JP2005212016A - Electronic part sealing substrate, electronic part sealing substrate for installing a large number and method of manufacturing electronic device - Google Patents

Electronic part sealing substrate, electronic part sealing substrate for installing a large number and method of manufacturing electronic device Download PDF

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JP2005212016A
JP2005212016A JP2004020585A JP2004020585A JP2005212016A JP 2005212016 A JP2005212016 A JP 2005212016A JP 2004020585 A JP2004020585 A JP 2004020585A JP 2004020585 A JP2004020585 A JP 2004020585A JP 2005212016 A JP2005212016 A JP 2005212016A
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main surface
electronic component
substrate
frame member
insulating substrate
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Itaru Ishii
格 石井
Katsuyuki Yoshida
克亨 吉田
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/94Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic part sealing substrate superior in productivity, electric responsiveness and noise cut performance, when manufacturing an electronic device by airtightly sealing a microelectronic machine mechanism of a main surface of a semiconductor substrate. <P>SOLUTION: This electronic part sealing substrate 6 is composed of an insulating substrate 1 forming a wiring conductor 2 derived to the other main surface or a side surface from one main surface, a connecting pad 3 formed on its one main surface and connected with the wiring conductor 2, a frame member 4 joined to the one main surface of the insulating substrate 1 by surrounding the connecting pad 3, a connecting terminal 5 formed on the connecting pad 3 and having the same height as the frame member 4, an electronic element storing recessed part 12 formed on the other main surface of the insulating substrate 1, and an element connecting pad 13 formed inside the recessed part 12 and electrically connected to the wiring conductor 2. The substrate is constituted by airtightly sealing the microelectronic machine mechanism 8 inside the frame member 4, by joining the main surface of the semiconductor substrate 7 to the main surface of the frame member 4, by joining an electrode 9 of an electronic part 10 forming the microelectronic machine mechanism 8 and the electrode 9 connected to this mechanism on the main surface of the semiconductor substrate 7, to the connecting terminal 5. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、半導体基板の主面に、微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品領域を形成して成る電子部品を封止するための電子部品封止用基板、および多数個取り用電子部品封止用基板、ならびに電子部品の微小電子機械機構を封止することにより形成される電子装置の製造方法に関するものである。   The present invention provides an electronic component sealing method for sealing an electronic component formed by forming an electronic component region formed by forming a microelectromechanical mechanism and an electrode electrically connected to the main surface of a semiconductor substrate. The present invention relates to a method for manufacturing an electronic device formed by sealing a substrate for use, a substrate for encapsulating multiple electronic components, and a microelectromechanical mechanism of the electronic component.

近年、シリコンウェーハ等の半導体基板の主面に、半導体集積回路素子等の微細配線を形成する加工技術を応用して、極めて微小な電子機械機構、いわゆるMEMS(Micro Electromechanical System)を形成した電子部品が注目され、実用化に向けて開発が進められている。   2. Description of the Related Art In recent years, an electronic component in which a very small electromechanical mechanism, a so-called MEMS (Micro Electromechanical System), is formed by applying a processing technique for forming fine wiring such as a semiconductor integrated circuit element on a main surface of a semiconductor substrate such as a silicon wafer. Has been attracting attention, and is being developed for practical use.

このような微小電子機械機構としては、加速度計、圧力センサ、アクチュエータ等のセンサや、微細な鏡面体を可動式に形成したマイクロミラーデバイス、光デバイス、あるいはマイクロポンプ等を組み込んだマイクロ化学システム等、非常に広い分野にわたるものが試作、開発されている。   Such microelectromechanical mechanisms include sensors such as accelerometers, pressure sensors, and actuators, micromirror devices with movable micromirrors, optical devices, microchemical systems incorporating micropumps, etc. Prototypes have been developed and developed over a very wide field.

そのような微小電子機械機構を形成した電子部品を用いて電子装置を構成するための従来の電子部品封止用基板およびそれを用いて成る電子装置の一例を図4に断面図で示す。図4に示す例では、微小電子機械機構22が形成された半導体基板21の主面には、微小電子機械機構22に電力を供給したり、微小電子機械機構22から外部の電気回路に電気信号を送り出したりするための電極23が微小電子機械機構22と電気的に接続されて形成されており、これら半導体基板21、微小電子機械機構22および電極23により、1つの電子部品24が構成される。   FIG. 4 is a cross-sectional view of an example of a conventional electronic component sealing substrate for configuring an electronic device using an electronic component having such a micro-electromechanical mechanism and an electronic device using the same. In the example shown in FIG. 4, power is supplied to the main surface of the semiconductor substrate 21 on which the micro electro mechanical mechanism 22 is formed, or an electric signal is transmitted from the micro electro mechanical mechanism 22 to an external electric circuit. Is formed by being electrically connected to the micro electro mechanical mechanism 22, and the semiconductor substrate 21, the micro electro mechanical mechanism 22, and the electrode 23 constitute one electronic component 24. .

なお、このような電子部品24は、通常、後述するように、半導体基板21の主面に多数個が縦横に配列形成された多数個取りの形態で形成した後、個々の半導体基板21に切断することにより製作されるので、この切断の際に切削粉等の異物が微小電子機械機構22に付着して作動の妨げになることを防止するために、ガラス板25等で覆われて保護されている。   Such electronic components 24 are usually formed in a multi-cavity form in which a large number are arranged on the main surface of the semiconductor substrate 21 in vertical and horizontal directions, as will be described later, and then cut into individual semiconductor substrates 21. In order to prevent foreign matter such as cutting powder from adhering to the microelectromechanical mechanism 22 and hindering operation during this cutting, it is covered and protected by a glass plate 25 or the like. ing.

そして、この電子部品24を、電子部品収納用の凹部Aを有するパッケージ31の凹部A内に収納するとともに、電子部品24の電極23をパッケージ31の電極パッド32にボンディングワイヤ33等の導電性接続材を介して接続した後、パッケージ31の凹部Aを蓋体34で覆って電子部品24を凹部A内に気密封止することにより、電子装置として完成する。この場合、電子部品24は、微小電子機械機構22の動作を妨げないようにするため、中空状態で気密封止する必要がある。   The electronic component 24 is accommodated in the recess A of the package 31 having the recess A for storing the electronic component, and the electrode 23 of the electronic component 24 is electrically connected to the electrode pad 32 of the package 31 such as a bonding wire 33. After the connection via the material, the recess A of the package 31 is covered with the lid 34 and the electronic component 24 is hermetically sealed in the recess A, thereby completing the electronic device. In this case, the electronic component 24 needs to be hermetically sealed in a hollow state so as not to hinder the operation of the microelectromechanical mechanism 22.

この電子装置について、あらかじめパッケージ31の電極パッド32から外表面に導出するようにして形成しておいた配線導体35の導出部分を外部電気回路に接続することにより、気密封止された微小電子機械機構22が、電極23、ボンディングワイヤ33、電極パッド32および配線導体35を介して外部の電気回路と電気的に接続される。   With respect to this electronic device, a lead-out portion of the wiring conductor 35 formed so as to lead out from the electrode pad 32 of the package 31 to the outer surface in advance is connected to an external electric circuit, so that the microelectronic machine is hermetically sealed. The mechanism 22 is electrically connected to an external electric circuit through the electrode 23, the bonding wire 33, the electrode pad 32, and the wiring conductor 35.

また、このような電子部品24は、通常、広面積の半導体基板の主面に多数個を縦横に配列形成させることにより製作されており、この場合の電子装置の製造方法は、従来、以下のようなものであった。すなわち、
1、半導体基板の主面に、微小電子機械機構22およびこれに電気的に接続された電極23が形成されて成る電子部品領域を多数個、縦横に配列形成した電子部品を準備する工程と、
2、各電子部品の微小電子機械機構22を、その周囲が中空状態となるようにして、ガラス板25等で覆って封止する工程と、
3、半導体基板にダイシング加工等の切断加工を施して、個々の電子部品24に分割する工程と、
4、個々の電子部品24を、電子部品収納用パッケージ31内に気密封止する工程と、により製作される。
In addition, such an electronic component 24 is usually manufactured by arranging a large number of elements vertically and horizontally on the main surface of a large-area semiconductor substrate. In this case, a method for manufacturing an electronic device is conventionally as follows. It was something like that. That is,
1. a step of preparing an electronic component in which a plurality of electronic component regions formed by forming micro-electromechanical mechanisms 22 and electrodes 23 electrically connected to the micro-mechanical mechanism 22 on a main surface of a semiconductor substrate are arranged vertically and horizontally;
2, the step of covering and sealing the microelectromechanical mechanism 22 of each electronic component with a glass plate 25 or the like so that the periphery thereof is in a hollow state;
3. The semiconductor substrate is subjected to a cutting process such as a dicing process and divided into individual electronic components 24;
4. The electronic component 24 is manufactured by hermetically sealing the electronic component 24 in the electronic component storage package 31.

このような従来の製造方法においては、半導体基板の主面に配列形成された多数の電子部品領域の1個ずつをガラス板25等で封止して保護しておく必要があること、また、一旦ガラス板25で封止した電子部品を、個片の電子部品24に分割した後、改めてパッケージ31内に気密封止するとともに、その電極23をパッケージ31の電極パッド32等に接続して外部接続させる必要があること、等のため、生産性が悪く、実用化が難しいという問題があった。   In such a conventional manufacturing method, it is necessary to seal and protect each one of a large number of electronic component regions arranged on the main surface of the semiconductor substrate with a glass plate 25 or the like, The electronic component once sealed with the glass plate 25 is divided into individual electronic components 24 and then hermetically sealed in the package 31 and the electrode 23 is connected to the electrode pad 32 of the package 31 and the like. Due to the necessity of connection, etc., there was a problem that productivity was poor and practical application was difficult.

この問題に対し、半導体基板の主面に配列形成された多数個の微小電子機械機構22を一括して覆い、封止するような基板が提案されている。このような封止用の基板としては、半導体基板を材料とするものや導電性の金属板等を材料にするもの等が知られている。   In order to solve this problem, a substrate has been proposed in which a large number of microelectromechanical mechanisms 22 arranged and formed on the main surface of a semiconductor substrate are collectively covered and sealed. As such a sealing substrate, a substrate made of a semiconductor substrate, a substrate made of a conductive metal plate, or the like is known.

封止用の基板が半導体基板から成る場合、例えば、主面に多数個の電子部品領域が配列形成された第1の半導体基板とは別に、この電子部品領域の配列に対応させて多数の凹部を配列形成した封止用の第2の半導体基板を準備し、第1の半導体基板の主面上に第2の半導体基板を、第2の半導体基板の凹部が第1の半導体基板の電子部品領域を覆うようにして接合し、第2の半導体基板に内側に第1の半導体基板の電子部品領域(特に微小電子機械機構)を封止するようにした技術が提案されている(例えば、特許文献1参照)。   In the case where the sealing substrate is made of a semiconductor substrate, for example, apart from the first semiconductor substrate in which a large number of electronic component regions are arranged and formed on the main surface, a large number of recesses corresponding to the arrangement of the electronic component regions. A second semiconductor substrate for sealing, in which the first semiconductor substrate is arranged, the second semiconductor substrate is disposed on the main surface of the first semiconductor substrate, and the concave portion of the second semiconductor substrate is an electronic component of the first semiconductor substrate. A technique has been proposed in which an electronic component region (especially a micro-electromechanical mechanism) of a first semiconductor substrate is sealed inside a second semiconductor substrate so as to cover the region (for example, a patent) Reference 1).

