JP2006332629A5 - - Google Patents

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Publication number
JP2006332629A5
JP2006332629A5 JP2006122101A JP2006122101A JP2006332629A5 JP 2006332629 A5 JP2006332629 A5 JP 2006332629A5 JP 2006122101 A JP2006122101 A JP 2006122101A JP 2006122101 A JP2006122101 A JP 2006122101A JP 2006332629 A5 JP2006332629 A5 JP 2006332629A5
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JP
Japan
Prior art keywords
conductive layer
insulator
organic compound
forming
memory element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006122101A
Other languages
English (en)
Japanese (ja)
Other versions
JP4969141B2 (ja
JP2006332629A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006122101A priority Critical patent/JP4969141B2/ja
Priority claimed from JP2006122101A external-priority patent/JP4969141B2/ja
Publication of JP2006332629A publication Critical patent/JP2006332629A/ja
Publication of JP2006332629A5 publication Critical patent/JP2006332629A5/ja
Application granted granted Critical
Publication of JP4969141B2 publication Critical patent/JP4969141B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006122101A 2005-04-27 2006-04-26 記憶素子、半導体装置、及び記憶素子の作製方法 Expired - Fee Related JP4969141B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006122101A JP4969141B2 (ja) 2005-04-27 2006-04-26 記憶素子、半導体装置、及び記憶素子の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005130632 2005-04-27
JP2005130632 2005-04-27
JP2006122101A JP4969141B2 (ja) 2005-04-27 2006-04-26 記憶素子、半導体装置、及び記憶素子の作製方法

Publications (3)

Publication Number Publication Date
JP2006332629A JP2006332629A (ja) 2006-12-07
JP2006332629A5 true JP2006332629A5 (enExample) 2009-03-26
JP4969141B2 JP4969141B2 (ja) 2012-07-04

Family

ID=37553942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006122101A Expired - Fee Related JP4969141B2 (ja) 2005-04-27 2006-04-26 記憶素子、半導体装置、及び記憶素子の作製方法

Country Status (1)

Country Link
JP (1) JP4969141B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI524347B (zh) * 2010-08-06 2016-03-01 半導體能源研究所股份有限公司 半導體裝置及其驅動方法
US8634228B2 (en) * 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
JP5929132B2 (ja) 2011-11-30 2016-06-01 株式会社リコー 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62259478A (ja) * 1986-04-14 1987-11-11 Nippon Telegr & Teleph Corp <Ntt> トンネル素子
JP2004513513A (ja) * 2000-10-31 2004-04-30 ザ　リージェンツ　オブ　ザ　ユニバーシティ　オブ　カリフォルニア 有機物双安定デバイス及び有機物メモリセル
US7274035B2 (en) * 2003-09-03 2007-09-25 The Regents Of The University Of California Memory devices based on electric field programmable films

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