JP2006295213A - Board for sealing electronic component, board of multi-patterned form for sealing electronic component, and electronic apparatus - Google Patents

Board for sealing electronic component, board of multi-patterned form for sealing electronic component, and electronic apparatus Download PDF

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JP2006295213A
JP2006295213A JP2006187834A JP2006187834A JP2006295213A JP 2006295213 A JP2006295213 A JP 2006295213A JP 2006187834 A JP2006187834 A JP 2006187834A JP 2006187834 A JP2006187834 A JP 2006187834A JP 2006295213 A JP2006295213 A JP 2006295213A
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electronic component
substrate
main surface
insulating substrate
semiconductor substrate
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Katsuyuki Yoshida
克亨 吉田
Chihiro Makihara
千尋 牧原
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Abstract

<P>PROBLEM TO BE SOLVED: To provide a board for sealing an electronic component with excellent productivity in the case of manufacturing an electronic apparatus for air-tightly sealing a micro electronic mechanical mechanism on a principal side of a semiconductor substrate and to provide a manufacturing method of the electronic apparatus. <P>SOLUTION: The board 6 for sealing the electronic component is used to air-tightly seal the micro electronic mechanical mechanism 8 of an electronic component 10 including: the semiconductor substrate 7; the micro electronic mechanical mechanism 8 formed on the principal side of the semiconductor substrate 7; and electrodes 9 electrically connected to the micro electronic mechanical mechanism 8. Further, the board 6 for sealing the electronic component includes: an insulation board 1 comprising a plurality of laminated sheets; each of wire conductors 2 one end of which is led onto one principal side of the insulation board 1 and electrically connected to each electrode 9 of the electronic component 10 and the other end of which is led onto the other principal side or a side face of the insulation board 1, the board 6 is joined with the semiconductor substrate 7 and the insulation board 1 by interposing a joining member in a manner of surrounding the micro electronic mechanical mechanism 8 to air-tightly seal the micro electronic mechanical mechanism 8, and each one end of each of the wire conductors 2 is located inside the joined parts. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体基板の主面に、微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品領域を形成して成る電子部品を封止するための電子部品封止用基板、および電子部品封止用基板を多数個取り出すための多数個取り形態の電子部品封止用基板、並びに電子部品封止用基板を用いて電子部品の微小電子機械機構を封止することにより形成される電子装置に関するものである。   The present invention provides an electronic component sealing method for sealing an electronic component formed by forming an electronic component region formed by forming a microelectromechanical mechanism and an electrode electrically connected to the main surface of a semiconductor substrate. An electronic component sealing substrate and a multi-component electronic component sealing substrate for taking out a large number of electronic component sealing substrates, and an electronic component sealing substrate using the electronic component sealing substrate It is related with the electronic device formed by these.

近年、シリコンウェーハ等の半導体基板の主面に、半導体集積回路素子等の微細配線を形成する加工技術を応用して、極めて微小な電子機械機構、いわゆるＭＥＭＳ（Micro Electromechanical System）を形成した電子部品が注目され、実用化に向けて開発が進められている。   2. Description of the Related Art In recent years, an electronic component that forms a very small electromechanical mechanism, so-called MEMS (Micro Electromechanical System), by applying a processing technology for forming fine wiring such as a semiconductor integrated circuit element on the main surface of a semiconductor substrate such as a silicon wafer. Has been attracting attention, and is being developed for practical use.

このような微小電子機械機構としては、加速度計・圧力センサ・アクチュエータ等のセンサや、微細な鏡面体を可動式に形成したマイクロミラーデバイス、光デバイス、あるいはマイクロポンプ等を組み込んだマイクロ化学システム等、非常に広い分野にわたるものが試作・開発されている。   Such microelectromechanical mechanisms include sensors such as accelerometers, pressure sensors, and actuators, micromirror devices with movable microscopic mirrors, optical devices, microchemical systems incorporating micropumps, etc. Prototypes and developments have been made that span a very wide range of fields.

そのような微小電子機械機構を形成した電子部品を用いて電子装置を構成するための従来の電子部品封止用基板およびそれを用いて成る電子装置の一例を図４に断面図で示す。図４に示す例では、微小電子機械機構２２が形成された半導体基板２１の主面には、微小電子機械機構２２に電力を供給したり、微小電子機械機構２２から外部の電気回路に電気信号を送り出したりするための電極２３が微小電子機械機構２２と電気的に接続されて形成されており、これら半導体基板２１・微小電子機械機構２２および電極２３により、１つの電子部品２４が構成される。   FIG. 4 is a cross-sectional view of an example of a conventional electronic component sealing substrate for configuring an electronic device using an electronic component having such a micro-electromechanical mechanism and an electronic device using the same. In the example shown in FIG. 4, power is supplied to the main surface of the semiconductor substrate 21 on which the micro electro mechanical mechanism 22 is formed, or an electric signal is transmitted from the micro electro mechanical mechanism 22 to an external electric circuit. Is formed by being electrically connected to the micro electro mechanical mechanism 22, and the semiconductor substrate 21, the micro electro mechanical mechanism 22, and the electrode 23 constitute one electronic component 24. .

なお、このような電子部品２４は、通常、後述するように、半導体基板２１の主面に多数個が縦横に配列形成された多数個取りの形態で形成した後、個々の半導体基板２１に切断することにより製作されるので、この切断の際に切削粉等の異物が微小電子機械機構２２に付着して作動の妨げになることを防止するために、ガラス板２５等で覆われて保護されている。   Such electronic components 24 are usually formed in a multi-cavity form in which a large number are arranged on the main surface of the semiconductor substrate 21 in vertical and horizontal directions, as will be described later, and then cut into individual semiconductor substrates 21. In order to prevent foreign matter such as cutting powder from adhering to the microelectromechanical mechanism 22 and hindering operation during this cutting, it is covered and protected by a glass plate 25 or the like. ing.

そして、この電子部品２４を、電子部品収納用の凹部Ａを有するパッケージ３１の凹部Ａ内に収納するとともに、電子部品２４の電極２３をパッケージ３１の電極パッド３２にボンディングワイヤ３３等の導電性接続材を介して接続した後、パッケージ３１の凹部Ａを蓋体３４で覆って電子部品２４を凹部Ａ内に気密封止することにより、電子装置として完成する。この場合、電子部品２４は、微小電子機械機構２２の動作を妨げないようにするため、中空状態で気密封止する必要がある。   The electronic component 24 is accommodated in the recess A of the package 31 having the recess A for storing the electronic component, and the electrode 23 of the electronic component 24 is electrically connected to the electrode pad 32 of the package 31 such as a bonding wire 33. After the connection via the material, the recess A of the package 31 is covered with the lid 34 and the electronic component 24 is hermetically sealed in the recess A, thereby completing the electronic device. In this case, the electronic component 24 needs to be hermetically sealed in a hollow state so as not to hinder the operation of the microelectromechanical mechanism 22.

この電子装置について、あらかじめパッケージ３１の電極パッド３２から外表面に導出するようにして形成しておいた配線導体３５の導出部分を外部電気回路に接続することにより、気密封止された微小電子機械機構２２が、電極２３・ボンディングワイヤ３３・電極パッド３２および配線導体３５を介して外部の電気回路と電気的に接続される。   With respect to this electronic device, a lead-out portion of the wiring conductor 35 formed so as to lead out from the electrode pad 32 of the package 31 to the outer surface in advance is connected to an external electric circuit, so that the microelectronic machine is hermetically sealed. The mechanism 22 is electrically connected to an external electric circuit through the electrode 23, the bonding wire 33, the electrode pad 32 and the wiring conductor 35.

また、このような電子部品２４は、通常、広面積の半導体基板の主面に多数個を縦横に配列形成させることにより製作されており、この場合の電子装置の製造方法は、従来、以下のようなものであった。すなわち、
（１）半導体基板の主面に、微小電子機械機構２２およびこれに電気的に接続された電極２３が形成されて成る電子部品領域を多数個、縦横に配列形成した電子部品を準備する工程と、
（２）各電子部品の微小電子機械機構２２を、その周囲が中空状態となるようにして、ガラス板２５等で覆って封止する工程と、
（３）半導体基板にダイシング加工等の切断加工を施して、個々の電子部品２４に分割する工程と、
（４）個々の電子部品２４を、電子部品収納用パッケージ３１内に気密封止する工程と、により製作される。 In addition, such an electronic component 24 is usually manufactured by arranging a large number of elements vertically and horizontally on the main surface of a large-area semiconductor substrate. In this case, a method for manufacturing an electronic device is conventionally as follows. It was something like that. That is,
(1) A step of preparing an electronic component in which a large number of electronic component regions formed by forming a microelectromechanical mechanism 22 and an electrode 23 electrically connected thereto are formed on a main surface of a semiconductor substrate, arranged vertically and horizontally; ,
(2) The step of encapsulating the micro electro mechanical mechanism 22 of each electronic component with the glass plate 25 or the like so that the periphery thereof is in a hollow state,
(3) A step of cutting the semiconductor substrate such as dicing and dividing it into individual electronic components 24;
(4) The individual electronic components 24 are manufactured by hermetically sealing in the electronic component storage package 31.

