JP2007027086A - 誘導結合型プラズマ処理装置 - Google Patents
誘導結合型プラズマ処理装置 Download PDFInfo
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- JP2007027086A JP2007027086A JP2006079044A JP2006079044A JP2007027086A JP 2007027086 A JP2007027086 A JP 2007027086A JP 2006079044 A JP2006079044 A JP 2006079044A JP 2006079044 A JP2006079044 A JP 2006079044A JP 2007027086 A JP2007027086 A JP 2007027086A
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- inductively coupled
- plasma processing
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- 238000009616 inductively coupled plasma Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000006243 chemical reaction Methods 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims description 10
- 238000005086 pumping Methods 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 6
- 230000005684 electric field Effects 0.000 description 9
- 230000006698 induction Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 4
- 208000011117 substance-related disease Diseases 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】反応チャンバ10と、前記反応チャンバ10内にプラズマ空間を形成してその内部に被処理基板130を支持する基板ホルダー140aと、前記基板ホルダー140a側面に具備されるシールド140bと、前記基板下部の所定領域に形成される複数の処理ガス流入口160と、前記反応チャンバ10の下部面に設置された高周波電力が印加される扇形アンテナ190,191と、を具備する。
【選択図】図1
Description
100 容器部、
110、120 高周波電源、
111、121:整合回路、
130 被処理基板、
140a シールド、
150 下部電極、
160 流入口、
170 流出口、
171 ポンピングポート、
180 ウィンドウ、
190、191 扇形アンテナ。
Claims (10)
- 反応チャンバと、
前記反応チャンバ内にプラズマ空間を形成してその内部に被処理基板を支持する基板ホルダーと、
前記基板ホルダー側面に具備されるシールドと、
前記基板下部の所定領域に形成される複数の処理ガス流入口と、
前記反応チャンバの下部面に設置された高周波電力が印加される扇形アンテナと、を具備することを特徴とする誘導結合型プラズマ処理装置。 - 前記扇形アンテナは、前記基板より大きく形成されることを特徴とする請求項1に記載の誘導結合型プラズマ処理装置。
- 前記シールドは、網目構造または均一にホールが形成された構造を持つことを特徴とする請求項1に記載の誘導結合型プラズマ処理装置。
- 前記シールドは、プラズマが前記反応チャンバ上部に流れることを防止することを特徴とする請求項3に記載の誘導結合型プラズマ処理装置。
- 前記基板ホルダーと前記シールドは、上下移動することができることを特徴とする請求項1に記載の誘導結合型プラズマ処理装置。
- 前記ウィンドウは、セラミックスまたは石英からなることを特徴とする請求項1に記載の誘導結合型プラズマ処理装置。
- 前記ウィンドウは、前記基板を所定数分割された大きさであることを特徴とする請求項6に記載の誘導結合型プラズマ処理装置。
- 前記所定数分割は、
前記基板の1分割ないし16分割であることを特徴とする請求項7に記載の誘導結合型プラズマ処理装置。 - 前記基板上部に流出口をさらに含むことを特徴とする請求項1に記載の誘導結合型プラズマ処理装置。
- 前記流出口は、ポンピングポートと連結されたことを特徴とする請求項9に記載の誘導結合型プラズマ処理装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0066024 | 2005-07-20 | ||
KR1020050066024A KR100897176B1 (ko) | 2005-07-20 | 2005-07-20 | 유도 결합형 플라즈마 처리 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007027086A true JP2007027086A (ja) | 2007-02-01 |
JP4698454B2 JP4698454B2 (ja) | 2011-06-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006079044A Active JP4698454B2 (ja) | 2005-07-20 | 2006-03-22 | 誘導結合型プラズマ処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070017637A1 (ja) |
JP (1) | JP4698454B2 (ja) |
KR (1) | KR100897176B1 (ja) |
CN (1) | CN1901774A (ja) |
TW (1) | TW200711542A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016541101A (ja) * | 2013-09-27 | 2016-12-28 | インデオテク・ソシエテ・アノニム | プラズマ反応容器及び組立体並びにプラズマ処理を実行する方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7906180B2 (en) * | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US8377209B2 (en) | 2008-03-12 | 2013-02-19 | Applied Materials, Inc. | Linear plasma source for dynamic (moving substrate) plasma processing |
US8415010B2 (en) * | 2008-10-20 | 2013-04-09 | Molecular Imprints, Inc. | Nano-imprint lithography stack with enhanced adhesion between silicon-containing and non-silicon containing layers |
CN103258581A (zh) * | 2013-04-28 | 2013-08-21 | 大连民族学院 | 一种等离子体辐照平台 |
CN103269557A (zh) * | 2013-04-28 | 2013-08-28 | 大连民族学院 | 一种射频离子源 |
CN104157321B (zh) * | 2014-08-04 | 2017-02-15 | 大连民族学院 | 低能大流强材料辐照装置 |
TWI620228B (zh) | 2016-12-29 | 2018-04-01 | 財團法人工業技術研究院 | 電漿處理裝置與電漿處理方法 |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05152256A (ja) * | 1991-09-30 | 1993-06-18 | Fuji Electric Co Ltd | ドライクリーニング方法 |
