JP2006516302A - アルキル−水素シロキサンの分解を防止する添加剤 - Google Patents

アルキル−水素シロキサンの分解を防止する添加剤 Download PDF

Info

Publication number
JP2006516302A
JP2006516302A JP2004537889A JP2004537889A JP2006516302A JP 2006516302 A JP2006516302 A JP 2006516302A JP 2004537889 A JP2004537889 A JP 2004537889A JP 2004537889 A JP2004537889 A JP 2004537889A JP 2006516302 A JP2006516302 A JP 2006516302A
Authority
JP
Japan
Prior art keywords
methylphenyl
branched
straight chain
formula
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004537889A
Other languages
English (en)
Japanese (ja)
Inventor
ダニエル・ジェイ・テフ
グレゴリー・ビー・スミス
ジョン・エル・チャゴラ
ティム・エス・アーンドレイカ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Electronic Materials USA Inc
Original Assignee
Fujifilm Electronic Materials USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials USA Inc filed Critical Fujifilm Electronic Materials USA Inc
Publication of JP2006516302A publication Critical patent/JP2006516302A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/05—Alcohols; Metal alcoholates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/13—Phenols; Phenolates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
JP2004537889A 2002-09-18 2003-09-18 アルキル−水素シロキサンの分解を防止する添加剤 Pending JP2006516302A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41165102P 2002-09-18 2002-09-18
PCT/US2003/029183 WO2004027110A2 (en) 2002-09-18 2003-09-18 Additives to prevent degradation of alkyl-hydrogen siloxanes

Publications (1)

Publication Number Publication Date
JP2006516302A true JP2006516302A (ja) 2006-06-29

Family

ID=32030703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004537889A Pending JP2006516302A (ja) 2002-09-18 2003-09-18 アルキル−水素シロキサンの分解を防止する添加剤

Country Status (6)

Country Link
US (3) US7129311B2 (US20040127070A1-20040701-C00008.png)
EP (1) EP1573086A4 (US20040127070A1-20040701-C00008.png)
JP (1) JP2006516302A (US20040127070A1-20040701-C00008.png)
KR (1) KR20050089147A (US20040127070A1-20040701-C00008.png)
TW (1) TWI302908B (US20040127070A1-20040701-C00008.png)
WO (1) WO2004027110A2 (US20040127070A1-20040701-C00008.png)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005263640A (ja) * 2004-03-16 2005-09-29 Sumitomo Chemical Co Ltd 有機ケイ素系化合物、及びその製造方法
JP2005294333A (ja) * 2004-03-31 2005-10-20 Semiconductor Process Laboratory Co Ltd 成膜方法及び半導体装置
JP2009102317A (ja) * 2007-10-15 2009-05-14 Air Products & Chemicals Inc 置換されたシクロテトラシロキサンの重合を抑制する安定剤
JP5614589B2 (ja) * 2009-02-06 2014-10-29 独立行政法人物質・材料研究機構 絶縁膜材料を用いた成膜方法および絶縁膜
WO2017141796A1 (ja) * 2016-02-15 2017-08-24 国立研究開発法人産業技術総合研究所 シロキサン及びその製造方法
KR20230043295A (ko) * 2021-09-23 2023-03-31 (주)제이아이테크 페놀 계열의 수소-규소 결합의 안정성 개선을 위한 첨가제

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7456488B2 (en) 2002-11-21 2008-11-25 Advanced Technology Materials, Inc. Porogen material
US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
US7101948B2 (en) * 2001-12-21 2006-09-05 Air Products And Chemicals, Inc. Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
RU2319786C2 (ru) * 2002-06-28 2008-03-20 Смс Демаг Акциенгезелльшафт Применение разделяющего газа при непрерывном нанесении покрытия погружением в расплав
WO2005004221A2 (en) * 2003-07-08 2005-01-13 Silecs Oy Low-k-dielectric material
JP3788624B1 (ja) * 2005-01-18 2006-06-21 旭電化工業株式会社 シロキサン化合物及びフェノール化合物を含有してなる組成物
WO2006080205A1 (ja) * 2005-01-31 2006-08-03 Tosoh Corporation 環状シロキサン化合物、Ｓｉ含有膜形成材料、およびその用途
US8513448B2 (en) 2005-01-31 2013-08-20 Tosoh Corporation Cyclic siloxane compound, a material for forming Si-containing film, and its use
EP1931613B1 (en) * 2005-09-12 2015-11-11 FujiFilm Electronic Materials USA, Inc. Additives to prevent degradation of cyclic alkene derivatives
US7871536B2 (en) * 2005-09-12 2011-01-18 Fujifilm Electronic Materials U.S.A., Inc. Additives to prevent degradation of cyclic alkene derivatives
WO2007033123A2 (en) * 2005-09-12 2007-03-22 Fujifilm Electronic Materials U.S.A., Inc. Additives to prevent degradation of cyclic alkene derivatives
JP4641933B2 (ja) * 2005-11-28 2011-03-02 三井化学株式会社 薄膜形成方法
JP2007157870A (ja) * 2005-12-02 2007-06-21 Renesas Technology Corp 半導体装置及びその製造方法
US8053375B1 (en) 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
US20080141901A1 (en) * 2006-12-18 2008-06-19 American Air Liquide, Inc. Additives to stabilize cyclotetrasiloxane and its derivatives
DE102006060355A1 (de) * 2006-12-20 2008-06-26 Wacker Chemie Ag Verfahren zur Herstellung von Tetramethylcyclotetrasiloxan
AU2007343635B2 (en) * 2007-01-12 2010-10-14 Utilx Corporation Composition and method for restoring an electrical cable and inhibiting corrosion in the aluminum conductor core
US8173213B2 (en) 2008-05-28 2012-05-08 Air Products And Chemicals, Inc. Process stability of NBDE using substituted phenol stabilizers
US10543662B2 (en) 2012-02-08 2020-01-28 Corning Incorporated Device modified substrate article and methods for making
US9340443B2 (en) 2012-12-13 2016-05-17 Corning Incorporated Bulk annealing of glass sheets
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US11014819B2 (en) 2013-05-02 2021-05-25 Pallidus, Inc. Methods of providing high purity SiOC and SiC materials
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
CN106132688B (zh) 2014-01-27 2020-07-14 康宁股份有限公司 用于薄片与载体的受控粘结的制品和方法
SG11201608442TA (en) 2014-04-09 2016-11-29 Corning Inc Device modified substrate article and methods for making
EP3297824A1 (en) 2015-05-19 2018-03-28 Corning Incorporated Articles and methods for bonding sheets with carriers
WO2016209897A1 (en) 2015-06-26 2016-12-29 Corning Incorporated Methods and articles including a sheet and a carrier
TW201825623A (zh) 2016-08-30 2018-07-16 美商康寧公司 用於片材接合的矽氧烷電漿聚合物
TWI810161B (zh) 2016-08-31 2023-08-01 美商康寧公司 具以可控制式黏結的薄片之製品及製作其之方法
WO2019118660A1 (en) 2017-12-15 2019-06-20 Corning Incorporated Method for treating a substrate and method for making articles comprising bonded sheets
JP6875336B2 (ja) * 2018-08-27 2021-05-26 信越化学工業株式会社 成膜方法
CN113801155B (zh) * 2020-06-15 2023-10-31 中国石油化工股份有限公司 适用于制备石英砂防吸附亲水涂层的化学剂及其制备和应用
CN113030295B (zh) * 2021-02-08 2023-02-03 广州海关技术中心 一种气相色谱-质谱/质谱法同时测定硅橡胶制品中21种硅氧烷类化合物的残留量的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113887A (en) * 1975-03-12 1976-10-07 Gen Electric Stabilizing method of hexamethylcyclotrisiloxane and stabtlized product
US5118735A (en) * 1990-10-05 1992-06-02 Hercules Incorporated Organosilicon composition comprising stabilizers
JPH06508176A (ja) * 1992-01-15 1994-09-14 フラメル・テクノロギー ポリシラン系組成物
JPH07145179A (ja) * 1993-11-26 1995-06-06 Shin Etsu Chem Co Ltd 低分子量ポリメチルシクロポリシロキサンの安定化方法
JP2003238578A (ja) * 2001-12-21 2003-08-27 Air Products & Chemicals Inc シクロテトラシロキサンの安定化方法及び組成物

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234441A (en) 1979-04-27 1980-11-18 Olin Corporation Silicone oil compositions containing silicate cluster compounds
US5028566A (en) * 1987-04-10 1991-07-02 Air Products And Chemicals, Inc. Method of forming silicon dioxide glass films
DE4123423A1 (de) * 1991-07-15 1993-01-21 Wacker Chemie Gmbh Alkenylgruppen aufweisende siloxancopolymere, deren herstellung und verwendung
US5177142A (en) * 1991-08-22 1993-01-05 General Electric Company Silicone release coating compositions
US5470800A (en) * 1992-04-03 1995-11-28 Sony Corporation Method for forming an interlayer film
EP0937111B1 (fr) * 1996-11-08 2004-01-28 Rhodia Chimie Compositions reticulables contenant des huiles silicones fonctionnalisees et utilisation de ces compositions pour preparer des films polyurethannes
KR100656124B1 (ko) * 1997-04-24 2006-12-20 카네카 코포레이션 내충격성 열가소성 수지 조성물
US5783719A (en) * 1997-05-13 1998-07-21 Lexmark International, Inc. Method for making silicone copolymers
US7108771B2 (en) * 2001-12-13 2006-09-19 Advanced Technology Materials, Inc. Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
US7101948B2 (en) 2001-12-21 2006-09-05 Air Products And Chemicals, Inc. Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
TWI317749B (en) * 2002-02-15 2009-12-01 Kaneka Corp Graft copolymers and impact-resistant flame-retardant resin compositions containing the same
WO2003088315A2 (en) * 2002-04-11 2003-10-23 Honeywell International Inc. Thermally conductive coating compositions, methods of production and uses thereof
CN100429272C (zh) * 2002-04-30 2008-10-29 株式会社钟化 含聚有机硅氧烷的接枝共聚物组合物

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113887A (en) * 1975-03-12 1976-10-07 Gen Electric Stabilizing method of hexamethylcyclotrisiloxane and stabtlized product
US5118735A (en) * 1990-10-05 1992-06-02 Hercules Incorporated Organosilicon composition comprising stabilizers
JPH06508176A (ja) * 1992-01-15 1994-09-14 フラメル・テクノロギー ポリシラン系組成物
JPH07145179A (ja) * 1993-11-26 1995-06-06 Shin Etsu Chem Co Ltd 低分子量ポリメチルシクロポリシロキサンの安定化方法
JP2003238578A (ja) * 2001-12-21 2003-08-27 Air Products & Chemicals Inc シクロテトラシロキサンの安定化方法及び組成物

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005263640A (ja) * 2004-03-16 2005-09-29 Sumitomo Chemical Co Ltd 有機ケイ素系化合物、及びその製造方法
JP4539131B2 (ja) * 2004-03-16 2010-09-08 住友化学株式会社 有機ケイ素系化合物、及びその製造方法
JP2005294333A (ja) * 2004-03-31 2005-10-20 Semiconductor Process Laboratory Co Ltd 成膜方法及び半導体装置
JP2009102317A (ja) * 2007-10-15 2009-05-14 Air Products & Chemicals Inc 置換されたシクロテトラシロキサンの重合を抑制する安定剤
JP5614589B2 (ja) * 2009-02-06 2014-10-29 独立行政法人物質・材料研究機構 絶縁膜材料を用いた成膜方法および絶縁膜
WO2017141796A1 (ja) * 2016-02-15 2017-08-24 国立研究開発法人産業技術総合研究所 シロキサン及びその製造方法
KR20230043295A (ko) * 2021-09-23 2023-03-31 (주)제이아이테크 페놀 계열의 수소-규소 결합의 안정성 개선을 위한 첨가제
KR102567948B1 (ko) * 2021-09-23 2023-08-21 (주)제이아이테크 페놀 계열의 수소-규소 결합의 안정성 개선을 위한 첨가제

Also Published As

Publication number Publication date
US20060270787A1 (en) 2006-11-30
US20060159861A1 (en) 2006-07-20
TWI302908B (en) 2008-11-11
US20040127070A1 (en) 2004-07-01
US7129311B2 (en) 2006-10-31
KR20050089147A (ko) 2005-09-07
EP1573086A4 (en) 2012-10-03
WO2004027110A3 (en) 2006-04-06
TW200404769A (en) 2004-04-01
EP1573086A2 (en) 2005-09-14
US7531590B2 (en) 2009-05-12
WO2004027110A2 (en) 2004-04-01

Similar Documents

Publication Publication Date Title
US7531590B2 (en) Additives to prevent degradation of alkyl-hydrogen siloxanes
JP5491123B2 (ja) シクロテトラシロキサンを重合に対し安定化する方法及び組成物
JP4897510B2 (ja) シクロテトラシロキサンの安定化方法及び組成物
KR101378826B1 (ko) 사이클릭 알켄 유도체의 분해를 방지하기 위한 첨가제
KR101478636B1 (ko) 사이클릭 알켄 유도체의 분해를 방지하기 위한 첨가제
US20080042105A1 (en) Stabilizers To Inhibit The Polymerization of Substituted Cyclotetrasiloxane
WO2020077183A1 (en) Process for producing liquid polysilanes and isomer enriched higher silanes
TWI723510B (zh) 穩定的含烯基或炔基的有機矽前驅物組合物
US20080141901A1 (en) Additives to stabilize cyclotetrasiloxane and its derivatives

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060706

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091006

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20091224

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100106

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100608