このような従来の製造方法においては、半導体基板の主面に配列形成された多数の電子部品領域の１個ずつをガラス板２５等で封止して保護しておく必要があること、また、一旦ガラス板２５で封止した電子部品を、個片の電子部品２４に分割した後、改めてパッケージ３１内に気密封止するとともに、その電極２３をパッケージ３１の電極パッド３２等に接続して外部接続させる必要があること、等のため、生産性が悪く、実用化が難しいという問題があった。   In such a conventional manufacturing method, it is necessary to seal and protect each one of a large number of electronic component regions arranged on the main surface of the semiconductor substrate with a glass plate 25 or the like, The electronic component once sealed with the glass plate 25 is divided into individual electronic components 24 and then hermetically sealed in the package 31 and the electrode 23 is connected to the electrode pad 32 of the package 31 and the like. Due to the necessity of connection, etc., there was a problem that productivity was poor and practical application was difficult.

この問題に対し、半導体基板の主面に配列形成された多数個の機構微小電子機械を一括して覆い、封止するような基板が提案されている。   In order to solve this problem, there has been proposed a substrate that collectively covers and seals a large number of mechanical microelectronic machines arrayed on the main surface of a semiconductor substrate.

このような封止用の基板としては、半導体基板を材料とするものや導電性の金属板等を材料にするもの等が知られている。   As such a sealing substrate, a substrate made of a semiconductor substrate, a substrate made of a conductive metal plate, or the like is known.

半導体基板を材料とする場合は、例えば、主面に多数個の電子部品領域が配列形成された第１の半導体基板とは別に、この電子部品領域の配列に対応させて多数の凹部を配列形成した封止用の第２の半導体基板を準備し、第１の半導体基板の主面上に第２の半導体基板を、第２の半導体基板の凹部が第１の半導体基板の電子部品領域を覆うようにして接合し、第２の半導体基板に内側に第１の半導体基板の電子部品領域（特に微小電子機械機構）を封止するようにした技術が提案されている（例えば、特許文献１参照。）。   In the case of using a semiconductor substrate as a material, for example, apart from the first semiconductor substrate in which a large number of electronic component regions are arranged on the main surface, a large number of recesses are formed corresponding to the arrangement of the electronic component regions. The second semiconductor substrate for sealing is prepared, the second semiconductor substrate is covered on the main surface of the first semiconductor substrate, and the concave portion of the second semiconductor substrate covers the electronic component region of the first semiconductor substrate. Thus, a technique has been proposed in which the electronic component region (particularly, the microelectromechanical mechanism) of the first semiconductor substrate is sealed inside the second semiconductor substrate (see, for example, Patent Document 1). .)

また、導電性を有する基板を材料とする場合には、導電性を有するカバー用の基板にパターン溝を形成するとともに、このパターン溝をガラスやセラミック材料で充填して平坦化させた後、その上にボンディングパターン（電極パッド等）を形成し、このボンディングパターンに電子部品の電極を接続するとともに導電性のカバー用基板を半導体基板の主面に接合し、その後、電子部品領域をセラミックやガラス等で封着するとともに、ボンディングパターンを外部に導出するための外部配線用電極パターンを形成するようにした技術が提案されている（例えば、特許文献２参照。）。
特開２００１−１４４１１７号公報 特開２００２−４３４６３号公報 When a conductive substrate is used as a material, a pattern groove is formed on the conductive cover substrate, and the pattern groove is filled with glass or a ceramic material and planarized. A bonding pattern (electrode pad, etc.) is formed on the electrode, and an electrode of an electronic component is connected to the bonding pattern, and a conductive cover substrate is bonded to the main surface of the semiconductor substrate. For example, a technique has been proposed in which an electrode pattern for external wiring for leading a bonding pattern to the outside is formed (see, for example, Patent Document 2).
JP 2001-144117 A JP 2002-43463 A

しかしながら、このような従来の封止用基板を用いて半導体基板の主面の電子部品領域を封止する場合は、多数個の電子部品領域を一括して封止することはできるものの、例えば、半導体基板を材料とした封止用基板の場合であれば、半導体基板の内部に３次元状の配線導体を形成することができないため、封止用の（第２の）半導体基板の、電子部品領域が配列形成された（第１の）半導体基板に接合される主面から対向する他方主面にかけて配線導体を導出することができず、電子部品の電極は、第１の半導体基板の主面に形成された電極の一部を封止部の外側に延出させるとともに、この延出部をボンディングワイヤを介して電子部品収納用パッケージの電極パッドや外部の電気回路に接続する必要があり、実装工程（電子部品領域の封止から電子装置として完成させて外部電気回路に接続するまでの工程）が長く、また、個々の電子装置のサイズが大きくなってしまうという問題が残る。また、電子装置を組み込んだ電子システムの小型化に有利な、表面実装ができないという問題もある。   However, when the electronic component region on the main surface of the semiconductor substrate is sealed using such a conventional sealing substrate, a large number of electronic component regions can be collectively sealed, for example, In the case of a sealing substrate using a semiconductor substrate as a material, a three-dimensional wiring conductor cannot be formed inside the semiconductor substrate. Therefore, the electronic component of the (second) semiconductor substrate for sealing The wiring conductor cannot be led out from the main surface bonded to the (first) semiconductor substrate in which the regions are arranged to the other main surface facing each other, and the electrode of the electronic component is the main surface of the first semiconductor substrate. It is necessary to extend a part of the electrode formed on the outside of the sealing portion, and to connect the extending portion to an electrode pad of an electronic component storage package or an external electric circuit via a bonding wire, Mounting process (in the electronic component area Up step) is long to connect to an external electric circuit to complete the electronic device from the stop, also a problem that there remains the size of individual electronic devices increases. There is also a problem that surface mounting is not possible, which is advantageous for downsizing an electronic system incorporating an electronic device.

また、導電性の金属板等を材料とした封止用基板の場合であれば、金属板に電極パッド等の導体パターンを形成することができるように、一旦ガラスやセラミックスで金属板の表面に形成したパターン溝等を埋めて絶縁部を形成したり、その絶縁部の表面に、実装工程の途中で導体部を形成したりする必要があるため、この場合も、電子部品の実装工程を短くすることが困難であるという問題がある。   In the case of a sealing substrate made of a conductive metal plate or the like, once the surface of the metal plate is made of glass or ceramic so that a conductor pattern such as an electrode pad can be formed on the metal plate. In this case as well, it is necessary to shorten the mounting process of the electronic component because it is necessary to form an insulating part by filling the formed pattern groove or the like, or to form a conductor part on the surface of the insulating part during the mounting process. There is a problem that it is difficult to do.

本発明は上記従来の技術における諸問題に鑑みて完成されたものであり、その目的は、半導体基板の主面に形成された微小電子機械機構を容易かつ確実に封止することができるとともに、この微小電子機械機構と接続された半導体基板の主面に形成されている電極を容易かつ確実に、例えば表面実装が可能な形態で、外部接続させることが可能な電子部品封止用基板を提供することにある。   The present invention has been completed in view of the above-described problems in the prior art, and its purpose is to easily and reliably seal the microelectromechanical mechanism formed on the main surface of the semiconductor substrate, Provided is an electronic component sealing substrate in which electrodes formed on the main surface of a semiconductor substrate connected to the microelectromechanical mechanism can be externally connected in a form that can be mounted on the surface easily and reliably, for example. There is to do.

また、本発明の他の目的は、このような微小電子機械機構および電極から成る電子部品領域が半導体基板の主面に多数個、縦横に配列形成されていたとしても、これらを容易かつ確実に封止することが可能な封止用基板を提供するとともに、このような封止用基板を用いて、微小電子機械機構が封止されて成る多数個の電子装置を、例えば表面実装が可能な形態で、一括して形成することが可能な、電子装置の製造方法を提供することにある。   Another object of the present invention is to easily and reliably provide a plurality of electronic component regions composed of such micro-electromechanical mechanisms and electrodes arranged in the main surface of the semiconductor substrate vertically and horizontally. Provided is a sealing substrate that can be sealed, and by using such a sealing substrate, a large number of electronic devices in which a microelectromechanical mechanism is sealed can be surface-mounted, for example. An object of the present invention is to provide a method for manufacturing an electronic device that can be collectively formed.

本発明の第１の側面に係る電子部品封止用基板は、半導体基板と、該半導体基板の主面に形成される微小電子機械機構と、該微小電子機械機構に対して電気的に接続される電極とを有する電子部品の前記微小電子機械機構を気密封止するためのものであって、複数のシートを積層してなる絶縁基板と、一端が前記絶縁基板の一方主面に導出され前記電子部品の前記電極と電気的に接続し、他端が前記絶縁基板の他方主面または側面に導出される配線導体とを備え、前記微小電子機械機構を取り囲むように、接合材を介在させて前記半導体基板および前記絶縁基板を接合することにより前記微小電子機械機構を気密封止し、前記配線導体の前記一端が前記接合部位の内側に位置していることを特徴とするものである。   An electronic component sealing substrate according to a first aspect of the present invention is a semiconductor substrate, a microelectromechanical mechanism formed on the main surface of the semiconductor substrate, and electrically connected to the microelectromechanical mechanism. An airtight seal for the micro-electromechanical mechanism of an electronic component having an electrode, wherein an insulating substrate formed by laminating a plurality of sheets, and one end led out to one main surface of the insulating substrate A wiring conductor that is electrically connected to the electrode of the electronic component and has the other end led to the other main surface or side surface of the insulating substrate, with a bonding material interposed so as to surround the micro-electromechanical mechanism; The micro electro mechanical mechanism is hermetically sealed by bonding the semiconductor substrate and the insulating substrate, and the one end of the wiring conductor is located inside the bonding portion.

本発明の第２の側面に係る電子部品封止用基板は、半導体基板と、該半導体基板の主面に形成される微小電子機械機構と、該微小電子機械機構に対して電気的に接続される電極とを有する電子部品の前記微小電子機械機構を気密封止するためのものであって、複数のシートを積層してなる絶縁基板と、一端が前記絶縁基板の一方主面に導出され前記電子部品の前記電極と電気的に接続し、他端が前記絶縁基板の他方主面または側面に導出される配線導体とを備え、前記微小電子機械機構を取り囲むように、前記半導体基板および前記絶縁基板をシーム溶接または電子ビーム溶接によって接合することにより前記微小電子機械機構を気密封止し、前記配線導体の前記一端が前記接合部位の内側に位置していることを特徴とするものである。   An electronic component sealing substrate according to a second aspect of the present invention is a semiconductor substrate, a microelectromechanical mechanism formed on the main surface of the semiconductor substrate, and electrically connected to the microelectromechanical mechanism. An airtight seal for the micro-electromechanical mechanism of an electronic component having an electrode, wherein an insulating substrate formed by laminating a plurality of sheets, and one end led out to one main surface of the insulating substrate A wiring conductor that is electrically connected to the electrode of the electronic component and has the other end led to the other main surface or side surface of the insulating substrate, and surrounds the microelectromechanical mechanism so as to surround the semiconductor substrate and the insulation The micro electromechanical mechanism is hermetically sealed by joining the substrates by seam welding or electron beam welding, and the one end of the wiring conductor is located inside the joining portion.

本発明の第１の側面または本発明の第２の側面に係る電子部品封止用基板において前記絶縁基板は枠状シートと平板状シートとを含んでなり、前記枠状シートは前記微小電子機械機構の少なくとも一部を収容するための収容空間を構成するのが好ましい。   In the electronic component sealing substrate according to the first aspect of the present invention or the second aspect of the present invention, the insulating substrate includes a frame sheet and a flat sheet, and the frame sheet is the microelectronic machine. It is preferable to configure an accommodation space for accommodating at least a part of the mechanism.

本発明の第１の側面または本発明の第２の側面に係る電子部品封止用基板において前記シートはグリーンシートであるのが好ましい。   In the electronic component sealing substrate according to the first aspect of the present invention or the second aspect of the present invention, the sheet is preferably a green sheet.

本発明の第１の側面または本発明の第２の側面に係る電子部品封止用基板は、一端が前記半導体基板と前記絶縁基板との接合部位における該絶縁基板の一方主面に導出され、他端が前記絶縁基板の他方主面または側面に導出される別の配線導体を更に有するのが好ましい。   In the electronic component sealing substrate according to the first aspect of the present invention or the second aspect of the present invention, one end is led out to one main surface of the insulating substrate at a joint portion between the semiconductor substrate and the insulating substrate, It is preferable that the other end further has another wiring conductor led to the other main surface or side surface of the insulating substrate.

本発明の第１の側面または本発明の第２の側面に係る電子部品封止用基板において前記絶縁基板はムライト質焼結体またはガラスセラミックス焼結体からなるのが好ましい。   In the electronic component sealing substrate according to the first aspect of the present invention or the second aspect of the present invention, the insulating substrate is preferably made of a mullite sintered body or a glass ceramic sintered body.

本発明の第１の側面または本発明の第２の側面に係る電子部品封止用基板において前記絶縁基板は窒化アルミニウム質焼結体からなるのが好ましい。   In the electronic component sealing substrate according to the first aspect of the present invention or the second aspect of the present invention, the insulating substrate is preferably made of an aluminum nitride sintered body.

本発明の第３の側面に係る多数個取り形態の電子部品封止用基板は、本発明の第１の側面または本発明の第２の側面に係る電子部品封止用基板を構成する領域を多数有してなることを特徴とする。   The multi-component electronic component sealing substrate according to the third aspect of the present invention includes a region constituting the electronic component sealing substrate according to the first aspect of the present invention or the second aspect of the present invention. It is characterized by having a large number.

本発明の第４の側面に係る電子装置は、本発明の第１の側面または本発明の第２の側面に係る電子部品封止用基板と、前記電子部品とを備えることを特徴とする。   An electronic device according to a fourth aspect of the present invention includes the electronic component sealing substrate according to the first aspect of the present invention or the second aspect of the present invention, and the electronic component.

本発明の電子部品封止用基板によれば、微小電子機械機構を取り囲むように半導体基板および絶縁基板を、接合材を介在させるか、シーム溶接または電子ビーム溶接によって接合して微小電子機械機構を気密封止するようにしたことから、電子部品の微小電子機械機構を絶縁基板により容易かつ確実に封止することができる。   According to the electronic component sealing substrate of the present invention, the semiconductor substrate and the insulating substrate are joined to each other so as to surround the micro electro mechanical mechanism by interposing a bonding material or by seam welding or electron beam welding. Since the hermetic sealing is performed, the microelectromechanical mechanism of the electronic component can be easily and reliably sealed with the insulating substrate.

また、本発明の電子部品封止用基板は、例えば、セラミック多層配線基板等の絶縁基板を用いて形成したものとすることにより、配線導体を、絶縁基板の一方主面から他方主面や側面にかけて、基板の内部や表面に自由に形成して導出させることができ、この導出された端部に外部接続用の金属バンプを取着させること等により、容易に表面実装することが可能な電子装置として完成させることができる。   In addition, the electronic component sealing substrate of the present invention is formed by using an insulating substrate such as a ceramic multilayer wiring substrate, so that the wiring conductor can be connected from one main surface to the other main surface or side surface of the insulating substrate. Can be freely formed inside and on the surface of the substrate and led out, and by attaching metal bumps for external connection to the lead-out end, etc. It can be completed as a device.

また、本発明の多数個取り形態の電子部品封止用基板においては、半導体基板の主面に多数の電子部品領域が縦横に配列形成されていたとしても、これらを一括して、外部接続が可能なようにして封止することができる。   Further, in the electronic component sealing substrate of the multi-cavity form according to the present invention, even if a large number of electronic component regions are arranged vertically and horizontally on the main surface of the semiconductor substrate, these are collectively connected to external connection. It can be sealed as possible.

また本発明の電子装置の製造方法によれば、上記各工程を具備することから、縦横に配列形成された多数個の電子部品領域について、それぞれの電極の外部接続のための接続と微小電子機械機構の封止とを同時に行なうことができるため、互いに接合された電子部品および電子部品封止用基板から成る電子装置を、容易かつ確実に、多数個製造することができる。   In addition, according to the method for manufacturing an electronic device of the present invention, since each of the above steps is provided, connection for external connection of each electrode and a microelectronic machine are performed for a large number of electronic component regions arranged vertically and horizontally. Since the mechanism can be sealed at the same time, a large number of electronic devices including the electronic components and the electronic component sealing substrate bonded to each other can be manufactured easily and reliably.

