JP2006351774A - 熱処理装置、ヒータ及びヒータの製造方法 - Google Patents
熱処理装置、ヒータ及びヒータの製造方法 Download PDFInfo
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- JP2006351774A JP2006351774A JP2005175097A JP2005175097A JP2006351774A JP 2006351774 A JP2006351774 A JP 2006351774A JP 2005175097 A JP2005175097 A JP 2005175097A JP 2005175097 A JP2005175097 A JP 2005175097A JP 2006351774 A JP2006351774 A JP 2006351774A
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- Prior art keywords
- heater
- insulating material
- heat insulating
- heat
- cooling fluid
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
Abstract
【解決手段】 被処理体wを多段に収容して所定の熱処理を行うための処理容器3と、該処理容器3を覆い被処理体wを加熱する筒状のヒータ3と、該ヒータ3と処理容器2との間の空間19内の雰囲気を排出する排熱系20と、前記空間19内に冷却流体を吹出して冷却する冷却手段22とを備えた熱処理装置1であって、前記ヒータ3は筒状の断熱材13の内周に発熱抵抗体14を配設してなり、前記冷却手段22は前記ヒータ3の断熱材13中に埋設された複数の吹出しノズル23を有し、各吹出しノズル23はその入口23aと出口23bが直線でつながらない形状に形成されている。
【選択図】 図1
Description
w 半導体ウエハ(被処理体)
2 処理容器
3 ヒータ
13 断熱材
14 抵抗発熱体
15 外側断熱材
16 外皮
19 空間
20 排熱系
22 冷却手段
23 吹出しノズル
23a 入口
23b 出口
26 冷却流体導入部
27 通路
Claims (6)
- 被処理体を多段に収容して所定の熱処理を行うための処理容器と、該処理容器を覆い被処理体を加熱する筒状のヒータと、該ヒータと処理容器との間の空間内の雰囲気を排出する排熱系と、前記空間内に冷却流体を吹出して冷却する冷却手段とを備えた熱処理装置であって、前記ヒータは筒状の断熱材の内周に発熱抵抗体を配設してなり、前記冷却手段は前記ヒータの断熱材中に埋設された複数の吹出しノズルを有し、各吹出しノズルはその入口と出口が直線でつながらない形状に形成されていることを特徴とする熱処理装置。
- 前記吹出しノズルは、側面略Z字状に形成され、下側が入口、上側が出口とされていることを特徴とする請求項1記載の熱処理装置。
- 前記吹出しノズルは、前記空間の周方向に沿って旋回する冷却流体の流れを形成するために平面視でヒータの中心方向に対して概ね45°傾斜していることを特徴とする請求項1記載の熱処理装置。
- 前記断熱材の外周は、外皮で覆われ、該外皮に前記吹出しノズルの入口と連通する冷却流体導入部を設けたことを特徴とする請求項1記載の熱処理装置。
- 筒状の断熱材と、該断熱材の内周に配設された発熱抵抗体とを備えたヒータであって、前記断熱材の内周に沿って旋回する冷却流体の流れを形成するために、断熱材中に、側面略Z字状の吹出しノズルを平面視でヒータの中心方向に対して概ね45°傾斜させた状態で複数埋設したことを特徴とするヒータ。
- 筒状の断熱材と、該断熱材の内周に配設された発熱抵抗体とを備えたヒータの製造方法であって、前記断熱材の内周に沿って旋回する冷却流体の流れを形成するために、断熱材中に、側面略Z字状の吹出しノズルを平面視でヒータの中心方向に対して概ね45°傾斜させた状態で複数埋設することを特徴とするヒータの製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005175097A JP4607678B2 (ja) | 2005-06-15 | 2005-06-15 | 熱処理装置、ヒータ及びヒータの製造方法 |
TW095120400A TWI392027B (zh) | 2005-06-15 | 2006-06-08 | Heat treatment apparatus, heater and heater manufacturing method |
US11/922,010 US8033823B2 (en) | 2005-06-15 | 2006-06-12 | Heat processing apparatus |
EP06766598A EP1895575B1 (en) | 2005-06-15 | 2006-06-12 | Heat treatment apparatus |
DE602006017692T DE602006017692D1 (de) | 2005-06-15 | 2006-06-12 | Wärmebehandlungsvorrichtung |
PCT/JP2006/311736 WO2006134862A1 (ja) | 2005-06-15 | 2006-06-12 | 熱処理装置 |
CN2006800190033A CN101288158B (zh) | 2005-06-15 | 2006-06-12 | 热处理装置 |
KR1020077026342A KR100934850B1 (ko) | 2005-06-15 | 2006-06-12 | 열처리 장치, 히터 및 히터의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005175097A JP4607678B2 (ja) | 2005-06-15 | 2005-06-15 | 熱処理装置、ヒータ及びヒータの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006351774A true JP2006351774A (ja) | 2006-12-28 |
JP4607678B2 JP4607678B2 (ja) | 2011-01-05 |
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ID=37532224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005175097A Active JP4607678B2 (ja) | 2005-06-15 | 2005-06-15 | 熱処理装置、ヒータ及びヒータの製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8033823B2 (ja) |
EP (1) | EP1895575B1 (ja) |
JP (1) | JP4607678B2 (ja) |
KR (1) | KR100934850B1 (ja) |
CN (1) | CN101288158B (ja) |
DE (1) | DE602006017692D1 (ja) |
TW (1) | TWI392027B (ja) |
WO (1) | WO2006134862A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102414578B1 (ko) * | 2022-03-28 | 2022-06-28 | 김현수 | 열선이 포함된 보온재 구조체 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4490492B2 (ja) * | 2007-06-25 | 2010-06-23 | 株式会社日立国際電気 | 加熱装置及びこれを用いた基板処理装置並びに半導体装置の製造方法並びに絶縁体 |
KR101012082B1 (ko) | 2007-06-25 | 2011-02-07 | 데이또꾸샤 가부시키가이샤 | 가열 장치 및 이것을 채용한 기판 처리 장치 및 반도체장치의 제조 방법 및 절연체 |
JP5645718B2 (ja) * | 2011-03-07 | 2014-12-24 | 東京エレクトロン株式会社 | 熱処理装置 |
KR102020446B1 (ko) | 2013-01-10 | 2019-09-10 | 삼성전자주식회사 | 에피텍시얼막 형성 방법 및 이를 수행하기 위한 장치 및 시스템 |
JP7055075B2 (ja) * | 2018-07-20 | 2022-04-15 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
RU2736465C1 (ru) * | 2019-04-05 | 2020-11-17 | Общество с ограниченной ответственностью ТОРГОВЫЙ ДОМ "ЭЛЕКТРОМАШ" (ООО ТД "ЭЛЕКТРОМАШ") | Печь для обжига и сушки |
RU2768810C1 (ru) * | 2020-11-02 | 2022-03-24 | Общество с ограниченной ответственностью ТОРГОВЫЙ ДОМ "ЭЛЕКТРОМАШ" (ООО ТД "ЭЛЕКТРОМАШ") | Установка обжиговая с камерой дожига |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS59143039U (ja) * | 1983-03-11 | 1984-09-25 | 富士通株式会社 | 加熱炉 |
JPS6448022U (ja) * | 1987-09-18 | 1989-03-24 | ||
JPH0294626A (ja) * | 1988-09-30 | 1990-04-05 | Tel Sagami Ltd | 縦型熱処理装置および熱処理方法 |
JPH11260744A (ja) * | 1998-03-09 | 1999-09-24 | Kokusai Electric Co Ltd | 熱処理炉 |
JP2003173980A (ja) * | 2001-09-26 | 2003-06-20 | Kyocera Corp | 熱触媒体内蔵カソード型pecvd装置、それを用いて作製した光電変換装置並びにその製造方法、および熱触媒体内蔵カソード型pecvd法、それを用いるcvd装置、その方法により形成した膜並びにその膜を用いて形成したデバイス |
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JPS59143039A (ja) | 1983-02-04 | 1984-08-16 | Nippon Light Metal Co Ltd | 押出用Al―Mg―Si系アルミニウム合金鋳塊の製造法 |
JPS6448022A (en) | 1987-08-18 | 1989-02-22 | Nippon Mining Co | Formation of electrode |
KR960012876B1 (ko) * | 1988-06-16 | 1996-09-25 | 도오교오 에레구토론 사가미 가부시끼가이샤 | 열처리 장치 |
