JP2007088452A - 伸張−圧縮境界またはその付近におけるコンタクトの短絡の低減 - Google Patents
伸張−圧縮境界またはその付近におけるコンタクトの短絡の低減 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 10
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000007906 compression Methods 0.000 description 16
- 230000001154 acute effect Effects 0.000 description 15
- 230000006835 compression Effects 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000009977 dual effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
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- Microelectronics & Electronic Packaging (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】これは半導体装置のサイズの大幅な増加なしに、或いは先行の設計と同等のサイズの増加によりできる。例えば単なるデバイスのレイアウトの調整により、2つの異なる共通ゲートのコンタクトをT−C境界に対して反対方向にオフセットしてもよい。或いは、ジグザク又は他の類似パターンを有するT−C境界の形成により、短絡される複数のサブウェイの形成の可能性を低減しながら、複数のコンタクトを互いに接近して配置してもよい。このようなレイアウト調整は、さらなる工程やコストを必要としない。
【選択図】図7
Description
Claims (20)
- 共通の第1のゲートを共有する第1のPFET及び第1のNFETと、
共通の第2のゲートを共有する第2のPFET及び第2のNFETと、
前記第1及び第2のPFET上に配置された圧縮性応力層と、
前記第1及び第2のNFET上に配置され、境界において前記圧縮性応力層と接触する伸張性応力層と、
前記第1のゲートに電気的に接続され、前記圧縮性応力層を通って延在する第1の導電性プラグと、
前記第2のゲートに電気的に接続され、前記伸張性応力層を通って延在する第2の導電性プラグとを具備し、
前記第1及び第2の導電性プラグは、境界に対して反対方向にオフセットされている半導体装置。 - 前記第1の導電性プラグは伸張性応力層に接触せず、前記第2の導電性プラグは圧縮性応力層に接触しない請求項1記載の半導体装置。
- 前記第1及び第2の各導電性プラグのエッジは、前記境界に存在し、前記境界に沿って延在している請求項1記載の半導体装置。
- 前記第1及び第2の導電性プラグは、相互に異なる電圧である請求項1記載の半導体装置。
- 前記圧縮性応力層及び前記伸張性応力層は、前記境界において相互にオーバーラップしている請求項1記載の半導体装置。
- 前記第1の導電性プラグは前記圧縮性応力層を通って完全に延在し、前記第2の導電性プラグは前記伸張性応力層を通って完全に延在している請求項1記載の半導体装置。
- シリコン層と、
前記シリコン層の第1の部分上に配置されている圧縮性応力層と、
前記シリコン層の第2の部分上に配置され、境界において前記圧縮性応力層と接触している伸張性応力層と、
前記圧縮性応力層を通って延在し、前記境界の第3の部分の第1の側方に配置されている第1の導電性プラグと、
前記伸張性応力層を通って延在し、前記境界の第3の部分の第2の対向する側方に配置されている第2の導電性プラグとを具備し、
前記境界は、相互からオフセットされている第1及び第2の部分と、前記第1及び第2の部分を接続する第3の部分とを有している半導体装置。 - 前記第1の導電性プラグも前記伸張性応力層を通って延在し、前記第2の導電性プラグも前記圧縮性応力層を通って延在している請求項7記載の半導体装置。
- 前記境界の前記第1及び第2の部分は互いに平行であり、前記境界の第3の部分は前記境界の前記第1及び第2の部分と直交している請求項7記載の半導体装置。
- 前記第1の導電性プラグのエッジは、前記境界の前記第1の部分に位置し、前記境界の前記第1の部分に沿って延在し、前記第2の導電性プラグのエッジは、前記境界の前記第2の部分に位置し、前記境界の前記第2の部分に沿って延在している請求項7記載の半導体装置。
- さらに、前記第1の導電性プラグに電気的に接続されている共通の第1のゲートを共有する第1のPFET及び第1のNFETと、
前記第2の導電性プラグに電気的に接続されている共通の第2のゲートを共有する第2のPFET及び第2のNFETとを具備し、
前記圧縮性応力層は前記第1及び第2のPFET上に配置され、前記伸張性応力層は前記第1及び第2のNFET上に配置されている請求項7記載の半導体装置。 - 前記第1及び第2の導電性プラグは、相互に異なる電圧を与えられる請求項7記載の半導体装置。
- 前記圧縮性応力層及び前記伸張性応力層は、前記境界において互いにオーバーラップしている請求項7記載の半導体装置。
- 前記圧縮性応力層と前記シリコン層との間と、前記伸張性応力層と前記シリコン層との間に配置され、前記境界を横切って延在し、前記第1の導電性プラグに電気的に接続されている第1のポリシリコン層と、
前記第1のポリシリコン層から物理的に分離され、前記圧縮性応力層と前記シリコン層との間と、前記伸張性応力層と前記シリコン層との間に配置され、前記境界を横切って延在し、前記第2の導電性プラグに電気的に接続されている第2のポリシリコン層とをさらに含んでいる請求項7記載の半導体装置。 - シリコン層と、
前記シリコン層の第1の部分上に配置される圧縮性応力層と、
前記シリコン層の第2の部分上に配置され、境界において前記圧縮性応力層と接触している伸張性応力層と、
前記圧縮性応力層と前記シリコン層との間と、前記伸張性応力層と前記シリコン層との間に配置され、前記境界を横切って延在する第1のポリシリコン層と、
前記第1のポリシリコン層から物理的に分離され、前記圧縮性応力層と前記シリコン層との間と、前記伸張性応力層と前記シリコン層との間に配置され、前記境界を横切って延在する第2のポリシリコン層と、
前記第1のポリシリコン層に電気的に接続され、前記圧縮性応力層を通って延在する第1の導電性プラグと、
前記第2のポリシリコン層に電気的に接続され、前記伸張性応力層を通って延在する第2の導電性プラグとを具備し、
前記第1及び第2の導電性プラグは、前記境界に対して、反対方向にオフセットされている半導体装置。 - 前記第1の導電性プラグは、前記伸張性応力層に接触せず、前記第2の導電性プラグは、前記圧縮性応力層に接触しない請求項15記載の半導体装置。
- 前記第1及び第2の各導電性プラグのエッジは前記境界に位置し、前記境界に沿って延在している請求項15記載の半導体装置。
- 前記第1及び第2の導電性プラグは、相互に異なる電圧を与えられる請求項15記載の半導体装置。
- 前記圧縮性応力層及び前記伸張性応力層は、前記境界において相互にオーバーラップしている請求項15記載の半導体装置。
- 前記第1の導電性プラグは、前記圧縮性応力層を通して完全に延在し、前記第2の導電性プラグは、前記伸張性応力層を通して完全に延在している請求項15記載の半導体装置。
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US11/211,604 US7514752B2 (en) | 2005-08-26 | 2005-08-26 | Reduction of short-circuiting between contacts at or near a tensile-compressive boundary |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007158258A (ja) * | 2005-12-08 | 2007-06-21 | Sony Corp | 半導体装置の製造方法 |
JP2007173466A (ja) * | 2005-12-21 | 2007-07-05 | Toshiba Corp | 半導体装置 |
JP2007235074A (ja) * | 2006-03-03 | 2007-09-13 | Fujitsu Ltd | 半導体装置およびその製造方法 |
JP2009520363A (ja) * | 2005-12-14 | 2009-05-21 | フリースケール セミコンダクター インコーポレイテッド | ストレッサを有する半導体デバイスおよびその製造方法 |
JP2009188330A (ja) * | 2008-02-08 | 2009-08-20 | Fujitsu Microelectronics Ltd | 半導体装置およびその製造方法 |
JP2010541280A (ja) * | 2007-10-26 | 2010-12-24 | シノプシス, インコーポレイテッド | 配置配線システムにおける設計最適化のためのフィラーセル |
JP2013069863A (ja) * | 2011-09-22 | 2013-04-18 | Elpida Memory Inc | 半導体装置 |
US8835320B2 (en) | 2010-06-29 | 2014-09-16 | Tokyo Electron Limited | Etching method and device |
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US20070069307A1 (en) * | 2005-09-27 | 2007-03-29 | Kentaro Eda | Semiconductor device and method of manufacturing the same |
US7439120B2 (en) * | 2006-08-11 | 2008-10-21 | Advanced Micro Devices, Inc. | Method for fabricating stress enhanced MOS circuits |
US7416931B2 (en) * | 2006-08-22 | 2008-08-26 | Advanced Micro Devices, Inc. | Methods for fabricating a stress enhanced MOS circuit |
US7442601B2 (en) * | 2006-09-18 | 2008-10-28 | Advanced Micro Devices, Inc. | Stress enhanced CMOS circuits and methods for their fabrication |
US7633103B2 (en) * | 2007-08-28 | 2009-12-15 | Globalfoundries Inc. | Semiconductor device and methods for fabricating same |
JP2009105279A (ja) * | 2007-10-24 | 2009-05-14 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法及び半導体装置 |
US9472423B2 (en) * | 2007-10-30 | 2016-10-18 | Synopsys, Inc. | Method for suppressing lattice defects in a semiconductor substrate |
JP5389352B2 (ja) | 2007-12-06 | 2014-01-15 | ローム株式会社 | 半導体装置 |
US8859357B2 (en) * | 2010-11-03 | 2014-10-14 | Texas Instruments Incorporated | Method for improving device performance using dual stress liner boundary |
