JP4781098B2 - Electronic equipment - Google Patents

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JP4781098B2
JP4781098B2 JP2005353227A JP2005353227A JP4781098B2 JP 4781098 B2 JP4781098 B2 JP 4781098B2 JP 2005353227 A JP2005353227 A JP 2005353227A JP 2005353227 A JP2005353227 A JP 2005353227A JP 4781098 B2 JP4781098 B2 JP 4781098B2
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electronic component
region
mounting
component sealing
substrate
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JP2007158155A (en
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康蔵 牧之内
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Kyocera Corp
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Kyocera Corp
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Priority to JP2005353227A priority Critical patent/JP4781098B2/en
Priority to CN2006800502016A priority patent/CN101351399B/en
Priority to EP06832776.6A priority patent/EP1961696B1/en
Priority to PCT/JP2006/322896 priority patent/WO2007058280A1/en
Priority to KR1020087012341A priority patent/KR100998499B1/en
Priority to US12/094,132 priority patent/US7932594B2/en
Publication of JP2007158155A publication Critical patent/JP2007158155A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/94Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Description

本発明は、半導体基板の主面に微小電子機械機構が形成されてなる電子部品を、電子部品封止用基板を用いて封止することにより形成される電子装置に関するものである。   The present invention relates to an electronic device formed by sealing an electronic component having a microelectromechanical mechanism formed on a main surface of a semiconductor substrate using an electronic component sealing substrate.

近年、シリコンウェハ等の半導体基板の主面に、半導体集積回路素子等の微細配線を形成する加工技術を応用して、極めて微小な電子機械機構、いわゆるMEMS(Micro Electro Mechanical System)を形成した電子部品が注目され、実用化に向けて開発が進められている。   2. Description of the Related Art In recent years, an electronic device in which a very small electromechanical mechanism, so-called MEMS (Micro Electro Mechanical System), is formed by applying a processing technology for forming fine wiring such as a semiconductor integrated circuit element on a main surface of a semiconductor substrate such as a silicon wafer. Parts are attracting attention, and development is progressing toward practical application.

このような微小電子機械機構としては、加速度センサ,圧力センサ,アクチュエータ等のセンサや、微細な鏡面体を可動式に形成したマイクロミラーデバイスや、光デバイスあるいはマイクロポンプ等を組み込んだマイクロ化学システム等の非常に広い分野にわたるものが試作、開発されている。   Examples of such micro electromechanical mechanisms include sensors such as acceleration sensors, pressure sensors, and actuators, micro mirror devices in which fine mirror bodies are movably formed, micro chemical systems incorporating optical devices, micro pumps, etc. Prototypes have been developed and developed in a wide range of fields.

このような微小電子機械機構は、機械的な動作を妨げるような異物の付着の防止や、安定した機械的な動作環境の確保のために、中空状態の容器内に気密封止して電子装置とした後、各種機器に実装して使用する必要がある。   Such a micro-electromechanical mechanism is an electronic device that is hermetically sealed in a hollow container in order to prevent adhesion of foreign matters that interfere with mechanical operation and to ensure a stable mechanical operating environment. After that, it is necessary to mount and use in various devices.

従来、このような容器は、微小電子機械機構が形成されている半導体基板の主面に他の半導体基板(封止用の半導体基板)を取着することにより形成されていた。この封止用の半導体基板には、例えば、微小電子機械機構を取り囲んで封止するような凹部が形成されている。   Conventionally, such a container has been formed by attaching another semiconductor substrate (semiconductor substrate for sealing) to the main surface of the semiconductor substrate on which the microelectromechanical mechanism is formed. In the semiconductor substrate for sealing, for example, a recess is formed so as to surround and seal the micro-electromechanical mechanism.

一方、上記従来技術で作製された電子装置の場合、各半導体基板は、その内部に3次元状の配線導体を形成することができないので、微小電子機械機構が実装されている容器の内側から、対向する露出側の主面にかけて配線導体を導出させることが難しい。そのため、配線導体の導出部位を外部電気回路の所定部位に対向させて直接接続する、いわゆる表面実装が難しいという問題を有していた。   On the other hand, in the case of the electronic device manufactured by the above prior art, since each semiconductor substrate cannot form a three-dimensional wiring conductor therein, from the inside of the container in which the microelectromechanical mechanism is mounted, It is difficult to lead out the wiring conductor over the main surface on the opposite exposed side. Therefore, there is a problem that so-called surface mounting, in which the lead-out portion of the wiring conductor is directly connected to face a predetermined portion of the external electric circuit, is difficult.

このような問題に対し、表面実装が可能な形態で電子装置を形成することのできる技術として、本出願人は、以前、セラミック材料等の絶縁材料からなる絶縁基板を用いて形成した電子部品封止用基板、およびその電子部品封止用基板を用いた電子装置の製造方法(微小電子機械機構の封止方法)を提案した(特許文献1参照。)
特許文献1に記載の技術において、電子部品封止用基板は、絶縁基板に、微小電子機械機構を内側に収めるような枠部材と、電極に電気的に接続される接続パッドおよび接続端子が、それぞれ電子部品の微小電子機械機構および電極と対向して配設されている。
As a technology that can form an electronic device in a form that can be surface-mounted in response to such a problem, the present applicant has previously encapsulated an electronic component formed by using an insulating substrate made of an insulating material such as a ceramic material. A method for manufacturing an electronic device (a method for sealing a micro-electromechanical mechanism) using the stopping substrate and the electronic component sealing substrate has been proposed (see Patent Document 1).
In the technique described in Patent Document 1, the electronic component sealing substrate includes an insulating substrate, a frame member that houses the micro electromechanical mechanism inside, a connection pad and a connection terminal that are electrically connected to the electrode, Each is disposed opposite to the micro electro mechanical mechanism and the electrode of the electronic component.

この電子部品封止用基板によれば、例えば、セラミック多層配線基板等の絶縁基板を用いて形成されたものとすることにより、微小電子機械機構が気密封止されている容器の内部から絶縁基板の露出する表面にかけて配線導体を導出させることができる。そのため、この導出された端部を実装パッドとして外部電気回路に接続させるようにすることにより、表面実装が可能な電子装置を作製することができる。   According to this electronic component sealing substrate, for example, it is formed using an insulating substrate such as a ceramic multilayer wiring substrate, so that the insulating substrate is insulated from the inside of the container in which the microelectromechanical mechanism is hermetically sealed. The wiring conductor can be led out over the exposed surface. Therefore, an electronic device capable of surface mounting can be manufactured by connecting the derived end portion to an external electric circuit as a mounting pad.

また、この電子部品封止用基板を用いた電子装置の製造方法によれば、電子部品封止用基板および電子部品をそれぞれ、複数が絶縁基板または半導体基板に縦横に配列された、いわゆる多数個取りとすることにより、表面実装が可能な電子装置を、生産性を高くして製造することができる。すなわち、半導体基板に配列された多数個の電子部品(微小電子機械機構等)に、この配列された各電子部品に対応して配列形成された電子部品封止用基板(電子部品封止用領域)をそれぞれ重ね合わせて接合することによって、多数の微小電子機械機構を一括して封止することができる。また、この封止の際、電子部品の電極と電子部品封止用基板の配線導体との電気的導通を一括して行なうこともできるので、互いに接合されたそれぞれ多数個取りの形態の電子部品および電子部品封止用基板を個片に分割することによって個々の電子装置を多数個同時に製造することができる。   Further, according to the method for manufacturing an electronic device using the electronic component sealing substrate, a plurality of so-called multiple electronic component sealing substrates and electronic components are arranged vertically and horizontally on an insulating substrate or a semiconductor substrate, respectively. Thus, an electronic device capable of surface mounting can be manufactured with high productivity. That is, an electronic component sealing substrate (electronic component sealing region) arranged in correspondence with each of the arranged electronic components on a large number of electronic components (micro-electromechanical mechanisms, etc.) arranged on a semiconductor substrate ) Can be sealed together in a lump. In addition, since the electrical connection between the electrode of the electronic component and the wiring conductor of the electronic component sealing substrate can be performed at the same time during the sealing, each of the electronic components in the form of multiple pieces joined together. Further, by dividing the electronic component sealing substrate into individual pieces, a large number of individual electronic devices can be manufactured simultaneously.

製造された個々の電子装置は、例えば、実装パッドが半田等の導電性接合材を介して、外部電気回路基板の対応する端子等の所定部位に電気的,機械的に接続される。   In each manufactured electronic device, for example, a mounting pad is electrically and mechanically connected to a predetermined portion such as a corresponding terminal of an external electric circuit board via a conductive bonding material such as solder.

なお、この電子部品封止用基板の下面に形成された実装パッドは、外部電気回路との接続を考慮して、通常は、電子部品封止用基板の下面の外周部に沿って形成されている。
特開2004−296724号公報
The mounting pad formed on the lower surface of the electronic component sealing substrate is usually formed along the outer peripheral portion of the lower surface of the electronic component sealing substrate in consideration of connection with an external electric circuit. Yes.
JP 2004-296724 A

しかしながら、上記特許文献1に記載の技術においては、微小電子機械機構の封止と、電極を外部に導出させるための電気的な接続とが同時に行なえること等により電子装置の生産性を高くすることができ、また、表面実装が可能な電子装置を容易に作製することができるものの、近年、光変調素子や周波数フィルタ用途等で使用される微小電子機械機構、特に、半導体基板の主面の中央部に柱状等の支持部を介して梁状等の振動部が配設された構造を有する微小電子機械機構を備える電子装置においては、次のような不具合を十分に抑制しきれない可能性が生じてきた。   However, in the technique described in Patent Document 1, the productivity of the electronic device is increased by simultaneously performing sealing of the microelectromechanical mechanism and electrical connection for leading the electrode to the outside. In addition, although it is possible to easily produce an electronic device that can be surface-mounted, in recent years, a microelectromechanical mechanism used for a light modulation element, a frequency filter, etc., in particular, a main surface of a semiconductor substrate. In an electronic device having a microelectromechanical mechanism having a structure in which a vibrating portion such as a beam is disposed through a support portion such as a column in the center, the following problems may not be sufficiently suppressed Has arisen.

すなわち、このような、動作の範囲が数10μm以下の構造を有する微小電子機械機構では、わずかな支持部の歪みでも、振動部による振動等の機械的な作動に、例えば、磁界や電界のオン・オフに対する振動部の応答速度が一定にならない等の不具合を誘発し、電子装置としての特性や信頼性を十分に確保できない可能性が生じてしまう。   That is, in such a micro-electromechanical mechanism having a structure whose operation range is several tens of μm or less, even a slight distortion of the support portion can be used for mechanical operation such as vibration by the vibration portion, for example, turning on a magnetic field or an electric field.・ Inducing a problem such that the response speed of the vibration part with respect to OFF is not constant, and there is a possibility that characteristics and reliability as an electronic device cannot be sufficiently secured.

このような問題について研究した結果、本発明者は、上記の微小電子機械機構を形成した電子部品を封止して得られた電子装置を外部電気回路に半田等を用いて実装する際や電子部品の駆動などに伴って熱負荷が加えられたときに、セラミックス材料で形成した電子部品封止用基板と、エポキシ樹脂などで形成された外部電気回路との熱膨張差に起因して発生する応力、およびこの応力により生じる電子部品封止用基板(絶縁基板)の反り等の変形が微小電子機械機構の駆動に影響を与え、これにより上記の不具合が誘発されるということを見出した。   As a result of studying such a problem, the present inventor has found that the electronic device obtained by sealing the electronic component on which the micro electro mechanical mechanism is formed is mounted on an external electric circuit using solder or the like. When a thermal load is applied as a part is driven, etc., this occurs due to a difference in thermal expansion between the electronic component sealing substrate formed of a ceramic material and an external electric circuit formed of an epoxy resin or the like. It has been found that deformations such as stress and warpage of the electronic component sealing substrate (insulating substrate) caused by the stress affect the driving of the microelectromechanical mechanism, thereby inducing the above-mentioned problems.