また、封止用の基板が導電性を有する金属板から成る場合、導電性を有するカバー用の金属板に所定パターンの溝を形成するとともに、この溝をガラスやセラミック材料で充填して平坦化させた後、その上にボンディング用の導体パターン(電極パッド等)を形成し、この導体パターンに電子部品の電極を接続するとともに金属板を半導体基板の主面に接合し、その後、電子部品領域をセラミックやガラス等で封着するとともに、導体パターンを外部に導出するための外部配線用電極パターンを形成するようにした技術が提案されている(例えば、特許文献2参照。)。   In addition, when the sealing substrate is made of a conductive metal plate, a groove having a predetermined pattern is formed in the conductive metal plate for the cover, and the groove is filled with glass or a ceramic material to be flattened. After that, a conductor pattern for bonding (electrode pad, etc.) is formed thereon, an electrode of an electronic component is connected to this conductor pattern, and a metal plate is bonded to the main surface of the semiconductor substrate, and then an electronic component region Has been proposed in which an electrode pattern for external wiring for leading a conductor pattern to the outside is formed (see, for example, Patent Document 2).

また、微小電子機械機構、いわゆるMEMS(Micro Electromechanical System)を成した電子部品においては、近年、微小電子機械機構の応答精度の上昇、長時間駆動などが行われることから、微小電子機械機構の低消費電力化、電力応答性の向上が求められてきている。   In addition, in an electronic component that forms a microelectromechanical mechanism, so-called MEMS (Micro Electromechanical System), in recent years, the response accuracy of the microelectromechanical mechanism has been increased and long-time driving has been performed. There has been a demand for improved power consumption and improved power responsiveness.

また、MEMS領域で消費される電力が供給不足になり、微小電子機械機構が正常に駆動しないため、微小電子機械機構の電気特性の変化や微小電子機械機構領域の破壊などが起こるものとなってきている。さらにこの問題点を解決するために、大容量のチップコンデンサを微小電子機械機構の近傍に実装する手法が取られており、実装面積が大きくなっている。   In addition, since the power consumed in the MEMS region is insufficiently supplied and the microelectromechanical mechanism is not driven normally, a change in electrical characteristics of the microelectromechanical mechanism or destruction of the microelectromechanical region may occur. ing. Furthermore, in order to solve this problem, a method of mounting a large-capacity chip capacitor in the vicinity of the microelectromechanical mechanism is taken, and the mounting area is increased.

また、MEMS外部から配線導体を伝わり外部より伝播してきた高周波ノイズにより電気特性の変化やMEMS領域の破壊などが起こると同時に、配線導体を伝播する信号に含まれる高調波ノイズが電子部品外部に放出されやすいものとなっている。さらにこの問題を解決するために、チップインダクタをMEMSの近傍に実装する手法が取られており、実装面積が大きくなっている。
特開2001−144117号公報 特開2002−43463号公報
Also, high-frequency noise transmitted from the outside of the MEMS to the wiring conductor and propagated from the outside causes changes in electrical characteristics and destruction of the MEMS region, and at the same time, harmonic noise contained in the signal propagating through the wiring conductor is emitted to the outside of the electronic component. It is easy to be done. Further, in order to solve this problem, a technique of mounting a chip inductor in the vicinity of the MEMS is taken, and the mounting area is increased.
JP 2001-144117 A JP 2002-43463 A

しかしながら、このような従来の封止用基板を用いて半導体基板の主面の電子部品領域を封止する場合は、多数個の電子部品領域を一括して封止することはできるものの、例えば、半導体を材料とした封止用の基板の場合であれば、基板の内部に3次元的に配線導体を形成することができないため、封止用の(第2の)半導体基板の、電子部品領域が配列形成された(第1の)半導体基板に接合される主面から対向する他方主面にかけて配線導体を導出することができず、電子部品の電極は、第1の半導体基板の主面に形成された電極の一部を封止部の外側に延出させるとともに、この延出部をボンディングワイヤを介して電子部品収納用パッケージの電極パッドや外部の電気回路に接続する必要があり、実装工程(電子部品領域の封止から電子装置として完成させて外部電気回路に接続するまでの工程)が長く、また、個々の電子装置のサイズが大きくなってしまうという問題が残る。また、電子装置を組み込んだ電子システムの小型化に有利な、表面実装ができないという問題もある。   However, when the electronic component region on the main surface of the semiconductor substrate is sealed using such a conventional sealing substrate, a large number of electronic component regions can be collectively sealed, for example, In the case of a sealing substrate made of a semiconductor material, wiring conductors cannot be three-dimensionally formed inside the substrate, so the electronic component region of the sealing (second) semiconductor substrate The wiring conductor cannot be led out from the main surface bonded to the (first) semiconductor substrate on which the first electrode is arranged to the other main surface opposite to the main surface, and the electrode of the electronic component is connected to the main surface of the first semiconductor substrate. It is necessary to extend a part of the formed electrode to the outside of the sealing part, and to connect this extended part to the electrode pad of the electronic component storage package or an external electric circuit via a bonding wire. Process (from sealing of electronic component area Complete as a child device long step) until the connection to an external electric circuit, also a problem that there remains the size of individual electronic devices increases. There is also a problem that surface mounting is not possible, which is advantageous for downsizing an electronic system incorporating an electronic device.

また、導電性の金属板等から成る封止用の基板の場合であれば、金属板に電極パッド等の導体パターンを形成することができるように、一旦ガラスやセラミックスで金属板の表面に形成した溝等を埋めて絶縁部を形成したり、その絶縁部の表面に、実装工程の途中で導体部を形成したりする必要があるため、この場合も、電子部品の実装工程を短くすることが困難であるという問題がある。   In the case of a sealing substrate made of a conductive metal plate, etc., once formed on the surface of the metal plate with glass or ceramics so that a conductor pattern such as an electrode pad can be formed on the metal plate. In this case, too, it is necessary to shorten the mounting process of the electronic component because it is necessary to form an insulating part by filling the groove or the like, or to form a conductor part on the surface of the insulating part during the mounting process. There is a problem that is difficult.

さらに、微小電子機械機構(MEMS)を形成した電子部品においては、近年、微小電子機械機構の応答精度の上昇、長時間駆動などが行なわれることから、微小電子機械機構の低消費電力化、電力応答性の向上が求められてきている。また、また、MEMS領域で消費される電力が供給不足になり、微小電子機械機構が正常に駆動しないため、微小電子機械機構の応答時間の増加による駆動応答性能の減少や、電気特性の変化、微小電子機械機構領域の破壊などが起こるものとなっている問題点があり、さらにこの問題点を解決するために、大容量のチップコンデンサを微小電子機械機構の近傍に実装する手法が取られており、実装面積が大きくなるという問題点もあった。   Furthermore, in the electronic parts formed with the micro electro mechanical mechanism (MEMS), in recent years, the response accuracy of the micro electro mechanical mechanism is increased and the driving is performed for a long time. There is a demand for improved responsiveness. In addition, since the power consumed in the MEMS region is insufficiently supplied and the microelectromechanical mechanism is not driven normally, a decrease in drive response performance due to an increase in response time of the microelectromechanical mechanism, a change in electrical characteristics, In order to solve this problem, there has been a method of mounting a large-capacity chip capacitor in the vicinity of the microelectromechanical mechanism. There is also a problem that the mounting area becomes large.

また、MEMS外部から配線導体を伝わり外部より伝播してきた高周波ノイズにより電気特性の変化やMEMS領域の破壊などが起こる。また、配線導体を伝播する信号に含まれる高調波ノイズが電子部品の外部に放出されやすいものとなってきていることから、電子部品の外部の近傍位置にノイズ発生源があると絶縁基板に被着形成された配線導体を伝播する信号に電磁波ノイズが入り込み、微小電子機械機構に伝播されて誤動作させてしまったり、あるいは電子部品の外部の近傍位置に電磁波ノイズに対して影響を受け易い電子機器があると電子部品より放出された電磁波ノイズがこの電子機器に悪影響を及ぼしてしまったりするという問題点があった。また、この問題を解決するために、チップインダクタをMEMSの近傍に実装したり、プリント板に導体パターンを用いて作製するなどの手法が取られており、その結果実装面積が大きくなるという問題点があった。   In addition, a change in electrical characteristics, destruction of the MEMS region, and the like occur due to high-frequency noise transmitted from the outside of the MEMS through the wiring conductor and transmitted from the outside. In addition, since harmonic noise contained in the signal propagating through the wiring conductor has become easy to be emitted outside the electronic component, if there is a noise source near the outside of the electronic component, the insulating substrate is covered. Electronic devices that are susceptible to electromagnetic noise in the vicinity of the outside of the electronic component, due to electromagnetic noise entering into the signal propagating through the formed wiring conductor and propagating to the micro-electromechanical mechanism. If there is, there is a problem that electromagnetic noise emitted from the electronic component may adversely affect the electronic device. In addition, in order to solve this problem, techniques such as mounting a chip inductor in the vicinity of the MEMS or using a conductive pattern on a printed board are taken, resulting in an increase in mounting area. was there.

本発明は上記従来の技術における諸問題に鑑みて完成されたものであり、その目的は、半導体基板の主面に形成された微小電子機械機構を容易かつ確実に封止することができるとともに、この微小電子機械機構と接続された半導体基板の主面に形成されている電極を容易かつ確実に、例えば表面実装が可能な形態で、外部接続させることができるものとすることにある。   The present invention has been completed in view of the above-described problems in the prior art, and its purpose is to easily and reliably seal the microelectromechanical mechanism formed on the main surface of the semiconductor substrate, An electrode formed on the main surface of the semiconductor substrate connected to the microelectromechanical mechanism can be easily externally connected in a form capable of surface mounting, for example.

また、MEMS領域で消費される電力が供給不足になり、微小電子機械機構が正常に駆動しないため、駆動応答性能の劣化や電気特性の変化や微小電子機械機構領域の破壊などが起こりにくく、MEMS外部から配線導体を伝わり外部より伝播してきた高周波ノイズによる電気特性の変化やMEMSの破壊などが起こりにくい小型化が可能な電子部品封止用基板を提供することにある。   In addition, since the power consumed in the MEMS region becomes insufficient and the micro-electromechanical mechanism does not drive normally, deterioration of drive response performance, change in electrical characteristics, and destruction of the micro-electromechanical mechanism region are unlikely to occur. It is an object of the present invention to provide an electronic component sealing substrate that can be miniaturized and hardly changes in electrical characteristics due to high-frequency noise that has propagated from the outside through a wiring conductor and is not easily damaged.

さらに、このような微小電子機械機構および電極から成る電子部品領域が半導体基板の主面に多数個縦横に配列形成されていたとしても、これらを容易かつ確実に封止することが可能な多数個取り用電子部品封止用基板を提供することにある。   Furthermore, even if a large number of electronic component regions composed of such micro-electromechanical mechanisms and electrodes are arranged vertically and horizontally on the main surface of the semiconductor substrate, they can be sealed easily and reliably. An object of the present invention is to provide an electronic component sealing substrate.

また、このような多数個取り用電子部品封止用基板を用いて、微小電子機械機構が封止されて成る多数個の電子装置を、例えば表面実装が可能な形態で一括して形成することが可能な、電子装置の製造方法を提供することにある。   Moreover, using such a multi-piece electronic component sealing substrate, a large number of electronic devices formed by sealing micro-electromechanical mechanisms are collectively formed in a form that can be surface-mounted, for example. It is an object of the present invention to provide a method for manufacturing an electronic device.