US5507639A (en) * | 1993-06-30 | 1996-04-16 | Tokyo Electron Kabushiki Kaisha | Heat treatment apparatus and method thereof |
JP3151092B2 (ja) | 1993-06-30 | 2001-04-03 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
CN1177830A (zh) * | 1996-09-23 | 1998-04-01 | 三星电子株式会社 | 半导体晶片热处理设备 |
NL1005541C2 (nl) * | 1997-03-14 | 1998-09-18 | Advanced Semiconductor Mat | Werkwijze voor het koelen van een oven alsmede oven voorzien van een koelinrichting. |
US6407367B1 (en) * | 1997-12-26 | 2002-06-18 | Canon Kabushiki Kaisha | Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article |
JP4365017B2 (ja) * | 2000-08-23 | 2009-11-18 | 東京エレクトロン株式会社 | 熱処理装置の降温レート制御方法および熱処理装置 |
JP3910151B2 (ja) * | 2003-04-01 | 2007-04-25 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
-
2005
- 2005-06-15 JP JP2005175097A patent/JP4607678B2/ja active Active
-
2006
- 2006-06-08 TW TW095120400A patent/TWI392027B/zh active
- 2006-06-12 KR KR1020077026342A patent/KR100934850B1/ko active IP Right Grant
- 2006-06-12 WO PCT/JP2006/311736 patent/WO2006134862A1/ja active Application Filing
- 2006-06-12 EP EP06766598A patent/EP1895575B1/en not_active Expired - Fee Related
- 2006-06-12 CN CN2006800190033A patent/CN101288158B/zh active Active
- 2006-06-12 US US11/922,010 patent/US8033823B2/en active Active
- 2006-06-12 DE DE602006017692T patent/DE602006017692D1/de active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS59143039U (ja) * | 1983-03-11 | 1984-09-25 | 富士通株式会社 | 加熱炉 |
JPS6448022U (ja) * | 1987-09-18 | 1989-03-24 | ||
JPH0294626A (ja) * | 1988-09-30 | 1990-04-05 | Tel Sagami Ltd | 縦型熱処理装置および熱処理方法 |
JPH11260744A (ja) * | 1998-03-09 | 1999-09-24 | Kokusai Electric Co Ltd | 熱処理炉 |
JP2003173980A (ja) * | 2001-09-26 | 2003-06-20 | Kyocera Corp | 熱触媒体内蔵カソード型pecvd装置、それを用いて作製した光電変換装置並びにその製造方法、および熱触媒体内蔵カソード型pecvd法、それを用いるcvd装置、その方法により形成した膜並びにその膜を用いて形成したデバイス |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102414578B1 (ko) * | 2022-03-28 | 2022-06-28 | 김현수 | 열선이 포함된 보온재 구조체 |
Also Published As
Publication number | Publication date |
---|---|
CN101288158B (zh) | 2010-06-16 |
KR100934850B1 (ko) | 2009-12-31 |
KR20070120606A (ko) | 2007-12-24 |
TWI392027B (zh) | 2013-04-01 |
TW200735168A (en) | 2007-09-16 |
CN101288158A (zh) | 2008-10-15 |
US20090136888A1 (en) | 2009-05-28 |
EP1895575A4 (en) | 2009-10-21 |
DE602006017692D1 (de) | 2010-12-02 |
US8033823B2 (en) | 2011-10-11 |
JP4607678B2 (ja) | 2011-01-05 |
EP1895575B1 (en) | 2010-10-20 |
WO2006134862A1 (ja) | 2006-12-21 |
EP1895575A1 (en) | 2008-03-05 |
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