JP2006523778A - 原子層蒸着による銅フィルムの蒸着のための揮発性銅(i)錯体 - Google Patents
原子層蒸着による銅フィルムの蒸着のための揮発性銅(i)錯体 Download PDFInfo
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- JP2006523778A JP2006523778A JP2006510108A JP2006510108A JP2006523778A JP 2006523778 A JP2006523778 A JP 2006523778A JP 2006510108 A JP2006510108 A JP 2006510108A JP 2006510108 A JP2006510108 A JP 2006510108A JP 2006523778 A JP2006523778 A JP 2006523778A
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- copper complex
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- 239000010949 copper Substances 0.000 title claims abstract description 40
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 38
- 238000000231 atomic layer deposition Methods 0.000 title abstract description 14
- 238000000151 deposition Methods 0.000 title abstract description 8
- 230000008021 deposition Effects 0.000 title abstract description 4
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical class [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 32
- 229910000071 diazene Inorganic materials 0.000 claims abstract description 14
- 239000003638 chemical reducing agent Substances 0.000 claims description 27
- 150000004699 copper complex Chemical class 0.000 claims description 27
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 12
- HBEDSQVIWPRPAY-UHFFFAOYSA-N 2,3-dihydrobenzofuran Chemical compound C1=CC=C2OCCC2=C1 HBEDSQVIWPRPAY-UHFFFAOYSA-N 0.000 claims description 10
- FEJUGLKDZJDVFY-UHFFFAOYSA-N 9-borabicyclo[3.3.1]nonane Substances C1CCC2CCCC1B2 FEJUGLKDZJDVFY-UHFFFAOYSA-N 0.000 claims description 10
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 10
- 150000001336 alkenes Chemical class 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 8
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 claims description 6
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 229910000085 borane Inorganic materials 0.000 claims description 5
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 claims description 5
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 5
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 5
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910000078 germane Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- VQYPKWOGIPDGPN-UHFFFAOYSA-N [C].[Ta] Chemical compound [C].[Ta] VQYPKWOGIPDGPN-UHFFFAOYSA-N 0.000 claims description 3
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 3
- AMKGKYQBASDDJB-UHFFFAOYSA-N 9$l^{2}-borabicyclo[3.3.1]nonane Chemical group C1CCC2CCCC1[B]2 AMKGKYQBASDDJB-UHFFFAOYSA-N 0.000 claims 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims 1
- 239000007787 solid Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 15
- 239000003446 ligand Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000009467 reduction Effects 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000012691 Cu precursor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000003153 chemical reaction reagent Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000003921 oil Substances 0.000 description 5
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 150000001879 copper Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 2
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 2
