JP2006516302A - アルキル−水素シロキサンの分解を防止する添加剤 - Google Patents
アルキル−水素シロキサンの分解を防止する添加剤 Download PDFInfo
- Publication number
- JP2006516302A JP2006516302A JP2004537889A JP2004537889A JP2006516302A JP 2006516302 A JP2006516302 A JP 2006516302A JP 2004537889 A JP2004537889 A JP 2004537889A JP 2004537889 A JP2004537889 A JP 2004537889A JP 2006516302 A JP2006516302 A JP 2006516302A
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- JP
- Japan
- Prior art keywords
- methylphenyl
- branched
- straight chain
- formula
- substituted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 0 CC1C2C1C*C2 Chemical compound CC1C2C1C*C2 0.000 description 3
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/05—Alcohols; Metal alcoholates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/13—Phenols; Phenolates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Silicon Polymers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41165102P | 2002-09-18 | 2002-09-18 | |
PCT/US2003/029183 WO2004027110A2 (en) | 2002-09-18 | 2003-09-18 | Additives to prevent degradation of alkyl-hydrogen siloxanes |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006516302A true JP2006516302A (ja) | 2006-06-29 |
Family
ID=32030703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004537889A Pending JP2006516302A (ja) | 2002-09-18 | 2003-09-18 | アルキル−水素シロキサンの分解を防止する添加剤 |
Country Status (6)
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005263640A (ja) * | 2004-03-16 | 2005-09-29 | Sumitomo Chemical Co Ltd | 有機ケイ素系化合物、及びその製造方法 |
JP2005294333A (ja) * | 2004-03-31 | 2005-10-20 | Semiconductor Process Laboratory Co Ltd | 成膜方法及び半導体装置 |
JP2009102317A (ja) * | 2007-10-15 | 2009-05-14 | Air Products & Chemicals Inc | 置換されたシクロテトラシロキサンの重合を抑制する安定剤 |
JP5614589B2 (ja) * | 2009-02-06 | 2014-10-29 | 独立行政法人物質・材料研究機構 | 絶縁膜材料を用いた成膜方法および絶縁膜 |
WO2017141796A1 (ja) * | 2016-02-15 | 2017-08-24 | 国立研究開発法人産業技術総合研究所 | シロキサン及びその製造方法 |
KR20230043295A (ko) * | 2021-09-23 | 2023-03-31 | (주)제이아이테크 | 페놀 계열의 수소-규소 결합의 안정성 개선을 위한 첨가제 |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7456488B2 (en) | 2002-11-21 | 2008-11-25 | Advanced Technology Materials, Inc. | Porogen material |
US7423166B2 (en) * | 2001-12-13 | 2008-09-09 | Advanced Technology Materials, Inc. | Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films |
US7101948B2 (en) | 2001-12-21 | 2006-09-05 | Air Products And Chemicals, Inc. | Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane |
RU2319786C2 (ru) * | 2002-06-28 | 2008-03-20 | Смс Демаг Акциенгезелльшафт | Применение разделяющего газа при непрерывном нанесении покрытия погружением в расплав |
US7646081B2 (en) | 2003-07-08 | 2010-01-12 | Silecs Oy | Low-K dielectric material |
JP3788624B1 (ja) * | 2005-01-18 | 2006-06-21 | 旭電化工業株式会社 | シロキサン化合物及びフェノール化合物を含有してなる組成物 |
EP2256123B1 (en) * | 2005-01-31 | 2013-08-14 | Tosoh Corporation | Cyclic siloxane compound, a material for forming Si-containing film, and its use |
US8513448B2 (en) | 2005-01-31 | 2013-08-20 | Tosoh Corporation | Cyclic siloxane compound, a material for forming Si-containing film, and its use |
US7871536B2 (en) | 2005-09-12 | 2011-01-18 | Fujifilm Electronic Materials U.S.A., Inc. | Additives to prevent degradation of cyclic alkene derivatives |
WO2007033123A2 (en) * | 2005-09-12 | 2007-03-22 | Fujifilm Electronic Materials U.S.A., Inc. | Additives to prevent degradation of cyclic alkene derivatives |
US7883639B2 (en) * | 2005-09-12 | 2011-02-08 | Fujifilm Electronic Materials, U.S.A., Inc. | Additives to prevent degradation of cyclic alkene derivatives |
JP4641933B2 (ja) * | 2005-11-28 | 2011-03-02 | 三井化学株式会社 | 薄膜形成方法 |
JP2007157870A (ja) * | 2005-12-02 | 2007-06-21 | Renesas Technology Corp | 半導体装置及びその製造方法 |
US8053375B1 (en) | 2006-11-03 | 2011-11-08 | Advanced Technology Materials, Inc. | Super-dry reagent compositions for formation of ultra low k films |
