JP4116954B2 - Electronic component sealing substrate and electronic device using the same - Google Patents

Description

The present invention relates to an electronic component sealing device for sealing an electronic component formed by forming an electronic component region formed by forming a microelectromechanical mechanism and an electrode electrically connected to the main surface of a semiconductor substrate. The present invention relates to an electronic device formed by sealing a substrate and a microelectromechanical mechanism of an electronic component using the substrate.

  2. Description of the Related Art In recent years, an electronic component in which a very small electromechanical mechanism, so-called MEMS (Micro Electromechanical System), is formed by applying a processing technique for forming fine wiring such as a semiconductor integrated circuit element on the main surface of a semiconductor substrate such as a silicon wafer. Has been attracting attention, and is being developed for practical use.

  Such micro-electromechanical mechanisms include sensors such as accelerometers, pressure sensors, actuators, micro-mirror devices with movable micro-mirrors, optical devices, micro-chemical systems incorporating micro-pumps, etc. Prototypes have been developed and developed over a very wide field.

  FIG. 4 is a cross-sectional view of an example of a conventional electronic component sealing substrate for configuring an electronic device using an electronic component having such a micro-electromechanical mechanism and an electronic device using the same. In the example shown in FIG. 4, power is supplied to the main surface of the semiconductor substrate 21 on which the micro electro mechanical mechanism 22 is formed, or an electric signal is transmitted from the micro electro mechanical mechanism 22 to an external electric circuit. Is formed by electrically connecting to the micro electro mechanical mechanism 22, and the semiconductor substrate 21, the micro electro mechanical mechanism 22 and the electrode 23 constitute one electronic component 24. .

  Such an electronic component 24 is usually formed in a multi-cavity form in which a large number are arranged on the main surface of the semiconductor substrate 21 in vertical and horizontal directions, as will be described later, and then cut into individual semiconductor substrates 21. In order to prevent foreign matter such as cutting powder from adhering to the microelectromechanical mechanism 22 during this cutting, it is covered and protected with a glass plate 25 or the like. ing.

  The electronic component 24 is accommodated in the recess A of the package 31 having the recess A for storing the electronic component, and the electrode 23 of the electronic component 24 is electrically connected to the electrode pad 32 of the package 31 such as a bonding wire 33. After the connection via the material, the recess A of the package 31 is covered with a lid 34 and the electronic component 24 is hermetically sealed in the recess A, thereby completing the electronic device. In this case, the electronic component 24 needs to be hermetically sealed in a hollow state so as not to hinder the operation of the microelectromechanical mechanism 22.

  For this electronic device, a microelectronic machine hermetically sealed by connecting a lead-out portion of the wiring conductor 35 formed in advance so as to lead out from the electrode pad 32 of the package 31 to an external electric circuit. The mechanism 22 is electrically connected to an external electric circuit through the electrode 23, the bonding wire 33, the electrode pad 32, and the wiring conductor 35.

  In addition, the electronic component 24 is usually manufactured by arranging a large number of elements in the main surface of a large-area semiconductor substrate vertically and horizontally, and the manufacturing method of the electronic device in this case is conventionally as follows. It was a thing. That is, a step 1 of preparing an electronic component in which a large number of electronic component regions formed by forming a micro-electromechanical mechanism 22 and electrodes 23 electrically connected to the main surface of a semiconductor substrate are arranged vertically and horizontally; The step 2 of sealing the micro electro mechanical mechanism 22 of each electronic component 24 with a glass plate 25 or the like so that the periphery thereof is in a hollow state, and cutting processing such as dicing processing on the semiconductor substrate, The electronic component 24 is manufactured by the step 3 for dividing the electronic component 24 and the step 4 for hermetically sealing the individual electronic component 24 in the electronic component storage package 31.

  In such a conventional manufacturing method, it is necessary to seal and protect each of a large number of electronic component regions arranged on the main surface of the semiconductor substrate with a glass plate 25 or the like, The electronic component once sealed with the glass plate 25 is divided into individual electronic components 24 and then hermetically sealed in the package 31 and the electrode 23 is connected to the electrode pad 32 of the package 31 and the like. Due to the necessity of connection, there was a problem that productivity was poor and practical application was difficult.

  To solve this problem, a substrate has been proposed in which a large number of mechanical microelectronic machines 22 arrayed on the main surface of a semiconductor substrate are covered and sealed together. As such a sealing substrate, a semiconductor substrate, a conductive metal plate, and the like are known.

  In the case where the sealing substrate is made of a semiconductor substrate, for example, apart from the first semiconductor substrate in which a large number of electronic component regions are arranged and formed on the main surface, a large number of recesses corresponding to the arrangement of the electronic component regions. A second semiconductor substrate for sealing, in which the first semiconductor substrate is arranged, the second semiconductor substrate is disposed on the main surface of the first semiconductor substrate, and the concave portion of the second semiconductor substrate is an electronic component of the first semiconductor substrate. A technique has been proposed in which an electronic component region (especially a micro-electromechanical mechanism) of a first semiconductor substrate is sealed inside a second semiconductor substrate so as to cover the region (for example, a patent) Reference 1).

