JP2007150245A - 光照射装置、光照射装置の調整方法、結晶化装置、結晶化方法、およびデバイス - Google Patents

光照射装置、光照射装置の調整方法、結晶化装置、結晶化方法、およびデバイス Download PDF

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Publication number
JP2007150245A
JP2007150245A JP2006203587A JP2006203587A JP2007150245A JP 2007150245 A JP2007150245 A JP 2007150245A JP 2006203587 A JP2006203587 A JP 2006203587A JP 2006203587 A JP2006203587 A JP 2006203587A JP 2007150245 A JP2007150245 A JP 2007150245A
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Japan
Prior art keywords
light
wavefront
optical system
homogenizer
intensity distribution
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Abandoned
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JP2006203587A
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Japanese (ja)
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JP2007150245A5 (cg-RX-API-DMAC10.html
Inventor
Masayuki Jumonji
正之 十文字
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Advanced LCD Technologies Development Center Co Ltd
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Advanced LCD Technologies Development Center Co Ltd
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Priority to JP2006203587A priority Critical patent/JP2007150245A/ja
Publication of JP2007150245A publication Critical patent/JP2007150245A/ja
Publication of JP2007150245A5 publication Critical patent/JP2007150245A5/ja
Abandoned legal-status Critical Current

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2006203587A 2005-11-04 2006-07-26 光照射装置、光照射装置の調整方法、結晶化装置、結晶化方法、およびデバイス Abandoned JP2007150245A (ja)

Priority Applications (1)

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JP2006203587A JP2007150245A (ja) 2005-11-04 2006-07-26 光照射装置、光照射装置の調整方法、結晶化装置、結晶化方法、およびデバイス

Applications Claiming Priority (2)

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JP2005320623 2005-11-04
JP2006203587A JP2007150245A (ja) 2005-11-04 2006-07-26 光照射装置、光照射装置の調整方法、結晶化装置、結晶化方法、およびデバイス

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JP2007150245A true JP2007150245A (ja) 2007-06-14
JP2007150245A5 JP2007150245A5 (cg-RX-API-DMAC10.html) 2008-04-17

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JP2006203587A Abandoned JP2007150245A (ja) 2005-11-04 2006-07-26 光照射装置、光照射装置の調整方法、結晶化装置、結晶化方法、およびデバイス

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043788A (ja) * 2007-08-06 2009-02-26 Ulvac Japan Ltd レーザーアニール装置及びレーザーアニール方法
WO2018066172A1 (ja) * 2016-10-04 2018-04-12 株式会社日本製鋼所 レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法
KR20200024638A (ko) * 2018-08-28 2020-03-09 국방과학연구소 링크 가용성이 향상된 광 통신 시스템
CN116438480A (zh) * 2020-11-03 2023-07-14 株式会社电装 光检测装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043788A (ja) * 2007-08-06 2009-02-26 Ulvac Japan Ltd レーザーアニール装置及びレーザーアニール方法
WO2018066172A1 (ja) * 2016-10-04 2018-04-12 株式会社日本製鋼所 レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法
JP2018060888A (ja) * 2016-10-04 2018-04-12 株式会社日本製鋼所 レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法
US10658185B2 (en) 2016-10-04 2020-05-19 The Japan Steel Works, Ltd. Laser irradiation apparatus, method for manufacturing semiconductor device, and method for operating laser irradiation apparatus
TWI716608B (zh) * 2016-10-04 2021-01-21 日商日本製鋼所股份有限公司 雷射照射裝置、半導體裝置的製造方法以及雷射照射裝置的動作方法
KR20200024638A (ko) * 2018-08-28 2020-03-09 국방과학연구소 링크 가용성이 향상된 광 통신 시스템
KR102171779B1 (ko) * 2018-08-28 2020-10-29 국방과학연구소 링크 가용성이 향상된 광 통신 시스템
CN116438480A (zh) * 2020-11-03 2023-07-14 株式会社电装 光检测装置

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