JP2007123523A - 研磨方法及び研磨装置、並びに電解研磨装置 - Google Patents

研磨方法及び研磨装置、並びに電解研磨装置 Download PDF

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Publication number
JP2007123523A
JP2007123523A JP2005313234A JP2005313234A JP2007123523A JP 2007123523 A JP2007123523 A JP 2007123523A JP 2005313234 A JP2005313234 A JP 2005313234A JP 2005313234 A JP2005313234 A JP 2005313234A JP 2007123523 A JP2007123523 A JP 2007123523A
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JP
Japan
Prior art keywords
polishing
substrate
cleaning
electrode
electrolytic
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Pending
Application number
JP2005313234A
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English (en)
Japanese (ja)
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JP2007123523A5 (enExample
Inventor
Manabu Tsujimura
学 辻村
Akira Fukunaga
明 福永
Taketaka Wada
雄高 和田
Itsuki Obata
厳貴 小畠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2005313234A priority Critical patent/JP2007123523A/ja
Priority to US11/316,845 priority patent/US20070099426A1/en
Publication of JP2007123523A publication Critical patent/JP2007123523A/ja
Publication of JP2007123523A5 publication Critical patent/JP2007123523A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2005313234A 2005-10-27 2005-10-27 研磨方法及び研磨装置、並びに電解研磨装置 Pending JP2007123523A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005313234A JP2007123523A (ja) 2005-10-27 2005-10-27 研磨方法及び研磨装置、並びに電解研磨装置
US11/316,845 US20070099426A1 (en) 2005-10-27 2005-12-27 Polishing method, polishing apparatus, and electrolytic polishing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005313234A JP2007123523A (ja) 2005-10-27 2005-10-27 研磨方法及び研磨装置、並びに電解研磨装置

Publications (2)

Publication Number Publication Date
JP2007123523A true JP2007123523A (ja) 2007-05-17
JP2007123523A5 JP2007123523A5 (enExample) 2008-10-23

Family

ID=37996979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005313234A Pending JP2007123523A (ja) 2005-10-27 2005-10-27 研磨方法及び研磨装置、並びに電解研磨装置

Country Status (2)

Country Link
US (1) US20070099426A1 (enExample)
JP (1) JP2007123523A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013510007A (ja) * 2009-11-05 2013-03-21 ピーター ヴォルターズ ゲーエムベーハー 平坦なワークピースを両面加工する装置および方法
JP2015071192A (ja) * 2013-10-01 2015-04-16 株式会社フジミインコーポレーテッド 基板の製造方法
JP2015204127A (ja) * 2014-04-16 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法
JP2022043176A (ja) * 2020-06-30 2022-03-15 株式会社荏原製作所 基板処理装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070135024A1 (en) * 2005-12-08 2007-06-14 Itsuki Kobata Polishing pad and polishing apparatus
JP2008032335A (ja) * 2006-07-31 2008-02-14 Hitachi High-Technologies Corp ミニエンバイロメント装置、検査装置、製造装置、及び空間の清浄化方法
DE102010052698A1 (de) * 2010-11-26 2012-05-31 Dürr Systems GmbH Reinigungsgerät und Reinigungsbürste für einen Zerstäuber und entsprechendes Reinigungsverfahren
US12285837B2 (en) 2021-11-18 2025-04-29 SanDisk Technologies, Inc. Wafer surface chemical distribution sensing system and methods for operating the same

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474420A (ja) * 1990-07-17 1992-03-09 Fujitsu Ltd 洗浄装置及び洗浄方法
US6220934B1 (en) * 1998-07-23 2001-04-24 Micron Technology, Inc. Method for controlling pH during planarization and cleaning of microelectronic substrates
JP2002520850A (ja) * 1998-07-09 2002-07-09 エーシーエム リサーチ，インコーポレイティド 半導体デバイス上の金属相互接続を電解研磨する方法及び装置
JP2002343797A (ja) * 2001-03-16 2002-11-29 Ebara Corp 配線形成装置及びその方法
JP2003197585A (ja) * 2001-12-26 2003-07-11 Tokyo Seimitsu Co Ltd ウェーハ研磨方法及び装置
JP2003338490A (ja) * 2002-05-17 2003-11-28 Ebara Corp 基板処理装置及び基板処理方法
JP2004327561A (ja) * 2003-04-22 2004-11-18 Ebara Corp 基板処理方法及び基板処理装置
JP2004356117A (ja) * 2003-05-26 2004-12-16 Ebara Corp 基板処理方法及びその装置
WO2004111146A1 (en) * 2003-06-06 2004-12-23 Applied Materials, Inc. Polishing composition and method for polishing a conductive material

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7582564B2 (en) * 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474420A (ja) * 1990-07-17 1992-03-09 Fujitsu Ltd 洗浄装置及び洗浄方法
JP2002520850A (ja) * 1998-07-09 2002-07-09 エーシーエム リサーチ，インコーポレイティド 半導体デバイス上の金属相互接続を電解研磨する方法及び装置
US6220934B1 (en) * 1998-07-23 2001-04-24 Micron Technology, Inc. Method for controlling pH during planarization and cleaning of microelectronic substrates
JP2002343797A (ja) * 2001-03-16 2002-11-29 Ebara Corp 配線形成装置及びその方法
JP2003197585A (ja) * 2001-12-26 2003-07-11 Tokyo Seimitsu Co Ltd ウェーハ研磨方法及び装置
JP2003338490A (ja) * 2002-05-17 2003-11-28 Ebara Corp 基板処理装置及び基板処理方法
JP2004327561A (ja) * 2003-04-22 2004-11-18 Ebara Corp 基板処理方法及び基板処理装置
JP2004356117A (ja) * 2003-05-26 2004-12-16 Ebara Corp 基板処理方法及びその装置
WO2004111146A1 (en) * 2003-06-06 2004-12-23 Applied Materials, Inc. Polishing composition and method for polishing a conductive material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013510007A (ja) * 2009-11-05 2013-03-21 ピーター ヴォルターズ ゲーエムベーハー 平坦なワークピースを両面加工する装置および方法
JP2015071192A (ja) * 2013-10-01 2015-04-16 株式会社フジミインコーポレーテッド 基板の製造方法
JP2015204127A (ja) * 2014-04-16 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法
JP2022043176A (ja) * 2020-06-30 2022-03-15 株式会社荏原製作所 基板処理装置

Also Published As

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US20070099426A1 (en) 2007-05-03

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