  Further, when the sealing substrate is made of a metal plate, a pattern groove is formed in the conductive cover metal plate, and the pattern groove is filled with glass or a ceramic material and flattened. A bonding pattern (electrode pad, etc.) is formed on the electrode, and an electrode of an electronic component is connected to the bonding pattern, and a cover metal plate is bonded to the main surface of the semiconductor substrate. A technique has been proposed in which an electrode pattern for external wiring is formed for sealing and for leading out a bonding pattern to the outside (see, for example, Patent Document 2).

In recent years, electronic components that form a micro electromechanical mechanism, so-called MEMS (Micro Electromechanical System), have been driven at low voltage and speeded up, and harmonic noise that enters from outside of the electronic components. At the same time, harmonic noise included in a signal propagating through the wiring conductor is likely to be emitted to the outside of the electronic component.
JP 2001-144117 A JP 2002-43463 A

  However, when the electronic component region on the main surface of the semiconductor substrate is sealed using the above-described conventional sealing substrate, a large number of electronic component regions can be collectively sealed, for example, a semiconductor In the case of a sealing substrate made of a substrate, wiring conductors cannot be formed three-dimensionally inside the semiconductor substrate, so that the electronic component regions are arranged in the second semiconductor substrate that is the sealing substrate. The wiring conductor cannot be led out from the main surface bonded to the first semiconductor substrate to the other main surface facing the first semiconductor substrate. Therefore, the electrode of the electronic component extends a part of the electrode formed on the main surface of the first semiconductor substrate to the outside of the sealing portion, and this extended portion is used for storing the electronic component via the bonding wire. It must be connected to the electrode pads of the package and external electric circuits, and the mounting process (the process from sealing the electronic component area to completing the electronic device and connecting it to the external electric circuit) is long. There has been a problem that the size of the apparatus becomes large. There is also a problem that surface mounting that is advantageous for downsizing an electronic system incorporating an electronic device cannot be performed.

  In the case of a sealing substrate made of a conductive metal plate or the like, a pattern groove or the like once formed on the surface of the metal plate with glass or ceramic so that a conductive pattern such as an electrode pad can be formed on the metal plate. In this case, it is difficult to shorten the mounting process of the electronic component because it is necessary to form an insulating part by filling the surface of the insulating part or to form a conductor part on the surface of the insulating part during the mounting process. There was a problem.

  Furthermore, in recent years, electronic components having a microelectromechanical mechanism, so-called MEMS (Micro Electromechanical System), have been driven at a low voltage and increased in speed, and harmonic noise invading from the outside of the electronic component. The harmonic noise contained in the signal propagating through the wiring conductor is likely to be emitted to the outside of the electronic component at the same time, so there is a noise generation source at the external proximity position of the electronic component. Electromagnetic noise enters the signal propagating through the wiring conductor deposited on the insulating substrate and propagates to the micro-electromechanical mechanism, causing malfunctions, or affecting the electromagnetic noise at positions near the outside of the electronic component. If there is an electronic device that is easily received, electromagnetic noise emitted from the electronic component may adversely affect the electronic device. There was.

  The present invention has been completed in view of the above-described problems in the prior art, and its purpose is to easily and reliably seal the microelectromechanical mechanism formed on the main surface of the semiconductor substrate, An electronic component on which the electrode formed on the main surface of the semiconductor substrate connected to the microelectromechanical mechanism can be externally connected easily and reliably, for example, in a form that can be surface-mounted, and on which the microelectromechanical mechanism is formed It is an object of the present invention to provide an electronic component sealing substrate that is not easily affected by harmonic noise that enters from the outside of the electronic component, and that harmonic noise included in a signal propagating through a wiring conductor is less likely to be emitted to the outside of the electronic component.

In the following, even if a large number of electronic component regions composed of such micro-electromechanical mechanisms and electrodes are arranged vertically and horizontally on the main surface of the semiconductor substrate, these can be easily and reliably sealed. And a large number of electronic devices formed by sealing micro-electromechanical mechanisms using the sealing substrate, for example, in a form capable of surface mounting. A possible electronic device manufacturing method is also described .

An electronic component sealing substrate according to the present invention is the above-described micro component of an electronic component having a semiconductor substrate, a micro electro mechanical mechanism formed on the main surface of the semiconductor substrate, and an electrode electrically connected to the micro electro mechanical mechanism. An electronic component sealing substrate for hermetically sealing an electronic mechanical mechanism , wherein one main surface is provided on the main surface of the semiconductor substrate and provided on the one main surface of the insulating substrate And a conductive frame-shaped sealing body that surrounds the micro electro mechanical mechanism and hermetically seals the micro mechanical mechanism, and is formed inside the insulating substrate and electrically connected to the electrode. A wiring conductor; and a second wiring conductor formed inside the insulating substrate and electrically connected to the conductive frame-shaped sealing body. One end of the first wiring conductor is led out to the one main surface of the insulating substrate, the other end is led out to the other main surface of the insulating substrate, and one end of the second wiring conductor is one side of the insulating substrate. It is led out to the main surface and electrically connected to the conductive frame-shaped sealing body, and the other end is led out to the other main surface of the insulating substrate. Preferably, at least one of the first wiring conductor and the second wiring conductor includes ferrite in at least a part thereof. Preferably, the one end of the first wiring conductor is located inside the conductive frame-shaped sealing body.