本発明の電子部品封止用基板は、一方主面から他方主面または側面に導出された配線導体が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記絶縁基板の前記一方主面に、前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記絶縁基板の前記他方主面に形成された、電子素子を収容するための凹部と、該凹部の内側に形成され、前記配線導体と電気的に接続された電子素子接続用パッドとを具備しており、半導体基板の主面に微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品の前記電極を前記接続端子に接合し、前記半導体基板の前記主面を前記枠部材の主面に接合することによって、前記枠部材の内側に前記電子部品の前記微小電子機械機構が気密封止されることを特徴とするものである。   The electronic component sealing substrate of the present invention includes an insulating substrate on which a wiring conductor led out from one main surface to the other main surface or side surface is formed, and the wiring conductor formed on the one main surface of the insulating substrate A connection pad electrically connected to the frame, a frame member joined to the one main surface of the insulating substrate so as to surround the connection pad, and the same as the frame member formed on the connection pad A connection terminal having a height, a recess formed on the other main surface of the insulating substrate for accommodating an electronic element, and an electronic element formed inside the recess and electrically connected to the wiring conductor A connection pad, and the electrode of an electronic component formed by forming a microelectromechanical mechanism and an electrode electrically connected to the main surface of a semiconductor substrate to the connection terminal; The main surface of the substrate is By bonding to the surface, the micro electronic mechanical system of the electronic component on the inside of the frame member is characterized in that the hermetically sealed.

また本発明の電子部品封止用基板は、上記構成において好ましくは、前記凹部は、平面視で前記接続パッドよりも内側に形成されていることを特徴とするものである。   In the electronic component sealing substrate of the present invention, preferably, the concave portion is formed inside the connection pad in a plan view.

また本発明の電子部品封止用基板は、上記構成において好ましくは、前記凹部に収納される前記電子素子がデカップリングコンデンサもしくはチョークコイルであることを特徴とするものである。   In the electronic component sealing substrate according to the present invention, preferably, the electronic element housed in the recess is a decoupling capacitor or a choke coil in the above configuration.

また本発明の電子部品封止用基板は、上記構成において好ましくは、前記絶縁基板の前記一方主面に、前記凹部と平面視で重なるようにして他の凹部が形成されていることを特徴とするものである。   In the electronic component sealing substrate according to the present invention, preferably, another concave portion is formed on the one main surface of the insulating substrate so as to overlap the concave portion in plan view. To do.

また、本発明の多数個取り用電子部品封止用基板は、絶縁母基板の一方主面に多数個縦横に配列形成された、前記一方主面から他方主面または側面に導出された複数の配線導体が形成された絶縁基板領域と、該各絶縁基板領域の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記各絶縁基板領域の前記一方主面に前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記絶縁基板の前記他方主面に形成された電子素子を収容するための凹部と、該凹部の内側に形成され、前記配線導体と電気的に接続された電子素子接続用パッドとを具備しており、半導体基板の主面に微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品の前記電極を前記接続端子に接合し、前記半導体基板の前記主面を前記枠部材の主面に接合することによって、前記各絶縁基板領域の前記枠部材の内側に前記電子部品の前記微小電子機械機構をそれぞれ気密封止することを特徴とするものである。   In addition, the multi-component electronic component sealing substrate of the present invention includes a plurality of vertical and horizontal arrays formed on one main surface of the insulating mother substrate, and a plurality of lead-out electronic components sealing substrates derived from the one main surface to the other main surface or side surfaces. Insulating substrate region in which wiring conductors are formed, connection pads electrically connected to the wiring conductors formed on the one main surface of each insulating substrate region, and the one main surface of each insulating substrate region A frame member joined so as to surround the connection pad, a connection terminal formed on the connection pad and having the same height as the frame member, and an electron formed on the other main surface of the insulating substrate. A recess for accommodating an element, and an electronic element connection pad formed inside the recess and electrically connected to the wiring conductor; and a microelectromechanical mechanism on the main surface of the semiconductor substrate; An electrode electrically connected to this is formed The electrode of the electronic component is bonded to the connection terminal, and the main surface of the semiconductor substrate is bonded to the main surface of the frame member, so that the electrons are placed inside the frame member in each insulating substrate region. The micro electromechanical mechanism of the component is hermetically sealed.

また本発明の電子装置の製造方法は、半導体基板の主面に、微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品領域を多数個縦横に配列形成した多数個取り電子部品を準備する工程と、絶縁母基板の一方主面に多数個縦横に配列形成された、前記一方主面から他方主面または側面に導出された複数の配線導体が形成された絶縁基板領域と、該各絶縁基板領域の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記各絶縁基板領域の前記一方主面に前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記絶縁基板の前記他方主面に形成された電子素子を収容するための凹部と、該凹部の内側に形成され、前記配線導体と電気的に接続された電子素子接続用パッドとを具備する多数個取り用電子部品封止用基板を準備する工程と、前記多数個取り電子部品の前記各電極を前記各接続端子に接合するとともに、前記各微小電子機械機構の周囲の前記半導体基板の前記主面を前記各枠部材の主面に接合して、前記各微小電子機械機構を前記各枠部材の内側にそれぞれ気密封止する工程と、互いに接合された前記多数個取り電子部品および前記多数個取り用電子部品封止用基板を、前記電子部品領域および絶縁基板領域毎に分割して個々の電子装置を得る工程とを具備することを特徴とするものである。   The electronic device manufacturing method according to the present invention also includes a plurality of electronic component regions formed by arranging a plurality of electronic component regions formed vertically and horizontally on a main surface of a semiconductor substrate, on which microelectromechanical mechanisms and electrodes electrically connected thereto are formed. Insulating substrate on which a plurality of wiring conductors led out from the one main surface to the other main surface or side surfaces are formed and arranged in a plurality of vertical and horizontal directions on one main surface of the insulating mother substrate A region, a connection pad formed on the one main surface of each insulating substrate region and electrically connected to the wiring conductor, and surrounding the connection pad on the one main surface of each insulating substrate region. A frame member joined together, a connection terminal formed on the connection pad and having the same height as the frame member, and a recess for accommodating an electronic element formed on the other main surface of the insulating substrate Formed inside the recess Preparing a multi-piece electronic component sealing substrate comprising an electronic element connection pad electrically connected to the wiring conductor; and connecting each electrode of the multi-piece electronic component to each connection terminal And bonding the main surface of the semiconductor substrate around each micro electro mechanical mechanism to the main surface of each frame member so that each micro electro mechanical mechanism is placed inside each frame member. A step of hermetically sealing, and a step of obtaining individual electronic devices by dividing the multi-piece electronic component and the multi-piece electronic component sealing substrate bonded to each other into the electronic component region and the insulating substrate region It is characterized by comprising.

本発明の電子部品封止用基板によれば、一方主面から他方主面または側面に導出された配線導体が形成された絶縁基板と、絶縁基板の一方主面に形成された、配線導体と電気的に接続された接続パッドと、絶縁基板の一方主面に、接続パッドを取り囲むようにして接合された枠部材と、接続パッド上に形成された、枠部材と同じ高さの接続端子と、絶縁基板の他方主面に形成された電子素子を収容するための凹部と、凹部の内側に形成され、配線導体と電気的に接続された電子素子接続用パッドとを具備しており、半導体基板の主面に微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品の電極を接続端子に接合し、半導体基板の主面を枠部材の主面に接合させることによって、枠部材の内側に電子部品の微小電子機械機構を気密封止するようにしたことから、枠部材の主面を半導体基板の主面に接合させるだけで、電子部品の微小電子機械機構を枠部材と絶縁基板とにより容易かつ確実に封止することができる。   According to the electronic component sealing substrate of the present invention, an insulating substrate on which a wiring conductor led out from one main surface to the other main surface or a side surface is formed, and a wiring conductor formed on one main surface of the insulating substrate; A connection pad electrically connected; a frame member joined to one main surface of the insulating substrate so as to surround the connection pad; and a connection terminal formed on the connection pad and having the same height as the frame member; A recess for accommodating an electronic element formed on the other main surface of the insulating substrate, and an electronic element connection pad formed inside the recess and electrically connected to the wiring conductor. Bonding an electrode of an electronic component formed by forming a microelectromechanical mechanism and an electrode electrically connected to the main surface of the substrate to the connection terminal, and bonding the main surface of the semiconductor substrate to the main surface of the frame member By using the Since the mechanical mechanism is hermetically sealed, the microelectromechanical mechanism of the electronic component can be easily and reliably sealed between the frame member and the insulating substrate simply by joining the main surface of the frame member to the main surface of the semiconductor substrate. Can be stopped.

また、枠部材の主面の高さが、接続パッド上に形成された接続端子の高さと同じであるので、枠部材の主面を半導体基板の主面に接合するときに、半導体基板の主面に形成されている電極を接続端子に容易かつ確実に接続することができる。また、この接続端子から接続パッドおよび配線導体を介して、電子部品の電極を外部に導出することもできる。   In addition, since the height of the main surface of the frame member is the same as the height of the connection terminal formed on the connection pad, when the main surface of the frame member is joined to the main surface of the semiconductor substrate, the main surface of the semiconductor substrate. The electrode formed on the surface can be easily and reliably connected to the connection terminal. Moreover, the electrode of an electronic component can also be derived | led-out outside from this connection terminal via a connection pad and a wiring conductor.

また、絶縁基板の他方主面に電子素子を収容するための凹部があるため、凹部に電子素子、例えばチップコンデンサやチップインダクタなどのチップ部品を実装することにより、消費電力が不足することによる駆動応答性能の劣化や、電気特性の変化や微小電子機械機構領域の破壊などが起こりにくく、消費電力が不足することによる駆動応答性能の劣化や、電気特性の変化や微小電子機械機構領域の破壊などが起こりにくく、MEMS外部から配線導体を伝わり外部より伝播してきた高周波ノイズによる電気特性の変化やMEMSの破壊などが起こりにくい。   In addition, since there is a recess for accommodating an electronic element on the other main surface of the insulating substrate, driving due to insufficient power consumption by mounting an electronic element, for example, a chip component such as a chip capacitor or a chip inductor in the recess. Deterioration of response performance, changes in electrical characteristics and destruction of micro-electromechanical mechanisms are unlikely to occur, deterioration of drive response performance due to insufficient power consumption, changes in electrical characteristics, destruction of micro-electromechanical mechanisms, etc. This is unlikely to occur, and changes in electrical characteristics due to high-frequency noise transmitted from the outside of the MEMS through the wiring conductor and from the outside, and destruction of the MEMS are unlikely to occur.

また、電子素子は、絶縁基板の他方主面側に収容、実装されるので、MEMSの近傍に電子素子を実装するスペースを確保する必要はなく、実装面積を小さく抑え、小型の電子部品封止用基板を提供することができる。   In addition, since the electronic device is housed and mounted on the other main surface side of the insulating substrate, it is not necessary to secure a space for mounting the electronic device in the vicinity of the MEMS. A substrate can be provided.

本発明において好ましくは、凹部は、平面視で接続パッドよりも内側に形成されているため、接続パットに実装された電子素子が外部から来るノイズなどにより強くなる。すなわち、この場合、電子部品封止用基板の小型化がより一層容易なものとなるとともに、MEMSと、MEMSに対する電力供給の安定化や外部ノイズの遮断等の機能を有する電子素子との間の距離が近くなるので接続パットに接続されたMEMSが外部から伝播して来るノイズなどにより強くなる。   Preferably, in the present invention, the concave portion is formed on the inner side of the connection pad in a plan view, so that the electronic element mounted on the connection pad becomes stronger due to noise coming from the outside. That is, in this case, the electronic component sealing substrate can be further reduced in size, and between the MEMS and an electronic element having functions such as stabilization of power supply to the MEMS and blocking of external noise. As the distance becomes shorter, the MEMS connected to the connection pad becomes stronger due to noise propagating from the outside.

