JP2007005792A - シーモスイメージセンサー - Google Patents
シーモスイメージセンサー Download PDFInfo
- Publication number
- JP2007005792A JP2007005792A JP2006166845A JP2006166845A JP2007005792A JP 2007005792 A JP2007005792 A JP 2007005792A JP 2006166845 A JP2006166845 A JP 2006166845A JP 2006166845 A JP2006166845 A JP 2006166845A JP 2007005792 A JP2007005792 A JP 2007005792A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- receiving element
- floating diffusion
- diffusion region
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000002955 isolation Methods 0.000 claims description 21
- 241000206672 Gelidium Species 0.000 claims description 19
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 238000000926 separation method Methods 0.000 abstract 2
- 239000000969 carrier Substances 0.000 description 16
- 230000005669 field effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】本発明の一つの実施形態によるシーモスイメージセンサーは、基板に形成された受光素子、受光素子と水平方向に離隔されてあり、受光素子を取り囲むように基板に形成されたフローティングディフュージョン領域、受光素子及びフローティングディフュージョン領域と垂直方向に離隔されて形成されて、受光素子及びフローティングディフュージョン領域の隣接境界領域でそれぞれ重畳されるように形成されたトランスファーゲート及びフローティングディフュージョン領域と水平方向に離隔されて形成された素子分離酸化膜を含む。
【選択図】図3
Description
ここで、フローティングディフュージョン領域の平面は四角形状で、中心部に円形の中空を持つことが望ましい。
30 : トランスファーゲート 40 : フローティングディフュージョン領域
50 : 素子分離酸化膜
Claims (7)
- 基板に形成された受光素子と、
前記受光素子と水平方向に離隔されてあり、 前記受光素子を取り囲むように前記基板に形成されたフローティングディフュージョン(floating diffusion)領域と、
前記受光素子及び前記フローティングディフュージョン領域と垂直方向に離隔されて形成されて、 前記受光素子及び前記フローティングディフュージョン領域の隣接境界領域でそれぞれ重畳されるように形成されたトランスファーゲートと、
前記フローティングディフュージョン領域と水平方向に離隔されて形成された素子分離酸化膜を含むことを特徴とするシーモスイメージセンサー。 - 前記受光素子の平面は円または楕円形状であることを特徴とする、請求項1記載のシーモスイメージセンサー。
- 前記トランスファーゲートは中心部に円形の中空を持つことを特徴とする、請求項1記載のシーモスイメージセンサー。
- 前記トランスファーゲートの平面はリング形状であることを特徴とする、 請求項3記載のシーモスイメージセンサー。
- 前記受光素子、前記トランスファーゲート、 前記フローティングディフュージョン領域及び前記素子分離酸化膜はそれぞれ対称的に形成されたことを特徴とする、 請求項1記載のシーモスイメージセンサー。
- 前記フローティングディフュージョン領域の平面は四角形状であることを特徴とする、請求項1記載のシーモスイメージセンサー。
- 前記フローティングディフュージョン領域は中心部に円形の中空を持つことを特徴とする、請求項6記載のシーモスイメージセンサー。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050055015A KR100638260B1 (ko) | 2005-06-24 | 2005-06-24 | 씨모스 이미지 센서 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007005792A true JP2007005792A (ja) | 2007-01-11 |
JP4378363B2 JP4378363B2 (ja) | 2009-12-02 |
Family
ID=37566312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006166845A Expired - Fee Related JP4378363B2 (ja) | 2005-06-24 | 2006-06-16 | シーモスイメージセンサー |
Country Status (4)
Country | Link |
---|---|
US (1) | US20060289911A1 (ja) |
JP (1) | JP4378363B2 (ja) |
KR (1) | KR100638260B1 (ja) |
CN (1) | CN100536152C (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016152272A (ja) * | 2015-02-16 | 2016-08-22 | エスアイアイ・セミコンダクタ株式会社 | 受光素子を有する光検出半導体装置 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2095424B1 (en) * | 2006-11-29 | 2020-04-22 | Semiconductor Components Industries, LLC | Pixel structure having shielded storage node |
CN101796643B (zh) | 2007-09-05 | 2013-04-10 | 国立大学法人东北大学 | 固体摄像元件及其制造方法 |
EP2445008B1 (en) * | 2008-08-11 | 2015-03-04 | Honda Motor Co., Ltd. | Imaging device and image forming method |
EP2216817B1 (fr) * | 2009-02-05 | 2014-01-08 | STMicroelectronics (Crolles 2) SAS | Capteur d'images à semiconducteur à éclairement par la face arrière |
US7977717B1 (en) * | 2009-02-25 | 2011-07-12 | ON Semiconductor Trading, Ltd | Pixel sensing circuit |
JP5471174B2 (ja) * | 2009-08-28 | 2014-04-16 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