Preferably, the second wiring conductor has a through conductor formed inside the insulating substrate. Preferably, the insulating substrate is a laminated body formed by laminating a plurality of insulating layers, and the second wiring conductor has a through conductor penetrating the insulating layer. Preferably, at least a part of the second wiring conductor is disposed in parallel to the first wiring conductor. Preferably, the insulating substrate is made of a glass ceramic sintered body. The electronic component sealing substrate is preferably formed on the one main surface of the insulating substrate and electrically connected to the one end of the first wiring conductor and on the connection pad. And a connection terminal electrically connected to the electrode. Preferably, when the electronic component sealing substrate is viewed in cross-section, the conductive frame-shaped sealing body is positioned inward from an end portion of the insulating substrate.

The electronic device of the present invention includes an electronic component having a semiconductor substrate, a microelectromechanical mechanism formed on the main surface of the semiconductor substrate, and an electrode electrically connected to the microelectromechanical mechanism, and one main surface is the above-mentioned An insulating substrate bonded to the main surface of the semiconductor substrate, and a conductive frame shape provided on the one main surface of the insulating substrate and surrounding the micro electro mechanical mechanism to hermetically seal the micro mechanical mechanism A sealing body, and a first wiring conductor and a second wiring conductor formed inside the insulating substrate are provided. The first wiring conductor has one end led out to the one main surface of the insulating substrate and electrically connected to the electrode, and the other end led to the other main surface of the insulating substrate, and the second wiring One end of the conductor is led out to the one main surface of the insulating substrate and is electrically connected to the conductive frame-shaped sealing body, and the other end is led out to the other main surface of the insulating substrate. Preferably, both ends of the semiconductor substrate and the insulating substrate are aligned when the electronic device is viewed in cross section. Preferably, when the electronic device is viewed in cross section, the conductive frame-shaped sealing body is located inward from the cross section of the semiconductor substrate.

According to the electronic component sealing substrate of the present invention, an electronic component having a semiconductor substrate, a microelectromechanical mechanism formed on the main surface of the semiconductor substrate, and an electrode electrically connected to the microelectromechanical mechanism. An electronic component sealing substrate for hermetically sealing the microelectromechanical mechanism, wherein one main surface is provided on one main surface of the insulating substrate , the insulating substrate being bonded to the main surface of the semiconductor substrate A conductive frame-shaped sealing body for hermetically sealing the micro mechanical mechanism surrounding the micro electro mechanical mechanism, a first wiring conductor formed inside the insulating substrate and electrically connected to the electrode, A second wiring conductor formed inside the insulating substrate and electrically connected to the conductive frame-shaped sealing body, the first wiring conductor having one end led to one main surface of the insulating substrate and the other end Is led out to the other main surface of the insulating substrate, and the second wiring conductor has one end of the insulating substrate. Square are electrically connected is led to the conductive frame-like sealing body on the main surface, since the other end is led out to the other main surface of the insulating substrate, the electronic component of the micro electronic mechanical system, conductive The frame-shaped sealing body and the insulating substrate can be easily and reliably sealed.

Further, when the height of the main surface of the frame member is the same as the height of the connection terminal formed on the connection pad, when the main surface of the frame member is joined to the main surface of the semiconductor substrate, the semiconductor substrate The electrode formed on the main surface can be easily and reliably connected to the connection terminal. Moreover, the electrode of an electronic component can also be derived | led-out outside from this connection terminal via a connection pad and a wiring conductor.

  In addition, the electronic component sealing substrate of the present invention is formed by using an insulating substrate such as a ceramic multilayer wiring substrate, for example, so that the connection pads and the frame members are formed and bonded to the wiring conductor. From one main surface to the other main surface or side surface, it can be freely formed inside and on the surface of the substrate and led out, and metal bumps for external connection can be attached to the end of the derived wiring conductor, etc. Thus, an electronic device that can be easily surface-mounted on an external electric circuit board can be completed.

  Furthermore, since at least a part of the wiring conductor contains ferrite, it is possible to effectively remove harmonic noise that enters from the outside of the electronic component that forms the micro-electromechanical mechanism, and normal and stable electronic components etc. In addition, it is possible to provide an electronic component sealing substrate in which harmonic noise included in a signal propagating through the wiring conductor is less likely to be emitted to the outside of the electronic component.

  In addition, in the electronic component sealing substrate of the present invention, when a large number of frame members having connection pads and connection terminals formed inside are arranged in the vertical and horizontal directions, a large number of electronic component regions are formed on the main surface of the semiconductor substrate. Even if they are arranged vertically and horizontally, they can be sealed together so that they can be externally connected together.

  In addition, according to the method for manufacturing an electronic device of the present invention, since each of the above steps is provided, connection for external connection of each electrode and a microelectronic machine are performed for a large number of electronic component regions arranged vertically and horizontally. Since the mechanism can be sealed at the same time, a large number of electronic devices composed of electronic components and electronic component sealing substrates bonded to each other can be manufactured easily and reliably.