JPH07122543A (ja) * | 1993-10-20 | 1995-05-12 | Tokyo Electron Ltd | プラズマエッチング装置の制御方法 |
JPH07321097A (ja) * | 1994-05-24 | 1995-12-08 | Tokyo Electron Ltd | 処理装置及び該処理装置に用いられるリング体もしくはバッフル板の洗浄方法 |
JPH08260153A (ja) * | 1995-03-20 | 1996-10-08 | Toshiba Mach Co Ltd | 誘導結合プラズマcvd装置 |
JPH1012396A (ja) * | 1996-06-18 | 1998-01-16 | Nec Corp | プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置 |
JPH1140398A (ja) * | 1997-07-23 | 1999-02-12 | Kokusai Electric Co Ltd | プラズマ生成装置 |
JPH11111700A (ja) * | 1988-04-25 | 1999-04-23 | Applied Materials Inc | 磁場エンハンス型プラズマエッチ反応器 |
JP2000286235A (ja) * | 1999-03-30 | 2000-10-13 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2001223099A (ja) * | 2000-02-09 | 2001-08-17 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2002151421A (ja) * | 2000-05-24 | 2002-05-24 | Applied Materials Inc | 複数の接地経路ブリッジを有するプラズマ補助半導体基板処理チャンバ |
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JP2004140363A (ja) * | 2002-10-15 | 2004-05-13 | Samsung Electronics Co Ltd | 蛇行コイルアンテナを具備した誘導結合プラズマ発生装置 |
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JP2004363418A (ja) * | 2003-06-06 | 2004-12-24 | Tokyo Electron Ltd | プラズマ処理装置 |
WO2005048322A2 (en) * | 2003-11-12 | 2005-05-26 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
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-
2005
- 2005-07-20 KR KR1020050066024A patent/KR100897176B1/ko active IP Right Grant
-
2006
- 2006-03-22 JP JP2006079044A patent/JP4698454B2/ja active Active
- 2006-07-10 TW TW095125055A patent/TW200711542A/zh unknown
- 2006-07-18 US US11/489,656 patent/US20070017637A1/en not_active Abandoned
- 2006-07-19 CN CNA2006101063291A patent/CN1901774A/zh active Pending
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11111700A (ja) * | 1988-04-25 | 1999-04-23 | Applied Materials Inc | 磁場エンハンス型プラズマエッチ反応器 |
JPH05152256A (ja) * | 1991-09-30 | 1993-06-18 | Fuji Electric Co Ltd | ドライクリーニング方法 |
JPH07122543A (ja) * | 1993-10-20 | 1995-05-12 | Tokyo Electron Ltd | プラズマエッチング装置の制御方法 |
JPH07321097A (ja) * | 1994-05-24 | 1995-12-08 | Tokyo Electron Ltd | 処理装置及び該処理装置に用いられるリング体もしくはバッフル板の洗浄方法 |
JPH08260153A (ja) * | 1995-03-20 | 1996-10-08 | Toshiba Mach Co Ltd | 誘導結合プラズマcvd装置 |
JPH1012396A (ja) * | 1996-06-18 | 1998-01-16 | Nec Corp | プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置 |
JPH1140398A (ja) * | 1997-07-23 | 1999-02-12 | Kokusai Electric Co Ltd | プラズマ生成装置 |
JP2000286235A (ja) * | 1999-03-30 | 2000-10-13 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2001223099A (ja) * | 2000-02-09 | 2001-08-17 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2002151421A (ja) * | 2000-05-24 | 2002-05-24 | Applied Materials Inc | 複数の接地経路ブリッジを有するプラズマ補助半導体基板処理チャンバ |
JP2003224114A (ja) * | 2001-09-28 | 2003-08-08 | Tokyo Electron Ltd | プラズマ処理システム |
JP2004140363A (ja) * | 2002-10-15 | 2004-05-13 | Samsung Electronics Co Ltd | 蛇行コイルアンテナを具備した誘導結合プラズマ発生装置 |
JP2004363316A (ja) * | 2003-06-04 | 2004-12-24 | Tokyo Electron Ltd | プラズマ処理方法 |
JP2004363418A (ja) * | 2003-06-06 | 2004-12-24 | Tokyo Electron Ltd | プラズマ処理装置 |
WO2005048322A2 (en) * | 2003-11-12 | 2005-05-26 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016541101A (ja) * | 2013-09-27 | 2016-12-28 | インデオテク・ソシエテ・アノニム | プラズマ反応容器及び組立体並びにプラズマ処理を実行する方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100897176B1 (ko) | 2009-05-14 |
CN1901774A (zh) | 2007-01-24 |
US20070017637A1 (en) | 2007-01-25 |
JP4698454B2 (ja) | 2011-06-08 |
TW200711542A (en) | 2007-03-16 |
KR20070010989A (ko) | 2007-01-24 |
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