JP2006525132A5 - - Google Patents
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- Publication number
- JP2006525132A5 JP2006525132A5 JP2006513083A JP2006513083A JP2006525132A5 JP 2006525132 A5 JP2006525132 A5 JP 2006525132A5 JP 2006513083 A JP2006513083 A JP 2006513083A JP 2006513083 A JP2006513083 A JP 2006513083A JP 2006525132 A5 JP2006525132 A5 JP 2006525132A5
- Authority
- JP
- Japan
- Prior art keywords
- sacrificial layer
- substrate
- layer
- depositing
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims 31
- 238000000034 method Methods 0.000 claims 14
- 238000000151 deposition Methods 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 7
- 230000008021 deposition Effects 0.000 claims 5
- 238000003486 chemical etching Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000638 solvent extraction Methods 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/426,148 US7005193B2 (en) | 2003-04-29 | 2003-04-29 | Method of adding mass to MEMS structures |
| PCT/US2004/011867 WO2004097895A2 (en) | 2003-04-29 | 2004-04-16 | A method of adding mass to mems structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006525132A JP2006525132A (ja) | 2006-11-09 |
| JP2006525132A5 true JP2006525132A5 (https=) | 2007-05-17 |
Family
ID=33309806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006513083A Pending JP2006525132A (ja) | 2003-04-29 | 2004-04-16 | Mems構造体に質量を付加する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7005193B2 (https=) |
| EP (1) | EP1620257A2 (https=) |
| JP (1) | JP2006525132A (https=) |
| KR (1) | KR20060015554A (https=) |
| CN (1) | CN1780732B (https=) |
| TW (1) | TWI337780B (https=) |
| WO (1) | WO2004097895A2 (https=) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006263888A (ja) * | 2005-03-25 | 2006-10-05 | Osaka Industrial Promotion Organization | デバイスの製造方法 |
| US7578190B2 (en) * | 2007-08-03 | 2009-08-25 | Freescale Semiconductor, Inc. | Symmetrical differential capacitive sensor and method of making same |
| CN102538834B (zh) * | 2008-05-27 | 2015-01-14 | 原相科技股份有限公司 | 同平面传感器与制作方法 |
| US8096182B2 (en) * | 2008-05-29 | 2012-01-17 | Freescale Semiconductor, Inc. | Capacitive sensor with stress relief that compensates for package stress |
| DE102008043788A1 (de) * | 2008-11-17 | 2010-05-20 | Robert Bosch Gmbh | Mikromechanisches Bauelement |
| US8710599B2 (en) | 2009-08-04 | 2014-04-29 | Fairchild Semiconductor Corporation | Micromachined devices and fabricating the same |
| KR20130057485A (ko) | 2010-09-18 | 2013-05-31 | 페어차일드 세미컨덕터 코포레이션 | 미세 전자 기계 시스템에 미치는 응력을 감소시키기 위한 패키징 |
| US9278845B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope Z-axis electrode structure |
| KR101443730B1 (ko) | 2010-09-18 | 2014-09-23 | 페어차일드 세미컨덕터 코포레이션 | 미세기계화 다이, 및 직교 오차가 작은 서스펜션을 제조하는 방법 |
| EP2616822B1 (en) | 2010-09-18 | 2015-07-01 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
| EP2616389B1 (en) | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
| EP2616771B8 (en) | 2010-09-18 | 2018-12-19 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
| KR101311966B1 (ko) | 2010-09-20 | 2013-10-14 | 페어차일드 세미컨덕터 코포레이션 | 감소된 션트 커패시턴스를 갖는 관통 실리콘 비아 |
| WO2012040211A2 (en) | 2010-09-20 | 2012-03-29 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
| CN102530831B (zh) * | 2010-12-27 | 2014-05-21 | 上海丽恒光微电子科技有限公司 | Mems器件的制作方法 |
| IL214294A0 (en) * | 2011-07-26 | 2011-09-27 | Rafael Advanced Defense Sys | Surface micro-machined switching device |
| US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
| US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
| US8754694B2 (en) | 2012-04-03 | 2014-06-17 | Fairchild Semiconductor Corporation | Accurate ninety-degree phase shifter |