  In addition, by dividing the electronic component and the electronic component sealing substrate bonded to each other into each electronic component sealing region, a large number of individual electronic devices formed by bonding the electronic component region to the electronic component sealing region can be simultaneously performed. Can be manufactured. At the time of the division, the micro electro mechanical mechanism in the electronic component region is sealed by the sealing substrate, so that the cutting powder of the semiconductor substrate such as silicon generated by the dicing process or the like adheres to the micro electro mechanical mechanism. There is no such thing, and the micro electromechanical mechanism can be reliably operated in the divided electronic device.

  Moreover, since the wiring conductor is led out to the other main surface or side surface of the insulating substrate, the electronic device obtained by dividing the surface can be obtained by simply attaching a terminal such as a metal bump to the lead end. The electronic device can be mounted on the external electric circuit board by mounting or the like, and the mounting process can be made extremely short and easy.

  The electronic component sealing substrate of the present invention and an electronic device manufacturing method using the same will be described in detail below. FIG. 1 is a sectional view showing an example of an embodiment of an electronic component sealing substrate of the present invention. In FIG. 1, 1 is an insulating substrate, 2 is a wiring conductor, 3 is a connection pad, 4 is a frame member, and 5 is a connection terminal. An electronic component sealing substrate 6 is basically formed by the insulating substrate 1, the wiring conductor 2, the connection pad 3, the frame member 4 and the connection terminal 5.

  The electronic component sealing substrate 6 is used to form a microelectromechanical mechanism 8 and an electrode 9 on the main surface (lower surface in the example of FIG. 1) of the semiconductor substrate 7 so as to be electrically connected to each other. By sealing the electronic component 10 formed, an electronic device is formed in which the microelectromechanical mechanism 8 is sealed in a state where it can be externally connected.

  The micro electro mechanical mechanism 8 in the present invention includes, for example, an electric switch, an inductor, a capacitor, a resonator, an antenna, a micro relay, an optical switch, a magnetic head for a hard disk, a microphone, a biosensor, a DNA chip, a microreactor, a print head, an acceleration sensor, It is an electronic device having functions of various sensors such as pressure sensors, display devices, etc., and is a part made by semiconductor micromachining technology, so-called micromachining. The microelectromechanical mechanism 8 has a size of about 10 μm to several hundred μm per element.

  The insulating substrate 1 functions as a lid for sealing the microelectromechanical mechanism 8 and also functions as a base for forming the wiring conductor 2, the connection pad 3, the frame member 4, and the connection terminal 5. The insulating substrate 1 includes ceramic materials such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, and a glass ceramic sintered body. It is formed of an organic resin material such as polyimide or glass epoxy resin, or a composite material formed by bonding inorganic powder such as ceramics or glass with an organic resin such as epoxy resin. For example, when the insulating substrate 1 is made of an aluminum oxide sintered body, a ceramic green sheet (hereinafter also referred to as a green sheet) formed by forming aluminum oxide and a raw material powder such as glass powder on the sheet is laminated and fired. It is formed by doing.

  The insulating substrate 1 is not limited to being formed of an aluminum oxide sintered body, and it is preferable to select a substrate that is suitable for the purpose and the characteristics of the electronic component 10 to be hermetically sealed.

  For example, since the insulating substrate 1 is mechanically bonded to the semiconductor substrate 7 via the frame member 4 as will be described later, the reliability of bonding with the semiconductor substrate 7, that is, the sealing of the micro electro mechanical mechanism 8 is achieved. In order to increase the airtightness, a mullite sintered body, or an aluminum oxide-borosilicate glass system in which the thermal expansion coefficient is approximated to the semiconductor substrate 7 by adjusting the kind and addition amount of the glass component, etc. It is preferable to form a material having a small difference in thermal expansion coefficient from the semiconductor substrate 7 such as a glass ceramic sintered body.

  Further, in the case of preventing the delay of the electrical signal transmitted by the wiring conductor 2, the insulating substrate 1 is made of an organic resin material such as polyimide or glass epoxy resin, or an inorganic powder such as ceramic or glass such as epoxy resin. It is preferable to form a composite material formed by bonding with an organic resin, or a material having a low relative dielectric constant, such as an aluminum oxide-borosilicate glass-based or lithium oxide-based glass ceramic sintered body.

  Further, the insulating substrate 1 has a large heat generation amount of the micro-electromechanical mechanism 8 to be sealed, and heat conduction such as an aluminum nitride sintered body is desirable when heat dissipation is good. It is preferable to form with a material with a large ratio.

  Further, a concave portion 1a may be formed on one main surface of the insulating substrate 1 so as to accommodate the microelectromechanical mechanism 8 of the electronic component 10 inside. If a part of the micro electro mechanical mechanism 8 is accommodated in the recess 1a, the height of the frame member 4 surrounding the micro electro mechanical mechanism 8 can be kept low, which is advantageous for reducing the height of the electronic device. It will be something.

  From one main surface of the insulating substrate 1 (the side on which the micro electro mechanical mechanism 8 is sealed), the wiring conductor 2 is led out to the other main surface or side surface.

  In addition, a connection pad 3 connected to the wiring conductor 2 is formed in a portion inside the frame member 4 on the one main surface side of the insulating substrate 1.