- WSSSPWUEQFSQQG-UHFFFAOYSA-N 4-methyl-1-pentene Chemical compound CC(C)CC=C WSSSPWUEQFSQQG-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- -1 diborane Chemical compound 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PKXHXOTZMFCXSH-UHFFFAOYSA-N 3,3-dimethylbut-1-ene Chemical compound CC(C)(C)C=C PKXHXOTZMFCXSH-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical class NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- VAYGXNSJCAHWJZ-UHFFFAOYSA-N dimethyl sulfate Chemical compound COS(=O)(=O)OC VAYGXNSJCAHWJZ-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000004508 fractional distillation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 125000006316 iso-butyl amino group Chemical group [H]N(*)C([H])([H])C([H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000004658 ketimines Chemical class 0.000 description 1
- UBJFKNSINUCEAL-UHFFFAOYSA-N lithium;2-methylpropane Chemical compound [Li+].C[C-](C)C UBJFKNSINUCEAL-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- HYWCXWRMUZYRPH-UHFFFAOYSA-N trimethyl(prop-2-enyl)silane Chemical compound C[Si](C)(C)CC=C HYWCXWRMUZYRPH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
a.基材を銅錯体(I)と接触させて基材上に銅錯体の蒸着物(deposit)を形成せしめ、そして
R1およびR4が独立して水素、メチル、エチル、プロピル、イソプロピル、イソブ
チルおよびネオペンチルよりなる群から選択され、
R2およびR3が独立してフェニルおよびC1〜C10アルキル基よりなる群から選
択され、
b.蒸着した銅錯体を還元剤と接触させる
ことを含んでなる基材上での銅蒸着物(copper deposits)の形成方法であって、
そして
還元剤が9−BBN(9−ボラビシクロ[3.3.1]ノナン)、ジボラン、形BR
xH3−x(ここで、x=0、1または2であり、Rは独立してフェニルおよびC1
〜C10アルキル基よりなる群から選択される)のボラン、ジヒドロベンゾフラン、
ピラゾリン、ジシラン、形SiR’yH4−y(ここで、y=0、1、2または3で
あり、R’は独立してフェニルおよびC1〜C10アルキル基よりなる群から選択さ
れる)のシラン、ならびに形GeR”zH4−z(ここで、z=0、1、2または3
であり、R”は独立してフェニルおよびC1〜C10アルキル基よりなる群から選択
される)のゲルマンよりなる群から選択される
方法を記載する。
a.基材を銅錯体(I)と接触させて基材上に銅錯体の蒸着物を形成せしめ、そして
R1およびR4は独立して水素、メチル、エチル、プロピル、イソプロピル、イソブ
チルおよびネオペンチルよりなる群から選択され、
R2およびR3は独立してフェニルおよびC1〜C10アルキル基よりなる群から選
択され、
b.蒸着した銅錯体を還元剤と接触させる
ことによって基材上に蒸着され、
そして
還元剤は9−BBN、ジボラン、形BRxH3−x(ここで、x=0、1または2で
あり、Rは独立してフェニルおよびC1〜C10アルキル基よりなる群から選択され
る)のボラン、ジヒドロベンゾフラン、ピラゾリン、ジシラン、形SiR’yH4−
y(ここで、y=0、1、2または3であり、R’は独立してフェニルおよびC1〜
C10アルキル基よりなる群から選択される)のシラン、ならびに形GeR”zH4
−z(ここで、z=0、1、2または3であり、R”は独立してフェニルおよびC1
〜C10アルキル基よりなる群から選択される)のゲルマンよりなる群から選択され
る。
R1およびR4は独立して水素、メチル、エチル、プロピル、イソプロピル、イソブチルおよびネオペンチルよりなる群から選択され、
R2およびR3は独立してフェニルおよびC1〜C10アルキル基よりなる群から選択される)
を提供する。
ビニルトリメチルシラン(N,N’−ジイソブチル−2,4−ペンタンジケチミネート)銅の調製および還元
窒素雰囲気下のドライボックス中で、250mL丸底フラスコに4−(イソブチルアミノ)−3−ペンテン−2−オン(36.9g、237ミリモル)およびジメチル硫酸(30.0g、237ミリモル)を装入した。反応溶液を5分間撹拌し、それから撹拌なしに一晩放置した。黄色混合物が橙色および粘稠になった。激しく撹拌しながら添加ロートによってイソブチルアミン(18g、246ミリモル)を加えた。溶液をそれが凝固するまで1時間撹拌した。中間塩を単離せずに、下に記載するように(中間塩の理論収率を基準にして)直接遊離アミンに変換した。
実施例1で最終生成物として単離した粘稠なオイルを、基材上に銅フィルムを生成するための銅前駆体として使用した。基材は、タンタルの250Å層および銅の100Å層付きの二酸化ケイ素ウェハーよりなった。ウェハーは辛うじて識別できる銅色を有した。
Claims (12)
- a.基材を銅錯体(I)と接触させて基材上に銅錯体の蒸着物を形成せしめ、そして
式中、Lが2〜15個の炭素を含んでなるオレフィンであり、
R1およびR4が独立して水素、メチル、エチル、プロピル、イソプロピル、イソブ
チルおよびネオペンチルよりなる群から選択され、
R2およびR3が独立してフェニルおよびC1〜C10アルキル基よりなる群から選
択され、
b.蒸着した銅錯体を還元剤と接触させる
ことを含んでなる基材上での銅蒸着物の形成方法であって、
そして
還元剤が9−BBN、ジボラン、形BRxH3−x(ここで、x=0、1または2で
あり、そしてRは独立してフェニルおよびC1〜C10アルキル基よりなる群から選
択される)のボラン、ジヒドロベンゾフラン、ピラゾリン、ジシラン、形SiR’y
H4−y(ここで、y=0、1、2または3であり、そしてR’は独立してフェニル
およびC1〜C10アルキル基よりなる群から選択される)のシラン、ならびに形G
eR”zH4−z(ここで、z=0、1、2または3であり、そしてR”は独立して
フェニルおよびC1〜C10アルキル基よりなる群から選択される)のゲルマンより
なる群から選択される
方法。 - R2およびR3がメチルであり、かつ、R1およびR4がイソブチルである請求項1に記載の方法。
- Lがビニルトリメチルシランである請求項1に記載の方法。
- 基材が銅、シリコンウェハーおよびバリア層で被覆された二酸化ケイ素よりなる群から選択される請求項1に記載の方法。
- 基材が銅錯体の蒸気に曝される請求項1に記載の方法。
- 蒸着が0〜200℃で実施される請求項1に記載の方法。
- 還元剤がシランまたはジエチルシランである請求項1に記載の方法。
-
式中、Lが2〜15個の炭素を含んでなるオレフィンであり、