また本発明において好ましくは、凹部に収納される電子素子がデカップリングコンデンサもしくはチョークコイルであるため、MEMSの周囲に実装していたデカップリングコンデンサもしくはチョークコイルの実装面積を小さくすることができ、よりMEMSの保護の観点からは信頼性が向上することとなる。   In the present invention, preferably, since the electronic element housed in the recess is a decoupling capacitor or a choke coil, the mounting area of the decoupling capacitor or choke coil mounted around the MEMS can be reduced, and more From the viewpoint of protecting the MEMS, the reliability is improved.

また本発明において好ましくは、絶縁基板の一方主面に、凹部と平面視で重なるようにして他の凹部が形成されているため、絶縁体基板が作製中に反ることが少なくなりMEMSと絶縁基板間の1次実装面の信頼性がより増すことなる。すなわち、この場合、例えば、絶縁体基板を未焼結セラミック材料を焼成することにより形成したり、未硬化の有機樹脂を熱硬化させることにより形成したりするときに、焼成や硬化にともなう収縮が一方主面側と他方主面側とで同じような挙動となり、収縮にともなう応力を効果的に相殺させることができるため絶縁基板が作製中に反ることが少なくなりMEMSと絶縁基板間の1次実装面の信頼性がより増すことなる。   In the present invention, preferably, the other main surface of the insulating substrate is formed with another concave portion so as to overlap with the concave portion in plan view, so that the insulating substrate is less likely to be warped during manufacture and insulated from the MEMS. The reliability of the primary mounting surface between the substrates is further increased. That is, in this case, for example, when the insulating substrate is formed by firing an unsintered ceramic material or formed by thermally curing an uncured organic resin, shrinkage due to firing or curing occurs. On the other hand, the main surface side and the other main surface side behave in the same manner, and stress due to shrinkage can be effectively canceled out, so that the insulating substrate is less likely to warp during fabrication, and 1 between the MEMS and the insulating substrate. The reliability of the next mounting surface will be further increased.

また、本発明の電子部品封止用基板は、例えば、セラミック多層配線基板等の絶縁基板を用いて形成したものとすることにより、配線導体を、接続パッドや枠部材が形成、接合されている一方主面から他方主面や側面にかけて、基板の内部や表面に自由に形成して導出させることができ、この導出された端部に外部接続用の金属バンプを取着させること等により、容易に表面実装することが可能な電子装置として完成させることができる。   In addition, the electronic component sealing substrate of the present invention is formed by using an insulating substrate such as a ceramic multilayer wiring substrate, for example, so that the connection pads and the frame members are formed and bonded to the wiring conductor. From one main surface to the other main surface or side surface, it can be freely formed on the inside or surface of the substrate and led out, and by attaching metal bumps for external connection to this derived end, etc. It can be completed as an electronic device that can be surface-mounted.

本発明の多数個取り用電子部品封止用基板によれば、絶縁母基板の一方主面に多数個縦横に配列形成された、一方主面から他方主面または側面に導出された複数の配線導体が形成された絶縁基板領域と、各絶縁基板領域の一方主面に形成された、配線導体と電気的に接続された接続パッドと、各絶縁基板領域の一方主面に接続パッドを取り囲むようにして接合された枠部材と、接続パッド上に形成された、枠部材と同じ高さの接続端子と、絶縁基板の他方主面に形成された電子素子を収容するための凹部と、凹部の内側に形成され、配線導体と電気的に接続された電子素子接続用パッドとを具備し、半導体基板の主面に微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品の電極を接続端子に接合し、半導体基板の主面を枠部材の主面に接合することによって、各絶縁基板領域の枠部材の内側に電子部品の微小電子機械機構をそれぞれ気密封止することから、半導体基板の主面に多数の電子部品領域が縦横に配列形成された多数個取り電子部品について各電子部品領域を一括して外部接続が可能なようにして封止することができる。   According to the multi-component electronic component sealing substrate of the present invention, a plurality of wirings arranged in the vertical direction and the horizontal direction on one main surface of the insulating mother substrate and led out from one main surface to the other main surface or side surface. Insulating substrate region in which conductor is formed, connection pad formed on one main surface of each insulating substrate region and electrically connected to wiring conductor, and surrounding the connection pad on one main surface of each insulating substrate region The joined frame member, the connection terminal formed on the connection pad and having the same height as the frame member, the concave portion for accommodating the electronic element formed on the other main surface of the insulating substrate, and the concave portion An electronic device comprising an electronic element connecting pad formed inside and electrically connected to a wiring conductor, and having a microelectromechanical mechanism and an electrode electrically connected thereto formed on a main surface of a semiconductor substrate Joining the component electrodes to the connection terminals, the semiconductor substrate By joining the main surface to the main surface of the frame member, the micro electro mechanical mechanism of the electronic component is hermetically sealed inside the frame member of each insulating substrate region, so that a large number of electronic components are formed on the main surface of the semiconductor substrate. With respect to a multi-piece electronic component in which the regions are arranged vertically and horizontally, each electronic component region can be sealed together so that external connection is possible.

本発明の電子装置の製造方法によれば、上記各工程を具備することから、縦横に配列形成された多数個の電子部品領域について、それぞれの電極の外部接続のための接続と微小電子機械機構の封止とを同時に行なうことができるため、互いに接合された多数個取り電子部品および多数個取り用電子部品封止用基板から成る多数個取りの電子装置を、容易かつ確実に製造することができる。   According to the method for manufacturing an electronic device of the present invention, since each of the above steps is provided, connection for external connection of each electrode and a microelectromechanical mechanism for a large number of electronic component regions arranged in rows and columns. Can be simultaneously performed, so that it is possible to easily and reliably manufacture a multi-cavity electronic device comprising a multi-cavity electronic component and a multi-cavity electronic component sealing substrate that are joined together. it can.

また、互いに接合された多数個取り電子部品および多数個取り用電子部品封止用基板を、電子部品領域および絶縁基板領域毎に分割することにより、電子部品封止用基板で電子部品を封止して成る個々の電子装置を多数個同時に製造することができる。この分割の際、電子部品領域の各微小電子機械機構は多数個取り用電子部品封止用基板によりそれぞれ封止されているので、ダイシング加工等による分割で発生するシリコン等の半導体基板の切削粉が微小電子機械機構に付着するようなことはなく、分割後の電子装置において微小電子機械機構を確実に作動させることができる。   In addition, the electronic components are sealed with the electronic component sealing substrate by dividing the multi-component electronic component and the multi-component electronic component sealing substrate joined to each other into the electronic component region and the insulating substrate region. A large number of individual electronic devices can be manufactured at the same time. At the time of this division, each micro-electromechanical mechanism in the electronic component area is sealed by a multi-component electronic component sealing substrate, so that the cutting powder of the semiconductor substrate such as silicon generated by the dicing process etc. Does not adhere to the microelectromechanical mechanism, and the microelectromechanical mechanism can be reliably operated in the divided electronic device.

また、分割して得られた電子装置は、絶縁基板の他方主面や側面に配線導体が導出されているので、この導出された端部に金属バンプ等の端子を取着するだけで、表面実装等により外部伝記回路基板に実装することができるものとなり、実装の工程を非常に短く、かつ容易なものとすることができる電子装置となる。   Moreover, since the wiring conductor is led out to the other main surface or side surface of the insulating substrate, the electronic device obtained by dividing the surface can be obtained by simply attaching a terminal such as a metal bump to the lead end. The electronic device can be mounted on an external biographic circuit board by mounting or the like, and the mounting process can be made extremely short and easy.

本発明の電子部品封止用基板および多数個取り用電子部品封止用基板ならびに電子装置の製造方法について以下に詳細に説明する。   The electronic component sealing substrate, the multi-component electronic component sealing substrate of the present invention, and the method of manufacturing the electronic device will be described in detail below.

図1は本発明の電子部品封止用基板の実施の形態の一例を示す断面図である。   FIG. 1 is a sectional view showing an example of an embodiment of an electronic component sealing substrate of the present invention.

図1において、1は絶縁基板、2は配線導体、3は接続パッド、4は枠部材、5は接続端子である。これら絶縁基板1、配線導体2、接続パッド3、枠部材4および接続端子5により電子部品封止用基板6が形成される。   In FIG. 1, 1 is an insulating substrate, 2 is a wiring conductor, 3 is a connection pad, 4 is a frame member, and 5 is a connection terminal. These insulating substrate 1, wiring conductor 2, connection pad 3, frame member 4 and connection terminal 5 form an electronic component sealing substrate 6.

この電子部品封止用基板6を用いて、半導体基板7の主面(この図1の例では下面)に、微小電子機械機構8と電極9とを互いに電気的に接続するようにして形成して成る電子部品10を封止することにより、微小電子機械機構8が外部接続可能な状態で封止されてなる電子装置が形成される。   Using this electronic component sealing substrate 6, a micro electro mechanical mechanism 8 and an electrode 9 are electrically connected to each other on the main surface of the semiconductor substrate 7 (the lower surface in the example of FIG. 1). By sealing the electronic component 10 formed as described above, an electronic device is formed in which the micro-electromechanical mechanism 8 is sealed in a state where it can be externally connected.

本発明における微小電子機械機構8は、例えば電気スイッチ、インダクタ、キャパシタ、共振器、アンテナ、マイクロリレー、光スイッチ、ハードディスク用磁気ヘッド、マイク、バイオセンサー、DNAチップ、マイクロリアクタ、プリントヘッド、加速度センサ、圧力センサなどの各種センサ、ディスプレイデバイスなどの機能を有する電子装置であり、半導体微細加工技術を基本とした、いわゆるマイクロマシニングで作る部品であり、1素子あたり10μm〜数100μm程度の寸法を有する。   The micro electro mechanical mechanism 8 in the present invention includes, for example, an electric switch, an inductor, a capacitor, a resonator, an antenna, a micro relay, an optical switch, a magnetic head for a hard disk, a microphone, a biosensor, a DNA chip, a microreactor, a print head, an acceleration sensor, It is an electronic device having functions such as various sensors such as pressure sensors and display devices, and is a part made by so-called micromachining based on semiconductor micromachining technology, and has a size of about 10 μm to several 100 μm per element.

絶縁基板1は、微小電子機械機構8を封止するための蓋体として機能するとともに、配線導体2、接続パッド3、枠部材4および接続端子5を形成するための基体として機能する。   The insulating substrate 1 functions as a lid for sealing the microelectromechanical mechanism 8 and also functions as a base for forming the wiring conductor 2, the connection pad 3, the frame member 4, and the connection terminal 5.

この絶縁基板1は、酸化アルミニウム質焼結体や窒化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化珪素質焼結体、ガラスセラミックス焼結体等のセラミックス材料や、ポリイミド、ガラスエポキシ樹脂等の有機樹脂材料、セラミックスやガラス等の無機粉末をエポキシ樹脂等の有機樹脂で結合して成る複合材等により形成される。   The insulating substrate 1 includes ceramic materials such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, and a glass ceramic sintered body. It is formed of an organic resin material such as polyimide or glass epoxy resin, or a composite material formed by bonding inorganic powder such as ceramics or glass with an organic resin such as epoxy resin.