つまり、電子装置が加熱され、その後冷却する際に、上記の応力によって電子部品封止用基板は変形(反りなど)を生じ、この変形にともなって、電子部品封止用基板と枠部材を介して機械的に接合されている、微小電子機械機構を形成した半導体基板にも変形が生じる。この半導体基板の変形が、例えば、駆動電圧の印加によって振動する振動部を支持した構造の微小電子機械機構の支持部に応力として作用すると、振動部が変形したり、歪みが発生したりする。   That is, when the electronic device is heated and then cooled, the electronic component sealing substrate is deformed (warped or the like) due to the stress, and the electronic component sealing substrate and the frame member are caused by the deformation. The semiconductor substrate that is mechanically bonded and formed with the microelectromechanical mechanism is also deformed. For example, when the deformation of the semiconductor substrate acts as a stress on a support portion of a microelectromechanical mechanism having a structure that supports a vibration portion that vibrates when a drive voltage is applied, the vibration portion is deformed or distorted.

振動部の形状、例えば、梁状の部分の長さや支持部との接点間の間隔等は、駆動電圧の大きさや信号の周波数などの電子装置の動作条件に応じて設定されているので、振動部に変形や歪みが生じると、振動部の応答速度が変化したり、振動部が正しく接点と接触しなくなったりすることによって、電子装置の誤動作を生じてしまう。また、変形や歪みを生じた部分等において、長期間にわたって高速で繰り返し振動する振動部にクラックなどが発生し信頼性が低下するなどの問題点もあることが分かってきた。   Since the shape of the vibrating part, for example, the length of the beam-like part and the distance between the contacts with the support part, etc. are set according to the operating conditions of the electronic device such as the magnitude of the driving voltage and the frequency of the signal, vibration When the part is deformed or distorted, the response speed of the vibration part is changed, or the vibration part does not properly contact the contact point, thereby causing malfunction of the electronic device. In addition, it has been found that there is a problem that in a part where deformation or distortion occurs, a crack or the like is generated in a vibration part that vibrates repeatedly at high speed over a long period of time, resulting in a decrease in reliability.

そこで、電子部品封止用基板と外部電気回路基板とを、リードフレームやボンディングワイヤなどのリード端子を用いて接続するという手法が考えられる。例えば、電子部品封止用基板と外部電気回路基板とがリードフレームを介して電気的、機械的に接続された場合には、電子部品封止用基板と外部電気回路基板との熱膨張差に起因して応力が発生したとしても、リードフレームが変形することでその応力が緩和される。   Therefore, a method of connecting the electronic component sealing substrate and the external electric circuit substrate using lead terminals such as a lead frame and a bonding wire is conceivable. For example, when the electronic component sealing substrate and the external electric circuit substrate are electrically and mechanically connected via the lead frame, the difference in thermal expansion between the electronic component sealing substrate and the external electric circuit substrate is caused. Even if stress is generated due to this, the stress is relieved by the deformation of the lead frame.

これによって、リード端子等による電気的な接続を確保して接続信頼性を向上させることができる。また、電子部品封止用基板を介して電子部品に作用する応力が緩和されるので、微小電子機械機構の歪みや変形を抑制することもできる。   Thereby, electrical connection by a lead terminal etc. can be ensured and connection reliability can be improved. In addition, since the stress acting on the electronic component is relaxed through the electronic component sealing substrate, distortion and deformation of the microelectromechanical mechanism can be suppressed.

しかし、この場合は、リード端子を設置した分だけ電子部品封止用基板の外形は大型化するので、電子装置としての小型化が阻害される。さらに外部電気回路基板にはリード端子と接続するためのスペースを確保する必要があるので、これに搭載される微小電子機械機構が形成された電子部品(電子装置)や、他の電子素子(例えばコンデンサや抵抗器等の受動部品など)の実装密度が低下するおそれがある。   However, in this case, since the outer shape of the electronic component sealing substrate is increased by the amount of the lead terminals, the downsizing of the electronic device is hindered. Furthermore, since it is necessary to secure a space for connecting to the lead terminal on the external electric circuit board, an electronic component (electronic device) in which a microelectromechanical mechanism mounted on the external circuit board is formed, or other electronic elements (for example, The mounting density of passive components such as capacitors and resistors may be reduced.

本発明は、上記の問題点を解決するために案出されたものであり、その目的は、小型で、微小電子機械機構が封止された電子装置に熱が印加されても、微小電子機械機構の駆動精度が高く、信頼性の高い電子装置を提供することにある。   The present invention has been devised in order to solve the above-described problems, and an object of the present invention is to provide a microelectronic machine that is compact even when heat is applied to an electronic device in which the microelectromechanical mechanism is sealed. An object of the present invention is to provide a highly reliable electronic device with high mechanism driving accuracy.

本発明の電子装置は、下面の中央部に微小電子機械機構が形成された電子部品が、上面に前記微小電子機械機構を取り囲む枠状の電子部品封止領域を有し、下面に、外部端子を介して外部電気回路基板に接合される実装パッドが配置された実装領域を有する電子部品封止用基板に、前記微小電子機械機構を前記枠状の電子部品封止領域の内側に封止して搭載されており、前記実装領域は、平面視で前記枠状の電子部品封止領域の中心を通る区分直線によって前記枠状の電子部品封止領域を4等分した4つの区分領域のうち3つ以下の前記区分領域に対向する領域に、複数の前記区分領域に対向する領域に跨がることなく配置されており、前記区分領域に対向する領域において、前記実装領域以外の領域が前記外
部電気回路基板に接合されないことを特徴とするものである。
In the electronic device according to the present invention, an electronic component having a microelectromechanical mechanism formed at the center of the lower surface has a frame-shaped electronic component sealing region surrounding the microelectromechanical mechanism on the upper surface, and an external terminal on the lower surface. The micro electro mechanical mechanism is sealed inside the frame-shaped electronic component sealing region on an electronic component sealing substrate having a mounting region in which mounting pads to be bonded to an external electric circuit board are disposed via The mounting area is composed of four divided areas obtained by dividing the frame-shaped electronic component sealing area into four equal parts by a straight line passing through the center of the frame-shaped electronic component sealing area in a plan view. It is arranged in a region facing three or less of the partition regions without straddling a plurality of regions facing the partition regions, and in the region facing the partition regions, the region other than the mounting region is the region Outside
It is characterized by not being bonded to the partial electric circuit board .

本発明の電子装置は、下面の中央部に微小電子機械機構が形成された電子部品が、上面に前記微小電子機械機構を取り囲む枠状の電子部品封止領域を有し、下面に、外部端子を介して外部電気回路基板に接合される実装パッドが配置された実装領域を有する電子部品封止用基板に、前記微小電子機械機構を前記枠状の電子部品封止領域の内側に封止して搭載されており、前記実装領域は、平面視で前記枠状の電子部品封止領域の中心から外周に向かって伸び、前記枠状の電子部品封止領域を4等分する4つの区分半直線のうち3つ以下の前記区分半直線に対向する線に沿って配置されており、前記区分半直線に対向する領域において、前記実装領域以外の領域が前記外部電気回路基板に接合されないことを特徴とするものである。
In the electronic device according to the present invention, an electronic component having a microelectromechanical mechanism formed at the center of the lower surface has a frame-shaped electronic component sealing region surrounding the microelectromechanical mechanism on the upper surface, and an external terminal on the lower surface. The micro electro mechanical mechanism is sealed inside the frame-shaped electronic component sealing region on an electronic component sealing substrate having a mounting region in which mounting pads to be bonded to an external electric circuit board are disposed via The mounting area extends from the center of the frame-shaped electronic component sealing area toward the outer periphery in plan view, and divides the frame-shaped electronic component sealing area into four equal parts. It is disposed along a line that faces three or less of the segment half-lines among straight lines, and a region other than the mounting region is not joined to the external electric circuit board in the region facing the segment half-lines. It is a feature.

本発明の電子装置によれば、電子部品封止用基板の実装パッドが配置された実装領域を、平面視で枠状の電子部品封止領域を4等分した4つの区分領域のうち3つ以下の区分領域に対向する領域に配置したことから、実装領域が配置されない部位、つまり電子部品封止用基板のうち実装パッドを介して外部電気回路基板と機械的に接続されない部位では応力が生じないので、少なくとも1つの区分領域において、電子部品封止用基板に作用する応力を低く抑えることができる。このような区分領域(低応力部)では歪みも小さいので、電子部品封止用基板と枠部材を介して機械的に接続されている半導体基板にも、歪みの小さい領域を少なくとも一つの区分領域に対向する領域で形成することができる。   According to the electronic device of the present invention, the mounting area in which the mounting pads of the electronic component sealing substrate are arranged is divided into three of four divided areas obtained by dividing the frame-shaped electronic component sealing area into four parts in plan view. Since it is arranged in the area opposite to the following divided areas, stress occurs in the part where the mounting area is not arranged, that is, the part that is not mechanically connected to the external electric circuit board through the mounting pad in the electronic component sealing substrate. Therefore, the stress acting on the electronic component sealing substrate can be kept low in at least one segmented region. Since such a segmented region (low-stressed portion) has a small distortion, at least one segmented region is also defined in the semiconductor substrate mechanically connected to the electronic component sealing substrate via the frame member. It can be formed in a region opposite to.

熱膨張係数の差に起因する応力によって電子部品封止用基板が変形することで電子部品の半導体基板に発生する応力は、実装領域と対向する電子部品の領域で高く、実装領域と対向する電子部品の領域から離れた部位で低くなる。そのため、少なくとも1つの区分領域と平面視で対向する領域において半導体基板に低応力部を形成することができるとともに、微小電子機械機構はこの低応力部に形成することができるので、例えば振動部を備える微小電子機械機構にその応力に起因して歪みが生じることは効果的に防止され、微小電子機械機構の駆動精度を高くすることができる。   The stress generated on the semiconductor substrate of the electronic component due to the deformation of the electronic component sealing substrate due to the stress caused by the difference in thermal expansion coefficient is high in the electronic component region facing the mounting region, and the electron facing the mounting region. It becomes low at the part away from the region of the part. Therefore, a low stress portion can be formed on the semiconductor substrate in a region facing at least one section region in plan view, and the micro electromechanical mechanism can be formed in this low stress portion. It is possible to effectively prevent the microelectromechanical mechanism provided from being distorted due to the stress, and to increase the driving accuracy of the microelectromechanical mechanism.

本発明の電子装置によれば、電子部品封止用基板の実装パッドが配置された実装領域を、平面視で枠状の電子部品封止領域の中心から外周に向かって伸び、枠状の電子部品封止領域を4等分する4つの区分半直線のうち3つ以下の区分半直線に対向する線に沿って配置したことから、実装領域が配置されない部位、つまり電子部品封止用基板のうち実装パッドを介して外部電気回路基板と機械的に接続されない部位では応力が生じないので、少なくとも1つの区分半直線に沿った、区分半直線が含まれる領域において、電子部品封止用基板に作用する応力を低く抑えることができる。このような区分半直線を含む領域(低応力部)では歪みも小さいので、電子部品封止用基板と枠部材を介して機械的に接続されている半導体基板にも歪みの小さい領域を少なくとも一つの区分半直線を含む領域に対向する領域で形成することができる。   According to the electronic device of the present invention, the mounting region where the mounting pads of the electronic component sealing substrate are arranged extends from the center of the frame-shaped electronic component sealing region toward the outer periphery in plan view, and the frame-shaped electronic Since the component sealing area is divided along four lines that divide the component sealing region into four equal parts, and the line is opposed to three or less sectional half lines, the part where the mounting region is not disposed, that is, the electronic component sealing substrate Since stress does not occur in a portion that is not mechanically connected to the external electric circuit board via the mounting pad, the electronic component sealing substrate is formed in a region including the divided half line along at least one divided half line. The acting stress can be kept low. Since the strain (low stress portion) including such a segmented half-line is small, at least one region having low strain is also present on the semiconductor substrate mechanically connected to the electronic component sealing substrate via the frame member. It can be formed in a region facing a region including two segmented half lines.