US9589833B1 (en) | 2015-09-10 | 2017-03-07 | International Business Machines Corporation | Preventing leakage inside air-gap spacer during contact formation |
US10854604B1 (en) * | 2019-09-20 | 2020-12-01 | Qualcomm Incorporated | Offset gate contact |
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JP2004023047A (ja) * | 2002-06-20 | 2004-01-22 | Renesas Technology Corp | 半導体装置 |
JP2004327540A (ja) * | 2003-04-22 | 2004-11-18 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP2006324278A (ja) * | 2005-05-17 | 2006-11-30 | Sony Corp | 半導体装置およびその製造方法 |
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- 2005-08-26 US US11/211,604 patent/US7514752B2/en not_active Expired - Fee Related
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- 2006-08-28 JP JP2006231300A patent/JP4521383B2/ja not_active Expired - Fee Related
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JP2003086708A (ja) * | 2000-12-08 | 2003-03-20 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2003273240A (ja) * | 2002-03-19 | 2003-09-26 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2004023047A (ja) * | 2002-06-20 | 2004-01-22 | Renesas Technology Corp | 半導体装置 |
JP2004327540A (ja) * | 2003-04-22 | 2004-11-18 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP2006324278A (ja) * | 2005-05-17 | 2006-11-30 | Sony Corp | 半導体装置およびその製造方法 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007158258A (ja) * | 2005-12-08 | 2007-06-21 | Sony Corp | 半導体装置の製造方法 |
JP2009520363A (ja) * | 2005-12-14 | 2009-05-21 | フリースケール セミコンダクター インコーポレイテッド | ストレッサを有する半導体デバイスおよびその製造方法 |
JP2007173466A (ja) * | 2005-12-21 | 2007-07-05 | Toshiba Corp | 半導体装置 |
JP2007235074A (ja) * | 2006-03-03 | 2007-09-13 | Fujitsu Ltd | 半導体装置およびその製造方法 |
US8749062B2 (en) | 2006-03-03 | 2014-06-10 | Fujitsu Semiconductor Limited | Semiconductor device and process for producing the same |
US9287168B2 (en) | 2006-03-03 | 2016-03-15 | Fujitsu Semiconductor Limited | Semiconductor device and process for producing the same |
JP2010541280A (ja) * | 2007-10-26 | 2010-12-24 | シノプシス, インコーポレイテッド | 配置配線システムにおける設計最適化のためのフィラーセル |
US8504969B2 (en) | 2007-10-26 | 2013-08-06 | Synopsys, Inc. | Filler cells for design optimization in a place-and-route system |
JP2009188330A (ja) * | 2008-02-08 | 2009-08-20 | Fujitsu Microelectronics Ltd | 半導体装置およびその製造方法 |
US8835320B2 (en) | 2010-06-29 | 2014-09-16 | Tokyo Electron Limited | Etching method and device |
JP2013069863A (ja) * | 2011-09-22 | 2013-04-18 | Elpida Memory Inc | 半導体装置 |
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JP4521383B2 (ja) | 2010-08-11 |
US20070045747A1 (en) | 2007-03-01 |
US7514752B2 (en) | 2009-04-07 |
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