JP2006507521A - フォトレジスト用の反射防止膜組成物 - Google Patents
フォトレジスト用の反射防止膜組成物 Download PDFInfo
- Publication number
- JP2006507521A JP2006507521A JP2004552529A JP2004552529A JP2006507521A JP 2006507521 A JP2006507521 A JP 2006507521A JP 2004552529 A JP2004552529 A JP 2004552529A JP 2004552529 A JP2004552529 A JP 2004552529A JP 2006507521 A JP2006507521 A JP 2006507521A
- Authority
- JP
- Japan
- Prior art keywords
- polymer
- composition
- photoresist
- carbon atoms
- substituted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 113
- 239000006117 anti-reflective coating Substances 0.000 title claims abstract description 71
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 94
- 229920000642 polymer Polymers 0.000 claims abstract description 117
- 239000002253 acid Substances 0.000 claims abstract description 39
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 33
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 21
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 11
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 10
- 150000002367 halogens Chemical class 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 6
- 125000005647 linker group Chemical group 0.000 claims abstract description 5
- -1 alkoxyalkylene Chemical group 0.000 claims description 30
- 238000000576 coating method Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 27
- 239000011248 coating agent Substances 0.000 claims description 26
- 230000003667 anti-reflective effect Effects 0.000 claims description 14
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 12
- 125000001931 aliphatic group Chemical group 0.000 claims description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 9
- 239000000178 monomer Substances 0.000 claims description 8
- 125000004171 alkoxy aryl group Chemical group 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 125000001072 heteroaryl group Chemical group 0.000 claims description 7
- 125000003107 substituted aryl group Chemical group 0.000 claims description 7
- 125000003342 alkenyl group Chemical group 0.000 claims description 6
- 150000002009 diols Chemical class 0.000 claims description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 6
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 5
- 125000001624 naphthyl group Chemical group 0.000 claims description 5
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 125000004183 alkoxy alkyl group Chemical group 0.000 claims description 4
- 125000002877 alkyl aryl group Chemical group 0.000 claims description 4
- 125000000592 heterocycloalkyl group Chemical group 0.000 claims description 4
- 125000005113 hydroxyalkoxy group Chemical group 0.000 claims description 4
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 4
- 229920000877 Melamine resin Polymers 0.000 claims description 3
- 125000001046 glycoluril group Chemical group [H]C12N(*)C(=O)N(*)C1([H])N(*)C(=O)N2* 0.000 claims description 3
- 125000001188 haloalkyl group Chemical group 0.000 claims description 3
- 125000006588 heterocycloalkylene group Chemical group 0.000 claims description 3
- 150000007974 melamines Chemical group 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 125000006832 (C1-C10) alkylene group Chemical group 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims description 2
- STOLYTNTPGXYRW-UHFFFAOYSA-N [nitro(phenyl)methyl] 4-methylbenzenesulfonate Chemical group C1=CC(C)=CC=C1S(=O)(=O)OC([N+]([O-])=O)C1=CC=CC=C1 STOLYTNTPGXYRW-UHFFFAOYSA-N 0.000 claims description 2
