JP2007070675A - 半導体電極とそれを用いたエネルギ変換システム - Google Patents
半導体電極とそれを用いたエネルギ変換システム Download PDFInfo
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- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 101710134784 Agnoprotein Proteins 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
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- FSJSYDFBTIVUFD-XHTSQIMGSA-N (e)-4-hydroxypent-3-en-2-one;oxovanadium Chemical compound [V]=O.C\C(O)=C/C(C)=O.C\C(O)=C/C(C)=O FSJSYDFBTIVUFD-XHTSQIMGSA-N 0.000 description 1
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- 229910002367 SrTiO Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
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Abstract
【解決手段】 半導体材料から形成される半導体層3と、半導体層3上に設けられた金属元素イオンから形成される金属イオン層4と、を含むことを特徴とする。
【選択図】 図1
Description
A. Kudo, K.Ueda, H. Kato, I. Mikami, Catal. Lett., 53(1998), 229 K. Sayama, A. Nomura, Z. Zou, R. Abe, H. Arakawa, Chem. Commun. (2003) 2908 S. Kohtani, J. Hiro, N. Yamamoto, A. Kudo, K. Tokumura, R. Nakagaki, Catal. commun. 6 (2005) 185 V. Subramanian, E. Wolf, and P. V. Kamat, J. Phys. Chem. B, 105 (2001) 11439 A.Watanabe,H.Kozuka,J.Phys.Chem.B,107(2003)12713.
一方、生成した電子(e−)15は、半導体電極1中の基材2に移動した後、外部短絡線10を通り対極9に移動する。その際BiVO4の伝導体は水素の発生電位0V(vs.SHE)よりも高いため、バイアス電位をかけて電子のエネルギを高くする。この電子15は、対極9上に水を還元し、化2に示す反応によって水素17を生成する。
この結果、水が分解されて、半導体電極1(作用極)において酸素が生成し、対極7において水素が生成する。
2…基材,
3…半導体層,
4…金属イオン層,
Claims (9)
- 半導体材料から形成される半導体層と、前記半導体層上に設けられた金属元素イオンから形成される金属イオン層と、を含むことを特徴とする半導体電極。
- 前記金属元素イオンは、遷移金属イオンの中から選択される少なくとも一種であることを特徴とする請求項1記載の半導体電極。
- 前記半導体材料は、BiまたはVの少なくとも一方の元素を含むことを特徴とする請求項1又は2記載の半導体電極。
- 前記半導体材料は、BiVO4であることを特徴とする請求項1乃至3のいずれか1項に記載の半導体電極。
- 前記半導体材料は、LaをドープしたBiVO4であることを特徴とする請求項1乃至4のいずれか1項に記載の半導体電極。
- 前記金属元素イオンは、Ag+、Cr3+ 、Pd2+、Au3+、Rh3+、Fe3+ の中から選択される少なくとも一種であることを特徴とする請求項4又は5記載の半導体電極。
- 前記金属イオンを含む溶液中に、前記半導体材料から形成される半導体層を1〜20時間浸漬して得られたことを特徴とする請求項1乃至6のいずれか1項に記載の半導体電極。
- 半導体材料から形成される半導体層と、前記半導体層上に設けられた金属元素イオンから形成される金属イオン層と、を含む半導体電極に光を照射して、得られた光エネルギにより光触媒反応を起こすことを特徴とするエネルギ変換システム。
- 前記半導体電極に光を照射して得られた光エネルギから水を分解して水素を製造することを特徴とする請求項8記載のエネルギ変換システム。
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Cited By (11)
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JP2014017080A (ja) * | 2012-07-06 | 2014-01-30 | National Institute Of Advanced Industrial & Technology | 可視光応答性の半導体光電極の安定化方法及び該方法を用いた水分解反応装置 |
JP2014015642A (ja) * | 2012-07-06 | 2014-01-30 | National Institute Of Advanced Industrial & Technology | 可視光応答性半導体光電極 |
JP2015009206A (ja) * | 2013-06-28 | 2015-01-19 | 独立行政法人産業技術総合研究所 | 可視光応答性組成物とこれを用いた光電極、光触媒、光センサー |
JP2015200016A (ja) * | 2014-03-31 | 2015-11-12 | 富士フイルム株式会社 | 水分解用光電極、水分解装置 |
JP2016089250A (ja) * | 2014-11-10 | 2016-05-23 | 国立研究開発法人産業技術総合研究所 | 光エネルギーの利用方法および光エネルギーの利用装置 |
JP2016089249A (ja) * | 2014-11-10 | 2016-05-23 | 国立研究開発法人産業技術総合研究所 | 光エネルギーの利用方法および光エネルギーの利用装置 |
JP2016209811A (ja) * | 2015-05-08 | 2016-12-15 | 国立研究開発法人物質・材料研究機構 | 光触媒複合体材料およびその製造方法 |
CN107324441A (zh) * | 2017-07-07 | 2017-11-07 | 黄河科技学院 | 镍铁羟基氧化物修饰钒酸铋光电极及其制备方法、应用 |
US10406516B2 (en) | 2012-03-08 | 2019-09-10 | The University Of Tokyo | Electrode for water-splitting reaction and method for producing the same |
CN110586068A (zh) * | 2019-09-06 | 2019-12-20 | 西安建筑科技大学 | 一种镱离子掺杂改性BiVO4光电催化电极的制备方法、产品及其应用 |
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CN104353473B (zh) * | 2014-10-29 | 2016-08-24 | 浙江师范大学 | 一种制备多孔BiVO4/AgCl杂化微球的方法 |
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JPS6265743A (ja) * | 1985-09-14 | 1987-03-25 | Agency Of Ind Science & Technol | 光触媒活性を有する亜鉛化合物 |
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Cited By (13)
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US10406516B2 (en) | 2012-03-08 | 2019-09-10 | The University Of Tokyo | Electrode for water-splitting reaction and method for producing the same |
JP2014015642A (ja) * | 2012-07-06 | 2014-01-30 | National Institute Of Advanced Industrial & Technology | 可視光応答性半導体光電極 |
JP2014017080A (ja) * | 2012-07-06 | 2014-01-30 | National Institute Of Advanced Industrial & Technology | 可視光応答性の半導体光電極の安定化方法及び該方法を用いた水分解反応装置 |
JP2015009206A (ja) * | 2013-06-28 | 2015-01-19 | 独立行政法人産業技術総合研究所 | 可視光応答性組成物とこれを用いた光電極、光触媒、光センサー |
JP2015200016A (ja) * | 2014-03-31 | 2015-11-12 | 富士フイルム株式会社 | 水分解用光電極、水分解装置 |
JP2016089249A (ja) * | 2014-11-10 | 2016-05-23 | 国立研究開発法人産業技術総合研究所 | 光エネルギーの利用方法および光エネルギーの利用装置 |
JP2016089250A (ja) * | 2014-11-10 | 2016-05-23 | 国立研究開発法人産業技術総合研究所 | 光エネルギーの利用方法および光エネルギーの利用装置 |
JP2016209811A (ja) * | 2015-05-08 | 2016-12-15 | 国立研究開発法人物質・材料研究機構 | 光触媒複合体材料およびその製造方法 |
CN107324441A (zh) * | 2017-07-07 | 2017-11-07 | 黄河科技学院 | 镍铁羟基氧化物修饰钒酸铋光电极及其制备方法、应用 |
CN107324441B (zh) * | 2017-07-07 | 2019-08-20 | 黄河科技学院 | 镍铁羟基氧化物修饰钒酸铋光电极及其制备方法、应用 |
JP2020082066A (ja) * | 2018-11-27 | 2020-06-04 | 深▲せん▼市名剣日用品有限公司 | 汚水処理装置 |
CN110586068A (zh) * | 2019-09-06 | 2019-12-20 | 西安建筑科技大学 | 一种镱离子掺杂改性BiVO4光电催化电极的制备方法、产品及其应用 |
CN110586068B (zh) * | 2019-09-06 | 2022-03-25 | 西安建筑科技大学 | 一种镱离子掺杂改性BiVO4光电催化电极的制备方法、产品及其应用 |
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