JP2007027419A - 露光装置 - Google Patents

露光装置 Download PDF

Info

Publication number
JP2007027419A
JP2007027419A JP2005207528A JP2005207528A JP2007027419A JP 2007027419 A JP2007027419 A JP 2007027419A JP 2005207528 A JP2005207528 A JP 2005207528A JP 2005207528 A JP2005207528 A JP 2005207528A JP 2007027419 A JP2007027419 A JP 2007027419A
Authority
JP
Japan
Prior art keywords
pattern
exposure apparatus
polarization
mask
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005207528A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007027419A5 (enExample
Inventor
Masaru Osawa
大 大沢
Shiyouritsu Okubo
彰律 大久保
Kenji Yamazoe
賢治 山添
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005207528A priority Critical patent/JP2007027419A/ja
Priority to US11/457,168 priority patent/US7379151B2/en
Publication of JP2007027419A publication Critical patent/JP2007027419A/ja
Publication of JP2007027419A5 publication Critical patent/JP2007027419A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005207528A 2005-07-15 2005-07-15 露光装置 Withdrawn JP2007027419A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005207528A JP2007027419A (ja) 2005-07-15 2005-07-15 露光装置
US11/457,168 US7379151B2 (en) 2005-07-15 2006-07-13 Exposure apparatus comprising cleaning apparatus for cleaning mask with laser beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005207528A JP2007027419A (ja) 2005-07-15 2005-07-15 露光装置

Publications (2)

Publication Number Publication Date
JP2007027419A true JP2007027419A (ja) 2007-02-01
JP2007027419A5 JP2007027419A5 (enExample) 2008-08-28

Family

ID=37661359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005207528A Withdrawn JP2007027419A (ja) 2005-07-15 2005-07-15 露光装置

Country Status (2)

Country Link
US (1) US7379151B2 (enExample)
JP (1) JP2007027419A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012004158A (ja) * 2010-06-14 2012-01-05 Nikon Corp 洗浄方法、洗浄装置、露光方法、露光装置およびデバイス製造方法。
JP5110085B2 (ja) * 2007-08-16 2012-12-26 旭硝子株式会社 ガラス基板表面から異物を除去する方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005144487A (ja) * 2003-11-13 2005-06-09 Seiko Epson Corp レーザ加工装置及びレーザ加工方法
US20070256703A1 (en) * 2006-05-03 2007-11-08 Asahi Glass Company, Limited Method for removing contaminant from surface of glass substrate
DE102009045008A1 (de) * 2008-10-15 2010-04-29 Carl Zeiss Smt Ag EUV-Lithographievorrichtung und Verfahren zum Bearbeiten einer Maske
US9607833B2 (en) * 2015-01-30 2017-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for photomask particle detection
US11600484B2 (en) * 2019-08-22 2023-03-07 Taiwan Semiconductor Manufacturing Company Ltd. Cleaning method, semiconductor manufacturing method and a system thereof
US11687012B2 (en) * 2021-06-25 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Reduce mask defect impact by contamination decompose
DE102021120747B4 (de) * 2021-08-10 2024-07-11 Carl Zeiss Sms Ltd. Verfahren zur Entfernung eines Partikels von einem Maskensystem

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3721940A1 (de) * 1987-07-02 1989-01-12 Ibm Deutschland Entfernen von partikeln von oberflaechen fester koerper durch laserbeschuss
JPS6412526U (enExample) 1987-07-13 1989-01-23
US5161059A (en) * 1987-09-21 1992-11-03 Massachusetts Institute Of Technology High-efficiency, multilevel, diffractive optical elements
US5024968A (en) 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
EP1429190B1 (en) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
US20040248043A1 (en) * 2003-06-03 2004-12-09 Nikon Corporation Exposure method, exposure apparatus and device manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5110085B2 (ja) * 2007-08-16 2012-12-26 旭硝子株式会社 ガラス基板表面から異物を除去する方法
JP2012004158A (ja) * 2010-06-14 2012-01-05 Nikon Corp 洗浄方法、洗浄装置、露光方法、露光装置およびデバイス製造方法。

Also Published As

Publication number Publication date
US20070013892A1 (en) 2007-01-18
US7379151B2 (en) 2008-05-27

Similar Documents

Publication Publication Date Title
US20090020137A1 (en) Cleaning apparatus and method, exposure apparatus having the cleaning apparatus, and device manufacturing method
JP4340613B2 (ja) リソグラフィック装置及びデバイス製造方法
JP4473811B2 (ja) リソグラフィ装置およびデバイス製造方法
JP2005235959A (ja) 光発生装置及び露光装置
TW200528931A (en) Lithographic apparatus and device manufacturing method
JP5161197B2 (ja) リソグラフィ装置およびデバイス製造方法
US8149378B2 (en) Cleaning apparatus for exposure apparatus and exposure apparatus
JP4458323B2 (ja) 保持装置、当該保持装置を有する露光装置、及びデバイス製造方法
JP2006216733A (ja) 露光装置、光学素子の製造方法及びデバイス製造方法
JP2007027419A (ja) 露光装置
JP2004228456A (ja) 露光装置
JP4778542B2 (ja) リソグラフィ装置、放射システム、デバイス製造方法、及び放射生成方法
JP4018564B2 (ja) 光学系、及びそれを用いた露光装置、デバイスの製造方法
JP4446996B2 (ja) 放射システムおよびリソグラフィ装置
JP3588095B2 (ja) リトグラフ投影装置、装置の製造方法および光学要素を製造する方法
JP2008300683A (ja) 洗浄装置及び方法、洗浄装置を有する露光装置
TWI307115B (en) Exposure method and apparatus
TW201915606A (zh) 倍縮光罩之檢測方法
US7414240B2 (en) Particle remover, exposure apparatus having the same, and device manufacturing method
KR102656123B1 (ko) 결함 최적화를 위한 레티클 배치의 제어
JP4393227B2 (ja) 露光装置、デバイスの製造方法、露光装置の製造方法
JP4332146B2 (ja) リソグラフィ装置及びデバイス製造方法
JP4393226B2 (ja) 光学系及びそれを用いた露光装置、デバイスの製造方法
JP2007183120A (ja) 多層膜ミラー、製造方法、露光装置及びデバイス製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080714

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080714

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20101027