絶縁基板1は、例えば、酸化アルミニウム質焼結体から成る場合であれば、酸化アルミニウムとガラス粉末等の原料粉末をシート上に成形して成るグリーンシートを積層し、焼成することにより形成される。なお、絶縁基板1は、酸化アルミニウム質焼結体で形成するものに限らず、用途や気密封止する電子部品10の特性等に応じて適したものを選択することが好ましい。   If the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, the insulating substrate 1 is formed by laminating and baking a green sheet formed by forming aluminum oxide and a raw material powder such as glass powder on the sheet. . The insulating substrate 1 is not limited to the one formed of an aluminum oxide sintered body, and it is preferable to select a substrate that is suitable for the application and the characteristics of the electronic component 10 to be hermetically sealed.

例えば、絶縁基板1は、後述するように、枠部材4を介して半導体基板7と機械的に接合されるので、半導体基板7との接合の信頼性、つまり微小電子機械機構8の封止の気密性を高くするためには、ムライト質焼結体や、例えばガラス成分の種類や添加量を調整することにより熱膨張係数を半導体基板7に近似させるようにした酸化アルミニウム−ホウ珪酸ガラス系等のガラスセラミックス焼結体等のような半導体基板7との熱膨張係数の差が小さい材料で形成することが好ましい。   For example, since the insulating substrate 1 is mechanically bonded to the semiconductor substrate 7 via the frame member 4 as will be described later, the reliability of bonding with the semiconductor substrate 7, that is, the sealing of the micro electro mechanical mechanism 8 is achieved. In order to increase the airtightness, a mullite sintered body, an aluminum oxide-borosilicate glass system in which the thermal expansion coefficient is approximated to the semiconductor substrate 7 by adjusting, for example, the kind and addition amount of the glass component, etc. It is preferable to form a material having a small difference in thermal expansion coefficient from the semiconductor substrate 7 such as a glass ceramic sintered body.

また、絶縁基板1は、配線導体2により伝送される電気信号の遅延を防止するような場合には、ポリイミド、ガラスエポキシ樹脂等の有機樹脂材料、セラミックスやガラス等の無機粉末をエポキシ樹脂等の有機樹脂で結合して成る複合材、または、酸化アルミニウム−ホウ珪酸ガラス系や酸化リチウム系等のガラスセラミックス焼結体等のような比誘電率の小さい材料で形成することが好ましい。   Further, in the case of preventing the delay of the electrical signal transmitted by the wiring conductor 2, the insulating substrate 1 is made of an organic resin material such as polyimide or glass epoxy resin, or an inorganic powder such as ceramic or glass such as epoxy resin. It is preferably formed of a composite material formed by bonding with an organic resin, or a material having a low relative dielectric constant such as a sintered glass ceramic such as aluminum oxide-borosilicate glass or lithium oxide.

また、絶縁基板1は、封止する微小電子機械機構8の発熱量が大きく、この熱の外部への放散性を良好とするような場合には、窒化アルミニウム質焼結体等のような熱伝導率の大きな材料で形成することが好ましい。   Further, the insulating substrate 1 has a large calorific value of the microelectromechanical mechanism 8 to be sealed, and in the case where the heat dissipating property is good, a heat such as an aluminum nitride sintered body is used. It is preferable to form with a material having high conductivity.

絶縁基板1の一方主面(微小電子機械機構8を封止する側)からは、他方主面または側面に配線導体2が導出されている。   From one main surface of the insulating substrate 1 (the side on which the micro electro mechanical mechanism 8 is sealed), the wiring conductor 2 is led out to the other main surface or side surface.

また、この絶縁基板1の一方主面側の枠部材4の内側の部位には、配線導体2と接続された接続パッド3が形成されている。   In addition, a connection pad 3 connected to the wiring conductor 2 is formed in a portion inside the frame member 4 on the one main surface side of the insulating substrate 1.

これらの配線導体2および接続パッド3は、接続パッド3上に形成される接続端子5を介して電子部品10の電極9と電気的に接続され、これを絶縁基板1の他方主面や側面に導出する機能を有する。   The wiring conductor 2 and the connection pad 3 are electrically connected to the electrode 9 of the electronic component 10 through the connection terminal 5 formed on the connection pad 3, and this is connected to the other main surface or side surface of the insulating substrate 1. It has a function to derive.

これらの配線導体2および接続パッド3は、銅、銀、金、パラジウム、タングステン、モリブデン、マンガン等の金属材料により形成される。この形成の手段としては、メタライズ層、めっき層、蒸着等の金属を薄膜層として被着させる手段を用いることができる。例えば、タングステンのメタライズ層から成る場合であれば、タングステンのペーストを絶縁基板1となるグリーンシートに印刷してこれをグリーンシートとともに焼成することにより形成される。   These wiring conductors 2 and connection pads 3 are formed of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, and manganese. As a means for the formation, a means for depositing a metal such as a metallized layer, a plating layer, or vapor deposition as a thin film layer can be used. For example, in the case of a tungsten metallized layer, it is formed by printing a tungsten paste on a green sheet to be the insulating substrate 1 and firing it together with the green sheet.

接続端子5は、錫−銀系、錫−銀−銅系等の半田、金−錫ろう等の低融点ろう材、銀−ゲルマニウム系等の高融点ろう材、導電性有機樹脂、あるいはシーム溶接、電子ビーム溶接等の溶接法による接合を可能とするような金属材料等により形成されている。   The connection terminal 5 is composed of solder such as tin-silver, tin-silver-copper, low melting point solder such as gold-tin, high melting point solder such as silver-germanium, conductive organic resin, or seam welding. Further, it is formed of a metal material or the like that enables joining by a welding method such as electron beam welding.

この接続端子5を電子部品10の電極9に接合することにより、電子部品10の電極9が、接続端子5、接続パッド3および配線導体2を介して、絶縁基板1の他方主面または側面に導出される。そして、この導出された端部を外部の電気回路に錫−鉛半田等を介して接合することにより、電子部品10の電極9が外部の電気回路と電気的に接続される。   By joining the connection terminal 5 to the electrode 9 of the electronic component 10, the electrode 9 of the electronic component 10 is connected to the other main surface or side surface of the insulating substrate 1 via the connection terminal 5, the connection pad 3 and the wiring conductor 2. Derived. And the electrode 9 of the electronic component 10 is electrically connected with an external electric circuit by joining this derived | led-out edge part to an external electric circuit via tin-lead solder etc. FIG.

また、絶縁基板1の一方主面には、接続パッド3を取り囲むようにして枠部材4が接合されている。   A frame member 4 is joined to one main surface of the insulating substrate 1 so as to surround the connection pad 3.

枠部材4は、電子部品10の微小電子機械機構8をその内側に気密封止するための側壁として機能する。   The frame member 4 functions as a side wall for hermetically sealing the microelectromechanical mechanism 8 of the electronic component 10 inside thereof.

この枠部材4の主面(図1の例では上面)を電子部品10の主面(図1の例では下面)に接合させることにより、枠部材4の内側に微小電子機械機構8が気密封止される。なお、この場合、半導体基板7が底板となり、絶縁基板1が蓋体となる。   By joining the main surface (upper surface in the example of FIG. 1) of the frame member 4 to the main surface (lower surface in the example of FIG. 1) of the electronic component 10, the micro electromechanical mechanism 8 is hermetically sealed inside the frame member 4. Stopped. In this case, the semiconductor substrate 7 serves as a bottom plate and the insulating substrate 1 serves as a lid.

枠部材4は、鉄−ニッケル−コバルト合金や鉄−ニッケル合金等の鉄−ニッケル系合金、無酸素銅、アルミニウム、ステンレス鋼、銅−タングステン合金、銅−モリブデン合金等の金属材料や、酸化アルミニウム質焼結体、ガラスセラミックス焼結体等の無機系材料、あるいはPTFE(ポリテトラフルオロエチレン)、ガラスエポキシ樹脂等の有機樹脂系材料等により形成される。   The frame member 4 is made of an iron-nickel alloy such as iron-nickel-cobalt alloy or iron-nickel alloy, a metal material such as oxygen-free copper, aluminum, stainless steel, copper-tungsten alloy, copper-molybdenum alloy, or aluminum oxide. It is formed of an inorganic material such as a quality sintered body or a glass ceramic sintered body, or an organic resin material such as PTFE (polytetrafluoroethylene) or glass epoxy resin.

また、枠部材4の主面を電子部品10の半導体基板7の主面に接合する方法としては、錫−銀系等の半田,金−錫ろう等の低融点ろう材,銀−ゲルマニウム系等の高融点ろう材,導電性有機樹脂等の接合材を介して接合する方法、あるいはシーム溶接、電子ビーム溶接等の溶接法を用いることができる。   Further, as a method of joining the main surface of the frame member 4 to the main surface of the semiconductor substrate 7 of the electronic component 10, solder such as tin-silver type, low melting point brazing material such as gold-tin brazing, silver-germanium type, etc. A bonding method such as a high melting point brazing material, a conductive organic resin or the like, or a welding method such as seam welding or electron beam welding can be used.

本発明の電子部品封止用基板6において、絶縁基板1の他方主面には凹部12が形成されている。凹部12は、内部にデカップリングコンデンサやチョークコイル、半導体集積回路素子、圧電振動子、チップ抵抗等の電子素子を収容するためのものである。   In the electronic component sealing substrate 6 of the present invention, a recess 12 is formed on the other main surface of the insulating substrate 1. The recess 12 is for accommodating electronic elements such as a decoupling capacitor, a choke coil, a semiconductor integrated circuit element, a piezoelectric vibrator, and a chip resistor.

凹部12の内側には、配線導体2と電気的に接続するようにして電子素子接続用パッド13が形成されており、凹部12内に収容した電子素子、例えばデカップリングコンデンサの電極が、半田等の接続材を介して電気的に接続される。   Inside the recess 12, an electronic element connection pad 13 is formed so as to be electrically connected to the wiring conductor 2, and an electronic element accommodated in the recess 12, for example, an electrode of a decoupling capacitor is connected to solder or the like. It is electrically connected through the connecting material.

この電子素子は、配線導体2を介して微小電子機械機構8と電気的に接続され、微小電子機械機構8の電気特性を確保したり、ノイズを遮断したりし、電気的、機械的な作動を確実なものとする。   This electronic element is electrically connected to the microelectromechanical mechanism 8 through the wiring conductor 2 to ensure the electrical characteristics of the microelectromechanical mechanism 8 and to block noise, and to operate electrically and mechanically. To ensure.

また、凹部12はセラミックグリーンシートを打ち抜き金型やNCパンチャーなどを用いて穴加工し絶縁基板1に積層され、絶縁基板1と同時焼成される。   The recess 12 is formed by punching a ceramic green sheet using a punching die or an NC puncher, and is laminated on the insulating substrate 1, and is fired simultaneously with the insulating substrate 1.

また、素子接続用パット13は配線導体2と同様に形成される。   The element connecting pad 13 is formed in the same manner as the wiring conductor 2.

そして、半導体基板7の主面に微小電子機械機構8およびこれに電気的に接続された電極9が形成されて成る電子部品10について、電極9を接続端子5に接合し、半導体基板7の主面を枠部材4の主面に接合させることによって、枠部材4の内側に電子部品10の微小電子機械機構8が気密封止され、凹部内に電子素子を収容することにより電子装置が形成される。   Then, for the electronic component 10 in which the microelectromechanical mechanism 8 and the electrode 9 electrically connected thereto are formed on the main surface of the semiconductor substrate 7, the electrode 9 is joined to the connection terminal 5. By bonding the surface to the main surface of the frame member 4, the micro-electromechanical mechanism 8 of the electronic component 10 is hermetically sealed inside the frame member 4, and an electronic device is formed by housing the electronic element in the recess. The

この電子装置のうち配線導体2の導出部分を、半田ボール等の外部端子11を介して外部の電気回路に接続することにより、微小電子機械機構8が外部電気回路と電気的に接続される。   By connecting the lead-out portion of the wiring conductor 2 of this electronic device to an external electric circuit via an external terminal 11 such as a solder ball, the microelectromechanical mechanism 8 is electrically connected to the external electric circuit.