US20080141901A1 (en) * | 2006-12-18 | 2008-06-19 | American Air Liquide, Inc. | Additives to stabilize cyclotetrasiloxane and its derivatives |
DE102006060355A1 (de) * | 2006-12-20 | 2008-06-26 | Wacker Chemie Ag | Verfahren zur Herstellung von Tetramethylcyclotetrasiloxan |
ES2426666T3 (es) * | 2007-01-12 | 2013-10-24 | Utilx Corporation | Composición y procedimiento para restaurar un cable eléctrico e inhibir la corrosión en el núcleo conductor de aluminio |
US8173213B2 (en) | 2008-05-28 | 2012-05-08 | Air Products And Chemicals, Inc. | Process stability of NBDE using substituted phenol stabilizers |
WO2015157202A1 (en) | 2014-04-09 | 2015-10-15 | Corning Incorporated | Device modified substrate article and methods for making |
US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
US11091370B2 (en) | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
US9657409B2 (en) | 2013-05-02 | 2017-05-23 | Melior Innovations, Inc. | High purity SiOC and SiC, methods compositions and applications |
US9919972B2 (en) | 2013-05-02 | 2018-03-20 | Melior Innovations, Inc. | Pressed and self sintered polymer derived SiC materials, applications and devices |
US10322936B2 (en) | 2013-05-02 | 2019-06-18 | Pallidus, Inc. | High purity polysilocarb materials, applications and processes |
US11014819B2 (en) | 2013-05-02 | 2021-05-25 | Pallidus, Inc. | Methods of providing high purity SiOC and SiC materials |
US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
US10046542B2 (en) | 2014-01-27 | 2018-08-14 | Corning Incorporated | Articles and methods for controlled bonding of thin sheets with carriers |
KR102573207B1 (ko) | 2015-05-19 | 2023-08-31 | 코닝 인코포레이티드 | 시트와 캐리어의 결합을 위한 물품 및 방법 |
CN107810168A (zh) | 2015-06-26 | 2018-03-16 | 康宁股份有限公司 | 包含板材和载体的方法和制品 |
TW201825623A (zh) | 2016-08-30 | 2018-07-16 | 美商康寧公司 | 用於片材接合的矽氧烷電漿聚合物 |
TWI810161B (zh) | 2016-08-31 | 2023-08-01 | 美商康寧公司 | 具以可控制式黏結的薄片之製品及製作其之方法 |
WO2019118660A1 (en) | 2017-12-15 | 2019-06-20 | Corning Incorporated | Method for treating a substrate and method for making articles comprising bonded sheets |
JP6875336B2 (ja) * | 2018-08-27 | 2021-05-26 | 信越化学工業株式会社 | 成膜方法 |
CN113801155B (zh) * | 2020-06-15 | 2023-10-31 | 中国石油化工股份有限公司 | 适用于制备石英砂防吸附亲水涂层的化学剂及其制备和应用 |
CN113030295B (zh) * | 2021-02-08 | 2023-02-03 | 广州海关技术中心 | 一种气相色谱-质谱/质谱法同时测定硅橡胶制品中21种硅氧烷类化合物的残留量的方法 |
CN116355007A (zh) * | 2023-03-31 | 2023-06-30 | 京东方科技集团股份有限公司 | 六元杂环结构的有机化合物、电致发光器件及显示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51113887A (en) * | 1975-03-12 | 1976-10-07 | Gen Electric | Stabilizing method of hexamethylcyclotrisiloxane and stabtlized product |
US5118735A (en) * | 1990-10-05 | 1992-06-02 | Hercules Incorporated | Organosilicon composition comprising stabilizers |
JPH06508176A (ja) * | 1992-01-15 | 1994-09-14 | フラメル・テクノロギー | ポリシラン系組成物 |
JPH07145179A (ja) * | 1993-11-26 | 1995-06-06 | Shin Etsu Chem Co Ltd | 低分子量ポリメチルシクロポリシロキサンの安定化方法 |
JP2003238578A (ja) * | 2001-12-21 | 2003-08-27 | Air Products & Chemicals Inc | シクロテトラシロキサンの安定化方法及び組成物 |
Family Cites Families (14)
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US4234441A (en) * | 1979-04-27 | 1980-11-18 | Olin Corporation | Silicone oil compositions containing silicate cluster compounds |
US5028566A (en) * | 1987-04-10 | 1991-07-02 | Air Products And Chemicals, Inc. | Method of forming silicon dioxide glass films |
DE4123423A1 (de) * | 1991-07-15 | 1993-01-21 | Wacker Chemie Gmbh | Alkenylgruppen aufweisende siloxancopolymere, deren herstellung und verwendung |
US5177142A (en) * | 1991-08-22 | 1993-01-05 | General Electric Company | Silicone release coating compositions |
US5470800A (en) * | 1992-04-03 | 1995-11-28 | Sony Corporation | Method for forming an interlayer film |