- 229920006037 cross link polymer Polymers 0.000 claims description 2
- 125000002993 cycloalkylene group Chemical group 0.000 claims description 2
- 239000012948 isocyanate Substances 0.000 claims description 2
- 150000002513 isocyanates Chemical class 0.000 claims description 2
- 125000004971 nitroalkyl group Chemical group 0.000 claims description 2
- 229920003986 novolac Polymers 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 229920001230 polyarylate Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims 1
- UROWAZWGAADJLH-UHFFFAOYSA-N [nitro(phenyl)methyl] benzenesulfonate Chemical class C=1C=CC=CC=1C([N+](=O)[O-])OS(=O)(=O)C1=CC=CC=C1 UROWAZWGAADJLH-UHFFFAOYSA-N 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 3
- 150000001721 carbon Chemical group 0.000 abstract description 2
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 63
- 239000000243 solution Substances 0.000 description 50
- 238000006243 chemical reaction Methods 0.000 description 35
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 29
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 21
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 20
- 125000003118 aryl group Chemical group 0.000 description 18
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 16
- 229940116333 ethyl lactate Drugs 0.000 description 16
- 239000002904 solvent Substances 0.000 description 16
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- HTZCNXWZYVXIMZ-UHFFFAOYSA-M benzyl(triethyl)azanium;chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC1=CC=CC=C1 HTZCNXWZYVXIMZ-UHFFFAOYSA-M 0.000 description 14
- 238000005530 etching Methods 0.000 description 11
- 239000012299 nitrogen atmosphere Substances 0.000 description 11
- 125000001424 substituent group Chemical group 0.000 description 11
- UIMAOHVEKLXJDO-UHFFFAOYSA-N (7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonate;triethylazanium Chemical compound CCN(CC)CC.C1CC2(CS(O)(=O)=O)C(=O)CC1C2(C)C UIMAOHVEKLXJDO-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000001816 cooling Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 125000004184 methoxymethyl group Chemical group [H]C([H])([H])OC([H])([H])* 0.000 description 10
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 10
- 238000010992 reflux Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 9
- 239000012776 electronic material Substances 0.000 description 9
- 238000009472 formulation Methods 0.000 description 9
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical compound N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 9
- 229920000728 polyester Polymers 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- 238000004132 cross linking Methods 0.000 description 8
- 238000001914 filtration Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 7
- 239000000975 dye Substances 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229930195733 hydrocarbon Natural products 0.000 description 5
- 239000011541 reaction mixture Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 125000000753 cycloalkyl group Chemical group 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- PWMWNFMRSKOCEY-UHFFFAOYSA-N 1-Phenyl-1,2-ethanediol Chemical compound OCC(O)C1=CC=CC=C1 PWMWNFMRSKOCEY-UHFFFAOYSA-N 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- LOTYADDQWWVBDJ-UHFFFAOYSA-N 2-methyl-2-nitropropane-1,3-diol Chemical compound OCC(C)(CO)[N+]([O-])=O LOTYADDQWWVBDJ-UHFFFAOYSA-N 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- LVDKZNITIUWNER-UHFFFAOYSA-N Bronopol Chemical compound OCC(Br)(CO)[N+]([O-])=O LVDKZNITIUWNER-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000000706 filtrate Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KUMMBDBTERQYCG-UHFFFAOYSA-N 2,6-bis(hydroxymethyl)-4-methylphenol Chemical compound CC1=CC(CO)=C(O)C(CO)=C1 KUMMBDBTERQYCG-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 239000004971 Cross linker Substances 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 125000005346 substituted cycloalkyl group Chemical group 0.000 description 2
- 125000005717 substituted cycloalkylene group Chemical group 0.000 description 2
- 150000003871 sulfonates Chemical class 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- GCIYMCNGLUNWNR-UHFFFAOYSA-N (2,4-dinitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O GCIYMCNGLUNWNR-UHFFFAOYSA-N 0.000 description 1
- MCJPJAJHPRCILL-UHFFFAOYSA-N (2,6-dinitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=C([N+]([O-])=O)C=CC=C1[N+]([O-])=O MCJPJAJHPRCILL-UHFFFAOYSA-N 0.000 description 1
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 description 1
- QXTKWWMLNUQOLB-UHFFFAOYSA-N (4-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=C([N+]([O-])=O)C=C1 QXTKWWMLNUQOLB-UHFFFAOYSA-N 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 1
- JWTDCPGVNRBTKT-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)phenoxy]ethanol Chemical compound OCCOC1=CC=CC=C1OCCO JWTDCPGVNRBTKT-UHFFFAOYSA-N 0.000 description 1
- PDHFSBXFZGYBIP-UHFFFAOYSA-N 2-[2-(2-hydroxyethylsulfanyl)ethylsulfanyl]ethanol Chemical compound OCCSCCSCCO PDHFSBXFZGYBIP-UHFFFAOYSA-N 0.000 description 1
- BNCADMBVWNPPIZ-UHFFFAOYSA-N 2-n,2-n,4-n,4-n,6-n,6-n-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound COCN(COC)C1=NC(N(COC)COC)=NC(N(COC)COC)=N1 BNCADMBVWNPPIZ-UHFFFAOYSA-N 0.000 description 1
- IWYVYUZADLIDEY-UHFFFAOYSA-M 4-methoxybenzenesulfonate Chemical compound COC1=CC=C(S([O-])(=O)=O)C=C1 IWYVYUZADLIDEY-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical class C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- 241000534944 Thia Species 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HPFQPSQWZLFDMC-UHFFFAOYSA-N [2-nitro-6-(trifluoromethyl)phenyl]methyl 4-chlorobenzenesulfonate Chemical compound [O-][N+](=O)C1=CC=CC(C(F)(F)F)=C1COS(=O)(=O)C1=CC=C(Cl)C=C1 HPFQPSQWZLFDMC-UHFFFAOYSA-N 0.000 description 1
- DATWRUPPMDEMOY-UHFFFAOYSA-N [2-nitro-6-(trifluoromethyl)phenyl]methyl 4-nitrobenzenesulfonate Chemical compound C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)OCC1=C([N+]([O-])=O)C=CC=C1C(F)(F)F DATWRUPPMDEMOY-UHFFFAOYSA-N 0.000 description 1
- BWVAOONFBYYRHY-UHFFFAOYSA-N [4-(hydroxymethyl)phenyl]methanol Chemical compound OCC1=CC=C(CO)C=C1 BWVAOONFBYYRHY-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229920006109 alicyclic polymer Polymers 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- 125000005466 alkylenyl group Chemical group 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical class OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- 238000012662 bulk polymerization Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000013877 carbamide Nutrition 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920001688 coating polymer Polymers 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000000392 cycloalkenyl group Chemical group 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- WIOHBOKEUIHYIC-UHFFFAOYSA-N diethyl 2,2-bis(hydroxymethyl)propanedioate Chemical compound CCOC(=O)C(CO)(CO)C(=O)OCC WIOHBOKEUIHYIC-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- OZLBDYMWFAHSOQ-UHFFFAOYSA-N diphenyliodanium Chemical class C=1C=CC=CC=1[I+]C1=CC=CC=C1 OZLBDYMWFAHSOQ-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 125000006502 nitrobenzyl group Chemical group 0.000 description 1
