JP2007103957A5 - - Google Patents
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- Publication number
- JP2007103957A5 JP2007103957A5 JP2006301374A JP2006301374A JP2007103957A5 JP 2007103957 A5 JP2007103957 A5 JP 2007103957A5 JP 2006301374 A JP2006301374 A JP 2006301374A JP 2006301374 A JP2006301374 A JP 2006301374A JP 2007103957 A5 JP2007103957 A5 JP 2007103957A5
- Authority
- JP
- Japan
- Prior art keywords
- laser
- semiconductor film
- irradiation
- laser beam
- slit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 17
- 230000001678 irradiating effect Effects 0.000 claims 8
- 239000007789 gas Substances 0.000 claims 5
- 239000011261 inert gas Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000007664 blowing Methods 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000010355 oscillation Effects 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006301374A JP4646894B2 (ja) | 2001-09-07 | 2006-11-07 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001272751 | 2001-09-07 | ||
| JP2001273687 | 2001-09-10 | ||
| JP2006301374A JP4646894B2 (ja) | 2001-09-07 | 2006-11-07 | 半導体装置の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002252777A Division JP3908124B2 (ja) | 2001-09-07 | 2002-08-30 | レーザー装置及びレーザー照射方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007103957A JP2007103957A (ja) | 2007-04-19 |
| JP2007103957A5 true JP2007103957A5 (cg-RX-API-DMAC7.html) | 2009-01-22 |
| JP4646894B2 JP4646894B2 (ja) | 2011-03-09 |
Family
ID=38030513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006301374A Expired - Fee Related JP4646894B2 (ja) | 2001-09-07 | 2006-11-07 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4646894B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7428481B2 (ja) * | 2019-06-07 | 2024-02-06 | 住友重機械工業株式会社 | レーザアニール方法及びレーザ制御装置 |
| KR102758857B1 (ko) * | 2021-12-28 | 2025-01-24 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55150238A (en) * | 1979-05-10 | 1980-11-22 | Matsushita Electric Ind Co Ltd | Method of irradiating laser beam |
| JPS6180814A (ja) * | 1984-09-27 | 1986-04-24 | Sony Corp | 線状エネルギ−ビ−ム照射装置 |
| JPS61179524A (ja) * | 1985-02-04 | 1986-08-12 | Toshiba Corp | 多結晶シリコン膜の単結晶方法 |
| JPH0797554B2 (ja) * | 1986-06-25 | 1995-10-18 | 東京エレクトロン株式会社 | ビ−ムアニ−ル装置 |
| JPS6482636A (en) * | 1987-09-25 | 1989-03-28 | Nec Corp | Gettering device by use of laser light |
| JP3535241B2 (ja) * | 1994-11-18 | 2004-06-07 | 株式会社半導体エネルギー研究所 | 半導体デバイス及びその作製方法 |
| JP3091904B2 (ja) * | 1995-10-05 | 2000-09-25 | 株式会社日本製鋼所 | レーザーアニール処理装置 |
| JP2000260731A (ja) * | 1999-03-10 | 2000-09-22 | Mitsubishi Electric Corp | レーザ熱処理方法、レーザ熱処理装置および半導体デバイス |
| JP4101409B2 (ja) * | 1999-08-19 | 2008-06-18 | シャープ株式会社 | 半導体装置の製造方法 |
| JP3908129B2 (ja) * | 2001-09-10 | 2007-04-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2003332258A (ja) * | 2002-05-15 | 2003-11-21 | Sony Corp | レーザアニール装置、半導体デバイス、及び半導体デバイスの製造方法。 |
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2006
- 2006-11-07 JP JP2006301374A patent/JP4646894B2/ja not_active Expired - Fee Related