TWI337780B - A method of adding mass to mems structures - Google Patents

A method of adding mass to mems structures Download PDF

Info

Publication number
TWI337780B
TWI337780B TW093111970A TW93111970A TWI337780B TW I337780 B TWI337780 B TW I337780B TW 093111970 A TW093111970 A TW 093111970A TW 93111970 A TW93111970 A TW 93111970A TW I337780 B TWI337780 B TW I337780B
Authority
TW
Taiwan
Prior art keywords
attachment
layer
measurement
substrate
pedestal
Prior art date
Application number
TW093111970A
Other languages
English (en)
Chinese (zh)
Other versions
TW200520234A (en
Inventor
Andrew C Mcneil
Gary Li
Gary J O'brien
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200520234A publication Critical patent/TW200520234A/zh
Application granted granted Critical
Publication of TWI337780B publication Critical patent/TWI337780B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems ; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0888—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values for indicating angular acceleration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P3/00—Measuring linear or angular speed; Measuring differences of linear or angular speeds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/025—Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
TW093111970A 2003-04-29 2004-04-29 A method of adding mass to mems structures TWI337780B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/426,148 US7005193B2 (en) 2003-04-29 2003-04-29 Method of adding mass to MEMS structures

Publications (2)

Publication Number Publication Date
TW200520234A TW200520234A (en) 2005-06-16
TWI337780B true TWI337780B (en) 2011-02-21

Family

ID=33309806

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093111970A TWI337780B (en) 2003-04-29 2004-04-29 A method of adding mass to mems structures

Country Status (7)

Country Link
US (1) US7005193B2 (https=)
EP (1) EP1620257A2 (https=)
JP (1) JP2006525132A (https=)
KR (1) KR20060015554A (https=)
CN (1) CN1780732B (https=)
TW (1) TWI337780B (https=)
WO (1) WO2004097895A2 (https=)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006263888A (ja) * 2005-03-25 2006-10-05 Osaka Industrial Promotion Organization デバイスの製造方法
US7578190B2 (en) * 2007-08-03 2009-08-25 Freescale Semiconductor, Inc. Symmetrical differential capacitive sensor and method of making same
CN102538834B (zh) * 2008-05-27 2015-01-14 原相科技股份有限公司 同平面传感器与制作方法
US8096182B2 (en) * 2008-05-29 2012-01-17 Freescale Semiconductor, Inc. Capacitive sensor with stress relief that compensates for package stress
DE102008043788A1 (de) * 2008-11-17 2010-05-20 Robert Bosch Gmbh Mikromechanisches Bauelement
US8739626B2 (en) 2009-08-04 2014-06-03 Fairchild Semiconductor Corporation Micromachined inertial sensor devices
CN103221331B (zh) 2010-09-18 2016-02-03 快捷半导体公司 用于微机电系统的密封封装
US9278845B2 (en) 2010-09-18 2016-03-08 Fairchild Semiconductor Corporation MEMS multi-axis gyroscope Z-axis electrode structure
EP2616771B8 (en) 2010-09-18 2018-12-19 Fairchild Semiconductor Corporation Micromachined monolithic 6-axis inertial sensor
US9455354B2 (en) 2010-09-18 2016-09-27 Fairchild Semiconductor Corporation Micromachined 3-axis accelerometer with a single proof-mass
WO2012037492A2 (en) 2010-09-18 2012-03-22 Janusz Bryzek Multi-die mems package
WO2012037501A2 (en) 2010-09-18 2012-03-22 Cenk Acar Flexure bearing to reduce quadrature for resonating micromachined devices
CN103209922B (zh) 2010-09-20 2014-09-17 快捷半导体公司 具有减小的并联电容的硅通孔
WO2012040211A2 (en) 2010-09-20 2012-03-29 Fairchild Semiconductor Corporation Microelectromechanical pressure sensor including reference capacitor
CN102530831B (zh) * 2010-12-27 2014-05-21 上海丽恒光微电子科技有限公司 Mems器件的制作方法
IL214294A0 (en) * 2011-07-26 2011-09-27 Rafael Advanced Defense Sys Surface micro-machined switching device
US9062972B2 (en) 2012-01-31 2015-06-23 Fairchild Semiconductor Corporation MEMS multi-axis accelerometer electrode structure
US8978475B2 (en) * 2012-02-01 2015-03-17 Fairchild Semiconductor Corporation MEMS proof mass with split z-axis portions
US8754694B2 (en) 2012-04-03 2014-06-17 Fairchild Semiconductor Corporation Accurate ninety-degree phase shifter
US9488693B2 (en) 2012-04-04 2016-11-08 Fairchild Semiconductor Corporation Self test of MEMS accelerometer with ASICS integrated capacitors
US8742964B2 (en) 2012-04-04 2014-06-03 Fairchild Semiconductor Corporation Noise reduction method with chopping for a merged MEMS accelerometer sensor
EP2647955B8 (en) 2012-04-05 2018-12-19 Fairchild Semiconductor Corporation MEMS device quadrature phase shift cancellation
US9069006B2 (en) 2012-04-05 2015-06-30 Fairchild Semiconductor Corporation Self test of MEMS gyroscope with ASICs integrated capacitors
EP2647952B1 (en) 2012-04-05 2017-11-15 Fairchild Semiconductor Corporation Mems device automatic-gain control loop for mechanical amplitude drive
KR102058489B1 (ko) 2012-04-05 2019-12-23 페어차일드 세미컨덕터 코포레이션 멤스 장치 프론트 엔드 전하 증폭기
US9625272B2 (en) 2012-04-12 2017-04-18 Fairchild Semiconductor Corporation MEMS quadrature cancellation and signal demodulation
KR101999745B1 (ko) 2012-04-12 2019-10-01 페어차일드 세미컨덕터 코포레이션 미세 전자 기계 시스템 구동기
DE102013014881B4 (de) 2012-09-12 2023-05-04 Fairchild Semiconductor Corporation Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien
EP3036188B1 (en) 2013-08-23 2019-07-17 Intel Corporation Mems devices utilizing a thick metal layer of an interconnect metal film stack
US9296606B2 (en) * 2014-02-04 2016-03-29 Invensense, Inc. MEMS device with a stress-isolation structure
CN105785072A (zh) * 2014-12-25 2016-07-20 中芯国际集成电路制造(上海)有限公司 一种mems加速度传感器及其制造方法
US10697994B2 (en) 2017-02-22 2020-06-30 Semiconductor Components Industries, Llc Accelerometer techniques to compensate package stress
CN109211217A (zh) * 2017-07-06 2019-01-15 立锜科技股份有限公司 微机电装置
CN110823259B (zh) * 2019-10-15 2021-08-27 上海集成电路研发中心有限公司 一种惯性传感器及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0268351B1 (en) * 1986-08-25 1991-10-23 Richard A. Hanson Proof mass suspension assembly for an accelerometer
US4901570A (en) * 1988-11-21 1990-02-20 General Motors Corporation Resonant-bridge two axis microaccelerometer
US5605598A (en) * 1990-10-17 1997-02-25 The Charles Stark Draper Laboratory Inc. Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency
JPH04339266A (ja) * 1991-02-08 1992-11-26 Tokai Rika Co Ltd 加速度センサおよびその製造方法
JPH07117553B2 (ja) * 1992-06-03 1995-12-18 日産自動車株式会社 半導体加速度センサの製造方法
JPH06258338A (ja) * 1993-03-09 1994-09-16 Matsushita Electric Works Ltd 半導体加速度センサ
KR0139506B1 (ko) * 1994-10-07 1998-07-15 전성원 자체진단 기능을 구비한 대칭질량형 가속도계 및 그 제조방법
US5726480A (en) * 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
JPH11271351A (ja) * 1998-03-19 1999-10-08 Mitsubishi Electric Corp 圧電検出素子
JP2000088878A (ja) * 1998-09-09 2000-03-31 Tokai Rika Co Ltd 加速度スイッチ及びその製造方法
US6228275B1 (en) * 1998-12-10 2001-05-08 Motorola, Inc. Method of manufacturing a sensor
JP3392069B2 (ja) * 1999-02-15 2003-03-31 松下電工株式会社 半導体加速度センサおよびその製造方法
US6401536B1 (en) * 2000-02-11 2002-06-11 Motorola, Inc. Acceleration sensor and method of manufacture
US6504385B2 (en) * 2001-05-31 2003-01-07 Hewlett-Pakcard Company Three-axis motion sensor
US6619123B2 (en) * 2001-06-04 2003-09-16 Wisconsin Alumni Research Foundation Micromachined shock sensor
JP2003050249A (ja) * 2001-08-08 2003-02-21 Tokai Rika Co Ltd 加速度センサ及びその製造方法