熱膨張係数の差に起因する応力によって電子部品封止用基板が変形することで電子部品の半導体基板に発生する応力は、実装領域と対向する電子部品の領域で高く、実装領域と対向する電子部品の領域から離れた部位で低くなる。そのため、少なくとも1つの区分半直線を含む領域と平面視で対向する領域において半導体基板に低応力部を形成することができるとともに、微小電子機械機構はこの低応力部に形成することができるので、例えば振動部を備える微小電子機械機構にその応力に起因して歪みが生じることは効果的に防止され、微小電子機械機構の駆動精度を高くすることができる。   The stress generated on the semiconductor substrate of the electronic component due to the deformation of the electronic component sealing substrate due to the stress caused by the difference in thermal expansion coefficient is high in the electronic component region facing the mounting region, and the electron facing the mounting region. It becomes low at the part away from the region of the part. Therefore, a low stress portion can be formed in the semiconductor substrate in a region opposed to the region including at least one section half-line in plan view, and a microelectromechanical mechanism can be formed in the low stress portion. For example, it is possible to effectively prevent distortion caused by the stress in the micro electro mechanical mechanism including the vibrating portion, and to increase the driving accuracy of the micro electro mechanical mechanism.

本発明の電子装置について以下に詳細に説明する。   The electronic device of the present invention will be described in detail below.

(第1の構成)
図1は本発明の電子装置について、その第1の構成における実施の形態の一例を示す断面図である。
(First configuration)
FIG. 1 is a cross-sectional view showing an example of an embodiment of a first configuration of an electronic device according to the present invention.

図1において、11は下面の中央部に微小電子機械機構9が形成された電子部品であり、7は上面に微小電子機械機構9を取り囲む電子部品封止領域を有し、下面に実装パッド6が配置された実装領域を有する電子部品封止用基板である。電子部品封止用基板7を用いて、電子部品11の下面に形成されている微小電子機械機構9を封止することにより、電子装置12が基本的に形成される。   In FIG. 1, reference numeral 11 denotes an electronic component having a micro electro mechanical mechanism 9 formed at the center of the lower surface, and 7 an electronic component sealing region surrounding the micro electro mechanical mechanism 9 on the upper surface, and a mounting pad 6 on the lower surface. It is the board | substrate for electronic component sealing which has the mounting area | region where this is arrange | positioned. The electronic device 12 is basically formed by sealing the microelectromechanical mechanism 9 formed on the lower surface of the electronic component 11 using the electronic component sealing substrate 7.

なお、図1において、1は絶縁基板、2は配線導体、3は接続パッド、4は接続端子、5は封止材、6は実装パッドである。本例においては、これら絶縁基板1,配線導体2,接続パッド3,接続端子4,封止材5および実装パッド6により電子部品封止用基板7が基本的に構成される。   In FIG. 1, 1 is an insulating substrate, 2 is a wiring conductor, 3 is a connection pad, 4 is a connection terminal, 5 is a sealing material, and 6 is a mounting pad. In this example, the insulating substrate 1, the wiring conductor 2, the connection pad 3, the connection terminal 4, the sealing material 5 and the mounting pad 6 basically constitute an electronic component sealing substrate 7.

また、本例において、微小電子機械機構9は半導体基板8の下面に形成されており、その下面には微小電子機械機構9と電気的に接続された電極10が形成されている。電極10が接続端子4を介して接続パッド3と電気的に接続されることにより、微小電子機械機構9が外部接続可能な状態で封止された電子装置12が形成される。   In this example, the micro electro mechanical mechanism 9 is formed on the lower surface of the semiconductor substrate 8, and the electrode 10 electrically connected to the micro electro mechanical mechanism 9 is formed on the lower surface. The electrode 10 is electrically connected to the connection pad 3 through the connection terminal 4, thereby forming the electronic device 12 sealed in a state in which the micro electromechanical mechanism 9 can be externally connected.

半導体基板8は、例えば、単結晶や多結晶等のシリコン基板からなる。このシリコン基板の下面に酸化シリコン層を形成するとともに、その下面の中央部にフォトリソグラフィ等の微細配線加工技術を応用して、微小な振動部等の微小電子機械機構9が形成される。なお、この場合の中央部は、必ずしも中心部とは限らず、微小電子機械機構9を封止するための封止材5等を配置するスペースを確保するのに必要な部位の内側を意味する。例えば、微小電子機械機構9は、図示したように下面の外周側に若干偏って配置されていてもかまわない。   The semiconductor substrate 8 is made of, for example, a silicon substrate such as a single crystal or polycrystal. A silicon oxide layer is formed on the lower surface of the silicon substrate, and a micro-electromechanical mechanism 9 such as a minute vibration portion is formed at the center of the lower surface by applying a fine wiring processing technique such as photolithography. In addition, the center part in this case is not necessarily a center part, and means the inside of a site | part required in order to ensure the space which arrange | positions the sealing material 5 etc. for sealing the microelectromechanical mechanism 9 etc. . For example, the microelectromechanical mechanism 9 may be arranged slightly biased toward the outer peripheral side of the lower surface as shown in the figure.

この半導体基板8の下面には、微小電子機械機構9と、例えば半導体基板8に微細配線技術を用いて形成された微細配線を介して電気的に接続された電極10が、円形状パターン等で形成されている。この例において、電極10は、微小電子機械機構9が形成されている中央部よりも外側の、外周部に形成されている。   On the lower surface of the semiconductor substrate 8, an electrode 10 electrically connected to the micro-electromechanical mechanism 9 via, for example, a fine wiring formed on the semiconductor substrate 8 using a fine wiring technique is formed in a circular pattern or the like. Is formed. In this example, the electrode 10 is formed on the outer peripheral portion outside the central portion where the micro electro mechanical mechanism 9 is formed.

なお、図1において微小電子機械機構9は、一対の柱状の支持部(符号なし)の間で梁状の振動部(符号なし)を支持する両持ち梁構造となっている。この両持ち梁構造の微小電子機械機構9は、振動部に形成された上部電極(図示せず)と半導体基板8に形成された下部電極(図示せず)との間に微小電圧を印加すると、静電現象によって振動部が下部電極に向かって接近し、また電圧の印加を停止すると離間して元の状態に戻る。そして、このような振動部の動作(振動)により、上部電極の高さを変えて反射する光の強度を変調し光変調素子として機能させたり、特定の周波数で振動部を振動させて周波数フィルタとして機能させることなどができる。   In FIG. 1, the microelectromechanical mechanism 9 has a double-supported beam structure that supports a beam-like vibrating portion (no symbol) between a pair of columnar support portions (no symbol). When the microelectromechanical mechanism 9 having the doubly-supported beam structure applies a minute voltage between an upper electrode (not shown) formed on the vibrating portion and a lower electrode (not shown) formed on the semiconductor substrate 8. The vibrating part approaches the lower electrode due to the electrostatic phenomenon, and when the voltage application is stopped, the vibrating part is separated and returns to the original state. Then, by such an operation (vibration) of the vibration part, the height of the upper electrode is changed to modulate the intensity of the reflected light to function as a light modulation element, or the vibration part is vibrated at a specific frequency to be a frequency filter. It can be made to function as.

ただし、本発明における微小電子機械機構9はこれに限られず、例えば、電気スイッチ,インダクタ,キャパシタ,共振器,アンテナ,マイクロリレー,光スイッチ,ハードディスク用磁気ヘッド,マイク,バイオセンサー,DNAチップ,マイクロリアクタ,プリントヘッド,加速度センサ,圧力センサなどの各種センサ、ディスプレイデバイスなどの機能を有する電子装置12であり、半導体微細加工技術を基本としたいわゆるマイクロマシニング法で作る部品であり、1素子あたり10μm〜数百μm程度の寸法を有し、動作中に半導体基板8が変形することによって機能が損なわれるものであれば適用できる。   However, the microelectromechanical mechanism 9 in the present invention is not limited to this. For example, an electrical switch, an inductor, a capacitor, a resonator, an antenna, a microrelay, an optical switch, a magnetic head for a hard disk, a microphone, a biosensor, a DNA chip, and a microreactor. , An electronic device 12 having functions of various sensors such as a print head, an acceleration sensor, and a pressure sensor, and a display device, and is a component made by a so-called micromachining method based on a semiconductor microfabrication technique, and 10 μm to one element The present invention can be applied if it has a dimension of about several hundred μm and its function is impaired by the deformation of the semiconductor substrate 8 during operation.

絶縁基板1は、微小電子機械機構9を封止するための蓋体として機能するとともに、配線導体2,接続パッド3,接続端子4,封止材5および実装パッド6を形成するための基体として機能する。   The insulating substrate 1 functions as a lid for sealing the microelectromechanical mechanism 9, and as a base for forming the wiring conductor 2, connection pad 3, connection terminal 4, sealing material 5, and mounting pad 6. Function.

この絶縁基板1は、酸化アルミニウム質焼結体や窒化アルミニウム質焼結体,ムライト質焼結体,炭化珪素質焼結体,窒化珪素質焼結体,ガラスセラミックス焼結体等のセラミックス材料により形成される。   The insulating substrate 1 is made of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, or a glass ceramic sintered body. It is formed.

絶縁基板1は、例えば、酸化アルミニウム質焼結体からなる場合であれば、酸化アルミニウムとガラス粉末等との原料粉末をシート状に成形してなるセラミックグリーンシートを積層し、焼成することにより形成される。なお、絶縁基板1は、酸化アルミニウム質焼結体で形成するものに限らず、用途や気密封止する電子部品11の特性等に応じて適したものを選択することが好ましい。   If the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, the insulating substrate 1 is formed by laminating and firing ceramic green sheets formed by forming raw material powders of aluminum oxide and glass powder into a sheet shape. Is done. The insulating substrate 1 is not limited to the one formed of an aluminum oxide sintered body, and it is preferable to select a substrate that is suitable for the application and the characteristics of the electronic component 11 to be hermetically sealed.

例えば、絶縁基板1は、後述するように、封止材5を介して半導体基板8と機械的に接合されるので、半導体基板8との接合の信頼性、つまり微小電子機械機構9の封止の気密性を高くするためには、ムライト質焼結体または例えばガラス成分の種類や添加量を調整することにより熱膨張係数を半導体基板8に近似させるようにした酸化アルミニウム−ホウ珪酸ガラス系等のガラスセラミックス焼結体等のような、半導体基板8との熱膨張係数の差が小さい材料で形成することが好ましい。   For example, since the insulating substrate 1 is mechanically bonded to the semiconductor substrate 8 via the sealing material 5 as will be described later, the reliability of bonding with the semiconductor substrate 8, that is, the sealing of the micro electro mechanical mechanism 9 is performed. In order to increase the air tightness of the aluminum oxide-borosilicate glass system in which the coefficient of thermal expansion is approximated to that of the semiconductor substrate 8 by adjusting the kind and addition amount of the mullite sintered body or the glass component, etc. It is preferable to use a material having a small difference in thermal expansion coefficient from the semiconductor substrate 8, such as a glass ceramic sintered body.

また、酸化アルミニウムフィラーにホウ珪酸ガラス系を含んだガラスを焼結したガラスセラミック焼結体は、電気抵抗の小さい銅や銀で配線導体2が形成できるため、また比誘電率が低く電気信号の遅延を防止することができるため、高周波信号を取り扱う絶縁基板1の材料として好ましい。   In addition, a glass ceramic sintered body obtained by sintering glass containing a borosilicate glass system in an aluminum oxide filler can form the wiring conductor 2 with copper or silver having a low electric resistance, and also has a low relative dielectric constant and an electric signal. Since a delay can be prevented, it is preferable as a material for the insulating substrate 1 that handles high-frequency signals.

また、絶縁基板1の上面に、電子部品11の微小電子機械機構9を内側に収めるような凹部13を形成しておいてもよい。凹部13内に微小電子機械機構9の一部を収めるようにしておくと、微小電子機械機構9を取り囲むための封止材5の高さを低く抑えることができ、電子装置12の低背化に有利なものとなる。   In addition, a recess 13 may be formed on the upper surface of the insulating substrate 1 so as to accommodate the microelectromechanical mechanism 9 of the electronic component 11 inside. If a part of the micro electro mechanical mechanism 9 is accommodated in the recess 13, the height of the sealing material 5 for enclosing the micro electro mechanical mechanism 9 can be kept low, and the electronic device 12 can be reduced in height. It will be advantageous to.