  The wiring conductor 2 and the connection pad 3 are electrically connected to the electrode 9 of the electronic component 10 through the connection terminal 5 formed on the connection pad 3, and this is connected to the other main surface or side surface of the insulating substrate 1. It has a function to derive.

In the electronic component sealing substrate according to the present embodiment, at least a part of the plurality of wiring conductors 2 includes ferrite. Since at least a part of the wiring conductor 2 is made of ferrite and has a high magnetic permeability, it has a high impedance with respect to high frequency components such as harmonics, and the mounted electronic component 10 is driven at high speed. Even if a signal including noise propagates, electromagnetic wave noise generated from the signal is selectively absorbed and removed by the wiring conductor 2 including ferrite, so that the electromagnetic wave noise propagates to an electronic component or the like. 10 is not released to the outside. Thus, always the correct signal is propagated through the wiring conductor 2 in the electronic component 10, it becomes possible to operate the electronic components 10 to be fast driven normally and stably, in accordance with the embodiment The electronic component 10 using the electronic component sealing substrate does not emit electromagnetic noise to the outside.

  As the ferrite for forming the wiring conductor 2 including such ferrite, for example, Mn—Zn ferrite, Ni—Zn ferrite, and Mg—Mn ferrite can be used. In order to form the wiring conductor 2 containing ferrite, a ferrite paste obtained by adding and mixing an appropriate organic solvent and solvent to the ferrite powder is formed as a wiring conductor 2 formed by punching. The through-hole to be printed may be baked after being printed and filled using a conventionally known screen printing method or the like.

  In the present invention, at least a part of the plurality of wiring conductors 2 includes ferrite. However, it is preferable that the wiring conductor 2 in a portion where a high-frequency signal is transmitted includes ferrite. Electromagnetic wave noise from a high-frequency signal propagating through the conductor 2 can be effectively absorbed and removed by the wiring conductor 2 containing ferrite. As a result, the harmonic noise contained in the high-frequency signal propagating through the wiring conductor 2 is not easily affected by harmonic noise entering from outside to the electronic component 10 in which the micro-electromechanical mechanism 8 is formed. There is an advantage that it is possible to provide a substrate for sealing an electronic component which is not easily released. Further, all of the plurality of wiring conductors 2 may contain ferrite.

  The connection pad 3 is formed of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, or manganese. As a means for forming the connection pad 3, means for depositing a metal as a thin film layer, such as a metallized layer forming method, a plating method, a vapor deposition method, or the like can be used. For example, when the connection pad 3 is made of a metallized layer of tungsten, the connection pad 3 is formed by printing a tungsten paste on a green sheet to be the insulating substrate 1 and baking it together with the green sheet.

  The connection terminal 5 is made of solder such as tin-silver, tin-silver-copper, low melting point brazing material such as gold-tin brazing, high melting point brazing material such as silver-germanium, conductive organic resin, Alternatively, it is formed of a metal material or the like that enables joining by a welding method such as seam welding or electron beam welding.

  By joining the connection terminal 5 to the electrode 9 of the electronic component 10, the electrode 9 of the electronic component 10 is connected to the other main surface or side surface of the insulating substrate 1 via the connection terminal 5, the connection pad 3 and the wiring conductor 2. Derived. Then, the electrode 9 of the electronic component 10 is electrically connected to the external electric circuit by joining the derived end portion to the external electric circuit via tin-lead solder or the like.

  A frame member 4 is joined to one main surface of the insulating substrate 1 so as to surround the connection pad 3. The frame member 4 functions as a side wall for hermetically sealing the microelectromechanical mechanism 8 of the electronic component 10 inside thereof. By joining the main surface (upper surface in the example of FIG. 1) of the frame member 4 to the main surface (lower surface in the example of FIG. 1) of the electronic component 10, the micro electromechanical mechanism 8 is hermetically sealed inside the frame member 4. Stopped. In this case, the semiconductor substrate 7 serves as a bottom plate and the insulating substrate 1 serves as a lid.

  The frame member 4 is made of iron-nickel alloy such as iron-nickel-cobalt alloy or iron-nickel alloy, metal material such as oxygen-free copper, aluminum, stainless steel, copper-tungsten alloy, copper-molybdenum alloy, or aluminum oxide. It is made of an inorganic material such as a sintered material and a glass ceramic sintered material, or an organic resin material such as PTFE (polytetrafluoroethylene) and glass epoxy resin.

  Further, as a method for joining the main surface of the frame member 4 to the main surface of the semiconductor substrate 7 of the electronic component 10, solder such as tin-silver type, low melting point brazing material such as gold-tin brazing, silver-germanium type, etc. It is possible to use a bonding method such as a high melting point brazing material, a conductive organic resin, or a welding method such as seam welding or electron beam welding.

  Then, with respect to the electronic component 10 in which the microelectromechanical mechanism 8 and the electrode 9 electrically connected thereto are formed on the main surface of the semiconductor substrate 7, the electrode 9 is joined to the connection terminal 5. By joining the surface to the main surface of the frame member 4, an electronic device in which the microelectromechanical mechanism 8 of the electronic component 10 is hermetically sealed inside the frame member 4 is formed.

  By connecting the lead-out portion of the wiring conductor 2 of this electronic device to an external electric circuit via an external terminal 11 such as a solder ball, the microelectromechanical mechanism 8 is electrically connected to the external electric circuit.

  As shown in FIG. 1, a conductor layer 3a is formed of the same material as that of the connection pad 3 on the main surface of the insulating substrate 1 to which the frame member 4 is bonded. A part of the wiring conductor 2 may be led out over the other main surface. The lead-out portion of the wiring conductor 2 led out from the conductor layer 3a can be connected to the grounding terminal of the external electric circuit or the like via the above-described external terminal 11 or the like.

  In this case, in order to enable the bonding of the connection terminal 5 and the electrode 9 and the bonding of the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 to be performed reliably and easily in one step, the connection terminal The height of 5 and the height of the frame member 4 need to be the same height.

In addition, the electronic component sealing substrate 6 according to the present embodiment has a connection pad 3 and a frame member 4 as one main substrate of a large area as shown in a sectional view in FIG. It is preferable to use a so-called multi-cavity form in which the surfaces are arranged vertically and horizontally. In FIG. 2, the same parts as those in FIG.

  If such a large number is taken, usually, a multi-chip form in which a large number of microelectromechanical mechanisms 8 and electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7. A large number of electronic components 10 manufactured in the above can be hermetically sealed at the same time, and the productivity can be improved.

  Further, in this way, an electronic component 10 manufactured in a multi-cavity form in which a large number of microelectromechanical mechanisms 8 and electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7. Are collectively sealed, the semiconductor substrate 7 (and the electronic component sealing substrate 6) is subjected to a cutting process such as a dicing process and divided into individual electronic components 10 (electronic devices). Accordingly, it is possible to effectively prevent the occurrence of a problem that the cutting powder or the like generated along with the microelectromechanical mechanism 8 adheres to the microelectromechanical mechanism 8 and interferes with its operation.

Next, a method for manufacturing an electronic device using the electronic component sealing substrate 6 according to the present embodiment will be described with reference to FIGS. FIG. 3 is a cross-sectional view showing an example of an embodiment of an electronic device manufacturing method according to this embodiment in the order of steps. In FIG. 3, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals. .

  First, as shown in FIG. 3A, a large number of electronic component regions 10a each having a microelectromechanical mechanism 8 and electrodes 9 electrically connected to the main surface of a semiconductor substrate 7 are formed vertically and horizontally. A multi-piece electronic component 10b having an array formed is prepared.

  The semiconductor substrate 7 is made of a silicon substrate such as a single crystal or polycrystal. A silicon oxide layer is formed on the surface of the silicon substrate, and by applying a fine wiring processing technique such as photolithography, a micro electromechanical mechanism 8 such as a minute vibrating body and an electrode 9 made of a conductor such as a circular pattern are provided. A multi-piece electronic component 10b is formed by arranging a large number of the formed electronic component regions 10a. In this example, the microelectromechanical mechanism 8 and the electrode 9 are electrically connected via fine wiring (not shown) formed on the main surface of the semiconductor substrate 7, respectively.

  Next, as shown in FIG. 3B, the insulating substrate 1 on which the wiring conductor 2 led out from the one main surface to the other main surface or the side surface is formed, and the one main surface of the insulating substrate 1 is formed. A connection pad 3 electrically connected to the wiring conductor 2, a frame member 4 joined so as to surround the connection pad 3 on one main surface of the insulating substrate 1, and a frame member formed on the connection pad 3 A plurality of electronic component sealing substrates 6b are prepared in which a large number of electronic component sealing regions 6a composed of connection terminals 5 having the same height as 4 are arranged in correspondence with the electronic component regions 10a of the electronic components. .

  Insulating substrate 1 on which wiring conductor 2 led out from one main surface to the other main surface or side surface is formed, for example, insulating substrate 1 is made of an aluminum oxide sintered body, and wiring conductor 2 is made of a ferrite metallized layer. In some cases, raw powders such as aluminum oxide, silicon oxide, and calcium oxide are kneaded together with an organic resin binder to obtain a slurry, and this slurry is formed into a sheet shape by a doctor blade method, a lip coater method, or the like. A green sheet is formed, and ferrite metallized paste is printed and filled into the surface of the green sheet and, if necessary, through holes previously formed in the green sheet, and then the green sheets are laminated. Then, it can be formed by firing.

  Of these green sheets, some of them are punched to form square-shaped openings, etc., which are arranged on the outermost layer on one main surface side, or from the outermost layer to the inside. A plurality of layers may be laminated so that the recesses 1a corresponding to the arrangement of the electronic component regions 10a may be formed on one main surface of the insulating substrate 1 after firing. If the concave portion 1a is formed in this way, the micro electro mechanical mechanism 8 can be accommodated inside the concave portion 1a, so that the height of the frame member 4 surrounding the micro electro mechanical mechanism 8 can be kept low. This is advantageous for reducing the height of the electronic device.

