JP2006332637A5 - - Google Patents

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Publication number
JP2006332637A5
JP2006332637A5 JP2006124772A JP2006124772A JP2006332637A5 JP 2006332637 A5 JP2006332637 A5 JP 2006332637A5 JP 2006124772 A JP2006124772 A JP 2006124772A JP 2006124772 A JP2006124772 A JP 2006124772A JP 2006332637 A5 JP2006332637 A5 JP 2006332637A5
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JP
Japan
Prior art keywords
laser beam
divided
laser
split
beams
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Application number
JP2006124772A
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English (en)
Japanese (ja)
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JP5089077B2 (ja
JP2006332637A (ja
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Priority to JP2006124772A priority Critical patent/JP5089077B2/ja
Priority claimed from JP2006124772A external-priority patent/JP5089077B2/ja
Publication of JP2006332637A publication Critical patent/JP2006332637A/ja
Publication of JP2006332637A5 publication Critical patent/JP2006332637A5/ja
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Publication of JP5089077B2 publication Critical patent/JP5089077B2/ja
Expired - Fee Related legal-status Critical Current
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JP2006124772A 2005-04-28 2006-04-28 半導体装置の作製方法 Expired - Fee Related JP5089077B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006124772A JP5089077B2 (ja) 2005-04-28 2006-04-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005133731 2005-04-28
JP2005133731 2005-04-28
JP2006124772A JP5089077B2 (ja) 2005-04-28 2006-04-28 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012104458A Division JP5894002B2 (ja) 2005-04-28 2012-05-01 レーザ照射装置

Publications (3)

Publication Number Publication Date
JP2006332637A JP2006332637A (ja) 2006-12-07
JP2006332637A5 true JP2006332637A5 (enExample) 2009-06-18
JP5089077B2 JP5089077B2 (ja) 2012-12-05

Family

ID=37553949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006124772A Expired - Fee Related JP5089077B2 (ja) 2005-04-28 2006-04-28 半導体装置の作製方法

Country Status (1)

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JP (1) JP5089077B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100864883B1 (ko) * 2006-12-28 2008-10-22 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치.
JP4908269B2 (ja) * 2007-03-07 2012-04-04 富士フイルム株式会社 レーザ光照方法および装置
EP2504059A4 (en) * 2009-11-24 2014-01-22 Univ Columbia SYSTEMS AND METHOD FOR SEQUENTIAL SIDE FIXING WITH NONPERIODIC IMPULSES
JP5454911B2 (ja) * 2010-03-25 2014-03-26 株式会社日本製鋼所 アニール処理体の製造方法およびレーザアニール装置
JPWO2014136614A1 (ja) * 2013-03-05 2017-02-09 国立大学法人名古屋大学 半導体薄膜の形成方法
CN104143533B (zh) * 2014-08-07 2017-06-27 深圳市华星光电技术有限公司 高解析度amoled背板制造方法
DE102019118676B4 (de) * 2019-07-10 2021-10-21 Innovavent Gmbh Optisches System zur Homogenisierung der Intensität von Lichtstrahlung und Anlage zur Bearbeitung einer Halbleitermaterialschicht

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270510A (ja) * 2000-12-26 2002-09-20 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003109912A (ja) * 2001-10-01 2003-04-11 Matsushita Electric Ind Co Ltd レーザアニール装置
JP3563065B2 (ja) * 2002-03-28 2004-09-08 三菱電機株式会社 レーザビーム均一照射光学系
JP4503344B2 (ja) * 2003-04-21 2010-07-14 株式会社半導体エネルギー研究所 ビーム照射装置および半導体装置の作製方法

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