KR101608903B1 (ko) | 2009-11-16 | 2016-04-20 | 삼성전자주식회사 | 적외선 이미지 센서 |
JP6021613B2 (ja) * | 2012-11-29 | 2016-11-09 | キヤノン株式会社 | 撮像素子、撮像装置、および、撮像システム |
JP2015012240A (ja) * | 2013-07-01 | 2015-01-19 | ソニー株式会社 | 撮像素子および電子機器 |
CN104134676A (zh) * | 2014-07-23 | 2014-11-05 | 中国航天科技集团公司第九研究院第七七一研究所 | 基于辐射环境应用的快速电荷转移像素结构 |
US10971533B2 (en) | 2018-01-29 | 2021-04-06 | Stmicroelectronics (Crolles 2) Sas | Vertical transfer gate with charge transfer and charge storage capabilities |
FR3098075A1 (fr) | 2019-06-28 | 2021-01-01 | Stmicroelectronics (Crolles 2) Sas | Pixel et son procédé de commande |
US11282883B2 (en) * | 2019-12-13 | 2022-03-22 | Globalfoundries U.S. Inc. | Trench-based photodiodes |
US11527563B2 (en) * | 2020-04-20 | 2022-12-13 | Taiwan Semiconductor Manufacturing Company Limited | Photodetector using a buried gate electrode for a transfer transistor and methods of manufacturing the same |
FR3127329B1 (fr) * | 2021-09-17 | 2024-01-26 | St Microelectronics Crolles 2 Sas | Pixel d'image et de profondeur |
-
2005
- 2005-06-24 KR KR1020050055015A patent/KR100638260B1/ko not_active IP Right Cessation
-
2006
- 2006-06-16 JP JP2006166845A patent/JP4378363B2/ja not_active Expired - Fee Related
- 2006-06-22 US US11/472,389 patent/US20060289911A1/en not_active Abandoned
- 2006-06-23 CN CNB2006100900208A patent/CN100536152C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016152272A (ja) * | 2015-02-16 | 2016-08-22 | エスアイアイ・セミコンダクタ株式会社 | 受光素子を有する光検出半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
KR100638260B1 (ko) | 2006-10-25 |
CN100536152C (zh) | 2009-09-02 |
CN1959996A (zh) | 2007-05-09 |
JP4378363B2 (ja) | 2009-12-02 |
US20060289911A1 (en) | 2006-12-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4378363B2 (ja) | シーモスイメージセンサー | |
KR102263042B1 (ko) | 픽셀, 상기 픽셀을 포함하는 이미지 센서, 및 상기 픽셀을 포함하는 이미지 처리 시스템 | |
US9160955B2 (en) | Solid-state imaging device and camera | |
JP5539104B2 (ja) | 光電変換装置およびそれを用いた撮像システム | |
US20140159129A1 (en) | Near-infrared-visible light adjustable image sensor | |
JP3727639B2 (ja) | 固体撮像装置 | |
JP6650668B2 (ja) | 固体撮像装置 | |
US8053821B2 (en) | Image sensor with high conversion efficiency | |
KR102033610B1 (ko) | 이미지 센서 및 이의 형성 방법 | |
KR101588459B1 (ko) | 이미지 센서 및 그 구동 방법 | |
JP2007318093A (ja) | Cmosイメージセンサ及びその製造方法 | |
KR20070070530A (ko) | 씨모스 이미지 센서 및 그 제조방법 | |
KR20050115813A (ko) | 이미지 센서 및 그 제조 방법 | |
KR102274182B1 (ko) | 반도체 장치와 이를 위한 제조 방법 | |
KR20060093385A (ko) | 이미지센서 | |
CN101567337A (zh) | Cmos图像传感器及其制造方法 | |
CN103996686A (zh) | 能提高信号摆幅的cmos图像传感器像素及其制作方法 | |
JP5294534B2 (ja) | Cmosイメージセンサー及びその製造方法 | |
JP2005311496A (ja) | 固体撮像装置 | |
KR101493870B1 (ko) | 신호 대 잡음 비가 개선된 이미지 소자 및 그 제조방법 | |
JP4351667B2 (ja) | 電荷検出装置の製造方法 | |
KR100731125B1 (ko) | 씨모스 이미지 센서 | |
KR20100062098A (ko) | 이미지 센서 | |
KR20040093295A (ko) | 시모스 이미지센서의 포토다이오드의 제조방법 | |
KR20030052635A (ko) | 시모스 이미지센서 및 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090424 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090428 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090722 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090825 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090914 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120918 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130918 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |