JP2006339594A - 半導体用研磨剤 - Google Patents
半導体用研磨剤 Download PDFInfo
- Publication number
- JP2006339594A JP2006339594A JP2005165768A JP2005165768A JP2006339594A JP 2006339594 A JP2006339594 A JP 2006339594A JP 2005165768 A JP2005165768 A JP 2005165768A JP 2005165768 A JP2005165768 A JP 2005165768A JP 2006339594 A JP2006339594 A JP 2006339594A
- Authority
- JP
- Japan
- Prior art keywords
- abrasive
- polishing
- semiconductor
- additive
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 239000003082 abrasive agent Substances 0.000 title abstract description 15
- 238000005498 polishing Methods 0.000 claims abstract description 170
- 239000006061 abrasive grain Substances 0.000 claims abstract description 59
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 44
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 44
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 6
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims abstract 2
- 239000000654 additive Substances 0.000 claims description 73
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 51
- 239000003795 chemical substances by application Substances 0.000 claims description 36
- 239000000377 silicon dioxide Substances 0.000 claims description 25
- 235000012239 silicon dioxide Nutrition 0.000 claims description 23
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 21
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 12
- 229920000620 organic polymer Polymers 0.000 claims description 12
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 10
- 229920000058 polyacrylate Polymers 0.000 claims description 10
- 239000001361 adipic acid Substances 0.000 claims description 6
- 235000011037 adipic acid Nutrition 0.000 claims description 6
- 239000003945 anionic surfactant Substances 0.000 claims description 6
- 150000001735 carboxylic acids Chemical class 0.000 claims description 5
- 239000001384 succinic acid Substances 0.000 claims description 5
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- 239000004584 polyacrylic acid Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 40
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract description 11
- 238000009826 distribution Methods 0.000 abstract description 4
- 230000000996 additive effect Effects 0.000 description 66
- 239000007788 liquid Substances 0.000 description 48
- 229910052581 Si3N4 Inorganic materials 0.000 description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 23
- 238000002156 mixing Methods 0.000 description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 18
- 239000006185 dispersion Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 16
- 239000002245 particle Substances 0.000 description 15
- 230000002776 aggregation Effects 0.000 description 13
- 125000002843 carboxylic acid group Chemical group 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 229910021529 ammonia Inorganic materials 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 8
- 238000005054 agglomeration Methods 0.000 description 7
- 239000002270 dispersing agent Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- 238000004220 aggregation Methods 0.000 description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- -1 cerium ions Chemical class 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000004062 sedimentation Methods 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002612 dispersion medium Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000011975 tartaric acid Substances 0.000 description 3
- 235000002906 tartaric acid Nutrition 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 150000001734 carboxylic acid salts Chemical class 0.000 description 2
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 229920001519 homopolymer Polymers 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- 238000001132 ultrasonic dispersion Methods 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- LIFHMKCDDVTICL-UHFFFAOYSA-N 6-(chloromethyl)phenanthridine Chemical compound C1=CC=C2C(CCl)=NC3=CC=CC=C3C2=C1 LIFHMKCDDVTICL-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- FVFJGQJXAWCHIE-UHFFFAOYSA-N [4-(bromomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CBr)C=C1 FVFJGQJXAWCHIE-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- WPKYZIPODULRBM-UHFFFAOYSA-N azane;prop-2-enoic acid Chemical compound N.OC(=O)C=C WPKYZIPODULRBM-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- UNJPQTDTZAKTFK-UHFFFAOYSA-K cerium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ce+3] UNJPQTDTZAKTFK-UHFFFAOYSA-K 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000006179 pH buffering agent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005165768A JP2006339594A (ja) | 2005-06-06 | 2005-06-06 | 半導体用研磨剤 |
| EP06732559A EP1890321A1 (en) | 2005-06-06 | 2006-05-12 | Semiconductor abrasive |
| CNA2006800195183A CN101189706A (zh) | 2005-06-06 | 2006-05-12 | 半导体用研磨剂 |
| KR1020077025527A KR20080012864A (ko) | 2005-06-06 | 2006-05-12 | 반도체용 연마제 |
| PCT/JP2006/309578 WO2006132055A1 (ja) | 2005-06-06 | 2006-05-12 | 半導体用研磨剤 |
| TW095118884A TW200712185A (en) | 2005-06-06 | 2006-05-26 | Abrasive agent for semiconductor |
| US11/951,540 US20080086950A1 (en) | 2005-06-06 | 2007-12-06 | Semiconductor polishing compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005165768A JP2006339594A (ja) | 2005-06-06 | 2005-06-06 | 半導体用研磨剤 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006339594A true JP2006339594A (ja) | 2006-12-14 |
| JP2006339594A5 JP2006339594A5 (no) | 2008-04-10 |
Family
ID=37498261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005165768A Withdrawn JP2006339594A (ja) | 2005-06-06 | 2005-06-06 | 半導体用研磨剤 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080086950A1 (no) |
| EP (1) | EP1890321A1 (no) |
| JP (1) | JP2006339594A (no) |
| KR (1) | KR20080012864A (no) |
| CN (1) | CN101189706A (no) |
| TW (1) | TW200712185A (no) |
| WO (1) | WO2006132055A1 (no) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009540575A (ja) * | 2006-06-07 | 2009-11-19 | キャボット マイクロエレクトロニクス コーポレイション | 窒化シリコン材料を研磨するための組成物および方法 |
| KR101075491B1 (ko) | 2009-01-16 | 2011-10-21 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| JP2012146974A (ja) * | 2010-12-24 | 2012-08-02 | Hitachi Chem Co Ltd | 研磨液及びこの研磨液を用いた基板の研磨方法 |
| JP2013540851A (ja) * | 2010-09-08 | 2013-11-07 | ビーエーエスエフ ソシエタス・ヨーロピア | 水性研磨剤組成物、並びに電気、機械及び光学デバイス用の基板材料を研磨する方法 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004010487A1 (ja) * | 2002-07-22 | 2004-01-29 | Seimi Chemical Co., Ltd. | 半導体用研磨剤、その製造方法及び研磨方法 |
| KR20090049067A (ko) * | 2006-09-11 | 2009-05-15 | 아사히 가라스 가부시키가이샤 | 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법 |
| WO2008032681A1 (fr) * | 2006-09-13 | 2008-03-20 | Asahi Glass Co., Ltd. | Agent de polissage pour dispositif à semi-conducteur en circuit intégré, procédé de polissage, et procédé de fabrication du dispositif à semi-conducteur en circuit intégré |
| DE102007062572A1 (de) * | 2007-12-22 | 2009-06-25 | Evonik Degussa Gmbh | Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion |
| US8551887B2 (en) | 2009-12-22 | 2013-10-08 | Air Products And Chemicals, Inc. | Method for chemical mechanical planarization of a copper-containing substrate |
| JP4784694B1 (ja) * | 2010-05-27 | 2011-10-05 | 横浜ゴム株式会社 | 液状凝固剤およびタイヤパンクシール材セット |
| JP6051632B2 (ja) * | 2011-07-20 | 2016-12-27 | 日立化成株式会社 | 研磨剤及び基板の研磨方法 |
| EP2914675A4 (en) * | 2012-11-02 | 2016-10-05 | L Livermore Nat Security Llc | METHOD FOR PREVENTING AGGLOMERATION OF LOADED COLLOIDS WITHOUT LOSS OF SURFACE ACTIVITY |
| CN104726028A (zh) * | 2013-12-18 | 2015-06-24 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其使用方法 |
| CN105778774A (zh) * | 2014-12-23 | 2016-07-20 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| KR102514041B1 (ko) * | 2015-12-09 | 2023-03-24 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
| JP6602720B2 (ja) * | 2016-04-04 | 2019-11-06 | グローバルウェーハズ・ジャパン株式会社 | 半導体基板の保護膜形成方法 |
| CN107369618B (zh) * | 2017-07-07 | 2020-02-21 | 上海华虹宏力半导体制造有限公司 | 晶圆的平坦化方法 |
| WO2019043890A1 (ja) * | 2017-08-31 | 2019-03-07 | 株式会社Sumco | 半導体ウェーハの製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| JP2002198331A (ja) * | 2000-12-26 | 2002-07-12 | Jsr Corp | 研磨方法 |
| ATE403936T1 (de) * | 2002-04-30 | 2008-08-15 | Hitachi Chemical Co Ltd | Polierfluid und polierverfahren |
| WO2004010487A1 (ja) * | 2002-07-22 | 2004-01-29 | Seimi Chemical Co., Ltd. | 半導体用研磨剤、その製造方法及び研磨方法 |
| JP2004123931A (ja) * | 2002-10-03 | 2004-04-22 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
| JP2004273547A (ja) * | 2003-03-05 | 2004-09-30 | Kao Corp | 研磨速度選択比向上剤 |
-
2005
- 2005-06-06 JP JP2005165768A patent/JP2006339594A/ja not_active Withdrawn
-
2006
- 2006-05-12 KR KR1020077025527A patent/KR20080012864A/ko not_active Application Discontinuation
- 2006-05-12 CN CNA2006800195183A patent/CN101189706A/zh active Pending
- 2006-05-12 EP EP06732559A patent/EP1890321A1/en not_active Withdrawn
- 2006-05-12 WO PCT/JP2006/309578 patent/WO2006132055A1/ja active Application Filing
- 2006-05-26 TW TW095118884A patent/TW200712185A/zh unknown
-
2007
- 2007-12-06 US US11/951,540 patent/US20080086950A1/en not_active Abandoned
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009540575A (ja) * | 2006-06-07 | 2009-11-19 | キャボット マイクロエレクトロニクス コーポレイション | 窒化シリコン材料を研磨するための組成物および方法 |
| KR101075491B1 (ko) | 2009-01-16 | 2011-10-21 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| US8314030B2 (en) | 2009-01-16 | 2012-11-20 | Hynix Semiconductor, Inc. | Method for fabricating semiconductor device |
| JP2013540851A (ja) * | 2010-09-08 | 2013-11-07 | ビーエーエスエフ ソシエタス・ヨーロピア | 水性研磨剤組成物、並びに電気、機械及び光学デバイス用の基板材料を研磨する方法 |
| JP2012146974A (ja) * | 2010-12-24 | 2012-08-02 | Hitachi Chem Co Ltd | 研磨液及びこの研磨液を用いた基板の研磨方法 |
| JP2016183346A (ja) * | 2010-12-24 | 2016-10-20 | 日立化成株式会社 | 研磨液及びこの研磨液を用いた基板の研磨方法 |
| US9564337B2 (en) | 2010-12-24 | 2017-02-07 | Hitachi Chemical Co., Ltd. | Polishing liquid and method for polishing substrate using the polishing liquid |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080012864A (ko) | 2008-02-12 |
| TW200712185A (en) | 2007-04-01 |
| US20080086950A1 (en) | 2008-04-17 |
| CN101189706A (zh) | 2008-05-28 |
| EP1890321A1 (en) | 2008-02-20 |
| WO2006132055A1 (ja) | 2006-12-14 |
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