DE602004031295D1 - Substratpoliergerät - Google Patents

Substratpoliergerät

Info

Publication number
DE602004031295D1
DE602004031295D1 DE602004031295T DE602004031295T DE602004031295D1 DE 602004031295 D1 DE602004031295 D1 DE 602004031295D1 DE 602004031295 T DE602004031295 T DE 602004031295T DE 602004031295 T DE602004031295 T DE 602004031295T DE 602004031295 D1 DE602004031295 D1 DE 602004031295D1
Authority
DE
Germany
Prior art keywords
polishing unit
substrate polishing
substrate
unit
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004031295T
Other languages
German (de)
English (en)
Inventor
Kazuto Hirokawa
Yoichi Kobayashi
Shunsuke Nakai
Shinrou Ohta
Yasuo Tsukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Shimadzu Corp
Original Assignee
Ebara Corp
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp, Shimadzu Corp filed Critical Ebara Corp
Publication of DE602004031295D1 publication Critical patent/DE602004031295D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/08—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving liquid or pneumatic means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
DE602004031295T 2003-05-21 2004-05-19 Substratpoliergerät Expired - Lifetime DE602004031295D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003143526 2003-05-21
JP2003143527 2003-05-21
PCT/JP2004/007152 WO2004103636A2 (en) 2003-05-21 2004-05-19 Substrate polishing apparatus

Publications (1)

Publication Number Publication Date
DE602004031295D1 true DE602004031295D1 (de) 2011-03-17

Family

ID=33455528

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004031295T Expired - Lifetime DE602004031295D1 (de) 2003-05-21 2004-05-19 Substratpoliergerät

Country Status (8)

Country Link
US (2) US7101257B2 (enExample)
EP (1) EP1633528B1 (enExample)
JP (1) JP2006526292A (enExample)
KR (1) KR101052844B1 (enExample)
CN (1) CN1791491B (enExample)
DE (1) DE602004031295D1 (enExample)
TW (1) TWI271265B (enExample)
WO (1) WO2004103636A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7101257B2 (en) * 2003-05-21 2006-09-05 Ebara Corporation Substrate polishing apparatus
US7777920B2 (en) * 2006-02-28 2010-08-17 Toshiba Tec Kabushiki Kaisha Image copier and image copying method
JP2014154874A (ja) * 2013-02-07 2014-08-25 Toshiba Corp 膜厚モニタ装置、研磨装置および膜厚モニタ方法
JP2015126179A (ja) * 2013-12-27 2015-07-06 株式会社荏原製作所 研磨終点検出方法、及び研磨終点検出装置
JP6229737B2 (ja) * 2014-01-10 2017-11-15 株式会社Sumco ワークの厚さ測定装置、測定方法、及びワークの研磨装置
KR20170039019A (ko) 2015-09-30 2017-04-10 서울바이오시스 주식회사 침대용 공기 정화기 및 광촉매-공기조화 모듈
TW201822953A (zh) * 2016-09-16 2018-07-01 美商應用材料股份有限公司 基於溝槽深度的電磁感應監控進行的過拋光
US10562148B2 (en) * 2016-10-10 2020-02-18 Applied Materials, Inc. Real time profile control for chemical mechanical polishing
JP7141204B2 (ja) * 2017-10-19 2022-09-22 株式会社荏原製作所 研磨装置、及び研磨方法
JP7022647B2 (ja) * 2018-05-08 2022-02-18 株式会社荏原製作所 光透過性部材、研磨パッドおよび基板研磨装置
JP7403998B2 (ja) * 2019-08-29 2023-12-25 株式会社荏原製作所 研磨装置および研磨方法
CN112247819B (zh) * 2020-10-09 2022-08-19 无锡贝来钢管有限公司 大口径厚壁无缝钢管加工装置
CN115308140A (zh) * 2022-10-11 2022-11-08 杭州众硅电子科技有限公司 一种化学机械抛光的在线监测装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5657123A (en) * 1994-09-16 1997-08-12 Mitsubishi Materials Corp. Film thickness measuring apparatus, film thickness measuring method and wafer polishing system measuring a film thickness in conjunction with a liquid tank
JPH08174411A (ja) * 1994-12-22 1996-07-09 Ebara Corp ポリッシング装置
US6537133B1 (en) * 1995-03-28 2003-03-25 Applied Materials, Inc. Method for in-situ endpoint detection for chemical mechanical polishing operations
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5762536A (en) * 1996-04-26 1998-06-09 Lam Research Corporation Sensors for a linear polisher
US5958148A (en) * 1996-07-26 1999-09-28 Speedfam-Ipec Corporation Method for cleaning workpiece surfaces and monitoring probes during workpiece processing
JP3454658B2 (ja) * 1997-02-03 2003-10-06 大日本スクリーン製造株式会社 研磨処理モニター装置
JPH10229061A (ja) 1997-02-13 1998-08-25 Nikon Corp 研磨量測定装置
US6106662A (en) * 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6361646B1 (en) * 1998-06-08 2002-03-26 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6334807B1 (en) * 1999-04-30 2002-01-01 International Business Machines Corporation Chemical mechanical polishing in-situ end point system
WO2001015861A1 (en) 1999-08-27 2001-03-08 Asahi Kasei Kabushiki Kaisha Polishing pad and polisher
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
US6628397B1 (en) * 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
JP2001088021A (ja) * 1999-09-22 2001-04-03 Speedfam Co Ltd 研磨終点検出機構付き研磨装置
US6399501B2 (en) 1999-12-13 2002-06-04 Applied Materials, Inc. Method and apparatus for detecting polishing endpoint with optical monitoring
JP3854056B2 (ja) * 1999-12-13 2006-12-06 株式会社荏原製作所 基板膜厚測定方法、基板膜厚測定装置、基板処理方法及び基板処理装置
US6707540B1 (en) * 1999-12-23 2004-03-16 Kla-Tencor Corporation In-situ metalization monitoring using eddy current and optical measurements
WO2001046684A1 (en) 1999-12-23 2001-06-28 Kla-Tencor Corporation In-situ metalization monitoring using eddy current measurements and optical measurements
US6433541B1 (en) * 1999-12-23 2002-08-13 Kla-Tencor Corporation In-situ metalization monitoring using eddy current measurements during the process for removing the film
US6491569B2 (en) * 2001-04-19 2002-12-10 Speedfam-Ipec Corporation Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
CN1414608A (zh) * 2001-10-26 2003-04-30 矽统科技股份有限公司 晶圆的化学机械研磨装置
US6599765B1 (en) * 2001-12-12 2003-07-29 Lam Research Corporation Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection
JP3878016B2 (ja) * 2001-12-28 2007-02-07 株式会社荏原製作所 基板研磨装置
US7030018B2 (en) * 2002-02-04 2006-04-18 Kla-Tencor Technologies Corp. Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool
US6733368B1 (en) * 2003-02-10 2004-05-11 Seh America, Inc. Method for lapping a wafer
US7101257B2 (en) * 2003-05-21 2006-09-05 Ebara Corporation Substrate polishing apparatus