なお、図1に示すように、枠部材4が接合される絶縁基板1の主面に、接続パッド3と同様の材料により導体層3aを形成しておき、この導体層3aから絶縁基板1の他方主面にかけて配線導体2の一部を導出させるようにしてもよい。この導体層3aから導出された配線導体2の導出部分は、上述の外部端子11等を介して外部電気回路の接地用端子等に接続することができる。   As shown in FIG. 1, a conductor layer 3a is formed of the same material as that of the connection pad 3 on the main surface of the insulating substrate 1 to which the frame member 4 is bonded, and the insulating substrate 1 is formed from the conductor layer 3a. A part of the wiring conductor 2 may be led out over the other main surface. The lead-out portion of the wiring conductor 2 led out from the conductor layer 3a can be connected to the grounding terminal of the external electric circuit or the like via the external terminal 11 or the like.

この場合、接続端子5と電極9との接合、および枠部材4の主面と半導体基板7の主面との接合を一つの工程で確実かつ容易に行なうことを可能とするために、接続端子5の高さと枠部材4の高さとは同じ高さとしておく必要がある。   In this case, in order to enable the bonding of the connection terminal 5 and the electrode 9 and the bonding of the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 to be performed reliably and easily in one step, the connection terminal The height of 5 and the height of the frame member 4 need to be the same height.

また、本発明の電子部品封止用基板6の凹部12は、平面視で接続パッド3よりも内側に形成されていることが好ましい。こうすることにより、電子部品10を2次実装する際に電子素子が外部の力学的な刺激より遮断されることとなり、凹部12内に実装された電子素子の保護をより確実に行うことができる。   Moreover, it is preferable that the recessed part 12 of the board | substrate 6 for electronic component sealing of this invention is formed inside the connection pad 3 by planar view. In this way, when the electronic component 10 is secondarily mounted, the electronic element is cut off from an external dynamic stimulus, and the electronic element mounted in the recess 12 can be more reliably protected. .

また、本発明の電子部品封止用基板6の凹部12部に収納される電子素子がデカップリングコンデンサもしくはチョークコイルであることであることが好ましい。こうすることによりMEMSの保護を行うための電子素子を微小電子機械機構8の近くに実装することができ、MEMSの信頼性をより強固なものとすることができる。   Moreover, it is preferable that the electronic element accommodated in the recessed part 12 of the electronic component sealing substrate 6 of the present invention is a decoupling capacitor or a choke coil. By doing so, an electronic element for protecting the MEMS can be mounted near the microelectromechanical mechanism 8, and the reliability of the MEMS can be further strengthened.

また、本発明の電子部品封止用基板6の絶縁基板1の一方主面に、凹部12と平面視で重なるようにして第2凹部が形成されていることが好ましい。こうすることにより、絶縁基板1のそりを抑えることができ、さらにMEMSの封止性を向上することができる。   In addition, it is preferable that a second recess is formed on one main surface of the insulating substrate 1 of the electronic component sealing substrate 6 of the present invention so as to overlap the recess 12 in plan view. By doing so, warpage of the insulating substrate 1 can be suppressed, and further, the sealing performance of the MEMS can be improved.

本発明の多数個取り用電子部品封止用基板は、図2に示すように、絶縁母基板の一方主面に多数個縦横に配列形成された、一方主面から他方主面または側面に導出された複数の配線導体2が形成された絶縁基板領域1aと、各絶縁基板領域1aの一方主面に形成された、配線導体2と電気的に接続された接続パッド3と、各絶縁基板領域1aの一方主面に接続パッド3を取り囲むようにして接合された枠部材4と、接続パッド3上に形成された、枠部材4と同じ高さの接続端子5と、各絶縁基板領域1aの他方主面に形成された電子素子を収容するための凹部12と、凹部12の内側に形成され、配線導体2と電気的に接続された電子素子接続用パッド13とを具備し、半導体基板7の主面に微小電子機械機構8およびこれに電気的に接続された電極9が形成されて成る電子部品10の電極9を接続端子5に接合し、半導体基板7の主面を枠部材4の主面に接合することによって、各絶縁基板領域1aの枠部材4の内側に電子部品10の微小電子機械機構8をそれぞれ気密封止するものである。なお、図2は、本発明の多数個取り用電子部品封止用基板の実施の形態の一例を示す断面図であり、図2において図1と同じ部位には同じ符号を付している。   As shown in FIG. 2, the multi-component electronic component sealing substrate of the present invention is led out from one main surface to the other main surface or side surface, in which a large number are vertically and horizontally arranged on one main surface of the insulating mother substrate. Insulated substrate region 1a in which a plurality of wiring conductors 2 are formed, connection pads 3 electrically connected to wiring conductor 2 formed on one main surface of each insulated substrate region 1a, and each insulated substrate region A frame member 4 joined so as to surround the connection pad 3 on one main surface of 1a, a connection terminal 5 formed on the connection pad 3 and having the same height as the frame member 4, and each insulating substrate region 1a The semiconductor substrate 7 includes a recess 12 for accommodating an electronic element formed on the other main surface, and an electronic element connection pad 13 formed inside the recess 12 and electrically connected to the wiring conductor 2. Is electrically connected to the microelectromechanical mechanism 8 and The electrode 9 of the electronic component 10 formed with the formed electrodes 9 is joined to the connection terminals 5, and the main surface of the semiconductor substrate 7 is joined to the main surface of the frame member 4, whereby the frame member 4 of each insulating substrate region 1a. The micro-electromechanical mechanism 8 of the electronic component 10 is hermetically sealed inside. FIG. 2 is a cross-sectional view showing an example of an embodiment of the multi-piece electronic component sealing substrate of the present invention. In FIG. 2, the same parts as those in FIG.

本発明の多数個取り用電子部品封止用基板6aによれば、上記の構成としたことから、半導体基板7の主面に、微小電子機械機構8およびこれに電気的に接続された電極9が多数個配列形成された、多数個取りの形態で製作される電子部品10を、多数個同時に気密封止することができ、生産性を優れたものとすることができる。   According to the multi-component electronic component sealing substrate 6a of the present invention, since it has the above-described configuration, the micro-electromechanical mechanism 8 and the electrode 9 electrically connected to the main surface of the semiconductor substrate 7 are provided. Can be hermetically sealed at the same time, and the productivity can be improved.

また、このように半導体基板7の主面に微小電子機械機構8およびこれに電気的に接続された電極9が多数個配列形成された、多数個取りの形態で製作される電子部品10を一括して封止しておくと、この半導体基板7(および多数個取り用電子部品封止用基板6)にダイシング加工等の切断加工を施して、個々の電子子部品10(電子装置)に分割する際に、切断に伴って発生する切削粉等が微小電子機械機構8に付着してその作動を妨害するという不具合の発生を効果的に防止することができる。   In addition, the electronic components 10 manufactured in a multi-cavity form in which a large number of microelectromechanical mechanisms 8 and a plurality of electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7 are collectively shown. After sealing, the semiconductor substrate 7 (and the multi-component electronic component sealing substrate 6) is subjected to cutting processing such as dicing and divided into individual electronic component parts 10 (electronic devices). In doing so, it is possible to effectively prevent the occurrence of a problem that cutting powder or the like generated along with cutting adheres to the microelectromechanical mechanism 8 and interferes with its operation.

次に、本発明の電子装置の製造方法について、図3(a)〜(e)に基づいて説明する。図3は本発明の電子装置の製造方法の実施の形態の一例をそれぞれ工程順に示した断面図であり、図3において図1および図2と同じ部位には同じ符号を付してある。   Next, a method for manufacturing an electronic device according to the present invention will be described with reference to FIGS. FIG. 3 is a sectional view showing an example of an embodiment of an electronic device manufacturing method according to the present invention in the order of steps. In FIG. 3, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals.

まず、図3(a)に示すように、半導体基板7の主面に、微小電子機械機構8およびこれに電気的に接続された電極9が形成されて成る電子部品領域10aを多数個、縦横に配列形成した多数個取り電子部品10bを準備する。   First, as shown in FIG. 3A, a large number of electronic component regions 10a each having a microelectromechanical mechanism 8 and electrodes 9 electrically connected thereto are formed on the main surface of the semiconductor substrate 7. A multi-cavity electronic component 10b arranged in an array is prepared.

半導体基板7は、例えば単結晶や多結晶等のシリコン基板から成る。   The semiconductor substrate 7 is made of a silicon substrate such as a single crystal or polycrystal.

このシリコン基板の表面に酸化シリコン層を形成するとともに、フォトリソグラフィ等の微細配線加工技術を応用して、微小な振動体等の微小電子機械機構8および円形状パターン等の導体から成る電極9が形成された電子部品領域10aを多数個配列形成することにより多数個取り電子部品10bが形成される。なお、この例においては、微小電子機械機構8と電極9とは、それぞれ半導体基板7の主面に形成された微細配線(図示せず)を介して電気的に接続されている。   A silicon oxide layer is formed on the surface of the silicon substrate, and by applying a fine wiring processing technique such as photolithography, a micro electromechanical mechanism 8 such as a minute vibrating body and an electrode 9 made of a conductor such as a circular pattern are provided. A plurality of electronic component parts 10b are formed by arranging a large number of the formed electronic component regions 10a. In this example, the microelectromechanical mechanism 8 and the electrode 9 are electrically connected via fine wiring (not shown) formed on the main surface of the semiconductor substrate 7, respectively.

次に、図3(b)に示すように、絶縁母基板の一方主面に多数個縦横に配列形成された、一方主面から他方主面または側面に導出された複数の配線導体2が形成された絶縁基板領域1aと、各絶縁基板領域1aの一方主面に形成された、配線導体2と電気的に接続された接続パッド3と、各絶縁基板領域1aの一方主面に接続パッド3を取り囲むようにして接合された枠部材4と、接続パッド3上に形成された、枠部材4と同じ高さの接続端子5と、絶縁母基板の他方主面に形成された電子素子(図示せず)を収容するための凹部12と、凹部12の内側に形成され、配線導体2と電気的に接続された電子素子接続用パッド13とを具備する多数個取り用電子部品封止用基板6aを準備する。   Next, as shown in FIG. 3B, a plurality of wiring conductors 2 are formed on one main surface of the insulating mother board, arranged in rows and columns and extending from one main surface to the other main surface or side surfaces. Insulated substrate region 1a, connection pad 3 electrically connected to wiring conductor 2 formed on one main surface of each insulating substrate region 1a, and connection pad 3 formed on one main surface of each insulating substrate region 1a Frame member 4 joined so as to surround the terminal, connection terminal 5 formed on connection pad 3 at the same height as frame member 4, and an electronic element formed on the other main surface of the insulating mother board (FIG. (Not shown), and a multi-piece electronic component sealing substrate comprising: a recess 12 for housing the electronic element connection pad 13 formed inside the recess 12 and electrically connected to the wiring conductor 2 Prepare 6a.

