4 and the lower surface of the semiconductor substrate 9 that constitutes the electronic component 2 face each other, and are aligned and joined to each other to form microelectronics. The mechanical mechanism 3 is sealed. That is, the insulating substrate 7 and the semiconductor substrate 5 are joined via the sealing material 12 interposed between the annular conductor pattern 10 and the semiconductor substrate 5, and the micro electro mechanical mechanism 3 is hermetically sealed inside the sealing material 12. Stopped. The electrode 6 electrically connected to the microelectromechanical mechanism 3 is led out of the sealed space through the conductive bonding material 11, the connection pad 9, and the wiring conductor 8, and is electrically connected to an external electric circuit. The This makes it possible to input and output signals between the micro electromechanical mechanism 3 and the external electric circuit. These signals are transmitted along the electrode 6, the conductive bonding material 11, the connection pad 9, and the wiring conductor 8 between the micro electromechanical mechanism 3 and the external electric circuit.

  In the electronic component sealing substrate 4, the connection pads 9 are formed outside the annular conductor pattern 10. Since the connection pad 9 is disposed outside the annular conductor pattern 10 for depositing the sealing material 12, the connection pad 9 and the minute electromechanical mechanism 3 are separated by the annular conductor pattern 10. The distance can be increased, and electromagnetic interference between the connection pad 9 and the microelectromechanical mechanism 3 is suppressed. Therefore, for example, when a driving voltage is applied to the microelectromechanical mechanism 3 through the conductive bonding material 11, the influence of electromagnetic interference generated by turning on and off the driving voltage affects the operation of the microelectromechanical mechanism 3. This can be suppressed.

  Further, when conducting a high frequency signal to the conductive bonding material 11, a magnetic field or an electric field necessary for driving the micro electro mechanical mechanism 3 becomes noise, and the high frequency signal that conducts the conductive bonding material 11. It is also possible to suppress the deterioration of the characteristics.

  Therefore, it is possible to provide the electronic component sealing substrate 4 capable of suppressing the influence of high frequency noise between the conductive bonding material 11 and the micro electro mechanical mechanism 3.

  Here, the sealing material 12 is for sealing the microelectromechanical mechanism 3, and the annular conductive pattern 10 for depositing the sealing material 12 is formed on the insulating substrate 7. Therefore, the electronic component sealing substrate 4 can easily and reliably seal the micro electro mechanical mechanism 3 through the sealing material 12.

  In the electronic component sealing substrate 4, a conductor layer to which a reference potential is supplied may be formed inside the insulating substrate 7. In FIG. 1, a conductor layer (hereinafter referred to as “ground conductor layer”) 14 to which a ground potential is supplied is formed inside the insulating substrate 7. When the ground conductor layer 14 is formed inside the insulating substrate 7, it is possible to shield noise from the outside. Similarly, by forming a shield conductor layer on the upper surface of the semiconductor substrate 5, it is possible to further shield external noise.

  The ground conductor layer 14 is formed using the same material and method as the wiring conductor 8 and the connection pad 9. For example, when the ground conductor layer 14 is formed of copper, an electrode paste in which an appropriate organic binder and solvent are added and mixed with copper powder and glass powder is printed on a green sheet to be the insulating substrate 7 by screen printing or the like. It is formed by firing together with a green sheet.

  When the ground conductor layer 14 is disposed inside the insulating base 1, electromagnetic waves that try to enter the region sealed with the sealing material 12 through the electronic component sealing substrate 4 are effectively transmitted by the ground conductor layer 14. Blocked. Therefore, it is possible to shield noise that tries to enter the sealed region of the micro electro mechanical mechanism 3 from the outside. As a result, the electronic component 2 on which the micro electromechanical mechanism 3 is mounted can be operated more normally and stably.

  Then, for the electronic component 2 in which the microelectromechanical mechanism 3 and the electrode 6 electrically connected thereto are formed on the main surface (lower surface in FIG. 1) of the semiconductor substrate 5, the electrode 6 is bonded to the connection pad 9. By bonding the main surface of the semiconductor substrate 5 to the sealing material 12, the electronic device 1 in which the microelectromechanical mechanism 3 of the electronic component 2 is hermetically sealed inside the sealing material 12 is formed.

  In the electronic device 1 according to the present embodiment, the electrode 6 and the connection pad 9 formed on the lower surface of the semiconductor substrate 5 are disposed outside the sealed space that houses the micro electro mechanical mechanism 3 via the conductive bonding material 11. Therefore, the conductive bonding material 11 and the microelectromechanical mechanism 3 can be separated by a distance separated by the annular conductor pattern 10. As a result, when an on / off voltage of the driving voltage is supplied through the conductive bonding material 11, the electromagnetic interference of the on / off of the driving voltage is prevented from affecting the operation of the microelectromechanical mechanism 3. Can do.

  Further, when a high-frequency signal is conducted to the conductive bonding material 11, on / off of a magnetic field or an electric field necessary for driving the microelectromechanical mechanism 3 becomes noise, and the high frequency that conducts the conductive bonding material 11. It can suppress that the characteristic of a signal deteriorates.

  Here, the sealing material 12 is formed of a conductive material, and is electrically connected to the ground conductor layer 14 of the electronic component sealing substrate 4, or the through conductor provided on the electronic component sealing substrate 4 The wiring conductor 8 (shown as the wiring conductor 8a in FIG. 1) is preferably connected to the ground wiring of a printed wiring board (not shown) on which the electronic component sealing substrate 4 is mounted.

  Thus, the sealing material 12 is made of a conductive material, and this is joined to the ground conductor layer of the electronic component sealing substrate 4 or the ground conductor layer in the printed wiring board on which the electronic component sealing substrate 4 is mounted. As a result, a stable ground network is formed between the sealing material 12 and the ground conductor layer, and the sealing material 12 can have good electromagnetic shielding properties. As a result, the electronic component 2 on which the microelectromechanical mechanism 3 is formed can be operated more reliably and normally and stably.

  Here, the sealing material 12 is electrically connected to one or both of the ground conductor layer 14 in the electronic component sealing substrate 4 and the ground conductor layer of the printed wiring board on which the electronic component sealing substrate 4 is mounted. May be connected.

  When the sealing material 12 is formed of a conductive material, examples of the conductive material include solder such as tin-silver and tin-silver-copper, low-melting-point solder such as gold-tin, and silver-germanium. A metal material such as a high melting point brazing material can be used. And when it forms with such a material, the sealing material 12 and the electroconductive joining material 11 can be formed simultaneously.

  Further, the sealing material 12 and the conductive bonding material 11 may be formed of the same brazing material. When the sealing material 12 and the conductive bonding material 11 are formed from the same material, the conductive bonding material 11 and the sealing material 12 are collectively formed by vacuum deposition or plating, or by applying and melting a solder paste. be able to. As a result, productivity can be made higher.

  Further, the sealing material 12 is formed of a conductive material, and the sealing material 12 is electrically connected to the ground terminal of the external printed wiring board via the wiring conductor 8a provided on the electronic component sealing substrate 4. In the case of connection, a plurality of wiring conductors 8a are provided inside the insulating substrate 7, and the adjacent interval between the plurality of wiring conductors 8a is a high-frequency signal that is used in the electronic component 2 (several hundreds of MHz to 100 GHz, particularly a high frequency in the GHz band). It is preferable to set it to ½ or less of the wavelength of the signal.

  With such a configuration, high-frequency noise does not enter the region surrounded by the wiring conductor 8a, and the propagation mode mismatch induced by the instability of the high-frequency ground is reduced. In addition, since the sealing material 12 made of a conductive material and the ground conductor layer 14 are directly electrically connected, the ground network path is shortened and an increase in inductance component can be prevented, so that a stable ground is obtained. And good electromagnetic shielding properties can be maintained. Therefore, the micro electromechanical mechanism 3 is less susceptible to high frequency noise entering from the outside.

  Therefore, for example, even if the signal used is a high-frequency signal as described above, an accurate signal is always propagated through the wiring conductor 8, and the electronic component 2 that is driven at high speed is used. Can be operated more normally and stably.

  The wiring conductor 15 formed on the semiconductor substrate 5 functions as a wiring that conducts a signal between the electrode 6 and the microelectromechanical mechanism 3. When the sealing material 12 is made of a conductive material, an insulating film 16 such as a silicon oxide film is formed on the wiring conductor 15 so as not to cause a short circuit between the sealing material 12 and the wiring conductor 15. It is good to keep.

  In the electronic device 1 having the above-described configuration, the micro electro mechanical mechanism 3 is electrically connected to the external electric circuit by connecting the lead-out portion of the wiring conductor 8 to the external electric circuit via the external terminal 17 such as a solder ball. Is done.

  When the connection between the external electric circuit and the electronic device 1 is performed using a solder ball or the like, the connection between the external electric circuit and the electronic device 1 is performed at a temperature lower than the bonding temperature between the semiconductor substrate 5 and the electronic component sealing substrate 4. This is desirable from the viewpoint of reliability in bonding between the semiconductor substrate 5 and the electronic component sealing substrate 8.

  In addition, as shown in FIG. 2, a resin material is provided so that the conductive bonding material 11 is covered outside the sealing material 12 between the lower surface of the semiconductor substrate 5 and the upper surface of the electronic component sealing substrate 7. 18 may be filled. When the resin material 18 is filled, the resin is filled with the thermal stress due to the difference in thermal expansion coefficient between the semiconductor substrate 5 and the electronic component sealing substrate 7, and excessive stress is transferred to the conductive bonding material 11 and the sealing material. It is possible to prevent the stopper 12 from being applied. Moreover, as a result of suppressing the intrusion of moisture, it is possible to effectively suppress the occurrence of cracks in the conductive bonding material 11 and the sealing material 12 or the corrosion of the conductive bonding material 11 and the sealing material 12. it can. As a result, the reliability of the electronic device can be further increased.

  Similarly, as shown in FIG. 2, a shield conductor layer 19 may be formed on the upper surface of the semiconductor substrate 5. In this case, an electromagnetic wave that attempts to enter the region where the micro electro mechanical mechanism 3 is sealed through the semiconductor substrate 5 is effectively blocked by the shield conductor layer 19. Therefore, noise from the outside can be shielded, and the electronic component 2 on which the micro electromechanical mechanism 3 is mounted can be operated more normally and stably. Here, the shield conductor layer 19 is a metal layer provided on the semiconductor substrate 5, and is formed on the semiconductor substrate 5 by vapor deposition or the like, for example.

  As described above, the electronic component sealing substrate 4 constituting the electronic device 1 is preferably provided with the recess 13 on the upper surface, and the micro electromechanical mechanism 3 is accommodated in the recess 13.

  In this case, the thickness of the electronic device 1 corresponding to the height of the micro electro mechanical mechanism 3 can be reduced. As a result, for example, a reduction in the height of the electronic device 1 required in the mobile market or the like can be realized.

  In such an electronic device 1, it is preferable that the electronic component sealing substrate 4 has a planar upper surface and a sealing space set to a thickness corresponding to the thickness of the sealing material 12.

  In this case, it is possible to form the sealed space of the micro electro mechanical mechanism 3 with a simple structure. As a result, the productivity of the electronic component sealing substrate 4 and the electronic device 1 can be further increased.

  FIG. 3 is a cross-sectional view showing a configuration example when a plurality of electronic component sealing substrates according to the present embodiment are formed. As shown in FIG. 3, the wiring board can be formed in a so-called multiple-chip form in which the board region including the connection pads 9 and the sealing material 12 is arranged vertically and horizontally on one main surface of the large-area mother board. Good.

  In such a multi-cavity configuration, a multi-electromechanical mechanism 3 and a plurality of electrodes 6 electrically connected to the main surface of the semiconductor substrate 5 are arrayed and manufactured in a multi-cavity configuration. A plurality of semiconductor mother substrates can be hermetically sealed at the same time, and the productivity can be improved.

  Next, a method for manufacturing an electronic device using the electronic component sealing substrate 4 will be described with reference to FIGS. 4A to 4D show an example of a method of manufacturing an electronic device according to this embodiment in the order of steps. 4A to 4D, the same components as those in FIGS. 1 and 3 are denoted by the same reference numerals. For the sake of simplicity, a part of the configuration shown in FIGS. 1 and 3 such as the ground conductor layer 14 is omitted.

  First, as shown in FIG. 4A, a semiconductor mother substrate 21 having a plurality of microelectromechanical mechanisms 3 arranged vertically and horizontally on its lower surface is prepared. Electrodes 6 are provided on the lower surface of the semiconductor mother substrate 21 so as to correspond to the microelectromechanical mechanisms 3. The semiconductor mother substrate 21 is a semiconductor substrate in which a plurality of electronic component regions 22 each having a micro electro mechanical mechanism 3 and an electrode 6 are formed.

  Next, as shown in FIG. 4B, a wiring mother board 23 is prepared. The wiring mother board 23 has a plurality of board regions 24 corresponding to the micro electro mechanical mechanism 3.

  Each of the substrate regions 24 is a region that becomes the electronic component sealing substrate 4. For each region that becomes the electronic component sealing substrate 4 on one main surface, the annular conductor pattern 10 and the outside of the annular conductor pattern 10 are provided. Connection pads 9 located on the opposite sides are respectively formed. The connection pad 9 is electrically connected to the wiring conductor 8 led out from one main surface of the insulating substrate 7 to the other main surface or side surface.

  In the electronic device according to the present embodiment, a sealing material 12 is formed on the annular conductor pattern 10 in advance, and a conductive connection material 11 is formed on the connection pad 9. If it does in this way, since it becomes easy to perform mechanical joining (sealing) by the sealing material 12 and electrical connection by the electroconductive joining material 11 simultaneously, the operation | work of sealing of an electronic component Can be improved.

  The sealing material 12 is formed on the annular conductor pattern 10. Further, if the sealing material 12 is made of, for example, an iron-nickel-cobalt alloy, the metal plate of the iron-nickel-cobalt alloy is subjected to a rolling process, a punching process using a mold, or an etching process to form an annular conductor pattern. It is manufactured by molding into

  The sealing material 12 and the insulating substrate 7 can be joined via a solder such as tin-silver solder, a low-melting solder such as gold-tin solder, or a high-melting solder such as silver-germanium. it can.

