JP2006501670A5 - - Google Patents

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Publication number
JP2006501670A5
JP2006501670A5 JP2004541496A JP2004541496A JP2006501670A5 JP 2006501670 A5 JP2006501670 A5 JP 2006501670A5 JP 2004541496 A JP2004541496 A JP 2004541496A JP 2004541496 A JP2004541496 A JP 2004541496A JP 2006501670 A5 JP2006501670 A5 JP 2006501670A5
Authority
JP
Japan
Prior art keywords
layer
region
depositing
activated
flexible substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004541496A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006501670A (ja
Filing date
Publication date
Priority claimed from US10/261,052 external-priority patent/US6709944B1/en
Application filed filed Critical
Publication of JP2006501670A publication Critical patent/JP2006501670A/ja
Publication of JP2006501670A5 publication Critical patent/JP2006501670A5/ja
Pending legal-status Critical Current

Links

JP2004541496A 2002-09-30 2003-08-28 可撓性基材上に抵抗器を製造する技術 Pending JP2006501670A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/261,052 US6709944B1 (en) 2002-09-30 2002-09-30 Techniques for fabricating a resistor on a flexible base material
PCT/US2003/027112 WO2004032154A1 (en) 2002-09-30 2003-08-28 Techniques for fabricating a resistor on a flexible base material

Publications (2)

Publication Number Publication Date
JP2006501670A JP2006501670A (ja) 2006-01-12
JP2006501670A5 true JP2006501670A5 (cg-RX-API-DMAC7.html) 2006-10-05

Family

ID=31977937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004541496A Pending JP2006501670A (ja) 2002-09-30 2003-08-28 可撓性基材上に抵抗器を製造する技術

Country Status (7)

Country Link
US (2) US6709944B1 (cg-RX-API-DMAC7.html)
EP (1) EP1550140A1 (cg-RX-API-DMAC7.html)
JP (1) JP2006501670A (cg-RX-API-DMAC7.html)
KR (1) KR20050065565A (cg-RX-API-DMAC7.html)
CN (1) CN100477021C (cg-RX-API-DMAC7.html)
AU (1) AU2003268263A1 (cg-RX-API-DMAC7.html)
WO (1) WO2004032154A1 (cg-RX-API-DMAC7.html)

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US20100044079A1 (en) * 1999-08-27 2010-02-25 Lex Kosowsky Metal Deposition
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US20100038121A1 (en) * 1999-08-27 2010-02-18 Lex Kosowsky Metal Deposition
US20100038119A1 (en) * 1999-08-27 2010-02-18 Lex Kosowsky Metal Deposition
US20100044080A1 (en) * 1999-08-27 2010-02-25 Lex Kosowsky Metal Deposition
KR100674824B1 (ko) 2004-12-08 2007-01-25 삼성전기주식회사 자기저항소자 제조방법
EP1750309A3 (en) * 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
US20100263200A1 (en) * 2005-11-22 2010-10-21 Lex Kosowsky Wireless communication device using voltage switchable dielectric material
US7923844B2 (en) * 2005-11-22 2011-04-12 Shocking Technologies, Inc. Semiconductor devices including voltage switchable materials for over-voltage protection
US8222116B2 (en) 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20080029405A1 (en) * 2006-07-29 2008-02-07 Lex Kosowsky Voltage switchable dielectric material having conductive or semi-conductive organic material
US7968014B2 (en) * 2006-07-29 2011-06-28 Shocking Technologies, Inc. Device applications for voltage switchable dielectric material having high aspect ratio particles
US20080032049A1 (en) * 2006-07-29 2008-02-07 Lex Kosowsky Voltage switchable dielectric material having high aspect ratio particles
US7872251B2 (en) * 2006-09-24 2011-01-18 Shocking Technologies, Inc. Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same
US20120119168A9 (en) * 2006-11-21 2012-05-17 Robert Fleming Voltage switchable dielectric materials with low band gap polymer binder or composite
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US7793236B2 (en) * 2007-06-13 2010-09-07 Shocking Technologies, Inc. System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices
US20100006884A1 (en) * 2007-08-07 2010-01-14 Epistar Corporation Light Emitting Device and Manufacturing Method Therof
US8206614B2 (en) 2008-01-18 2012-06-26 Shocking Technologies, Inc. Voltage switchable dielectric material having bonded particle constituents
US8203421B2 (en) * 2008-04-14 2012-06-19 Shocking Technologies, Inc. Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
US7727808B2 (en) * 2008-06-13 2010-06-01 General Electric Company Ultra thin die electronic package
US20100047535A1 (en) * 2008-08-22 2010-02-25 Lex Kosowsky Core layer structure having voltage switchable dielectric material
WO2010033635A1 (en) * 2008-09-17 2010-03-25 Shocking Technologies, Inc. Voltage switchable dielectric material containing boron compound
US9208931B2 (en) 2008-09-30 2015-12-08 Littelfuse, Inc. Voltage switchable dielectric material containing conductor-on-conductor core shelled particles
CN102246246A (zh) * 2008-09-30 2011-11-16 肖克科技有限公司 含有导电芯壳粒子的电压可切换电介质材料
US8362871B2 (en) * 2008-11-05 2013-01-29 Shocking Technologies, Inc. Geometric and electric field considerations for including transient protective material in substrate devices
US9226391B2 (en) 2009-01-27 2015-12-29 Littelfuse, Inc. Substrates having voltage switchable dielectric materials
US8272123B2 (en) 2009-01-27 2012-09-25 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US8399773B2 (en) 2009-01-27 2013-03-19 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
EP2412212A1 (en) 2009-03-26 2012-02-01 Shocking Technologies Inc Components having voltage switchable dielectric materials
US9053844B2 (en) * 2009-09-09 2015-06-09 Littelfuse, Inc. Geometric configuration or alignment of protective material in a gap structure for electrical devices
KR101065409B1 (ko) * 2009-11-04 2011-09-16 삼성모바일디스플레이주식회사 유기 발광 조명 장치
US20110198544A1 (en) * 2010-02-18 2011-08-18 Lex Kosowsky EMI Voltage Switchable Dielectric Materials Having Nanophase Materials
US9082622B2 (en) 2010-02-26 2015-07-14 Littelfuse, Inc. Circuit elements comprising ferroic materials
US9320135B2 (en) * 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components
US9224728B2 (en) * 2010-02-26 2015-12-29 Littelfuse, Inc. Embedded protection against spurious electrical events
CN102324289B (zh) * 2011-05-31 2014-05-14 四平市吉华高新技术有限公司 厚膜电阻板及其制造方法
TWI497535B (zh) 2011-07-28 2015-08-21 Cyntec Co Ltd 具有軟性材料層之微電阻元件及其製造方法
CN102903467B (zh) * 2011-07-29 2016-04-06 乾坤科技股份有限公司 具有软性材料层的微电阻元件及其制造方法
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CN111780653B (zh) * 2020-06-09 2022-01-07 中国电子科技集团公司第四十九研究所 基于碳膜纳米导电材料的电阻体及其制备方法
CN116941125A (zh) * 2021-02-26 2023-10-24 京瓷Avx元器件公司 高频率和高功率的薄膜组件
CN113410382B (zh) * 2021-06-15 2022-11-29 西安微电子技术研究所 一种铬硅系薄膜电阻及其制备方法
CN114256063A (zh) * 2021-12-16 2022-03-29 上海华虹宏力半导体制造有限公司 一种图形轮廓质量提高方法
USD1046802S1 (en) * 2022-08-09 2024-10-15 Richardson Electronics, Ltd. Resistor
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