一方主面から他方主面または側面に導出された配線導体2が形成された絶縁母基板は、例えば、絶縁母基板が酸化アルミニウム質焼結体から成り、配線導体2がタングステンのメタライズ層から成る場合であれば、酸化アルミニウム、酸化珪素、酸化カルシウム等の原料粉末を、有機樹脂、バインダとともに混練してスラリーを得て、このスラリーをドクターブレード法やリップコータ法等によりシート状に成形して複数のグリーンシートを形成し、このグリーンシートの表面に、および必要に応じてグリーンシートにあらかじめ形成しておいた貫通孔内に、タングステンのメタライズペーストを印刷塗布、充填し、その後、これらのグリーンシートを積層して焼成することにより形成することができる。   The insulating mother board on which the wiring conductor 2 led out from one main surface to the other main surface or side surface is formed, for example, the insulating mother board is made of an aluminum oxide sintered body, and the wiring conductor 2 is made of a metallized layer of tungsten. In some cases, raw powders such as aluminum oxide, silicon oxide, and calcium oxide are kneaded with an organic resin and a binder to obtain a slurry, and the slurry is formed into a sheet by a doctor blade method, a lip coater method, or the like. A green metal sheet is formed, and a metallized paste of tungsten is printed on the surface of the green sheet and, if necessary, in the through holes previously formed in the green sheet, filled, and then these green sheets Can be formed by laminating and firing.

なお、これらのグリーンシートのうち、一部のものに打ち抜き加工を施して四角形状等の開口部を縦横に配列形成しておき、これを他方主面側の最表層に配置し、または最表層から内部に向かって数層積層するようにして、焼成後の絶縁母基板の他方主面の各絶縁基板領域1aにそれぞれ凹部12が形成される。   Of these green sheets, some of the green sheets are punched to form square-shaped openings arranged vertically and horizontally, which are arranged on the outermost layer on the other main surface side, or the outermost layer. Recesses 12 are formed in each insulating substrate region 1a on the other main surface of the fired insulating mother substrate so that several layers are laminated from the inside toward the inside.

また、これらのグリーンシートのうち、一部のものに打ち抜き加工を施して四角形状等の開口部を形成しておき、これを一方主面側の最表層に配置し、または最表層から内部に向かって数層積層するようにして、焼成後の絶縁母基板の一方主面に他の凹部が形成される。他の凹部を、平面視で凹部12と重なるようにして形成しておくと、例えば、絶縁母基板をグリーンシートを焼成することにより形成するときに、焼成にともなう収縮が、一方主面側と他方主面側とで同じような挙動となり、収縮にともなう応力を効果的に相殺させることができるため絶縁母基板が作製中にそることが少なくなり絶縁母基板の各絶縁基板領域1aとMEMS間の1次実装面の信頼性がより増すことなる。   In addition, a part of these green sheets is punched to form an opening such as a square shape, which is disposed on the outermost layer on one main surface side, or from the outermost layer to the inside. The other concave portion is formed on one main surface of the fired insulating mother substrate so that several layers are laminated. When the other concave portion is formed so as to overlap with the concave portion 12 in plan view, for example, when the insulating mother substrate is formed by firing the green sheet, the shrinkage caused by the firing is reduced to the one main surface side. On the other side, the same behavior is obtained on the other main surface side, and the stress accompanying the shrinkage can be effectively offset, so that the insulating mother substrate is less likely to be warped during fabrication, and between each insulating substrate region 1a of the insulating mother substrate and the MEMS. The reliability of the primary mounting surface is further increased.

また、このように一方主面側に他の凹部を設けておくと、他の凹部の内側に微小電子機械機構8を収めることができるので、微小電子機械機構8を取り囲むための枠部材4の高さを低く抑えることができ、電子装置の低背化に有利なものとなる。   In addition, when the other concave portion is provided on the one main surface side in this way, the micro electro mechanical mechanism 8 can be accommodated inside the other concave portion, so that the frame member 4 for enclosing the micro electro mechanical mechanism 8 is provided. The height can be kept low, which is advantageous for reducing the height of the electronic device.

また、接続パッド3は、通常、配線導体2と同様の材料から成り、例えば、タングステンのペーストを絶縁母基板となるグリーンシートのうち最表面に、配線導体2となる印刷されたタングステンペーストと接続されるようにして、かつ多数個が縦横に配列形成されるようにして、スクリーン印刷法等により印刷しておくことにより形成される。   The connection pad 3 is usually made of the same material as that of the wiring conductor 2. For example, a tungsten paste is connected to the printed tungsten paste that becomes the wiring conductor 2 on the outermost surface of the green sheet that becomes the insulating mother substrate. In this manner, a large number are arranged in rows and columns and printed by screen printing or the like.

また、枠部材4は、例えば、鉄−ニッケル−コバルト合金から成る場合であれば、鉄−ニッケル−コバルト合金の金属板に圧延加工や金型による打ち抜き加工またはエッチング加工を行ない、枠状に成形することにより製作される。   Further, if the frame member 4 is made of, for example, an iron-nickel-cobalt alloy, the metal plate of the iron-nickel-cobalt alloy is subjected to a rolling process, a punching process using a mold, or an etching process to form a frame shape. It is manufactured by doing.

枠部材4と絶縁母基板との接合は、錫−銀系等の半田,金−錫ろう等の低融点ろう材や銀−ゲルマニウム系等の高融点ろう材,導電性有機樹脂等の接合材を介して接合する方法、あるいはシーム溶接、電子ビーム溶接等の溶接法により行なうことができる。   The frame member 4 and the insulating mother board are joined by a solder such as tin-silver solder, a low-melting solder such as gold-tin solder, a high-melting solder such as silver-germanium, or a conductive organic resin. It can be carried out by a method of joining via a welding method or a welding method such as seam welding or electron beam welding.

この枠部材4と同じ高さとなるようにして、接続端子5が接続パッド3上に形成される。接続端子5は、例えば、錫−銀系等の半田から成る場合であれば、この半田のボールを接続パッド3上に位置決めして加熱、溶融、接合させることにより形成される。   Connection terminals 5 are formed on the connection pads 3 so as to have the same height as the frame member 4. If the connection terminal 5 is made of, for example, tin-silver solder, the connection terminal 5 is formed by positioning, heating, melting, and joining the solder balls on the connection pads 3.

接続端子5の高さを枠部材4の高さと同じとする方法としては、例えば、接続端子5となる錫−銀半田を溶融させて接続パッド3上に取着形成する際に、その上面を枠部材4と同じ高さとなるようにしてセラミックス製の治具等で押さえておく等の方法を用いることができる。   As a method of making the height of the connection terminal 5 the same as the height of the frame member 4, for example, when the tin-silver solder used as the connection terminal 5 is melted and formed on the connection pad 3, the upper surface thereof is changed. It is possible to use a method such as pressing with a ceramic jig or the like so as to be the same height as the frame member 4.

次に、図3(c)に示すように、多数個取り電子部品10bを多数個取り用電子部品封止用基板6aに対し各電子部品領域10aと各絶縁基板領域1aとを対応させて重ね合わせ、電極7を接続端子5に接合するとともに、微小電子機械機構8の周囲の半導体基板7の主面を枠部材4の主面に接合して、微小電子機械機構8を枠部材4の内側に気密封止する。   Next, as shown in FIG. 3C, the multi-piece electronic component 10b is overlapped with the multi-piece electronic component sealing substrate 6a so that each electronic component region 10a and each insulating substrate region 1a correspond to each other. In addition, the electrode 7 is joined to the connection terminal 5, and the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 is joined to the main surface of the frame member 4. Hermetically seal.

ここで、電極7と接続端子5との接合は、例えば、接続端子5が錫−銀系半田から成る場合であれば、電極7上に接続端子5を位置合わせして載せ、これらを約250℃〜300℃程度の温度のリフロー炉中で熱処理すること等により行なわれる。   Here, when the electrode 7 and the connection terminal 5 are joined, for example, when the connection terminal 5 is made of tin-silver solder, the connection terminal 5 is aligned and placed on the electrode 7, and these are placed at about 250. For example, the heat treatment is performed in a reflow furnace at a temperature of about from ℃ to 300 ℃.

また、微小電子機械機構8の周囲の半導体基板7の主面と枠部材4の主面との接合は、例えば、この接合面に、接続端子5と同様の錫−銀系の半田を挟んでおき、上述の電極7と接続端子5との接合と同時にリフロー炉中で熱処理することにより行なうことができる。   In addition, the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 and the main surface of the frame member 4 are joined, for example, with a tin-silver solder similar to the connection terminal 5 sandwiched between the joint surfaces. In addition, the heat treatment can be performed in a reflow furnace simultaneously with the joining of the electrode 7 and the connection terminal 5 described above.

この場合、接続端子5の高さを枠部材4の高さと同じとしていることから、電極7と接続端子5との接合と、枠部材4の主面と半導体基板7の主面との接合を容易かつ確実に、同時に行なうことができる。   In this case, since the height of the connection terminal 5 is the same as the height of the frame member 4, the bonding between the electrode 7 and the connection terminal 5 and the bonding between the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 are performed. It can be done easily and reliably at the same time.

このように、本発明の電子装置の製造方法によれば、電子部品領域10aの電極7の外部導出のための接合と、微小電子機械機構8の気密封止のための接合とを同時に行なうことができるため、数時間程度を要する半田(ろう)付け等の接合の工程を、従来の製造方法に比べて、確実に少なくとも1工程減らすことができるので、電子装置の生産性を非常に高めることができる。   As described above, according to the method for manufacturing an electronic device of the present invention, the bonding for leading out the electrode 7 in the electronic component region 10a and the bonding for hermetically sealing the microelectromechanical mechanism 8 are simultaneously performed. Therefore, it is possible to reliably reduce at least one step of joining such as soldering that requires several hours as compared with the conventional manufacturing method, so that the productivity of electronic devices is greatly increased. Can do.

そして、図3(d)に示すように、互いに接合された多数個取り電子部品10bおよび多数個取り用電子部品封止用基板6aを電子部品領域10aおよび各絶縁基板領域1a毎に分割して、電子部品封止用基板6に電子部品電子部品10が接合されて成る個々の電子装置を得る。   Then, as shown in FIG. 3D, the multi-piece electronic component 10b and the multi-piece electronic component sealing substrate 6a joined to each other are divided into the electronic component region 10a and each insulating substrate region 1a. Then, individual electronic devices obtained by bonding the electronic component electronic component 10 to the electronic component sealing substrate 6 are obtained.

互いに接合された、それぞれ多数個取りの形態の電子部品10bおよび電子部品封止用基板6の接合体の切断は、この接合体に対して、ダイシング加工等の切断加工を施すことにより行なうことができる。   The joined body of the electronic component 10b and the electronic component sealing substrate 6 that are joined together and cut together is cut by performing a cutting process such as dicing on the joined body. it can.

本発明の電子装置の製造方法においては、このダイシング加工等の切断加工の際に、各微小電子機械機構8は枠部材4の内側でこの枠部材4と半導体基板7と絶縁基板1とにより気密封止されているので、半導体基板7や絶縁基板1等の切断に伴って発生するシリコンやセラミックス等の切削粉等が微小電子機械機構8に付着することはなく、完成した電子装置において、微小電子機械機構8を確実に正常に作動させることができる。   In the method of manufacturing an electronic device according to the present invention, each microelectromechanical mechanism 8 is separated by the frame member 4, the semiconductor substrate 7, and the insulating substrate 1 inside the frame member 4 during the cutting process such as dicing. Since it is hermetically sealed, cutting powder such as silicon or ceramics generated when the semiconductor substrate 7 or the insulating substrate 1 is cut does not adhere to the microelectromechanical mechanism 8, and in the completed electronic device, The electronic mechanical mechanism 8 can be reliably operated normally.

