JP2006525859A - 触媒処理のための制御システム - Google Patents
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Abstract
Description
icorr = [βaβc/2.303(βa+βc)][1/Rp] (I)
Rp = |Z(jw)|w→0 − |Z(jw)|w→∞ (II)
ここで,
icorr =安定状態の腐食電流;
βa = 陰イオン反応に対するターフェル定数
βc = 陽イオン反応に対するターフェス定数
Rp = 分極インピーダンス(オーム)
w = 2×π×f(π=3.141,fは適用される交流電流の周波数(ヘルツ))
j = 虚単位数(−1)1/2
Z(jw) = インターフェースの複素インピーダンス(周波数の関数)(オーム)
|Z(jw)|w→0 = 周波数がゼロに近づいたときの複素インピーダンス(オーム)
|Z(jw)|w→∞ = 周波数が非常に高い周波数に近づいたときの複素オーム(オーム)
Claims (20)
- 触媒処理のための制御システムであって,
a)触媒層を有する電気伝導性支持体と,
b)触媒層および電気伝導性支持体へ横切るようにDC場を適用する手段と,
c)DC場の適用を制御し,変化させる手段と,
d)触媒層および電気伝導性支持体に対する分極インピーダンスを測定する手段と,
e)測定された分極インピーダンスを基準値と比較する手段と,
f)測定された分極インピーダンスが基準値と異なるとき,触媒層および電気伝導性支持体へのDC場の適用を変化させる手段と,
を含む制御システム。 - g)触媒層を加熱する手段と,
h)加熱を制御し,変化させる手段と,
i)測定された分極インピーダンスが基準値と異なるとき,触媒層および電気伝導性支持体への加熱を変化させる手段と,
を含む,請求項1に記載の制御システム。 - 電気伝導性支持体が管状の形状をもち,触媒が少なくとも,管状支持体の内径の一部に広がる,請求項1に記載の制御システム。
- 第一の電極が電気伝導性支持体と接触し,第二の電極およびACセンサーが,触媒層の両端側で接し,管状支持体を挟んで第一の電極の向かい側にある,請求項1に記載の制御システム。
- 電気伝導性支持体が,固体電解質,混合伝導体,およびサーメットからなるグループから選択される,請求項1に記載の制御システム。
- 電気伝導性支持体が,安定ジルコニア,安定酸化ビスマス,イットリウム安定酸化ビスマス,Nb2O5安定酸化ビスマス,ナトリウムベータアルミナ,ヒロドニウムベータアルミナ,ナフィロン,多孔質金属,酸化セリウムをベースにした固溶体,CaTiO3固溶体,SrTiO3をベースとした固溶体,LaAlO3をベースとした固溶体,ケイ化モリブデンからなるグループから選択される,請求項1に記載の制御システム。
- 触媒が,金属または電気的伝導性のあるセラミックからなるグループから選択される,請求項1に記載の制御システム。
- 触媒が,プラチナ,パラジウム,およびSnO−In2O3混合物からなるグループから選択される,請求項1に記載の制御システム。
- 触媒処理のための制御システムであって,
触媒層を有する電気伝導性支持体と,第一の電極および該第一の電極とは反対の極性となる第二の電極に接続される電流制御ユニットとを含み,
電流制御ユニットは第一および第二の電極へのDC電流の適用を制御し,変化させ,第一の電極は電気伝導性支持体と接触し,第二の電極は触媒と接触し,電流制御ユニットは第一および第二の電極へのAC電流の適用を制御し,変化させ,ACセンサーが触媒層または電気伝導性支持体に接続され,第一および第二の電極のAC電流レベル,および二つの異なる周波数でもってACセンサーで検出されたAC電流レベルが,分極ピンピーダンスが決定されるインピーダンス測定ユニットに接続され,インピーダンス測定ユニットは,測定された分極インピーダンスが基準値と比較される中央処理ユニットに接続され,中央処理ユニットは,決定された分極インピーダンスが基準値と異なるときに,第一および第二の電極へのDC電流の適用を変化させるために,電流制御ユニットに接続される,ところの制御システム。 - 熱源に接続された加熱制御ユニットをさらに含み,
熱源は触媒層を加熱するもので,加熱制御ユニットは触媒への熱源による加熱の割合および温度を制御し,中央処理ユニットは,測定された分極インピーダンスが基準値と異なるときに,加熱を変化させるために,加熱制御ユニットに接続される,請求項1に記載の制御システム。 - 電気伝導性支持体が,固体電解質,混合導体体,およびサーメットからなるグループから選択される,請求項10に記載の制御システム。
- 電気伝導性支持体が,安定ジルコニア,安定酸化ビスマス,イットリウム安定酸化ビスマス,Nb2O5安定酸化ビスマス,ナトリウムベータアルミナ,ヒロドニウムベータアルミナ,ナフィロン,多孔質金属,酸化セリウムをベースにした固溶体,CaTiO3固溶体,SrTiO3をベースとした固溶体,LaAlO3をベースとした固溶体,ケイ化モリブデンからなるグループから選択される,請求項10に記載の制御システム。
- 触媒が,金属または電気的伝導性のあるセラミックからなるグループから選択される,請求項10に記載の制御システム。
- 触媒が,プラチナ,パラジウム,およびSnO−In2O3混合物からなるグループから選択される,請求項1に記載の制御システム。
- 触媒処理のための制御システムであって,
a)触媒層を有する電気伝導性支持体をそれぞれ有する第一および第二のシステム要素であって,触媒層が,互いに離れてはいるが近接し,向き合っている,ところのシステム要素と,
b)二つの触媒層へ横切るようにDC場を適用する手段と,
c)DC場の適用を制御し,変化させる手段と,
d)二つの触媒層に対する分極インピーダンスを測定する手段と,
e)測定された分極インピーダンスを基準値と比較する手段と,
f)測定された分極インピーダンスが基準値と異なるときに,二つの触媒層へのDC場の適用を変化させる手段と,
を含む,制御システム。 - 触媒処理のための制御システムであって,触媒層を有する電気伝導性支持体をそれぞれ有する第一および第二のシステム要素と,第一の電極および該第一の電極とは反対の極性となる第二の電極と接続される電流制御ユニットと,第二のシステム要素と接続されるACセンサーとを含み,
触媒層が,互いに離れてはいるが近接し,向き合い,電流制御ユニットは第一および第二の電極へのDC電流の適用を制御し,変化させ,第一の電極は第一のシステム要素と接触し,第二の電極は第二のシステム要素と接触し,電流制御ユニットはACセンサーに接続され,電流制御ユニットは第一および第二の電極へのAC電流の適用を制御し,変化させ,第一および第二の電極のAC電流レベル,および二つの異なる周波数でもってACセンサーで検出されたAC電流レベルが,分極インピーダンスが決定されるインピーダンス測定ユニットに接続され,インピーダンス測定ユニットは,測定された分極インピーダンスが基準値と比較される中央処理ユニットに接続され,中央処理ユニットは,測定された分極インピーダンスが基準値と異なるときに,第一および第二の電極へのDC電流の適用を変化させるために,電流制御ユニットに接続される,ところの制御システム。 - 請求項1の制御ユニットの触媒に軽炭化水素または燃焼排ガスのスループット流を接触させることからなる方法。
- 請求項7の制御ユニットの触媒に軽炭化水素または燃焼排ガスのスループット流を接触させることからなる方法。
- 請求項12の制御ユニットの触媒に軽炭化水素または燃焼排ガスのスループット流を接触させることからなる方法。
- 請求項13の制御ユニットの触媒に軽炭化水素または燃焼排ガスのスループット流を接触させることからなる方法。
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US10/423,376 US7325392B2 (en) | 2002-07-12 | 2003-04-25 | Control system for catalytic processes |
PCT/US2003/035145 WO2004096423A2 (en) | 2003-04-25 | 2003-11-04 | Control system for catalytic processes |
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JP2006525859A true JP2006525859A (ja) | 2006-11-16 |
JP2006525859A5 JP2006525859A5 (ja) | 2008-10-23 |
JP4502818B2 JP4502818B2 (ja) | 2010-07-14 |
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EP (1) | EP1617938B1 (ja) |
JP (1) | JP4502818B2 (ja) |
AU (1) | AU2003290609A1 (ja) |
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JP2009113003A (ja) * | 2007-11-09 | 2009-05-28 | Toyota Central R&D Labs Inc | 排ガス浄化方法 |
JP2009161394A (ja) * | 2008-01-07 | 2009-07-23 | Nok Corp | 多孔質セラミックス膜 |
JP2010540437A (ja) * | 2007-09-20 | 2010-12-24 | カテレクトリック・コーポレイション | 有用物質を合成するための方法及び装置 |
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KR100681481B1 (ko) | 2005-12-08 | 2007-02-09 | 한국항공우주연구원 | 이리듐 촉매의 성능측정장치 |
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JP2012511239A (ja) * | 2008-12-07 | 2012-05-17 | クリーン エナジー イノベイションズ, エルエルシー | 界面過程の刺激および強化 |
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- 2003-04-25 US US10/423,376 patent/US7325392B2/en not_active Expired - Fee Related
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- 2003-11-04 CA CA2523172A patent/CA2523172C/en not_active Expired - Fee Related
- 2003-11-04 EP EP03783143.5A patent/EP1617938B1/en not_active Expired - Lifetime
- 2003-11-04 AU AU2003290609A patent/AU2003290609A1/en not_active Abandoned
- 2003-11-04 JP JP2004571465A patent/JP4502818B2/ja not_active Expired - Fee Related
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JP2010540437A (ja) * | 2007-09-20 | 2010-12-24 | カテレクトリック・コーポレイション | 有用物質を合成するための方法及び装置 |
JP2009113003A (ja) * | 2007-11-09 | 2009-05-28 | Toyota Central R&D Labs Inc | 排ガス浄化方法 |
JP2009161394A (ja) * | 2008-01-07 | 2009-07-23 | Nok Corp | 多孔質セラミックス膜 |
Also Published As
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EP1617938B1 (en) | 2016-02-17 |
AU2003290609A1 (en) | 2004-11-23 |
WO2004096423A2 (en) | 2004-11-11 |
JP4502818B2 (ja) | 2010-07-14 |
CA2523172A1 (en) | 2004-11-11 |
WO2004096423A3 (en) | 2007-03-29 |
US20040007475A1 (en) | 2004-01-15 |
AU2003290609A8 (en) | 2004-11-23 |
EP1617938A4 (en) | 2011-03-09 |
EP1617938A2 (en) | 2006-01-25 |
CA2523172C (en) | 2011-07-26 |
US7325392B2 (en) | 2008-02-05 |
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