Also Published As

Publication number Publication date
TW200505633A (en) 2005-02-16
EP1633528B1 (en) 2011-02-02
US7547242B2 (en) 2009-06-16
WO2004103636A3 (en) 2005-02-17
EP1633528A4 (en) 2007-08-08
EP1633528A2 (en) 2006-03-15
JP2006526292A (ja) 2006-11-16
US20070042679A1 (en) 2007-02-22
KR20060003907A (ko) 2006-01-11
KR101052844B1 (ko) 2011-07-29
WO2004103636A2 (en) 2004-12-02
CN1791491B (zh) 2010-04-28
TWI271265B (en) 2007-01-21
US7101257B2 (en) 2006-09-05
CN1791491A (zh) 2006-06-21
US20040235393A1 (en) 2004-11-25

Similar Documents

Publication Publication Date Title
DE60336386D1 (de) Poliereinrichtung
DE602004032093D1 (de) Polierzusammensetzung
DE10261362B8 (de) Substrat-Halter
DE60331327D1 (de) Polierbürste
FI20030917L (fi) Jauhin
DE502004011842D1 (de) Schleifteller
DE502004002833D1 (de) Alkoxysilanterminierte prepolymere
DE60325925D1 (de) Polierkissen
DE60305827D1 (de) Polierzusammensetzung
DE60306785D1 (de) Polierkissen
DE602004028430D1 (de) Halbleiter
DE60302398D1 (de) Poliervorrichtung
DK1471124T3 (da) Politursammensætning
DK1658515T3 (da) Afisningsinformationssystem
DE602004029704D1 (de) Reinigungsmittel
DE602004031295D1 (de) Substratpoliergerät
EP1685926A4 (en) GRINDING PROCESS
DE60314505D1 (de) Polierverfahren
DE602004030875D1 (de) Duschkopf
DE602004013124D1 (de) Schleifverfahren
DE602004001539D1 (de) Polierkissen
DE502004005995D1 (de) Auflagefläche auflageelement
AT500623A3 (de) Poliervorrichtung
AT500001B8 (de) Münzscheideeinrichtung
FI20031335A0 (fi) Tarjoilujalusta