絶縁基板1の上面の外周部には、微小電子機械機構9を取り囲むようにして封止材5が枠状に形成されている。この封止材5の内側が、微小電子機械機構9を取り囲む枠状の電子部品封止領域(符号なし)となる。電子部品封止領域の形状は、平面視で四角形や八角形等の多角形状、円形状、楕円形状等である。また、これらの形状の角部を円弧状に成形したり、辺部や円周部の一部に凹凸を設けたものであってもよい。   A sealing material 5 is formed in a frame shape on the outer peripheral portion of the upper surface of the insulating substrate 1 so as to surround the micro electro mechanical mechanism 9. The inside of the sealing material 5 is a frame-shaped electronic component sealing region (no reference numeral) surrounding the micro electronic mechanical mechanism 9. The shape of the electronic component sealing region is a polygonal shape such as a quadrangle or octagon, a circular shape, an elliptical shape, or the like in plan view. Moreover, the corner | angular part of these shapes may be shape | molded in circular arc shape, and the unevenness | corrugation may be provided in a part of side part or a circumference part.

封止材5は、その内側に微小電子機械機構9を収めるような枠状の形状および寸法で形成され、電子部品11の微小電子機械機構9をその内側に気密封止するための側壁として機能する。   The sealing material 5 is formed in a frame shape and size so as to accommodate the micro electro mechanical mechanism 9 inside thereof, and functions as a side wall for hermetically sealing the micro electro mechanical mechanism 9 of the electronic component 11 inside thereof. To do.

封止材5は、錫−銀系,錫−銀−銅系等の半田、金−錫ろう等の低融点ろう材、銀−ゲルマニウム系等の高融点ろう材のような接合部材として知られる金属材料で形成される。   The sealing material 5 is known as a joining member such as a solder such as tin-silver, tin-silver-copper, a low melting point brazing material such as gold-tin brazing, and a high melting point brazing material such as silver-germanium. It is made of a metal material.

また、例えば、鉄−ニッケル−コバルト合金や鉄−ニッケル合金等の鉄−ニッケル系合金,無酸素銅,アルミニウム,ステンレス鋼,銅−タングステン合金,銅−モリブデン合金等の金属材料、あるいは酸化アルミニウム質焼結体やガラスセラミックス焼結体等の無機系材料にAu,Ag,Cu,Al,Pt,Pd等の金属層をめっき法等で形成した導電性被膜等を形成したものに、錫−銀系,錫−銀−銅系等の半田を塗布したものを使用することもできる。   Further, for example, iron-nickel alloys such as iron-nickel-cobalt alloy and iron-nickel alloy, metal materials such as oxygen-free copper, aluminum, stainless steel, copper-tungsten alloy, copper-molybdenum alloy, or aluminum oxide Tin-silver is formed by forming a conductive film or the like formed by plating a metal layer such as Au, Ag, Cu, Al, Pt, or Pd on an inorganic material such as a sintered body or a glass ceramic sintered body. It is also possible to use those coated with a solder such as a tin-silver-copper type.

封止材5は、例えば、錫−銀系の半田等の接合部材からなる場合であれば、封止材用パターン3aを介して半田を絶縁基板1の上面の所定位置に所定の高さ(例えば微小電子機械機構9以上の高さ)になるようにして接合することにより、絶縁基板1の上面に形成される。   If the sealing material 5 is made of, for example, a joining member such as tin-silver solder, the solder is placed at a predetermined height on the upper surface of the insulating substrate 1 through the sealing material pattern 3a ( For example, it is formed on the upper surface of the insulating substrate 1 by bonding so that the height is equal to or higher than the micro electro mechanical mechanism 9.

封止材用パターン3aは、上記の半田やろう材との濡れ性の良い金属材料、例えば、少なくとも最表面が金で形成されているメタライズ層やめっき層等により形成される。   The sealing material pattern 3a is formed of a metal material having good wettability with the solder or brazing material, for example, a metallized layer or a plating layer having at least the outermost surface formed of gold.

封止材用パターン3aは、例えば、タングステンのメタライズ層にニッケルおよび金の各めっき層が順次被着されたものであれば、次のようにして形成することができる。まず、タングステンの粉末に適当な有機溶剤およびバインダを添加混練して金属ペーストを作製し、これを絶縁基板1となるセラミックグリーンシートにスクリーン印刷法により所定の枠状等のパターンに印刷するとともに焼成して、タングステンのメタライズ層を形成する。次に、タングステンのメタライズ層に、電解ニッケルめっき浴(Watt浴など)や電解金めっき浴(Rinker浴など)を用いた電解めっき法により順次ニッケルおよび金めっき層を被着させる。また、外部からの電気を用いずにめっき層を被着形成できる無電解めっき法を用いてもよい。   The encapsulant pattern 3a can be formed as follows if, for example, nickel and gold plating layers are sequentially deposited on a tungsten metallization layer. First, a metal paste is prepared by adding and kneading an appropriate organic solvent and binder to tungsten powder, and this is printed on a ceramic green sheet to be an insulating substrate 1 in a predetermined frame-like pattern and fired by screen printing. Then, a tungsten metallization layer is formed. Next, the nickel and gold plating layers are sequentially deposited on the tungsten metallized layer by an electrolytic plating method using an electrolytic nickel plating bath (such as a Watt bath) or an electrolytic gold plating bath (such as a Rinker bath). Moreover, you may use the electroless-plating method which can deposit and form a plating layer, without using the electricity from the outside.

この封止材5(枠部材)の絶縁基板1に接合されているのと反対側の主面(図1の例では上面)を電子部品11の下面に接合させることにより、封止材5の内側に微小電子機械機構9が気密封止され、電子部品封止用基板7に電子部品封止領域が形成される。この場合、半導体基板8が底板となり、絶縁基板1が蓋体となる。   By bonding the main surface (upper surface in the example of FIG. 1) opposite to the insulating substrate 1 of the sealing material 5 (frame member) to the lower surface of the electronic component 11, The micro electronic mechanical mechanism 9 is hermetically sealed inside, and an electronic component sealing region is formed on the electronic component sealing substrate 7. In this case, the semiconductor substrate 8 serves as a bottom plate and the insulating substrate 1 serves as a lid.

なお、封止材5が、鉄−ニッケル−コバルト合金等の、接合部材以外の材料から成る場合は、封止材5を絶縁基板1の上面や電子部品11の半導体基板8の下面に接合する方法としては、例えば錫−銀系等の半田,金−錫ろう等の低融点ろう材,銀−ゲルマニウム系等の高融点ろう材の接合材を介して、枠状に成形された鉄−ニッケル−コバルト合金等の部材を封止材用パターン3aに接合する等の方法を用いることができる。この封止材5の枠状への成形は、例えばエッチングや打ち抜き等の金属加工手段を用いることができる。   When the sealing material 5 is made of a material other than a joining member such as an iron-nickel-cobalt alloy, the sealing material 5 is joined to the upper surface of the insulating substrate 1 or the lower surface of the semiconductor substrate 8 of the electronic component 11. As a method, for example, iron-nickel formed into a frame shape through a solder of a tin-silver type solder, a low melting point brazing material such as gold-tin brazing, or a high melting point brazing material such as silver-germanium type. A method such as joining a member such as a cobalt alloy to the sealing material pattern 3a can be used. For forming the sealing material 5 into a frame shape, for example, metal processing means such as etching or punching can be used.

絶縁基板1の上面(微小電子機械機構9を封止する側)からは、下面または側面に配線導体2が導出されている。また、絶縁基板1の上面の外周部には、封止材用パターン3aの内側に、配線導体2と接続された接続パッド3が形成されている。これらの配線導体2および接続パッド3は、接続パッド3上に形成される接続端子4を介して電子部品11の電極10と電気的に接続され、これを絶縁基板1の下面や側面に導出する機能を有する。   From the upper surface of the insulating substrate 1 (the side on which the micro electro mechanical mechanism 9 is sealed), the wiring conductor 2 is led out to the lower surface or the side surface. A connection pad 3 connected to the wiring conductor 2 is formed inside the sealing material pattern 3 a on the outer peripheral portion of the upper surface of the insulating substrate 1. The wiring conductor 2 and the connection pad 3 are electrically connected to the electrode 10 of the electronic component 11 through the connection terminal 4 formed on the connection pad 3, and this is led out to the lower surface and the side surface of the insulating substrate 1. It has a function.

これら配線導体2、接続パッド3は、銅,銀,金,パラジウム,タングステン,モリブデン,マンガン等の金属材料により形成される。   These wiring conductors 2 and connection pads 3 are formed of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, or manganese.

これらの形成手段としては、例えば、配線導体2および接続パッド3が銅メタライズである場合、銅粉末およびガラス粉末に適当な有機バインダ,溶剤を添加混合した金属ペーストを、絶縁基板1となるグリーンシートにスクリーン印刷等により印刷してこれをグリーンシートとともに焼成すること、等の手段が挙げられる。   As these forming means, for example, when the wiring conductor 2 and the connection pad 3 are made of copper metallization, a metal paste obtained by adding an appropriate organic binder and solvent to copper powder and glass powder is mixed with a green sheet that becomes the insulating substrate 1. And printing by screen printing or the like and firing this together with a green sheet.

接続端子4は、錫−銀系,錫−銀−銅系等の半田、金−錫ろう等の低融点ろう材、銀−ゲルマニウム系等の高融点ろう材のような金属材料等により形成されている。   The connection terminal 4 is made of a metal material such as a tin-silver solder, a tin-silver-copper solder, a low melting solder such as gold-tin solder, or a high melting solder such as silver-germanium. ing.

接続端子4は、封止材5が錫−銀系,錫−銀−銅系等の半田、金−錫ろう等の低融点ろう材、銀−ゲルマニウム系等の高融点ろう材のような金属材料等で形成されている場合には封止材5とともに一括形成してもよい。   The connection terminal 4 is made of a metal such as a tin-silver solder, tin-silver-copper solder or the like, a low melting solder such as gold-tin solder, or a high melting solder such as silver-germanium. When formed of a material or the like, it may be formed together with the sealing material 5.

この接続端子4を電子部品11の電極10に接合することにより、電子部品11の電極10が、接続端子4,接続パッド3および配線導体2を介して、絶縁基板1の下面または側面に導出される。   By joining the connection terminal 4 to the electrode 10 of the electronic component 11, the electrode 10 of the electronic component 11 is led to the lower surface or side surface of the insulating substrate 1 through the connection terminal 4, the connection pad 3 and the wiring conductor 2. The

そして、この下面に導出された配線導体2の端部には実装パッド6が形成され、この実装パッド6を外部電気回路基板(図示せず)の外部電気回路に錫−鉛半田等からなる半田バンプなどの外部端子を介して接合することにより、電子部品11の電極10が外部電気回路と電気的に接続される。   A mounting pad 6 is formed at the end of the wiring conductor 2 led out to the lower surface, and the mounting pad 6 is soldered to an external electric circuit of an external electric circuit board (not shown) made of tin-lead solder or the like. The electrodes 10 of the electronic component 11 are electrically connected to an external electric circuit by bonding via external terminals such as bumps.

外部電気回路と電子装置12との接続を半田バンプなどの外部端子を用いて接続する場合には、電子部品11と電子部品封止用基板7との接合温度以下で行なうことが電子部品11と電子部品封止用基板7との接続信頼性を確保する観点で望ましい。   When the connection between the external electric circuit and the electronic device 12 is performed using an external terminal such as a solder bump, the electronic component 11 and the electronic component 11 can be connected at or below the bonding temperature between the electronic component 11 and the electronic component sealing substrate 7. This is desirable from the viewpoint of ensuring connection reliability with the electronic component sealing substrate 7.

実装パッド6は、上記の接続パッド3と同様に、銅,銀,金,パラジウム,タングステン,モリブデン,マンガン等の金属材料により形成され、その形成手段としては、例えば、実装パッド6が銅メタライズである場合であれば、銅粉末およびガラス粉末に適当な有機バインダ,溶剤を添加混合した実装パッド用ペーストを、絶縁基板1となるグリーンシートにスクリーン印刷等により印刷して、これをグリーンシートとともに焼成することにより形成される。   The mounting pad 6 is formed of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, manganese, etc., as with the connection pad 3 described above. For example, the mounting pad 6 is made of copper metallization. In some cases, a paste for a mounting pad in which an appropriate organic binder and solvent are added and mixed with copper powder and glass powder is printed on the green sheet to be the insulating substrate 1 by screen printing or the like, and this is baked together with the green sheet. It is formed by doing.

ここで、この第1の構成において、電子装置12は、図2に示すように、実装パッド6が配置された実装領域が、平面視で封止材5の内側の電子部品封止領域の中心を通る区分直線によって電子部品封止領域を4等分した4つの区分領域(一点鎖線で示す)のうち3つ以下の区分領域に対向する領域に配置されていることが重要である。   Here, in the first configuration, as shown in FIG. 2, the electronic device 12 has a mounting region in which the mounting pads 6 are disposed, the center of the electronic component sealing region inside the sealing material 5 in a plan view. It is important that the electronic component sealing area is divided into four equal parts by a section straight line passing through and is disposed in an area facing three or less section areas (indicated by a one-dot chain line).

図2は、本発明の第1の構成の電子装置12について、その実施の形態の一例を示す平面図であり、電子部品封止用基板7の実装パッド6が形成された側の面(図1における下面に相当)を示したものである。なお、図2において図1と同じ部位には同じ符号を付してある。ただし、図2は、本発明の構成をわかりやすくするために簡略化し、区分領域と実装領域(実装パッド6が配置された領域)とを主として描いた図であり、微小電子機械機構9等は省略している。また、封止材5は透視した状態で示している。   FIG. 2 is a plan view showing an example of an embodiment of the electronic device 12 having the first configuration according to the present invention. The surface of the electronic component sealing substrate 7 on which the mounting pads 6 are formed (FIG. 2). 1 corresponds to the lower surface in FIG. In FIG. 2, the same parts as those in FIG. However, FIG. 2 is simplified to make the configuration of the present invention easy to understand, and mainly shows a partition region and a mounting region (a region where the mounting pads 6 are arranged). Omitted. Moreover, the sealing material 5 is shown in a transparent state.

このように、4つの区分領域のうち3つ以下の区分領域に対向する領域に実装領域を配置することにより、電子部品封止用基板7のうち実装パッド6を介して外部電気回路基板と機械的に接続されない部位では応力が生じないので、少なくとも1つの区分領域において電子部品封止用基板7に作用する応力を低く抑えることができる。このような区分領域(低応力部)では歪みも小さいので、電子部品封止用基板7と封止材5を介して機械的に接続されている半導体基板8にも歪みの小さい領域を、少なくとも一つの区分領域に対向する領域で形成することができる。   As described above, by disposing the mounting area in the area facing three or less of the four divided areas, the external electric circuit board and the machine are arranged via the mounting pad 6 in the electronic component sealing substrate 7. Since the stress is not generated at the part that is not connected to the electronic component, the stress acting on the electronic component sealing substrate 7 in at least one of the divided regions can be kept low. Since such a segmented region (low-stressed portion) has a small distortion, at least a region having a small strain is also present in the semiconductor substrate 8 mechanically connected to the electronic component sealing substrate 7 via the sealing material 5. It can be formed in a region facing one segmented region.

詳細には、熱膨張係数の差に起因する応力によって電子部品封止用基板7が変形することで電子部品11の半導体基板8に発生する応力は、実装領域と対向する電子部品11の領域で高く、実装領域と対向する電子部品11の領域から離れた部位で低くなる。そのため、少なくとも1つの区分領域と平面視で対向する領域において半導体基板8に低応力部を形成することができるとともに、微小電子機械機構9はこの低応力部に形成することができるので、例えば、振動部(図示せず)を備える微小電子機械機構9にその応力に起因して歪みが生じることは効果的に防止され、微小電子機械機構9の駆動精度を高くすることができる。   Specifically, the stress generated in the semiconductor substrate 8 of the electronic component 11 due to the deformation of the electronic component sealing substrate 7 due to the stress caused by the difference in thermal expansion coefficient is in the region of the electronic component 11 facing the mounting region. It is high and becomes low at a part away from the region of the electronic component 11 facing the mounting region. Therefore, a low stress portion can be formed in the semiconductor substrate 8 in a region facing at least one segmented region in plan view, and the microelectromechanical mechanism 9 can be formed in this low stress portion. Distortion due to the stress is effectively prevented from occurring in the micro electromechanical mechanism 9 including the vibrating portion (not shown), and the driving accuracy of the micro electromechanical mechanism 9 can be increased.

図2に示す例は、絶縁基板1の下面のうち、2つの区分領域に対向する領域に、それぞれ実装パッド6を形成して実装領域を配置させた例である。この場合、電子部品封止用基板7の下面には、それぞれ2個の実装パッド6が配置された実装領域に対向する2つの区分領域K1と、実装パッド6が配置されていない2つの区分領域K2とが存在する。この実装パッド6が配置されていない2つの区分領域K2に対向する半導体基板8の領域は、歪みの小さな低応力部となる。この低応力部に微小電子機械機構9(図2では図示せず)を形成しておくと、微小電子機械機構9に熱膨張係数の差による応力等に起因する歪みが生じることが効果的に防止され、微小電子機械機構9の駆動精度を高くすることができる。この例であれば、絶縁基板1(特に電子部品封止領域)の平面視した面積のうち、約1/2の領域に対向する領域において、半導体基板8に微小電子機械機構9を形成することができる。   The example shown in FIG. 2 is an example in which the mounting regions are arranged by forming the mounting pads 6 in the regions facing the two divided regions on the lower surface of the insulating substrate 1. In this case, on the lower surface of the electronic component sealing substrate 7, there are two partitioned regions K1 facing the mounting region where the two mounting pads 6 are disposed, and two partitioned regions where the mounting pads 6 are not disposed. K2 exists. A region of the semiconductor substrate 8 facing the two divided regions K2 where the mounting pads 6 are not disposed becomes a low-stress portion with small distortion. If the micro electro mechanical mechanism 9 (not shown in FIG. 2) is formed in the low stress portion, it is effective that the micro electro mechanical mechanism 9 is distorted due to stress due to a difference in thermal expansion coefficient. Thus, the driving accuracy of the micro electro mechanical mechanism 9 can be increased. In this example, the microelectromechanical mechanism 9 is formed on the semiconductor substrate 8 in a region facing about a half of the area of the insulating substrate 1 (particularly the electronic component sealing region) in plan view. Can do.

なお、実装パッド6は、電子装置12の実装のため最低1個は必要であり、区分領域のうち少なくとも1つに対向する領域に実装パッド6が配置されることになる。   Note that at least one mounting pad 6 is necessary for mounting the electronic device 12, and the mounting pad 6 is disposed in a region facing at least one of the divided regions.

4つの区分領域に対向する領域のうちいくつの領域にどのように実装パッド6を配置するかについては、微小電子機械機構9の形状や寸法、機能、および電子部品11の平面寸法や外部電気回路基板に対する傾き等に応じて適宜調整する。これらの配置については、後に具体例を挙げて説明する。   How and how many mounting pads 6 are arranged in the area facing the four segmented areas is determined by the shape, dimensions, and functions of the microelectromechanical mechanism 9, the planar dimensions of the electronic component 11, and the external electric circuit. It adjusts suitably according to the inclination etc. with respect to a board | substrate. These arrangements will be described later with specific examples.

(第2の構成)
また、本発明の電子装置は、その第2の構成において、図3に示すように、平面視で封止材5の内側の電子部品封止領域の中心から外周に向かって伸び、電子部品封止領域を4等分する4つの区分半直線(一点鎖線で示す)のうち3つ以下の区分半直線に対向する線に沿って配置されていることが重要である。
(Second configuration)
In the second configuration, the electronic device of the present invention extends from the center of the electronic component sealing region inside the sealing material 5 toward the outer periphery in a plan view, as shown in FIG. It is important that four stop half lines (indicated by alternate long and short dash lines) that divide the stop region into four equal parts are arranged along a line that faces three or less stop half lines.

この第2の構成の電子装置12は、実装領域の配置を、上記区分半直線に対向する線に沿って行なわせるようにした点が第1の構成の電子装置12と異なり、他の部位やその機能については第1の構成の場合と同様である。   Unlike the electronic device 12 of the first configuration, the electronic device 12 of the second configuration differs from the electronic device 12 of the first configuration in that the mounting area is arranged along a line facing the section half line. Its function is the same as that of the first configuration.

図3は、本発明の第2の構成の電子装置12について、その実施の形態の一例を示す平面図であり、電子部品封止用基板7の実装パッド6が形成された側の面(図1における下面)を示したものである。なお、図3において図1および図2と同じ部位には同じ符号を付してある。ただし、図3は、図1に示す電子装置12に対応した平面図ではなく、図2と同様に、本発明の構成をわかりやすくするために簡略化したものである。   FIG. 3 is a plan view showing an example of an embodiment of the electronic device 12 having the second configuration according to the present invention. The surface of the electronic component sealing substrate 7 on the side where the mounting pads 6 are formed (FIG. 3). The lower surface in FIG. In FIG. 3, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals. However, FIG. 3 is not a plan view corresponding to the electronic device 12 shown in FIG. 1, but is simplified for easy understanding of the configuration of the present invention, as in FIG.

このように、4つの区分半直線のうち3つ以下の区分半直線に対向する線に沿って実装領域を配置することにより、電子部品封止用基板7のうち実装パッド6を介して外部電気回路基板と機械的に接続されない部位では応力が生じないので、少なくとも1つの区分半直線に沿った、区分半直線を含む領域において、電子部品封止用基板7に作用する応力を低く抑えることができる。このような区分半直線を含む領域(低応力部)では歪みも小さいので、電子部品封止用基板7と封止材5を介して機械的に接続されている半導体基板8にも歪みの小さい領域を、少なくとも一つの区分半直線を含む領域に対向する領域で形成することができる。   As described above, by disposing the mounting region along the line that opposes three or less of the four segment half-lines, the external electric field is provided via the mounting pad 6 of the electronic component sealing substrate 7. Since no stress is generated in a portion that is not mechanically connected to the circuit board, the stress acting on the electronic component sealing substrate 7 can be kept low in a region including the segment half line along at least one segment half line. it can. In such a region including the segmented half line (low stress portion), the distortion is small, and the distortion is also small in the semiconductor substrate 8 mechanically connected to the electronic component sealing substrate 7 via the sealing material 5. The region can be formed by a region facing the region including at least one segmented half line.

このように、少なくとも1つの区分半直線を含む領域と平面視で対向する領域において半導体基板8に低応力部を形成することができるとともに、微小電子機械機構9はこの低応力部に形成することができるので、例えば振動部を備える微小電子機械機構9にその応力に起因して歪みや変形が生じることは効果的に防止され、微小電子機械機構9の駆動精度を高くすることができる。   As described above, a low stress portion can be formed in the semiconductor substrate 8 in a region facing the region including at least one section half-line in plan view, and the micro electromechanical mechanism 9 is formed in the low stress portion. Therefore, for example, distortion and deformation caused by the stress in the micro electro mechanical mechanism 9 including the vibrating portion can be effectively prevented, and the driving accuracy of the micro electro mechanical mechanism 9 can be increased.

さらに、微小電子機械機構9が、一対の柱状の支持部(図示せず)の先端間に梁状の振動部(図示せず)を配置したものであるような場合には、次のような効果を得ることもできる。   Further, in the case where the micro electro mechanical mechanism 9 is such that a beam-like vibration part (not shown) is arranged between the tips of a pair of columnar support parts (not shown), the following An effect can also be obtained.

実装領域を区分半直線に沿って配置した場合には、この実装領域に対向する領域を跨ぐように、すなわち、絶縁基板1と半導体基板8との間に生じる応力が実装パッド6を介して絶縁基板1に伝わり高い応力が作用しやすい領域(高応力部)を避けて微小機械電子機構9の支持部を配置することができる。つまり、機械的な破壊が生じやすい支持部を低応力部に形成することができ、例えば、いわゆる両持ち梁構造(一対の支持部の間で梁状の振動部を支持する構造)の微小電子機械機構9の設計の自由度を高くすることもできる。   When the mounting area is arranged along the segmented half line, the stress generated between the insulating substrate 1 and the semiconductor substrate 8 is insulated via the mounting pad 6 so as to straddle the area facing the mounting area. The support portion of the micromechanical electronic mechanism 9 can be disposed avoiding a region (high stress portion) where high stress is easily transmitted to the substrate 1. In other words, a support portion that is susceptible to mechanical breakage can be formed in a low-stress portion. For example, microelectrons having a so-called doubly supported beam structure (a structure that supports a beam-like vibrating portion between a pair of support portions). The degree of freedom in designing the mechanical mechanism 9 can also be increased.

図3は、4つの区分半直線のうち一直線状に連なる2つの区分半直線に対向する線に沿って一列に実装領域が配置されている場合を示す。   FIG. 3 shows a case where the mounting regions are arranged in a line along a line facing two divided half lines that are connected in a straight line among the four divided half lines.

この場合、電子部品封止用基板7の下面には、それぞれ2個の実装パッド6が配置されてなる2つの実装領域が配置された、一直線状に連なる2つの区分半直線H1と、それに直交する、実装パッド6が配置されていない2つの区分半直線H2とが存在する。半導体基板8の、この実装パッド6が配置されている2つの区分半直線に対向する線状の領域以外の領域は、歪みの小さな低応力部となる。したがって、この低応力部に微小電子機械機構9を形成しておくと、熱膨張係数の差による応力等に起因する微小電子機械機構9に歪みが生じることが効果的に防止され、微小電子機械機構9の駆動精度を高くすることができる。   In this case, on the lower surface of the electronic component sealing substrate 7, two mounting areas each having two mounting pads 6 are arranged, two segmented half straight lines H1 connected in a straight line, and orthogonal thereto. There are two segmented half-lines H2 where the mounting pads 6 are not arranged. A region of the semiconductor substrate 8 other than the linear region facing the two segmented half-lines on which the mounting pads 6 are arranged is a low-stress portion with small distortion. Therefore, if the micro electro mechanical mechanism 9 is formed in the low stress portion, the micro electro mechanical mechanism 9 is effectively prevented from being distorted due to stress caused by the difference in thermal expansion coefficient. The driving accuracy of the mechanism 9 can be increased.

図3の例であれば、実装領域が配置された区分半直線H1に対向する線状の領域を跨ぐように、例えば、2点の支持部で支持された梁状の振動部を有する両持ち梁構造の微小電子機械機構9を形成すれば、両持ち梁構造の微小電子機械機構9の支持部はそれぞれ低応力部に位置させることができる。そのため、支持部に歪みが生じることは効果的に防止され、電子装置12が加熱、冷却された際においても駆動精度を高くすることができる。また、上記の実装パッド6が配置されていない区分半直線H2を含む領域に対向する半導体基板8の領域内に2点の支持部を形成することも可能であるため、微小電子機械機構9の配置位置等の設計の自由度が高くなる。   In the case of the example in FIG. 3, for example, both ends having a beam-like vibrating portion supported by two support portions so as to straddle a linear region facing the section half line H <b> 1 where the mounting region is arranged. If the microelectromechanical mechanism 9 having a beam structure is formed, the support portions of the microelectromechanical mechanism 9 having a double-supported beam structure can be positioned at low stress portions, respectively. Therefore, it is possible to effectively prevent the support portion from being distorted, and the driving accuracy can be increased even when the electronic device 12 is heated and cooled. In addition, since it is possible to form two support portions in the region of the semiconductor substrate 8 facing the region including the segmented half line H2 where the mounting pads 6 are not disposed, the micro electro mechanical mechanism 9 The degree of freedom in designing the arrangement position and the like is increased.

なお、本発明の電子装置12は、図2および図3に示した実施の形態の例に限られるものではない。図4および図5に、本発明の電子装置12の実施の形態の他の例を示す。   The electronic device 12 of the present invention is not limited to the example of the embodiment shown in FIGS. 4 and 5 show another example of the embodiment of the electronic device 12 of the present invention.

図4は、図2と同様に本発明の第1の構成について、実施の形態の他の例を示す平面図であり、4個または6個の実装パッド6を配置した例である。ここで図4(a)は実装領域を区分直線によって電子部品封止領域を4等分した4つの区分領域のうち1つの区分領域に対向する領域に配置したもの、(b)は2つの区分領域に対向する領域に配置したもの、(c)は3つの区分領域に対向する領域に配置したものの例である。   FIG. 4 is a plan view showing another example of the embodiment of the first configuration of the present invention similarly to FIG. 2, and is an example in which four or six mounting pads 6 are arranged. Here, FIG. 4A shows a mounting area arranged in an area facing one of the four divided areas obtained by dividing the electronic component sealing area into four equal parts by a straight line, and FIG. 4B shows two divided areas. (C) is an example of what is arrange | positioned in the area | region which opposes an area | region, and is arrange | positioned in the area | region which opposes three division areas.

図4(a)に示したように、実装領域を、区分直線によって電子部品封止領域を4等分した4つの区分領域のうち1つの区分領域に対向する領域に配置したものは、半導体基板8に最も広い範囲で低応力部を形成することができる。したがって、微小電子機械機構9を形成する際の設計の自由度が高く、大型の微小電子機械機構9を形成する場合などに特に好ましい。   As shown in FIG. 4A, the mounting region is arranged in a region facing one of the four divided regions obtained by equally dividing the electronic component sealing region into four by a divided straight line. 8 can form a low stress portion in the widest range. Therefore, the degree of freedom in design when forming the micro electro mechanical mechanism 9 is high, which is particularly preferable when the large micro electro mechanical mechanism 9 is formed.

さらに、熱膨張係数の差に起因する応力によって電子部品封止用基板7が変形することで電子部品11の半導体基板8に発生する応力は、実装領域と対向する電子部品11の領域で高く、実装領域と対向する電子部11の領域から離れた部位で低くなることから、対向する実装領域と最も離れた電子部品11の領域(図4(a)では、左上の実装領域と対角の位置にある右下の領域)は、応力が一層低い領域となるので、特に高い駆動精度を要求される微小電子機械機構9や、寸法がより小さく繊細な微小電子機械機構9などを形成する場合などに好ましい。   Further, the stress generated in the semiconductor substrate 8 of the electronic component 11 due to the deformation of the electronic component sealing substrate 7 due to the stress caused by the difference in thermal expansion coefficient is high in the region of the electronic component 11 facing the mounting region, Since the height is lowered at a position away from the area of the electronic unit 11 facing the mounting area, the position of the electronic component 11 farthest from the facing mounting area (in FIG. In the lower right area), the stress is a lower area, so that the micro electro mechanical mechanism 9 requiring particularly high driving accuracy, the fine micro electro mechanical mechanism 9 having a smaller size, and the like are formed. Is preferred.

図4(b)は、図2に示した例と同様に、区分直線によって電子部品封止領域を4等分した4つの区分領域のうち2つの区分領域に対向する領域に配置した例の他の例である。このように実装パッド6は電子部品封止領域の外周部に沿って形成するようにすると、外部電気回路基板の外部電気回路と接続する際の自由度が高く、配線の展開が容易となるので好ましい。   FIG. 4B shows another example in which the electronic component sealing area is divided into four equal areas by dividing straight lines and is arranged in an area facing two divided areas, as in the example shown in FIG. It is an example. When the mounting pad 6 is formed along the outer peripheral portion of the electronic component sealing region in this way, the degree of freedom in connecting to the external electric circuit of the external electric circuit board is high, and the development of the wiring becomes easy. preferable.

図4(c)に示したように、実装領域を、区分直線によって電子部品封止領域を4等分した4つの区分領域のうち3つの区分領域に対向する領域に配置したものは、実装パッド6を最も多く配置することが可能となる。したがって、微小電子機械機構9の構造がより高度に機能化され、例えば、複数の微小電子機械機構9を搭載する際のように、外部電気回路と接続するための配線導体2の数が増加したような場合に好ましい。また、実装パッド6の設計の自由度が高いため、例えば、電子装置12の外形形状や寸法、厚さ(重さ)等に応じて、電子装置12を傾かせないように実装パッド6を配置することがより容易に行なえるので、電子装置12と外部電気回路基板との平行度を確保することが容易である。さらに、実装パッド6が多く形成されると、電子装置12と外部電気回路基板との接合強度が増加し、落下等の衝撃に対する信頼性を高いものとすることもできる。   As shown in FIG. 4C, the mounting area is arranged in an area facing the three divided areas among the four divided areas obtained by dividing the electronic component sealing area into four equal parts by dividing straight lines. 6 can be arranged most. Therefore, the structure of the micro electro mechanical mechanism 9 is highly functionalized, and the number of wiring conductors 2 for connecting to an external electric circuit is increased, for example, when a plurality of micro electro mechanical mechanisms 9 are mounted. It is preferable in such a case. Further, since the mounting pad 6 has a high degree of freedom in designing, the mounting pad 6 is arranged so as not to tilt the electronic device 12 according to the outer shape, dimensions, thickness (weight), etc. of the electronic device 12, for example. Therefore, it is easy to ensure parallelism between the electronic device 12 and the external electric circuit board. Further, when a large number of mounting pads 6 are formed, the bonding strength between the electronic device 12 and the external electric circuit board increases, and the reliability against impacts such as dropping can be increased.

図5は、図3と同様に、本発明の第2の構成について、実施の形態の他の例を示す平面図であり、4個または6個の実装パッド6を配置した例である。ここで図5(a)は電子部品封止領域を4等分する4つの区分半直線のうち1つの区分半直線に対向する線に沿って配置したもの、(b)は2つの区分半直線に対向する線に沿って配置したもの、(c)は3つの区分半直線に対向する線に沿って配置したものの例である。   FIG. 5 is a plan view showing another example of the embodiment of the second configuration of the present invention, similarly to FIG. 3, and is an example in which four or six mounting pads 6 are arranged. Here, FIG. 5 (a) is arranged along a line facing one section half line out of four section half lines dividing the electronic component sealing region into four equal parts, and (b) is two section half lines. (C) is an example of what is arrange | positioned along the line which opposes three division half-lines.

図5(a)、(b)、(c)のそれぞれの場合において、上記の図4(a)、(b)、(c)のそれぞれと同様な作用効果を得ることができる。   In each case of FIGS. 5A, 5B, and 5C, the same effects as those of FIGS. 4A, 4B, and 4C can be obtained.

さらに、これらのように区分半直線に沿って実装領域を形成した場合には、例えば微小電子機械機構9が上記両持ち梁構造の場合に、次のような利点がある。すなわち、この実装領域に対向する領域を跨ぐように微小電子機械機構9を形成することが可能であり、設計の自由度が高く、種々の用途や機能を有した電子装置12とすることができる。   Further, when the mounting region is formed along the segmented half line as described above, for example, when the micro electro mechanical mechanism 9 has the above-mentioned double-supported beam structure, there are the following advantages. That is, the microelectromechanical mechanism 9 can be formed so as to straddle the region facing the mounting region, and the electronic device 12 having a high degree of design freedom and various applications and functions can be obtained. .

なお、特に図示していないが、電子部品封止用基板7の実装パッド6が配置された下面には、電子部品封止用基板7と外部電気回路基板の間隔を一定とするための凸部を設けていることが好ましい。凸部は、例えば、電子装置12の実装パッド6を外部電気回路基板に接合する外部端子と下端面が同じ高さになるようにして絶縁基板1に取着、または絶縁基板1と一体的に形成された部材である。凸部は、例えば、絶縁基板1の下面のうち実装パッド6が配置されない部位に設けられ、電子装置12の下面と外部電気回路基板の上面との間の間隔を一定に保持するスペーサとして機能する。このような凸部を設けることで、電子装置12を外部電気回路基板に実装する際に電子装置12と外部電気回路基板との平行を容易に保つことができる。
Although not particularly illustrated, a convex portion for making the interval between the electronic component sealing substrate 7 and the external electric circuit substrate constant on the lower surface of the electronic component sealing substrate 7 on which the mounting pads 6 are arranged. Is preferably provided. For example, the protrusion is attached to the insulating substrate 1 so that the lower surface of the external terminal for joining the mounting pad 6 of the electronic device 12 to the external electric circuit substrate is the same height, or is integrated with the insulating substrate 1. It is a formed member. For example, the convex portion is provided in a portion of the lower surface of the insulating substrate 1 where the mounting pad 6 is not disposed, and functions as a spacer that keeps a constant distance between the lower surface of the electronic device 12 and the upper surface of the external electric circuit substrate. . By providing such a convex portion, when the electronic device 12 is mounted on the external electric circuit board, the electronic device 12 and the external electric circuit board can be easily kept parallel.