また、互いに接合された電子部品および電子部品封止用基板を電子部品封止領域毎に分割することにより、電子部品封止領域に電子部品領域が接合されて成る個々の電子装置を多数個、同時に製造することができる。   Further, by dividing the electronic component and the electronic component sealing substrate bonded to each other into each electronic component sealing region, a large number of individual electronic devices in which the electronic component region is bonded to the electronic component sealing region, Can be manufactured at the same time.

この分割の際、電子部品領域の微小電子機械機構は封止用基板により封止されているので、ダイシング加工等による分割で発生するシリコン等の半導体基板の切削粉が微小電子機械機構に付着するようなことはなく、分割後の電子装置において微小電子機械機構を確実に作動させることができる。   At the time of the division, the micro electro mechanical mechanism in the electronic component region is sealed by the sealing substrate, so that the cutting powder of the semiconductor substrate such as silicon generated by the dicing process or the like adheres to the micro electro mechanical mechanism. There is no such thing, and the micro electromechanical mechanism can be reliably operated in the divided electronic device.

また、分割して得られた電子装置は、絶縁基板の他方主面や側面に配線導体が導出されているので、この導出された端部に金属バンプ等の端子を取着するだけで、表面実装等により外部電気回路基板に実装することができるものとなり、実装の工程を非常に短く、かつ容易なものとすることができる電子装置となる。   Moreover, since the wiring conductor is led out to the other main surface or side surface of the insulating substrate, the electronic device obtained by dividing the surface can be obtained by simply attaching a terminal such as a metal bump to the lead end. The electronic device can be mounted on the external electric circuit board by mounting or the like, and the mounting process can be made extremely short and easy.

本発明の電子部品封止用基板およびそれを用いた電子装置の製造方法について以下に詳細に説明する。   The electronic component sealing substrate of the present invention and an electronic device manufacturing method using the same will be described in detail below.

図１は本発明の電子部品封止用基板の実施の形態の一例を示す断面図である。   FIG. 1 is a sectional view showing an example of an embodiment of an electronic component sealing substrate of the present invention.

図１において、１は絶縁基板、２は配線導体、３は接続パッド、４は枠部材、５は接続端子である。これら絶縁基板１・配線導体２・接続パッド３・枠部材４および接続端子５により電子部品封止用基板６が形成される。   In FIG. 1, 1 is an insulating substrate, 2 is a wiring conductor, 3 is a connection pad, 4 is a frame member, and 5 is a connection terminal. An electronic component sealing substrate 6 is formed by the insulating substrate 1, the wiring conductor 2, the connection pad 3, the frame member 4 and the connection terminal 5.

この電子部品封止用基板６を用いて、半導体基板７の主面（この図１の例では下面）に、微小電子機械機構８と電極９とを互いに電気的に接続するようにして形成して成る電子部品１０を封止することにより、微小電子機械機構８が外部接続可能な状態で封止されてなる電子装置が形成される。   Using this electronic component sealing substrate 6, a micro electro mechanical mechanism 8 and an electrode 9 are electrically connected to each other on the main surface of the semiconductor substrate 7 (the lower surface in the example of FIG. 1). By sealing the electronic component 10 formed as described above, an electronic device is formed in which the micro-electromechanical mechanism 8 is sealed in a state where it can be externally connected.

絶縁基板１は、微小電子機械機構８を封止するための蓋体として機能するとともに、配線導体２・接続パッド３・枠部材４および接続端子５を形成するための基体として機能する。   The insulating substrate 1 functions as a lid for sealing the micro electro mechanical mechanism 8 and also functions as a base for forming the wiring conductor 2, the connection pad 3, the frame member 4 and the connection terminal 5.

この絶縁基板１は、酸化アルミニウム質焼結体や窒化アルミニウム質焼結体・ムライト質焼結体・炭化珪素質焼結体・窒化珪素質焼結体・ガラスセラミックス焼結体等のセラミックス材料や、ポリイミド・ガラスエポキシ樹脂等の有機樹脂材料、セラミックスやガラス等の無機粉末をエポキシ樹脂等の有機樹脂で結合して成る複合材等により形成される。   This insulating substrate 1 is made of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, or a glass ceramic sintered body. It is formed of an organic resin material such as polyimide / glass epoxy resin, a composite material formed by bonding inorganic powders such as ceramics and glass with an organic resin such as epoxy resin, and the like.

絶縁基板１は、例えば、酸化アルミニウム質焼結体から成る場合であれば、酸化アルミニウムとガラス粉末等の原料粉末をシート上に成形して成るグリーンシートを積層し、焼成することにより形成される。なお、絶縁基板１は、酸化アルミニウム質焼結体で形成するものに限らず、用途や気密封止する電子部品１０の特性等に応じて適したものを選択することが好ましい。   If the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, the insulating substrate 1 is formed by laminating and baking a green sheet formed by forming aluminum oxide and a raw material powder such as glass powder on the sheet. . The insulating substrate 1 is not limited to the one formed of an aluminum oxide sintered body, and it is preferable to select a substrate that is suitable for the application and the characteristics of the electronic component 10 to be hermetically sealed.

例えば、絶縁基板１は、後述するように、枠部材４を介して半導体基板７と機械的に接合されるので、半導体基板７との接合の信頼性、つまり微小電子機械機構８の封止の気密性を高くするためには、ムライト質焼結体や、例えばガラス成分の種類や添加量を調整することにより熱膨張係数を半導体基板７に近似させるようにした酸化アルミニウム−ホウ珪酸ガラス系等のガラスセラミックス焼結体等のような半導体基板７との熱膨張係数の差が小さい材料で形成することが好ましい。   For example, since the insulating substrate 1 is mechanically bonded to the semiconductor substrate 7 via the frame member 4 as will be described later, the reliability of bonding with the semiconductor substrate 7, that is, the sealing of the micro electro mechanical mechanism 8 is achieved. In order to increase the airtightness, a mullite sintered body, an aluminum oxide-borosilicate glass system in which the thermal expansion coefficient is approximated to the semiconductor substrate 7 by adjusting, for example, the kind and addition amount of the glass component, etc. It is preferable to form a material having a small difference in thermal expansion coefficient from the semiconductor substrate 7 such as a glass ceramic sintered body.

また、絶縁基板１は、配線導体２により伝送される電気信号の遅延を防止するような場合には、ポリイミド・ガラスエポキシ樹脂等の有機樹脂材料、セラミックスやガラス等の無機粉末をエポキシ樹脂等の有機樹脂で結合して成る複合材、または、酸化アルミニウム−ホウ珪酸ガラス系や酸化リチウム系等のガラスセラミックス焼結体等のような比誘電率の小さい材料で形成することが好ましい。   Further, in the case of preventing the delay of the electric signal transmitted by the wiring conductor 2, the insulating substrate 1 is made of an organic resin material such as polyimide / glass epoxy resin, or an inorganic powder such as ceramic or glass such as epoxy resin. It is preferably formed of a composite material formed by bonding with an organic resin, or a material having a low relative dielectric constant such as a sintered glass ceramic such as aluminum oxide-borosilicate glass or lithium oxide.

また、絶縁基板１は、封止する微小電子機械機構８の発熱量が大きく、この熱の外部への放散性を良好とするような場合には、窒化アルミニウム質焼結体等のような熱伝導率の大きな材料で形成することが好ましい。   Further, the insulating substrate 1 has a large calorific value of the microelectromechanical mechanism 8 to be sealed, and in the case where the heat dissipating property is good, a heat such as an aluminum nitride sintered body is used. It is preferable to form with a material having high conductivity.

また、絶縁基板１の一方主面に、電子部品１０の微小電子機械機構８を内側に収めるような凹部１ａを形成しておいてもよい。凹部１ａ内に微小電子機械機構８の一部を収めるようにしておくと、微小電子機械機構８を取り囲むための枠部材４の高さを低く抑えることができ、電子装置の低背化に有利なものとなる。   In addition, a concave portion 1a may be formed on one main surface of the insulating substrate 1 so as to accommodate the microelectromechanical mechanism 8 of the electronic component 10 inside. If a part of the micro electro mechanical mechanism 8 is accommodated in the recess 1a, the height of the frame member 4 surrounding the micro electro mechanical mechanism 8 can be kept low, which is advantageous for reducing the height of the electronic device. It will be something.

絶縁基板１の一方主面（微小電子機械機構８を封止する側）からは、他方主面または側面に配線導体２が導出されている。   From one main surface of the insulating substrate 1 (the side on which the micro electro mechanical mechanism 8 is sealed), the wiring conductor 2 is led out to the other main surface or side surface.

また、この絶縁基板１の一方主面側の枠部材４の内側の部位には、配線導体２と接続された接続パッド３が形成されている。   In addition, a connection pad 3 connected to the wiring conductor 2 is formed in a portion inside the frame member 4 on the one main surface side of the insulating substrate 1.

これらの配線導体２および接続パッド３は、接続パッド３上に形成される接続端子５を介して電子部品１０の電極９と電気的に接続され、これを絶縁基板１の他方主面や側面に導出する機能を有する。   The wiring conductor 2 and the connection pad 3 are electrically connected to the electrode 9 of the electronic component 10 through the connection terminal 5 formed on the connection pad 3, and this is connected to the other main surface or side surface of the insulating substrate 1. It has a function to derive.

これらの配線導体２および接続パッド３は、銅・銀・金・パラジウム・タングステン・モリブデン・マンガン等の金属材料により形成される。この形成の手段としては、メタライズ層・めっき層・蒸着等の金属を薄膜層として被着させる手段を用いることができる。例えば、タングステンのメタライズ層から成る場合であれば、タングステンのペーストを絶縁基板１となるグリーンシートに印刷してこれをグリーンシートとともに焼成することにより形成される。   These wiring conductors 2 and connection pads 3 are formed of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, and manganese. As a means for the formation, a means for depositing a metal such as a metallized layer, a plating layer or vapor deposition as a thin film layer can be used. For example, in the case of a tungsten metallized layer, it is formed by printing a tungsten paste on a green sheet to be the insulating substrate 1 and firing it together with the green sheet.

接続端子５は、錫−銀系・錫−銀−銅系等の半田、金−錫ろう等の低融点ろう材、銀−ゲルマニウム系等の高融点ろう材、導電性有機樹脂、あるいはシーム溶接・電子ビーム溶接等の溶接法による接合を可能とするような金属材料等により形成されている。   The connection terminal 5 is composed of a solder such as tin-silver or tin-silver-copper, a low melting point brazing material such as gold-tin brazing, a high melting point brazing material such as silver-germanium, a conductive organic resin, or seam welding. -It is made of a metal material that can be joined by a welding method such as electron beam welding.

この接続端子５を電子部品１０の電極９に接合することにより、電子部品１０の電極９が、接続端子５・接続パッド３および配線導体２を介して、絶縁基板１の他方主面または側面に導出される。そして、この導出された端部を外部の電気回路に錫−鉛半田等を介して接合することにより、電子部品１０の電極９が外部の電気回路と電気的に接続される。   By joining the connection terminal 5 to the electrode 9 of the electronic component 10, the electrode 9 of the electronic component 10 is connected to the other main surface or side surface of the insulating substrate 1 via the connection terminal 5, the connection pad 3 and the wiring conductor 2. Derived. And the electrode 9 of the electronic component 10 is electrically connected with an external electric circuit by joining this derived | led-out edge part to an external electric circuit via tin-lead solder etc. FIG.

また、絶縁基板１の一方主面には、接続パッド３を取り囲むようにして枠部材４が接合されている。   A frame member 4 is joined to one main surface of the insulating substrate 1 so as to surround the connection pad 3.

枠部材４は、電子部品１０の微小電子機械機構８をその内側に気密封止するための側壁として機能する。   The frame member 4 functions as a side wall for hermetically sealing the microelectromechanical mechanism 8 of the electronic component 10 inside thereof.

この枠部材４の主面（図１の例では上面）を電子部品１０の主面（図１の例では下面）に接合させることにより、枠部材４の内側に微小電子機械機構８が気密封止される。なお、この場合、半導体基板７が底板となり、絶縁基板１が蓋体となる。   By joining the main surface (upper surface in the example of FIG. 1) of the frame member 4 to the main surface (lower surface in the example of FIG. 1) of the electronic component 10, the micro electromechanical mechanism 8 is hermetically sealed inside the frame member 4. Stopped. In this case, the semiconductor substrate 7 serves as a bottom plate and the insulating substrate 1 serves as a lid.

枠部材４は、鉄−ニッケル−コバルト合金や鉄−ニッケル合金等の鉄−ニッケル系合金・無酸素銅・アルミニウム・ステンレス鋼・銅−タングステン合金・銅−モリブデン合金等の金属材料や、酸化アルミニウム質焼結体・ガラスセラミックス焼結体等の無機系材料、あるいはＰＴＦＥ（ポリテトラフルオロエチレン）・ガラスエポキシ樹脂等の有機樹脂系材料等により形成される。   The frame member 4 is made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy, such as iron-nickel alloy, oxygen-free copper, aluminum, stainless steel, copper-tungsten alloy, copper-molybdenum alloy, or aluminum oxide. It is formed of an inorganic material such as a material sintered body and a glass ceramic sintered body, or an organic resin material such as PTFE (polytetrafluoroethylene) and a glass epoxy resin.

また、枠部材４の主面を電子部品１０の半導体基板７の主面に接合する方法としては、錫−銀系等の半田，金−錫ろう等の低融点ろう材，銀−ゲルマニウム系等の高融点ろう材，導電性有機樹脂等の接合材を介して接合する方法、あるいはシーム溶接・電子ビーム溶接等の溶接法を用いることができる。   Further, as a method of joining the main surface of the frame member 4 to the main surface of the semiconductor substrate 7 of the electronic component 10, solder such as tin-silver type, low melting point brazing material such as gold-tin brazing, silver-germanium type, etc. A bonding method such as a high melting point brazing material, a conductive organic resin or the like, or a welding method such as seam welding or electron beam welding can be used.

そして、半導体基板７の主面に微小電子機械機構８およびこれに電気的に接続された電極９が形成されて成る電子部品１０について、電極９を接続端子５に接合し、半導体基板７の主面を枠部材４の主面に接合させることによって、枠部材４の内側に電子部品１０の微小電子機械機構８が気密封止された電子装置が形成される。   Then, for the electronic component 10 in which the microelectromechanical mechanism 8 and the electrode 9 electrically connected thereto are formed on the main surface of the semiconductor substrate 7, the electrode 9 is joined to the connection terminal 5. By joining the surface to the main surface of the frame member 4, an electronic device in which the microelectromechanical mechanism 8 of the electronic component 10 is hermetically sealed inside the frame member 4 is formed.

この電子装置のうち配線導体２の導出部分を、半田ボール等の外部端子１１を介して外部の電気回路に接続することにより、微小電子機械機構８が外部電気回路と電気的に接続される。   By connecting the lead-out portion of the wiring conductor 2 of this electronic device to an external electric circuit via an external terminal 11 such as a solder ball, the microelectromechanical mechanism 8 is electrically connected to the external electric circuit.

なお、図１に示すように、枠部材４が接合される絶縁基板１の主面に、接続パッド３と同様の材料により導体層３ａを形成しておき、この導体層３ａから絶縁基板１の他方主面にかけて配線導体２の一部を導出させるようにしてもよい。この導体層３ａから導出された配線導体２の導出部分は、上述の外部端子１１等を介して外部電気回路の接地用端子等に接続することができる。   As shown in FIG. 1, a conductor layer 3a is formed of the same material as that of the connection pad 3 on the main surface of the insulating substrate 1 to which the frame member 4 is bonded, and the insulating substrate 1 is formed from the conductor layer 3a. A part of the wiring conductor 2 may be led out over the other main surface. The lead-out portion of the wiring conductor 2 led out from the conductor layer 3a can be connected to the grounding terminal of the external electric circuit or the like via the external terminal 11 or the like.

この場合、接続端子５と電極９との接合、および枠部材４の主面と半導体基板７の主面との接合を一つの工程で確実かつ容易に行なうことを可能とするために、接続端子５の高さと枠部材４の高さとは同じ高さとしておく必要がある。   In this case, in order to enable the bonding of the connection terminal 5 and the electrode 9 and the bonding of the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 to be performed reliably and easily in one step, the connection terminal The height of 5 and the height of the frame member 4 need to be the same height.

また、本発明の電子部品封止用基板６は、図２に実施の形態の他の例を断面図で示すように、このような接続パッド３および枠部材４を広面積の母基板の一方主面に縦横に配列形成した、いわゆる多数個取りの形態としておくことが好ましい。なお、図２において、図１と同じ部位には同じ符号を付してある。   Further, the electronic component sealing substrate 6 of the present invention has such a connection pad 3 and frame member 4 as one of the large-area mother substrates as shown in a sectional view in FIG. It is preferable to use a so-called multi-cavity configuration in which the main surface is arranged vertically and horizontally. In FIG. 2, the same parts as those in FIG.

