JP2007095726A - 表示装置の製造方法 - Google Patents
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- JP2007095726A JP2007095726A JP2005279215A JP2005279215A JP2007095726A JP 2007095726 A JP2007095726 A JP 2007095726A JP 2005279215 A JP2005279215 A JP 2005279215A JP 2005279215 A JP2005279215 A JP 2005279215A JP 2007095726 A JP2007095726 A JP 2007095726A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 230000002950 deficient Effects 0.000 claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 111
- 230000002776 aggregation Effects 0.000 claims description 77
- 238000004220 aggregation Methods 0.000 claims description 63
- 239000010409 thin film Substances 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 5
- 230000004048 modification Effects 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 30
- 229910052710 silicon Inorganic materials 0.000 abstract description 30
- 239000010703 silicon Substances 0.000 abstract description 30
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- 230000008025 crystallization Effects 0.000 abstract description 23
- 230000007547 defect Effects 0.000 abstract description 10
- 230000016615 flocculation Effects 0.000 abstract 4
- 238000005189 flocculation Methods 0.000 abstract 4
- 238000002407 reforming Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 46
- 229920005591 polysilicon Polymers 0.000 description 38
- 239000011521 glass Substances 0.000 description 17
- 238000005054 agglomeration Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 9
- 238000000059 patterning Methods 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
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- 238000001259 photo etching Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000004520 agglutination Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000010626 work up procedure Methods 0.000 description 1
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
【解決手段】 第1の状態の半導体膜にレーザを照射して細長い結晶粒を有する第2の状態の半導体膜に改質する半導体膜改質工程と、
前記半導体膜改質工程において発生した前記半導体膜の凝集を検出する凝集検出工程と、
前記凝集の位置が、所定の領域内に存在する場合は不良と判定し、前記所定の領域外に存在する場合は良品と判定する不良判定工程とを含むことを特徴とする表示装置の製造方法。
【選択図】 図14
Description
(1)第1の状態の半導体膜にレーザを照射して細長い結晶粒を有する第2の状態の半導体膜に改質する半導体膜改質工程と、
前記半導体膜改質工程において発生した前記半導体膜の凝集を検出する凝集検出工程と、
前記凝集の位置が、所定の領域内に存在する場合は不良と判定し、前記所定の領域外に存在する場合は良品と判定する不良判定工程とを含むことを特徴とする。
また、今回は図示していないが、ポリシリコン膜を用いて容量を形成する場合には、凝集が発生すると容量が変動してしまうので、不良判定に用いる所定の領域を容量が形成される領域にすればこの問題を回避できる。
Claims (8)
- 第1の状態の半導体膜にレーザを照射して細長い結晶粒を有する第2の状態の半導体膜に改質する半導体膜改質工程と、
前記半導体膜改質工程において発生した前記半導体膜の凝集を検出する凝集検出工程と、
前記凝集の位置が、所定の領域内に存在する場合は不良と判定し、前記所定の領域外に存在する場合は良品と判定する不良判定工程とを含むことを特徴とする表示装置の製造方法。 - 前記所定の領域は、前記第2の状態の前記半導体膜をパターニングする際に、前記第2の状態の前記半導体膜が残る領域を含むことを特徴とする請求項1に記載の表示装置の製造方法。
- 前記所定の領域は、前記第2の状態の前記半導体膜を用いた薄膜トランジスタが形成される領域を含むことを特徴とする請求項1または2に記載の表示装置の製造方法。
- 前記所定の領域は、前記第2の状態の前記半導体膜を用いた薄膜トランジスタのチャネル領域が形成される領域を含むことを特徴とする請求項1から3の何れかに記載の表示装置の製造方法。
- 前記所定の領域は、前記第2の状態の前記半導体膜を用いた薄膜トランジスタのソース領域またはドレイン領域のうち、コンタクトホールが形成される領域を含むことを特徴とする請求項1から4の何れかに記載の表示装置の製造方法。
- 前記所定の領域は、前記第2の状態の前記半導体膜を用いた容量が形成される領域を含むことを特徴とする請求項1から5の何れかに記載の表示装置の製造方法。
- 前記所定の領域は、1または複数のホトマスクのデータに基づいて計算されることを特徴とする請求項1から6の何れかに記載の表示装置の製造方法。
- 前記凝集検出工程は、前記半導体膜を透過する光量で前記凝集の存在を検出するものであることを特徴とする請求項1から7の何れかに記載の表示装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005279215A JP4855745B2 (ja) | 2005-09-27 | 2005-09-27 | 表示装置の製造方法 |
US11/509,739 US7524685B2 (en) | 2005-09-27 | 2006-08-25 | Manufacturing method of a display device |
CNA2006101393427A CN1941280A (zh) | 2005-09-27 | 2006-09-26 | 显示装置的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005279215A JP4855745B2 (ja) | 2005-09-27 | 2005-09-27 | 表示装置の製造方法 |
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JP2007095726A true JP2007095726A (ja) | 2007-04-12 |
JP4855745B2 JP4855745B2 (ja) | 2012-01-18 |
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JP2005279215A Expired - Fee Related JP4855745B2 (ja) | 2005-09-27 | 2005-09-27 | 表示装置の製造方法 |
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US (1) | US7524685B2 (ja) |
JP (1) | JP4855745B2 (ja) |
CN (1) | CN1941280A (ja) |
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JP2009065146A (ja) * | 2007-08-15 | 2009-03-26 | Sony Corp | 半導体薄膜の形成方法および半導体薄膜の検査装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11204606A (ja) * | 1998-01-12 | 1999-07-30 | Hitachi Ltd | 結晶性半導体薄膜の評価方法およびレーザアニール装置 |
JP2001110864A (ja) * | 1999-10-06 | 2001-04-20 | Seiko Epson Corp | 多結晶性半導体膜の検査方法および多結晶性半導体膜の検査装置 |
JP2001160625A (ja) * | 1999-09-24 | 2001-06-12 | Toshiba Corp | 半導体回路の製造方法 |
JP2004151668A (ja) * | 2002-09-02 | 2004-05-27 | Hitachi Displays Ltd | 表示装置とその製造方法および製造装置 |
Family Cites Families (3)
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JP4744700B2 (ja) * | 2001-01-29 | 2011-08-10 | 株式会社日立製作所 | 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置 |
JP3903761B2 (ja) | 2001-10-10 | 2007-04-11 | 株式会社日立製作所 | レ−ザアニ−ル方法およびレ−ザアニ−ル装置 |
JP4095860B2 (ja) * | 2002-08-12 | 2008-06-04 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
-
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- 2005-09-27 JP JP2005279215A patent/JP4855745B2/ja not_active Expired - Fee Related
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- 2006-08-25 US US11/509,739 patent/US7524685B2/en not_active Expired - Fee Related
- 2006-09-26 CN CNA2006101393427A patent/CN1941280A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11204606A (ja) * | 1998-01-12 | 1999-07-30 | Hitachi Ltd | 結晶性半導体薄膜の評価方法およびレーザアニール装置 |
JP2001160625A (ja) * | 1999-09-24 | 2001-06-12 | Toshiba Corp | 半導体回路の製造方法 |
JP2001110864A (ja) * | 1999-10-06 | 2001-04-20 | Seiko Epson Corp | 多結晶性半導体膜の検査方法および多結晶性半導体膜の検査装置 |
JP2004151668A (ja) * | 2002-09-02 | 2004-05-27 | Hitachi Displays Ltd | 表示装置とその製造方法および製造装置 |
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Publication number | Publication date |
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CN1941280A (zh) | 2007-04-04 |
US20070072349A1 (en) | 2007-03-29 |
JP4855745B2 (ja) | 2012-01-18 |
US7524685B2 (en) | 2009-04-28 |
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