  The sealing material 12 may be formed using a solder such as tin-silver solder, a low melting point solder such as gold-tin solder, and a high melting point solder such as silver-germanium.

  The conductive bonding material 11 is formed on the connection pad 9. If the conductive bonding material 11 is made of, for example, a tin-silver solder, the conductive bonding material 11 is formed by positioning, heating, melting, and bonding the solder balls on the connection pads 9. Further, when the conductive bonding material 11 is formed from the same material as the sealing material 12, the conductive bonding material 11 may be formed together with the sealing material 12.

  Next, the bonded body 25 is formed by bonding the semiconductor mother board 21 on the wiring mother board 23 via the sealing material 12 that hermetically seals the micro electro mechanical mechanism 3 for each of the substrate regions 24. To do.

  The joined body 25 is formed in a form in which a plurality of electronic devices 1 are formed. In the joined body 25, the microelectromechanical mechanisms 3 arranged vertically and horizontally include the sealing material 12 in each substrate region 24. Is hermetically sealed in the inner sealing space.

  Further, the electrodes 6 arranged corresponding to the respective micro electro mechanical mechanisms 3 are electrically connected to the corresponding connection pads 9 through the conductive bonding material 11.

  Here, the electrode 6 and the conductive bonding material 11 are bonded, for example, when the conductive bonding material 11 is made of tin-silver solder and the height of the conductive bonding material 11 and the sealing material 12 is the same. The conductive bonding material 11 is positioned and placed on 6 and heat-treated at a temperature of about 250 to 300 ° C. in a reflow furnace.

  Here, for joining the main surface of the semiconductor substrate 5 and the sealing material 12, for example, the same tin-silver solder as the conductive joint material 11 is sandwiched between the joint surfaces, and the above-described electrode 6 and the conductive joint are joined. It can be performed by heat treatment in a reflow furnace simultaneously with the joining with the material 11. Further, when the conductive bonding material 11 is made of tin-silver solder and the height of the conductive bonding material 11 and the sealing material 12 varies, or the wiring mother board 23 is warped, the semiconductor mother The connection between the substrate 21 and the wiring motherboard 23 can be performed by thermocompression bonding at a temperature of about 220 ° C. to 280 ° C.

  As described above, according to the method for manufacturing the electronic device 1 according to the present embodiment, the bonding for leading out the electrode 6 in the electronic component region 22 and the bonding for hermetic sealing of the microelectromechanical mechanism 3 are performed. Since it can be performed simultaneously, the productivity of the electronic device 1 can be greatly increased.

  Then, as illustrated in FIG. 4D, the joined body 25 is divided for each electronic component sealing region 22 to obtain the electronic device 1.

  As described above, the electronic device 1 manufactured in this way is connected to the annular conductor pattern 10 and the connection located outside the annular conductor pattern 10 on the upper surface of the substrate region 24 to be the electronic component sealing substrate 4 as described above. The semiconductor mother substrate 21 is sealed using the wiring mother substrate 23 on which the pads 9 are formed. In addition, a plurality of electronic devices 1 can be obtained simultaneously and collectively. Therefore, the electronic device 1 in which electromagnetic interference between the microelectromechanical mechanism 10, the connection pad 9, and the conductive bonding material 11 is suppressed can be manufactured with good productivity.

  The joined body 25 can be cut by subjecting the joined body 25 to a cutting process such as dicing. Here, when the conductive bonding material 11 is formed outside the sealing material 12 that hermetically seals the micro electro mechanical mechanism 3, the micro electro mechanical mechanism 3 and the electronic component sealing substrate 4 It is possible to inspect the conductive bonding material 11 for bonding. As a result, it is not necessary to perform an X-ray bonding inspection or the like as in the case where the conductive bonding material 11 is formed inside the sealing material 12.

Further, even when the conductive bonding material 11 is composed of solder balls and the molten solder may protrude outside the electrode 6, the solder is blocked by the sealing material 12. Reaching is prevented. Therefore, it is possible to effectively prevent the mechanical operation of the micro electromechanical mechanism 3 from being hindered by the solder and the reliability of the electrical operation from being lowered. Since the manufacturing method of the electronic device 1 according to the present embodiment includes the above-described steps, the micro electro mechanical mechanism 3 is arranged for a plurality of micro electro mechanical mechanisms 3 arranged vertically and horizontally. The wiring mother board 23 having a plurality of board regions 24 corresponding to the above can be simultaneously hermetically sealed. Therefore, the joined body 25 including the semiconductor mother substrate 21 and the wiring mother substrate 23 bonded to each other can be easily manufactured. Since this joined body 25 is divided into individual electronic devices 1 by being divided along each substrate region 24, a plurality of electronic devices 1 can be reliably manufactured with high productivity.

  In addition, since the conductive bonding material 11 is formed outside the sealing material 12 that hermetically seals the micro-electromechanical mechanism 3, the appearance inspection is performed between the electrode 6 and the electronic component sealing substrate 4. It is possible to determine whether the electrical connection is reliably made. Further, it is possible to prevent the connecting material forming the conductive bonding material 11 from flowing into the micro electro mechanical mechanism 3.

  In the above description, one micro electro mechanical mechanism 3 is hermetically sealed in one electronic device 1, but a plurality of micro electro mechanical mechanisms 3 may be hermetically sealed in one electronic device 1. In the example shown in FIG. 4, the wiring conductor 8 is led out to the lower surface side of the insulating substrate 7, but it may be led out to the side surface or to both the side surface and the lower surface. In the example of FIG. 4, an example in which a concave portion (cavity) for accommodating the micro electro mechanical mechanism 3 is shown, but the concave portion is not necessarily formed, and the height of the sealing material 12 is set appropriately. However, a sealed space required by the microelectromechanical mechanism 3 may be formed.

  Further, the electrical connection of the wiring conductor 8 to an external electric circuit is not limited to being performed via a solder ball as the external terminal 17 but may be performed via a lead terminal or a conductive adhesive.

  In the above description, a substrate made of a ceramic material is used as the insulating substrate 7. However, a substrate made of another material such as resin and glass may be used. Further, in the above description, the semiconductor substrate 5 and the insulating substrate 7 are joined via the annular conductor pattern 10 and the sealing material 12 in order to hermetically seal the micro electro mechanical mechanism 3. If it can join with 7, it will not restrict to this. For example, the semiconductor substrate 5 and the insulating substrate 7 may be directly bonded by anodic bonding using the insulating substrate 7 made of glass.

(Second Embodiment)
Next, a second embodiment of the present invention will be described.

 The electronic component sealing substrate according to the second embodiment of the present invention is different from the electronic component sealing device according to the first embodiment in that an oscillation circuit is built in the insulating substrate 7. . FIG. 5 is a cross-sectional view showing a configuration example of an electronic device including an electronic component sealing substrate according to the second embodiment of the present invention. In the electronic device 31 shown in FIG. 5, a pair of capacitance forming electrodes 33 and capacitance forming electrodes 33 electrically connected to the connection pads 9 are provided in the insulating substrate 7 constituting the electronic component sealing substrate 32. And a resistor 34 electrically connected to each other. The capacitance forming electrodes 33 are arranged to face each other, and each capacitance forming electrode 33 and a part of the insulating substrate 7 interposed between them (hereinafter referred to as “insulating layer 35”) are capacitors ( Capacitor component). The capacitor and the resistor 34 constitute a CR oscillation circuit. In FIG. 5, the same components as those shown in FIGS. 1 to 4 are denoted by the same reference numerals, and description thereof is omitted.

  This CR oscillation circuit has a function of placing an electric signal detected by the micro electromechanical mechanism 3 on a high frequency signal and transmitting it as a radio wave. That is, this CR oscillation circuit generates a high frequency (carrier wave) that carries the signal carried by the microelectromechanical mechanism 3 as a sensor and carries the air. This carrier wave is transmitted to the outside as a radio wave via a transmitting device (not shown) such as an antenna.

  According to the electronic component sealing substrate 32 according to the present embodiment, since the CR oscillation circuit is formed in the insulating substrate 7, a capacitor and a resistor are separately mounted on the electronic component sealing substrate 32 as chip components. No wiring or conductive bonding material is required. Therefore, signal transmission loss can be reduced, and low power consumption can be achieved. Therefore, it is possible to obtain the electronic component sealing substrate 32 and the electronic device 31 that can improve the driving accuracy of the micro-electromechanical mechanism 3, improve the response accuracy of the electronic device 21, and increase the driving time.

  Further, since a space for mounting chip components necessary for the external electric circuit board is not required, a smaller module can be formed. This contributes to downsizing of the entire device and low power consumption. In addition, since it is possible to mount other circuits, components, etc. in the space that is no longer needed, it is possible to increase the functionality and density of the device.

  Further, since the oscillation circuit is formed in the insulating substrate 7, there is no discontinuous portion of the conductive path such as a connection portion between the connection terminal electrode of the chip capacitor or the chip resistance component and the conductive bonding material. The generation of electromagnetic noise can be suppressed. Thereby, electromagnetic interference to the micro electro mechanical mechanism 3 and other circuit boards can be minimized. Therefore, it is possible to obtain the electronic device 31 with high response accuracy that can drive the high-precision microelectromechanical mechanism 3 with high accuracy.

  The electrical connection between the resistor 34 and the capacitance forming electrode 33 can be performed, for example, by bringing parts of the resistor 34 and the capacitance forming electrode 33 into direct contact with each other.

  The resistor 34 can be electrically connected to the connection pad 9 via a part of the wiring conductor 8 such as a via conductor, and the capacitance forming electrode 33 is connected via the wiring conductor 8 and the resistor 34. The connection pad 9 can be electrically connected.

  The capacitance forming electrode 33 is made of the same material as that of the wiring conductor 8 and the connection pad 9 by the same means. The conductor pattern as the pair of capacitance forming electrodes 33 is configured such that, for example, a rectangular or circular conductor pattern overlaps vertically. In this case, the outer peripheral edge of one conductor pattern is the other conductor pattern so that the opposing area is kept constant even when the stacking position shifts in the green sheet or the like serving as the insulating substrate 7. You may set so that it may be located outside the outer periphery.

  The capacitance of the capacitor formed by the capacitance forming electrode 33 and the insulating layer 35 is preferably about 0.5 pF to 50 nF. When it is larger than 0.5 pF, it becomes difficult to be affected by tolerances when the capacitor is manufactured. On the other hand, when it is smaller than 50 nF, it is easy to downsize and manufacture.

  The insulating layer 35 interposed between the pair of capacitance forming electrodes 33 is a part of the insulating substrate 7. For example, an insulating material (dielectric material) similar to the insulating material forming other portions of the insulating substrate 7 is used. It is formed by.

  The resistor 34 is electrically connected to the capacitor forming electrode 33. The resistor 34 is made of ruthenium oxide, silver palladium, or the like. As this formation means, means for depositing a metal as a thin film layer, such as metallization layer formation means, plating layer formation means, and vapor deposition film formation means, can be used. For example, in the case where the resistor 34 is formed by a metallized layer forming means, it is formed by printing a ruthenium oxide paste on a green sheet to be the insulating substrate 7, laminating it, and firing it together with the green sheet. The

  The electrical resistance of the resistor 34 is preferably about 10Ω to 100kΩ. When the electric resistance is larger than 10Ω, it becomes difficult to be affected by tolerance when the resistor 34 is manufactured. When the electric resistance is less than 100 kΩ, the size can be easily reduced and the manufacturing can be facilitated.

  As described above, by connecting the lead-out portion of the wiring conductor 8 in the electronic component sealing substrate 32 to an external electric circuit via the external terminal 17 such as a solder ball, the microelectromechanical mechanism 3 is connected to the external electric circuit. Electrically connected to the circuit. That is, external information such as mechanical vibration detected by the microelectromechanical mechanism 3 and converted into an electric signal is converted into a carrier wave by an oscillation circuit constituted by the capacitance forming electrode 33 and the resistor 34, This carrier wave is supplied to an external electric circuit. For example, an amplifier, a filter, an antenna, and the like are provided in the external electric circuit, and radio waves corresponding to the carrier wave are transmitted by these.

  In the electronic component sealing substrate 32, it is preferable that the dielectric constant of the insulating layer 35 disposed between the pair of capacitance forming electrodes 33 is higher than the dielectric constant of the insulating substrate 7 in other portions.

  In this way, by making the relative dielectric constant in the insulating substrate 7 a portion interposed between at least the pair of capacitance forming electrodes 33, that is, in the insulating layer 35, is higher than the relative dielectric constant in other portions. The capacitance generated between the capacitance forming electrodes 33 can be increased according to the difference in relative dielectric constant.

  In general, the oscillation frequency of the CR oscillation circuit can widen the oscillation frequency band when the C value (capacitance) increases. Therefore, the CR oscillation circuit having a large-capacitance capacitor is provided in the insulating substrate 7. Thus, an oscillation circuit with good oscillation efficiency can be formed.

  Therefore, by making the dielectric constant of the insulating layer 35 higher in the insulating substrate 7 than in other portions, a CR oscillation circuit having a larger capacity capacitor can be built in the insulating substrate 7 even in the same area. This contributes to further downsizing and low power consumption of equipment using the electronic device 32.

  For example, when the insulating substrate 7 is made of aluminum oxide and the relative dielectric constant is 10, and the relative dielectric constant of the insulating layer 35 is 10, the oscillation frequency band is about 1 kHz. When the dielectric constant of the insulating layer 35 is set to 1000, the band is about 3 times as high as about 3 kHz, so that an oscillation circuit with good oscillation efficiency can be formed.

The insulating layer 35 having a high relative dielectric constant is formed by, for example, printing and forming a dielectric layer paste composed of dielectric powder, a sintering aid, an organic resin binder, and an organic solvent, thereby forming other portions of the insulating substrate 7. It is produced by cofiring with the layer to be made. Examples of the dielectric powder include those having a perovskite structure such as SrTiO ₃ , MgTiO ₃ , and BaZrO _{3 in} addition to BaTiO ₃ .

Examples of the sintering aid include SiO ₂ —B ₂ O ₃ system, SiO ₂ —B ₂ O ₃ —Al ₂ O ₃ system, SiO ₂ —B ₂ O ₃ —Al ₂ O ₃ —MO system (however, M Represents Ca, Sr, Mg, Ba or Zn) SiO ₂ —B ₂ O ₃ —M1 ₂ O system (where M1 represents Li, Na or K), SiO ₂ —B ₂ O ₃ —Al ₂ O Examples thereof include _3- M2 ₂ O-based (wherein M2 is the same as above), Pb-based glass, Bi-based glass and the like, or metal oxides such as CuO.