このような多数個取りとしておくと、通常は、半導体基板７の主面に、微小電子機械機構８およびこれに電気的に接続された電極９が多数個配列形成された、多数個取りの形態で製作される電子部品１０を、多数個、同時に気密封止することができ、生産性を優れたものとすることができる。   If such a large number is taken, usually, a multi-chip form in which a large number of microelectromechanical mechanisms 8 and electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7. A large number of the electronic components 10 manufactured in the above can be hermetically sealed at the same time, and the productivity can be improved.

また、このように、半導体基板７の主面に、微小電子機械機構８およびこれに電気的に接続された電極９が多数個配列形成された、多数個取りの形態で製作される電子部品１０を一括して封止しておくと、この半導体基板７（および電子部品封止用基板６）にダイシング加工等の切断加工を施して、個々の電子部品１０（電子装置）に分割する際に、切断に伴って発生する切削粉等が微小電子機械機構８に付着してその作動を妨害する、という不具合の発生を効果的に防止することができる。   In addition, in this way, an electronic component 10 manufactured in a multi-cavity form in which a large number of microelectromechanical mechanisms 8 and electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7. Are collectively sealed, the semiconductor substrate 7 (and the electronic component sealing substrate 6) is subjected to a cutting process such as a dicing process and divided into individual electronic components 10 (electronic devices). Thus, it is possible to effectively prevent the occurrence of a problem that cutting powder or the like generated along with cutting adheres to the microelectromechanical mechanism 8 and interferes with its operation.

次に、このような電子部品封止用基板６を用いた、電子装置の製造方法について、図３（ａ）〜（ｅ）に基づいて説明する。図３は本発明の電子装置の製造方法の実施の形態の一例をそれぞれ工程順に示した断面図であり、図３において図１および図２と同じ部位には同じ符号を付してある。   Next, a method of manufacturing an electronic device using such an electronic component sealing substrate 6 will be described with reference to FIGS. FIG. 3 is a sectional view showing an example of an embodiment of an electronic device manufacturing method according to the present invention in the order of steps. In FIG. 3, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals.

まず、図３（ａ）に示すように、半導体基板７の主面に、微小電子機械機構８およびこれに電気的に接続された電極９が形成されて成る電子部品領域１０ａを多数個、縦横に配列形成した多数個取りの電子部品１０ｂを準備する。   First, as shown in FIG. 3A, a large number of electronic component regions 10a each having a microelectromechanical mechanism 8 and electrodes 9 electrically connected thereto are formed on the main surface of the semiconductor substrate 7. A multi-piece electronic component 10b arranged in the same manner is prepared.

半導体基板７は、例えば単結晶や多結晶等のシリコン基板から成る。   The semiconductor substrate 7 is made of a silicon substrate such as a single crystal or polycrystal.

このシリコン基板の表面に酸化シリコン層を形成するとともに、フォトリソグラフィ等の微細配線加工技術を応用して、微小な振動体等の微小電子機械機構８および円形状パターン等の導体から成る電極９が形成された電子部品領域１０ａを多数個配列形成することにより多数個取りの電子部品１０ｂが形成される。なお、この例においては、微小電子機械機構８と電極９とは、それぞれ半導体基板７の主面に形成された微細配線（図示せず）を介して電気的に接続されている。   A silicon oxide layer is formed on the surface of the silicon substrate, and by applying a fine wiring processing technique such as photolithography, a micro electromechanical mechanism 8 such as a minute vibrating body and an electrode 9 made of a conductor such as a circular pattern are provided. A multi-piece electronic component 10b is formed by arranging a large number of the formed electronic component regions 10a. In this example, the microelectromechanical mechanism 8 and the electrode 9 are electrically connected via fine wiring (not shown) formed on the main surface of the semiconductor substrate 7, respectively.

次に、図３（ｂ）に示すように、一方主面から他方主面または側面に導出された配線導体２が形成された絶縁基板１と、この絶縁基板１の一方主面に形成された、配線導体２と電気的に接続された接続パッド３と、絶縁基板１の一方主面に接続パッド３を取り囲むようにして接合された枠部材４と、接続パッド３上に形成された、枠部材４と同じ高さの接続端子５とから成る電子部品封止領域６ａを多数個、電子部品の電子部品領域１０ａに対応させて配列形成した多数個取りの電子部品封止用基板６ｂを準備する。   Next, as shown in FIG. 3B, the insulating substrate 1 on which the wiring conductor 2 led out from one main surface to the other main surface or the side surface is formed, and the one main surface of the insulating substrate 1 is formed. A connection pad 3 electrically connected to the wiring conductor 2, a frame member 4 joined so as to surround the connection pad 3 on one main surface of the insulating substrate 1, and a frame formed on the connection pad 3. A plurality of electronic component sealing substrates 6b in which a large number of electronic component sealing regions 6a composed of the connection terminals 5 having the same height as the members 4 are arranged in correspondence with the electronic component regions 10a of the electronic components are prepared. To do.

一方主面から他方主面または側面に導出された配線導体２が形成された絶縁基板１は、例えば、絶縁基板１が酸化アルミニウム質焼結体から成り、配線導体２がタングステンのメタライズ層から成る場合であれば、酸化アルミニウム・酸化珪素・酸化カルシウム等の原料粉末を、有機樹脂・バインダとともに混練してスラリーを得て、このスラリーをドクターブレード法やリップコータ法等によりシート状に成形して複数のグリーンシートを形成し、このグリーンシートの表面に、および必要に応じてグリーンシートにあらかじめ形成しておいた貫通孔内に、タングステンのメタライズペーストを印刷塗布・充填し、その後、これらのグリーンシートを積層して焼成することにより形成することができる。   Insulating substrate 1 on which wiring conductor 2 led out from one main surface to the other main surface or side surface is formed, for example, insulating substrate 1 is made of an aluminum oxide sintered body, and wiring conductor 2 is made of a metallized layer of tungsten. In some cases, raw material powders such as aluminum oxide, silicon oxide, and calcium oxide are kneaded together with an organic resin and a binder to obtain a slurry, and the slurry is formed into a sheet by a doctor blade method, a lip coater method, or the like. A green metal sheet is formed, and a tungsten metallized paste is printed and applied to the surface of the green sheet and into the through-holes previously formed in the green sheet, if necessary. Can be formed by laminating and firing.

なお、これらのグリーンシートのうち、一部のものに打ち抜き加工を施して四角形状等の開口部を形成しておき、これを一方主面側の最表層に配置し、または最表層から内部に向かって数層積層するようにして、焼成後の絶縁基板１の一方主面に、電子部品領域１０ａの配列に対応する凹部１ａが配列形成されるようにしておいてもよい。このように凹部１ａを形成しておくと、この凹部１ａの内側に微小電子機械機構８を収めることができるので、微小電子機械機構８を取り囲むための枠部材4の高さを低く抑えることができ、電子装置の低背化に有利なものとなる。   Of these green sheets, some of them are punched to form square-shaped openings, etc., which are arranged on the outermost layer on one main surface side, or from the outermost layer to the inside. A plurality of layers may be laminated so that the recesses 1a corresponding to the arrangement of the electronic component regions 10a may be formed on one main surface of the fired insulating substrate 1 in an array. If the concave portion 1a is formed in this way, the micro electro mechanical mechanism 8 can be accommodated inside the concave portion 1a, so that the height of the frame member 4 surrounding the micro electro mechanical mechanism 8 can be kept low. This is advantageous for reducing the height of the electronic device.

また、接続パッド３は、通常、配線導体２と同様の材料から成り、例えば、タングステンのペーストを絶縁基板１となるグリーンシートのうち最表面に、配線導体２となる印刷されたタングステンペーストと接続されるようにして、かつ多数個が縦横に配列形成されるようにして、スクリーン印刷法等により印刷しておくことにより形成される。   The connection pad 3 is usually made of the same material as that of the wiring conductor 2. For example, a tungsten paste is connected to the printed tungsten paste to be the wiring conductor 2 on the outermost surface of the green sheet to be the insulating substrate 1. In this manner, a large number are arranged in rows and columns and printed by screen printing or the like.

また、枠部材４は、例えば、鉄−ニッケル−コバルト合金から成る場合であれば、鉄−ニッケル−コバルト合金の金属板に圧延加工や金型による打ち抜き加工またはエッチング加工を行ない、枠状に成形することにより製作される。   Further, if the frame member 4 is made of, for example, an iron-nickel-cobalt alloy, the metal plate of the iron-nickel-cobalt alloy is subjected to a rolling process, a punching process using a mold, or an etching process to form a frame shape. It is manufactured by doing.

枠部材４と絶縁基板１との接合は、錫−銀系等の半田，金−錫ろう等の低融点ろう材や銀−ゲルマニウム系等の高融点ろう材，導電性有機樹脂等の接合材を介して接合する方法、あるいはシーム溶接・電子ビーム溶接等の溶接法により行なうことができる。   The frame member 4 and the insulating substrate 1 are joined by a solder such as a tin-silver solder, a low-melting solder such as gold-tin solder, a high-melting solder such as a silver-germanium, or a conductive organic resin. It can be performed by a method of joining via a welding method or a welding method such as seam welding or electron beam welding.

この枠部材４と同じ高さとなるようにして、接続端子５が接続パッド３上に形成される。接続端子５は、例えば、錫−銀系等の半田から成る場合であれば、この半田のボールを接続パッド３上に位置決めして加熱・溶融・接合させることにより形成される。   Connection terminals 5 are formed on the connection pads 3 so as to have the same height as the frame member 4. If the connection terminal 5 is made of, for example, tin-silver solder, the connection terminal 5 is formed by positioning the solder ball on the connection pad 3 and heating / melting / bonding it.

接続端子５の高さを枠部材４の高さと同じとする方法としては、例えば、接続端子５となる錫−銀半田を溶融させて接続パッド３上に取着形成する際に、その上面を枠部材４と同じ高さとなるようにしてセラミックス製の治具等で押さえておく等の方法を用いることができる。   As a method of making the height of the connection terminal 5 the same as the height of the frame member 4, for example, when the tin-silver solder used as the connection terminal 5 is melted and formed on the connection pad 3, the upper surface thereof is changed. It is possible to use a method such as pressing with a ceramic jig or the like so as to be the same height as the frame member 4.

次に、図３（ｃ）に示すように、電子部品１０ｂを電子部品封止用基板６ｂに対し各電子部品領域１０ａと各電子部品封止領域６ａとを対応させて重ね合わせ、電極７を接続端子５に接合するとともに、微小電子機械機構８の周囲の半導体基板７の主面を枠部材４の主面に接合して、微小電子機械機構８を枠部材４の内側に気密封止する。   Next, as shown in FIG. 3C, the electronic component 10b is superposed on the electronic component sealing substrate 6b so that each electronic component region 10a and each electronic component sealing region 6a correspond to each other, and the electrode 7 is formed. In addition to bonding to the connection terminal 5, the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 is bonded to the main surface of the frame member 4, and the micro electro mechanical mechanism 8 is hermetically sealed inside the frame member 4. .

ここで、電極７と接続端子５との接合は、例えば、接続端子５が錫−銀系半田から成る場合であれば、電極７上に接続端子５を位置合わせして載せ、これらを約２５０℃〜３００℃程度の温度のリフロー炉中で熱処理すること等により行なわれる。   Here, when the electrode 7 and the connection terminal 5 are joined, for example, when the connection terminal 5 is made of tin-silver solder, the connection terminal 5 is aligned and placed on the electrode 7, and these are placed at about 250. For example, the heat treatment is performed in a reflow furnace at a temperature of about from ℃ to 300 ℃.

また、微小電子機械機構８の周囲の半導体基板７の主面と枠部材４の主面との接合は、例えば、この接合面に、接続端子５と同様の錫−銀系の半田を挟んでおき、上述の電極７と接続端子５との接合と同時にリフロー炉中で熱処理することにより行なうことができる。   In addition, the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 and the main surface of the frame member 4 are joined, for example, with a tin-silver solder similar to the connection terminal 5 sandwiched between the joint surfaces. In addition, the heat treatment can be performed in a reflow furnace simultaneously with the joining of the electrode 7 and the connection terminal 5 described above.

この場合、接続端子５の高さを枠部材４の高さと同じとしていることから、電極７と接続端子５との接合と、枠部材４の主面と半導体基板７の主面との接合を容易かつ確実に、同時に行なうことができる。   In this case, since the height of the connection terminal 5 is the same as the height of the frame member 4, the bonding between the electrode 7 and the connection terminal 5 and the bonding between the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 are performed. It can be done easily and reliably at the same time.

このように、本発明の電子装置の製造方法によれば、電子部品領域１０ａの電極７の外部導出のための接合と、微小電子機械機構８の気密封止のための接合とを同時に行なうことができるため、数時間程度を要する半田（ろう）付け等の接合の工程を、従来の製造方法に比べて、確実に少なくとも１工程減らすことができるので、電子装置の生産性を非常に高めることができる。   As described above, according to the method for manufacturing an electronic device of the present invention, the bonding for leading out the electrode 7 in the electronic component region 10a and the bonding for hermetically sealing the microelectromechanical mechanism 8 are simultaneously performed. Therefore, it is possible to reliably reduce at least one step of joining such as soldering that requires several hours as compared with the conventional manufacturing method, so that the productivity of electronic devices is greatly increased. Can do.

そして、図３（ｄ）に示すように、互いに接合された多数個取りの形態の電子部品１０ｂおよび電子部品封止用基板６ｂを電子部品封止領域６ａ毎に分割して、電子部品封止領域６ａが分割された電子部品封止用基板６に電子部品領域１０ａが分割された電子部品１０が接合されて成る個々の電子装置を得る。   Then, as shown in FIG. 3D, the electronic component 10b and the electronic component sealing substrate 6b joined together are divided into the electronic component sealing regions 6a, and the electronic component sealing is performed. Individual electronic devices are obtained in which the electronic component sealing substrate 6 in which the region 6a is divided is joined to the electronic component 10 in which the electronic component region 10a is divided.

互いに接合された、それぞれ多数個取りの形態の電子部品１０ｂおよび電子部品封止用基板６ｂの接合体の切断は、この接合体に対して、ダイシング加工等の切断加工を施すことにより行なうことができる。   Cutting the joined body of the electronic component 10b and the electronic component sealing substrate 6b, which are joined together, in a multi-cavity form, can be performed by subjecting the joined body to a cutting process such as dicing. it can.

本発明の電子装置の製造方法においては、このダイシング加工等の切断加工の際に、各微小電子機械機構８は枠部材４の内側でこの枠部材４と半導体基板７と絶縁基板１とにより気密封止されているので、半導体基板７や絶縁基板１等の切断に伴って発生するシリコンやセラミックス等の切削粉等が微小電子機械機構８に付着することはなく、完成した電子装置において、微小電子機械機構８を確実に正常に作動させることができる。   In the method of manufacturing an electronic device according to the present invention, each microelectromechanical mechanism 8 is separated by the frame member 4, the semiconductor substrate 7, and the insulating substrate 1 inside the frame member 4 during the cutting process such as dicing. Since it is hermetically sealed, cutting powder such as silicon or ceramics generated when the semiconductor substrate 7 or the insulating substrate 1 is cut does not adhere to the microelectromechanical mechanism 8. The electronic mechanical mechanism 8 can be reliably operated normally.

このように、本発明の電子装置の製造方法によれば、従来のように、半導体基板７の主面に多数個を縦横に配列形成した電子部品領域１０ａを切断する際に、その微小電子機械機構８をガラス板等で覆って保護するような工程を別途追加する必要はなく、この、保護のためだけという工程を確実に削除することができるので、電子装置の生産性を非常に高いものとすることができる。   As described above, according to the method for manufacturing an electronic device of the present invention, when cutting the electronic component region 10a in which a large number are vertically and horizontally formed on the main surface of the semiconductor substrate 7 as in the prior art, the microelectronic machine is cut. It is not necessary to add a separate process for protecting the mechanism 8 by covering it with a glass plate or the like, and it is possible to reliably eliminate this process only for protection, so that the productivity of the electronic device is extremely high. It can be.

また、このようにして製造された電子装置は、すでに気密封止されているとともに、その電極が配線導体２を介して外部に導出された状態であるので、これを別途パッケージ内に実装するような工程を追加する必要はなく、配線導体２の導出された部分を外部の電気回路に半田ボール等の外部端子１１を介して接続するだけで、外部電気回路基板に実装して使用することができる。   In addition, the electronic device manufactured in this way is already hermetically sealed, and the electrode is led out to the outside through the wiring conductor 2, so that it is mounted in a separate package. There is no need to add an additional process, and it is possible to mount and use it on an external electric circuit board simply by connecting the lead-out portion of the wiring conductor 2 to an external electric circuit via an external terminal 11 such as a solder ball. it can.

また、この場合、配線導体２は、絶縁基体１の他方主面または側面に導出されているので、外部電気回路に表面実装の形態で接続することができ、高密度に実装することや、外部電気回路の基板を効果的に小型化することができる。   Further, in this case, since the wiring conductor 2 is led out to the other main surface or side surface of the insulating base 1, it can be connected to an external electric circuit in the form of surface mounting, and can be mounted at a high density, The substrate of the electric circuit can be effectively downsized.

なお、本発明は上述の実施の形態の例に限定されるものではなく、本発明の要旨の範囲内であれば、種々の変形は可能である。   In addition, this invention is not limited to the example of above-mentioned embodiment, A various deformation | transformation is possible if it is in the range of the summary of this invention.

例えば、上述の実施の形態の例では一つの電子装置内に一つの微小電子機械機構を気密封止したが、一つの電子装置内に複数の微小電子機械機構を気密封止してもよい。   For example, in the example of the above-described embodiment, one microelectromechanical mechanism is hermetically sealed in one electronic device, but a plurality of microelectromechanical mechanisms may be hermetically sealed in one electronic device.

また、図１に示した例では、配線導体２は絶縁基板１の他方主面側に導出しているが、これを、側面に導出したり、側面および他方主面の両方に導出したりしてもよい。また、この導出された部分の外部電気回路への電気的な接続は、外部端子として半田ボールを介して行なうものに限らず、リード端子や導電性接着剤等を介して行なってもよい。   Further, in the example shown in FIG. 1, the wiring conductor 2 is led out to the other main surface side of the insulating substrate 1, but this is led out to the side surface or led to both the side surface and the other main surface. May be. Further, the electrical connection of the derived portion to an external electric circuit is not limited to being performed via a solder ball as an external terminal, and may be performed via a lead terminal, a conductive adhesive, or the like.

本発明の電子部品封止用基板の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the board | substrate for electronic component sealing of this invention. 本発明の電子部品封止用基板の実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the board | substrate for electronic component sealing of this invention. （ａ）〜（ｄ）は、本発明の電子装置の製造方法の実施の形態の一例をそれぞれ工程順に示した断面図である。(A)-(d) is sectional drawing which showed an example of embodiment of the manufacturing method of the electronic device of this invention in order of the process, respectively. 従来の電子部品封止用基板およびそれを用いて成る電子装置の一例を示す断面図である。It is sectional drawing which shows an example of the conventional board | substrate for electronic component sealing, and an electronic apparatus using the same.

符号の説明Explanation of symbols

１：絶縁基板
２：配線導体
３：接続パッド
４：枠部材
５：接続端子
６：電子部品封止用基板
６ａ：電子部品封止領域
６ｂ：電子部品封止用基板
７：半導体基板
８：微小電子機械機構
９：電極
１０：電子部品
１０ａ：電子部品領域
１０ｂ：電子部品 1: insulating substrate 2: wiring conductor 3: connection pad 4: frame member 5: connection terminal 6: electronic component sealing substrate 6a: electronic component sealing region 6b: electronic component sealing substrate 7: semiconductor substrate 8: minute Electronic mechanical mechanism 9: Electrode 10: Electronic component 10a: Electronic component region 10b: Electronic component

Claims (9)

半導体基板と、該半導体基板の主面に形成される微小電子機械機構と、該微小電子機械機構に対して電気的に接続される電極とを有する電子部品の前記微小電子機械機構を気密封止するための電子部品封止用基板であって、
複数のシートを積層してなる絶縁基板と、一端が前記絶縁基板の一方主面に導出され前記電子部品の前記電極と電気的に接続し、他端が前記絶縁基板の他方主面または側面に導出される配線導体とを備え、前記微小電子機械機構を取り囲むように、接合材を介在させて前記半導体基板および前記絶縁基板を接合することにより前記微小電子機械機構を気密封止し、前記配線導体の前記一端が前記接合部位の内側に位置していることを特徴とする、電子部品封止用基板。 Airtight sealing of the microelectromechanical mechanism of an electronic component having a semiconductor substrate, a microelectromechanical mechanism formed on a main surface of the semiconductor substrate, and an electrode electrically connected to the microelectromechanical mechanism An electronic component sealing substrate for performing
An insulating substrate formed by laminating a plurality of sheets, one end is led out to one main surface of the insulating substrate and electrically connected to the electrode of the electronic component, and the other end is connected to the other main surface or side surface of the insulating substrate. The microelectromechanical mechanism is hermetically sealed by bonding the semiconductor substrate and the insulating substrate with a bonding material interposed therebetween so as to surround the microelectromechanical mechanism. The electronic component sealing substrate, wherein the one end of the conductor is located inside the joining portion. 半導体基板と、該半導体基板の主面に形成される微小電子機械機構と、該微小電子機械機構に対して電気的に接続される電極とを有する電子部品の前記微小電子機械機構を気密封止するための電子部品封止用基板であって、
複数のシートを積層してなる絶縁基板と、一端が前記絶縁基板の一方主面に導出され前記電子部品の前記電極と電気的に接続し、他端が前記絶縁基板の他方主面または側面に導出される配線導体とを備え、前記微小電子機械機構を取り囲むように、前記半導体基板および前記絶縁基板をシーム溶接または電子ビーム溶接によって接合することにより前記微小電子機械機構を気密封止し、前記配線導体の前記一端が前記接合部位の内側に位置していることを特徴とする、電子部品封止用基板。 Airtight sealing of the microelectromechanical mechanism of an electronic component having a semiconductor substrate, a microelectromechanical mechanism formed on a main surface of the semiconductor substrate, and an electrode electrically connected to the microelectromechanical mechanism An electronic component sealing substrate for performing
An insulating substrate formed by laminating a plurality of sheets, one end is led out to one main surface of the insulating substrate and electrically connected to the electrode of the electronic component, and the other end is connected to the other main surface or side surface of the insulating substrate. The micro electro mechanical mechanism is hermetically sealed by joining the semiconductor substrate and the insulating substrate by seam welding or electron beam welding so as to surround the micro electro mechanical mechanism. The electronic component sealing substrate, wherein the one end of the wiring conductor is located inside the joining portion. 前記絶縁基板は枠状シートと平板状シートとを含んでなり、前記枠状シートは前記微小電子機械機構の少なくとも一部を収容するための収容空間を構成する、請求項１または２に記載の電子部品封止用基板。 The said insulating substrate comprises a frame-shaped sheet and a flat sheet, and the said frame-shaped sheet comprises the accommodation space for accommodating at least one part of the said micro electro mechanical mechanism. Electronic component sealing substrate. 前記シートはグリーンシートである、請求項１から３のいずれか一つに記載の電子部品封止用基板。 The electronic component sealing substrate according to claim 1, wherein the sheet is a green sheet. 一端が前記半導体基板と前記絶縁基板との接合部位における該絶縁基板の一方主面に導出され、他端が前記絶縁基板の他方主面または側面に導出される別の配線導体を更に有する、請求項１から４のいずれか一つに記載の電子部品封止用基板。 The wiring board further includes another wiring conductor having one end led to one main surface of the insulating substrate at a joint portion between the semiconductor substrate and the insulating substrate and the other end led to the other main surface or side surface of the insulating substrate. Item 5. The electronic component sealing substrate according to any one of Items 1 to 4. 前記絶縁基板はムライト質焼結体またはガラスセラミックス焼結体からなる、請求項１から５のいずれか一つに記載の電子部品封止用基板。 6. The electronic component sealing substrate according to claim 1, wherein the insulating substrate is made of a mullite sintered body or a glass ceramic sintered body. 前記絶縁基板は窒化アルミニウム質焼結体からなる、請求項１から６のいずれか一つに記載の電子部品封止用基板。 The electronic component sealing substrate according to claim 1, wherein the insulating substrate is made of an aluminum nitride sintered body. 請求項１から７のいずれか一つに記載の電子部品封止用基板を構成する領域を多数有してなることを特徴とする、多数個取り形態の電子部品封止用基板。 An electronic component sealing substrate in a multi-cavity form, comprising a large number of regions constituting the electronic component sealing substrate according to any one of claims 1 to 7. 請求項１から８のいずれか一つに記載の電子部品封止用基板と、前記電子部品とを備えることを特徴とする、電子装置。 An electronic device comprising the electronic component sealing substrate according to claim 1 and the electronic component.
JP2006187834A 2006-07-07 2006-07-07 Board for sealing electronic component, board of multi-patterned form for sealing electronic component, and electronic apparatus Pending JP2006295213A (en)

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