JP5089077B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP5089077B2
JP5089077B2 JP2006124772A JP2006124772A JP5089077B2 JP 5089077 B2 JP5089077 B2 JP 5089077B2 JP 2006124772 A JP2006124772 A JP 2006124772A JP 2006124772 A JP2006124772 A JP 2006124772A JP 5089077 B2 JP5089077 B2 JP 5089077B2
Authority
JP
Japan
Prior art keywords
laser beam
irradiated
laser
split
optical path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006124772A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006332637A (ja
JP2006332637A5 (enExample
Inventor
幸一郎 田中
洋正 大石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006124772A priority Critical patent/JP5089077B2/ja
Publication of JP2006332637A publication Critical patent/JP2006332637A/ja
Publication of JP2006332637A5 publication Critical patent/JP2006332637A5/ja
Application granted granted Critical
Publication of JP5089077B2 publication Critical patent/JP5089077B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2006124772A 2005-04-28 2006-04-28 半導体装置の作製方法 Expired - Fee Related JP5089077B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006124772A JP5089077B2 (ja) 2005-04-28 2006-04-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005133731 2005-04-28
JP2005133731 2005-04-28
JP2006124772A JP5089077B2 (ja) 2005-04-28 2006-04-28 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012104458A Division JP5894002B2 (ja) 2005-04-28 2012-05-01 レーザ照射装置

Publications (3)

Publication Number Publication Date
JP2006332637A JP2006332637A (ja) 2006-12-07
JP2006332637A5 JP2006332637A5 (enExample) 2009-06-18
JP5089077B2 true JP5089077B2 (ja) 2012-12-05

Family

ID=37553949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006124772A Expired - Fee Related JP5089077B2 (ja) 2005-04-28 2006-04-28 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5089077B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100864883B1 (ko) * 2006-12-28 2008-10-22 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치.
JP4908269B2 (ja) * 2007-03-07 2012-04-04 富士フイルム株式会社 レーザ光照方法および装置
EP2504059A4 (en) * 2009-11-24 2014-01-22 Univ Columbia SYSTEMS AND METHOD FOR SEQUENTIAL SIDE FIXING WITH NONPERIODIC IMPULSES
JP5454911B2 (ja) * 2010-03-25 2014-03-26 株式会社日本製鋼所 アニール処理体の製造方法およびレーザアニール装置
WO2014136614A1 (ja) * 2013-03-05 2014-09-12 国立大学法人名古屋大学 半導体薄膜の形成方法
CN104143533B (zh) * 2014-08-07 2017-06-27 深圳市华星光电技术有限公司 高解析度amoled背板制造方法
DE102019118676B4 (de) * 2019-07-10 2021-10-21 Innovavent Gmbh Optisches System zur Homogenisierung der Intensität von Lichtstrahlung und Anlage zur Bearbeitung einer Halbleitermaterialschicht

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270510A (ja) * 2000-12-26 2002-09-20 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003109912A (ja) * 2001-10-01 2003-04-11 Matsushita Electric Ind Co Ltd レーザアニール装置
JP3563065B2 (ja) * 2002-03-28 2004-09-08 三菱電機株式会社 レーザビーム均一照射光学系
JP4503344B2 (ja) * 2003-04-21 2010-07-14 株式会社半導体エネルギー研究所 ビーム照射装置および半導体装置の作製方法

Also Published As

Publication number Publication date
JP2006332637A (ja) 2006-12-07

Similar Documents

Publication Publication Date Title
JP5894002B2 (ja) レーザ照射装置
US8395084B2 (en) Laser irradiation apparatus and laser irradiation method
US8304313B2 (en) Semiconductor device and its manufacturing method
US7585791B2 (en) Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device
US8138058B2 (en) Substrate with marker, manufacturing method thereof, laser irradiation apparatus, laser irradiation method, light exposure apparatus, and manufacturing method of semiconductor device
US7940441B2 (en) Manufacturing method of memory element, laser irradiation apparatus, and laser irradiation method
US7700463B2 (en) Method for manufacturing semiconductor device
US8212254B2 (en) Thin film transistor, manufacturing method thereof, and semiconductor device
JP4954495B2 (ja) 半導体装置の作製方法
JP5352040B2 (ja) 半導体装置の作製方法
US8173977B2 (en) Laser irradiation apparatus and laser irradiation method
JP2006332637A (ja) 半導体装置の作製方法及びレーザ照射装置
JP5388433B2 (ja) 半導体装置の作製方法
JP5153086B2 (ja) レーザ照射装置
JP5116232B2 (ja) レーザ照射装置およびレーザ照射方法
JP2006148086A (ja) レーザ照射方法、レーザ照射装置、および半導体装置の作製方法
JP4884148B2 (ja) レーザー処理装置、露光装置及び露光方法
JP5235051B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090422

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090422

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120323

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120327

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120502

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120904

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120911

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150921

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5089077

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150921

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees