JP2007123546A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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Abstract
【解決手段】銅又は銅を主成分とする合金膜からなる最上層パッド12とAlパッド16との間に、Tiバリア膜15aおよびTiNバリア膜15bを形成する。Tiバリア膜15aの膜厚は、TiNバリア膜15bの膜厚よりも大きくする。
【選択図】図5
Description
以下では、本発明の第1の実施形態について図面を参照しながら説明する。図1は、本発明の第1の実施形態に係る半導体装置の構造を示す断面図である。なお、図1では、3層配線が形成されている例を示しており、拡散層及びトランジスタ構造の図示は省略している。
図3は、Alパッド中の銅濃度とAlパッドの腐食発生との関係の実験結果を示すグラフ図である。図3に示すように、Alパッド中の銅濃度が相対値で約0.1%以下であれば、パッド腐食はほぼ発生しないことが確認された。この事実を元に、パッド中の銅濃度が0.1%以下となるような構成を種々検討した。パッド中の銅濃度が0.1%以下となるためには、最上層パッド12からの銅の拡散を防止する必要がある。
以下では、本発明の第2の実施形態について図面を参照しながら説明する。図5は、本発明の第2の実施形態に係る半導体装置の構造を示す断面図である。図5に示すように、本実施形態の半導体装置では、Tiバリア膜15aの上にTiNバリア膜15bを形成している。それ以外の構成は第1の実施形態と同様であるので、第1の実施形態と同様の符号を付してその説明を省略する。
以下では、第2の実施形態の変形例について、図面を参照しながら説明する。なお、本変形例では、第2の実施形態の説明に用いた図5および図6を再度参照しながら説明を行う。本変形例では、図5に示すTiバリア膜15aの膜厚を100nm以上とし、TiNバリア膜15bの膜厚を10nm以上とする。それ以外の構成は第2の実施形態と同様であるので、詳細な説明を省略する。
2、3、5、7、9、11 絶縁膜
4、8 配線
6、10 接続ビア
12 最上層パッド
13 パッシベーション膜
14 開口
15 Tiバリア膜
15a Tiバリア膜
15b TiNバリア膜
16 Alパッド
Claims (5)
- 半導体基板の上方に形成された銅を含む第1の配線と、
前記第1の配線の上に形成されたTiからなる厚さ100nm以上の第1のバリア膜と、
前記第1のバリア膜の上に形成された第2の配線とを備える、半導体装置。 - 半導体基板の上方に形成された銅を含む第1の配線と、
前記第1の配線の上に形成されたTiからなる第1のバリア膜と、
前記第1のバリア膜の上に形成され、前記第1のバリア膜よりも膜厚の小さいTiNからなる第2のバリア膜と、
前記第2のバリア膜の上に形成された第2の配線とを備える、半導体装置。 - 前記第1のバリア膜の膜厚は100nm以上であり、かつ前記第2のバリア膜の膜厚は10nm以上である、請求項2に記載の半導体装置。
- 前記第2の配線はAlからなる、請求項1または2に記載の半導体装置。
- 前記第2の配線はボンディング用のパッドである、請求項1または2に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005313622A JP4639138B2 (ja) | 2005-10-28 | 2005-10-28 | 半導体装置 |
US11/584,561 US7521801B2 (en) | 2005-10-28 | 2006-10-23 | Semiconductor device |
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Application Number | Priority Date | Filing Date | Title |
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JP2005313622A JP4639138B2 (ja) | 2005-10-28 | 2005-10-28 | 半導体装置 |
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JP2007123546A true JP2007123546A (ja) | 2007-05-17 |
JP4639138B2 JP4639138B2 (ja) | 2011-02-23 |
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JP2005313622A Active JP4639138B2 (ja) | 2005-10-28 | 2005-10-28 | 半導体装置 |
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US (1) | US7521801B2 (ja) |
JP (1) | JP4639138B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8044482B2 (en) | 2008-10-10 | 2011-10-25 | Panasonic Corporation | Semiconductor device |
JP2014123611A (ja) * | 2012-12-20 | 2014-07-03 | Denso Corp | 半導体装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003578A (ja) * | 2009-06-16 | 2011-01-06 | Renesas Electronics Corp | 半導体装置 |
FR2977383A1 (fr) * | 2011-06-30 | 2013-01-04 | St Microelectronics Grenoble 2 | Plot de reception d'un fil de cuivre |
US8476759B2 (en) * | 2011-11-30 | 2013-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical connection structure |
US9536833B2 (en) | 2013-02-01 | 2017-01-03 | Mediatek Inc. | Semiconductor device allowing metal layer routing formed directly under metal pad |
US9455226B2 (en) | 2013-02-01 | 2016-09-27 | Mediatek Inc. | Semiconductor device allowing metal layer routing formed directly under metal pad |
CN103972215B (zh) * | 2013-02-01 | 2017-10-27 | 联发科技股份有限公司 | 半导体装置 |
EP3131118B1 (en) * | 2015-08-12 | 2019-04-17 | MediaTek Inc. | Semiconductor device allowing metal layer routing formed directly under metal pad |
Citations (5)
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---|---|---|---|---|
JPH06208993A (ja) * | 1993-01-11 | 1994-07-26 | Nec Corp | 半導体装置の製造方法 |
JP2001298037A (ja) * | 2000-03-16 | 2001-10-26 | Internatl Business Mach Corp <Ibm> | 銅パッド構造 |
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JP2004241759A (ja) * | 2003-02-05 | 2004-08-26 | Hynix Semiconductor Inc | 半導体素子の金属配線形成方法 |
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JP2005019493A (ja) | 2003-06-24 | 2005-01-20 | Renesas Technology Corp | 半導体装置 |
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JP2014123611A (ja) * | 2012-12-20 | 2014-07-03 | Denso Corp | 半導体装置 |
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US20070096320A1 (en) | 2007-05-03 |
US7521801B2 (en) | 2009-04-21 |
JP4639138B2 (ja) | 2011-02-23 |
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