TWI271265B - Substrate polishing apparatus - Google Patents
Substrate polishing apparatus Download PDFInfo
- Publication number
- TWI271265B TWI271265B TW093114210A TW93114210A TWI271265B TW I271265 B TWI271265 B TW I271265B TW 093114210 A TW093114210 A TW 093114210A TW 93114210 A TW93114210 A TW 93114210A TW I271265 B TWI271265 B TW I271265B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- substrate
- fiber
- emitting
- polishing
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 454
- 238000005498 polishing Methods 0.000 title claims abstract description 325
- 239000012530 fluid Substances 0.000 claims abstract description 198
- 238000005259 measurement Methods 0.000 claims abstract description 65
- 239000000835 fiber Substances 0.000 claims description 505
- 239000013307 optical fiber Substances 0.000 claims description 110
- 239000004065 semiconductor Substances 0.000 claims description 71
- 230000000903 blocking effect Effects 0.000 claims description 46
- 230000003287 optical effect Effects 0.000 claims description 46
- 238000005253 cladding Methods 0.000 claims description 18
- 239000002131 composite material Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 94
- 239000002002 slurry Substances 0.000 description 42
- 239000010408 film Substances 0.000 description 31
- 238000005286 illumination Methods 0.000 description 25
- 238000010586 diagram Methods 0.000 description 22
- 230000001681 protective effect Effects 0.000 description 12
- 238000012545 processing Methods 0.000 description 9
- 239000007787 solid Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000004744 fabric Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 206010011469 Crying Diseases 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 241000272517 Anseriformes Species 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000011440 grout Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000813 microbial effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007494 plate polishing Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- 239000008400 supply water Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/08—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving liquid or pneumatic means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003143527 | 2003-05-21 | ||
| JP2003143526 | 2003-05-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200505633A TW200505633A (en) | 2005-02-16 |
| TWI271265B true TWI271265B (en) | 2007-01-21 |
Family
ID=33455528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093114210A TWI271265B (en) | 2003-05-21 | 2004-05-20 | Substrate polishing apparatus |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7101257B2 (enExample) |
| EP (1) | EP1633528B1 (enExample) |
| JP (1) | JP2006526292A (enExample) |
| KR (1) | KR101052844B1 (enExample) |
| CN (1) | CN1791491B (enExample) |
| DE (1) | DE602004031295D1 (enExample) |
| TW (1) | TWI271265B (enExample) |
| WO (1) | WO2004103636A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7101257B2 (en) * | 2003-05-21 | 2006-09-05 | Ebara Corporation | Substrate polishing apparatus |
| US7777920B2 (en) * | 2006-02-28 | 2010-08-17 | Toshiba Tec Kabushiki Kaisha | Image copier and image copying method |
| JP2014154874A (ja) * | 2013-02-07 | 2014-08-25 | Toshiba Corp | 膜厚モニタ装置、研磨装置および膜厚モニタ方法 |
| JP2015126179A (ja) * | 2013-12-27 | 2015-07-06 | 株式会社荏原製作所 | 研磨終点検出方法、及び研磨終点検出装置 |
| KR101904062B1 (ko) * | 2014-01-10 | 2018-10-04 | 가부시키가이샤 사무코 | 워크의 두께 측정 장치, 측정 방법, 및 워크의 연마 장치 |
| KR20170039019A (ko) | 2015-09-30 | 2017-04-10 | 서울바이오시스 주식회사 | 침대용 공기 정화기 및 광촉매-공기조화 모듈 |
| TW201822953A (zh) * | 2016-09-16 | 2018-07-01 | 美商應用材料股份有限公司 | 基於溝槽深度的電磁感應監控進行的過拋光 |
| CN109844923B (zh) * | 2016-10-10 | 2023-07-11 | 应用材料公司 | 用于化学机械抛光的实时轮廓控制 |
| JP7141204B2 (ja) * | 2017-10-19 | 2022-09-22 | 株式会社荏原製作所 | 研磨装置、及び研磨方法 |
| JP7022647B2 (ja) * | 2018-05-08 | 2022-02-18 | 株式会社荏原製作所 | 光透過性部材、研磨パッドおよび基板研磨装置 |
| JP7403998B2 (ja) | 2019-08-29 | 2023-12-25 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
| CN112247819B (zh) * | 2020-10-09 | 2022-08-19 | 无锡贝来钢管有限公司 | 大口径厚壁无缝钢管加工装置 |
| CN115308140A (zh) * | 2022-10-11 | 2022-11-08 | 杭州众硅电子科技有限公司 | 一种化学机械抛光的在线监测装置 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5657123A (en) | 1994-09-16 | 1997-08-12 | Mitsubishi Materials Corp. | Film thickness measuring apparatus, film thickness measuring method and wafer polishing system measuring a film thickness in conjunction with a liquid tank |