R1およびR4が独立して水素、メチル、エチル、プロピル、イソプロピル、イソブチルおよびネオペンチルよりなる群から選択され、
R2およびR3が独立してフェニルおよびC1〜C10アルキル基よりなる群から選択され、
そして
還元剤が9−BBN、ジボラン、形BRxH3−x(ここで、x=0、1または2であり、そしてRは独立してフェニルおよびC1〜C10アルキル基よりなる群から選択される)のボラン、ジヒドロベンゾフラン、ピラゾリン、ジシラン、形SiR’yH4−y(ここで、y=0、1、2または3であり、そしてR’は独立してフェニルおよびC1〜C10アルキル基よりなる群から選択される)のシラン、ならびに形GeR”zH4−z(ここで、z=0、1、2または3であり、そしてR”は独立してフェニルおよびC1〜C10アルキル基よりなる群から選択される)のゲルマンよりなる群から選択される
1,3−ジイミン銅錯体(I)。 - Lがビニルトリメチルシランであり、
R1およびR4が水素、イソブチルおよびネオペンチルの群から選択され、
R2がMeであり、かつ、
R3がMe、Etおよびフェニルよりなる群から選択される
請求項8に記載の1,3−ジイミン銅錯体。 - 基材を請求項8に記載の1,3−ジイミン銅錯体と接触させることによって製造される物品。
- 基材が銅、シリコンウェハーおよびバリア層で被覆された二酸化ケイ素の群から選択される請求項10に記載の物品。
- バリア層がタンタル、窒化タンタル、チタン、窒化チタン、窒化タンタルシリコン、窒化チタンシリコン、窒化タンタルカーボンおよび窒化ニオブよりなる群から選択される請求項11に記載の物品。
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US46317003P | 2003-04-16 | 2003-04-16 | |
PCT/US2004/011734 WO2004094689A2 (en) | 2003-04-16 | 2004-04-16 | Volatile copper(i) complexes for deposition of copper films by atomic layer deposition |
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JP2006523778A true JP2006523778A (ja) | 2006-10-19 |
JP2006523778A5 JP2006523778A5 (ja) | 2007-05-24 |
JP4649402B2 JP4649402B2 (ja) | 2011-03-09 |
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US (2) | US20040247905A1 (ja) |
EP (1) | EP1613789B1 (ja) |
JP (1) | JP4649402B2 (ja) |
KR (1) | KR101132444B1 (ja) |
CN (1) | CN1774523A (ja) |
DE (1) | DE602004018627D1 (ja) |
TW (1) | TWI343367B (ja) |
WO (1) | WO2004094689A2 (ja) |
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JP2005520053A (ja) * | 2002-01-18 | 2005-07-07 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 原子層堆積によって銅薄膜を堆積させるための揮発性銅(ii)錯体 |
US20050227007A1 (en) * | 2004-04-08 | 2005-10-13 | Bradley Alexander Z | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
JP2008508427A (ja) * | 2004-07-30 | 2008-03-21 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 原子層蒸着による銅フィルムの蒸着のための銅(ii)錯体 |
US7205422B2 (en) | 2004-12-30 | 2007-04-17 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate and metal β-diiminate complexes |
US7034169B1 (en) | 2004-12-30 | 2006-04-25 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate complexes |
US7416994B2 (en) * | 2005-06-28 | 2008-08-26 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
US7572731B2 (en) * | 2005-06-28 | 2009-08-11 | Micron Technology, Inc. | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same |
US7439338B2 (en) * | 2005-06-28 | 2008-10-21 | Micron Technology, Inc. | Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same |
US7488435B2 (en) | 2006-08-07 | 2009-02-10 | E. I. Du Pont De Nemours And Company | Copper(I) complexes and processes for deposition of copper films by atomic layer deposition |
WO2008018861A1 (en) * | 2006-08-07 | 2008-02-14 | E. I. Du Pont De Nemours And Company | Copper(i) complexes and processes for deposition of copper films by atomic layer deposition |
US8263795B2 (en) * | 2007-11-05 | 2012-09-11 | Air Products And Chemicals, Inc. | Copper precursors for thin film deposition |
US20090130466A1 (en) * | 2007-11-16 | 2009-05-21 | Air Products And Chemicals, Inc. | Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor |
DE102007058571B4 (de) * | 2007-12-05 | 2012-02-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens |
CN112384639B (zh) * | 2018-07-12 | 2023-09-26 | 巴斯夫欧洲公司 | 生成含金属或半金属膜的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5464666A (en) * | 1995-02-06 | 1995-11-07 | Air Products And Chemicals, Inc. | Process for chemical vapor codeposition of copper and aluminum alloys |
WO2001068580A1 (fr) * | 2000-03-14 | 2001-09-20 | Nissan Chemical Industries, Ltd. | COMPLEXE β-DICETONATOCUIVRE(I) CONTENANT UN COMPOSE ALLENE EN LIGAND ET PROCEDE DE PRODUCTION |
JP2002069088A (ja) * | 2000-04-03 | 2002-03-08 | Air Products & Chemicals Inc | 金属及び金属含有フィルムの堆積のための揮発性先駆物質 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4202889C2 (de) * | 1992-02-01 | 1994-12-15 | Solvay Deutschland | Verfahren zur Abscheidung von ein Metall der ersten Übergangsmetallreihe oder Aluminium enthaltenden Schichten und 1,3-Diketiminato-Metall-Verbindungen |
KR100225686B1 (ko) * | 1995-03-20 | 1999-10-15 | 모리시다 요이치치 | 막형성용 재료 및 배선형성방법 |
US6511936B1 (en) * | 1998-02-12 | 2003-01-28 | University Of Delaware | Catalyst compounds with β-diminate anionic ligands and processes for polymerizing olefins |
US6281124B1 (en) * | 1998-09-02 | 2001-08-28 | Micron Technology, Inc. | Methods and systems for forming metal-containing films on substrates |
JP2001328953A (ja) * | 2000-03-14 | 2001-11-27 | Nissan Chem Ind Ltd | アレン化合物を配位子としたβ−ジケトネート銅(I)錯体およびその製造法 |
US6464779B1 (en) * | 2001-01-19 | 2002-10-15 | Novellus Systems, Inc. | Copper atomic layer chemical vapor desposition |
WO2003044242A2 (en) * | 2001-11-16 | 2003-05-30 | Applied Materials, Inc. | Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors |
JP2005520053A (ja) * | 2002-01-18 | 2005-07-07 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 原子層堆積によって銅薄膜を堆積させるための揮発性銅(ii)錯体 |
US20050227007A1 (en) * | 2004-04-08 | 2005-10-13 | Bradley Alexander Z | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
-
2004
- 2004-04-08 US US10/820,926 patent/US20040247905A1/en not_active Abandoned
- 2004-04-16 KR KR1020057019498A patent/KR101132444B1/ko not_active IP Right Cessation
- 2004-04-16 JP JP2006510108A patent/JP4649402B2/ja not_active Expired - Fee Related
- 2004-04-16 CN CNA2004800098752A patent/CN1774523A/zh active Pending
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- 2004-04-16 EP EP04750189A patent/EP1613789B1/en not_active Expired - Lifetime
- 2004-04-16 US US10/547,917 patent/US20060182884A1/en not_active Abandoned
- 2004-04-16 WO PCT/US2004/011734 patent/WO2004094689A2/en active Application Filing
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5464666A (en) * | 1995-02-06 | 1995-11-07 | Air Products And Chemicals, Inc. | Process for chemical vapor codeposition of copper and aluminum alloys |
WO2001068580A1 (fr) * | 2000-03-14 | 2001-09-20 | Nissan Chemical Industries, Ltd. | COMPLEXE β-DICETONATOCUIVRE(I) CONTENANT UN COMPOSE ALLENE EN LIGAND ET PROCEDE DE PRODUCTION |
JP2002069088A (ja) * | 2000-04-03 | 2002-03-08 | Air Products & Chemicals Inc | 金属及び金属含有フィルムの堆積のための揮発性先駆物質 |
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WO2004094689A2 (en) | 2004-11-04 |
WO2004094689A3 (en) | 2005-01-20 |
JP4649402B2 (ja) | 2011-03-09 |
US20040247905A1 (en) | 2004-12-09 |
KR20060010746A (ko) | 2006-02-02 |
CN1774523A (zh) | 2006-05-17 |
TWI343367B (en) | 2011-06-11 |
TW200500327A (en) | 2005-01-01 |
DE602004018627D1 (de) | 2009-02-05 |
KR101132444B1 (ko) | 2012-03-30 |
EP1613789B1 (en) | 2008-12-24 |
EP1613789A2 (en) | 2006-01-11 |
US20060182884A1 (en) | 2006-08-17 |
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