- 125000000018 nitroso group Chemical group N(=O)* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 125000004354 sulfur functional group Chemical group 0.000 description 1
- 238000010557 suspension polymerization reaction Methods 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- 238000006276 transfer reaction Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical class C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/109—Polyester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Paints Or Removers (AREA)
- Polyesters Or Polycarbonates (AREA)
Abstract
【化1】
[式中、Yは、炭素原子数1〜約10のヒドロカルビル結合基であり、R、R1、R’及びR”は、独立して、水素、炭素原子数1〜約10のヒドロカルビル基、ハロゲン、-O(CO)Z、-C(CF3)2Z、-C(CF3)2(CO)OZ、-SO2CF3、-(CO)OZ、-SO3Z、-COZ、-OZ、-NZ2、-SZ、-SO2Z、-NHCOZ、-NZCOZまたは-SO2NZ2であり、ZはHまたは炭素原子数1〜約10のヒドロカルビル基であり、nは1〜4であり、XはO、CO、S、COO、CH2O、CH2COO、SO2、NH、NL、OWO、OW、Wであり、L及びWは、炭素原子数1〜約10のヒドロカルビル基であり、そしてmは0〜3である]
Description
(1) 炭化水素基、すなわち、脂肪族置換基(例えばアルキル、アルキレニルまたはアルケニル)、脂環式置換基(例えばシクロアルキル、シクロアルケニル); 及び芳香族基、脂肪族基もしくは脂環式基が置換した芳香族置換基、並びに環が分子の他の部分を介して完結しているような環状の置換基(例えば、二つの置換基が一緒になって脂環式基を形成しているような場合);
(2) 炭素及び水素以外の原子を含むが、性質は主として炭化水素である炭化水素基。前記他の原子の例は、硫黄、酸素または窒素であり、これらは単独で存在していてもよいし(例えばチアまたはエーテル)、または官能性結合として存在していてもよい(例えばエステル、カルボキシ、カルボニルなど);
(3) 置換された炭化水素基、すなわち、本発明に関連してその主として炭化水素の置換基を変化させない非炭化水素系の基(例えば、ハロゲン(特に塩素及びフッ素)、ヒドロキシ、アルコキシ、メルカプト、アルキルメルカプト、ニトロ、ニトロソ、及びスルホキシ)を含む置換基;
(4) ヘテロ置換基、すなわち、主として炭化水素の性質を持ちながらも、本発明に関連して、他の部分では炭素から構成される環もしくは鎖中に炭素以外の元素を含む置換基。ヘテロ原子としては、硫黄、酸素、窒素などが挙げられ、そしてピリジル、フリル、チエニル及びイミダゾリルなどの置換基が包含される。一般的に、せいぜい二つ、好ましくはせいぜい一つの非炭化水素系の置換基が、ヒドロカルビル基中の10個の炭素原子当たりに存在する。ただし典型的には、ヒドロカルビル基中に非炭化水素系置換基は存在しない。
ピロメリト酸二無水物1.0モルを、冷却器及び機械的攪拌機を装備した1Lフラスコ中でアセトニトリル300g中に懸濁させた。次いで、当モル量のエチレングリコールを加えた。窒素雰囲気下に、この混合物を穏やかな還流下に加熱した。約30分後、僅かに黄色であるが、しかし透明の溶液が得られた。反応をこの温度で6時間維持し、そして室温に冷却した。反応中に生じた白色の固形物を濾別して廃棄した。透明な濾液を2Lフラスコに移した。これに、エチレンカーボネート300g及びベンジルトリエチルアンモニウムクロライド5gを加えた。この混合物を120℃に加熱しそして16時間維持した。反応が完了したら、反応溶液を室温に冷却し、そして高速ブレンダー中で多量の水中にゆっくりと注ぎ入れた。ポリマーを集め、そして水で十分に洗浄した。最後に、ポリマーを減圧炉中で乾燥した。
ピロメリト酸二無水物1.0モルを、冷却器及び機械的攪拌機を備えた1Lフラスコ中でアセトニトリル300g中に懸濁させた。次いで、当モルのエチレングリコールを加えた。窒素雰囲気下に、この混合物を穏やかな還流下に加熱した。反応を24時間続けた。この反応混合物を室温に冷却した後、更に数時間、攪拌を続けた。反応中に生じた白色の析出物を吸引して集め、そしてアセトニトリルで十分に洗浄した。得られた固形物を減圧炉中で1日間乾燥した。
ピロメリト酸二無水物1.0モルを、冷却器及び機械的攪拌機を装備した1Lフラスコ中で、アセトニトリル300g中に懸濁させた。次いで、当モルのエチレングリコールを加えた。窒素雰囲気中で、この混合物を穏やかな還流下に加熱した。反応を24時間続けた。この反応混合物を室温まで冷却した後、攪拌を数時間続けた。反応中に生じた白色の析出物を吸引して集め、そしてアセトニトリルで十分に洗浄した。得られた固形物を、減圧炉中で1日間乾燥した。
ピロメリト酸二無水物1.0モルを、機械的攪拌機を備えた1Lフラスコ中でエチレンカーボネート600g中に溶解した。次いで、当モル量のエチレングリコールを加えた。窒素雰囲気中で、この反応混合物を120℃に加熱した。反応を7時間続けた。次いで、ベンジルトリエチルアンモニウムクロライド10gを加え、そして同じ温度で反応を更に16時間続けた。この反応溶液を冷却、濾過した。濾液を、攪拌しながら多量の水中にゆっくりと注ぎ入れた。生じた白色のポリマーを濾過して集め、そして水で十分に洗浄した後、減圧炉中で乾燥した。
エチレンカーボネート300gを、機械的攪拌機を備えた1Lフラスコ中で加温して液体とした。これに、ピロメリト酸二無水物0.31モル、1−フェニル−1,2−エタンジオール0.031モル、及び2−ブロモ−2−ニトロ−1,3−プロパンジオール0.086モルを加えた。この混合物を窒素雰囲気下に80℃に加熱した。この温度で反応を23時間維持した。次いで、ベンジルトリエチルアンモニウムクロライド4.0gを加え、そして温度を110℃に高めた。この温度で反応を7時間維持した。室温に冷却した後、この反応溶液を、攪拌しながら多量の水中にゆっくりと注ぎ入れた。析出したポリマーを集め、水で十分に洗浄し、最後に減圧炉中で乾燥した。
エチレンカーボネート500gを、機械的攪拌機を備えた1Lフラスコ中で液状になるまで加温した。これに、ピロメリト酸二無水物0.44モル及び2−ブロモ−2−ニトロ−1,3−プロパンジオール0.44モルを加えた。この混合物を窒素雰囲気下に80℃に加熱した。この温度で反応を7時間維持した。次いで、ベンジルトリエチルアンモニウムクロライド5gを加え、そして温度を110℃に高めた。反応をこの温度で16時間、そして120℃で更に5時間維持した。室温に冷却した後、この反応溶液を、攪拌しながら多量の水中にゆっくりと注ぎ入れた。析出したポリマーを集め、水で十分に洗浄し、そして最後に減圧炉中で乾燥した。全収量は約50%であった。得られたポリマーは、約6500の重量平均分子量及び3.1の多分散性を有していた。