| US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
| US8742964B2 (en) | 2012-04-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Noise reduction method with chopping for a merged MEMS accelerometer sensor |
| EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
| US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
| EP2648334B1 (en) | 2012-04-05 | 2020-06-10 | Fairchild Semiconductor Corporation | Mems device front-end charge amplifier |
| EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
| US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
| US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
| DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
| EP3036188B1 (en) * | 2013-08-23 | 2019-07-17 | Intel Corporation | Mems devices utilizing a thick metal layer of an interconnect metal film stack |
| US9296606B2 (en) * | 2014-02-04 | 2016-03-29 | Invensense, Inc. | MEMS device with a stress-isolation structure |
| CN105785072A (zh) * | 2014-12-25 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | 一种mems加速度传感器及其制造方法 |
| US10697994B2 (en) | 2017-02-22 | 2020-06-30 | Semiconductor Components Industries, Llc | Accelerometer techniques to compensate package stress |
| CN109211217A (zh) * | 2017-07-06 | 2019-01-15 | 立锜科技股份有限公司 | 微机电装置 |
| CN110823259B (zh) * | 2019-10-15 | 2021-08-27 | 上海集成电路研发中心有限公司 | 一种惯性传感器及其制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3774077D1 (de) * | 1986-08-25 | 1991-11-28 | Richard A Hanson | Pruefmassenaufhaengung fuer einen beschleunigungsmesser. |
| US4901570A (en) * | 1988-11-21 | 1990-02-20 | General Motors Corporation | Resonant-bridge two axis microaccelerometer |
| US5605598A (en) * | 1990-10-17 | 1997-02-25 | The Charles Stark Draper Laboratory Inc. | Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency |
| JPH04339266A (ja) * | 1991-02-08 | 1992-11-26 | Tokai Rika Co Ltd | 加速度センサおよびその製造方法 |
| JPH07117553B2 (ja) * | 1992-06-03 | 1995-12-18 | 日産自動車株式会社 | 半導体加速度センサの製造方法 |
| JPH06258338A (ja) * | 1993-03-09 | 1994-09-16 | Matsushita Electric Works Ltd | 半導体加速度センサ |
| KR0139506B1 (ko) * | 1994-10-07 | 1998-07-15 | 전성원 | 자체진단 기능을 구비한 대칭질량형 가속도계 및 그 제조방법 |
| US5726480A (en) * | 1995-01-27 | 1998-03-10 | The Regents Of The University Of California | Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same |
| JPH11271351A (ja) * | 1998-03-19 | 1999-10-08 | Mitsubishi Electric Corp | 圧電検出素子 |
| JP2000088878A (ja) * | 1998-09-09 | 2000-03-31 | Tokai Rika Co Ltd | 加速度スイッチ及びその製造方法 |
| US6228275B1 (en) * | 1998-12-10 | 2001-05-08 | Motorola, Inc. | Method of manufacturing a sensor |
| JP3392069B2 (ja) * | 1999-02-15 | 2003-03-31 | 松下電工株式会社 | 半導体加速度センサおよびその製造方法 |
| US6401536B1 (en) * | 2000-02-11 | 2002-06-11 | Motorola, Inc. | Acceleration sensor and method of manufacture |
| US6504385B2 (en) * | 2001-05-31 | 2003-01-07 | Hewlett-Pakcard Company | Three-axis motion sensor |
| US6619123B2 (en) * | 2001-06-04 | 2003-09-16 | Wisconsin Alumni Research Foundation | Micromachined shock sensor |
| JP2003050249A (ja) * | 2001-08-08 | 2003-02-21 | Tokai Rika Co Ltd | 加速度センサ及びその製造方法 |
-
2003
- 2003-04-29 US US10/426,148 patent/US7005193B2/en not_active Expired - Fee Related
-
2004
- 2004-04-16 JP JP2006513083A patent/JP2006525132A/ja active Pending
- 2004-04-16 KR KR1020057020574A patent/KR20060015554A/ko not_active Ceased
- 2004-04-16 CN CN200480011500XA patent/CN1780732B/zh not_active Expired - Fee Related
- 2004-04-16 WO PCT/US2004/011867 patent/WO2004097895A2/en not_active Ceased
- 2004-04-16 EP EP04750262A patent/EP1620257A2/en not_active Withdrawn
- 2004-04-29 TW TW093111970A patent/TWI337780B/zh not_active IP Right Cessation
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