ES2210506T3 (es) * | 1996-11-08 | 2004-07-01 | Rhodia Chimie | Composiciones reticulables que contienen aceites de siliconas funcionalizados y utilizacion de estas composiciones para preparar peliculas de poliuretanos. |
EP0978539A4 (en) * | 1997-04-24 | 2000-04-12 | Kaneka Corp | IMPACT RESISTANT THERMOPLASTIC RESIN COMPOSITION |
US5783719A (en) * | 1997-05-13 | 1998-07-21 | Lexmark International, Inc. | Method for making silicone copolymers |
US7108771B2 (en) * | 2001-12-13 | 2006-09-19 | Advanced Technology Materials, Inc. | Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films |
US7423166B2 (en) * | 2001-12-13 | 2008-09-09 | Advanced Technology Materials, Inc. | Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films |
US7101948B2 (en) * | 2001-12-21 | 2006-09-05 | Air Products And Chemicals, Inc. | Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane |
TWI317749B (en) * | 2002-02-15 | 2009-12-01 | Kaneka Corp | Graft copolymers and impact-resistant flame-retardant resin compositions containing the same |
AU2003228495A1 (en) * | 2002-04-11 | 2003-10-27 | Honeywell International Inc. | Thermally conductive coating compositions, methods of production and uses thereof |
KR20040106396A (ko) * | 2002-04-30 | 2004-12-17 | 카네카 코포레이션 | 폴리오르가노실록산 함유 그래프트 공중합체 조성물 |
-
2003
- 2003-09-18 JP JP2004537889A patent/JP2006516302A/ja active Pending
- 2003-09-18 TW TW92125785A patent/TWI302908B/zh not_active IP Right Cessation
- 2003-09-18 KR KR1020057004778A patent/KR20050089147A/ko not_active Application Discontinuation
- 2003-09-18 EP EP03752426A patent/EP1573086A4/en not_active Withdrawn
- 2003-09-18 US US10/665,739 patent/US7129311B2/en active Active
- 2003-09-18 WO PCT/US2003/029183 patent/WO2004027110A2/en active Application Filing
-
2006
- 2006-02-24 US US11/361,723 patent/US20060159861A1/en not_active Abandoned
- 2006-07-31 US US11/496,135 patent/US7531590B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51113887A (en) * | 1975-03-12 | 1976-10-07 | Gen Electric | Stabilizing method of hexamethylcyclotrisiloxane and stabtlized product |
US5118735A (en) * | 1990-10-05 | 1992-06-02 | Hercules Incorporated | Organosilicon composition comprising stabilizers |
JPH06508176A (ja) * | 1992-01-15 | 1994-09-14 | フラメル・テクノロギー | ポリシラン系組成物 |
JPH07145179A (ja) * | 1993-11-26 | 1995-06-06 | Shin Etsu Chem Co Ltd | 低分子量ポリメチルシクロポリシロキサンの安定化方法 |
JP2003238578A (ja) * | 2001-12-21 | 2003-08-27 | Air Products & Chemicals Inc | シクロテトラシロキサンの安定化方法及び組成物 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005263640A (ja) * | 2004-03-16 | 2005-09-29 | Sumitomo Chemical Co Ltd | 有機ケイ素系化合物、及びその製造方法 |
JP4539131B2 (ja) * | 2004-03-16 | 2010-09-08 | 住友化学株式会社 | 有機ケイ素系化合物、及びその製造方法 |
JP2005294333A (ja) * | 2004-03-31 | 2005-10-20 | Semiconductor Process Laboratory Co Ltd | 成膜方法及び半導体装置 |
JP2009102317A (ja) * | 2007-10-15 | 2009-05-14 | Air Products & Chemicals Inc | 置換されたシクロテトラシロキサンの重合を抑制する安定剤 |
JP5614589B2 (ja) * | 2009-02-06 | 2014-10-29 | 独立行政法人物質・材料研究機構 | 絶縁膜材料を用いた成膜方法および絶縁膜 |
WO2017141796A1 (ja) * | 2016-02-15 | 2017-08-24 | 国立研究開発法人産業技術総合研究所 | シロキサン及びその製造方法 |
KR20230043295A (ko) * | 2021-09-23 | 2023-03-31 | (주)제이아이테크 | 페놀 계열의 수소-규소 결합의 안정성 개선을 위한 첨가제 |
KR102567948B1 (ko) * | 2021-09-23 | 2023-08-21 | (주)제이아이테크 | 페놀 계열의 수소-규소 결합의 안정성 개선을 위한 첨가제 |
Also Published As
Publication number | Publication date |
---|---|
EP1573086A4 (en) | 2012-10-03 |
US7531590B2 (en) | 2009-05-12 |
TWI302908B (en) | 2008-11-11 |
EP1573086A2 (en) | 2005-09-14 |
TW200404769A (en) | 2004-04-01 |
KR20050089147A (ko) | 2005-09-07 |
WO2004027110A3 (en) | 2006-04-06 |
US20040127070A1 (en) | 2004-07-01 |
US20060270787A1 (en) | 2006-11-30 |
WO2004027110A2 (en) | 2004-04-01 |
US20060159861A1 (en) | 2006-07-20 |
US7129311B2 (en) | 2006-10-31 |
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A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060706 |
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