| JPH08174411A (ja) | 1994-12-22 | 1996-07-09 | Ebara Corp | ポリッシング装置 |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US6537133B1 (en) | 1995-03-28 | 2003-03-25 | Applied Materials, Inc. | Method for in-situ endpoint detection for chemical mechanical polishing operations |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5762536A (en) * | 1996-04-26 | 1998-06-09 | Lam Research Corporation | Sensors for a linear polisher |
| US5958148A (en) | 1996-07-26 | 1999-09-28 | Speedfam-Ipec Corporation | Method for cleaning workpiece surfaces and monitoring probes during workpiece processing |
| JP3454658B2 (ja) | 1997-02-03 | 2003-10-06 | 大日本スクリーン製造株式会社 | 研磨処理モニター装置 |
| JPH10229061A (ja) * | 1997-02-13 | 1998-08-25 | Nikon Corp | 研磨量測定装置 |
| US6106662A (en) | 1998-06-08 | 2000-08-22 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
| US6361646B1 (en) | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
| US6334807B1 (en) * | 1999-04-30 | 2002-01-01 | International Business Machines Corporation | Chemical mechanical polishing in-situ end point system |
| DE10084915C2 (de) * | 1999-08-27 | 2003-12-24 | Asahi Chemical Ind | Polierkissen und Poliervorrichtung |
| US6628397B1 (en) * | 1999-09-15 | 2003-09-30 | Kla-Tencor | Apparatus and methods for performing self-clearing optical measurements |
| US6671051B1 (en) | 1999-09-15 | 2003-12-30 | Kla-Tencor | Apparatus and methods for detecting killer particles during chemical mechanical polishing |
| JP2001088021A (ja) * | 1999-09-22 | 2001-04-03 | Speedfam Co Ltd | 研磨終点検出機構付き研磨装置 |
| JP3854056B2 (ja) * | 1999-12-13 | 2006-12-06 | 株式会社荏原製作所 | 基板膜厚測定方法、基板膜厚測定装置、基板処理方法及び基板処理装置 |
| US6399501B2 (en) | 1999-12-13 | 2002-06-04 | Applied Materials, Inc. | Method and apparatus for detecting polishing endpoint with optical monitoring |
| US6433541B1 (en) * | 1999-12-23 | 2002-08-13 | Kla-Tencor Corporation | In-situ metalization monitoring using eddy current measurements during the process for removing the film |
| WO2001046684A1 (en) | 1999-12-23 | 2001-06-28 | Kla-Tencor Corporation | In-situ metalization monitoring using eddy current measurements and optical measurements |
| US6707540B1 (en) * | 1999-12-23 | 2004-03-16 | Kla-Tencor Corporation | In-situ metalization monitoring using eddy current and optical measurements |
| US6491569B2 (en) | 2001-04-19 | 2002-12-10 | Speedfam-Ipec Corporation | Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP |
| CN1414608A (zh) * | 2001-10-26 | 2003-04-30 | 矽统科技股份有限公司 | 晶圆的化学机械研磨装置 |
| US6599765B1 (en) * | 2001-12-12 | 2003-07-29 | Lam Research Corporation | Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection |
| JP3878016B2 (ja) * | 2001-12-28 | 2007-02-07 | 株式会社荏原製作所 | 基板研磨装置 |
| AU2003207834A1 (en) * | 2002-02-04 | 2003-09-02 | Kla-Tencor Technologies Corp. | Systems and methods for characterizing a polishing process |
| US6733368B1 (en) * | 2003-02-10 | 2004-05-11 | Seh America, Inc. | Method for lapping a wafer |
| US7101257B2 (en) * | 2003-05-21 | 2006-09-05 | Ebara Corporation | Substrate polishing apparatus |
-
2003
- 2003-07-14 US US10/617,789 patent/US7101257B2/en not_active Expired - Lifetime
-
2004
- 2004-05-19 US US10/558,257 patent/US7547242B2/en not_active Expired - Lifetime
- 2004-05-19 DE DE602004031295T patent/DE602004031295D1/de not_active Expired - Lifetime
- 2004-05-19 KR KR1020057022104A patent/KR101052844B1/ko not_active Expired - Lifetime
- 2004-05-19 WO PCT/JP2004/007152 patent/WO2004103636A2/en not_active Ceased
- 2004-05-19 CN CN200480013882XA patent/CN1791491B/zh not_active Expired - Lifetime
- 2004-05-19 EP EP04733975A patent/EP1633528B1/en not_active Expired - Lifetime
- 2004-05-19 JP JP2006519167A patent/JP2006526292A/ja active Pending
- 2004-05-20 TW TW093114210A patent/TWI271265B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN1791491B (zh) | 2010-04-28 |
| EP1633528A2 (en) | 2006-03-15 |
| US7101257B2 (en) | 2006-09-05 |
| US20040235393A1 (en) | 2004-11-25 |
| WO2004103636A2 (en) | 2004-12-02 |
| EP1633528A4 (en) | 2007-08-08 |
| JP2006526292A (ja) | 2006-11-16 |
| KR101052844B1 (ko) | 2011-07-29 |
| DE602004031295D1 (de) | 2011-03-17 |
| EP1633528B1 (en) | 2011-02-02 |
| WO2004103636A3 (en) | 2005-02-17 |
| CN1791491A (zh) | 2006-06-21 |
| TW200505633A (en) | 2005-02-16 |
| US7547242B2 (en) | 2009-06-16 |
| US20070042679A1 (en) | 2007-02-22 |
| KR20060003907A (ko) | 2006-01-11 |
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