  The organic resin binder and the organic solvent used for the dielectric layer paste are not particularly limited as long as they can be simultaneously fired with the ceramic green sheet serving as the insulating substrate 7. For example, the organic compound mixed in the green sheet The same resin binder and organic solvent can be used.

  In this case, the capacitance forming electrode 33 includes 85 to 99.5 parts by mass of Cu or Ag powder, 0.5 to 15 parts by mass of crystallized glass for depositing barium titanate crystals, an organic resin binder, and an organic resin. It is produced by printing an electrode paste containing a solvent and co-firing with a green sheet.

  The composition ratio of the crystallized glass on which the barium titanate crystal is precipitated is such that the interface between the dielectric layer 7 constituting the insulating substrate 7 and the wiring conductor 8 does not peel off during firing, relative to the Cu or Ag powder. A minimum ratio is preferred. When the glass composition ratio of the crystallized glass is less than 15 parts by mass with respect to the Cu or Ag powder, a large amount of the glass component of the capacitance forming electrode 33 flows into the insulating layer 35 during firing, and the characteristics of the insulating layer 35 are improved. Deterioration can be prevented. On the other hand, when the glass composition ratio of the crystallized glass exceeds 0.5 parts by mass, the crystallized glass improves the wettability with BaTiO3, and at the interface between the insulating layer 35 and the capacity forming electrode 33 during firing. Peeling is less likely to occur.

  When the Cu or Ag powder is used as the wiring conductor 8 for the insulating substrate 7, a particle having a diameter of 5 μm or less is used to suppress mutual diffusion between the components of the insulating substrate 7 and the components of the insulating layer 35 during simultaneous firing. It is preferable that the diameter is small.

The crystallized glass is one in which BaO and TiO ₂ are bonded during the crystallization to precipitate BaTiO ₃ crystals. Since BaTiO ₃ crystals are precipitated as the main phase, even if the crystallized glass flows into the insulating layer 35 due to diffusion during firing, the characteristics of the insulating layer 35 are not deteriorated.

  In addition, the addition of crystallized glass to the capacitor forming electrode 33 improves the wettability between the insulating layer 35 and the capacitor forming electrode 33, and prevents the occurrence of peeling at the interface during firing.

The crystallized glass in that case has a glass composition ratio of 55.1 to 59.7% by mass of BaO, 24.0 to 26.0% by mass of TiO _2, and 7.7 to 11.3% by mass of SiO _2. %, Al ₂ O ₃ 6.6 to 9.7 mass%, SrO 0.7 mass% or less, Na ₂ O 0.5 mass% or less, CaO 0.4 mass% or less, It adjusts so that the sum total of each component may be 100 mass%. Since TiO ₂ , SiO ₂ , Al ₂ O ₃ , SrO, Na ₂ O, and CaO are network-forming oxides, intermediate oxides, and network-modified oxides for vitrification, the minimum ratio for vitrification It is preferable that When BaO is 59.7% by mass or less, TiO ₂ is 26.0% by mass or less, SiO ₂ is 7.7% by mass or less, and Al ₂ O ₃ is more than 6.6% by mass, this composition is vitrified. It becomes easy. Further, BaO exceeds 55.1 wt%, TiO ₂ exceeds 24.0 mass%, SiO ₂ exceeds 11.3 wt%, _Al 2 _{O 3} is less than 9.7 wt%, SrO 0. When less than 7% by mass, Na ₂ O is less than 0.5% by mass, and CaO is less than 0.4% by mass, the inflow amount of components other than BaO and TiO ₂ into the insulating substrate 7 is suppressed. 7 can be prevented from being deteriorated.

Further, as a glass for precipitating a crystal having a high dielectric constant, there is a glass for depositing NaNb ₂ O ₅ in addition to that for precipitating BaTiO ₃ , but the glass contained in the electrode paste is composed of the crystal phase of the insulating plate 1. Those that precipitate the same crystal phase are preferred. That is, if the main component of the insulating layer 35 is BaTiO ₃ , crystallized glass that precipitates BaTiO _3, and if the main component of the insulating layer 35 is NaNb ₂ O ₅ , crystallized glass that precipitates NaNb ₂ O ₅ is used for the electrode paste. It is preferable to use it as an additive.

  The dielectric constant of the insulating layer 35 is preferably about 50 to 5000. When the relative dielectric constant is 50 or more, the capacitor component does not become too small, and when the relative dielectric constant is 5000 or less, simultaneous firing with the insulating substrate 7 becomes easy.

In addition, the resistor 34 is disposed immediately below the connection pad 9 inside the insulating substrate 7.
The distance between the capacitance forming electrode 33 and the connection pad 9 is preferably longer than the distance between the resistor 34 and the connection pad 9. Note that the distance between the capacitor forming electrode 33 and the connection pad 9 is a straight line distance connecting the capacitor forming electrode 33 and the connection pad 9 in the shortest distance, and between the resistor 34 and the connection pad 9. The distance is a linear distance that connects the resistor 34 and the connection pad 9 in the shortest distance.

  By disposing the resistor 34 inside the insulating substrate 7 immediately below the connection pad 9, the wiring length between the CR oscillation circuit and the connection pad 9 can be further shortened. Therefore, since the electrical resistance between the resistor 34 and the connection pad 9 can be further reduced, the transmission loss can be further reduced. As a result, the electronic device 31 can be driven with higher accuracy, response accuracy can be improved, and driving time can be extended by reducing power consumption.

  At the same time, the capacitance forming electrode 33 is electrically connected via the connection pad 9 and the electrode 6 because the distance between the capacitance forming electrode 33 and the connection pad 9 is longer than that of the resistor 34 disposed immediately below the connection pad 9. It is possible to increase the distance from the microelectromechanical mechanism 3 to be connected to each other.

  For this reason, the oscillation noise generated from the capacitor formed by the capacitance forming electrode 33 causes as much interference as possible to the micro-electromechanical mechanism 3, particularly mechanical interference such as obstruction of mechanical operation such as vibration of the acceleration sensor. Can be small. As a result, it is possible to prevent the micro-electromechanical mechanism 3 from being broken or deformed due to a problem in high accuracy driving and improvement in response accuracy due to oscillation noise.

  That is, with this configuration, it is possible to seal the electronic component 2 including the microelectromechanical mechanism 3 with mechanical operation with extremely high reliability of operation such as sensing.

  When the distance between the capacitor forming electrode 33 and the connection pad 9 is longer than the distance between the resistor 34 and the connection pad 9, the connection from the resistor 34 to the capacitor forming electrode 33 is performed. By forming a conductor (not shown) by the same means as the wiring conductor 2, the resistor 34 and the capacitance forming electrode 33 can be electrically connected.

  In order to reduce interference with the operation of the micro electro mechanical mechanism 3, particularly mechanical operation such as vibration, the capacitance forming electrode 33 is separated from the micro electro mechanical mechanism 3, that is, the other main surface of the insulating substrate 7. It is preferable to be arranged close to the side. Here, one of the pair of capacitance forming electrodes 33 may be formed to be exposed on the other main surface of the insulating substrate 7.

