JP2006509707A - ガリウム含有窒化物のバルク単結晶を得るための改良されたプロセス - Google Patents

ガリウム含有窒化物のバルク単結晶を得るための改良されたプロセス Download PDF

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Publication number
JP2006509707A
JP2006509707A JP2004558480A JP2004558480A JP2006509707A JP 2006509707 A JP2006509707 A JP 2006509707A JP 2004558480 A JP2004558480 A JP 2004558480A JP 2004558480 A JP2004558480 A JP 2004558480A JP 2006509707 A JP2006509707 A JP 2006509707A
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Japan
Prior art keywords
group
gallium
ions
mineralizer
nitride
Prior art date
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Pending
Application number
JP2004558480A
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English (en)
Japanese (ja)
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JP2006509707A5 (enExample
Inventor
ロベルト・ドヴィリニスキ
ロマン・ドラジニスキ
イエジ・ガルチニスキ
レシェック・シェシュプトフスキ
神原　康雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ammono Sp zoo
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Ammono Sp zoo
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Filing date
Publication date
Priority claimed from PL357695A external-priority patent/PL232211B1/pl
Priority claimed from PL357706A external-priority patent/PL221055B1/pl
Priority claimed from PL02357704A external-priority patent/PL357704A1/xx
Application filed by Ammono Sp zoo filed Critical Ammono Sp zoo
Publication of JP2006509707A publication Critical patent/JP2006509707A/ja
Publication of JP2006509707A5 publication Critical patent/JP2006509707A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2004558480A 2002-12-11 2003-12-11 ガリウム含有窒化物のバルク単結晶を得るための改良されたプロセス Pending JP2006509707A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
PL357695A PL232211B1 (pl) 2002-12-11 2002-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal w środowisku nadkrytycznego rozpuszczalnika amoniakalnego
PL357706A PL221055B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania objętościowego monokrystalicznego azotku zawierającego gal
PL02357704A PL357704A1 (en) 2002-12-11 2002-12-11 Method of obtaining voluminal mono-crystalline nitride containing gallium
PCT/JP2003/015903 WO2004053208A1 (en) 2002-12-11 2003-12-11 Process for obtaining bulk-crystalline gallium-containing nitride

Publications (2)

Publication Number Publication Date
JP2006509707A true JP2006509707A (ja) 2006-03-23
JP2006509707A5 JP2006509707A5 (enExample) 2007-06-28

Family

ID=32512152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004558480A Pending JP2006509707A (ja) 2002-12-11 2003-12-11 ガリウム含有窒化物のバルク単結晶を得るための改良されたプロセス

Country Status (5)

Country Link
US (1) US7314517B2 (enExample)
JP (1) JP2006509707A (enExample)
AU (1) AU2003285766A1 (enExample)
PL (1) PL225430B1 (enExample)
WO (1) WO2004053208A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9096945B2 (en) 2011-10-28 2015-08-04 Mitsubishi Chemical Corporation Method for producing nitride crystal and nitride crystal

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY141883A (en) * 2001-06-06 2010-07-16 Ammono Sp Zoo Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride
CN1300901C (zh) * 2001-10-26 2007-02-14 波兰商艾蒙诺公司 使用氮化物块状单晶层的发光元件结构
US7125453B2 (en) 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US7063741B2 (en) 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
JP4416648B2 (ja) * 2002-05-17 2010-02-17 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 発光素子の製造方法
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
US7410539B2 (en) 2002-12-11 2008-08-12 Ammono Sp. Z O.O. Template type substrate and a method of preparing the same
JP4824313B2 (ja) * 2002-12-11 2011-11-30 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン ガリウム含有窒化物バルク単結晶を得るためのプロセス、得られた結晶から不純物を排除するためのプロセス、及びガリウム含有窒化物バルク単結晶からなる基板を製造するためのプロセス
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
US7859008B2 (en) 2002-12-27 2010-12-28 Momentive Performance Materials Inc. Crystalline composition, wafer, device, and associated method
US7638815B2 (en) 2002-12-27 2009-12-29 Momentive Performance Materials Inc. Crystalline composition, wafer, and semi-conductor structure
US7786503B2 (en) 2002-12-27 2010-08-31 Momentive Performance Materials Inc. Gallium nitride crystals and wafers and method of making
US8357945B2 (en) 2002-12-27 2013-01-22 Momentive Performance Materials Inc. Gallium nitride crystal and method of making same
US9279193B2 (en) 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
PL1769105T3 (pl) 2004-06-11 2014-11-28 Ammono S A Objętościowy monokrystaliczny azotek galu oraz sposób jego wytwarzania
WO2005122232A1 (en) 2004-06-11 2005-12-22 Ammono Sp. Z O.O. High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
PL371405A1 (pl) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7704324B2 (en) 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
US7521732B2 (en) 2005-11-18 2009-04-21 General Electric Company Vertical heterostructure field effect transistor and associated method
US7942970B2 (en) 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
US20110300051A1 (en) * 2008-11-07 2011-12-08 The Regents Of The University Of California Group-iii nitride monocrystal with improved purity and method of producing the same
US8960657B2 (en) 2011-10-05 2015-02-24 Sunedison, Inc. Systems and methods for connecting an ingot to a wire saw

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024921A1 (en) * 1999-10-06 2001-04-12 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7346396A (en) * 1995-10-13 1997-04-30 Centrum Badan Wysokocisnieniowych Method of manufacturing epitaxial layers of gan or ga(a1,in)n on single crystal gan and mixed ga(a1,in)n substrates
FR2796657B1 (fr) * 1999-07-20 2001-10-26 Thomson Csf Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique
MY141883A (en) * 2001-06-06 2010-07-16 Ammono Sp Zoo Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride
JP4693351B2 (ja) * 2001-10-26 2011-06-01 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシャル成長用基板

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024921A1 (en) * 1999-10-06 2001-04-12 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9096945B2 (en) 2011-10-28 2015-08-04 Mitsubishi Chemical Corporation Method for producing nitride crystal and nitride crystal
US9518337B2 (en) 2011-10-28 2016-12-13 Mitsubishi Chemical Corporation Method for producing nitride crystal and nitride crystal
US10526726B2 (en) 2011-10-28 2020-01-07 Mitsubishi Chemical Corporation Method for producing nitride crystal and nitride crystal
US11162190B2 (en) 2011-10-28 2021-11-02 Mitsubishi Chemical Corporation Method for producing nitride crystal and nitride crystal

Also Published As

Publication number Publication date
AU2003285766A1 (en) 2004-06-30
PL225430B1 (pl) 2017-04-28
PL379548A1 (pl) 2006-10-16
US7314517B2 (en) 2008-01-01
WO2004053208A1 (en) 2004-06-24
AU2003285766A8 (en) 2004-06-30
US20060120931A1 (en) 2006-06-08

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