Also Published As

Publication number Publication date
CN1780732B (zh) 2012-04-25
WO2004097895A3 (en) 2005-03-24
US20040219340A1 (en) 2004-11-04
KR20060015554A (ko) 2006-02-17
US7005193B2 (en) 2006-02-28
TW200520234A (en) 2005-06-16
WO2004097895A2 (en) 2004-11-11
JP2006525132A (ja) 2006-11-09
CN1780732A (zh) 2006-05-31
EP1620257A2 (en) 2006-02-01

Similar Documents

Publication Publication Date Title
TWI337780B (en) A method of adding mass to mems structures
JP4871513B2 (ja) 薄く形成されたカンチレバー構造を備えた微小機械装置及び関連の方法
US9146252B2 (en) In-plane piezoresistive detection sensor
EP2339357B1 (en) Method for fabricating a sensor
US4882933A (en) Accelerometer with integral bidirectional shock protection and controllable viscous damping
EP0623825B1 (en) Accelerometer sense element
US6792804B2 (en) Sensor for measuring out-of-plane acceleration
US6936492B2 (en) Single proof mass, 3 axis MEMS transducer
US9061895B2 (en) Micromechanical structure comprising a mobile part having stops for out-of plane displacements of the structure and its production process
EP2387722B1 (en) Method of forming a device with a piezoresistor and accelerometer
US4969359A (en) Silicon accelerometer responsive to three orthogonal force components and method for fabricating
Chu et al. Measurements of material properties using differential capacitive strain sensors
JPH10177033A (ja) 加速度測定装置
EP3151018B1 (en) Mems sensor with reduced cross-axis sensitivity
JP6022587B2 (ja) 変形可能な膜と強い変形に対する保護とを有する微小機械構造
US9745189B1 (en) MEMS device with isolation sub-frame structure
TW201922610A (zh) 微機械ｚ軸慣性感測器
CN108008150A (zh) 一种低交叉轴灵敏度压阻式加速度计结构及制作方法
CN107643424B (zh) 一种压阻式mems加速度芯片及其制作方法
US7637160B2 (en) MEMS suspension and anchoring design
JPH04249727A (ja) 力および加速度の検出装置
JP4750994B2 (ja) 特に加速度センサに用いられるマイクロメカニカル構造体
JPH1172505A (ja) 加速度センサおよびその製造方法
TW541434B (en) Structure of pendulum micromachined inertia sensor and manufacturing method thereof
US20210114865A1 (en) Hinged microelectromechanical and/or nanoelectromechanical device with out-of-plane movement

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees