JP2007088819A - 圧電薄膜振動子 - Google Patents
圧電薄膜振動子 Download PDFInfo
- Publication number
- JP2007088819A JP2007088819A JP2005275190A JP2005275190A JP2007088819A JP 2007088819 A JP2007088819 A JP 2007088819A JP 2005275190 A JP2005275190 A JP 2005275190A JP 2005275190 A JP2005275190 A JP 2005275190A JP 2007088819 A JP2007088819 A JP 2007088819A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric
- layer
- vibrator
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 141
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 69
- 239000010432 diamond Substances 0.000 claims abstract description 69
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- 239000010408 film Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 239000000126 substance Substances 0.000 abstract 3
- 238000003475 lamination Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 122
- 239000000758 substrate Substances 0.000 description 41
- 239000000463 material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005275190A JP2007088819A (ja) | 2005-09-22 | 2005-09-22 | 圧電薄膜振動子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005275190A JP2007088819A (ja) | 2005-09-22 | 2005-09-22 | 圧電薄膜振動子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007088819A true JP2007088819A (ja) | 2007-04-05 |
| JP2007088819A5 JP2007088819A5 (enExample) | 2008-10-16 |
Family
ID=37975359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005275190A Withdrawn JP2007088819A (ja) | 2005-09-22 | 2005-09-22 | 圧電薄膜振動子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007088819A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012199934A (ja) * | 2007-05-14 | 2012-10-18 | Cree Inc | バルク音響デバイスおよびその作製方法 |
| JP2013026250A (ja) * | 2011-07-15 | 2013-02-04 | Murata Mfg Co Ltd | 圧電薄膜素子の製造方法 |
| US20200021270A1 (en) * | 2018-07-11 | 2020-01-16 | Gregory Walker Johnson | Diamond nano resonator semi conductor |
| JP7600973B2 (ja) | 2021-12-08 | 2024-12-17 | 株式会社Sumco | 積層ウェーハ及びその製造方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10209794A (ja) * | 1997-01-21 | 1998-08-07 | Mitsubishi Materials Corp | 圧電薄膜共振子 |
| JP2001102902A (ja) * | 1999-09-29 | 2001-04-13 | Kyocera Corp | 圧電共振子 |
| JP2001185985A (ja) * | 1999-12-27 | 2001-07-06 | Kyocera Corp | 圧電共振子 |
| JP2001326553A (ja) * | 2000-05-17 | 2001-11-22 | Murata Mfg Co Ltd | 圧電フィルタ、通信装置および圧電フィルタの製造方法 |
| JP2004101390A (ja) * | 2002-09-10 | 2004-04-02 | Nippon Platec Co Ltd | ダイヤモンドqcmの作製方法及びそのダイヤモンドqcm |
| WO2004104272A1 (ja) * | 2003-05-26 | 2004-12-02 | Sumitomo Electric Industries, Ltd. | ダイヤモンド被覆電極及びその製造方法 |
-
2005
- 2005-09-22 JP JP2005275190A patent/JP2007088819A/ja not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10209794A (ja) * | 1997-01-21 | 1998-08-07 | Mitsubishi Materials Corp | 圧電薄膜共振子 |
| JP2001102902A (ja) * | 1999-09-29 | 2001-04-13 | Kyocera Corp | 圧電共振子 |
| JP2001185985A (ja) * | 1999-12-27 | 2001-07-06 | Kyocera Corp | 圧電共振子 |
| JP2001326553A (ja) * | 2000-05-17 | 2001-11-22 | Murata Mfg Co Ltd | 圧電フィルタ、通信装置および圧電フィルタの製造方法 |
| JP2004101390A (ja) * | 2002-09-10 | 2004-04-02 | Nippon Platec Co Ltd | ダイヤモンドqcmの作製方法及びそのダイヤモンドqcm |
| WO2004104272A1 (ja) * | 2003-05-26 | 2004-12-02 | Sumitomo Electric Industries, Ltd. | ダイヤモンド被覆電極及びその製造方法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012199934A (ja) * | 2007-05-14 | 2012-10-18 | Cree Inc | バルク音響デバイスおよびその作製方法 |
| JP2013026250A (ja) * | 2011-07-15 | 2013-02-04 | Murata Mfg Co Ltd | 圧電薄膜素子の製造方法 |
| US20200021270A1 (en) * | 2018-07-11 | 2020-01-16 | Gregory Walker Johnson | Diamond nano resonator semi conductor |
| JP7600973B2 (ja) | 2021-12-08 | 2024-12-17 | 株式会社Sumco | 積層ウェーハ及びその製造方法 |
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