  Moreover, as a ferrite for forming the wiring conductor 2 containing a ferrite, Mn-Zn system ferrite, Ni-Zn system ferrite, and Mg-Mn system ferrite can be used, for example. In order to form the wiring conductor 2 containing ferrite, a ferrite paste obtained by adding and mixing an appropriate organic solvent and solvent to the ferrite powder is formed as a wiring conductor 2 formed by punching. The through-hole to be printed may be baked after being printed and filled using a conventionally known screen printing method or the like.

  In addition, for example, the connection pads 3 are arranged such that tungsten paste is connected to the printed paste to be the wiring conductor 2 on the outermost surface of the green sheet to be the insulating substrate 1, and many are arranged vertically and horizontally. It is formed by printing by a screen printing method or the like.

  Further, if the frame member 4 is made of, for example, an iron-nickel-cobalt alloy, the metal plate of the iron-nickel-cobalt alloy is subjected to a rolling process, a punching process using a mold, or an etching process to form a frame shape. It is manufactured by doing.

  The frame member 4 and the insulating substrate 1 are joined by a solder such as a tin-silver solder, a low-melting solder such as gold-tin solder, a high-melting solder such as a silver-germanium, or a conductive organic resin. It can be carried out by a method of joining via a welding method or a welding method such as seam welding or electron beam welding.

  Connection terminals 5 are formed on the connection pads 3 so as to have the same height as the frame member 4. If the connection terminal 5 is made of, for example, tin-silver solder, the connection terminal 5 is formed by positioning the solder balls on the connection pads 3, heating and melting them, and bonding them.

  As a method of making the height of the connection terminal 5 the same as the height of the frame member 4, for example, when the tin-silver solder to be the connection terminal 5 is melted and formed on the connection pad 3, its upper surface is changed. It is possible to use a method such as pressing with a ceramic jig or the like so as to be the same height as the frame member 4.

  Next, as shown in FIG. 3C, the electronic component 10b is superimposed on the electronic component sealing substrate 6b so that each electronic component region 10a and each electronic component sealing region 6a correspond to each other. In addition to bonding to the connection terminal 5, the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 is bonded to the main surface of the frame member 4, and the micro electro mechanical mechanism 8 is hermetically sealed inside the frame member 4. .

  Here, for example, when the connection terminal 5 is made of tin-silver solder, the connection terminal 5 is aligned and placed on the electrode 9 and the connection between the electrode 9 and the connection terminal 5 is about 250. For example, the heat treatment is performed in a reflow furnace at a temperature of about -30 ° C.

  In addition, the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 and the main surface of the frame member 4 are joined, for example, with a tin-silver solder similar to the connection terminal 5 sandwiched between the joint surfaces. In addition, the heat treatment can be performed in the reflow furnace simultaneously with the joining of the electrode 9 and the connection terminal 5 described above.

  In this case, since the height of the connection terminal 5 is the same as the height of the frame member 4, the bonding between the electrode 9 and the connection terminal 5 and the bonding between the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 are performed. It can be done easily and reliably at the same time.

As described above, according to the method for manufacturing the electronic device according to the present embodiment, the bonding for leading out the electrode 9 in the electronic component region 10a and the bonding for hermetically sealing the microelectromechanical mechanism 8 are performed simultaneously. Since it can be performed, it is possible to reliably reduce at least one step of joining such as soldering (brazing), which takes about several hours, as compared with the conventional manufacturing method. Can be increased.

  Then, as shown in FIG. 3D, the electronic component 10b and the electronic component sealing substrate 6b joined together are divided into the electronic component sealing regions 6a, and the electronic component sealing is performed. Individual electronic devices are obtained in which the electronic component 10 divided in the electronic component region 10a is bonded to the electronic component sealing substrate 6 divided in the region 6a.

  The joined body of the electronic component 10b and the electronic component sealing substrate 6b, which are joined together, can be cut by subjecting the joined body to a cutting process such as dicing. .

In the manufacturing method of the electronic device according to the present embodiment , each microelectromechanical mechanism 8 is formed by the frame member 4, the semiconductor substrate 7, and the insulating substrate 1 inside the frame member 4 during the cutting process such as dicing. Since it is hermetically sealed, cutting powder such as silicon or ceramics generated by cutting the semiconductor substrate 7 or the insulating substrate 1 does not adhere to the microelectromechanical mechanism 8, and in the completed electronic device, The micro electromechanical mechanism 8 can be reliably operated normally.

As described above, according to the manufacturing method of the electronic device according to the present embodiment, when the electronic component region 10a in which a large number are vertically and horizontally formed on the main surface of the semiconductor substrate 7 is cut, It is not necessary to separately add a process for protecting the electronic mechanical mechanism 8 with a glass plate or the like, and a conventional process only for protecting the micro electronic mechanical mechanism 8 can be reliably deleted. The productivity can be made extremely high.

In addition, the electronic device manufactured by the manufacturing method according to the present embodiment is already hermetically sealed and the electrode is led out to the outside via the wiring conductor 2. There is no need to add a process such as mounting to the external electric circuit, and the portion where the wiring conductor 2 is led out is connected to the external electric circuit via the external terminal 11 such as a solder ball and mounted on the external electric circuit board. be able to.

