JP2006522483A - 有機メモリデバイスのためのスピンオンポリマー - Google Patents
有機メモリデバイスのためのスピンオンポリマー Download PDFInfo
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Abstract
Description
(1)炭化水素置換基、つまり、脂肪族(アルキル又はアルケニルなど)、脂環式(シクロアルキル、シクロアルケニル)置換基、アシル、フェニル、芳香族−、脂肪族−、及び脂環式−置換芳香族置換基などに加え、分子の別の部分を通じて環が完成している環状置換基(つまり、上記に示したどの2つの置換基を使っても脂環式ラジカル(alicyclic radical)化することができる)。
(2)置換炭化水素置換基、つまり、本発明の観点から言えば、置換基の主要な有機的特性を変えない非炭化水素基を含む置換基であり、また当業者であればこのような基(ハロ(具体的にはペルフルオロアルキル、ペルフルオロアリルなどのクロロ及びフルオロ)、シアノ、チオシアナト、アミノ、アルキルアミノ、スルホニル、ヒドロキシ、メルカプト、ニトロ、ニトロソ、スルホキシなど)は自明であろう。
(3)ヘテロ原子置換基、つまり、本発明の観点の範囲内で主要な有機特性を有する一方で、環や鎖に存在する炭素以外の原子を含み、又は炭素原子(アルコキシ、アルキルチオなど)からなる。適切なヘテロ原子は当業者にとっては自明であり、適切なヘテロ原子として、硫酸、酸素、窒素、フッ素、塩素、及び、ピリジル、フリル、チェニル、イミダゾリル、イミノ、アミノ、カルバモイルなどの置換基。
Claims (10)
- 有機メモリセルの製造方法であって、
第1電極を用意するステップと、
伝導促進化合物を含む受動層を前記第1電極上に形成するステップと、
スピンオン技術を用いて前記受動層上に有機半導体層を形成するステップとを有し、前記スピンオン技術は、i)共役有機ポリマー、共役有機金属化合物、共役有機金属ポリマー、バッキーボール、及びカーボンナノチューブのうちの少なくとも1つと、ii)グリコールエーテルエステル、グリコールエーテル、フラン、及び約4から約7の炭素原子を含むアルキルアルコールから選択される少なくとも1つの溶剤、との混合物を塗布する技術であって、
前記有機半導体層上に第2電極を提供するステップ、を有する方法。 - 前記溶剤は、エチレングリコールメチルエーテルアセテート、エチレングリコールエチルエーテルアセテート、エチレングリコールプロピルエーテルアセテート、エチレングリコールブチルエーテルアセテート、プロピレングリコールメチルエーテルアセテート、プロピレングリコールエチルエーテルアセテート、プロピレングリコールプロピルエーテルアセテート、プロピレングリコールブチルエーテルアセテート、ポリ(エチレングリコール)メチルエーテルアセテート、ポリ(エチレングリコール)エチルエーテルアセテート、ポリ(エチレングリコール)プロピルエーテルアセテート、ポリ(エチレングリコール)ブチルエーテルアセテート、ポリ(プロピレングリコール)メチルエーテルアセテート、ポリ(プロピレングリコール)エチルエーテルアセテート、ポリ(プロピレングリコール)プロピルエーテルアセテート、及び、ポリ(プロピレングリコール)ブチルエーテルアセテート、からなる群より選択される少なくとも1つのグリコールエーテルエステルを含む、請求項1記載の方法。
- 前記溶剤は、ポリ(エチレングリコール)メチルエーテル、ポリ(エチレングリコール)エチルエーテル、ポリ(エチレングリコール)プロピルエーテル、ポリ(エチレングリコール)ブチルエーテル、ポリ(プロピレングリコール)メチルエーテル、ポリ(プロピレングリコールエチルエーテル、ポリ(プロピレングリコール)プロピルエーテル、ポリ(プロピレングリコール)ブチルエーテル、エチレングリコールメチルエーテル、エチレングリコールメチルブチルエーテル、エチレングリコールエチルブチルエーテル、エチレングリコールエチルエーテル、エチレングリコールブチルエーテル、エチレングリコールジメチルエーテル、エチレングリコールジエチルエーテル、エチレングリコールジブチルエーテル、プロピレングリコールメチルエーテル、プロピレングリコールエチルエーテル、プロピレングリコールブチルエーテル、プロピレングリコールジメチルエーテル、プロピレングリコールジエチルエーテル、及びプロピレングリコールジブチルエーテル、からなる群より選択される少なくとも1つのグリコールエーテルが含まれる、請求項1記載の方法。
- 前記溶剤は、テトラヒドロフラン、n−ブタノール、イソ−ブタノール、n−ペンタノール、イソ−ペンタノール、シクロペンタノール、n−ヘキサノール、シクロヘキサノール、及びヘプタノール、からなる群より選択される少なくとも1つが含まれる、請求項1記載の方法。
- 前記混合物は、i)共役有機ポリマー、共役有機金属化合物、共役有機金属ポリマー、バッキーボール、及びカーボンナノチューブが約0.5wt%から約50wt%、ii)少なくとも1つの溶剤が約50wt%から約99.5wt%含まれる、請求項1記載の方法。
- 前記伝導促進化合物は、硫化銅、酸化銅、酸化マンガン、酸化インジウム、硫化銀、ヒ化ニッケル、ヒ化コバルト、及び酸化鉄、からなる群より選択される少なくとも1つを有し、かつ前記有機半導体層は、ポリアセチレン、ポリフェニルアセチレン、ポリジフェニルアセチレン、ポリアニリン、ポリ(p−フェニレンビニレン)、ポリチオフェン、ポリポルフィリン、ポルフィリン大環状分子、チオール誘導ポリポルフィリン、ポリメタロセン、ポリフタロシアニン、ポリビニレン、及びポリスチロール、からなる群より選択される少なくとも1つの共役有機ポリマーを含む、請求項1記載の方法。
- 有機メモリセルの製造方法であって、
第1電極を用意するステップと、
伝導促進化合物を含む受動層を前記第1電極上に形成するステップと、
スピンオン技術を用いて前記受動層上に有機半導体層を形成するステップを有し、前記スピンオン技術は、i)共役有機ポリマー、共役有機金属化合物、共役有機金属ポリマー、バッキーボール、及びカーボンナノチューブが約0.1wt%から約75wt%、ii)グリコールエーテルエステル、グリコールエーテル、フラン、及び約4から約7の炭素原子を含むアルキルアルコールからなる群より選択される少なくとも1つの溶剤が約25wt%から約99.9wt%含まれる混合物を塗布する技術であって、かつ、
前記有機半導体層上に第2電極を提供するステップ、を有する、方法。 - 前記混合物は約15℃から約80℃の温度であり、また前記溶剤は、エチレングリコールメチルエーテルアセテート、エチレングリコールエチルエーテルアセテート、エチレングリコールプロピルエーテルアセテート、エチレングリコールブチルエーテルアセテート、プロピレングリコールメチルエーテルアセテート、プロピレングリコールエチルエーテルアセテート、プロピレングリコールプロピルエーテルアセテート、プロピレングリコールブチルエーテルアセテート、ポリ(エチレングリコール)メチルエーテルアセテート、ポリ(エチレングリコール)エチルエーテルアセテート、ポリ(エチレングリコール)プロピルエーテルアセテート、ポリ(エチレングリコール)ブチルエーテルアセテート、ポリ(プロピレングリコール)メチルエーテルアセテート、ポリ(プロピレングリコール)エチルエーテルアセテート、ポリ(プロピレングリコール)プロピルエーテルアセテート、及び、ポリ(プロピレングリコール)ブチルエーテルアセテートからなる群より選択される少なくとも1つのグリコールエーテルエステルを含む、請求項7記載の方法。
- 前記伝導促進化合物は、硫化銅、酸化銅、酸化マンガン、二酸化チタン、酸化インジウム、硫化銅、硫化銀、ヒ化ニッケル、ヒ化コバルト、及び酸化鉄、からなる群より選択される少なくとも1つを有し、前記有機半導体層は、ポリアセチレン、ポリフェニルアセチレン、ポリジフェニルアセチレン、ポリアニリン、ポリ(p−フェニレンビニレン)、ポリチオフェン、ポリポルフィリン、ポルフィリン大環状分子、チオール誘導ポリポルフィリン、ポリメタロセン、ポリフタロシアニン、ポリビニレン、及びポリスチロール、からなる群より選択される少なくとも1つの共役有機ポリマーを有する、請求項7記載の方法。
- 有機メモリセルの製造方法であって、
第1電極を提供するステップと、
伝導促進化合物を含む受動層を前記第1電極上に形成するステップと、
スピンオン技術を用いて前記受動層上に有機半導体層を形成するステップを有し、前記スピンオン技術は、i)ポリアセチレン、ポリフェニルアセチレン、ポリジフェニルアセチレン、ポリアニリン、ポリ(p−フェニレンビニレン)、ポロチオフェン、ポロポルフィリン、ポリフィリン大環状分子、チオール誘導ポロポルフィリン、ポリメタロセン、ポロフタロシアニン、ポリビニレン、及びポリスチロール、からなる群より選択される少なくとも1つの共役有機ポリマーが約0.1wt%から約75wt%、ii)少なくとも1つのグリコールエステルが約25wt%から約99.9wt%含まれる混合物を塗布する技術であって、かつ、
前記有機半導体層上に第2電極を用意するステップ、を有する、方法。
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US10/385,375 US6656763B1 (en) | 2003-03-10 | 2003-03-10 | Spin on polymers for organic memory devices |
PCT/US2004/006220 WO2005015635A2 (en) | 2003-03-10 | 2004-03-01 | Spin on polymers for organic memory devices |
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US6656763B1 (en) | 2003-12-02 |
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