この場合、実装パッド6が配置されない、実装領域以外の領域に凸部を設けると、凸部で電子装置を支えることができるので、電子装置12の外部電気回路基板との平行を保つ上で効果的である。ただし、実装領域以外において、凸部は、外部電気回路基板に対して接合しないようにしておく必要がある。凸部を外部電気回路基板に接合してしまうと、凸部を介して電子装置12の絶縁基板1に熱応力が加わり、従来の技術と同様に、微小電子機械機構9の歪み等の不具合を誘発するおそれがある。   In this case, if the convex portion is provided in a region other than the mounting region where the mounting pad 6 is not disposed, the electronic device can be supported by the convex portion, which is effective in keeping the electronic device 12 parallel to the external electric circuit board. Is. However, it is necessary to prevent the convex portion from being bonded to the external electric circuit board outside the mounting area. If the convex portion is bonded to the external electric circuit board, thermal stress is applied to the insulating substrate 1 of the electronic device 12 through the convex portion, which causes problems such as distortion of the microelectromechanical mechanism 9 as in the conventional technique. There is a risk of triggering.

さらに、例えば、実装パッド6の近くに、外部端子よりも弾性率(ヤング率)の低い材料からなる凸部を設けておくと、外部電気回路基板に実装した後に電子装置12に外力が加わった場合において、凸部と電子装置12の絶縁基板1との界面にも応力が分散されるとともに、その応力を凸部の変形により効果的に緩和することができるので、実装パッド6に応力が集中し、ここを起点として破壊が生じることなどを抑制することができる。   Further, for example, if a convex portion made of a material having a lower elastic modulus (Young's modulus) than the external terminal is provided near the mounting pad 6, an external force is applied to the electronic device 12 after being mounted on the external electric circuit board. In some cases, the stress is distributed to the interface between the convex portion and the insulating substrate 1 of the electronic device 12 and the stress can be effectively relieved by deformation of the convex portion, so that the stress is concentrated on the mounting pad 6. Then, it is possible to suppress the occurrence of destruction from this point.

このような凸部は、外部電気回路と接合されず、かつ、半田バンプなどの外部端子の高さと同じまたは低いものであれば、セラミック材料,金属材料,樹脂材料など種々の部材を用いることができる。例えば、セラミック材料から成る絶縁基板1を形成する際に一括して凸部を形成したり、高融点半田から成る半田ボール等を用いて電子部品封止用基板7に予め凸部となる半田バンプを形成した後に外部端子となる半田バンプを形成するなどすれば、凸部を形成するための工程を別途必要とせずに容易に形成することができる。また、シリコーン等の弾性率が低い樹脂材料を用いて凸部を形成した場合には、電子装置12に外力が加わった際に発生する応力を効果的に緩和することができ、機械的信頼性をより高くすることもできる。なお、この凸部は、上述したように実装パッド6の配置等に応じた所望の位置(実装パッド6が配置されていない領域や実装パッドに隣接する部位等)に形成すればよい。すなわち、例えば、実装パッド6の数が少ない場合に電子装置12と外部電気回路基板との平行を保つことを重視するようなときには、実装領域以外の領域に、外部電気回路基板に対して接合されない凸部を設ければよく、実装パッド6の破壊を防止することを重視するようなときには、実装パッド6の近くに低弾性の実装パッド6を設ければよい。   If such a convex portion is not bonded to an external electric circuit and is the same as or lower than the height of an external terminal such as a solder bump, various members such as a ceramic material, a metal material, and a resin material can be used. it can. For example, when forming the insulating substrate 1 made of a ceramic material, the bumps are formed in a lump, or solder bumps that become the protrusions in advance on the electronic component sealing substrate 7 using solder balls made of high melting point solder or the like. If a solder bump to be an external terminal is formed after forming the film, it can be easily formed without requiring a separate process for forming the convex portion. Further, when the convex portion is formed using a resin material having a low elastic modulus such as silicone, the stress generated when an external force is applied to the electronic device 12 can be effectively relieved, and the mechanical reliability can be reduced. Can be made higher. In addition, what is necessary is just to form this convex part in the desired positions (The area | region where the mounting pad 6 is not arrange | positioned, a site | part adjacent to a mounting pad, etc.) according to arrangement | positioning of the mounting pad 6, etc. as mentioned above. That is, for example, when it is important to keep the electronic device 12 parallel to the external electric circuit board when the number of the mounting pads 6 is small, it is not bonded to the external electric circuit board in an area other than the mounting area. What is necessary is just to provide a convex part, and when importance is attached to preventing destruction of the mounting pad 6, the low-elasticity mounting pad 6 should just be provided near the mounting pad 6. FIG.

また、図1には図示していないが、封止材5の外側において、電子部品11の下面と電子部品封止基板7の上面との間に樹脂材料を充填してもよい。樹脂材料を充填した場合、電子部品11と電子部品封止基板7との間の熱膨張係数の差による熱応力を充填された樹脂材料が分散し、過度の応力が接続端子4および封止材5にかかることを抑制することができる。さらに、水分の浸入を防止できることから、接続端子4および封止材5にクラックが発生したり腐食したりすることを効果的に抑制することができる。その結果、電子装置12の信頼性をより高くすることが可能となる。   Although not shown in FIG. 1, a resin material may be filled between the lower surface of the electronic component 11 and the upper surface of the electronic component sealing substrate 7 outside the sealing material 5. When the resin material is filled, the resin material filled with the thermal stress due to the difference in thermal expansion coefficient between the electronic component 11 and the electronic component sealing substrate 7 is dispersed, and excessive stress is applied to the connection terminal 4 and the sealing material. 5 can be suppressed. Furthermore, since it is possible to prevent moisture from entering, it is possible to effectively suppress the occurrence of cracks or corrosion in the connection terminals 4 and the sealing material 5. As a result, the reliability of the electronic device 12 can be further increased.

また、本発明の電子装置12を形成する電子部品封止用基板7は、図6に断面図で示すように、接続パッド3および封止材5を備える電子部品封止領域が、広面積の母基板の一方主面に縦横に配列形成された、いわゆる多数個取りの形態としてもよい。   Moreover, the electronic component sealing substrate 7 forming the electronic device 12 of the present invention has a wide area of the electronic component sealing region including the connection pads 3 and the sealing material 5 as shown in a sectional view in FIG. A so-called multi-cavity configuration in which the main surface of the mother substrate is arranged vertically and horizontally may be employed.

このような多数個取りの形態としておくと、半導体基板8の下面に微小電子機械機構9およびこれに電気的に接続された電極10が多数個配列形成された形態で製作される電子部品11を、多数個同時に気密封止することができ、電子装置12としての生産性を優れたものとすることができる。   In this multi-cavity configuration, the electronic component 11 manufactured in a form in which a large number of microelectromechanical mechanisms 9 and electrodes 10 electrically connected thereto are arranged on the lower surface of the semiconductor substrate 8 is provided. A large number can be hermetically sealed at the same time, and the productivity as the electronic device 12 can be improved.

次に、このような多数個取りの形態による電子装置12の製造方法について、図7(a)〜(d)に基づいて説明する。図7(a)〜(d)は本発明の電子装置12の製造方法の実施の形態の一例をそれぞれ工程順に示した断面図であり、図7において図1〜図5と同じ部位には同じ符号を付してある。   Next, a method for manufacturing the electronic device 12 according to such a multi-cavity configuration will be described with reference to FIGS. FIGS. 7A to 7D are cross-sectional views showing an example of an embodiment of the method for manufacturing the electronic device 12 according to the present invention in the order of steps. In FIG. 7, the same parts as those in FIGS. The code | symbol is attached | subjected.

まず、図7(a)に示すように、半導体母基板8aに電子部品領域11aを多数個縦横に配列形成し、その各領域の下面の中央部に微小電子機械機構9を配置して多数個取り電子部品11bを準備する。   First, as shown in FIG. 7A, a large number of electronic component regions 11a are vertically and horizontally arranged on a semiconductor mother substrate 8a, and a small number of micro electromechanical mechanisms 9 are arranged at the center of the lower surface of each region. Preparation electronic component 11b is prepared.

次に、図7(b)に示すように、上面から下面または側面に導出された配線導体2が形成された絶縁母基板1aと、この絶縁母基板1aの上面に形成された、配線導体2と電気的に接続された接続パッド3と、絶縁母基板1aの上面に微小電子機械機構9に相当する領域を取り囲むように枠状にして接合された封止材用パターン3aと、接続パッド3上に接続端子4を、封止材用パターン3a上に封止材5をそれぞれ形成した封止基板領域7aを多数個、多数個取り電子部品11bの電子部品領域11aに対応させて配列形成した多数個取りの電子部品封止用母基板7bを準備する。   Next, as shown in FIG. 7B, an insulating mother board 1a on which the wiring conductor 2 led out from the upper surface to the lower surface or side surface is formed, and the wiring conductor 2 formed on the upper surface of the insulating mother board 1a. A connection pad 3 electrically connected to the substrate, a sealing material pattern 3a bonded in a frame shape so as to surround a region corresponding to the micro electro mechanical mechanism 9 on the upper surface of the insulating mother substrate 1a, and the connection pad 3 A large number of sealing substrate regions 7a each having the sealing material 5 formed on the sealing material pattern 3a on the connection terminal 4 are arranged in correspondence with the electronic component region 11a of the electronic component 11b. A multi-chip mother board 7b for electronic component sealing is prepared.

次に、図7(c)に示すように、多数個取り電子部品11bを電子部品封止用母基板7bに対し各電子部品領域11aと各封止基板領域7aとを対応させて重ね合わせ、電極10を接続端子4に接合するとともに、微小電子機械機構9の周囲の半導体基板8の下面を封止材5の主面(図7における上面)に接合して、微小電子機械機構9を封止材5の内側に気密封止する。   Next, as shown in FIG. 7 (c), the multi-piece electronic component 11b is superimposed on the electronic component sealing mother board 7b so that each electronic component region 11a and each sealing substrate region 7a correspond to each other. The electrode 10 is bonded to the connection terminal 4 and the lower surface of the semiconductor substrate 8 around the micro electro mechanical mechanism 9 is bonded to the main surface (the upper surface in FIG. 7) of the sealing material 5 to seal the micro electro mechanical mechanism 9. The inside of the stopper 5 is hermetically sealed.

ここで、電極10と接続端子4との接合は、例えば、接続端子4が錫−銀系半田から成り、封止材5の高さと同じ場合には、電極10上に接続端子4を位置合わせして載せ、これらを約250〜300℃程度の温度のリフロー炉中で熱処理すること等により行なわれる。   Here, for example, when the connection terminal 4 is made of tin-silver solder and has the same height as the sealing material 5, the connection terminal 4 is aligned on the electrode 10. These are carried out by heat treatment in a reflow furnace at a temperature of about 250 to 300 ° C.

また、微小電子機械機構9の周囲の半導体母基板8aの下面と封止材5の上面との接合は、例えば、封止材5が鉄−ニッケル−コバルト合金からなる場合には、この接合面に接続端子4と同様の錫−銀系の半田を挟んでおき、上述の電極10と接続端子4との接合と同時にリフロー炉中で熱処理することにより行なうことができる、
接続端子4および封止材5が錫−銀系半田から成り、接続端子4と封止材5との高さにバラツキがある、あるいは電子部品封止用母基板7bに反り等があるような場合には、電子部品11bと電子部品封止用母基板7bとは250℃〜300℃程度の温度で熱圧着することで接合することができる。
Further, the bonding between the lower surface of the semiconductor mother substrate 8a around the micro-electromechanical mechanism 9 and the upper surface of the sealing material 5 is performed, for example, when the sealing material 5 is made of an iron-nickel-cobalt alloy. Can be performed by sandwiching the same tin-silver solder as the connection terminal 4 and heat-treating in the reflow furnace simultaneously with the joining of the electrode 10 and the connection terminal 4.
The connection terminal 4 and the sealing material 5 are made of tin-silver solder, and the height between the connection terminal 4 and the sealing material 5 varies, or the mother board 7b for electronic component sealing has a warp or the like. In this case, the electronic component 11b and the electronic component sealing mother board 7b can be joined by thermocompression bonding at a temperature of about 250 ° C. to 300 ° C.

