JP2006519701A - 表面の非接触洗浄装置及び方法 - Google Patents

表面の非接触洗浄装置及び方法 Download PDF

Info

Publication number
JP2006519701A
JP2006519701A JP2006509172A JP2006509172A JP2006519701A JP 2006519701 A JP2006519701 A JP 2006519701A JP 2006509172 A JP2006509172 A JP 2006509172A JP 2006509172 A JP2006509172 A JP 2006509172A JP 2006519701 A JP2006519701 A JP 2006519701A
Authority
JP
Japan
Prior art keywords
workpiece
flame
torch
flame torch
reactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006509172A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006519701A5 (enExample
Inventor
ジェフリー ダブリュー カー
Original Assignee
ラプト インダストリーズ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ラプト インダストリーズ インコーポレイテッド filed Critical ラプト インダストリーズ インコーポレイテッド
Publication of JP2006519701A publication Critical patent/JP2006519701A/ja
Publication of JP2006519701A5 publication Critical patent/JP2006519701A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G3/00—Apparatus for cleaning or pickling metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K10/00—Welding or cutting by means of a plasma
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/007—Other surface treatment of glass not in the form of fibres or filaments by thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0075—Cleaning of glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thermal Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Metallurgy (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • ing And Chemical Polishing (AREA)
  • Surface Treatment Of Glass (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
JP2006509172A 2003-03-07 2004-03-05 表面の非接触洗浄装置及び方法 Pending JP2006519701A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/384,506 US7371992B2 (en) 2003-03-07 2003-03-07 Method for non-contact cleaning of a surface
PCT/US2004/006773 WO2004081258A2 (en) 2003-03-07 2004-03-05 Apparatus and method for non-contact cleaning of a surface

Publications (2)

Publication Number Publication Date
JP2006519701A true JP2006519701A (ja) 2006-08-31
JP2006519701A5 JP2006519701A5 (enExample) 2007-03-29

Family

ID=32927277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006509172A Pending JP2006519701A (ja) 2003-03-07 2004-03-05 表面の非接触洗浄装置及び方法

Country Status (5)

Country Link
US (3) US7371992B2 (enExample)
EP (1) EP1611268A2 (enExample)
JP (1) JP2006519701A (enExample)
KR (1) KR20050116813A (enExample)
WO (1) WO2004081258A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008057012A (ja) * 2006-08-31 2008-03-13 Seiko Epson Corp プラズマ処理装置およびプラズマ処理方法
JP2012053120A (ja) * 2010-08-31 2012-03-15 Hoya Corp マスクブランク用基板及びマスクブランクの製造方法
KR20210000356A (ko) * 2019-06-24 2021-01-05 세메스 주식회사 기판 처리 장치 및 방법

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US6660177B2 (en) 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
SG96665A1 (en) * 2001-11-21 2003-06-16 Environmental Technology Inst An apparatus and method for cleaning glass substrates using a cool hydrogen flame
US20070066076A1 (en) * 2005-09-19 2007-03-22 Bailey Joel B Substrate processing method and apparatus using a combustion flame
US7511246B2 (en) 2002-12-12 2009-03-31 Perkinelmer Las Inc. Induction device for generating a plasma
US7297892B2 (en) * 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
US20080093358A1 (en) * 2004-09-01 2008-04-24 Amarante Technologies, Inc. Portable Microwave Plasma Discharge Unit
US7271363B2 (en) * 2004-09-01 2007-09-18 Noritsu Koki Co., Ltd. Portable microwave plasma systems including a supply line for gas and microwaves
EP1855833B1 (en) * 2005-03-11 2020-02-26 PerkinElmer, Inc. Plasma devices and method of using them
US7742167B2 (en) 2005-06-17 2010-06-22 Perkinelmer Health Sciences, Inc. Optical emission device with boost device
US8622735B2 (en) 2005-06-17 2014-01-07 Perkinelmer Health Sciences, Inc. Boost devices and methods of using them
US7312154B2 (en) 2005-12-20 2007-12-25 Corning Incorporated Method of polishing a semiconductor-on-insulator structure
TW200729292A (en) * 2005-12-22 2007-08-01 Qimonda Ag Apparatus for preserving and using at least one photolithograph projection photo mask and the method using the same in the exposure apparatus
WO2008005521A1 (en) * 2006-07-07 2008-01-10 Accretech Usa, Inc. Wafer processing apparatus and method
US7837805B2 (en) * 2007-08-29 2010-11-23 Micron Technology, Inc. Methods for treating surfaces
KR20110044195A (ko) 2008-06-09 2011-04-28 포코 그래파이트, 인코포레이티드 서브-애퍼쳐 반응성 원자 식각을 이용하는 성분의 전처리에 의해 반도체 제조 유닛의 수율을 증가시키고 고장 시간을 저감하는 방법
US8691331B2 (en) * 2009-02-09 2014-04-08 Prashant D. Santan Surface modification of hydrophobic and/or oleophobic coatings
US20110076853A1 (en) * 2009-09-28 2011-03-31 Magic Technologies, Inc. Novel process method for post plasma etch treatment
SG183177A1 (en) * 2010-02-26 2012-09-27 Perkinelmer Health Sci Inc Jet assembly for use in detectors and other devices
US20110250547A1 (en) 2010-04-12 2011-10-13 Ford Global Technologies, Llc Burner system and a method of control
CN205166151U (zh) 2012-07-13 2016-04-20 魄金莱默保健科学有限公司 火炬和用于维持原子化源的系统
JP6323849B2 (ja) 2012-08-28 2018-05-16 アジレント・テクノロジーズ・インクＡｇｉｌｅｎｔ Ｔｅｃｈｎｏｌｏｇｉｅｓ， Ｉｎｃ． 電磁導波路およびプラズマ源を含む機器、プラズマ生成方法
US20140196748A1 (en) * 2013-01-11 2014-07-17 California Institute Of Technology Protective devices and methods for precision application of cleaning polymer to optics
US9427821B2 (en) 2013-03-15 2016-08-30 Agilent Technologies, Inc. Integrated magnetron plasma torch, and related methods
WO2018189655A1 (en) * 2017-04-10 2018-10-18 Perkinelmer Health Sciences Canada, Inc. Torches and systems and methods using them
ES2696227B2 (es) * 2018-07-10 2019-06-12 Centro De Investig Energeticas Medioambientales Y Tecnologicas Ciemat Fuente de iones interna para ciclotrones de baja erosion
KR102679694B1 (ko) * 2020-10-19 2024-07-02 세메스 주식회사 부품 세정 장치 및 부품 세정 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235652A (ja) * 1985-08-09 1987-02-16 Hitachi Ltd 表面処理法とその処理装置
JPS63283027A (ja) * 1987-05-15 1988-11-18 Toshiba Corp 半導体の洗浄方法
JP2002501304A (ja) * 1998-01-07 2002-01-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド その場ウエハ洗浄プロセス
WO2002062111A2 (en) * 2001-01-30 2002-08-08 Rapt Industries Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for surface modification
JP2002231675A (ja) * 2001-02-02 2002-08-16 Tokyo Electron Ltd 被処理体の処理方法及び処理装置

Family Cites Families (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2224991A5 (enExample) * 1973-04-05 1974-10-31 France Etat
BE806181A (fr) * 1973-10-17 1974-02-15 Soudure Autogene Elect Procede d'amorcage d'une colonne de plasma a l'interieur d'une enceinte et canne-electrode pour l'execution dudit procede
JPS50153024A (enExample) 1974-05-31 1975-12-09
LU71343A1 (enExample) 1974-11-22 1976-03-17
JPS5673539A (en) 1979-11-22 1981-06-18 Toshiba Corp Surface treating apparatus of microwave plasma
US4306175A (en) 1980-02-29 1981-12-15 Instrumentation Laboratory Inc. Induction plasma system
US4431898A (en) 1981-09-01 1984-02-14 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
US4431901A (en) 1982-07-02 1984-02-14 The United States Of America As Represented By The United States Department Of Energy Induction plasma tube
US4689467A (en) 1982-12-17 1987-08-25 Inoue-Japax Research Incorporated Laser machining apparatus
JPS59159167A (ja) 1983-03-01 1984-09-08 Zenko Hirose アモルフアスシリコン膜の形成方法
FR2555392B1 (fr) * 1983-11-17 1986-08-22 Air Liquide Procede de traitement thermique, notamment de coupage, par un jet de plasma
US4668366A (en) * 1984-08-02 1987-05-26 The Perkin-Elmer Corporation Optical figuring by plasma assisted chemical transport and etching apparatus therefor
JPS63289798A (ja) 1987-05-21 1988-11-28 Babcock Hitachi Kk 高周波誘導プラズマト−チ
FR2616614B1 (fr) 1987-06-10 1989-10-20 Air Liquide Torche a plasma micro-onde, dispositif comportant une telle torche et procede pour la fabrication de poudre les mettant en oeuvre
JP2805009B2 (ja) 1988-05-11 1998-09-30 株式会社日立製作所 プラズマ発生装置及びプラズマ元素分析装置
US5106827A (en) 1989-09-18 1992-04-21 The Perkin Elmer Corporation Plasma assisted oxidation of perovskites for forming high temperature superconductors using inductively coupled discharges
US6068784A (en) 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
CA2037660C (en) 1990-03-07 1997-08-19 Tadashi Kamimura Methods of modifying surface qualities of metallic articles and apparatuses therefor
US5256205A (en) 1990-05-09 1993-10-26 Jet Process Corporation Microwave plasma assisted supersonic gas jet deposition of thin film materials
US5200595A (en) 1991-04-12 1993-04-06 Universite De Sherbrooke High performance induction plasma torch with a water-cooled ceramic confinement tube
US5254830A (en) 1991-05-07 1993-10-19 Hughes Aircraft Company System for removing material from semiconductor wafers using a contained plasma
RU2030811C1 (ru) 1991-05-24 1995-03-10 Инженерный центр "Плазмодинамика" Установка для плазменной обработки твердого тела
US5820940A (en) * 1991-09-05 1998-10-13 Technalum Research, Inc. Preparation of adhesive coatings from thermally reactive binary and multicomponent powders
US5349154A (en) 1991-10-16 1994-09-20 Rockwell International Corporation Diamond growth by microwave generated plasma flame
US5336355A (en) 1991-12-13 1994-08-09 Hughes Aircraft Company Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films
US5290382A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5291415A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Method to determine tool paths for thinning and correcting errors in thickness profiles of films
US5280154A (en) 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5238532A (en) 1992-02-27 1993-08-24 Hughes Aircraft Company Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching
US5376224A (en) 1992-02-27 1994-12-27 Hughes Aircraft Company Method and apparatus for non-contact plasma polishing and smoothing of uniformly thinned substrates
US5292400A (en) 1992-03-23 1994-03-08 Hughes Aircraft Company Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching
EP0565376B1 (en) 1992-04-10 1998-07-22 Canon Kabushiki Kaisha Optical information recording apparatus and method capable of coping with a plurality of card-like recording mediums of different reflectances
EP0595159B1 (de) 1992-10-26 1997-12-29 Schott Glaswerke Verfahren und Vorrichtung zur Beschichtung der Innenfläche stark gewölbter im wesentlichen kalottenförmiger Substrate mittels CVD
US5429730A (en) 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
US5346578A (en) 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
US5386119A (en) 1993-03-25 1995-01-31 Hughes Aircraft Company Apparatus and method for thick wafer measurement
US5372674A (en) 1993-05-14 1994-12-13 Hughes Aircraft Company Electrode for use in a plasma assisted chemical etching process
US5344524A (en) 1993-06-30 1994-09-06 Honeywell Inc. SOI substrate fabrication
US5298103A (en) 1993-07-15 1994-03-29 Hughes Aircraft Company Electrode assembly useful in confined plasma assisted chemical etching
US5430355A (en) 1993-07-30 1995-07-04 Texas Instruments Incorporated RF induction plasma source for plasma processing
US5364496A (en) 1993-08-20 1994-11-15 Hughes Aircraft Company Highly durable noncontaminating surround materials for plasma etching
US5419803A (en) 1993-11-17 1995-05-30 Hughes Aircraft Company Method of planarizing microstructures
US5375064A (en) 1993-12-02 1994-12-20 Hughes Aircraft Company Method and apparatus for moving a material removal tool with low tool accelerations
FR2722939B1 (fr) 1994-07-22 1996-08-23 Alcatel Fibres Optiques Torche a plasma par induction
US5563709A (en) 1994-09-13 1996-10-08 Integrated Process Equipment Corp. Apparatus for measuring, thinning and flattening silicon structures
US5811022A (en) 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5811021A (en) 1995-02-28 1998-09-22 Hughes Electronics Corporation Plasma assisted chemical transport method and apparatus
US5591068A (en) 1995-03-13 1997-01-07 Regents Of The University Of California Precision non-contact polishing tool
US6821500B2 (en) * 1995-03-14 2004-11-23 Bechtel Bwxt Idaho, Llc Thermal synthesis apparatus and process
US5795493A (en) 1995-05-01 1998-08-18 Motorola, Inc. Laser assisted plasma chemical etching method
US5688415A (en) 1995-05-30 1997-11-18 Ipec Precision, Inc. Localized plasma assisted chemical etching through a mask
US5650032A (en) 1995-06-06 1997-07-22 International Business Machines Corporation Apparatus for producing an inductive plasma for plasma processes
JP3877082B2 (ja) 1995-08-10 2007-02-07 東京エレクトロン株式会社 研磨装置及び研磨方法
JPH0964321A (ja) 1995-08-24 1997-03-07 Komatsu Electron Metals Co Ltd Ｓｏｉ基板の製造方法
JPH0969397A (ja) 1995-08-31 1997-03-11 Hitachi Ltd 誘導結合プラズマ発生装置
US5965034A (en) 1995-12-04 1999-10-12 Mc Electronics Co., Ltd. High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
US6017221A (en) 1995-12-04 2000-01-25 Flamm; Daniel L. Process depending on plasma discharges sustained by inductive coupling
US5683548A (en) 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process
JPH09252100A (ja) 1996-03-18 1997-09-22 Shin Etsu Handotai Co Ltd 結合ウェーハの製造方法及びこの方法により製造される結合ウェーハ
JP3620554B2 (ja) 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JP3252702B2 (ja) 1996-03-28 2002-02-04 信越半導体株式会社 気相エッチング工程を含む半導体単結晶鏡面ウエーハの製造方法およびこの方法で製造される半導体単結晶鏡面ウエーハ
WO1997039607A1 (en) 1996-04-12 1997-10-23 Hitachi, Ltd. Plasma treatment device
US5928527A (en) * 1996-04-15 1999-07-27 The Boeing Company Surface modification using an atmospheric pressure glow discharge plasma source
EP0902962B1 (en) 1996-05-31 2001-09-26 IPEC Precision, Inc. Apparatus for plasma jet treatment of substrates
KR20000016136A (ko) 1996-05-31 2000-03-25 피터 무몰라 플라즈마 제트로 제품을 처리하는 방법
US6040548A (en) 1996-05-31 2000-03-21 Ipec Precision, Inc. Apparatus for generating and deflecting a plasma jet
US6209480B1 (en) 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US5897712A (en) 1996-07-16 1999-04-27 Applied Materials, Inc. Plasma uniformity control for an inductive plasma source
US6056848A (en) 1996-09-11 2000-05-02 Ctp, Inc. Thin film electrostatic shield for inductive plasma processing
US5767627A (en) 1997-01-09 1998-06-16 Trusi Technologies, Llc Plasma generation and plasma processing of materials
US5955383A (en) 1997-01-22 1999-09-21 Taiwan Semiconductor Manufacturing Company Ltd. Method for controlling etch rate when using consumable electrodes during plasma etching
US5961772A (en) 1997-01-23 1999-10-05 The Regents Of The University Of California Atmospheric-pressure plasma jet
US5800621A (en) 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
JP3333110B2 (ja) 1997-04-23 2002-10-07 積水化学工業株式会社 放電プラズマを利用した表面処理方法
FR2764163B1 (fr) * 1997-05-30 1999-08-13 Centre Nat Rech Scient Torche a plasma inductif a injecteur de reactif
US5877471A (en) 1997-06-11 1999-03-02 The Regents Of The University Of California Plasma torch having a cooled shield assembly