  Further, in the electronic device 31, interference may be more effectively suppressed by not forming the capacitance forming electrode 33 in a portion that overlaps with the micro electro mechanical mechanism 3 as seen through the plane.

  The resistor 34 is formed of ruthenium oxide, silver palladium, or the like, and can be formed by, for example, the same means as described above. That is, means for depositing metal as a thin film layer, such as metallized layer forming means, plating layer forming means, and vapor deposition film forming means, can be used. For example, if the resistor 34 is formed by using a metallized layer forming means, a ruthenium oxide paste is printed on a green sheet to be an insulating substrate 7, laminated, and then fired together with the green sheet. May be formed.

  At this time, by printing the ruthenium oxide paste on a portion of the green sheet to be the insulating substrate 7 located immediately below the connection pad 9, the resistor 34 can be disposed immediately below the connection pad 9. it can.

  The resistor 34 may be at least a part of the connection pad 9 or the wiring conductor 2 adjacent to the connection pad 9. That is, at least a part of the connection pad 9 or the wiring conductor 2 to be the resistor 34 may be formed so as to have a higher resistance than other parts.

  In this case, the electronic component sealing substrate 32 and the electronic device 31 having an oscillating function can be further reduced in size as compared with the case where the resistor 34 is separately formed. That is, if the resistor 34 is configured from at least a part of the connection pad 9 or the wiring conductor 8, a CR oscillation circuit can be formed at a shorter distance than the resistor 34 provided separately, and thus the size of the resistor 34 can be reduced. Thus, a highly efficient oscillation circuit can be formed.

  In this case, the resistor 34 is formed by forming at least a part of the connection pad 9 or the wiring conductor 8 adjacent to the connection pad 9 with ruthenium oxide, silver palladium, or the like.

  As this formation means, means for depositing a metal as a thin film layer, such as metallization layer formation means, plating layer formation means, and vapor deposition film formation means, can be used. For example, when the resistor 34 is formed by a metallized layer forming means, a ruthenium oxide paste is applied to a green sheet to be the insulating substrate 7 and a predetermined connection pad 9 or a wiring conductor 8 adjacent to the connection pad 9. It is formed by printing with this pattern.

  If the wiring conductor 8 includes a via conductor, the green sheet is subjected to through hole machining by a mechanical punching method or the like, and then filled with a ruthenium oxide paste in the through hole and laminated. This is formed by firing together with a green sheet.

  Accordingly, the number of times of printing a paste such as ruthenium oxide can be reduced as compared with the case where the resistor 34 is provided in a separate pattern, so that the productivity as the electronic component sealing substrate 32 and the electronic device 31 can be improved. it can.

  Further, in the electronic device 31 according to the present embodiment, the ground conductor layer 14 is interposed between the capacitance forming electrode 33 and the sealed micro electromechanical mechanism (MEMS) 3 as shown in FIG. It is preferable to be provided as described above.

  According to this configuration, since the oscillation noise generated from the capacitance forming electrode 33 of the oscillation circuit can be shielded by the ground conductor layer 14, there is a hindrance to high accuracy driving and improvement of response accuracy due to the oscillation noise. It is possible to more reliably prevent the occurrence of the micro electro mechanical mechanism 3 from being broken or deformed.

  Such a ground conductor layer 14 is produced by the same means using the same material as that of the wiring conductor 2 and the connection pad 9.

(Third embodiment)
Next, a third embodiment of the present invention will be described.

 The electronic component sealing substrate according to the third embodiment of the present invention is different from the electronic component sealing device according to the first embodiment in that it faces the main surface of the insulating substrate 7 on the semiconductor substrate 5 side. The mounting pad provided on the main surface is arranged in correspondence with the sealing position of the micro electro mechanical mechanism 3. FIG. 6 is a cross-sectional view illustrating a configuration example of an electronic device including an electronic component sealing substrate according to the third embodiment of the present invention. FIGS. 7 and 8 are plan views of the electronic device 41 shown in FIG. 6 and schematically show the arrangement of the mounting pads 42 on the insulating substrate 7. In FIG. 5, the same components as those shown in FIGS. 1 to 4 are denoted by the same reference numerals, and description thereof is omitted.

  In FIG. 5, the microelectromechanical mechanism 3 has a double-supported beam structure that supports a beam-like vibrating portion between a pair of columnar support portions. When the microelectromechanical mechanism 3 having the doubly-supported beam structure applies a minute voltage between an upper electrode (not shown) formed on the vibrating portion and a lower electrode (not shown) formed on the semiconductor substrate 5. The vibrating part approaches the lower electrode due to the electrostatic phenomenon, and when the voltage application is stopped, the vibrating part is separated and returns to the original state. And by such an operation of the vibration part, the intensity of the reflected light is modulated by changing the height of the upper electrode to function as a light modulation element, and the vibration part is vibrated at a specific frequency as a frequency filter. It becomes possible to make it function.

  FIG. 7 is a plan view showing a surface of the electronic component sealing substrate 42 according to the present embodiment on the side where the mounting pads 43 are formed. However, FIG. 7 is simplified for easy understanding of the arrangement of the mounting pads 43, and the sealing material 12 is seen through.

  As shown in FIG. 7, in the electronic component sealing substrate 42 according to the embodiment, the mounting region where the mounting pad 43 is disposed passes through the center of the electronic component sealing region inside the sealing material 12. This is an area facing three or less of the four divided areas obtained by dividing the main surface of the insulating substrate 7 into four equal parts by two divided straight lines (indicated by a one-dot chain line in FIG. 7).

  As described above, by disposing the mounting pad 43 in the region facing three or less of the four partitioned regions, the region facing at least one partitioned region is connected to the external electric circuit via the mounting pad 43. Since it is not mechanically connected to the substrate, no stress is generated in that region. Therefore, the stress acting on the electronic component sealing substrate 42 in at least one divided region can be kept low. In addition, since the strain is reduced in the segmented region where the stress is suppressed (hereinafter referred to as “low stress region”), the strain can be reduced also in the region of the semiconductor substrate 5 facing the segmented region.

  Specifically, the stress generated in the semiconductor substrate 5 of the electronic component 2 due to the deformation of the electronic component sealing substrate 42 due to the stress caused by the difference in thermal expansion coefficient is caused in the region of the electronic component 2 facing the mounting region. It is high and becomes low at a part away from the region of the electronic component 2 facing the mounting region. Therefore, the region of the semiconductor substrate 5 facing at least one section region where the mounting pad 43 is not disposed can be a low stress region. Here, when the micro electro mechanical mechanism 3 is formed in this low stress region, for example, it is possible to effectively prevent the micro electro mechanical mechanism 3 including the vibration part from being distorted due to the stress. The driving accuracy of the mechanical mechanism 3 can be increased.