そして、図(d)に示すように、互いに接合された多数個取り電子部品11bおよび電子部品封止用母基板7bを、ダイシング加工等の切断加工によって、封止基板領域7a毎に分割して、個々の電子装置12を得る。
Then, as shown in FIG. 7 (d), a multi-cavity electronic component 11b and the electronic component sealing mother substrate 7b which are joined together, by cutting the dicing process or the like, and divided for each encapsulation substrate region 7a Thus, the individual electronic devices 12 are obtained.

この個々の電子装置12において、下面の実装パッド6は、例えば、実装パッド6が配置された実装領域が、平面視で封止材5の内側の電子部品封止領域の中心を通る区分直線によって電子部品封止領域を4等分した4つの区分領域のうち3つ以下の区分領域に対向する領域に配置されるようにして形成され、配置されている。   In this individual electronic device 12, the mounting pad 6 on the lower surface is, for example, a section line in which the mounting region in which the mounting pad 6 is disposed passes through the center of the electronic component sealing region inside the sealing material 5 in plan view. The electronic component sealing area is formed and arranged so as to be arranged in an area facing three or less of the four divided areas divided into four equal parts.

そして、この実装パッド6を外部電気回路に半田ボール等の外部端子を介して接続することにより、外部電気回路基板に実装される。この場合、電子部品封止用基板7のうち実装パッド6を介して外部電気回路基板と機械的に接続されない部位では応力が生じないので、少なくとも1つの区分領域において電子部品封止用基板7に作用する応力を低く抑えることができる。   Then, the mounting pads 6 are connected to the external electric circuit via external terminals such as solder balls, thereby mounting on the external electric circuit board. In this case, since no stress is generated in a portion of the electronic component sealing substrate 7 that is not mechanically connected to the external electric circuit substrate via the mounting pad 6, the electronic component sealing substrate 7 is formed in at least one divided region. The acting stress can be kept low.

したがって、あらかじめ半導体母基板8aのうちその応力が低い区分領域に対向する領域に微小電子機械機構9を配列させておくようにすることにより、実装パッド6を外部電気回路に半田ボール等の外部端子を介して接続する際の熱によって応力が発生したとしても、その応力に起因して微小電子機械機構9に歪みが生じることが効果的に防止され、駆動精度の高い微小電子機械機構9が搭載された電子装置12を生産性を高くして製造することができる。   Therefore, by arranging the micro electro mechanical mechanism 9 in advance in a region of the semiconductor mother substrate 8a that faces the segmented region where the stress is low, the mounting pad 6 is connected to an external electric circuit as an external terminal such as a solder ball. Even if a stress is generated due to the heat generated when connecting through the micro electro mechanical mechanism, the micro electro mechanical mechanism 9 is effectively prevented from being distorted due to the stress, and the micro electro mechanical mechanism 9 having high driving accuracy is mounted. The manufactured electronic device 12 can be manufactured with high productivity.

実装パッド6は、平面視で枠状の電子部品封止領域の中心から外周に向かって伸び、枠状の電子部品封止領域を4等分する4つの区分半直線のうち3つ以下の区分半直線に対向する線に沿って実装領域が配置されるように形成してもよい。   The mounting pad 6 extends from the center of the frame-shaped electronic component sealing region to the outer periphery in a plan view, and is divided into three or less sections out of four section half-lines that divide the frame-shaped electronic component sealing region into four equal parts. You may form so that a mounting area | region may be arrange | positioned along the line which opposes a half line.

なお、本発明は上述の実施の形態の例に限定されるものではなく、本発明の要旨の範囲内で種々の変形は可能である。例えば、上述の実施の形態の例では、1つの電子装置12内に1つの微小電子機械機構9を気密封止したが、1つの電子装置12内に複数の微小電子機械機構9を気密封止してもよい。また、電子部品封止用基板7は微小電子機械機構9を収容するための凹部13、すなわちキャビティを形成した例を示したが、必ずしも凹部13を形成する必要はなく、封止材5の高さを適切に設定して微小電子機械機構9が必要とする封止空間を形成してもよい。   Note that the present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist of the present invention. For example, in the example of the above-described embodiment, one microelectromechanical mechanism 9 is hermetically sealed in one electronic device 12, but a plurality of microelectromechanical mechanisms 9 are hermetically sealed in one electronic device 12. May be. Further, although the example in which the electronic component sealing substrate 7 is formed with the concave portion 13 for accommodating the micro-electromechanical mechanism 9, that is, the cavity is shown, the concave portion 13 is not necessarily formed, and the height of the sealing material 5 is high. The sealing space required by the microelectromechanical mechanism 9 may be formed by appropriately setting the length.

本発明の電子装置の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic device of this invention. 本発明の電子装置について、その第1の構成における実施の形態における実装パッドの配置の一例を示す平面図である。It is a top view which shows an example of arrangement | positioning of the mounting pad in embodiment in the 1st structure about the electronic device of this invention. 本発明の電子装置について、その第2の構成における実施の形態における実装パッドの配置の例を示す平面図である。It is a top view which shows an example of arrangement | positioning of the mounting pad in embodiment in the 2nd structure about the electronic device of this invention. 本発明の電子装置について、その第1の構成における実施の形態における実装パッドの配置の他の例を種々示す平面図である。It is a top view which shows various other examples of arrangement | positioning of the mounting pad in embodiment in the 1st structure about the electronic device of this invention. 本発明の電子装置について、その第2の構成における実施の形態における実装パッドの配置の他の例を種々示す平面図である。It is a top view which shows various other examples of arrangement | positioning of the mounting pad in embodiment in the 2nd structure about the electronic device of this invention. 本発明の電子装置を多数個取りの形態とした場合の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment at the time of setting the electronic device of this invention into the form of many pieces. (a)〜(d)は、本発明の電子装置の製造方法の一例をそれぞれ工程順に示す断面図である。(A)-(d) is sectional drawing which shows an example of the manufacturing method of the electronic device of this invention in order of a process, respectively.

符号の説明Explanation of symbols

1:絶縁基板
1a:絶縁母基板
2:配線導体
3:接続パッド
3a:封止材用パターン
4:接続端子
5:封止材
6:実装パッド
7:電子部品封止用基板
7a:封止基板領域
7b:電子部品封止用母基板
8:半導体基板
8a:半導体母基板
9:微小電子機械機構
10:電極
11:電子部品
11a:電子部品領域
11b:電子部品(多数個取り)
12:電子装置
13:凹部
1: Insulating substrate 1a: Insulating mother substrate 2: Wiring conductor 3: Connection pad 3a: Sealing material pattern 4: Connection terminal 5: Sealing material 6: Mounting pad 7: Electronic component sealing substrate 7a: Sealing substrate Area 7b: Electronic component sealing mother board 8: Semiconductor substrate 8a: Semiconductor mother board 9: Micro-electromechanical mechanism 10: Electrode 11: Electronic component 11a: Electronic component area 11b: Electronic component (multi-piece)
12: Electronic device 13: Recess

Claims (2)

下面の中央部に微小電子機械機構が形成された電子部品が、上面に前記微小電子機械機構を取り囲む枠状の電子部品封止領域を有し、下面に、外部端子を介して外部電気回路基板に接合される実装パッドが配置された実装領域を有する電子部品封止用基板に、前記微小電子機械機構を前記枠状の電子部品封止領域の内側に封止して搭載されており、前記実装領域は、平面視で前記枠状の電子部品封止領域の中心を通る区分直線によって前記枠状の電子部品封止領域を4等分した4つの区分領域のうち3つ以下の前記区分領域に対向する領域に、複数の前記区分領域に対向する領域に跨がることなく配置されており、前記区分領域に対向する領域において、前記実装領域以外の領域が前記外部電気回路基板に接合されないことを特徴とする電子装置。 An electronic component having a microelectromechanical mechanism formed at the center of the lower surface has a frame-shaped electronic component sealing region surrounding the microelectromechanical mechanism on the upper surface, and an external electric circuit board on the lower surface via an external terminal Mounted on an electronic component sealing substrate having a mounting region in which mounting pads to be bonded are disposed, and the micro-electromechanical mechanism is mounted inside the frame-shaped electronic component sealing region, The mounting area is not more than three of the four divided areas obtained by dividing the frame-shaped electronic component sealing area into four equal parts by a straight line passing through the center of the frame-shaped electronic component sealing area in plan view. Is disposed in a region facing the plurality of regions without crossing over the regions facing the partition regions, and regions other than the mounting region are not bonded to the external electric circuit board in the regions facing the partition regions. Electronic Location. 下面の中央部に微小電子機械機構が形成された電子部品が、上面に前記微小電子機械機構を取り囲む枠状の電子部品封止領域を有し、下面に、外部端子を介して外部電気回路基板に接合される実装パッドが配置された実装領域を有する電子部品封止用基板に、前記微小電子機械機構を前記枠状の電子部品封止領域の内側に封止して搭載されており、前記実装領域は、平面視で前記枠状の電子部品封止領域の中心から外周に向かって伸び、前記枠状の電子部品封止領域を4等分する4つの区分半直線のうち3つ以下の前記区分半直線に対向する線に沿って配置されており、前記区分半直線に対向する領域において、前記実装領域以外の領域が前記外部電気回路基板に接合されないことを特徴とする電子装置。 An electronic component having a microelectromechanical mechanism formed at the center of the lower surface has a frame-shaped electronic component sealing region surrounding the microelectromechanical mechanism on the upper surface, and an external electric circuit board on the lower surface via an external terminal Mounted on an electronic component sealing substrate having a mounting region in which mounting pads to be bonded are disposed, and the micro-electromechanical mechanism is mounted inside the frame-shaped electronic component sealing region, The mounting area extends from the center of the frame-shaped electronic component sealing area to the outer periphery in plan view, and is less than or equal to three of the four segmented half lines that divide the frame-shaped electronic component sealing area into four equal parts. The electronic device is arranged along a line facing the section half-line, and an area other than the mounting area is not bonded to the external electric circuit board in a region facing the section half-line .
JP2005353227A 2005-11-16 2005-12-07 Electronic equipment Expired - Fee Related JP4781098B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005353227A JP4781098B2 (en) 2005-12-07 2005-12-07 Electronic equipment
CN2006800502016A CN101351399B (en) 2005-11-16 2006-11-16 Electronic part sealing board, electronic part sealing board in multiple part form, electronic device using electronic part sealing board, and electronic device fabricating method
EP06832776.6A EP1961696B1 (en) 2005-11-16 2006-11-16 Electronic device using electronic part sealing board and method of fabricating same
PCT/JP2006/322896 WO2007058280A1 (en) 2005-11-16 2006-11-16 Electronic part sealing board, electronic part sealing board in multiple part form, electronic device using electronic part sealing board, and electronic device fabricating method
KR1020087012341A KR100998499B1 (en) 2005-11-16 2006-11-16 Electronic part sealing board, electronic part sealing board in multiple part form, electronic device using electronic part sealing board, and electronic device fabricating method
US12/094,132 US7932594B2 (en) 2005-11-16 2006-11-16 Electronic component sealing substrate for hermetically sealing a micro electronic mechanical system of an electronic component

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JP2007160499A (en) * 2005-11-16 2007-06-28 Kyocera Corp Electronic part sealing board, electronic part sealing board in multiple part form, electronic device using electronic part sealing board, and electronic device fabricating method

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JPWO2011018973A1 (en) * 2009-08-11 2013-01-17 アルプス電気株式会社 MEMS sensor package
JP2016070670A (en) * 2014-09-26 2016-05-09 京セラ株式会社 Sensor device

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2007160499A (en) * 2005-11-16 2007-06-28 Kyocera Corp Electronic part sealing board, electronic part sealing board in multiple part form, electronic device using electronic part sealing board, and electronic device fabricating method

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