エチレンカーボネート400gを、機械的攪拌機を備えた1Lフラスコ中に液状になるまで加温した。これに、ピロメリト酸二無水物0.50モル、2−メチル−2−ニトロ−1,3−プロパンジオール0.50モルを加えた。窒素雰囲気下に、この混合物を80℃に加熱した。この温度で反応を23時間維持した。ベンジルトリエチルアンモニウムクロライド5.0gを加えた後、温度を130℃に高めそして4時間維持した。室温に冷却した後、この反応溶液を、攪拌しながら多量の水中にゆっくりと注ぎ入れた。析出したポリマーを集め、水で十分に洗浄し、最後に減圧炉中で乾燥した。
エチレンカーボネート450gを、機械的攪拌機を備えた1Lフラスコ中で液状になるまで加温した。これに、ピロメリト酸二無水物0.72モル、2−メチル−2−ニトロ−1,3−プロパンジオール0.61モル、1−フェニル−1,2−エタンジオール0.11モル、及びベンジルトリエチルアンモニウムクロライド8gを加えた。窒素雰囲気下に、この混合物を80℃に加熱した。この温度で反応を8時間維持した。室温まで冷却した後、この反応溶液を、攪拌しながら多量の水中にゆっくりと注ぎ入れた。析出したポリマーを集め、水で十分に洗浄し、最後に減圧炉中で乾燥した。ポリマーをアセトン/水からもう一度再析出させた。全収量は約50%であった。得られたポリマーは、7000の重量平均分子量及び2.7の多分散性を有していた。
3,3’,4,4’−ベンゾフェノン−テトラカルボン酸二無水物0.2モル及び3.6−ジチア−1,8−オクタネンジオール0.2モルを、冷却器及び機械的攪拌機を装備した1Lフラスコ中でアセトニトリル250g中に懸濁させた。窒素雰囲気下に、この混合物を穏やかな還流下に加熱した。反応を24時間維持した。反応中にポリマーが析出した。反応混合物を室温まで冷却した後、ポリマーを吸引して集めた。このポリマーをアセトン300ml中に再溶解し、そして水から再析出させた。ポリマーを集めそして水で十分に洗浄した。最後に、ポリマーを減圧炉中で乾燥した。ポリマーの全収量は約65%であった。得られたポリマーは約5830の重量平均分子量及び2.2の多分散性を有していた。
Claims (17)
- ポリマー、架橋剤、及び酸または/及び酸発生剤を含む、フォトレジスト層用の反射防止膜組成物であって、前記ポリマーが、以下の構造1、2及び3から選択される少なくとも一種の単位を含む、前記反射防止膜組成物。
- ヒドロカルビルが、置換されたもしくは置換されていない脂肪族(C1〜C10)アルキレン基、置換されたもしくは置換されていないチアアルキレン脂肪族(C1〜C10)基、置換されたもしくは置換されていないシクロアルキレン、置換されたもしくは置換されていないベンジル、アルコキシアルキレン、アルコキシアリール、置換されたアリール、ヘテロシクロアルキレン、ヘテロアリール、オキソシクロヘキシル、環状ラクトン、ベンジル、置換されたベンジル、ヒドロキシアルキル、ヒドロキシアルコキシル、アルコキシアルキル、アルコキシアリール、アルキルアリール、アルケニル、置換されたアリール、ヘテロシクロアルキル、ヘテロアリール、ニトロアルキル、ハロアルキル、アルキルイミド、アルキルアミド、及びこれらの混合物から選択される、請求項1の組成物。
- Yが、メチレン、エチレン、プロピレン、ブチレン、フェニルエチレン、アルキルニトロアルキレン、ジチアオクチレン、ブロモニトロアルキレン、フェニル、ナフチル、フェニルの誘導体、及びナフチルの誘導体から選択される、請求項1の組成物。
- Yが、1−フェニル−1,2−エチレン、2−ブロモ−2−ニトロ−1,3−プロピレン、2−メチル−2−ニトロ−1,3−プロピレン、3,6−ジチア−1,8−オクチレン、-CH2OCH2、-CH2CH2OCH2CH2-、-CH2CH2SCH2CH2-、-CH2CH2SCH2CH2SCH2CH2-から選択される、請求項3の組成物。
- ポリマーが、次の構造4、5、6及び7から選択される少なくとも一種の単位を含む、請求項1の組成物。
- 架橋剤が、メラミン類、メチロール類、グリコールウリル類、ヒドロキシアルキルアミド類、エポキシ及びエポキシアミン樹脂、ブロックドイソシアネート類、及びジビニル系モノマーから選択される、請求項1の組成物。
- 酸発生剤が熱酸発生剤である、請求項1の組成物。
- 熱酸発生剤が、ニトロベンジルトシレート類、ニトロベンジルベンゼンスルホネート類及びフェノール系スルホネート類から選択される、請求項6の組成物。
- ポリマーが、部分的に架橋されたポリマーである、請求項1の組成物。
- ポリマーが、少なくとも一種のジオールと少なくとも一種の酸二無水物との反応生成物である、請求項1の組成物。
- 組成物が、ポリヒドロキシスチレン、ノボラック、ポリアリーレート及びポリメチルメタクリレートから選択される他のポリマーを更に含む、請求項1の組成物。
- 酸がスルホン酸類である、請求項1の組成物。
- 請求項1の反射防止膜組成物の層を有し、かつこの層の上に、ポリマー及び光活性化合物を含むフォトレジストの塗膜を有する基材を含む物品。
- a) 基材を請求項1の反射防止膜組成物でコーティング及びベーク処理し、
b) 前記反射防止膜の上にフォトレジスト膜をコーティング及びベーク処理し、
c) フォトレジストを像様露光し、
d) フォトレジストに像を現像し、
e) 場合によっては、露光段階の後に基材をベーク処理する、
ことを含む、像の形成方法。 - フォトレジストを、130nm〜250nmの波長で像様露光する、請求項14の方法。
- フォトレジストが、ポリマー及び光活性化合物を含む、請求項14の方法。
- 反射防止膜を、90℃を超える温度でベーク処理する、請求項14の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/301,462 US7264913B2 (en) | 2002-11-21 | 2002-11-21 | Antireflective compositions for photoresists |
PCT/EP2003/012383 WO2004046828A1 (en) | 2002-11-21 | 2003-11-06 | Antireflective compositions for photoresists |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006507521A true JP2006507521A (ja) | 2006-03-02 |
JP4465528B2 JP4465528B2 (ja) | 2010-05-19 |
Family
ID=32324544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004552529A Expired - Lifetime JP4465528B2 (ja) | 2002-11-21 | 2003-11-06 | フォトレジスト用の反射防止膜組成物 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7264913B2 (ja) |
EP (1) | EP1563343B1 (ja) |
JP (1) | JP4465528B2 (ja) |
KR (1) | KR101017339B1 (ja) |
CN (1) | CN100565342C (ja) |
MY (1) | MY162613A (ja) |
TW (1) | TWI301930B (ja) |
WO (1) | WO2004046828A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009104685A1 (ja) | 2008-02-21 | 2009-08-27 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
JP2010500607A (ja) * | 2006-08-10 | 2010-01-07 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | フォトレジスト用反射防止膜組成物 |
JP2010055049A (ja) * | 2008-08-26 | 2010-03-11 | Korea Kumho Petrochem Co Ltd | 開環した無水フタル酸を含む有機反射防止膜組成物およびその製造方法 |
JP2010527042A (ja) * | 2007-05-14 | 2010-08-05 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | 反射防止コーティング組成物 |
JP2010532003A (ja) * | 2007-03-12 | 2010-09-30 | ブルーワー サイエンス アイ エヌ シー. | フォトリソグラフィー工程において使用する材料のためのアミン拘束添加物 |
JP2014524942A (ja) * | 2011-06-06 | 2014-09-25 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | 底面反射防止コーティング組成物及びそれの方法 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10224217A1 (de) * | 2002-05-31 | 2003-12-18 | Infineon Technologies Ag | Photosensitiver Lack zur Beschichtung auf einem Halbleitersubstrat oder einer Maske |
KR100636663B1 (ko) * | 2002-06-24 | 2006-10-23 | 주식회사 하이닉스반도체 | 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법 |
US7264913B2 (en) | 2002-11-21 | 2007-09-04 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
US7081511B2 (en) | 2004-04-05 | 2006-07-25 | Az Electronic Materials Usa Corp. | Process for making polyesters |
US20060177772A1 (en) * | 2005-02-10 | 2006-08-10 | Abdallah David J | Process of imaging a photoresist with multiple antireflective coatings |
US20070231736A1 (en) * | 2006-03-28 | 2007-10-04 | Chen Kuang-Jung J | Bottom antireflective coating composition and method for use thereof |
US7824844B2 (en) * | 2007-01-19 | 2010-11-02 | Az Electronic Materials Usa Corp. | Solvent mixtures for antireflective coating compositions for photoresists |
US20080187868A1 (en) * | 2007-02-07 | 2008-08-07 | Munirathna Padmanaban | Photoactive Compounds |
US8026040B2 (en) | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
US8524441B2 (en) | 2007-02-27 | 2013-09-03 | Az Electronic Materials Usa Corp. | Silicon-based antireflective coating compositions |
US20090035704A1 (en) * | 2007-08-03 | 2009-02-05 | Hong Zhuang | Underlayer Coating Composition Based on a Crosslinkable Polymer |
US8039201B2 (en) * | 2007-11-21 | 2011-10-18 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8221965B2 (en) * | 2008-07-08 | 2012-07-17 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
KR101711424B1 (ko) * | 2009-01-16 | 2017-03-02 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 반도체 기판 코팅을 위한 비중합체성 결합제 |
US20100291475A1 (en) * | 2009-05-12 | 2010-11-18 | Chenghong Li | Silicone Coating Compositions |
US8551686B2 (en) * | 2009-10-30 | 2013-10-08 | Az Electronic Materials Usa Corp. | Antireflective composition for photoresists |
US8486609B2 (en) * | 2009-12-23 | 2013-07-16 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8445181B2 (en) * | 2010-06-03 | 2013-05-21 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8465902B2 (en) | 2011-02-08 | 2013-06-18 | Az Electronic Materials Usa Corp. | Underlayer coating composition and processes thereof |
US9170494B2 (en) | 2012-06-19 | 2015-10-27 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective compositions and methods of using same |
WO2018167112A1 (en) * | 2017-03-16 | 2018-09-20 | Merck Patent Gmbh | Lithographic compositions and methods of use thereof |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2585323A (en) | 1949-05-31 | 1952-02-12 | California Research Corp | Linear pyromellitic polyesters and their derivatives |
NL245996A (ja) | 1958-12-02 | |||
US3483169A (en) | 1967-08-21 | 1969-12-09 | Case Leslie C | Polyester-polyethers and process of preparing the same |
US3497472A (en) | 1967-12-05 | 1970-02-24 | Sun Oil Co | Polyesters of adamantanediols and aromatic tetracarboxylic acid dianhydrides |
US3919172A (en) | 1972-10-30 | 1975-11-11 | California Inst Of Techn | Method of preparing polyesters from polymeric polyols and dianhydrides |
US3856752A (en) | 1973-10-01 | 1974-12-24 | Ciba Geigy Corp | Soluble polyimides derived from phenylindane diamines and dianhydrides |
US4196129A (en) | 1977-01-21 | 1980-04-01 | California Institute Of Technology | Prepolymer dianhydrides |
GB2036772B (en) * | 1978-11-06 | 1983-05-05 | Bostik Ltd | Acrylic adhesives |
JPS598770A (ja) | 1982-07-07 | 1984-01-18 | Toyobo Co Ltd | 塗装鋼板用塗料組成物 |
US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
JPS5988770A (ja) | 1982-11-13 | 1984-05-22 | Canon Inc | 電子写真複写装置 |
US4912160A (en) | 1987-11-16 | 1990-03-27 | The Sherwin-Williams Company | Acid-functional polymers from hydroxy polymers and cyclic anhydrides |
DE3817012A1 (de) | 1988-05-19 | 1989-11-30 | Basf Ag | Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern |
EP0440374B1 (en) | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
JP3000745B2 (ja) | 1991-09-19 | 2000-01-17 | 富士通株式会社 | レジスト組成物とレジストパターンの形成方法 |
FR2694012B1 (fr) | 1992-07-23 | 1994-08-26 | Kermel Snc | Solutions de polyimide et leur procédé d'obtention. |
US5294680A (en) | 1992-07-24 | 1994-03-15 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
DE4224761A1 (de) | 1992-07-27 | 1994-02-03 | Basf Ag | Verwendung von Polykondensaten und neue Polykondensate |
CA2160908C (en) | 1993-04-21 | 2005-02-01 | Frank W. Harris | Negative birefringent polyimide films |
US5395918A (en) | 1994-04-21 | 1995-03-07 | The University Of Akron | Organo-soluble polyimides from substituted dianhydrides |
JP3804138B2 (ja) | 1996-02-09 | 2006-08-02 | Jsr株式会社 | ArFエキシマレーザー照射用感放射線性樹脂組成物 |
US6136499A (en) | 1996-03-07 | 2000-10-24 | The B. F. Goodrich Company | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
KR100265597B1 (ko) | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
US5939236A (en) | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
US5935760A (en) | 1997-10-20 | 1999-08-10 | Brewer Science Inc. | Thermosetting polyester anti-reflective coatings for multilayer photoresist processes |
WO1999042508A1 (en) | 1998-02-23 | 1999-08-26 | Stepan Company | Low viscosity polyester polyols and methods for preparing same |
US5962621A (en) | 1998-04-28 | 1999-10-05 | The Dow Chemical Company | Process for preparing hydroxy-functionalized polyesters |
WO2000017712A1 (en) | 1998-09-23 | 2000-03-30 | E.I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
US6114085A (en) * | 1998-11-18 | 2000-09-05 | Clariant Finance (Bvi) Limited | Antireflective composition for a deep ultraviolet photoresist |
DE60044493D1 (de) | 1999-05-04 | 2010-07-15 | Du Pont | Fluorierte photoresists und verfahren für die mikrolithographie |
US7264913B2 (en) | 2002-11-21 | 2007-09-04 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
US7081511B2 (en) | 2004-04-05 | 2006-07-25 | Az Electronic Materials Usa Corp. | Process for making polyesters |
-
2002
- 2002-11-21 US US10/301,462 patent/US7264913B2/en not_active Expired - Lifetime
-
2003
- 2003-11-06 CN CNB2003801037766A patent/CN100565342C/zh not_active Expired - Lifetime
- 2003-11-06 EP EP03775309A patent/EP1563343B1/en not_active Expired - Lifetime
- 2003-11-06 JP JP2004552529A patent/JP4465528B2/ja not_active Expired - Lifetime
- 2003-11-06 WO PCT/EP2003/012383 patent/WO2004046828A1/en active Application Filing
- 2003-11-06 KR KR1020057008759A patent/KR101017339B1/ko active IP Right Grant