  FIG. 7 shows an example in which the mounting pads 43 are arranged in regions facing the two divided regions on the lower surface of the insulating substrate 7. In this case, on the lower surface of the electronic component sealing substrate 42, two partitioned regions K1 that face the mounting region where the two mounting pads 43 are respectively disposed, and two partitioned regions where the mounting pads 43 are not disposed. K2 exists. The region of the semiconductor substrate 5 facing the two divided regions K2 is a low stress region with small distortion. If the micro electro mechanical mechanism 3 (not shown in FIG. 3) is formed in this low stress region, it is effective that the micro electro mechanical mechanism 3 is distorted due to stress due to a difference in thermal expansion coefficient. Thus, the driving accuracy of the micro electro mechanical mechanism 3 can be increased. In this example, the microelectromechanical mechanism 3 can be formed on the semiconductor substrate 5 in a region facing about a half of the main surface of the insulating substrate 7.

  Note that at least one mounting pad 43 is necessary for mounting the electronic device 41, and the mounting pad 43 is disposed in a region facing at least one of the divided regions.

  How and how many mounting pads 43 are arranged in the number of areas facing the four divided areas, the shape, dimensions, and functions of the microelectromechanical mechanism 3, the planar dimensions of the electronic component 2, and the external electric circuit What is necessary is just to adjust suitably according to the inclination etc. with respect to a board | substrate.

  Further, as shown in FIG. 8, the mounting pad 43 divides the electronic component sealing region inside the sealing material 12 into four equal parts, and is divided into four divided halves extending from the center of the electronic component sealing region toward the outer periphery. You may arrange | position along the line which opposes 3 or less division | segmentation half straight lines among the straight lines (it shows with a dashed-dotted line in FIG. 8).

  FIG. 8 is a plan view showing the surface of the electronic component sealing substrate 42 on which the mounting pads 43 are formed. However, as in FIG. 7, FIG. 8 is simplified for easy understanding of the arrangement of the mounting pads 43, and the sealing material 12 is seen through.

  In this way, by disposing the mounting pads 43 along the lines that face three or less of the four segment half-lines, the electronic component sealing substrate along at least one segment half-line The stress acting on 42 can be kept low. Since the distortion is small in the region including such a segmented half line, the strain can also be reduced in the region of the semiconductor substrate 5 facing the segmented half line.

  Thus, since the low stress region can be formed in the semiconductor substrate 5 in the region facing the region including at least one section half-line in plan view, when the micro electro mechanical mechanism 3 is formed in the low stress region, For example, it is possible to effectively prevent the microelectromechanical mechanism 3 including the vibration part from being distorted or deformed due to the stress, and the driving accuracy of the microelectromechanical mechanism 3 can be increased.

  Further, in the case where the micro electro mechanical mechanism 3 has a beam-like vibrating portion disposed between the tips of a pair of columnar support portions, the following effects can be obtained.

  When the mounting pad 43 is arranged along the segmented half line, the support portion of the micro mechanical electronic mechanism 3 can be arranged so as to straddle the region facing the mounting pad 43. That is, a support portion that is likely to be mechanically broken can be formed in a low-stress region. For example, a so-called doubly supported beam structure (a structure that supports a beam-like vibration portion between a pair of support portions) The degree of freedom in designing the mechanical mechanism 3 can also be increased.

  FIG. 8 shows a case where the mounting pads 43 are arranged in a line along a line facing two segment half lines that are connected in a straight line among the four segment half lines.

  In this case, on the lower surface of the insulating substrate 7, one section pad 43 is arranged, each of the two section half straight lines H1 connected in a straight line, and two sections perpendicular to the section section where the mount pad 43 is not disposed. There is a half-line H2. In the semiconductor substrate 5, a region other than the linear region facing the two segmented half lines on which the mounting pads 43 are disposed is a low-stress region with small distortion. Therefore, if the micro electro mechanical mechanism 3 is formed in this low stress region, it is possible to effectively prevent the micro electro mechanical mechanism 3 from being distorted due to stress due to a difference in thermal expansion coefficient, and so on. The driving accuracy of the mechanism 3 can be increased.

  For example, when the mounting pads 43 are arranged as shown in FIG. 8, when forming the microelectromechanical mechanism 3 having a double-supported beam structure on the semiconductor substrate 5, the mounting pads 43 are arranged on the semiconductor substrate 5. What is necessary is just to arrange | position the support part of the micro electro mechanical mechanism 3 so that the linear area | region which opposes the division | segmentation half straight line H1 may be straddled. If it does in this way, the support part of the microelectromechanical mechanism 3 of a double-supported beam structure can be located in a low stress area | region, respectively. Therefore, it is possible to effectively prevent the support portion from being distorted, and the driving accuracy can be increased even when the electronic device 41 is heated and cooled. In addition, since it is possible to form two support portions in the region of the semiconductor substrate 5 facing the region including the segmented half line H2 where the mounting pads 43 are not disposed, the micro electro mechanical mechanism 3 The degree of freedom in designing the arrangement position and the like is increased. The arrangement of the mounting pads 43 is not limited to the examples shown in FIGS.

  Although not shown in FIGS. 6 to 8, the lower surface of the insulating substrate 7 on which the mounting pads 43 are arranged is used to make the interval between the electronic component sealing substrate 42 and the external electric circuit substrate constant. It is preferable to provide a convex portion. For example, the protrusion is attached to the insulating substrate 7 so that the lower end surface of the external terminal 17 that joins the mounting pad 43 of the electronic device 12 to the external electric circuit substrate is the same height, or is integrated with the insulating substrate 7. It is the member formed in. For example, the convex portion is provided in a portion of the lower surface of the insulating substrate 7 where the mounting pad 43 is not disposed, and functions as a spacer that maintains a constant distance between the lower surface of the insulating substrate 7 and the upper surface of the external electric circuit substrate. . By providing such a convex portion, the electronic device 41 and the external electric circuit board can be easily kept parallel when the electronic device 41 is mounted on the external electric circuit board.

  In this case, if the projection is provided in a region other than the mounting region where the mounting pad 43 is not disposed, the electronic device 41 can be supported by the projection, so that the parallelism between the electronic device 41 and the external electric circuit board is maintained. Effective above. However, it is necessary to keep the convex portion from being bonded to the external electric circuit board outside the mounting area. If the convex portion is bonded to the external electric circuit board, thermal stress is applied to the insulating substrate 7 of the electronic device 41 through the convex portion, and there is a possibility that problems such as distortion of the micro electro mechanical mechanism 3 are induced.

  Further, for example, if a convex portion made of a material having a lower elastic modulus (Young's modulus) than the external terminal is provided near the mounting pad 43, an external force is applied to the electronic device 41 after mounting on the external electric circuit board. In some cases, stress is also distributed to the interface between the convex portion and the insulating substrate 7 of the electronic device 41, and the stress can be effectively relieved by deformation of the convex portion, so that the stress is concentrated on the mounting pad 43. Then, it is possible to suppress the occurrence of destruction from this point.

  If such a convex portion is not bonded to an external electric circuit and is the same as or lower than the height of the external terminal 17 such as a solder bump, various members such as a ceramic material, a metal material, and a resin material are used. Can do. For example, when forming the insulating substrate 7 made of a ceramic material, the bumps are formed in a lump, or solder bumps that become the protrusions in advance on the electronic component sealing substrate 42 using solder balls made of high melting point solder or the like. If a solder bump to be the external terminal 17 is formed after forming, a step for forming the convex portion can be easily formed without requiring a separate step. In addition, when the convex portion is formed using a resin material having a low elastic modulus such as silicone, the stress generated when an external force is applied to the electronic device 41 can be effectively relieved, and the mechanical reliability can be reduced. Can be made higher. As described above, the convex portion may be formed at a desired position according to the placement of the mounting pad 43, for example, a region where the mounting pad 43 is not disposed, a portion adjacent to the mounting pad 43, or the like. For example, when importance is placed on keeping the electronic device 41 parallel to the external electric circuit board when the number of mounting pads 43 is small, a convex part that is not bonded to the external electric circuit board in a region other than the mounting region When it is important to prevent destruction of the mounting pad 43, the low-elasticity mounting pad 43 may be provided near the mounting pad 43.

  Although the present invention has been described with respect to particular embodiments, many other variations, modifications, and other uses will be apparent to those skilled in the art. Accordingly, the invention is not limited to the specific disclosure herein, but can be limited only by the scope of the appended claims.

(A) is a top view which shows one structural example of embodiment of the wiring board provided with the board | substrate for electronic component sealing by the 1st Embodiment of this invention, and an electronic device, FIG.1 (b) FIG. 2 is a cross-sectional view taken along line II of the electronic device shown in FIG. It is sectional drawing which shows the other structural example of the electronic apparatus provided with the electronic component sealing substrate by the 1st Embodiment of this invention. It is sectional drawing which shows the structural example at the time of making the form for taking a plurality of electronic component sealing substrates by 1st Embodiment. (A)-(d) is a figure which shows an example of the manufacturing method of the electronic device by 1st Embodiment to process order. It is sectional drawing which shows the structural example of the electronic apparatus provided with the board | substrate for electronic component sealing by the 2nd Embodiment of this invention. It is sectional drawing which shows the structural example of the electronic apparatus provided with the board | substrate for electronic component sealing by the 3rd Embodiment of this invention. It is the top view which showed the surface by which the mounting pad of the board | substrate for electronic component sealing by 3rd Embodiment was formed. It is the top view which showed the surface by which the mounting pad of the board | substrate for electronic component sealing by 3rd Embodiment was formed. It is sectional drawing which shows the structural example of the conventional board | substrate for electronic component sealing, and an electronic apparatus.

Explanation of symbols

1: Electronic device 2: Electronic component 3: Microelectronic mechanism 4: Electronic component sealing substrate 5: Semiconductor substrate 6: Electrode 8: Wiring conductor 8a: Through conductor 9: Connection pad 10: Annular conductor pattern 11: Conductivity Bonding material 12: Sealing material 13: Recess 14: Ground conductor layer 15: Wiring conductor 16: Insulating film 17: External terminal

Claims (15)

Electrons for hermetically sealing the microelectromechanical mechanism of an electronic component having a semiconductor substrate, a microelectromechanical mechanism formed on a main surface of the semiconductor substrate, and an electrode electrically connected to the microelectromechanical mechanism A component sealing substrate,
An insulating substrate having a first main surface bonded to the main surface of the semiconductor substrate so as to hermetically seal the micromechanical mechanism;
One end is led to the first main surface of the insulating substrate, and the one end includes a wiring conductor electrically connected to the electrode of the electronic component,
The electronic component sealing substrate, wherein the one end of the wiring conductor is located outside a bonding portion between the main surface of the semiconductor substrate and the first main surface of the insulating substrate.   The electronic component sealing substrate according to claim 1, further comprising a conductor layer to which a reference potential is supplied inside the insulating substrate. At least a pair of capacitance forming electrodes formed inside the insulating substrate and electrically connected to the wiring conductor;
The electronic component sealing substrate according to claim 1, further comprising a resistor formed inside the insulating substrate and electrically connected to the capacitor forming electrode.   4. The electronic component sealing substrate according to claim 3, wherein the insulating substrate has a relative dielectric constant higher in a region between the capacitance forming electrodes than in other regions. A connection pad formed on the first main surface of the insulating substrate and electrically connected to the one end of the wiring conductor;
The resistor is disposed inside the insulating substrate directly below the connection pad,
5. The electronic component sealing substrate according to claim 3, wherein a distance between the capacitor forming electrode and the connection pad is longer than a distance between the resistor and the connection pad.   The electronic component sealing substrate according to claim 5, wherein the resistor includes the connection pad or a part of the wiring conductor adjacent to the connection pad.   7. The electron according to claim 3, wherein a conductor layer to which a reference potential is supplied is provided between the first main surface of the insulating substrate and the capacitance forming electrode. Component sealing substrate. A plurality of mounting pads formed on a second main surface opposite to the first main surface of the insulating substrate;
The mounting pad is disposed in a mounting region on the second main surface,
The mounting region is defined by a straight line that divides the region inside the bonding portion between the semiconductor substrate and the insulating substrate on the first main surface into four equal parts through the center of the region. The electronic component sealing substrate according to any one of claims 1 to 7, wherein the electronic component sealing substrate is a region facing three or less of the four divided regions. A plurality of mounting pads formed on a second main surface opposite to the first main surface of the insulating substrate;
The mounting pad is disposed along a mounting line on the second main surface,
The mounting straight line divides the region inside the bonding portion between the semiconductor substrate and the insulating substrate on the first main surface into four equal parts, and is composed of four divided half straight lines extending from the center of the region toward the outer periphery. The electronic component sealing substrate according to claim 1, wherein the electronic component sealing substrate is a line opposed to three or less of the divided half straight lines.   An electronic component sealing substrate having a plurality of forms, comprising a plurality of regions constituting the electronic component sealing substrate according to claim 1. An electronic component sealing substrate according to any one of claims 1 to 9,
An electronic apparatus comprising: a semiconductor substrate; an electronic component having a microelectromechanical mechanism formed on a main surface of the semiconductor substrate; and an electrode electrically connected to the microelectromechanical mechanism. The electronic component sealing substrate includes a conductor layer supplied with a reference potential inside the insulating substrate,
The main surface of the semiconductor substrate and the first main surface of the insulating substrate are joined by a sealing material made of a conductive material that hermetically seals the microelectromechanical mechanism,
The electronic device according to claim 11, wherein the sealing material is electrically connected to the conductor layer. A connection pad formed on the first main surface of the insulating substrate and electrically connected to the one end of the wiring conductor;
The electronic device according to claim 11, further comprising a conductive connection material formed on the connection pad and electrically connected to the electrode of the electronic component.   A resin material filled between the main surface of the semiconductor substrate and the first main surface of the insulating substrate so as to cover the conductive bonding material outside the sealing material is provided. 14. The electronic device according to claim 13, characterized in that A plurality of electronic component substrates are prepared by arranging a plurality of electronic component regions on a semiconductor substrate in which a micro electro mechanical mechanism and electrodes electrically connected to the micro electro mechanical mechanism are formed. Process,
A step of preparing the electronic component sealing substrate in a plurality of forms according to claim 10;
While electrically connecting each electrode of the electronic component substrate of the plurality of forms and the one end of each corresponding wiring conductor, the main surface of the semiconductor substrate and the one main surface of the insulating substrate A step of hermetically sealing the microelectromechanical mechanism;
A method of manufacturing an electronic device, comprising: a step of dividing a joined body of the electronic component substrate having a plurality of molds and the electronic component sealing substrate having a plurality of molds for each electronic component region.

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