JP2006528835A5 - - Google Patents

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Publication number
JP2006528835A5
JP2006528835A5 JP2006520714A JP2006520714A JP2006528835A5 JP 2006528835 A5 JP2006528835 A5 JP 2006528835A5 JP 2006520714 A JP2006520714 A JP 2006520714A JP 2006520714 A JP2006520714 A JP 2006520714A JP 2006528835 A5 JP2006528835 A5 JP 2006528835A5
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JP
Japan
Prior art keywords
exposure apparatus
projection exposure
immersion
projection
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006520714A
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English (en)
Japanese (ja)
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JP2006528835A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/EP2004/007456 external-priority patent/WO2005015315A2/de
Publication of JP2006528835A publication Critical patent/JP2006528835A/ja
Publication of JP2006528835A5 publication Critical patent/JP2006528835A5/ja
Pending legal-status Critical Current

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JP2006520714A 2003-07-24 2004-07-08 マイクロリソグラフィ投影露光装置および浸漬液体を浸漬空間へ導入する方法 Pending JP2006528835A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10333644 2003-07-24
PCT/EP2004/007456 WO2005015315A2 (de) 2003-07-24 2004-07-08 Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum

Publications (2)

Publication Number Publication Date
JP2006528835A JP2006528835A (ja) 2006-12-21
JP2006528835A5 true JP2006528835A5 (enExample) 2007-09-13

Family

ID=34129463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006520714A Pending JP2006528835A (ja) 2003-07-24 2004-07-08 マイクロリソグラフィ投影露光装置および浸漬液体を浸漬空間へ導入する方法

Country Status (3)

Country Link
US (1) US20070132969A1 (enExample)
JP (1) JP2006528835A (enExample)
WO (1) WO2005015315A2 (enExample)

Families Citing this family (29)

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US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2005136374A (ja) * 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
EP2267536B1 (en) * 2003-10-28 2017-04-19 ASML Netherlands B.V. Lithographic apparatus
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
EP1531362A3 (en) * 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
WO2005104195A1 (ja) * 2004-04-19 2005-11-03 Nikon Corporation 露光装置及びデバイス製造方法
US7481867B2 (en) * 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
KR101245070B1 (ko) * 2004-06-21 2013-03-18 가부시키가이샤 니콘 노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7414699B2 (en) * 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7378025B2 (en) * 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US7262422B2 (en) * 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
WO2007023813A1 (ja) * 2005-08-23 2007-03-01 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
US20070058263A1 (en) * 2005-09-13 2007-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for immersion lithography
NL1030447C2 (nl) * 2005-11-16 2007-05-21 Taiwan Semiconductor Mfg Inrichting en werkwijze voor megasonische immersielithografie belichting.
US7633073B2 (en) * 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US8947629B2 (en) * 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7900641B2 (en) * 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
JP6456238B2 (ja) 2015-05-14 2019-01-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN107991384B (zh) * 2017-12-21 2023-10-13 浙江启尔机电技术有限公司 一种微管内气液两相流流型的检测装置及方法
DE102020206695A1 (de) * 2020-05-28 2021-04-15 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Reduktion von Vibrationen bedingt durch Gasblasen im Temperierfluid in mikrolithographischen Projektionsbelichtungsanlagen
CN112684674B (zh) * 2020-12-29 2024-08-06 浙江启尔机电技术有限公司 浸液供给回收系统以及浸没流场初始建立方法

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JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
JPH11244607A (ja) * 1998-03-03 1999-09-14 Mitsubishi Rayon Co Ltd 薬液の脱気方法及び脱気装置
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000068197A (ja) * 1998-08-20 2000-03-03 Ishikawa Seisakusho Ltd 気泡発生防止兼用気泡除去装置
JP2003022955A (ja) * 2001-07-09 2003-01-24 Canon Inc 露光装置
KR101345474B1 (ko) * 2003-03-25 2013-12-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
DE10324477A1 (de) * 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
EP1489461A1 (en) * 2003-06-11 2004-12-22 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
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US20060001851A1 (en) * 2004-07-01 2006-01-05 Grant Robert B Immersion photolithography system

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