DE19734278C1 (de) 1997-08-07 1999-02-25 Bosch Gmbh Robert Vorrichtung zum anisotropen Ätzen von Substraten
JP3327180B2 (ja) 1997-08-29 2002-09-24 信越半導体株式会社 Ｓｏｉ層上酸化膜の形成方法ならびに結合ウエーハの製造方法およびこの方法で製造される結合ウエーハ
US6482476B1 (en) * 1997-10-06 2002-11-19 Shengzhong Frank Liu Low temperature plasma enhanced CVD ceramic coating process for metal, alloy and ceramic materials
US6194036B1 (en) 1997-10-20 2001-02-27 The Regents Of The University Of California Deposition of coatings using an atmospheric pressure plasma jet
US6139678A (en) 1997-11-20 2000-10-31 Trusi Technologies, Llc Plasma processing methods and apparatus
US6093655A (en) 1998-02-12 2000-07-25 Micron Technology, Inc. Plasma etching methods
US6230719B1 (en) * 1998-02-27 2001-05-15 Micron Technology, Inc. Apparatus for removing contaminants on electronic devices
US6085688A (en) 1998-03-27 2000-07-11 Applied Materials, Inc. Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor
DE19814812C2 (de) 1998-04-02 2000-05-11 Mut Mikrowellen Umwelt Technol Plasmabrenner mit einem Mikrowellensender
US6074947A (en) 1998-07-10 2000-06-13 Plasma Sil, Llc Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching
US6218640B1 (en) * 1999-07-19 2001-04-17 Timedomain Cvd, Inc. Atmospheric pressure inductive plasma apparatus
US6406590B1 (en) * 1998-09-08 2002-06-18 Sharp Kaubushiki Kaisha Method and apparatus for surface treatment using plasma
KR100277833B1 (ko) 1998-10-09 2001-01-15 정선종 라디오파 유도 플라즈마 소스 발생장치
EP0997926B1 (en) * 1998-10-26 2006-01-04 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method
JP3814431B2 (ja) 1998-12-03 2006-08-30 松下電器産業株式会社 半導体装置の製造方法
JP2000174004A (ja) 1998-12-03 2000-06-23 Chemitoronics Co Ltd プラズマエッチングの方法およびその装置
JP2000183044A (ja) 1998-12-11 2000-06-30 Chemitoronics Co Ltd プラズマエッチング装置およびエッチングの方法
US6028286A (en) 1998-12-30 2000-02-22 Lam Research Corporation Method for igniting a plasma inside a plasma processing reactor
US6579805B1 (en) * 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
US6153852A (en) 1999-02-12 2000-11-28 Thermal Conversion Corp Use of a chemically reactive plasma for thermal-chemical processes
US6262523B1 (en) * 1999-04-21 2001-07-17 The Regents Of The University Of California Large area atmospheric-pressure plasma jet
US6239553B1 (en) 1999-04-22 2001-05-29 Applied Materials, Inc. RF plasma source for material processing
DE19925790A1 (de) 1999-06-05 2000-12-07 Inst Oberflaechenmodifizierung Verfahren und Vorrichtung zur Bearbeitung von optischen und anderen Oberflächen mittels Hochrate-Plasmaprozessen
US6228330B1 (en) 1999-06-08 2001-05-08 The Regents Of The University Of California Atmospheric-pressure plasma decontamination/sterilization chamber
US6200908B1 (en) 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
US6103184A (en) * 1999-09-13 2000-08-15 Heck; Philip Hand-held torch circle cutter
US6229111B1 (en) 1999-10-13 2001-05-08 The University Of Tennessee Research Corporation Method for laser/plasma surface alloying
US6203661B1 (en) 1999-12-07 2001-03-20 Trusi Technologies, Llc Brim and gas escape for non-contact wafer holder
US6468833B2 (en) * 2000-03-31 2002-10-22 American Air Liquide, Inc. Systems and methods for application of substantially dry atmospheric plasma surface treatment to various electronic component packaging and assembly methods
AUPQ861500A0 (en) 2000-07-06 2000-08-03 Varian Australia Pty Ltd Plasma source for spectrometry
US6491978B1 (en) * 2000-07-10 2002-12-10 Applied Materials, Inc. Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors
US7351449B2 (en) * 2000-09-22 2008-04-01 N Gimat Co. Chemical vapor deposition methods for making powders and coatings, and coatings made using these methods
US6929865B2 (en) * 2000-10-24 2005-08-16 James J. Myrick Steel reinforced concrete systems
JP2002170815A (ja) 2000-12-01 2002-06-14 Matsushita Electric Works Ltd 表面処理装置及び表面処理方法
DE10104615A1 (de) 2001-02-02 2002-08-14 Bosch Gmbh Robert Verfahren zur Erzeugung einer Funktionsbeschichtung mit einer HF-ICP-Plasmastrahlquelle
US6849306B2 (en) * 2001-08-23 2005-02-01 Konica Corporation Plasma treatment method at atmospheric pressure
US6660177B2 (en) 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
US20040118348A1 (en) 2002-03-07 2004-06-24 Mills Randell L.. Microwave power cell, chemical reactor, and power converter

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235652A (ja) * 1985-08-09 1987-02-16 Hitachi Ltd 表面処理法とその処理装置
JPS63283027A (ja) * 1987-05-15 1988-11-18 Toshiba Corp 半導体の洗浄方法
JP2002501304A (ja) * 1998-01-07 2002-01-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド その場ウエハ洗浄プロセス
WO2002062111A2 (en) * 2001-01-30 2002-08-08 Rapt Industries Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for surface modification
JP2002231675A (ja) * 2001-02-02 2002-08-16 Tokyo Electron Ltd 被処理体の処理方法及び処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008057012A (ja) * 2006-08-31 2008-03-13 Seiko Epson Corp プラズマ処理装置およびプラズマ処理方法
JP2012053120A (ja) * 2010-08-31 2012-03-15 Hoya Corp マスクブランク用基板及びマスクブランクの製造方法
KR20210000356A (ko) * 2019-06-24 2021-01-05 세메스 주식회사 기판 처리 장치 및 방법
KR102299883B1 (ko) * 2019-06-24 2021-09-09 세메스 주식회사 기판 처리 장치 및 방법

Also Published As

Publication number Publication date
US20040173580A1 (en) 2004-09-09
US20040173579A1 (en) 2004-09-09
WO2004081258A3 (en) 2005-12-22
WO2004081258A2 (en) 2004-09-23
EP1611268A2 (en) 2006-01-04
KR20050116813A (ko) 2005-12-13
US20080083425A1 (en) 2008-04-10
US7371992B2 (en) 2008-05-13

Similar Documents

Publication Publication Date Title
US7371992B2 (en) Method for non-contact cleaning of a surface
US7297892B2 (en) Systems and methods for laser-assisted plasma processing
US6660177B2 (en) Apparatus and method for reactive atom plasma processing for material deposition
US7591957B2 (en) Method for atmospheric pressure reactive atom plasma processing for surface modification
US20080035612A1 (en) Systems and Methods Utilizing an Aperture with a Reactive Atom Plasma Torch
Ichiki et al. Localized and ultrahigh-rate etching of silicon wafers using atmospheric-pressure microplasma jets
CN101331594B (zh) 处理装置、处理方法及等离子源
TWI410744B (zh) 用於處理光微影倍縮光罩的方法
US20050184034A1 (en) Method for using a microwave source for reactive atom-plasma processing
KR20200115273A (ko) 텅스텐 또는 다른 금속층의 원자층 에칭
US20080296258A1 (en) Plenum reactor system
CN111684567B (zh) 非晶碳层的打开处理
JPH1187324A (ja) プラズマ処理方法
JP2001319925A (ja) プラズマエッチング装置
JPH0635663B2 (ja) 表面処理方法および装置
JPS6343322A (ja) アツシング装置
Chang et al. Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor
CN115870279A (zh) 一种晶圆清洗装置及使用方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070206

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070206

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090403

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090518

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20090818

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090825

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091116

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091214

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100315

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100323

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100806