JP2006501669A5 - - Google Patents
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- Publication number
- JP2006501669A5 JP2006501669A5 JP2004541118A JP2004541118A JP2006501669A5 JP 2006501669 A5 JP2006501669 A5 JP 2006501669A5 JP 2004541118 A JP2004541118 A JP 2004541118A JP 2004541118 A JP2004541118 A JP 2004541118A JP 2006501669 A5 JP2006501669 A5 JP 2006501669A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0212120A FR2845202B1 (fr) | 2002-10-01 | 2002-10-01 | Procede de recuit rapide de tranches de materiau semiconducteur. |
| PCT/IB2003/004590 WO2004032227A1 (en) | 2002-10-01 | 2003-09-26 | Rapid annealing process for wafers in semiconductor material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006501669A JP2006501669A (ja) | 2006-01-12 |
| JP2006501669A5 true JP2006501669A5 (ja) | 2006-04-27 |
Family
ID=31985363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004541118A Pending JP2006501669A (ja) | 2002-10-01 | 2003-09-26 | 半導体材料のウエハのための高速アニーリングプロセス |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7138344B2 (ja) |
| EP (1) | EP1552553A1 (ja) |
| JP (1) | JP2006501669A (ja) |
| KR (1) | KR100758053B1 (ja) |
| CN (1) | CN100336196C (ja) |
| AU (1) | AU2003267793A1 (ja) |
| FR (1) | FR2845202B1 (ja) |
| TW (1) | TWI278936B (ja) |
| WO (1) | WO2004032227A1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008053521A (ja) * | 2006-08-25 | 2008-03-06 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコンウェーハの熱処理方法 |
| KR100818842B1 (ko) * | 2006-12-27 | 2008-04-01 | 주식회사 실트론 | 웨이퍼의 열처리시 슬립을 방지할 수 있는 웨이퍼 지지 핀및 웨이퍼의 열처리 방법 |
| FR2938119B1 (fr) | 2008-10-30 | 2011-04-22 | Soitec Silicon On Insulator | Procede de detachement de couches semi-conductrices a basse temperature |
| FR2941324B1 (fr) * | 2009-01-22 | 2011-04-29 | Soitec Silicon On Insulator | Procede de dissolution de la couche d'oxyde dans la couronne d'une structure de type semi-conducteur sur isolant. |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3373390D1 (en) * | 1983-03-18 | 1987-10-08 | Acec | Method of controlling the running of an electrical machine, and device using this method |
| US5359693A (en) * | 1991-07-15 | 1994-10-25 | Ast Elektronik Gmbh | Method and apparatus for a rapid thermal processing of delicate components |
| JPH07321120A (ja) * | 1994-05-25 | 1995-12-08 | Komatsu Electron Metals Co Ltd | シリコンウェーハの熱処理方法 |
| JP3287524B2 (ja) * | 1995-03-13 | 2002-06-04 | 三菱マテリアル株式会社 | Ｓｏｉ基板の製造方法 |
| JPH1012626A (ja) * | 1996-06-26 | 1998-01-16 | Sony Corp | 半導体装置の製造方法 |
| JP3450163B2 (ja) * | 1997-09-12 | 2003-09-22 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JPH11168106A (ja) * | 1997-09-30 | 1999-06-22 | Fujitsu Ltd | 半導体基板の処理方法 |
| FR2777115B1 (fr) * | 1998-04-07 | 2001-07-13 | Commissariat Energie Atomique | Procede de traitement de substrats semi-conducteurs et structures obtenues par ce procede |
| JP3478141B2 (ja) * | 1998-09-14 | 2003-12-15 | 信越半導体株式会社 | シリコンウエーハの熱処理方法及びシリコンウエーハ |
| FR2797713B1 (fr) * | 1999-08-20 | 2002-08-02 | Soitec Silicon On Insulator | Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede |
| JP2002110688A (ja) * | 2000-09-29 | 2002-04-12 | Canon Inc | Ｓｏｉの熱処理方法及び製造方法 |
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2002
- 2002-10-01 FR FR0212120A patent/FR2845202B1/fr not_active Expired - Fee Related
-
2003
- 2003-09-25 US US10/671,813 patent/US7138344B2/en not_active Expired - Fee Related
- 2003-09-26 AU AU2003267793A patent/AU2003267793A1/en not_active Abandoned
- 2003-09-26 WO PCT/IB2003/004590 patent/WO2004032227A1/en active Application Filing
- 2003-09-26 KR KR1020057005735A patent/KR100758053B1/ko not_active IP Right Cessation
- 2003-09-26 CN CNB038235196A patent/CN100336196C/zh not_active Expired - Fee Related
- 2003-09-26 JP JP2004541118A patent/JP2006501669A/ja active Pending
- 2003-09-26 EP EP03748489A patent/EP1552553A1/en not_active Withdrawn
- 2003-09-30 TW TW092126922A patent/TWI278936B/zh not_active IP Right Cessation