JP2006501634A - 基板をエッチングするための方法及び装置 - Google Patents

基板をエッチングするための方法及び装置 Download PDF

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Publication number
JP2006501634A
JP2006501634A JP2003553608A JP2003553608A JP2006501634A JP 2006501634 A JP2006501634 A JP 2006501634A JP 2003553608 A JP2003553608 A JP 2003553608A JP 2003553608 A JP2003553608 A JP 2003553608A JP 2006501634 A JP2006501634 A JP 2006501634A
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Prior art keywords
layer
substrate
gas
mixture
etching
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Japanese (ja)
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JP2006501634A5 (enExample
Inventor
アジェイ エム ジョシ
ピュイ マン アグネス ング
ジェイムス エイ スティンネット
ウサマ ダデュ
ジェイソン レギス
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003553608A 2001-12-13 2002-12-12 基板をエッチングするための方法及び装置 Pending JP2006501634A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34113501P 2001-12-13 2001-12-13
PCT/US2002/039906 WO2003052808A2 (en) 2001-12-13 2002-12-12 Self-aligned contact etch with high sensitivity to nitride shoulder

Publications (2)

Publication Number Publication Date
JP2006501634A true JP2006501634A (ja) 2006-01-12
JP2006501634A5 JP2006501634A5 (enExample) 2006-02-23

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JP2003553608A Pending JP2006501634A (ja) 2001-12-13 2002-12-12 基板をエッチングするための方法及び装置

Country Status (7)

Country Link
US (1) US20060051968A1 (enExample)
JP (1) JP2006501634A (enExample)
KR (1) KR20040066170A (enExample)
CN (2) CN1605117B (enExample)
AU (1) AU2002353145A1 (enExample)
TW (2) TWI303851B (enExample)
WO (1) WO2003052808A2 (enExample)

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WO2003052808A3 (en) 2004-04-15
CN100524642C (zh) 2009-08-05
CN1605117A (zh) 2005-04-06
TWI301644B (en) 2008-10-01
AU2002353145A1 (en) 2003-06-30
WO2003052808A2 (en) 2003-06-26
CN1605117B (zh) 2010-05-12
US20060051968A1 (en) 2006-03-09
TW200305947A (en) 2003-11-01
KR20040066170A (ko) 2004-07-23

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