- 2003-11-07 TW TW092131265A patent/TWI301930B/zh active
- 2003-11-19 MY MYPI20034424A patent/MY162613A/en unknown
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010500607A (ja) * | 2006-08-10 | 2010-01-07 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | フォトレジスト用反射防止膜組成物 |
JP2010532003A (ja) * | 2007-03-12 | 2010-09-30 | ブルーワー サイエンス アイ エヌ シー. | フォトリソグラフィー工程において使用する材料のためのアミン拘束添加物 |
JP2010527042A (ja) * | 2007-05-14 | 2010-08-05 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | 反射防止コーティング組成物 |
WO2009104685A1 (ja) | 2008-02-21 | 2009-08-27 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
JPWO2009104685A1 (ja) * | 2008-02-21 | 2011-06-23 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
US8435721B2 (en) | 2008-02-21 | 2013-05-07 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition and forming method of resist pattern using the same |
JP5267819B2 (ja) * | 2008-02-21 | 2013-08-21 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
JP2010055049A (ja) * | 2008-08-26 | 2010-03-11 | Korea Kumho Petrochem Co Ltd | 開環した無水フタル酸を含む有機反射防止膜組成物およびその製造方法 |
JP2014524942A (ja) * | 2011-06-06 | 2014-09-25 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | 底面反射防止コーティング組成物及びそれの方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20050074624A (ko) | 2005-07-18 |
EP1563343A1 (en) | 2005-08-17 |
CN1714316A (zh) | 2005-12-28 |
KR101017339B1 (ko) | 2011-02-28 |
JP4465528B2 (ja) | 2010-05-19 |
EP1563343B1 (en) | 2012-01-11 |
WO2004046828A1 (en) | 2004-06-03 |
US20040101779A1 (en) | 2004-05-27 |
TWI301930B (en) | 2008-10-11 |
CN100565342C (zh) | 2009-12-02 |
MY162613A (en) | 2017-06-30 |
US7264913B2 (en) | 2007-09-04 |
TW200413855A (en) | 2004-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4465528B2 (ja) | フォトレジスト用の反射防止膜組成物 | |
JP5765854B2 (ja) | 反射防止コーティング組成物 | |
JP5568791B2 (ja) | 反射防止コーティング組成物 | |
TWI438575B (zh) | 以可交聯聚合物為主之底層塗覆組合物 | |
TWI417668B (zh) | 用於光阻之抗反射組合物 | |
JP5320624B2 (ja) | フォトレジスト用の反射防止膜組成物 | |
JP3231794B2 (ja) | フォトレジスト組成物用の反射防止膜用組成物及びそれの使用法 | |
KR101824763B1 (ko) | 하층 조성물 및 이의 방법 | |
JP5375096B2 (ja) | 反射防止膜 | |
JP6109750B2 (ja) | 下層コーティング組成物および微細電子デバイスを製造するための方法 | |
US20060063105A1 (en) | Negative-working photoimageable bottom antireflective coating | |
JP2012505434A (ja) | 底面反射防止コーティング組成物 | |
JP2010527042A (ja) | 反射防止コーティング組成物 | |
JP2013519926A (ja) | 反射防止組成物及びそれを用いた方法 | |
TWI491995B (zh) | 用於光阻之抗反射組合物 | |
TWI408185B (zh) | 抗反射塗料組合物 | |
US20060057501A1 (en) | Antireflective compositions for photoresists |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061019 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090707 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20091002 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20091009 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20091106 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20091113 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091204 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100202 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100205 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100205 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4465528 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130305 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130305 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130305 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130305 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140305 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |