JP2006526292A - 基板研磨装置 - Google Patents

基板研磨装置 Download PDF

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Publication number
JP2006526292A
JP2006526292A JP2006519167A JP2006519167A JP2006526292A JP 2006526292 A JP2006526292 A JP 2006526292A JP 2006519167 A JP2006519167 A JP 2006519167A JP 2006519167 A JP2006519167 A JP 2006519167A JP 2006526292 A JP2006526292 A JP 2006526292A
Authority
JP
Japan
Prior art keywords
optical fiber
light
substrate
polishing
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006519167A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006526292A5 (enExample
Inventor
一人 廣川
洋一 小林
俊輔 中井
真朗 大田
康郎 佃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Shimadzu Corp
Original Assignee
Ebara Corp
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp, Shimadzu Corp filed Critical Ebara Corp
Publication of JP2006526292A publication Critical patent/JP2006526292A/ja
Publication of JP2006526292A5 publication Critical patent/JP2006526292A5/ja
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/08—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving liquid or pneumatic means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2006519167A 2003-05-21 2004-05-19 基板研磨装置 Pending JP2006526292A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003143526 2003-05-21
JP2003143527 2003-05-21
PCT/JP2004/007152 WO2004103636A2 (en) 2003-05-21 2004-05-19 Substrate polishing apparatus

Publications (2)

Publication Number Publication Date
JP2006526292A true JP2006526292A (ja) 2006-11-16
JP2006526292A5 JP2006526292A5 (enExample) 2007-02-08

Family

ID=33455528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006519167A Pending JP2006526292A (ja) 2003-05-21 2004-05-19 基板研磨装置

Country Status (8)

Country Link
US (2) US7101257B2 (enExample)
EP (1) EP1633528B1 (enExample)
JP (1) JP2006526292A (enExample)
KR (1) KR101052844B1 (enExample)
CN (1) CN1791491B (enExample)
DE (1) DE602004031295D1 (enExample)
TW (1) TWI271265B (enExample)
WO (1) WO2004103636A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019075520A (ja) * 2017-10-19 2019-05-16 株式会社荏原製作所 研磨装置、及び研磨方法
KR20220049596A (ko) 2019-08-29 2022-04-21 가부시키가이샤 에바라 세이사꾸쇼 연마 장치 및 연마 방법

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7101257B2 (en) * 2003-05-21 2006-09-05 Ebara Corporation Substrate polishing apparatus
US7777920B2 (en) * 2006-02-28 2010-08-17 Toshiba Tec Kabushiki Kaisha Image copier and image copying method
JP2014154874A (ja) * 2013-02-07 2014-08-25 Toshiba Corp 膜厚モニタ装置、研磨装置および膜厚モニタ方法
JP2015126179A (ja) * 2013-12-27 2015-07-06 株式会社荏原製作所 研磨終点検出方法、及び研磨終点検出装置
TWI597128B (zh) * 2014-01-10 2017-09-01 Ｓｕｍｃｏ股份有限公司 工件厚度的測定裝置、測定方法及工件的研磨裝置
KR20170039019A (ko) 2015-09-30 2017-04-10 서울바이오시스 주식회사 침대용 공기 정화기 및 광촉매-공기조화 모듈
TW201822953A (zh) * 2016-09-16 2018-07-01 美商應用材料股份有限公司 基於溝槽深度的電磁感應監控進行的過拋光
TWI733915B (zh) * 2016-10-10 2021-07-21 美商應用材料股份有限公司 控制基板的處理的方法，及其研磨系統和電腦程式產品
JP7022647B2 (ja) * 2018-05-08 2022-02-18 株式会社荏原製作所 光透過性部材、研磨パッドおよび基板研磨装置
CN112247819B (zh) * 2020-10-09 2022-08-19 无锡贝来钢管有限公司 大口径厚壁无缝钢管加工装置
CN115308140A (zh) * 2022-10-11 2022-11-08 杭州众硅电子科技有限公司 一种化学机械抛光的在线监测装置

Citations (2)

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JPH10229061A (ja) * 1997-02-13 1998-08-25 Nikon Corp 研磨量測定装置
JP2003522937A (ja) * 1999-12-23 2003-07-29 ケーエルエー−テンカー テクノロジィース コーポレイション 渦電流測定あるいは光学測定を利用して、メタライゼーション処理を実状態で監視する方法

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US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5657123A (en) 1994-09-16 1997-08-12 Mitsubishi Materials Corp. Film thickness measuring apparatus, film thickness measuring method and wafer polishing system measuring a film thickness in conjunction with a liquid tank
JPH08174411A (ja) 1994-12-22 1996-07-09 Ebara Corp ポリッシング装置
US6537133B1 (en) 1995-03-28 2003-03-25 Applied Materials, Inc. Method for in-situ endpoint detection for chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5762536A (en) * 1996-04-26 1998-06-09 Lam Research Corporation Sensors for a linear polisher
US5958148A (en) 1996-07-26 1999-09-28 Speedfam-Ipec Corporation Method for cleaning workpiece surfaces and monitoring probes during workpiece processing
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US6707540B1 (en) * 1999-12-23 2004-03-16 Kla-Tencor Corporation In-situ metalization monitoring using eddy current and optical measurements
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JP3878016B2 (ja) * 2001-12-28 2007-02-07 株式会社荏原製作所 基板研磨装置
US7175503B2 (en) * 2002-02-04 2007-02-13 Kla-Tencor Technologies Corp. Methods and systems for determining a characteristic of polishing within a zone on a specimen from combined output signals of an eddy current device
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US7101257B2 (en) * 2003-05-21 2006-09-05 Ebara Corporation Substrate polishing apparatus

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JPH10229061A (ja) * 1997-02-13 1998-08-25 Nikon Corp 研磨量測定装置
JP2003522937A (ja) * 1999-12-23 2003-07-29 ケーエルエー−テンカー テクノロジィース コーポレイション 渦電流測定あるいは光学測定を利用して、メタライゼーション処理を実状態で監視する方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019075520A (ja) * 2017-10-19 2019-05-16 株式会社荏原製作所 研磨装置、及び研磨方法
JP7141204B2 (ja) 2017-10-19 2022-09-22 株式会社荏原製作所 研磨装置、及び研磨方法
US11667007B2 (en) 2017-10-19 2023-06-06 Ebara Corporation Polishing apparatus and polishing method
KR20220049596A (ko) 2019-08-29 2022-04-21 가부시키가이샤 에바라 세이사꾸쇼 연마 장치 및 연마 방법

Also Published As

Publication number Publication date
US20070042679A1 (en) 2007-02-22
KR20060003907A (ko) 2006-01-11
EP1633528A4 (en) 2007-08-08
EP1633528B1 (en) 2011-02-02
KR101052844B1 (ko) 2011-07-29
WO2004103636A2 (en) 2004-12-02
TW200505633A (en) 2005-02-16
TWI271265B (en) 2007-01-21
EP1633528A2 (en) 2006-03-15
CN1791491A (zh) 2006-06-21
US20040235393A1 (en) 2004-11-25
US7101257B2 (en) 2006-09-05
CN1791491B (zh) 2010-04-28
US7547242B2 (en) 2009-06-16
DE602004031295D1 (de) 2011-03-17
WO2004103636A3 (en) 2005-02-17

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