  In this case, since the wiring conductor 2 is led out to the other main surface or side surface of the insulating base 1, it can be connected to an external electric circuit in the form of surface mounting, and can be mounted with high density. The external electric circuit board can be effectively downsized.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist of the present invention. For example, in the example of the above-described embodiment, one microelectromechanical mechanism is hermetically sealed in one electronic device, but a plurality of microelectromechanical mechanisms may be hermetically sealed in one electronic device. In the example of FIG. 1, the wiring conductor 2 is led out to the other main surface side of the insulating substrate 1, but it may be led out to the side surface or to both the side surface and the other main surface. In addition, the electrical connection of the lead-out portion of the wiring conductor 2 to an external electric circuit is not limited to being performed via a solder ball as an external terminal, but may be performed via a lead terminal or a conductive adhesive. Good.

It is sectional drawing which shows an example of embodiment of the board | substrate for electronic component sealing of this invention. It is sectional drawing which shows the other example of embodiment of the board | substrate for electronic component sealing of this invention. (A)-(d) is sectional drawing which showed an example of embodiment of the manufacturing method of the electronic device of this invention in order of the process, respectively. It is sectional drawing which shows an example of the conventional board | substrate for electronic component sealing, and an electronic apparatus using the same.

Explanation of symbols

1: insulating substrate 2: wiring conductor 3: connection pad 4: frame member 5: connection terminal 6: electronic component sealing substrate 6a: electronic component sealing region 6b: electronic component sealing substrate 7: semiconductor substrate 8: minute Electromechanical mechanism 9: Electrode
10: Electronic components
10a: Electronic component area
10b: Electronic component

Claims (12)

Electrons for hermetically sealing the microelectromechanical mechanism of an electronic component having a semiconductor substrate, a microelectromechanical mechanism formed on a main surface of the semiconductor substrate, and an electrode electrically connected to the microelectromechanical mechanism A component sealing substrate,
On the other hand, an insulating substrate whose main surface is bonded to the main surface of the semiconductor substrate;
A conductive frame-shaped sealing body provided on the one main surface of the insulating substrate and surrounding the microelectromechanical mechanism to hermetically seal the micromechanical mechanism;
A first wiring conductor formed inside the insulating substrate and electrically connected to the electrode;
A second wiring conductor formed inside the insulating substrate and electrically connected to the conductive frame-shaped sealing body;
With
One end of the first wiring conductor is led out to the one main surface of the insulating substrate, and the other end is led out to the other main surface of the insulating substrate,
One end of the second wiring conductor is led out to the one main surface of the insulating substrate and is electrically connected to the conductive frame-shaped sealing body, and the other end is led out to the other main surface of the insulating substrate. A substrate for encapsulating electronic components, wherein:   The electronic component sealing substrate according to claim 1, wherein at least one of the first wiring conductor and the second wiring conductor includes ferrite in at least a part thereof. 3. The electronic component sealing substrate according to claim 1, wherein the one end of the first wiring conductor is located inside the conductive frame-shaped sealing body . 4. 4. The electronic component sealing substrate according to claim 1, wherein the second wiring conductor has a through conductor formed inside the insulating substrate. 5.   The insulating substrate is a laminate formed by laminating a plurality of insulating layers,
  4. The electronic component sealing substrate according to claim 1, wherein the second wiring conductor has a through conductor penetrating the insulating layer. 5.   6. The electronic component sealing substrate according to claim 1, wherein at least a part of the second wiring conductor is disposed in parallel with the first wiring conductor. 7.   The electronic component sealing substrate according to any one of claims 1 to 6, wherein the insulating substrate is made of a glass ceramic sintered body. A connection pad formed on the one main surface of the insulating substrate and electrically connected to the one end of the first wiring conductor;
The connection is formed on the pad, an electronic component sealing substrate according to any one of claims 1 to 7, characterized in that it comprises a said electrode is electrically connected to Ru connection terminal. 9. The electronic component according to claim 1, wherein the conductive frame-shaped sealing body is positioned inward from an end portion of the insulating substrate when viewed in cross section. Substrate for sealing.   An electronic component having a semiconductor substrate, a microelectromechanical mechanism formed on a main surface of the semiconductor substrate, and an electrode electrically connected to the microelectromechanical mechanism;
  On the other hand, an insulating substrate whose main surface is bonded to the main surface of the semiconductor substrate;
  A conductive frame-shaped sealing body that is provided on the one main surface of the insulating substrate and surrounds the microelectromechanical mechanism to hermetically seal the micromechanical mechanism;
  A first wiring conductor and a second wiring conductor formed inside the insulating substrate;
With
  One end of the first wiring conductor is led out to the one main surface of the insulating substrate and is electrically connected to the electrode, and the other end is led out to the other main surface of the insulating substrate,
  One end of the second wiring conductor is led out to the one main surface of the insulating substrate and is electrically connected to the conductive frame-shaped sealing body, and the other end is led out to the other main surface of the insulating substrate. An electronic device characterized by being made.   The electronic device according to claim 10, wherein both ends of the semiconductor substrate and the insulating substrate are aligned when viewed in cross section.   12. The electronic device according to claim 10, wherein the conductive frame-shaped sealing body is positioned inward from a cross section of the semiconductor substrate when viewed in cross section.

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