このように、本発明の電子装置の製造方法によれば、従来のように、半導体基板7の主面に多数個を縦横に配列形成した電子部品領域10aを切断する際に、その微小電子機械機構8をガラス板等で覆って保護するような工程装置を別途追加する必要はなく、この、保護のためだけという工程を確実に削除することができるので、電子装置の生産性を非常に高いものとすることができる。   As described above, according to the method for manufacturing an electronic device of the present invention, when cutting the electronic component region 10a in which a large number are vertically and horizontally formed on the main surface of the semiconductor substrate 7 as in the prior art, the microelectronic machine is cut. It is not necessary to separately add a process device that covers and protects the mechanism 8 with a glass plate or the like, and the process only for protection can be surely deleted, so that the productivity of the electronic device is very high. Can be.

また、このようにして製造された電子装置は、すでに気密封止されているとともに、その電極が配線導体2を介して外部に導出された状態であるので、これを別途パッケージ内に実装するような工程を追加する必要はなく、配線導体2の導出された部分を外部の電気回路に半田ボール等の外部端子11を介して接続するだけで、外部電気回路基板に実装して使用することができる。   In addition, the electronic device manufactured in this way is already hermetically sealed, and the electrode is led out to the outside through the wiring conductor 2, so that it is mounted in a separate package. There is no need to add an additional process, and it is possible to mount and use it on an external electric circuit board simply by connecting the lead-out portion of the wiring conductor 2 to an external electric circuit via an external terminal 11 such as a solder ball. it can.

また、この場合、配線導体2は、絶縁基体1の他方主面または側面に導出されているので、外部電気回路に表面実装の形態で接続することができ、高密度に実装することや、外部電気回路の基板を効果的に小型化することができる。   Further, in this case, since the wiring conductor 2 is led out to the other main surface or side surface of the insulating base 1, it can be connected to an external electric circuit in the form of surface mounting, and can be mounted at a high density, The substrate of the electric circuit can be effectively downsized.

なお、本発明は上述の実施の形態の例に限定されるものではなく、本発明の要旨の範囲内であれば、種々の変形は可能である。   In addition, this invention is not limited to the example of above-mentioned embodiment, A various deformation | transformation is possible if it is in the range of the summary of this invention.

例えば、上述の実施の形態の例では一つの電子装置内に一つの微小電子機械機構を気密封止したが、一つの電子装置内に複数の微小電子機械機構を気密封止してもよい。   For example, in the example of the above-described embodiment, one microelectromechanical mechanism is hermetically sealed in one electronic device, but a plurality of microelectromechanical mechanisms may be hermetically sealed in one electronic device.

また、図1に示した例では、配線導体2は絶縁基板1の他方主面側に導出しているが、これを、側面に導出したり、側面および他方主面の両方に導出したりしてもよい。また、この導出された部分の外部電気回路への電気的な接続は、外部端子として半田ボールを介して行なうものに限らず、リード端子や導電性接着剤等を介して行なってもよい。   Further, in the example shown in FIG. 1, the wiring conductor 2 is led out to the other main surface side of the insulating substrate 1, but this is led out to the side surface or led to both the side surface and the other main surface. May be. Further, the electrical connection of the derived portion to an external electric circuit is not limited to being performed via a solder ball as an external terminal, and may be performed via a lead terminal, a conductive adhesive, or the like.

また、凹部12はデカップリングコンデンサやチョークコイル等の収容にのみ使用されるものではなく、その他半導体集積回路素子等の半導体素子などを実装してもよい。   Further, the recess 12 is not used only for accommodating a decoupling capacitor, a choke coil, or the like, but may be mounted with other semiconductor elements such as a semiconductor integrated circuit element.

本発明の電子部品封止用基板の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the board | substrate for electronic component sealing of this invention. 本発明の電子部品封止用基板の実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the board | substrate for electronic component sealing of this invention. (a)〜(d)は、本発明の電子装置の製造方法の実施の形態の一例をそれぞれ工程順に示した断面図である。(A)-(d) is sectional drawing which showed an example of embodiment of the manufacturing method of the electronic device of this invention in order of the process, respectively. 従来の電子部品封止用基板およびそれを用いて成る電子装置の一例を示す断面図である。It is sectional drawing which shows an example of the conventional board | substrate for electronic component sealing, and an electronic apparatus using the same.

符号の説明Explanation of symbols

1:絶縁基板
2:配線導体
3:接続パッド
4:枠部材
5:接続端子
6:電子部品封止用基板
6a:多数個取り用電子部品封止用基板
7:半導体基板
8:微小電子機械機構
9:電極
10:電子部品
10a:電子部品領域
10b:電子部品
11:外部端子
12:凹部
13:電子素子接続用パット
1: Insulating substrate 2: Wiring conductor 3: Connection pad 4: Frame member 5: Connection terminal 6: Electronic component sealing substrate 6a: Multi-component electronic component sealing substrate 7: Semiconductor substrate 8: Micro-electromechanical mechanism 9: Electrode 10: Electronic component 10a: Electronic component region 10b: Electronic component 11: External terminal 12: Recess 13: Pad for connecting electronic elements

Claims (6)

一方主面から他方主面または側面に導出された配線導体が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記絶縁基板の前記一方主面に、前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記絶縁基板の前記他方主面に形成された電子素子を収容するための凹部と、該凹部の内側に形成され、前記配線導体と電気的に接続された電子素子接続用パッドとを具備しており、半導体基板の主面に微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品の前記電極を前記接続端子に接合し、前記半導体基板の前記主面を前記枠部材の主面に接合することによって、前記枠部材の内側に前記電子部品の前記微小電子機械機構が気密封止されることを特徴とする電子部品封止用基板。 An insulating substrate on which a wiring conductor led out from one main surface to the other main surface or side surface is formed; a connection pad formed on the one main surface of the insulating substrate and electrically connected to the wiring conductor; A frame member joined to the one main surface of the insulating substrate so as to surround the connection pad; a connection terminal formed on the connection pad and having the same height as the frame member; and A semiconductor substrate comprising: a recess for accommodating an electronic element formed on the other main surface; and an electronic element connection pad formed inside the recess and electrically connected to the wiring conductor. The electrode of an electronic component formed by forming a microelectromechanical mechanism and an electrode electrically connected thereto on the main surface of the semiconductor substrate is joined to the connection terminal, and the main surface of the semiconductor substrate is bonded to the main surface of the frame member By joining to Electronic component sealing substrate to the inside of the member electronic component of the micro electronic mechanical system is characterized in that the hermetically sealed. 前記凹部は、平面視で前記接続パッドよりも内側に形成されていることを特徴とする請求項1記載の電子部品封止用基板。 The electronic component sealing substrate according to claim 1, wherein the concave portion is formed inside the connection pad in a plan view. 前記電子素子は、デカップリングコンデンサまたはチョークコイルであることを特徴とする請求項1または請求項2記載の電子部品封止用基板。 3. The electronic component sealing substrate according to claim 1, wherein the electronic element is a decoupling capacitor or a choke coil. 前記絶縁基板の前記一方主面に、前記凹部と平面視で重なるようにして他の凹部が形成されていることを特徴とする請求項1乃至請求項3のいずれかに記載の電子部品封止用基板。 4. The electronic component sealing according to claim 1, wherein another concave portion is formed on the one main surface of the insulating substrate so as to overlap the concave portion in plan view. Substrate. 絶縁母基板の一方主面に多数個縦横に配列形成された、前記一方主面から他方主面または側面に導出された複数の配線導体が形成された絶縁基板領域と、該各絶縁基板領域の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記各絶縁基板領域の前記一方主面に前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記絶縁基板の前記他方主面に形成された電子素子を収容するための凹部と、該凹部の内側に形成され、前記配線導体と電気的に接続された電子素子接続用パッドとを具備しており、半導体基板の主面に微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品の前記電極を前記接続端子に接合し、前記半導体基板の前記主面を前記枠部材の主面に接合することによって、前記各絶縁基板領域の前記枠部材の内側に前記電子部品の前記微小電子機械機構をそれぞれ気密封止することを特徴とする多数個取り用電子部品封止用基板。 Insulating substrate regions in which a plurality of wiring conductors led out from the one main surface to the other main surface or side surfaces are formed on one main surface of the insulating mother substrate in a vertical and horizontal manner, and each of the insulating substrate regions A connection pad formed on the one main surface and electrically connected to the wiring conductor; a frame member joined to the one main surface of each insulating substrate region so as to surround the connection pad; A connection terminal formed on a connection pad and having the same height as the frame member, a recess for accommodating an electronic element formed on the other main surface of the insulating substrate, and formed inside the recess, An electronic component connecting pad electrically connected to the wiring conductor, and an electronic component formed by forming a microelectromechanical mechanism and an electrode electrically connected to the main surface of a semiconductor substrate. Join the electrode to the connection terminal Bonding the main surface of the semiconductor substrate to the main surface of the frame member to hermetically seal the microelectromechanical mechanism of the electronic component inside the frame member in each insulating substrate region, respectively. A substrate for sealing electronic parts for multi-piece production. 半導体基板の主面に、微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品領域を多数個縦横に配列形成した多数個取り電子部品を準備する工程と、絶縁母基板の一方主面に多数個縦横に配列形成された、前記一方主面から他方主面または側面に導出された複数の配線導体が形成された絶縁基板領域と、該各絶縁基板領域の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記各絶縁基板領域の前記一方主面に前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記絶縁基板の前記他方主面に形成された電子素子を収容するための凹部と、該凹部の内側に形成され、前記配線導体と電気的に接続された電子素子接続用パッドとを具備する多数個取り用電子部品封止用基板を準備する工程と、前記多数個取り電子部品の前記各電極を前記各接続端子に接合するとともに、前記各微小電子機械機構の周囲の前記半導体基板の前記主面を前記各枠部材の主面に接合して、前記各微小電子機械機構を前記各枠部材の内側にそれぞれ気密封止する工程と、互いに接合された前記多数個取り電子部品および前記多数個取り用電子部品封止用基板を、前記電子部品領域および絶縁基板領域毎に分割して個々の電子装置を得る工程とを具備することを特徴とする電子装置の製造方法。 A step of preparing a multi-chip electronic component in which a plurality of electronic component regions in which a micro-electromechanical mechanism and electrodes electrically connected thereto are formed on a main surface of a semiconductor substrate are arranged in a vertical and horizontal direction; An insulating substrate region in which a plurality of wiring conductors led out from the one main surface to the other main surface or side surfaces are formed on one main surface of the substrate in a vertical and horizontal manner, and the one of the insulating substrate regions A connection pad electrically connected to the wiring conductor, a frame member bonded to the one main surface of each insulating substrate region so as to surround the connection pad, and the connection pad; The wiring terminal formed on the same height as the frame member, a recess for accommodating an electronic element formed on the other main surface of the insulating substrate, and the wiring formed on the inner side of the recess Electrically connected to the conductor A step of preparing a substrate for encapsulating a multi-piece electronic component having a child element connection pad; joining the electrodes of the multi-piece electronic component to the connection terminals; and Bonding the main surface of the semiconductor substrate around the mechanism to the main surface of each frame member and hermetically sealing each micro-electromechanical mechanism inside each frame member; Dividing the multi-piece electronic component and the multi-piece electronic component sealing substrate into the electronic component region and the insulating substrate region to obtain individual electronic devices. Device manufacturing method.
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JP2010528888A (en) * 2007-06-29 2010-08-26 ノースロップ グルマン リテフ ゲーエムベーハー Component manufacturing method and component
JP5769964B2 (en) * 2008-07-11 2015-08-26 ローム株式会社 MEMS device
CN112020771A (en) * 2018-04-26 2020-12-01 京瓷株式会社 Substrate for mounting electronic component, electronic device, and electronic module

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